Abstract: A laser scanning imaging system and method for obtaining an extended-depth-of-field image of a volume of a sample are provided. The system includes a laser module generating an input laser beam, a beam shaping module including an axicon and a Fourier-transform lens, and an imaging module including an objective lens and a detecting assembly. The axicon, Fourier-transform lens and objective lens are formed and disposed to successively convert the input laser beam into an intermediate non-diffracting beam, an intermediate annular beam, and an excitation non-diffracting beam. The excitation beam is projected onto the sample and has a depth of field and transverse resolution together defining a three-dimensional excitation region. The detecting assembly collects electromagnetic radiation from the excitation region to obtain one pixel of the extended-depth-of-field image.

Abstract: Structures and manufacturing processes of an ACF array using a non-random array of microcavities of predetermined configuration, shape and dimension. The manufacturing process includes fluidic filling of conductive particles onto a substrate or carrier web comprising a predetermined array of microcavities, or selective metallization of the array followed by filling the array with a filler material and a second selective metallization on the filled microcavity array. The thus prepared filled conductive microcavity array is then over-coated or laminated with an adhesive film. Cavities in the array, and particles filling the cavities, can have a unimodal, bimodal, or multimodal distribution.

Abstract: A pattern verification method includes preparing a desired pattern and a mask pattern forming the desired pattern on a substrate, defining at least one evaluation point on an edge of the desired pattern, defining at least one process parameter to compute the transferred/formed pattern, defining a reference value and a variable range for each of the process parameters, and computing a positional displacement for each first points corresponding to the evaluation point, first points computed using correction mask pattern and a plurality of combinations of parameter values obtained by varying the process parameters within the variable range or within the respective variable ranges. The positional displacement is a displacement between first point and the evaluation point. The method further includes computing a statistics of the positional displacements for each of the evaluation points, and outputting information modifying the mask pattern according to the statistics.

Abstract: This invention relates to an electrophoretic display or a liquid crystal display and novel processes for its manufacture. The electrophoretic display (EPD) of the present invention comprises microcups of well-defined shape, size and aspect ratio and the microcups are filled with charged pigment particles dispersed in an optically contrasting dielectric solvent. The liquid crystal display (LCD) of this invention comprises well-defined microcups filled with at least a liquid crystal composition having its ordinary refractive index matched to that of the isotropic cup material. A novel roll-to-roll process and apparatus of the invention permits the display manufacture to be carried out continuously by a synchronized photo-lithographic process.

Abstract: This invention relates to an electrophoretic display or a liquid crystal display and novel processes for its manufacture. The electrophoretic display (EPD) of the present invention comprises microcups of well-defined shape, size and aspect ratio and the microcups are filled with charged pigment particles dispersed in an optically contrasting dielectric solvent. The liquid crystal display (LCD) of this invention comprises well-defined microcups filled with at least a liquid crystal composition having its ordinary refractive index matched to that of the isotropic cup material. A novel roll-to-roll process and apparatus of the invention permits the display manufacture to be carried out continuously by a synchronized photo-lithographic process.

Abstract: An illumination optical apparatus successfully realizes mutually different illumination conditions in orthogonal two directions on an illumination objective plane. A magnification-varying optical system for similarly changing the entire size of a secondary multiple light source is arranged in an optical path between a first optical integrator for forming a first multiple light source on the basis of a light beam from a light source and a second optical integrator for forming the second multiple light source having light sources of a larger number on the basis of a light beam from the first multiple light source. The apparatus further comprises an aspect ratio-changing element for changing the aspect ratio of the incoming light beam in order to change the angle of incidence of the incoming light beam into the first optical integrator in a predetermined direction.

Abstract: A system and method for minimizing critical dimension errors on imaged wafers is described. After imaging and processing one or more wafers, the various critical dimensions are determined across the imaged exposure field and compared with the target critical dimensions to ascertain average critical dimension errors. The critical dimension error distribution across the field is modeled and the necessary exposure dose corrections are calculated to compensate the critical dimension errors. A pellicle is formed with light intensity modifying regions corresponding to the calculated local dose corrections. These regions alter the amount of light which is transmitted from a light source through a semiconductor mask onto the exposure fields of the wafers. As a consequence, the critical dimensions of the printed features are altered as well. The light intensity modifying region may be formed by depositing, such as by sputtering, particles which reflect or absorb light.

Abstract: A system and method for minimizing critical dimension errors on imaged wafers is described. After imaging and processing one or more wafers, die various critical dimensions are determined across the imaged exposure field and compared with the target critical dimensions to ascertain average critical dimension errors. The critical dimension error distribution across the field is modeled and die necessary exposure dose corrections are calculated to compensate the critical dimension errors. A pellicle is formed with light intensity modifying regions corresponding to the calculated local dose corrections. These regions alter the amount of light which is transmitted from a light source through a semiconductor mask onto the exposure fields of the wafers. As a consequence, the critical dimensions of the printed features are altered as well. The light intensity modifying region may be formed by depositing, such as by sputtering, particles which reflect or absorb light.

Abstract: Disclosed is an illumination system for use in a scanning exposure apparatus, for example, which includes a hologram, an optical system for projecting light from a light source to the hologram, a slit disposed at a predetermined position where slit-like light is formed by the hologram or at a position adjacent thereto, and an imaging optical system for illuminating a surface to be illuminated, by use of light passing through an opening of the slit.