Abstract: An in-situ laser plasma spectroscopy (LPS) system for automated near real-time elemental depth profiling of a target including: an optical source configured to generate an optical beam, wherein the optical beam is pulsed; an optical probe system configured to deliver the optical beam from the optical source to a surface of a target to generate an ablation plasma; a time resolved spectral detection system configured to generate time resolved spectral data from emission signals from the ablation plasma; and a data acquisition and processing system configured to acquire the time resolved spectral data to determine, in combination with predetermined calibration data, an absolute elemental concentration as a function of depth in near real-time.

Abstract: A measuring device for measuring internal or external dimensions of a manufactured or machined component is provided with a laser source, a beam redirection member, and a beam receptor. The beam redirection member is adapted to be positioned within an internal bore of a subject component. The laser source directs a beam downwardly to be intercepted by the beam redirection member. The beam exits the beam redirection member at approximately 90° from its original direction to strike a target area along the internal bore of the subject component. The beam is reflected back to the beam redirection member, which directs it at an upward angle to be received by the beam receptor. The beam receptor transmits the data to a control system, which calculates the dimension of the target area. Also provided are methods for optimizing the accuracy of measurements taken by the measuring device.

Abstract: An outer and inner diameter measuring method for a transparent tube in a non-contact manner includes the steps of irradiating a light having a linear sectional shape, inclined at a pre-determined angle with respect to a plane perpendicular to a length direction of a transparent tube, to the transparent tube; obtaining a light beam pattern formed since the light having a linear sectional shape is intercepted and refracted by the tube; obtaining an inner diameter of the tube by extracting inner diameter information of the tube from the obtained light beam pattern; and obtaining an outer diameter from a light beam pattern refracted by the tube, thereby calculating the outer and inner diameters together.

Abstract: The thickness of a workpart (10) is measured to a high degree of accuracy by passing a coherent light beam (20) through an aperture (16) in the workpart (10). The aperture (16?) can alternatively be created between an edge of the workpart (10) and an external reference plate (30). The light is diffracted on the far side of the workpart (10) and its diffraction pattern captured by a CCD camera (22). The captured image is analyzed by a computer (24) which compares the captured diffraction pattern to a stored referenced value to determine whether the thickness of the workpart (10) is within an acceptable range. The method is capable of returning measurements with micron or submicron resolution, and is a robust process readily adaptable to high volume production quality control applications.

Abstract: A semiconductor device includes: a circuit board; a semiconductor chip mounted over the circuit board with a predetermined gap therebetween and electrically connected to the circuit board by a protruding electrode; a first resin material filled into the gap between the circuit board and the semiconductor chip; a second resin material that seals the semiconductor chip mounted over the circuit board; a first reflector which is formed on a surface of the circuit board on the semiconductor chip side and reflects a predetermined testing light; and a second reflector which is formed on a surface of the semiconductor chip on the circuit board side and reflects the predetermined testing light.

Abstract: The object of this invention is to provide a method for fabricating a semiconductor device in which the yield and productivity are improved. In the method for fabricating a semiconductor device according to the invention, a plasma etching system is prepared which includes a vacuum chamber 1, a susceptor 7 arranged in the vacuum chamber 1 to place a wafer 8, a gas introducing means 2 to introduce the material gas into the vacuum chamber and a high-frequency power introducing means 6. The gas introduced into the vacuum chamber by the gas introducing means 2 is converted into a plasma by the high-frequency power, and a plurality of holes are selectively formed in the oxide film 23 of a main wafer surface in a plasma atmosphere. In the hole forming step, light 15 having a continuous spectrum is irradiated on a flat portion and a hole portion of the main surface of the semiconductor wafer thereby to measure the reflectivity change in the flat portion and the hole portion.

Abstract: A device and method for checking surfaces in the interior of holes, depressions, or the like. The device and method are developed in such a manner that a multicolor light beam can be produced with a light source, wherein a light beam, due to the chromatic aberration of the imaging optics, can be focused onto several points at different distances from the imaging optics, such that the distance to the surface can be determined from the spectrum of the detected light beam.

Abstract: Provided are systems 10 and methods 100 for determining both the location and angular orientation of holes 12 with openings 14 on a surface 16 of an article 18 that are at least partially obstructed. In a method of the present invention, a scanning system 10 that includes a laser spot projector 40, a laser spot sensor 42, a memory device 48 and a processor 50 is provided. A laser beam 44 is projected onto the surface 16 of the article 18 in a region 24 containing at least one hole 12 and the spot sensor receives light reflections 46. A series of points 52 representing the scanned region is stored as a point cloud 54 in the memory device 48. The point cloud 54 is then manipulated to calculate the location and angular orientation of each hole in the region in relation to one or more pre-existing, article datums 22.

Abstract: A dimension measurement method includes irradiating a measurement mark on a sample on which a pattern to be measured is formed with light from a measurement direction, detecting reflected diffracted light from the measurement mark to measure intensity thereof, and calculating a shape parameter of the pattern on the basis of the measured intensity, the measurement mark having measurement patterns which have the same shape as at least part of the pattern and are arranged in rows and columns, the columns being composed of the measurement patterns disposed with a predeter period in the direction perpendicular to the measurement direction, wherein a relation between a wavelength of the light and the period is adjusted so that the measurement mark generates the reflected diffracted light substantially the same as reflected diffracted light which would be generated when the column is assumed to be a continuous line pattern.

Abstract: A method includes providing a polymerized optical film structure having a microstructured surface, forming a scratch having a length on the microstructured surface to form a scratched optical film, illuminating the scratched optical film to form an illuminated scratch, measuring a plurality of scratch contrast ratio values along the length of the illuminated scratch with a detector, and determining a maximum scratch contrast ratio from the plurality of scratch contrast ratio values along the length of the scratch.

Abstract: While a ball 14 is inserted into a hole WA of a workpiece W and is moved in the longitudinal direction of the hole WA while automatically centripetally moved, a change of back pressure of a gas injected into the hole WA is detected by a converter 30, and at the same time reflected light from a reflection member 18 provided on the ball 14 is received by a light receiving unit 22 and a change of peak position A of an amount of the received light is calculated, so as to calculate an inner diameter, straightness, and cylindricity of the hole WA, thus providing an inexpensive noncontact measuring apparatus 10 which measures the inner diameter, the straightness, and the cylindricity of the hole WA.

Abstract: The invention uses light to determine the distance from the tip of a probe to the internal wall of the canal, and based on the position of the probe, this information is used to generate information about the shape of the canal. Light with a first and a second wavelength range is directed onto a semi-transparent mirror surface at the distal portion of the probe. Light in the first wavelength range is reflected from the mirror surface to illuminate a circumferential area of the internal surface of the canal, and light in the second wavelength range is transmitted through the mirror surface to illuminate an area in front of the distal portion of the probe. The received light is analyzed in the first wavelength range to determine the distance from the probe to the internal surface of the canal at points of the circumference, and analyzed in the second wavelength range to determine the distance from the probe to an object in front of the probe.

Abstract: A depth measuring apparatus is disclosed that comprises a mover for moving in an optical axis direction an objective lens for condensing a parallel light beam from a light emitter onto a measurement spot of a sample and converting light from the measurement spot to a parallel light beam, image forming lens for projecting light from the measurement spot obtained via the objective lens, aperture for passing only light from the focal point position of the objective lens, a surface scattered light information acquirer for detecting, while the objective lens is being moved, the amount of light passing through the aperture and having an excitation wavelength of the test subject, a fluorescence information acquirer for detecting, while the objective lens is being moved, the amount of light passing through the aperture and having a fluorescence wavelength of the subject, and a distance information acquirer for obtaining distance information between a position of the objective lens where the detection value of surface

Abstract: The apparatus and method of the present invention provide a quick, simple and accurate manner in which to measure the dimensions or characteristics of a hole without contacting the hole. The apparatus and method of the present invention also automatically detect different materials defining the hole and, therefore, the location of the interface where the materials meet. To measure the characteristics of the hole, the apparatus and method measure the intensities of the light reflected off the hole wall. In addition, the light directed toward the hole wall by the optical fiber may be of the type, such as collimated or focused, to provide distinct reflections that are received and measured by the optical receiver to supply accurate measurements of the hole characteristics.

Abstract: Disclosed is a method that utilizes optics to measure a hole depth in a workpiece. The method involves placing a light recording apparatus and a light source apparatus proximate a hole. Light is then emitted from the light source apparatus and is directed into the hole. This illumination of the hole allows an image of the side surface of the hole that is at the greatest distance from the light recording apparatus to be recorded. Then, the apparent diameter of the image is calculated. The apparent diameter of the image, in turn, is compared to the known diameter of the hole in order to calculate the distance between a reference datum in the light recording apparatus and the far side surface of the hole. Once this distance is determined, the hole depth is calculated by accounting for the distance between the reference datum and the workpiece surface.

Abstract: A method for optically detecting a trench depth includes detecting a first maxima in an intensity of multi-wavelength light. A portion of the multi-wavelength light is reflected from a top trench surface. A second maxima in an intensity of multi-wavelength light is also detected. A portion of the multi-wavelength light is reflected from a bottom trench surface. A maxima peak separation between the first maxima and the second maxima is determined. The trench depth corresponds to the maxima peak separation.

Abstract: The invention provides a system and method for reliably and accurately measuring the gap between two materials when the depth of gap is less than the smallest distance that an optical thickness gauge (OTG) is able to measure. The invention is practiced by forming a suitable slot (or a groove, channel, hole or other suitable deformation) having a precisely known depth in at least one material. The sum of the distance of the gap and the depth of the slot is at least equal to the smallest distance that the OTG can measure. The slot is positioned over the materials and under the OTG probe head such that a cavity is formed. The depth of the cavity is measured. Since the distance of the slot is known, the depth of the gap is determined by subtracting the known depth of the slot from the measured depth of the cavity.

Abstract: A method of objectively evaluating a surface mark provides an objective test methodology for the optical quantification of surface marks. The method may include the steps of reproducibly producing a surface mark on an object and optically evaluating the surface mark. The surface mark may be reproducibly produced by loading a stylus, contacting a surface on the object with the loaded stylus and moving the object and the surface thereon relative to the loaded stylus so as to thereby produce a mark on the surface. Any surface mark is optically evaluated by optically producing images of the surface mark, electronically capturing the optically produced images and measuring selected parameters of the captured optically produced images.

Abstract: The invention concerns a method for locating foreign objects on the internal surface of ear and ear canal whereby a probe having a light emitting distal portion is inserted into the ear canal, the method further comprising the steps of directing light from the distal portion of the probe to illuminate at least one point or the internal circumferential surface of the ear and/or car canal, receiving the light reflected from the illuminated surface, and directing the received light to at least one light sensitive element to generate an output, analyzing the output with respect to spectral composition in order to identify foreign objects. The invention also relates to an apparatus for locating foreign objects on the internal surface of ear and ear canal.

Abstract: A method for measuring the spatial position and/or opening such as a bore of a work piece by means of a transmitted light process using at least one optical sensor, in a manner which has high precision and is simple. At least two parallel sections between the light cone emerging from the opening and at least two working planes are measured by optical sensors, and the axial direction of the opening is calculated using straight lines which extend between the mid-points of the curves determined thereby.

Abstract: The invention uses light to determine the distance from the tip of a probe to the internal wall of the canal, and based on the position of the probe, this information is used to generate information about the shape of the canal. Light with a first and a second wavelength range is directed onto a semi-transparent mirror surface at the distal portion of the probe. Light in the first wavelength range is reflected from the mirror surface to illuminate a circumferential area of the internal surface of the canal, and light in the second wavelength range is transmitted through the mirror surface to illuminate an area in front of the distal portion of the probe. The received light is analyzed in the first wavelength range to determine the distance from the probe to the internal surface of the canal at points of the circumference, and analyzed in the second wavelength range to determine the distance from the probe to an object in front of the probe.

Abstract: The optimized band saw feed speed system of this invention is associated with a saw mill carriage reciprocable past a band saw by a power drive motor. The feed speed control system utilizes a first laser line arranged to allow video scanning of the diameter profile of a log on the carriage for measuring the impending depth of cut by the band saw blade as the carriage moves the log through the band saw. A second laser line is arranged to show on the band saw blade for detecting the lateral deviation of the blade from its path. A video camera is arranged to cover the diameter of a log on the carriage and to view the laser line projections and control the speed of the power drive motor of the carriage, to provide optimum speed of movement of the log through the band saw.

Abstract: A method for plasma etching a shallow recess or shallow trench at a predetermined depth by illuminating a wafer with a light source and using a spectrometer to receive the light reflected from the wafer begins with a step of detecting an etch start time, either by detecting a time of plasma ignition, as extracted from reflectance data, or a time extracted from the reflectance data when a wafer reflectance signal is observed to begin to change after a residual layer is etched away prior to beginning a recess or trench etch. The next step is measuring a reflectance intensity of light reflected from the wafer. Preferably, a plasma background signal is removed from this measurement and an array detector is used wherein the wavelength is determined using the reflectance model. Next, an etch rate is determined by fitting data representing the collected reflectance signal to the wafer reflectance model as a function of time, and extracting the etch rate from the model.

Abstract: A method for measuring the depth of a subject trench includes the steps of forming on a substrate a plurality of measurement trenches having different widths aj (ai<aj+1, i=1, 2, . . . , n) and a depth equal to the depth d0 of the subject trench, irradiating the measurement trenches with a parallel ray at an incidence angle of &thgr; with respect to the substrate surface while detecting the reflected ray from the substrate, separating the measurement trenches into a first group providing dark images and a second group providing bright images, and calculating a range for the depth d0 by using a largest width ak of the measurement trenches in the first group and a smallest width ak+1 of the measurement trenches in the second group based on the following relationship: (ak/2)tan &thgr;<d0≦(ak+1/2)tan &thgr;.

Abstract: A method and an apparatus for performing process lifetime tracking of trench feature using optical analysis. A plurality of process steps is performed on a first set of semiconductor wafers. A manufacturing lifetime tracking of trench features is performed. A feedback corrective process is performed on a second set of semiconductor wafers based upon the lifetime tracking trench features. A feed-forward corrective process is performed on the first set of semiconductor wafers based upon the manufacturing lifetime tracking of trench features.

Abstract: An apparatus for measuring a depth and a gradient of a trench in a semiconductor device including: a light emitting element for making a light incident on a wafer while varying an incident angle, the wafer having a trench structure carried by a test sample carrying unit; a detect unit for detecting a light reflected from the wafer at a position symmetrical to the light emitting element on the basis of a virtual vertical line perpendicular to the wafer; a photoelectric conversion unit for converting an intensity of a light detected by the detect unit to an electric signal; an operating unit for receiving an output signal from the photoelectric conversion unit, catching a time point where the size of the received signal is increased or maintained, computing a depth of the trench by using a critical angle, that is, an incident angle where the incident light is reflected from the central portion of a lower surface of the trench, and judging the time point when the increasing output signal of the photoelectric con

Abstract: An optical method for measuring a trench depth, applicable to a substrate having a trench therein, wherein the substrate has a first surface, and the trench has a bottom surface to serve as a second surface as well as a depth. The method involves measuring a total reflectance from the substrate using different wavelengths, wherein the total reflectance is determined by a first actual reflectance from the first surface, a second actual reflectance from the second surface, and a scattering factor. The second actual reflectance is then determined from the measurement of the first actual reflectance from the first surface and the calculation result of the scattering factor. Since a trench depth is determined from the second actual reflectance, the trench depth is calculated after acquiring the second actual reflectance.