Abstract: A composite measurement system for measuring nanometer displacement is provided. The system includes: a light source, a polarization beam splitting prism, a first phase change module, a second phase change module, a first right-angle prism, a second right-angle prism, a non-polarization beam splitting prism, a scalar interference light collection module, a vector interference light collection module and a displacement calculation module. In the present disclosure, a photodetector is configured to collect an intensity of scalar interference light of the object to be measured being moved, to obtain a periodic light intensity change curve; a CCD camera is configured to collect images of interference vortex light of the object being moved; and the displacement calculation unit is configured to calculate a displacement of the object according to integer periods of the light intensity change curve and angles of image changes of the interference vortex light.

Abstract: A detection system (200) includes an illumination system (210), a first optical system (232), a phase modulator (220), a lock-in detector (255), and a function generator (230). The illumination system is configured to transmit an illumination beam (218) along an illumination path. The first optical system is configured to transmit the illumination beam toward a diffraction target (204) on a substrate (202). The first optical system is further configured to transmit a signal beam including diffraction order sub-beams (222, 224, 226) that are diffracted by the diffraction target. The phase modulator is configured to modulate the illumination beam or the signal beam based on a reference signal. The lock-in detector is configured to collect the signal beam and to measure a characteristic of the diffraction target based on the signal beam and the reference signal. The function generator is configured to generate the reference signal for the phase modulator and the lock-in detector.

Abstract: A wafer processing apparatus includes: a laser apparatus configured to generate a laser beam; a focusing lens optical system configured to focus the laser beam on an inside of a wafer; an arbitrary wave generator configured to supply driving power to the laser apparatus; and a controller configured to control the arbitrary wave generator, wherein the laser beam includes a plurality of pulses sequentially emitted from the laser apparatus, and wherein each of the plurality of pulses is a non-Gaussian pulse, and a full width at half maximum (FWHM) of each of the plurality of pulses ranges from 1 ps to 500 ns.

Abstract: An apparatus for measuring a position of a mark on a substrate, the apparatus comprising: an illumination system configured to condition at least one radiation beam to form a plurality of illumination spots spatially distributed in series such that during scanning of the substrate the plurality of illumination spots are incident on the mark sequentially, and a projection system configured to project radiation diffracted by the mark from the substrate, the diffracted radiation being produced by diffraction of the plurality of illumination spots by the mark; wherein the projection system is further configured to modulate the diffracted radiation and project the modulated radiation onto a detecting system configured to produce signals corresponding to each of the plurality of illumination spots, the signals being combined to determine the position of the mark.

Abstract: An apparatus and system for determining alignment of a substrate in which a periodic alignment mark is illuminated with spatially coherent radiation which is then provided to a compact integrated optical device to create self images of the alignment mark which may be manipulated (e.g., mirrored, polarized) and combined to obtain information on the position of the mark and distortions within the mark. Also disclosed is a system for determining alignment of a substrate in which a periodic alignment mark is illuminated with spatially coherent radiation which is then provided to an optical fiber arrangement to obtain information such as the position of the mark and distortions within the mark.

Abstract: The purpose of the present invention is to provide a height measurement device with which, even when the height of a sample surface varies considerably, it is possible, with a relatively simple configuration, to perform height measurement with high accuracy at various heights.

Abstract: Disclosed is a method and associated apparatus for measuring a characteristic of interest relating to a structure on a substrate. The method comprises calculating a value for the characteristic of interest directly from the effect of the characteristic of interest on at least the phase of illuminating radiation when scattered by the structure, subsequent to illuminating said structure with said illuminating radiation.

Abstract: Disclosed are a laser heterodyne interferometric apparatus based on plane mirror reflection and a corresponding method. The interferometric apparatus includes a dual-frequency laser, a first photoelectric receiver, a second photoelectric receiver, a first polarizing beamsplitter, a second polarizing beamsplitter, a third polarizing beamsplitter, a quarter-wave plate, a right angle mirror, an optical compensator, and a measured plane mirror. The method performs heterodyne interferometry with two spatially separated beams of different frequencies and balances the optical path lengths of the measurement beam and the reference beam with the optical compensator. In the method, the measured plane mirror moves back and forth along the propagation direction of the input beams. The disclosure suppresses optical non-linearity and optical thermal drift in laser heterodyne interferometry, simplifies the optical path structure, and improves accuracy of laser heterodyne interferometry.

Abstract: New and useful concepts for an autofocus system and method are provided. A basic concept uses fringe projection in an autofocus system and method. A further aspect provides spatial filtering concepts for the fringe projection concept. In yet another aspect, the fringe projection autofocus system and method is provided with temporal phase shifting using no moving parts. In a still further aspect, the fringe projection autofocus system and method is provided with unambiguous height measurement concepts.

Abstract: A measurement method comprising using multiple radiation poles to illuminate a diffraction grating on a mask at a mask side of a projection system of a lithographic apparatus, coupling at least two different resulting diffraction orders per illumination pole through the projection system, using the projection system to project the diffraction orders onto a grating on a wafer such that a pair of combination diffraction orders is formed by diffraction of the diffraction orders, coupling the combination diffraction orders back through the projection system to detectors configured to measure the intensity of the combination diffraction orders, and using the measured intensity of the combination diffraction orders to measure the position of the wafer grating.

Abstract: A position detection apparatus that illuminates diffraction gratings formed on two objects with light from a light source and receives diffracted light from the diffraction gratings to acquire relative positions of the two objects includes: an optical system configured to cause plus n-th order diffracted light and minus n-th order diffracted light from each of the diffraction gratings to interfere with each other, where n is a natural number; a light receiving unit; and a processing unit, wherein the light receiving unit receives a two-beam interference light from each of the diffraction gratings, and wherein the processing unit acquires the relative positions of the two objects by using the two-beam interference light at an area where two-beam interference lights of the diffracted light from the respective diffraction gratings do not overlap each other among the two-beam interference lights of the diffracted light from each of the diffraction gratings.

Abstract: Techniques and mechanisms for evaluating misalignment of circuit structures. In an embodiment, infrared (IR) radiation is variously focused on different planes of an assembly including an integrated circuit (IC) chip and a substrate that is to be coupled to, or that is coupled to, the IC chip. The cross-sectional planes include respective structures that variously reflect IR radiation. The reflected IR radiation is measured to create images each representing a corresponding cross-section of the assembly. In another embodiment, respective reference features of the images are identified and evaluated to determine whether a misalignment between the reference features satisfies one or more threshold test conditions.

Abstract: A two-beam interference apparatus may include a wafer stage on which a wafer may be set, a beam splitter to split first laser light into second and third laser light having a beam intensity distribution elongated in a first direction within a surface of the wafer, and an optical system to guide the second and third laser light onto the wafer. The wafer is irradiated with the second laser light from a second direction perpendicular to the first direction, and the third laser light from a third direction perpendicular to the first direction but different from the second direction, to thereby cause interference of the second and third laser light on the wafer. This apparatus increases the accuracy of the two-beam interference exposure.

Abstract: The present invention employs a plurality of photomasks each having first and second apertures of which widths are set so that adjacent end regions of the adjacent first and second alignment regions overlap with each other with an overlapping dimension approximately equal to a tracking accuracy of an alignment device. The photomasks are arranged alternately in a direction intersecting the scanning direction of the substrate so that the first and the second apertures are arranged at a constant pitch. In this state, two polarized lights, that are different in at least one of polarization direction and incident angle to a substrate, are made to be incident into the first and the second apertures, respectively, to irradiate an alignment film on the substrate with the two lights that have passed through the first and the second apertures, respectively, to form the first and the second alignment regions adjacently to each other.

Abstract: A scatterometer, configured to measure a property of a substrate, includes a radiation source which produces a radiation spot on a target formed on the surface of the substrate, the size of the radiation spot being smaller than the target in one direction along the target, the position of the radiation spot being moved along the surface in a series of discrete steps. A detector detects a spectrum of the radiation beam reflected from the target and produces measurement signals representative of the spectrum corresponding to each position of the radiation spot. A processor processes the measurement signals produced by the detector corresponding to each position of the radiation spot and derives a single value for the property.

Abstract: A method for correction of the measured values of optical alignment systems with at least two measurement planes which are located in succession in the beam path. From each measurement plane, the beam path to the light source is transformed back in order to compute new incidence points using a beam which has been corrected by taking into consideration imaging errors.

Abstract: A multi-wavelength interferometer includes a beam splitter configured to split plural light fluxes into a reference beam and a measurement beam, a frequency shifter configured to shift a frequency of at least one of the reference beam and the measurement beam to make the frequencies of the reference beam and the measurement beam different from each other, an optical system configured to cause the measurement beam to be incident on a measurement surface and to cause the measurement beam reflected from the measurement surface to interfere with the reference beam to obtain interference light, a dividing unit configured to divide the interference light into a plurality of light beams, and a detection unit configured to detect the plurality of light beams divided by the dividing unit.

Abstract: A display substrate includes a signal line, a thin-film transistor (“TFT”), a key pattern, a light-blocking pattern, a color filter, a pixel electrode and an alignment key. The signal line and the key pattern are formed on a substrate. The TFT is electrically connected to the signal line. The light-blocking pattern is formed on the substrate and covers the signal line, the TFT and the key pattern. The color filter is formed in a unit pixel area of the substrate. The pixel electrode is formed on the color filter and is electrically connected to the TFT. The alignment key is formed on the light-blocking pattern, and a position of the alignment key on the substrate corresponds to a position of the key pattern on the substrate.

Abstract: A detection method and apparatus is provided. The detection apparatus includes at least two angular mounted lasers, a surface for receiving laser lines emitted by the angular mounted lasers, a camera for detecting a laser pattern formed by the laser lines on the surface, and a processor for analyzing the laser pattern. The lasers emit orthogonal laser lines on a surface of the device. The camera detects a laser pattern on the surface of the device and the processor analyzes the laser pattern to determine whether the position of the device is in pocket based on the analysis and position algorithms.

Abstract: An imprint lithography system operable for imprinting a pattern into a material deposited between an imprint mold and a substrate, the system including, inter alia, a first set of imaging units positioned at a first angle relative to normal of the substrate; and a second set of imaging units positioned at a second angle relative to normal of the substrate, wherein the first and second angles are not equal to each other.

Abstract: Provided is a semiconductor apparatus. The semiconductor apparatus includes a reference grating and a plurality of detectors. The reference grating diffracts an optical signal generated by being reflected from the alignment grating of a substrate to diffraction beams with different orders. The plurality of detectors measure intensities of a plurality of diffraction beams selected from the diffraction beams, respectively.

Abstract: Systems and methods of aligning a lithographic mask are described. In one aspect, a substrate and a lithographic mask are aligned based at least in part on a motive force between a substrate alignment mark on the substrate and a mask alignment mark on the lithographic mask that induces movement of at least one of the substrate and the lithographic mask into mutual alignment.

Abstract: An optical apparatus includes a first element, a second element, a support which supports the first element, a first measuring device which measures the position of the first element relative to the support, a second measuring device which measures the position of the second element relative to the support, a third measuring device which measures any deformation of the support, and a controller. The controller controls the relative position between the first element and the second element on the basis of the measurement results obtained by the first measuring device, the second measuring device, and the third measuring device.

Abstract: A method of measuring a position error of a beam of an exposure apparatus and an exposure apparatus using the same are provided. An exposure apparatus using a digital micromirror device (DMD) element instead of a mask measures a radiation amount of a beam that passes through each pinhole using a mask including a pinhole, and when the radiation amount is less than a reference value, it is determined that an exposure beam has a position error. By using the exposure apparatus and a method of measuring a position error of a beam, a measurement time period is reduced, and a position error of a beam is simply and accurately determined.

Abstract: A device for aligning a substrate and a mask, and a method using the same, where the device includes aligning marks in unused portions of the substrate and the mask, a sensing unit for determining overlap of the aligning marks when the substrate is aligned with the mask, and a control unit for controlling an aligning process to be repeated on the basis of data sensed and determined by the sensing unit. The sensing unit may include a camera positioned in photographic range to determine any alignment error in the alignment marks. According to another embodiment of the present invention, the alignment error between the substrate and the mask is sensed to determine whether it is acceptable or not. When the alignment error is unacceptable, the operations for aligning the substrate with the mask are repeated until the alignment error is acceptable.

Abstract: A method for aligning a substrate in a lithographic apparatus, the method including irradiating a first target portion of the substrate with a first patterned beam to form a first pattern on the substrate. Then, a second target portion of the substrate is irradiated with a second pattern beam to form a second pattern on the substrate. The second target portion at least partly overlaps the first target portion. A diffraction beam is detected during irradiation of the second pattern, due to a diffraction of the second patterned beam on the first pattern. The diffraction beam is compared with a desired diffraction beam, and the substrate is aligned based on a comparison between the detected diffraction beam and the desired diffraction beam.

Abstract: A method and device realize shallow gratings-based planar beam splitter/combiner. Non-trivial phase shifts between different ports of resulting interferometers are used to acquire full-field phase measurements. The non-trivial phase shifts between different ports of the planar beam splitter/combiner can be adjusted by simply shearing one grating with respect to the second grating. The two shallow diffraction gratings are harmonically-related and can be recorded on a single substrate for compact interferometric based schemes. During the recording process, the two gratings are aligned such that the grating planes and the grating vectors are parallel to that of each other. The relative phase of the recording beams controls the shearing between the recorded harmonically-related shallow phase gratings. The relative shearing of the two gratings defines the non-trivial phase shift between different ports of the compact planar beam splitter/combiner.

Abstract: A polarization control system includes a beam source that generates a first beam component containing light with a first polarization and a first frequency and a second beam component containing light with a second polarization and a second frequency. A polarization state modulator adjusts the polarizations of the components for transmission on a single optical fiber. A detector system measures polarizations of the components when output from the optical fiber and determines how to adjust the polarization state modulator in order to give the first and the second components the desired output polarization states. The beam source can be implemented using a Zeeman-split laser, a laser containing a birefringent element, a pair of phase-locked lasers, and/or a variety of configurations of electro-optic or acousto-optic crystals operated to create or enhance the frequency difference between the beam components.

Abstract: Spatial filtering of beams in interferometry systems is used to reduce a displacement of the beams from an optical path corresponding to the path of the beams in an optimally-aligned system. By reducing beam displacement from the optical path, the system reduces the magnitude of beam shears and associated non-cyclic errors in linear and angular displacements measured by the interferometry systems.

Abstract: A design system of an alignment mark for manufacturing a semiconductor device includes a memory which stores at least mark data including pattern information regarding plural kinds of marks and process data including condition information of manufacturing processes, and a first process simulator which simulates a substrate structure before patterning based on the process data, the substrate structure being formed in an identified manufacturing process.

Abstract: An exposure apparatus for transferring a pattern of a first object onto a second object. The apparatus includes a holding member for holding the first object. The first object is positioned on the holding member and then is held thereon, and the first object as held by the holding member is then aligned with respect to the second object. A detecting device, provided on the holding member, directly detects in real time a relative positional deviation between the first object and the holding member. The detecting device detects the relative positional deviation after the first object is held by the holding member and before the holding member releases the holding of the first object.

Abstract: An alignment system uses a self-referencing interferometer that produces two overlapping and relatively rotated images of an alignment markers. Detectors detect intensities in a pupil plane where Fourier transforms of the images are caused to interfere. The positional information is derived from the phase difference between diffraction orders of the two images which manifests as intensity variations in the interfered orders. Asymmetry can also be measured by measuring intensities at two positions either side of a diffraction order.

Abstract: A wafer alignment sensor uses a microlens array for sensing the position of an alignment pattern on a semiconductor wafer. Phase interactions between adjacent microlenses are suppressed—or alternatively, enhanced—by inducing a &pgr;/2 optical phase shift on alternate microlenses and by optimizing the optical transmittance profile of the alignment system's projection aperture.

Abstract: The exposure apparatus is provided in its main body portion with laser diodes each having different wave-lengths, for illuminating light for alignment onto a mark of a grating form arranged on each of a reticle and a wafer. The main body portion of the exposure apparatus has photomultipliers for receiving the diffraction light returned from each of the reticle mark and the wafer mark. The alignment of the reticle mark with the wafer mark is implemented by comparing phase differences of optical beat signals converted photoelectrically by the photomultipliers and by means of a phase detection comparison system. The light fluxes are transmitted between photomultipliers the laser diodes and the alignment optical system disposed in the main body portion thereof through optical fibers. This arrangement enables the position transducer to reduce an influence of generated heat upon the position detection of the wafer as well as the exposure apparatus, even if a photodetector having a large calorific power is employed.

Abstract: A scanning microscope allowing fluorescence observation and morphological observation to be simultaneously performed on the same region of interest and permitting both a fluorescence observation image and a morphological observation image to be obtained within a reduced period of time. The scanning microscope includes a device for splitting low-coherence light from a low-coherence light source between a first optical path and a second optical path. A frequency modulator is placed in at least one of the first and second optical paths to produce a frequency difference between light passing through the two optical paths. An objective optical system is placed in the first optical path to apply light to a sample and to collect light from the sample. A scanning device is placed in the first optical path to scan the sample and the light applied by the objective optical system relative to each other in a plane perpendicular to the optical axis. A combining device combines together the first and second optical paths.