Abstract: A multicolor marking platform may include a marking engine with a storage device storing color standard data, a non-black color separation station, marking process stations to selectively mark a color test pattern on a target substrate, and a color control logic with color control applications to selectively control color characteristics of the marking engine by controlling the non-black color separation station or a marking process station; and a spectral sensor to detect each color test pattern on the target substrate and provide corresponding color measurement data to the color control logic. The color control logic may selectively control the non-black color separation station or a marking process station in response to the color measurement data and the corresponding color standard data in relation to the selected color control application. Various embodiments of the multicolor marking platform and a method for controlling color in same are also provided.

Abstract: The time delay (and therefore the OPD) between object and reference beams in an interferometer is manipulated by changing the spectral properties of the source. The spectral distribution is tuned to produce a modulation peak at a value of OPD equal to the optical distance between the object and reference arms of a Fizeau interferometer, thereby enabling the use of its common-axis configuration to carry out white-light measurements free of coherence noise. Unwanted interferences from other reflections in the optical path are also removed by illuminating the object with appropriate spectral characteristics. OPD scanning is implemented without mechanical means by altering the source spectrum over time so as to shift the peak location by a predetermined scanning step between acquisition frames. Finally, the spectrum is controlled on a pixel-by-pixel basis to create a virtual surface that matches the profile of a particular sample surface.

Abstract: A simultaneous phase-shifting white light scanning interferometer comprises a white light scanning interferometer, a simultaneous phase-shifting module, and a scanner. Light from a short coherence length light source may be polarized and then split, by a polarization type beam-splitter, into orthogonally polarized reference and test beams. The simultaneous phase-shifting module comprises a plurality of detectors, allows for controlled phase shifts between the reference and test beams, and creates at least three independent interferograms, each with different phase shifts between the reference and test beams. The scanner translates the simultaneous phase-shifting module with respect to an object under measurement.

Abstract: A film thickness measurement apparatus 1A includes a measurement light source 28 which supplies measurement light containing wavelength components over a predetermined band to a semiconductor film 15, a spectroscopic optical system 30 and a photodetector 31 which detect intensities of output light formed by superimposing reflected light components from an upper surface and a lower surface of the semiconductor film 15 at each time point by wavelength, and a film thickness analysis section 40 which obtains a temporal change in film thickness d of the semiconductor film 15.

Abstract: Data relating to the thickness of a thin film, for example, a thickness change is determined herein as follows. Said film is arranged onto a substrate so that said film and substrate form, in a whole, an interferometric structure. After that optical radiation is emitted towards the interferometric structure formed by the film and the substrate, and optically reflected from said interferometric structure radiation is measured. Said thin film thickness related data, for example, thickness change, is then determined by means of said optically reflected radiation, for example, of spectrum related information.

Abstract: The attenuation and other optical properties of a medium are exploited to measure a thickness of the medium between a sensor and a target surface. Disclosed herein are various mediums, arrangements of hardware, and processing techniques that can be used to capture these thickness measurements and obtain three-dimensional images of the target surface in a variety of imaging contexts. This includes general techniques for imaging interior/concave surfaces as well as exterior/convex surfaces, as well as specific adaptations of these techniques to imaging ear canals, human dentition, and so forth.

Abstract: A method of authenticating a polymer film comprises measuring the thickness of a layer therein by white light interferometry and/or measuring the birefringence of a layer therein. The method, and devices to carry out the method, may be used in security applications, for example to test for counterfeit bank notes.

Abstract: A system and method for in situ determination of a material composition of optically thin layers deposited from a vapor phase onto a substrate includes irradiating the substrate with incoherent light of at least three different wavelengths, optically detecting in a spatially resolved manner a reflection intensity of a diffuse or a direct light scattering emanating from a deposited layer outside of a total reflection, concurrently providing numerical values of the detected reflection intensity to an optical layer model based on general line transmission theory, ascertaining values for the optical layer parameters of the deposited layer from the optical layer model for the at least three different wavelengths by numerically adapting the optical layer model to a time characteristic of the detected reflection intensities, and quantitatively determining a material composition of the deposited layer from the ascertained values by comparing the ascertained values to standard values.

Abstract: A method of determining the rate of change of optical thickness of a thin-film during deposition comprising the steps of illuminating the thin-film with electromagnetic radiation having a range of wavelengths, measuring the transmission spectrum of the thin-film at least twice during the deposition process to determine the wavelength ?t or turning points in the transmission spectrum, and using the measurements to determine the rate to change of optical thickness of the thin-film as a function of time. The method further comprises the steps of predicting a time T in the growth process at which the wavelength ?t of the turning point in the transmission spectrum of the thin-film will be substantially equal to the wavelength ?d of the turning point in the transmission spectrum of thin-film at its optical design thickness, and interrupting the growth process such that growth ceases at time T.

Abstract: An apparatus includes an evaluating unit and a peak detection unit. The peak detection unit is configured to determine at least one peak parameter of a peak in a Fourier transformed reflection spectrum of infrared radiation reflected off a sample that may comprise trench structures. The evaluation unit is configured to determine from the at least one peak parameter and from a correction value containing information about an effective refractive index of the sample, a trench parameter of the trench structures.

Abstract: Non-contact apparatus and methods for evaluating at least one of the DC (or RF) dielectric constant, the hardness, and Young's Modulus of a dielectric material on a microelectronic workpiece under process and for generating a correlation factor that relates a measured IR spectrum to at least one of the dielectric constant, the hardness, and Young's Modulus of the dielectric material. A specific example of a method comprises measuring a thickness of the dielectric material on the process workpiece, irradiating the process workpiece with an IR source, and collecting and measuring an IR spectrum from the process workpiece. The measured thickness and at least a portion of the measured IR spectrum from the process workpiece are used with the correlation factor to determine at least one of the dielectric constant, the hardness, and Young's Modulus of the dielectric material. The determined value from the correlation factor is then stored and/or displayed.

Abstract: A method of monitoring, in real time, the depth to which a process sample is etched by an etching procedure involving investigating a sample substrate that has a patterned surface which, when electromagnetic radiation in an appropriate wavelength range is caused to reflect from, demonstrates lateral interference effects, such that when a frequency transform is applied to spectroscopic reflection data, three distinguishable peaks occur, at least for some range of pattern depth in the sample surface.

Abstract: A method of sensing at least one target on a receptor having a substrate and a translucent coating includes minimizing interference fringe patterns in an image of the target. The method also includes passing the image of the target through an imaging system intermediate the receptor and a detector.

Abstract: An inspecting method inspects an optical stacked structure having a reflection layer and at least one light transmitting thin film sequentially stacked on a substrate. The inspecting method irradiates inspection light on the optical stacked structure from a side provided with the light transmitting thin film, measures a light intensity of reflected light from each layer, that changes depending on a change in an optical path length to each layer, and inspects a thickness of the light transmitting thin film based on the light intensity of reflected light for a specific wavelength.

Abstract: Methods are provided for estimating a surface profile of a sample in an interferometer having a broad bandwidth light source. The interferometer detects interference pattern intensity data over a series of frames of a relative scan between the sample and a reference surface.

Abstract: In order to measure a complex dielectric constant of a thin film on a substrate, a method includes irradiating the thin film sample with light at a first incident angle so that the light undergoes multiple internal reflections within the thin film sample. The method also includes measuring light that has transmitted through or reflected on the thin film sample following the multiple internal reflections, and determining a complex dielectric constant of the thin film sample based upon a spectrum of the transmitted or reflected light that has undergone the multiple internal reflections.

Abstract: A film thickness measuring apparatus of the present invention includes: a light source that emits white light to be irradiated onto a multilayer thin film; a spectroscope that disperses reflected light obtained as a result of irradiating the white light onto the multilayer thin film in order to obtain reflectance spectrums; and a computation section, said computation section including: a setting section that sets a plurality of wavelength ranges for the reflectance spectrums; a first conversion section that obtains wavenumber range reflectance spectrums by re-sequencing, among the reflectance spectrums, reflectance spectrums in the plurality of wavelength ranges set in said setting section at equal intervals, respectively; a second conversion section that converts the wavenumber range reflectance spectrums in the plurality of wavelength ranges obtained in said first conversion section into power spectrums, respectively; and a calculation section that obtains a film thickness of the multilayer thin film based

Abstract: The invention relates to a method for determining an optical property of an optical layer, comprising detecting a transmission value or a transmission spectrum and a reflection value or a reflection spectrum of the optical layer, and determining the optical property based on the transmission value or the transmission spectrum, the reflection value or the reflection spectrum and a model of the optical layer.

Abstract: A self referencing heterodyne reflectometer is disclosed which rapidly alternates between a heterodyne reflectometry (HR) mode, in which an HR beam comprised of s- and p-polarized beam components at split angular frequencies of ? and ?+?? is employed, and a self referencing (SR) mode, in which an SR beam comprised of p-polarized beam components at split angular frequencies of ? and ?+?? is employed. Alternatively, in SR operating mode the SR beam is replaced by a p-polarized amplitude modulated (AM) beam, operating at two modulated amplitudes of ? and ?+?? at a single frequency, ??. When the two measurements are made in rapid succession, using an optical chopper switcher, temperature induced noise in the detector is be assumed to be equivalent. Film phase shift information is derived from the measured phase shift ?Ref/film, generated from the HR beam, and the reference phase shift ?Ref/Sub, generated from the SR/AM beam, which are used for calculating film thickness.

Abstract: A method for measuring a layer of a device is provided. In an embodiment, a set of baseline reflectance profiles may be generated from a corresponding set of baseline devices. Each of the baseline devices may include a layer with a known thickness. A reflectance profile may also be generated from the device, which may include a layer with an unknown thickness. The reflectance profile generated from the device may then be compared to the set of reflectance profiles generated from the set of the baseline devices to determine the thickness of the layer of the device.

Abstract: This invention provides a method and an apparatus of measuring a micro-structure, capable of evaluating a geometry of a micro-structure formed typically on the surface of a semiconductor substrate, in a non-destructive, easy, precise and quantitative manner. A reflection spectrum of a sample having a known dimension of a target micro-geometry is measured (A1), features (waveform parameters) which strongly correlate to a dimension of the measured micro-geometry are determined (A2), a relation between the dimension of the micro-geometry and the waveform parameters is found (A3), and a dimension of the micro-structure having an unknown dimension is finally determined using this relation and based on the reflection spectrum obtained therefrom (A4, A5).

Abstract: A method monitors a thickness of a subject film deposited on an underlying structure, the underlying structure contains at least one thin film formed on a substrate. The method includes determining thickness data of the underlying structure and storing the thickness data of the underlying structure in a thickness memory; measuring profile of optical spectrum of the subject film on the underlying structure; reading the thickness data of the underlying structure from the thickness memory; calculating theoretical profiles of the optical spectrum of the subject film based upon corresponding candidate film thicknesses of the subject film and the thickness data of the underlying structure; and searching a theoretical profile of the subject film, which is closest to the measured profile of optical spectrum of the subject film so as to determine a thickness of the subject film.

Abstract: Methods and systems are disclosed for analyzing a scanning interferometry signal. Steps include: providing a scanning interferometry signal produced by a scanning interferometer for a first location of a test object (e.g., a sample having a thin film); providing a model function of the scanning interferometry signal produced by the scanning interferometer, wherein the model function is parameterized by one or more parameter values; fitting the model function to the scanning interferometry signal for each of a series of shifts in scan position between the model function and the scanning interferometry signal by varying the parameter values; and determining information about the test object (e.g., a surface height or height profile, and/or a thickness or thickness profile for a thin film in the test object) at the first location based on the fitting.

Abstract: A system and method for biomolecular sensing are disclosed. The system includes a receptor for a target, a source of p-polarized light positioned to direct light toward the receptor in a manner effective to result in a condition of near perfect interference in the absence of target binding; and a detector positioned to measure any light reflected from the front and back surfaces of the coating. The receptor includes a substrate and a translucent coating on the substrate having front and back surfaces, wherein the incident angle for one of the substrate/coating interface and the medium/coating (probe) interface is greater than its Brewster angle and the incident angle for the other interface is less than its Brewster angle.

Abstract: The present invention is directed to a self referencing heterodyne reflectometer system and method for obtaining highly accurate phase shift information from heterodyned optical signals, without the availability of a reference wafer for calibrations. The self referencing heterodyne reflectometer rapidly alternates between a heterodyne reflectometry (HR) mode, in which an HR beam comprised of s- and p-polarized beam components at split angular frequencies of ? and ?+?? is employed, and a self referencing (SR) mode, in which an SR beam comprised of p-polarized beam components at split angular frequencies of ? and ?+?? is employed. When the two measurements are made in rapid succession, temperature induced noise in the detector is be assumed to be the same as for both measurements. A measured phase shift ?Ref/film is generated from the HR beam and a reference phase shift ?Ref/Sub is generated from the SR beam.

Abstract: This invention provides a method and an apparatus of measuring a micro-structure, capable of evaluating a geometry of a micro-structure formed typically on the surface of a semiconductor substrate, in a non-destructive, easy, precise and quantitative manner. A reflection spectrum of a sample having a known dimension of a target micro-geometry is measured (A1), features (waveform parameters) which strongly correlate to a dimension of the measured micro-geometry are determined (A2), a relation between the dimension of the micro-geometry and the waveform parameters is found (A3), and a dimension of the micro-structure having an unknown dimension is finally determined using this relation and based on the reflection spectrum obtained therefrom (A4, A5).

Abstract: Various embodiments include a metrology tool comprising an emitter configured to emit an incident light beam at a production substrate including an ARL, a receiver configured to receive a reflected light beam from the production substrate, a spectrometer configured to determine a digital signal representing an intensity of a wavelength within the reflected light beam, and a processor configured to determine a spectrum of the reflected light beam from the digital signal, select a suppression band based on an expected wavelength representative of a portion of the ARL, and determine a property of the ARL based on a portion of the spectrum in the selected suppression band.

Abstract: Use of spectroscopic data obtained by investigation of a witness sample having a relatively thick dielectric on a surface thereof during deposition of a thin film onto the witness sample and onto a process sample having no, or a relatively thin dielectric on its surface, in characterizing thin film deposited onto the process sample.

Abstract: A method including: providing a low coherence scanning interferometry data for at least one spatial location of a sample having multiple interfaces, wherein the data is collected using a low coherence scanning interferometer having an illumination geometry and an illumination frequency spectrum, and wherein the data comprises a low coherence scanning interferometry signal having multiple regions of fringe contrast corresponding to the multiple interfaces; and determining a distance between at least one pair of interfaces based on a distance between the corresponding regions of fringe contrast and information about the illumination geometry.

Abstract: Methods and devices measure eye blinks and tear film lipid and aqueous layer thickness before and following ophthalmic formula application onto the ocular surface, especially wherein the ophthalmic formula is an artificial tear. The methods and devices are suitable for dry eye diagnosis. The methods and devices are suitable for use to evaluate ophthalmic formula effects on the tear film and to use such information to diagnose ophthalmic formula treatment of ocular disease conditions such as dry eye in the absence of contact lens wear or post-surgical eye drop treatment and diagnosis. The methods and devices are also suitable for use in the optimization of ophthalmic drug dosage forms and sustained drug release.

Abstract: The present invention relates to an apparatus and method for a measurement of a film thickness using an improved fast Fourier transformation. The apparatus includes a light source, a light receiving unit for converging a light from the light source, a detection unit for splitting a reflection light reflected by the surface of the sample and inputted into the optical fabric through the lens, and outputted to the other side of the optical fabric based on a light intensity of each wavelength and providing a certain amount of wavelength, a conversion unit for converting a wavelength based spectrum data detected by the detection unit into an analog signal and then converting into a digital signal through a converter, a computation unit for computing the number of vibrations based on a high speed Fourier transformation, and an analyzing unit for measuring a film thickness.

Abstract: An object of the present invention is to provide a simple biochemical sensor making use of the light interference effect of an optical film which is capable of measuring binding of biochemical substances at a high throughput. In the present invention, a solution containing samples 18 is passed through the sensor having probes 17 provided on an optical film with a refractive index of not less than 1.8 and not greater than 3 on a substrate, and binding of the probes 17 and samples 18 is detected from the change of intensity of the reflected light. This makes it possible to measure binding of biochemical substances at a high throughput with high precision.

Abstract: Providing a spectrometric measuring instrument suitable for in-line measurement for example in a semiconductor manufacturing process, an FPD manufacturing process, or the like, by realizing size reduction and imparting resistance to distance fluttering, angle fluttering in a horizontal direction, and angle fluttering in a perpendicular direction. A light interference type spectral element for gradually changing a wavelength of transmitted light by means of a transmitted position is provided immediately before the photoelectric transfer part array device, and based upon a light-receiving side optical system having the function of detecting a change in state of polarization of a reflected light from a sample, and a series of light-receiving amount data obtained from each of photoelectric transfer parts of the photoelectric transfer part array device, polarized light is analyzed. By fitting of a measured waveform to a theoretical waveform, a film thickness or film quality is obtained.

Abstract: Reflectance systems and methods are described that use information of an intermediate reference signal to continuously monitor, detect and/or compensate for drift in a metrology system. The intermediate reference signal is present regardless of whether a sample is being measured. The reflectance system comprises components including a transmission element coupled to a sample area and a receiver. The transmission element is configured to route signals between components of the system. The signals include an illumination signal, and a sample signal resulting from interaction of the illumination signal with a sample when the sample is present in the sample area. The signals also include the reference signal that results from interaction of the illumination signal with one or more components of the system.

Abstract: A spectroscopy system is provided which operates in the vacuum ultraviolet spectrum. More particularly, a system utilizing reflectometry techniques in the vacuum ultraviolet spectrum is provided for use in metrology applications. To ensure accurate and repeatable measurement, the environment of the optical path is controlled to limit absorption effects of gases that may be present in the optical path. To account for absorption effects that may still occur, the length of the optical path is minimized. To further account for absorption effects, the reflectance data may be referenced to a relative standard. Referencing is particularly advantageous in the VUV reflectometer due to the low available photon flux and the sensitivity of recorded data to the composition of the gaseous medium contained with the optical path. Thus, errors that may be introduced by changes in the controlled environment may be reduced.

Abstract: There is disclosed a light device for arranging a thin film pattern sensor array where a sensor array used for inspecting a thin film pattern is made to be arranged without a separate correction pattern film in accordance with an inspection subject. In the light device for arranging the thin film pattern sensor array, a shutter controls a width of a light beam which progresses from a light emitting element array to a sensor array. A correction pattern sled is installed in any one of a fixed location of an upper part of the shutter and a surface of the shutter to be transferable.

Abstract: An apparatus for monitoring a trench profile of a substrate includes a radiation-emitting unit for irradiating the substrate with infrared radiation. The intensity and/or polarization state of the infrared radiation reflected from the substrate is measured at a multitude of measuring frequencies. An analyzing unit determines the respective reflectance and relative phase change and/or relative amplitude change in relation to the respective measuring frequency. In addition, a reflectance spectrum, a relative phase change spectrum and/or a relative amplitude change spectrum may be obtained. By performing a Fourier transformation of the respective spectrum, a secondary Fourier spectrum is obtained. The secondary Fourier spectrum plots a virtual amplitude against corresponding values of a frequency periodicity that correspond to a substrate depth. Peaks of the virtual amplitude may indicate reflective planes within the substrate at respective depths.

Abstract: A system for forming an anodized coating on at least a portion of a substrate thereby creating an anodized substrate is disclosed. The system includes a bath, a coating thickness monitor, at least one probe and at least one controller. The coating thickness monitor includes at least one radiation source directed at at least a portion of the anodized substrate; at least one probe for capturing at least a portion of the radiation reflected and refracted by the anodized coating on the anodized substrate, the captured radiation being at least a portion of the radiation directed the anodized substrate from the radiation source; and at least one detector in communication with the at least one probe, the at least one detector capable of processing the captured radiation to allow a determination of at least the thickness.

Abstract: A residue detection system collects at least one of the spectrum and image from a measurement region on a sample. Spectral analysis is performed on the collected spectrum to determine whether residue is present and if so the thickness of the residue. The spectral analysis uses a calibration metric that correlates a monitoring parameter to the thickness of the residue. The monitoring parameter is at least one of the reflectance value at one or more of the local minima and maxima in the spectrum, the shape of one or more of the local minima and maxima in the spectrum, and the difference in reflectance values between at least two of the local minima and maxima in the spectrum. In one embodiment, imaging analysis is performed on the collected image of the measurement region if no residue is detected by the spectral analysis.

Abstract: A method of sensing at least one target on a receptor having a substrate and a translucent coating includes minimizing interference fringe patterns in an image of the target. The method also includes passing the image of the target through an imaging system intermediate the receptor and a detector.

Abstract: The present invention is directed to a heterodyne reflectometer system and method for obtaining highly accurate phase shift information from heterodyned optical signals, from which extremely accurate film depths can be calculated. A linearly polarized light comprised of two linearly polarized components that are orthogonal to each other, with split optical frequencies, is directed toward a film causing one of the optical polarization components to lag behind the other due to an increase in the optical path in the film for that component. A pair of detectors receives the beam reflected from the film layer and produces a measurement signal, and the beam prior to incidence on the film layer and generates a reference signal, respectively. The measurement signal and reference signal are analyzed by a phase detector for phase shift. The detected phase shift is then fed into a thickness calculator for film thickness results.

Abstract: A safety monitoring mechanism of a wafer fabrication platform is disclosed. The mechanism comprises a vibration sensor mounted at the loading apparatus of the wafer fabrication platform for detecting vibration generated during the operation of the loading apparatus; a determination module for receiving the vibration detected by the vibration sensor and to convert the vibration into digital signals and for contrast analysis with the preset standard signal range; and an alarm apparatus which produces an alarm signal to operator when the detected digital signal by the vibration sensor exceeds the standard signal range for being abnormal after contrast analysis with that of the module.

Abstract: In an opto-acoustic measuring device for thin films and solid surfaces, the probe beam is split into a first probe beam portion and a second reference beam portion. The splitting of the probe beam is achieved using a phase mask that also splits the excitation beam. The probe beam is aligned using a retro-reflector on a motorized stage to control the beam angle. Excitation and probe/reference beams are overlapped at the sample surface. The first probe beam portion gets diffracted by material disturbances generated by excitation beams. The diffracted part of the first probe beam portion is collinear with the second reference beam portion, resulting in heterodyning. The heterodyne signal measured by the detector is analyzed in order to determine thickness and/or other properties of a thin film or solid surface. The invention improves magnitude and reproducibility of the opto-acoustic signal which results in enhanced precision of measurements.

Abstract: A method including: providing a low coherence scanning interferometry data for at least one spatial location of a sample having multiple interfaces, wherein the data is collected using a low coherence scanning interferometer having an illumination geometry and an illumination frequency spectrum, and wherein the data comprises a low coherence scanning interferometry signal having multiple regions of fringe contrast corresponding to the multiple interfaces; and determining a distance between at least one pair of interfaces based on a distance between the corresponding regions of fringe contrast and information about the illumination geometry.

Abstract: Methods and systems are disclosed for analyzing a scanning interferometry signal. A scanning interferometry signal is provided that is produced by a scanning interferometer for a first location of a test object (e.g., a sample having a thin film). A model function of the scanning interferometry signal is provided which is produced by the scanning interferometer. The model function is parametrized by one or more parameter values. The model function is fit to the scanning interferometry signal for each of a series of shifts in scan position between the model function and the scanning interferometry signal by varying the parameter values. Information is determined about the test object (e.g., a surface height or height profile, and/or a thickness or thickness profile for a thin film in the test object) at the first location based on the fitting.

Abstract: The present invention relates to a method for determining the depth of a buried structure in a semiconductor wafer. According to the invention, the layer behavior of the semiconductor wafer which is brought about by the buried structure when the semiconductor wafer is irradiated with electromagnetic radiation in the infrared range and arises as a result of the significantly longer wavelengths of the radiation used in comparison with the lateral dimensions of the buried structure is utilized to determine the depth of the buried structure by spectrometric and/or ellipsometric methods.

Abstract: A thin film thickness measurement apparatus that can measure immediately after film growth thickness of a thin film of a substrate that is grown includes a light receiving/projecting unit directing light substantially perpendicular to the substrate and receiving light reflected from the substrate, and an analyze unit analyzing thickness of a thin film of the substrate according to intensity of reflected light received by the light receiving/projecting unit.

Abstract: Method and apparatus for determining a thickness of a deposited material. Energy is passed through the deposited material, wherein some of the energy is transmitted. The transmitted energy is received, and the received energy is used to determine a thickness of the deposited material.

Abstract: A sensing system and method for biomolecular sensing. The system includes: a receptor for the at least one target, the receptor including a substrate and a transparent coating on the substrate having front and back surfaces; a light source positioned to direct at least a portion of light from the light source toward the coating on the receptor; and a detector positioned to capture the light reflected from the front and back surfaces of the coating, the detector identifying presence of at least one target based on a change in the interference pattern of captured light.

Abstract: Device and method for measuring complex reflectance using a light source for generating a light beam with known polarization state, a lens for focusing the beam onto a sample surface such that various rays within the focused beam create a spread of angles of incidence ?, a waveplate for retarding one polarization state of the beam, a polarizer for generating interference between beam polarization states, and a detector with a two dimensional array of detector elements for generating intensity signals in response to the beam, wherein each detector element corresponds to a unique angle of incidence ? and azimuthal angle ? of the reflected beam. A processor calculates magnitude and phase values for the reflected beam by using the intensity signals corresponding to at least one incident angle ? and a plurality of azimuthal angles ? within the at least one incident angle ? sufficient to enable a meaningful Fourier analysis thereof.