Abstract: To measure a hollow three-dimensional object without contact, this object being translucent or transparent vis-á-vis a visible light, an image of the object is acquired by single-view backlit shadowgraphy, along a viewing axis, by observing this object with visible light, this image comprising at least one luminous line, an equation is established that connects at least one optogeometric parameter of the object to at least one geometric parameter of the luminous line, this geometric parameter is determined, and the optogeometric parameter is determined by means of the equation and the geometric parameter thus determined.

Abstract: A method of measuring topology of functional liquid in a pixel, in which thickness or volume of the functional liquid in the pixel is measured by a surface topology measuring apparatus comprising: measuring surface topologies in which surface topology of the functional liquid in the pixel and surface topology of the bank are measured by the surface topology measuring apparatus, and measurement parameters regarding the surface topologies are generated; adding a bank height in which a height parameter of a height of the bank is added to the measurement parameter of a surface of the functional liquid in the pixel of the measurement parameter generated; and calculating topology in which the thickness or the volume of the functional liquid in the pixel is calculated based on the added measurement parameter of the surface of the functional liquid in the pixel and the measurement parameter of the surface of the bank.

Abstract: The invention relates to a method for determining the thickness of multi-layer films (13) comprising layers consisting of various non-conductive materials. According to said method, the thickness of the multi-layer film (13) is measured by a first sensor (17) and a second sensor (16) and optionally additional sensors, whereby all the sensors take a measurement at the same location under the same conditions if possible. The first sensor (17) and the second (16) or additional sensors generate different measured values for layers of the multi-layer film (13) of the same thickness consisting of the same material (13). The measured signals of the sensors (16, 17) are fed to a computer (18), which determines the total thickness of the multi-layer film (13) and/or the thickness of the individual layers of the multi-layer film (13) from the different measured values of the first sensor (17) and the second (16) or additional sensors.

Abstract: A method for optically testing semiconductor devices or wafers using a holographic optical interference system with an infrared or thermal light source providing a light beam of coherent wavelength with a wavelength to which the semiconductor material is transparent, splitting the light beam into a reference beam and an object beam, imposing the object beam on the semiconductor material to generate a reflected object beam reflected from interior structures of the semiconductor material, adjusting the angle of the reference beam relative to the object beam between a plurality of angles with the semiconductor material being a different state for each angle of the reference beam, imposing the reflected object beam and the reference beam onto a detection device to create a plurality of interference patterns, one for each of the reference beam angles, and comparing the interference patterns to one another to determine and display characteristics within the semiconductor material.

Abstract: An endpoint detection system for detecting an endpoint of a process comprises a polychromatic light source which emits polychromatic light. The light is reflected from a substrate. A light wavelength selector receives the reflected polychromatic light and determines a wavelength of light at which a local intensity of the reflected light is maximized during the process. In one version, the wavelength selector comprises a diffraction grating to generate a plurality of light beams having different wavelengths from the reflected polychromatic light and a light detector to receive the light beams having different wavelengths and generate an intensity signal trace of the intensity of each wavelength of the polychromatic reflected light.

Abstract: An active sensor 10 is positioned on an outside of a pipe 60 so as to detect a thickness of the pipe. The active sensor comprises: an oscillator 15 capable of inputting oscillatory waves into the pipe and sweeping a frequency of the oscillatory waves within a desired range; and an optical fiber sensor mounted on the pipe, the optical fiber sensor detecting the oscillatory waves generated in the pipe.

Abstract: In a trench shape measuring apparatus, a substrate having a trench pattern extending in a predetermined trench direction on a measurement area is held by a holding part. A light emission part applies illumination light to the measurement area and reflected light of the illumination light from the measurement area is spectrally dispersed by a diffraction grating of a spectroscope, to acquire a measured spectral reflectance. Since the diffraction grating is arranged so that an angle formed between a direction on the substrate corresponding to a grating direction of the diffraction grating and the trench direction becomes 45 degrees, even if an oscillation direction of the reflected light from the substrate is limited by influence of the trench pattern, it is possible to accurately obtain a spectral reflectance of the measurement area without influence of polarization of the reflected light and obtain a depth of the trench pattern with accuracy.

Abstract: A microscopy system and method allow observing a fluorescent substance accumulated in a tissue. The tissue can be observed at a same time both with visible light and with fluorescent light. It is possible to observe a series of previously recorded fluorescent light images in superposition with the visible light images. An end of the series of images may be automatically determined. A thermal protective filter may be inserted into a beam path of an illuminating system at such automatically determined end of the series. Further, the fluorescent light image may be analyzed for identifying a coherent fluorescent portion thereof. A representation of a periphery line of the coherent portion may be generated, and depths profile data may be obtained only from the coherent portion. An illuminating light beam for exciting the fluorescence may be modulated for improving a contrast of fluorescent images.

Abstract: In one embodiment, an interferometer system comprises an unequal path interferometer assemble comprising; a first reference flat having a first length L1 in a first dimension, a second reference flat having a second length L2 in the first dimension, a cavity D1 defined by a distance between the first reference flat and the second reference flat, and a receptacle to receive an object in the cavity such that an optical path remains open between the first reference flat and the second reference flat, and a radiation targeting assembly to direct a collimated radiation beam to the interferometer assembly, a radiation collecting assembly to collect radiation received from the interferometer assembly, and a controller comprising logic to; vary a wavelength of the collimated radiation beam, record interferograms formed by a plurality of surfaces, extract phases of each of the interferograms for each of the plurality of surfaces to produce multiple phase maps, and determine each phase map from its corresponding interf

Abstract: In determining an endpoint of etching a substrate, light that is directed toward the substrate is reflected from the substrate. A wavelength of the light is selected to locally maximize the intensity of the reflected light at an initial time point of the etching process. The reflected light is detected to determine an endpoint of the substrate etching process.

Abstract: Disclosed is a method involving repeatedly measuring a pressure within a flow of processing gas that is provided in a semiconductor processing apparatus for treatment of a semiconductor substrate, such as a semiconductor wafer. The flow of processing gas is made to extend between a surface of the substrate and a surface of a processing body. From the pressure measurements the occurrence of an event that is related to a variation in the position of the substrate's surface relative to the surface of the processing body is determined.

Abstract: Methods and apparatus to perform wavefront analysis, including phase and amplitude information, and 3D measurements in optical systems, and in particular those based on analyzing the output of an intermediate plane, such as an image plane, of an optical system. Measurement of surface topography in the presence of thin film coatings, or of the individual layers of a multilayered structure is described. Multi-wavelength analysis in combination with phase and amplitude mapping is utilized. Methods of improving phase and surface topography measurements by wavefront propagation and refocusing, using virtual wavefront propagation based on solutions of Maxwell's equations are described. Reduction of coherence noise in optical imaging systems is achieved by such phase manipulation methods, or by methods utilizing a combination of wideband and coherent sources.

Abstract: Light from a light source (4) is directed along a sample path (SP) towards a region of a sample surface (7) and along a reference path (RP) towards a reference surface (6) such that light reflected by the region of the sample surface and light reflected by the reference surface interfere. A mover (11) effects relative movement along a scan path between the sample surface (7) and the reference surface (6). A detector (10) senses light intensity at intervals to provide a series of intensity values representing interference fringes produced by a region of a sample surface. A data processor (32) receives first intensity data comprising a first series of intensity values resulting from a measurement operation on a surface area of a substrate and second intensity data comprising at least a second series of intensity values resulting from a measurement operation on a surface area of a thin film structure.

Abstract: An interferometric measuring device for measuring layer thicknesses of partially transparent layers on substrates, especially of wear protection layers based on carbon, having a scanning device which scans these layers automatically in its depth direction, using which an interference plane is displaceable relative to the layer structure, having an interferometer part that has a white light interferometer and/or a wavelength-scanning interferometer. Also described is a corresponding evaluation method.

Abstract: Thin-film thickness and refractive index are measured using the Fourier amplitude of a broadband interferometric spectrum. Due to the smooth nature of the Fourier amplitude as a function of wavelength, as compared to the fast varying Fourier phase conventionally used to measure thickness, increased stability and repeatability of measurement are achieved. As a result, measurements of ultra-thin films with thickness below 100 nm are possible with reliable results.

Abstract: Methods and devices measure eye blinks and tear film lipid and aqueous layer thickness before and following ophthalmic formula application onto the ocular surface, especially wherein the ophthalmic formula is an artificial tear. The methods and devices are suitable for dry eye diagnosis. The methods and devices are suitable for use to evaluate ophthalmic formula effects on the tear film and to use such information to diagnose ophthalmic formula treatment of ocular disease conditions such as dry eye in the absence of contact lens wear or post-surgical eye drop treatment and diagnosis. The methods and devices are also suitable for use in the optimization of ophthalmic drug dosage forms and sustained drug release.

Abstract: An explicit relationship is developed between the ratio of average interferometric modulation produced by diamond-like carbon (DLC)-coated magnetic-head surfaces and the thickness of the DLC layer. Accordingly, the thickness of the DLC layer is calculated in various manners from modulation data acquired for the system using object surfaces of known optical parameters.

Abstract: An imaging, differential optical sectioning interference microscopy (DOSIM) system and method for measuring refractive indices and thicknesses of transparent thin-films. The refractive index and thickness are calculated from two interferometric images of the sample transparent thin-film having a vertical offset that falls within the linear region of an axial response curve of optically sectioning microscopy. Here, the images are formed by a microscope objective in the normal direction, i.e., in the direction perpendicular to the latitudinal surface of the thin-film. As a result, the lateral resolution of the transparent thin-film is estimated based on the Rayleigh criterion, 0.61?/NA.

Abstract: A wear gauge is provided for simulating the wear of a magnetic recording component at its interface with a magnetic storage medium comprising a wear gauge block having a wear surface that substantially approximates the geometrical dimensions and contour of the working surface of the magnetic recording component, wherein the wear surface has a coating of transparent material. A test method comprises mounting the wear gauge in a test fixture, positioning a tape and adjusting the over wrap angle at edges of the wear surface, choosing the desired tape tension, speed and runtime, and running the tape, preferably unidirectionally, in operational contact with the wear surface for the desired runtime. The wear surface is inspected under white light illumination to observe and record locations of interferometric color changes on the wear surface. The color changes are correlated to thickness changes of the transparent coating on the wear surface.

Abstract: A liquid sample is irradiated with excitation light and measurement light, and a measurement position at which a traveling path of the measurement light passes through an excitation section of the excitation light in the sample is changed while the sample is being irradiated with the excitation light and the measurement light. Then, the phase change of the measurement light is measured for each measurement by optical interferometry on the basis of the measurement light after the measurement light passes through the sample. The measurement position is changed by, for example, scanning the excitation light, moving the sample, moving a lens that collects the excitation light in the sample so as to change the light-collecting position (focal position) in the sample, etc.

Abstract: Method and apparatus for determining the thickness of material layers of a container-held (11) substance comprising a first material disposed in an upper layer (101) and a second material disposed in a lower layer (102), by transmitting a radio signal through the substance towards a container portion (13); receiving reflected signals from a surface (12) of the upper layer, a surface (14) of the second layer, and the container portion (13); varying the frequency of the transmitted signal to determine phase displacement between transmitted and reflected signals; determining optical distances to the surfaces and the container portion, dependent on the phase displacements; determining the thickness (L1) of one of said layers dependent on phase displacement through and index of refraction (n1) of that layer; and determining the thickness (L2) of the other layer dependent on the thickness of said one of said layers.

Abstract: An apparatus for measuring thickness is provided. A light source irradiates a front surface or a rear surface of a substrate with a light. A splitter splits the light into a reference light and a measurement light. The reference light is reflected by a reference light reflecting device. An optical path changing device changes an optical path length of light reflected from the reference light reflecting device. A light receiving device measures an interference of the reflected light from the substrate and the reference light from the reference light reflecting device. A thickness of at least one of the front surface, rear surface or inside of the substrate is measured based on a measurement of the interference.

Abstract: A fiber optic sensor includes at least two Fabry-Perot (FP cavities) defined by at least three partially reflecting surfaces which individually and together are capable of generating different interference spectra which are affected by temperature. One of the FP cavities is formed at an end of the sensor and includes a surface which is capable of supporting a thin film, the optical thickness of which is to be measured. The other FP cavity between the lead-in fiber and the first FP cavity thus does not include the film and can thus independently provide highly accurate temperature information for calibrating the optical length of the second FP cavity and compensation for temperature effects on measurement of the thin film supported thereon, preferably by subtraction of a calibrated temperature-dependent change in optical length of the second FP cavity from the measurement made.

Abstract: In an example embodiment, there is a method (600) for determining an approximately optimal resist thickness comprising providing a first substrate coated with a resist film having a first thickness using a first coat program, (605, 610). The first thickness of resist is measured (615, 620). A second substrate is provided (625) and coated with a resist film using the first coat program. The resist film on the second substrate is exposed to radiation. The reflectance spectrum near the actinic wavelength of the resist film is measured (630). As a function of the periodicity of the reflectance spectrum, an effective refractive index is determined. Based on the effective refractive index, a periodicity of a swing curve of the resist film coated on the second substrate is determined (635). The maxima and minima are determined as a function of the periodicity.

Abstract: A system and a method for thickness measurement that comprises providing a first confocal microscope, emitting a first light beam from the first confocal microscope in a first direction, focusing the first beam at a first focal plane, providing a second confocal microscope, emitting a second light beam from the second confocal microscope in a second direction substantially opposed to the first direction, focusing the second beam at a second focal plane, and adjusting the relative position of the first and second microscopes by overlapping the first and second focal planes.

Abstract: An optical interferometer (100) includes a first optical interferometer (200) disposed on a front surface side of a workpiece (W) and a second optical interferometer (300) disposed on a rear surface side of the workpiece (W). The first optical interferometer (200) and the second optical interferometer (300) each include a light emitting section (210, 310), a wire grid (220, 320) and an interference fringe sensor (230, 330). Wire alignment directions of the wire grid (220) of the first optical interferometer (200) and the wire grid (320) of the second optical interferometer (300) are orthogonal to each other. When no workpiece (W) is set, the wire grid (220) of the first optical interferometer (200) reflects light from the second optical interferometer (300) to generate object light and the wire grid (320) of the second optical interferometer (300) reflects light from the first optical interferometer (200) to generate object light.

Abstract: The invention comprises an apparatus for measuring the relative thickness of the lipid layer component of the precorneal tear film on the surface of an eye after distribution of the lipid layer subsequent to blinking is disclosed. An illuminator directs light to the lipid layer of a patient's eye. The illuminator is a broad spectrum light source covering the visible region and is a lambertion light emitter such that the light source is specularly reflected from the lipid layer and undergoes constructive and destructive interference in the lipid layer. A collector collects and focuses the specularly reflected light such that the interference patterns on the tear film lipid layer are observable. The collector also produces an output signal representative of the specularly reflected light which is suitable for further analysis, such as projection on to a high resolution video monitor or analysis by or storage in a computer.

Abstract: A method of measuring the thickness of a thin layer formed on a substrate comprises generating a measured signal spectrum by reflecting a light off of the thin layer and analyzing a resulting reflected light. The method further comprises generating a theoretical signal spectrum based on a putative thickness of the thin layer, and computing a skew signal spectrum as a difference between the measured signal spectrum and the theoretical spectrum. The method still comprises computing a reliability index by dividing a reference index by an area of the skew signal spectrum and using the reliability index to update the theoretical signal spectrum in a regression fitting process.

Abstract: An optical sensing probe includes a tube having a tip portion configured for placement in an environment in which conditions are to be sensed and an etalon having a known characteristic disposed proximate the tip portion. The tube also includes a head portion remote from the tip portion containing a light directing element for directing light beams at the etalon and receiving reflected light beams from the etalon wherein the received reflected light beams are used for determining an environmental condition proximate the tip portion. A method for measuring a thickness of the etalon may include directing a light beams at different frequencies at the etalon and receiving the light beams from the etalon. The method may also include identifying conditions of the respective light beams condition received from the etalon and then calculating a first thickness of the etalon responsive to the respective conditions and the known characteristic.

Abstract: In one embodiment, an interferometer system comprises an unequal path interferometer assemble comprising; a first reference flat having a first length L1 in a first dimension, a second reference flat having a second length L2 in the first dimension, a cavity D1 defined by a distance between the first reference flat and the second reference flat, and a receptacle to receive an object in the cavity such that an optical path remains open between the first reference flat and the second reference flat, and a radiation targeting assembly to direct a collimated radiation beam to the interferometer assembly, a radiation collecting assembly to collect radiation received from the interferometer assembly, and a controller comprising logic to; vary a wavelength of the collimated radiation beam, record interferograms formed by a plurality of surfaces, extract phases of each of the interferograms for each of the plurality of surfaces to produce multiple phase maps, and determine each phase map from its corresponding interf

Abstract: A system for inspecting specimens such as semiconductor wafers is provided. The system provides scanning of dual-sided specimens using a diffraction grating that widens and passes nth order (n>0) wave fronts to the specimen surface and a reflective surface for each channel of the light beam. Two channels and two reflective surfaces are preferably employed, and the wavefronts are combined using a second diffraction grating and passed to a camera system having a desired aspect ratio. The system preferably comprises a damping arrangement which filters unwanted acoustic and seismic vibration, including an optics arrangement which scans a first portion of the specimen and a translation or rotation arrangement for translating or rotating the specimen to a position where the optics arrangement can scan the remaining portion(s) of the specimen. The system further includes-means for stitching scans together, providing for smaller and less expensive optical elements.

Abstract: Methods and devices measure eye blinks and tear film lipid and aqueous layer thickness before and following ophthalmic formula application onto the ocular surface, especially wherein the ophthalmic formula is an artificial tear. The methods and devices are suitable for dry eye diagnosis. The methods and devices are suitable for use to evaluate ophthalmic formula effects on the tear film and to use such information to diagnose ophthalmic formula treatment of ocular disease conditions such as dry eye in the absence of contact lens wear or post-surgical eye drop treatment and diagnosis. The methods and devices are also suitable for use in the optimization of ophthalmic drug dosage forms and sustained drug release.

Abstract: A measuring apparatus including a light source that emits light with a wavelength that allows the light to be transmitted through and reflected at each measurement target, a splitter that splits the light from the light source into measurement light and reference light, a reference mirror at which the reference light from the splitter is reflected, a mechanism for driving the reference mirror to adjust the optical path length of the reference light reflected from the reference mirror and a mechanism for measuring the interference of the reference light reflected from the reference mirror as the reference light from the splitter is radiated toward the reference mirror and measurement beams reflected from a plurality of measurement targets as the measurement light from the splitter is radiated toward the measurement targets so as to be transmitted through the measurement targets.

Abstract: A gas analyzing apparatus includes a measurement chamber having a mounting member for mounting thereon a substrate on which a sample is adsorbed; a depressurizing mechanism for depressurizing the inside of the measurement chamber; and a heating unit for heating the substrate having the adsorbed sample thereon and mounted on the mounting member. The apparatus further includes: a mass spectrometer inserted in the measurement chamber, for detecting gas molecules escaping from the sample with an increasing temperature; and a temperature measuring unit for measuring a temperature of the substrate having the adsorbed sample thereon by using an interferometer which detects an optical thickness of the substrate.

Abstract: Disclosed is a system including: (i) an interferometer configured to direct test electromagnetic radiation to a test surface and reference electromagnetic radiation to a reference surface and subsequently combine the electromagnetic radiation to form an interference pattern, the electromagnetic radiation being derived from a common source; (ii) a multi-element detector; (iii) one or more optics configured to image the interference pattern onto the detector so that different elements of the detector correspond to different illumination angles of the test surface by the test electromagnetic radiation; and (iv) an electronic processor coupled to the detector, wherein the electronic processor is configured to process information measured by the detector to determine information about a test object having the test surface. The measurements made by the detector elements provide ellipsometry/reflectometry data for the test surface.

Abstract: An instrument for measuring dimensional changes in materials, such as ultra-low thermal expansion materials, contains an optically balanced measuring loop. Both an object beam and a loop beam propagate around the measuring loop. The object beam encounters both opposite side surfaces of the test object and the loop beam encounters remaining components of the measuring loop in common with the object beam. The object and loop beams can be separately compared to reference beams for producing heterodyne signal beams.

Abstract: In general, in a first aspect, the invention features apparatus that include an interferometer having a main cavity and an auxiliary reference surface, the main cavity including a primary reference surface and a test surface. The interferometer is configured to direct a primary portion of input electromagnetic radiation to the main cavity and an auxiliary portion of the input electromagnetic radiation to reflect from the auxiliary reference surface, wherein a first portion of the primary portion in the main cavity reflects from the primary reference surface and a second portion of the primary portion in the main cavity reflects from the test surface. The interferometer is further configured to direct the electromagnetic radiation reflected from the test surface, the primary reference surface, and the auxiliary reference to a multi-element detector to interfere with one another to form an interference pattern.

Abstract: A system including: a film thickness measuring apparatus for measuring a film thickness of a member to be processed, including: a differential waveform pattern data base for holding a standard pattern consisting of a time differential value of an interference light for each of multiple wavelengths with respect to a film thickness of a first member to be processed; a unit for measuring an intensity of an interference light for each of multiple wavelengths of a second member to be processed; a unit for obtaining a real pattern consisting of time differential values of measured interference light intensities; and a unit for determining a processed amount of the film by using a pattern of zero-cross points of the differential values of intensities of the received interference light for a second wavelength among the received interference lights of the multiple wavelengths.

Abstract: An apparatus (100) for measuring a thickness of a thin article according to an embodiment of the present apparatus is provided. The apparatus includes an optical fiber interferometer (101), a signal processor module (102) and a measuring module (103). The optical fiber interferometer is configured for obtaining an optical distance difference. This optical distance difference is a result of the thickness of the thin article between a first optical path in which the thin article is measured and a second optical path. The signal processor module is configured for converting an optical distance difference into a phase difference and processing the optical distance difference to obtain a linear signal. That linear signal is convertible into a thickness value of the thin article.

Abstract: A method including: imaging test light emerging from a test object over a range of angles to interfere with reference light on a detector, wherein the test and reference light are derived from a common source; for each of the angles, simultaneously varying an optical path length difference from the source to the detector between interfering portions of the test and reference light at a rate that depends on the angle at which the test light emerges from the test object; and determining an angle-dependence of an optical property of the test object based on the interference between the test and reference light as the optical path length difference is varied for each of the angles.

Abstract: Process control monitors are disclosed that are produced using at least some of the same process steps used to manufacture a MEMS device. Analysis of the process control monitors can provide information regarding properties of the MEMS device and components or sub-components in the device. This information can be used to identify errors in processing or to optimize the MEMS device. In some embodiments, analysis of the process control monitors may utilize optical measurements.

Abstract: A method for optically testing semiconductor devices or wafers using a holographic optical interference system with a light source providing a light beam of coherent wavelength with a wavelength to which the semiconductor material is transparent, splitting the light beam into a reference beam and an object beam, imposing the object beam on the semiconductor material to generate a reflected object beam reflected from interior structures of the semiconductor material, adjusting the angle of the reference beam relative to the object beam between a plurality of angles with the semiconductor material being in a different state for each angle of the reference beam, imposing the reflected object beam and the reference beam onto a detection device to create a plurality of interference patterns, one for each of the reference beam angles, and comparing the interference patterns to one another to determine characteristics within the semiconductor material.

Abstract: A method for characterizing one or more properties of a sample using acoustic waveforms is disclosed, and comprises directing a sequence of at least three optical pulses to the sample to generate an acoustic response in the sample at a frequency corresponding to the pulse sequence, varying the timing of one or more of the pulses in the sequence to vary the frequency of the acoustic response in the sample, and measuring the strength of the acoustic response as a function of the varied frequency to determine information about the sample.

Abstract: In the apparatus according to the present invention, light from a light source is split into measurement light and reference light, the optical path length of the reference light is altered and a plurality of measurement light interference waveforms resulting from the interference of measurement beams reflected at a measurement target and the reference light are measured. One of these interference waveforms is designated as a reference interference waveform, another interference waveform corresponding to a measurement beam reciprocally reflected at the two end surfaces of the measurement target twice more than the measurement beam corresponding to the reference interference waveform is designated as a selected interference waveform, the optical path length of the measurement light indicated by the distance between the two end surfaces of the measurement target is measured based upon these interference waveforms.

Abstract: An interferometric measuring device for measuring a measured object, in particular for thickness measurement of the measured object. A special-purpose objective having a mirror system is provided, which includes at least one first deflection mirror and one second deflection mirror and in which these are situated in such a way that the object beams incident on the first deflection mirror or on the second deflection mirror are directed respectively onto a first side or a second side, which is parallel thereto, of the measured object to be measured in a first beam path or a second beam path, respectively, which are antiparallel to one another. The mirror system additionally has at least one first position mirror for imaging the position of the measured object to be measured in relation to the first deflection mirror and/or the second deflection mirror.

Abstract: Process control monitors are disclosed that are produced using at least some of the same process steps used to manufacture a MEMS device. Analysis of the process control monitors can provide information regarding properties of the MEMS device and components or sub-components in the device. This information can be used to identify errors in processing or to optimize the MEMS device. In some embodiments, analysis of the process control monitors may utilize optical measurements.

Abstract: A system for forming an anodized coating on at least a portion of a substrate thereby creating an anodized substrate is disclosed. The system includes a bath, a coating thickness monitor, at least one probe and at least one controller. The coating thickness monitor includes at least one radiation source directed at at least a portion of the anodized substrate; at least one probe for capturing at least a portion of the radiation reflected and refracted by the anodized coating on the anodized substrate, the captured radiation being at least a portion of the radiation directed the anodized substrate from the radiation source; and at least one detector in communication with the at least one probe, the at least one detector capable of processing the captured radiation to allow a determination of at least the thickness.

Abstract: A method for monitoring consumption of a component, including the steps of emitting a radiation beam onto a first area of the component and detecting a portion of the radiation beam that is refracted by the component. A radiation level signal is generated based at least on a strength of the detected portion of the radiation beam, and a thickness of the component is determined based on the radiation level signal. The thickness of the component is compared to a predetermined thickness value, and a status signal is generated when the comparing step determines that the thickness of the component is substantially equal to or below the predetermined thickness value. When the comparing step determines that the thickness of the component is greater than the predetermined thickness value, the component is exposed to a process that can erode at least a portion of the component.

Abstract: A phase measuring apparatus for measuring phase characteristics of a film applied onto an object to be measured includes a shearing interference system for providing incident light onto the object or light reflected on the object with shearing interference, a detector for detecting shearing interference information, and a computing unit for calculating the phase characteristics of the film based on the shearing interference information.

Abstract: A method including: imaging test light emerging from a test object over a range of angles to interfere with reference light on a detector, wherein the test and reference light are derived from a common source; for each of the angles, simultaneously varying an optical path length difference from the source to the detector between interfering portions of the test and reference light at a rate that depends on the angle at which the test light emerges from the test object; and determining an angle-dependence of an optical property of the test object based on the interference between the test and reference light as the optical path length difference is varied for each of the angles.