Semiconductor Patents (Class 359/344)
  • Patent number: 10228514
    Abstract: A SOI bent taper structure is used as a mode convertor. By tuning the widths of the bent taper and the bend angles, almost lossless mode conversion is realized between TE0 and TE1 in a silicon waveguide. The simulated loss is <0.05 dB across C-band. This bent taper can be combined with bi-layer TM0-TE1 rotator to reach very high efficient TM0-TE0 polarization rotator. An ultra-compact (9 ?m) bi-layer TM0-TE1 taper based on particle swarm optimization is demonstrated. The entire TM0-TE0 rotator has a loss <0.25 dB and polarization extinction ratio >25 dB, worst-case across the C-band.
    Type: Grant
    Filed: November 14, 2017
    Date of Patent: March 12, 2019
    Assignee: Elenion Technologies, LLC
    Inventor: Yangjin Ma
  • Patent number: 10222564
    Abstract: A three dimensional optical interconnect device having one input and multiple output ports mounted on the same surface of a SOI wafer is disclosed. The first Si surface has a silicon waveguide with a straight portion, a first and a second 45 degree end reflectors and multiple optical splitters arranged in a sequence along the straight portion. The second silicon surface has an insulating layer and an active optical input device (VCSEL laser) and multiple receiver ports mounted on the insulating layer. The first end reflector is aligned to the input optical device, the optical splitters and the second end reflector are sequentially aligned to the photodetectors respectively. Multiple optical paths are formed from the input optical device to each of photodetectors by a reflection from each aligned optical splitter and a reflection from the second end reflector through the silicon substrate.
    Type: Grant
    Filed: April 26, 2018
    Date of Patent: March 5, 2019
    Assignee: ADOLITE INC.
    Inventors: Abraham Jou, Paul Mao-Jen Wu
  • Patent number: 10151880
    Abstract: The present invention relates to an optical light guide element having a first end section with a light entrance area designed for facing a light source and having a second end section with a light exit area designed for facing a light target area, wherein the light exit area is defined by a second surface area on the optical light guide element which faces a light target area, and wherein the light entrance area is defined by a first surface area on the optical light guide element which faces the light source, wherein the first end section comprises a first inclined surface area which forms an acute angle with the first surface area of the light entrance area, wherein the second end section forms a second inclined surface area which encloses an acute angle with the surface area of the light exit area, characterized in that said first surface area on the optical light guide element which faces the light source comprises a first replicated polymer lens.
    Type: Grant
    Filed: September 23, 2015
    Date of Patent: December 11, 2018
    Assignee: Anteryon Wafer Optics B.V.
    Inventors: Willem Matthijs Brouwer, Edwin Maria Wolterink
  • Patent number: 10151877
    Abstract: An optical circuit module comprises a substrate with a first optical coupler connected to a first optical waveguide and a second optical coupler connected to a second optical waveguide on a substrate surface side; and a semiconductor photonic device mounted on the substrate, wherein the semiconductor photonic device has a third optical waveguide and a fourth optical waveguide extending to a first end face that faces the substrate surface, and wherein the third optical waveguide is optically connected to the first optical coupler and the fourth optical waveguide is optically connected to the second optical coupler.
    Type: Grant
    Filed: May 30, 2017
    Date of Patent: December 11, 2018
    Assignees: FUJITSU LIMITED, PHOTONICS ELECTRONICS TECHNOLOGY RESEARCH ASSOCIATION
    Inventor: Akinori Hayakawa
  • Patent number: 10116115
    Abstract: A semiconductor device includes an array of VCSEL devices with an annealed oxygen implant region (annealed at a temperature greater than 800° C.) that surrounds and extends laterally between the VCSEL devices. A common anode and a common cathode can be electrically coupled to the VCSEL devices, with the common anode overlying the annealed oxygen implant region. The annealed oxygen implant region can funnel current into active optical regions of the VCSEL devices and provide current isolation between the VCSEL devices while avoiding an isolation etch between VCSEL devices. In another embodiment, a semiconductor device includes an annealed oxygen implant region surrounding a VCSEL device. The VCSEL device(s) can be formed from a multi-junction layer structure where built-in hole charge Qp for an intermediate p-type layer relative to built-in electron charge Qn for a bottom n-type layer is configured for diode-like current-voltage characteristics of the VCSEL device(s).
    Type: Grant
    Filed: February 22, 2017
    Date of Patent: October 30, 2018
    Inventors: Geoff W. Taylor, Jianhong Cai
  • Patent number: 10109980
    Abstract: Provided is an optical semiconductor element including: a stacked structure body 20 formed of a first compound semiconductor layer 21, a third compound semiconductor layer (active layer) 23, and a second compound semiconductor layer 22. A fundamental mode waveguide region 40 with a waveguide width W1, a free propagation region 50 with a width larger than W1, and a light emitting region 60 having a tapered shape (flared shape) with a width increasing toward a light emitting end surface 25 are arranged in sequence.
    Type: Grant
    Filed: August 20, 2015
    Date of Patent: October 23, 2018
    Assignee: SONY CORPORATION
    Inventors: Rintaro Koda, Masaru Kuramoto, Shunsuke Kono, Hideki Watanabe, Hiroshi Yoshida
  • Patent number: 10107962
    Abstract: In the examples provided herein, an apparatus has a mode converter coupled to a first waveguide to convert light propagating in a first set of spatial modes along the first waveguide to a second set of spatial modes. The apparatus also has a second waveguide coupled to the mode converter, where the second set of spatial modes propagate along the second waveguide in a first direction away from the mode converter. Further, the apparatus includes a coupler to couple a portion of the light propagating in the second set of spatial modes out of the second waveguide. Additionally, the second waveguide has an end facet away from the mode converter to reduce back reflection of the light not coupled out of the second waveguide to the first waveguide.
    Type: Grant
    Filed: February 20, 2015
    Date of Patent: October 23, 2018
    Assignee: Hewlett Packard Enterprise Development LP
    Inventor: Jason Pelc
  • Patent number: 10082623
    Abstract: Provided are a practical rib type optical waveguide in which polarization dependence and wavelength dependence and the like are small and an optical multiplexer/demultiplexer using the same. An optical waveguide type optical multiplexer/demultiplexer of the present invention includes a substrate, M input optical waveguides and N output optical waveguides including a single mode rib type optical waveguide, multi-mode optical interference regions including a rib type optical waveguide, and reversible tapered regions that smoothly connect the input/output optical waveguides to the multi-mode optical interference regions and include M×N rib type optical waveguides, and both side surfaces of the multi-mode optical interference region are respectively formed in a stepped shape.
    Type: Grant
    Filed: September 15, 2015
    Date of Patent: September 25, 2018
    Assignee: NEC CORPORATION
    Inventors: Tomoaki Kato, Shigeru Nakamura
  • Patent number: 10063028
    Abstract: Unidirectionality of lasers is enhanced by forming one or more etched gaps in the laser cavity. The gaps may be provided in any segment of a laser, such as any leg of a ring laser, or in one leg of a V-shaped laser. A Brewster angle facet at the distal end of a photonic device coupled to the laser reduces back-reflection into the laser cavity. A distributed Bragg reflector is used at the output of a laser to enhance the side-mode suppression ratio of the laser.
    Type: Grant
    Filed: October 30, 2014
    Date of Patent: August 28, 2018
    Assignee: MACOM TECHNOLOGY SOLUTIONS HOLDINGS, INC.
    Inventors: Alex A Behfar, Alfred T Schremer, Jr., Cristian Stagarescu
  • Patent number: 9948056
    Abstract: Ring resonators and methods of making and using the same are disclosed. In certain embodiments, a ring resonator may include a waveguide comprising a pump bus and a signal bus disposed adjacent a ring guide, the pump bus and signal bus configured to couple electromagnetic signals to and from ring guide, wherein at least a portion of the waveguide comprises erbium-doped silica and a cladding material disposed adjacent the waveguide, wherein the cladding material exhibits an index of refraction that is lower than an index of refraction of the waveguide, wherein the ring resonator exhibits a propagation loss of less than 2 dB/m.
    Type: Grant
    Filed: January 17, 2017
    Date of Patent: April 17, 2018
    Assignee: LGS INNOVATIONS LLC
    Inventor: Inuk Kang
  • Patent number: 9948063
    Abstract: Concatenated distributed feedback lasers having novel waveguides are disclosed. The waveguides allow for coupling of the laser beam between active and passive waveguide structures and improved device design and output efficiency. Methods of making along with methods of using such devices are also disclosed.
    Type: Grant
    Filed: November 18, 2016
    Date of Patent: April 17, 2018
    Assignee: Thorlabs Quantum Electronics, Inc.
    Inventors: Catherine Genevieve Caneau, Feng Xie, Chung-En Zah
  • Patent number: 9929532
    Abstract: A broad area semiconductor laser device includes a waveguide region and a filter region. The waveguide region includes an active region into which current is injected, and a cladding region that sandwiches the active region. The active region either protrudes or is recessed with respect to the filter region, so as to promote the divergence of higher order modes in the filter region.
    Type: Grant
    Filed: June 15, 2017
    Date of Patent: March 27, 2018
    Assignee: Mitsubishi Electric Corporation
    Inventors: Kimio Shigihara, Satoshi Nishikawa
  • Patent number: 9927573
    Abstract: An SOI substrate includes a base substrate, a polycrystalline silicon layer formed on the base substrate, an insulating layer formed on the polycrystalline silicon layer, and a semiconductor layer formed on the insulating layer, and optical waveguides are formed in the semiconductor layer of the SOI substrate. Thus, by arranging the polycrystalline silicon layer under the insulating layer, the insulating layer can be made thin. Since the polycrystalline silicon layer includes a plurality of grains (a mass of grains made of a single crystal Si), even when leakage of light is generated beyond the insulating layer, reflection (diffusion) of light can be suppressed. In addition, by arranging the polycrystalline silicon layer under the insulating layer, the insulating layer can be made thin, so that distortion of a substrate can be suppressed.
    Type: Grant
    Filed: June 21, 2016
    Date of Patent: March 27, 2018
    Assignee: RENESAS ELECTRONICS CORPORATION
    Inventors: Yasutaka Nakashiba, Shinichi Watanuki
  • Patent number: 9923338
    Abstract: A DFB laser having a reduced fill factor and reduced loss. A plurality of spaced-apart contact openings are etched into a dielectric layer situated on top of a laser ridge having a DFB grating layer so that electrical contact between the metal top contact layer and the DFB gratings is made only in the etched openings, since all other areas of the top surface of the DFB-grated laser ridge are insulated from the metal contact layer by the dielectric. The size and shape of contact openings and their spacing are configured so that the ratio of the total area of the openings to the total area of the laser ridge provides a fill factor of less than 100%.
    Type: Grant
    Filed: June 3, 2016
    Date of Patent: March 20, 2018
    Assignee: The United States of America, as represented by the Secretary of the Navy
    Inventors: Jerry R. Meyer, Igor Vurgaftman, Chadwick Lawrence Canedy, William W. Bewley, Chul Soo Kim, Mijin Kim, Charles D. Merritt
  • Patent number: 9897825
    Abstract: An optical modulator includes a substrate having an electro-optic effect, an optical waveguide that is formed in the substrate, and a modulation electrode (not illustrated) for modulating a light wave that propagates through the optical waveguide. In the optical modulator, a light-receiving element is disposed on the substrate, and the light-receiving element includes a light-receiving section that receives a light wave that propagates through the optical waveguide, and the light-receiving section is located on the downstream side of a center of the light-receiving element in a light wave propagating direction.
    Type: Grant
    Filed: March 24, 2017
    Date of Patent: February 20, 2018
    Assignee: SUMITOMO OSAKA CEMENT CO., LTD.
    Inventors: Kei Katou, Norikazu Miyazaki, Ryo Shimizu
  • Patent number: 9829632
    Abstract: A bent taper is provided that includes one or more waveguide bends, at least one of which has a tapering waveguide width along at least a portion thereof. In one embodiment, the bent taper is an S-shaped bent taper that is configured as a TE0-TE1 mode convertor. Such a bent taper can be combined with a linear bi-layer taper configured as a TM0-TE1 mode converter to form a TM0-TE0 polarization rotator.
    Type: Grant
    Filed: January 6, 2016
    Date of Patent: November 28, 2017
    Assignee: Elenion Technologies, LLC
    Inventors: Yangjin Ma, Michael J. Hochberg
  • Patent number: 9711939
    Abstract: Provided herein is a semiconductor optical device, including a waveguide including lattices buried therein and having a buried hetero (BH) structure formed in an optical oscillation region in which single mode light is oscillated, a waveguide having a deep ridge structure formed in an optical modulation region, and a passive waveguide formed in a mode transition region interposed between the optical oscillation region and the optical modulation region, formed as a connecting structure of the waveguide having the BH structure extending from the optical oscillation region and the waveguide having the deep ridge structure extending from the optical modulation region, and inducing evanescent optical coupling, wherein a width of the waveguide having the BH structure in the mode transition region is smaller than a width of the waveguide having the deep ridge structure in the optical modulation region.
    Type: Grant
    Filed: August 19, 2016
    Date of Patent: July 18, 2017
    Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Dong Hun Lee, Sang Ho Park, Yong Soon Baek, Jang Uk Shin, Young Tak Han
  • Patent number: 9685978
    Abstract: Disclosed is a serializer, which includes a data signal alignment unit aligning a plurality of data signals with a predetermined phase interval, a transition detection unit detecting a transition of a logic level among the aligned data signals to generate a toggle signal at a transition of the logic level, and a toggle signal conversion unit converting the toggle signal into a serial data signal obtained by serializing the data signals.
    Type: Grant
    Filed: December 10, 2015
    Date of Patent: June 20, 2017
    Assignee: Industry-Academic Cooperation Foundation, Yonsei University
    Inventors: Woo-Young Choi, Sung-Geun Kim
  • Patent number: 9680280
    Abstract: An electronic circuit for controlling a laser system consisting of a pulse source and high power fiber amplifier is disclosed. The circuit is used to control the gain of the high power fiber amplifier system so that the amplified output pulses have predetermined pulse energy as the pulse width and repetition rate of the oscillator are varied. This includes keeping the pulse energy constant when the pulse train is turned on. The circuitry is also used to control the temperature of the high power fiber amplifier pump diode such that the wavelength of the pump diode is held at the optimum absorption wavelength of the fiber amplifier as the diode current is varied. The circuitry also provides a means of protecting the high power fiber amplifier from damage due to a loss of signal from the pulse source or from a pulse-source signal of insufficient injection energy.
    Type: Grant
    Filed: August 15, 2013
    Date of Patent: June 13, 2017
    Assignee: IMRA AMERICA, INC.
    Inventors: Salvatore F. Nati, Otho E. Ulrich, Jr., Gyu C. Cho, Wayne A. Gillis, Donald J. Harter, Mark Bendett, Ingmar Hartl
  • Patent number: 9673909
    Abstract: An optical receiver module that provides a semiconductor optical amplifier (SOA) is disclosed. The optical receiver module provides the SOA in another housing and a photodiode (PD) enclosed in another housing. The housing for the SOA and the other housing for the PD are fixed as interposing a coupling unit therebetween, which is rigidly fixed to those housings. The coupling unit has a bore that passes light output from a facet of the SOA and received by the PD. A feature of the coupling unit is that a width or diameter of the bore of the coupling unit is smaller than widths of respective housings along a direction perpendicular to the optical axis of the light.
    Type: Grant
    Filed: July 8, 2015
    Date of Patent: June 6, 2017
    Assignee: Sumitomo Electric Device Innovations, Inc.
    Inventor: Ryota Teranishi
  • Patent number: 9640950
    Abstract: An optical amplifying unit that enhances the flexibility of the installation within the system is disclosed. The optical amplifying unit includes a semiconductor optical amplifier (SOA) and a housing that encloses the SOA. The housing provides a front wall with a front window that passes an optical axis coming from the SOA. The optical amplifying unit further provides a front coupling unit directly fixed to the front wall without interposing any optical fibers. The optical coupling unit has the optical receptacle function to pluggably receive an external optical plug.
    Type: Grant
    Filed: July 8, 2015
    Date of Patent: May 2, 2017
    Assignee: Sumitomo Electric Device Innovations, Inc.
    Inventor: Ryota Teranishi
  • Patent number: 9608400
    Abstract: A laser device, includes: a laser light generating unit generates laser lights with first and second wavelengths; an amplifying unit amplifies the lights with first and second wavelengths the first and the second amplified lights; a wavelength converting unit that generates a light output, either of first converted light wavelength conversion of the first amplified light and the second amplified light, or of the first converted light and the second converted light wavelength conversion of the second amplified light; and a control unit that controls operation of the laser light generating unit, wherein: the control unit controls an output condition of the light output by adjusting a temporal overlap, of the first converted light and the second amplified light, or the first and second converted lights, through control of relative timings of the laser light with the first and second wavelengths.
    Type: Grant
    Filed: July 31, 2013
    Date of Patent: March 28, 2017
    Assignee: NIKON CORPORATION
    Inventor: Akira Tokuhisa
  • Patent number: 9590734
    Abstract: A method for data processing in an optical network component includes filtering and optically equalizing an incoming optical signal and modulating the optically equalized signal. A corresponding optical network component is also provided.
    Type: Grant
    Filed: March 4, 2009
    Date of Patent: March 7, 2017
    Assignee: Xieon Networks S.a.r.l.
    Inventors: Paulo André, Daniel Fonseca, Rui Meleiro, Paulo Miguel Monteiro, Rui Morais, Lara Pellegrino
  • Patent number: 9531150
    Abstract: A method and system for optical systems based on parity-time symmetry and its breaking, and for nonreciprocal light transmission in a parity-time symmetric micro-resonator system are provided. The system includes an optical assembly that includes a first dissipative optical system and a second optical system coupled in energy transfer communication with the first optical system. The second optical system is configured to receive a continuous flow of energy from an external source and to transfer energy to the first optical system through the couple wherein the energy transferred to the first optical system from the second optical system is approximately equal to the energy dissipated in the first optical system, where the energy transferred to the first optical system from the second optical system is selectable using at least one of an amount of couple between the first optical system and the second optical system and a gain of the second optical system.
    Type: Grant
    Filed: April 13, 2015
    Date of Patent: December 27, 2016
    Assignee: Washington University
    Inventors: Sahin Kaya Ozdemir, Bo Peng, Lan Yang
  • Patent number: 9490869
    Abstract: Aspects of the subject disclosure may include, for example, a transmission medium for propagating electromagnetic waves. The transmission medium can include a plurality of cores for selectively guiding an electromagnetic wave of a plurality of electromagnetic waves longitudinally along each core, and a shell surrounding at least a portion of each core for reducing exposure of the electromagnetic wave of each core. Other embodiments are disclosed.
    Type: Grant
    Filed: July 16, 2015
    Date of Patent: November 8, 2016
    Assignee: AT&T Intellectual Property I, L.P.
    Inventors: Paul Shala Henry, William Scott Taylor, Robert Bennett, Farhad Barzegar, Irwin Gerszberg, Donald J. Barnickel, Thomas M. Willis, III
  • Patent number: 9354366
    Abstract: Optical resonators that are enhanced with photoluminescent phosphors and are designed and configured to output light at one or more wavelengths based on input/pump light, and systems and devices made with such resonators. In some embodiments, the resonators contain multiple optical resonator cavities in combination with one or more photoluminescent phosphor layers or other structures. In other embodiments, the resonators are designed to simultaneously resonate at the input/pump and output wavelengths. The photoluminescent phosphors can be any suitable photoluminescent material, including semiconductor and other materials in quantum-confining structures, such as quantum wells and quantum dots, among others.
    Type: Grant
    Filed: March 23, 2015
    Date of Patent: May 31, 2016
    Assignee: VerLASE Technologies LLC
    Inventor: Ajaykumar R. Jain
  • Patent number: 9223184
    Abstract: An optical modulator comprises an input optical splitting unit for bifurcating input light; a final optical coupling unit for coupling optical signals in a polarization state orthogonal to each other; an intermediate optical coupling unit provided in an intermediate position between the input optical splitting unit and the final optical coupling unit; first and second optical paths for connecting the input optical splitting unit and the intermediate optical coupling unit, optical path lengths of the first and second optical paths are approximately equal; third and fourth optical paths for connecting the intermediate optical coupling unit and the final optical coupling unit, optical path lengths of third and fourth optical paths are approximately equal; and three binary phase modulation unit arranged one by one in each of the three optical paths of the first, second, third and fourth optical paths.
    Type: Grant
    Filed: December 21, 2012
    Date of Patent: December 29, 2015
    Assignee: Nippon Telegraph and Telephone Corporation
    Inventors: Hiroshi Yamazaki, Takashi Saida, Takashi Goh
  • Patent number: 9209606
    Abstract: One or more input access waveguides are connected to an optical splitter arranged to divide the light into two or more output waveguides, at least two of the splitter's output access waveguides are used to form a Mach-Zehnder interferometer modulator where at least one arm of the interferometer has a phase modulator electrode and a single electrical contact is arranged to apply a common voltage simultaneously to a selected portion in each arm, or selected portions in each arm of the waveguides that are disposed after the splitter but preceding the phase modulation electrodes, or alternatively the single electrical contact is arranged to apply the voltage to a selected portion of the input access waveguide connected to the splitter and in one or more selected portions of one or both of the arms after the splitter but preceding the phase modulation electrodes to provide gain or reduced optical loss.
    Type: Grant
    Filed: September 12, 2013
    Date of Patent: December 8, 2015
    Assignee: FINISAR SWEDEN AB
    Inventors: Dave Adams, Jan-Olof Wesstrom
  • Patent number: 9166373
    Abstract: Laser devices formed on a semipolar surface region of a gallium and nitrogen containing material are disclosed. The laser devices have a laser stripe configured to emit a laser beam having a cross-polarized emission state.
    Type: Grant
    Filed: January 23, 2015
    Date of Patent: October 20, 2015
    Assignee: SORAA LASER DIODE, INC.
    Inventors: James W. Raring, Mathew Schmidt, Bryan Ellis, Hua Huang, Melvin McLaurin, Christiane Poblenz Elsass
  • Patent number: 9160140
    Abstract: It is disclosed a method for driving a laser diode such as to enable mitigation or elimination of so called spiking effects related to the number of injected carriers in the laser overshooting the equilibrium value at the beginning of the lasing process. In this manner, among other things, the efficiency of a master oscillator power amplifier that may be utilized in range finding applications will be improved. It is further disclosed an optical pulse transmitter comprising such a laser diode.
    Type: Grant
    Filed: May 27, 2014
    Date of Patent: October 13, 2015
    Assignee: TRIMBLE AB
    Inventors: Yuri P. Gusev, Mikael Hertzman, Evgeny Vanin, Christian Grässer
  • Patent number: 9059563
    Abstract: This application provides a self-seeding fiber laser, including: an arrayed waveguide grating; a gain medium, coupled to one branch port of the arrayed waveguide grating; a Faraday rotator mirror, coupled to a common port of the arrayed waveguide grating, and configured to reflect a part of optical signals transmitted by the gain medium and form injection light returning to the gain medium; where the gain medium, the arrayed waveguide grating, and the Faraday rotator mirror form a laser resonator, and the arrayed waveguide grating is configured to perform wavelength selection in the laser resonator; and a compensation apparatus, coupled to the gain medium and configured to provide a compensation current for the gain medium selectively according to power of the injection light.
    Type: Grant
    Filed: January 24, 2014
    Date of Patent: June 16, 2015
    Assignee: HUAWEI TECHNOLOGIES CO., LTD.
    Inventors: Zhiguang Xu, Dekun Liu, Huafeng Lin
  • Patent number: 9042008
    Abstract: An optical semiconductor device includes: semiconductor lasers; a wave coupling section multiplexing light output by the semiconductor lasers; first optical waveguides respectively optically connecting respective semiconductor lasers to the wave coupling section; a phase regulator regulating phase of reflected light that is reflected at a reflecting point located in the optical semiconductor device and that returns to the semiconductor lasers; a second optical waveguide optically connecting the wave coupling section to the phase regulator; an optical amplifying section amplifying output light of the phase regulator; and a third optical waveguide optically connecting an output of the phase regulator to the optical amplifying section. The phase regulator adjusts the phase of reflected light that returns to the semiconductor lasers to decrease line width of the light output by the semiconductor lasers.
    Type: Grant
    Filed: March 14, 2014
    Date of Patent: May 26, 2015
    Assignee: MITSUBISHI ELECTRIC CORPORATION
    Inventors: Takeshi Saito, Masakazu Takabayashi, Eitaro Ishimura, Tohru Takiguchi, Kazuhisa Takagi, Keisuke Matsumoto, Yoshifumi Sasahata
  • Patent number: 9036253
    Abstract: Vertical cavity semiconductor optical amplifiers for various photonic devices including all optical logic gate devices and oscillators, where such devices can be implemented to achieve various advantages, including Boolean inversion at high speeds, low power, workable noise margins for cascadability because of input output isolation, and easy of integration in large arrays.
    Type: Grant
    Filed: October 5, 2007
    Date of Patent: May 19, 2015
    Assignee: The Regents of the University of California
    Inventors: Sadik C. Esener, Haijiang Zhang, Pengyue Wen, Matthias Gross
  • Publication number: 20150124313
    Abstract: Provided are an optical amplifier, a light reception element, and a controller configured to decrease a gain of the optical amplifier according to an optical signal power input to the optical amplifier in response to a detection of a recovery of the optical signal input to the optical amplifier from an interruption of the optical signal and to increase the gain of the optical amplifier so that an input optical power to the light reception element approaches a target value after the decreasing of the gain.
    Type: Application
    Filed: September 12, 2014
    Publication date: May 7, 2015
    Applicant: Fujitsu Optical Components Limited
    Inventor: Kensuke Takahashi
  • Patent number: 9025241
    Abstract: An optical device includes a gain medium on a substrate. The device also includes one or more laser cavities and an amplifier on the substrate. The one or more laser cavities each guides a light signal through a different region of the gain medium such that each of the light signals is amplified within the gain medium. The amplifier guides an amplified light signal through the gain medium such that the amplified light signal is amplified in the gain medium.
    Type: Grant
    Filed: October 14, 2011
    Date of Patent: May 5, 2015
    Assignee: Kotura, Inc.
    Inventors: Mehdi Asghari, Dazeng Feng
  • Publication number: 20150116816
    Abstract: A single frequency laser system is configured with an elongated housing extending along a longitudinal axis and having opposite axially spaced upstream and downstream ends. The housing encloses a laser chip configured to emit a radiation which propagates along a light path and emitted through the downstream faucet thereof. One or more spaced frequency discriminators are mounted in the housing downstream from the chip so as to define an external resonant cavity with the upstream faucet of the of the laser chip. At least two or more separate thermoelectric coolers (“TEC”) are mounted in the housing to control the chip arid discriminators so that the system emits radiation at the desired frequency.
    Type: Application
    Filed: October 31, 2013
    Publication date: April 30, 2015
    Applicant: IPG Photonics Corporation
    Inventors: Yuri Barannikov, Alexey Avdokhin
  • Patent number: 9019595
    Abstract: Optical resonators that are enhanced with photoluminescent phosphors and are designed and configured to output light at one or more wavelengths based on input/pump light, and systems and devices made with such resonators. In some embodiments, the resonators contain multiple optical resonator cavities in combination with one or more photoluminescent phosphor layers or other structures. In other embodiments, the resonators are designed to simultaneously resonate at the input/pump and output wavelengths. The photoluminescent phosphors can be any suitable photoluminescent material, including semiconductor and other materials in quantum-confining structures, such as quantum wells and quantum dots, among others.
    Type: Grant
    Filed: March 26, 2012
    Date of Patent: April 28, 2015
    Assignee: VerLASE Technologies LLC
    Inventor: Ajaykumar R. Jain
  • Patent number: 9019594
    Abstract: A control method of a semiconductor optical amplifier includes: controlling a driving current of the semiconductor optical amplifier in a region where a light output intensity decreases in accordance with increasing of the driving current, a drive current in the region being higher than a drive current in a region where a light output intensity increases in accordance with increasing of the driving current.
    Type: Grant
    Filed: December 21, 2012
    Date of Patent: April 28, 2015
    Assignee: Sumitomo Electric Device Innovations, Inc.
    Inventor: Ryota Teranishi
  • Patent number: 9019593
    Abstract: An optical amplification apparatus includes a front-stage semiconductor optical amplifier which amplifies an input light and a rear-stage semiconductor optical amplifier which amplifies an amplified light outputted from the front-stage semiconductor optical amplifier. The front-stage semiconductor optical amplifier exercises auto level control of an output light by exercising variable control of driving current which flows according to applied voltage higher than light emitting threshold voltage of an internal optical amplification element. The rear-stage semiconductor optical amplifier performs gate switching of a transmitted light by exercising switching control of driving current. By doing so, distortion of a waveform is controlled and optical communication quality can be improved.
    Type: Grant
    Filed: March 12, 2012
    Date of Patent: April 28, 2015
    Assignee: Fujitsu Limited
    Inventors: Setsuo Yoshida, Susumu Kinoshita, George Ishikawa, Goji Nakagawa, Yutaka Kai, Kyosuke Sone, Keisuke Harada
  • Patent number: 9013785
    Abstract: A widely tunable multi-mode semiconductor laser containing only two electrically active sections, being an optical gain section and a tunable distributed Bragg reflector section adapted to reflect at a plurality of wavelengths, wherein the gain section is bounded by the tunable distributed Bragg reflector section and a broadband facet reflector, and wherein the tunable distributed Bragg reflector section comprises a plurality of discrete segments capable of being selectively tuned, wherein the reflection spectra of one or more segments of the tunable distributed Bragg reflector section can be tuned lower in wavelength to reflect with the reflection spectrum of a further segment of the tunable distributed Bragg reflector section to provide a wavelength range of enhanced reflectivity. An optical transmitter comprising a light source that is such a widely tunable multi-mode semiconductor laser.
    Type: Grant
    Filed: August 24, 2012
    Date of Patent: April 21, 2015
    Assignee: Oclaro Technology Limited
    Inventors: Neil David Whitbread, Andrew Cannon Carter
  • Patent number: 9001415
    Abstract: A semiconductor optical amplifier includes a semiconductor substrate; an active layer that includes a first region and a second region formed over the semiconductor substrate; and a reflection part that is formed along the second region and includes a first portion that reflects a first wavelength light and a second portion that reflects a second wavelength light with an optical gain lower than an optical gain of the first wavelength light; wherein, the first portion is formed closer to the first region side than the second portion.
    Type: Grant
    Filed: June 28, 2010
    Date of Patent: April 7, 2015
    Assignee: Fujitsu Limited
    Inventor: Shinsuke Tanaka
  • Publication number: 20150086221
    Abstract: A transimpedance amplifier (TIA) device. The device includes a photodiode coupled to a differential TIA with a first and second TIA, which is followed by a Level Shifting/Differential Amplifier (LS/DA). The photodiode is coupled between a first and a second input terminal of the first and second TIAs, respectively. The LS/DA can be coupled to a first and second output terminal of the first and second TIAs, respectively. The TIA device includes a semiconductor substrate comprising a plurality of CMOS cells, which can be configured using 28 nm process technology to the first and second TIAs. Each of the CMOS cells can include a deep n-type well region. The second TIA can be configured using a plurality CMOS cells such that the second input terminal is operable at any positive voltage level with respect to an applied voltage to a deep n-well for each of the plurality of second CMOS cells.
    Type: Application
    Filed: July 24, 2014
    Publication date: March 26, 2015
    Inventors: Rahul SHRINGARPURE, Tom Peter Edward BROEKAERT, Gaurav MAHAJAN
  • Patent number: 8988769
    Abstract: The embodiments herein provide a device and a method for extending the bandwidth of short wavelength and long wavelength fiber optic lengths. The embodiments herein provide for an optical transmitter package device comprising: a laser diode; and a semiconductor optical amplifier connected directly after and in close proximity to the laser diode, wherein the semiconductor optical amplifier is adapted to operate in a frequency domain such that the semiconductor optical amplifier filters and reshapes optical wavelengths from the laser diode, and wherein the semiconductor optical amplifier is biased below an amplification threshold for the semiconductor optical amplifier. The device may also comprises a feedback circuit which comprises an optical splitter, wherein the feedback circuit samples reshaped optical output from the semiconductor optical amplifier and dynamically adjusts one or both of the semiconductor optical amplifier and the laser diode.
    Type: Grant
    Filed: July 20, 2011
    Date of Patent: March 24, 2015
    Assignee: International Business Machines Corporation
    Inventors: Robert G. Atkins, Harry H. Bagheri, Casimer M. DeCusatis
  • Patent number: 8988770
    Abstract: A hybrid optical source that provides an optical signal having a wavelength is described. This hybrid optical source includes an edge-coupled optical amplifier (such as a III-V semiconductor optical amplifier) aligned to a semiconductor reflector (such as an etched silicon mirror). The semiconductor reflector efficiently couples (i.e., with low optical loss) light out of the optical amplifier in a direction approximately perpendicular to a plane of the optical amplifier. A corresponding optical coupler (such as a diffraction grating or a mirror) fabricated on a silicon-on-insulator chip efficiently couples the light into a sub-micron silicon-on-insulator optical waveguide. The silicon-on-insulator optical waveguide couples the light to additional photonic elements (including a reflector) to complete the hybrid optical source.
    Type: Grant
    Filed: March 14, 2013
    Date of Patent: March 24, 2015
    Assignee: Oracle International Corporation
    Inventors: Xuezhe Zheng, Ashok V. Krishnamoorthy, Ivan Shubin, John E. Cunningham, Guoliang Li, Ying L. Luo
  • Patent number: 8970948
    Abstract: Disclosed are systems and methods for using a semiconductor optical amplifier (SOA) as an optical modulator for pulsed signals. In accordance with the principles of the invention, the SOA can be biased with a negative voltage to suppress transmission and improve modulator extinction and biased with a positive pulsed signal with sufficient amplitude to forward bias the amplifier (SOA), both transmitting the carrier and increasing its amplitude by means of a gain provided by the SOA under forward biased conditions. In addition, the forward bias voltage may be selected to compensate for losses within the SOA.
    Type: Grant
    Filed: September 11, 2013
    Date of Patent: March 3, 2015
    Assignee: Innovative Photonic Solutions, Inc.
    Inventors: John C. Connolly, Donald E Ackley, Scott L Rudder, Harald R. Guenther
  • Patent number: 8964284
    Abstract: A semiconductor optical amplifier module may include a beam splitter to split an optical signal into two polarization optical signals including a first polarization optical signal with a Transverse Magnetic (TM) polarization provided along a first path of two paths, and a second polarization optical signal with a Transverse Electric (TE) polarization provided along a second path of the two paths; a first rotator to rotate the TM polarization of the first polarization optical signal to TE polarization; a first semiconductor optical amplifier to amplify the rotated first polarization optical signal to output a first resultant optical signal; a second semiconductor optical amplifier to amplify the second polarization optical signal; and a second rotator to rotate the polarization of the amplified second polarization optical signal to output a second resultant optical signal; and a beam combiner to combine the first resultant optical signal and the second resultant optical signal.
    Type: Grant
    Filed: April 18, 2012
    Date of Patent: February 24, 2015
    Assignee: Infinera Corporation
    Inventors: Mehrdad Ziari, Scott Corzine, Masaki Kato, Michael Francis Van Leeuwen, Radhakrishnan L. Nagarajan, Matthew L. Mitchell, Fred A. Kish, Jr.
  • Publication number: 20150043056
    Abstract: A method of generating light is disclosed. The method comprises: directing an optical pulse to a semiconductor optical amplifier being at a temperature above 0° C. The optical pulse is preferably characterized by a wavelength within an emission spectrum of the semiconductor optical amplifier and by a pulse area selected to induce Rabi oscillations in the semiconductor optical amplifier, and to emit light at a frequency of at least 1 THz.
    Type: Application
    Filed: August 7, 2014
    Publication date: February 12, 2015
    Inventors: Amir CAPUA, Gadi Eisenstein
  • Patent number: 8947770
    Abstract: An apparatus for monitoring optical equipment in an optical circuit is disclosed in which the apparatus may include an optical device situated to receive an optical input signal and to reflect a portion of the energy of the received optical input signal, thereby providing a reflected input signal; a first photodiode located along a path of the reflected input signal, and operable to receive optical energy from the reflected optical input signal and from ambient optical power; a second photodiode located substantially outside the reflection path of the optical input signal; and means for calculating a magnitude of a power level of the optical input signal from values of outputs from the first and second photodiodes.
    Type: Grant
    Filed: August 15, 2011
    Date of Patent: February 3, 2015
    Assignee: Aeon Corporation
    Inventor: Hongsheng Wang
  • Patent number: 8948605
    Abstract: The present document relates to passive optical networks (PON). More particularly but not exclusively, it relates to the use of a reflective semiconductor optical amplifier (RSOA) for amplifying signals in a Gigabit PON (GPON) or WDM-PON. An apparatus configured to amplify light at different wavelengths in an optical network is described. The apparatus comprises a first active material configured to amplify light at a first wavelength and a second active material configured to amplify light at a second wavelength. Furthermore, the apparatus comprises a first reflector which separates the first and second active materials and which is configured to reflect light at the first wavelength and which is configured to be substantially transparent to light at the second wavelength. In addition, the apparatus comprises a second reflector adjacent the second active material opposite to the first reflector which is configured to reflect light at the second wavelength.
    Type: Grant
    Filed: June 16, 2011
    Date of Patent: February 3, 2015
    Assignee: Alcatel Lucent
    Inventors: Romain Brenot, Francis Poingt
  • Patent number: 8937976
    Abstract: A system for generating a shaped optical pulse is disclosed. The system includes a master oscillator for generating an initial optical pulse, which is then directed to a semiconductor optical amplifier to amplify a portion of the initial optical pulse. The amplified pulse is reflected from a fiber Bragg grating to spectrally clean the amplified pulse and the reflected portion is returned back through the semiconductor optical amplifier. The semiconductor optical amplifier is activated a second time to amplify the reflected portion of the pulse. The time delay between the two activations of the semiconductor optical amplifier is selected to generate an output pulse with desired duration and/or amplitude profile over time.
    Type: Grant
    Filed: August 15, 2012
    Date of Patent: January 20, 2015
    Assignee: Northrop Grumman Systems Corp.
    Inventors: Timothy McComb, Fabio Di Teodoro