Abstract: A gain-clamped semiconductor optical amplifier according to the present invention has a pair of DBR areas 2, 3 disposed in sandwiching relation to gain area 1 for amplifying guided light. A portion of a waveguide of gain area 1 comprises MMI waveguide 11.

Abstract: Embodiments of the disclosed technique disclose an optical device generating light by luminescence comprising a substrate, a waveguide, a pump light source and a photoluminescent layer, wherein the waveguide is positioned between the substrate and the photoluminescent layer, or the photoluminescent layer is positioned between the substrate and the waveguide. The pump light source is provided opposite to the photoluminescent layer at the backside of the substrate. The pump light source is adapted to pump the photoluminescent layer to emit light; and at least some of the emitted light is evanescently coupled into the waveguide.

Abstract: An optical amplifier includes multiple semiconductor optical amplifiers (SOAs) provided on a semiconductor substrate and having different wavelength bands to be amplified; multiple branching paths that branch an input optical signal and input the branched optical signals into the parallel SOAs, respectively; and multiple combining paths that combine and output the optical signals after amplification by the SOAs.

Abstract: An interband cascade gain medium is provided. The gain medium can include at least one thick separate confinement layer comprising Ga(InAlAs)Sb between the active gain region and the cladding and can further include an electron injector region having a reduced thickness, a hole injector region comprising two hole quantum wells having a total thickness greater than about 100 ?, an active gain quantum well region separated from the adjacent hole injector region by an electron barrier having a thickness sufficient to lower a square of a wavefunction overlap between a zone-center active electron quantum well and injector hole states, and a thick AlSb barrier separating the electron and hole injectors of at least one stage of the active region.

Abstract: A solid-state laser amplifier may include a first amplifying module including a first optical system having two focusing optical systems disposed so that the focal points of the two focusing optical systems essentially match at a first position, and a first solid-state laser element, disposed so that a surface into which laser light enters is tilted at essentially a Brewster's angle relative to an optical path of the laser light and a second amplifying module including a second optical system having two focusing optical systems disposed so that the focal points of the two focusing optical systems essentially match at a second position, and a second solid-state laser element, disposed so that a surface into which laser light that has passed through the first amplifying module enters is tilted at essentially a Brewster's angle relative to an optical path of the laser light.

Abstract: An optical amplifier includes a semiconductor optical amplifier which has a gain that changes in accordance with a wavelength of input light and which generates a noise light power having different levels in accordance with a drive current, a detector that detects an optical power branched from output light of the semiconductor optical amplifier, and a controller that controls supply of the drive current based on the optical power such that an output light power of the semiconductor amplifier is a sum of a target signal light power and the noise light power.

Abstract: A semiconductor optical amplifier includes a semiconductor substrate; an optical waveguide that includes an active layer formed on the semiconductor substrate; and a wavelength selective reflection film that is formed on an end face where signal light is incident on the optical waveguide the wavelength selective reflection film allows transmission of the signal light, and reflects light of any wavelength other than the signal light.

Abstract: Included are: an active layer provided between an upper multilayer film reflecting mirror and a lower multilayer film reflecting mirror formed on a GaAs substrate and formed of a periodic structure of a low-refractive-index layer formed of AlxGa1-xAs (0.8?x?1) and a high-refractive-index layer formed of AlyGa1-yAs (0?y?x), at least one of the low-refractive-index layer and the high-refractive-index layer being of n-type; and a lower electrode provided between the lower multilayer film reflecting mirror and the active layer and configured to inject an electric current into the active layer.

Abstract: A laser source includes a semiconductor optical amplifier (SOA) as a gain medium that receives and amplifies an optical signal characterized by at least a wavelength associated with a lasing mode of the laser source. This laser source includes a first optical waveguide and a second optical waveguide optically coupled to the SOA. Furthermore, a wavelength-selective reflector is optically coupled to the first optical waveguide and the second optical waveguide, where a closed loop defined by the SOA, the first optical waveguide, the wavelength-selective reflector and the second optical waveguide defines a cavity of the laser source.

Abstract: One embodiment of the present method and apparatus encompasses an apparatus that may have: a predetermined length, the self-imaging semiconductor waveguide having first and second opposed sides; quantum wells disposed within the self-imaging semiconductor waveguide along the length of the self-imaging semiconductor waveguide, the quantum wells being formed of a quantum well gain material; microchannel cooler that extends substantially the width of the self-imaging semiconductor waveguide, the microchannel cooler located adjacent the first side of the self-imaging semiconductor waveguide; and a plurality of pump arrays arranged along the microchannel cooler opposed from the first side of the self-imaging semiconductor waveguide; wherein the quantum well gain material is photopumped through the microchannel cooler.

Abstract: An edge photo-pumped semiconductor slab amplifier including an undoped semiconductor slab. A first gain structure is formed on an upper surface of the slab and a second gain structure is formed on a lower surface of the slab. The gain structures can be resonant periodic gain structures including a plurality of stacked quantum well layers. Confining layers are coupled to the gain structures to confine a signal beam within the semiconductor slab. Heat sinks are thermally coupled to the confining layers. Optical pump sources are provided along the side edges or coupled to the end edges of the slab so that pump light is introduced into the slab through the edges to provide gain for the quantum well layers.

Abstract: An optical image modulator and a method of manufacturing the same. The optical image modulator includes a substrate, an N electrode contact layer formed on the substrate, a lower distributed Bragg reflection (DBR) layer, a quantum well layer, an upper DBR layer, and a P electrode contact layer sequentially stacked on the N electrode contact layer, a P electrode formed on the P electrode contact layer, and an N electrode formed on the N electrode contact layer. The N electrode is a frame that surrounds the lower DBR layer.

Abstract: A semiconductor optical amplifier includes a semiconductor substrate; an optical waveguide that includes an active layer formed on the semiconductor substrate; and a wavelength selective reflection film that is formed on an end face where signal light is incident on the optical waveguide the wavelength selective reflection film allows transmission of the signal light, and reflects light of any wavelength other than the signal light.

Abstract: A spectrum-sliced seed light module for a wavelength division multiplexing passive optical network (WDM PON) is provided. The seed light module includes an optical amplifier to amplify seed light, an optical wavelength filter to transmit broadband light, which is output in opposite direction to an output direction of the seed light, at periodic frequency intervals, and a reflective mirror to reflect light which is spectrum-sliced through the optical wavelength filter to the optical wavelength filter.

Abstract: A high-power pulse light generator includes: a master oscillator generating oscillated pulse light in synchronization with a master clock signal; an optical amplifier amplifying the oscillated pulse light output from the master oscillator and outputting high-power pulsed light; a driving unit driving a pumping semiconductor laser in synchronization with the master clock signal; and a control unit controlling the driving unit so that the driving current to be supplied to the pumping semiconductor laser becomes lower than or equal to a set value at which the pumping semiconductor laser is not in a laser oscillation state when returning light from an irradiated body with the high-power pulsed light reaches the pumping semiconductor laser connected to the optical amplifier, the control unit determining a timing of the control in accordance with an optical path length between the irradiated body and the pumping semiconductor laser.

Abstract: A semiconductor optical amplifier for amplifying an optical signal. The amplifier comprises an input for receiving the optical signal and an output for outputting an amplified version of the optical signal. A semiconductor active medium is provided for defining an amplification path extending between the input and the output for amplifying the optical signal as the optical signal propagates along the amplification path. A control means selectively controls the amplified spontaneous emission (ASE) of the semiconductor optical amplifier. The control means is co-operable with the active medium for selectively varying carrier density along the amplification path.

Abstract: An optical circuit is described which may include an SOA-MZI circuit providing an output signal; and a polarization filtering device (PFD) configured to receive the output signal of the SOA-MZI and to provide at least one signal at the output of the PFD.

Abstract: A wavelength-variable light source according to the present invention includes 2×2 3-dB directional coupler 3, closed loop-type optical circuit 5, at least two resonators 1 and 2, and optical amplifier 4. The closed loop-type optical circuit 5 is formed by connecting ends of the two output paths of 3-dB directional coupler 3. The resonators 1 and 2 have different resonance wavelength periods. One end of optical amplifier 4 is optically connected to one input path end 6 of 3-dB directional coupler 3. Lasing light is output from the other end of the optical amplifier 4. A non-reflecting structure is formed at the other input path end 7 of the 3-dB directional coupler. The wavelength-variable light source configured as described above includes an element configured to vary the resonance wavelength of the resonator 1 or 2.

Abstract: An optical amplifying device includes an optical system including a first end and a second end, the optical system configured to receive signal light through the first end, to lead the received signal light to an optical amplifying medium, and to output the signal light amplified by the optical amplifying medium through the second end, the optical system including a first optical isolator and a second optical isolator which are arranged on respective sides of the optical amplifying medium, wherein with respect to a direction in which the signal light propagates, each of the first optical isolator and the second optical isolator is capable of allowing light propagating in the same direction to pass therethrough and blocking light propagating in the opposite direction, and the first optical isolator and the second optical isolator have different center isolation wavelengths for the light propagating in the opposite direction.

Abstract: An optical amplifier has a low polarization dependent gain. The amplifier includes a gain medium including a plurality of adjoining semiconductor layers to provide optical gain wherein the adjoining semiconductor layers define one or more quantum wells for electrons and are operative to provide both direct and indirect electron-hole transitions in the gain medium. A first quantized electron energy level in the conduction band and a first quantized hole energy level in the valence band is located in a first layer. A further first quantized hole energy level in the valence band is located in an adjacent second layer.

Abstract: A light source device capable of varying a light oscillation wavelength includes a plurality of optical gain media, a dispersing element, and a wavelength selecting element. The optical gain media amplify light, and have gain wavelength bands that partially overlap and different maximum gain wavelengths. The dispersing element is formed of a single element. Each of light beams emitted from the optical gain media is incident on the dispersing element. The dispersing element disperses the light beams emitted from the optical gain media into light beams of different wavelengths. The wavelength selecting element selects a light beam of a predetermined wavelength from the light beams of different wavelengths into which the light beams emitted from the optical gain media are dispersed by the dispersing element. The light source device emits the light beam of the predetermined wavelength selected by the wavelength selecting element.

Abstract: Provided are a reflective semiconductor optical amplifier (R-SOA) and a superluminescent diode (SLD). The R-SOA includes: a substrate; an optical waveguide including a lower clad layer, an active layer independent of the polarization of light, and an upper clad layer sequentially stacked on the substrate, the optical waveguide comprising linear, curved, and tapered waveguide areas; and a current blocking layer formed around the optical waveguide to block a flow of current out of the active layer, wherein the linear and curved waveguide areas have a single buried hetero (BH) structure, and the tapered waveguide area has a dual BH structure.

Abstract: A laser source includes a semiconductor optical amplifier (SOA) as a gain medium that receives and amplifies an optical signal characterized by at least a wavelength associated with a lasing mode of the laser source. This laser source includes a first optical waveguide and a second optical waveguide optically coupled to the SOA. Furthermore, a wavelength-selective reflector is optically coupled to the first optical waveguide and the second optical waveguide, where a closed loop defined by the SOA, the first optical waveguide, the wavelength-selective reflector and the second optical waveguide defines a cavity of the laser source.

Abstract: A gain medium and an interband cascade laser, having the gain medium are presented. The gain medium can have one or both of the following features: (1) the thicknesses of the one or more hole quantum wells in the hole injector region are reduced commensurate with the thickness of the active hole quantum well in the active quantum well region, so as to place the valence band maximum in the hole injector region at least about 100 meV lower than the valence band maximum in the active hole quantum well; and (2) the thickness of the last well of the electron injector region is between 85 and 110% of the thickness of the first active electron quantum well in the active gain region of the next stage of the medium. A laser incorporating a gain medium in accordance with the present invention can emit in the mid-IR range from about 2.5 to 8 ?m at high temperatures with room-temperature continuous wave operation to wavelengths of at least 4.

Abstract: An optical modulator and a method for operating the optical modulator are provided, the optical modulator contains at least two semiconductor optical amplifier sections that are arranged in a cascaded structure. An information signal is applicable to one of the semiconductor optical amplifier sections and an inverse information signal is applicable to another of the semiconductor optical amplifier sections. In addition, a communication system containing at least one such modulator is suggested.

Abstract: A light source device configured as a master oscillator power amplifier includes a mode locked laser unit having an external resonator and a semiconductor optical amplifier that amplifies and modulates laser light emitted from the mode locked laser unit. The width in a lateral direction of a waveguide on an incident side of the semiconductor optical amplifier is set so that a horizontal lateral mode of the waveguide on the incident side of the semiconductor optical amplifier becomes multiple modes, and a magnification conversion unit that converts a magnification of incident light from the mode locked laser unit to the semiconductor optical amplifier is disposed so that a basic mode is selectively excited in optical coupling on the incident side of the semiconductor optical amplifier.

Abstract: A waveform shaping circuit enhances a rise of a waveform of a voltage applied to a load and includes an input unit to which the voltage is input; a supply unit configured to apply the voltage input from the input unit to the load; a first resistor connected in series between the input unit and the supply unit; a second resistor branch-connected to a portion between the input unit and the supply unit; and a stub connected to the first resistor or the second resistor and including a transmission path of a given length configured to shuttle the voltage by transmitting and reflecting the voltage as a voltage wave.

Abstract: A semiconductor optical device includes a first mode converting core, a light amplification core, a second mode converting core, and a light modulation core disposed in a first mode converting region, a light amplification region, a second mode converting region, and a light modulating region of a semiconductor substrate, respectively, and a current blocking section covering at least sidewalls and a top surface of the light amplification core. The first mode converting core, the light amplification core, the second mode converting core, and the light modulation core are arranged along one direction in the order named, and are connected to each other in butt joints. The current blocking section includes first, second, and third cladding patterns sequentially stacked. The second cladding pattern is doped with dopants of a first conductivity type, and the first and third cladding patterns are doped with dopants of a second conductivity type.

Abstract: A system for providing a sliced optical pulse is disclosed. The system can comprise a master oscillator (MO) configured to generate an optical pulse at a first spectral bandwidth. The system can also comprise a semiconductor optical amplifier (SOA) configured to slice the optical pulse to generate a sliced optical pulse that has a second spectral bandwidth. The second spectral bandwidth can be smaller than the first spectral bandwidth.

Abstract: The invention relates to an optical regenerator for a differential phase modulated data signal which comprises, in addition to a unit for bit-by-bit gauge leveling, a unit for the regeneration of the phase of individual symbols of the differential phase modulated data signal. After the bit-by-bit gauge leveling, the data signal that is preset in amplitude is divided into a first and a second data signal. Phase errors of individual signals are detected for the first data signal in a phase error detection unit, are transformed into a correction signal, and are conveyed to a phase error correction unit. The second data signal is corrected in the phase error correction unit, depending on the correction signal conveyed thereto in the phase of said data signal, in such a way that a differential phase modulated data signal, regenerated in amplitude and in phase, is delivered at the output of the correction unit.

Abstract: In an optical amplifier including a metal layer having an incident/reflective surface adapted to receive incident light and output its reflective light, and a dielectric layer formed on an opposite surface of the metal layer opposing the incident/reflective surface, the incident light excites surface plasmon resonance light in the metal layer while the dielectric layer is excited, so that an extinction coefficient of the dielectric layer is made negative.

Abstract: An optical amplification apparatus includes a front-stage semiconductor optical amplifier which amplifies an input light and a rear-stage semiconductor optical amplifier which amplifies an amplified light outputted from the front-stage semiconductor optical amplifier. The front-stage semiconductor optical amplifier exercises auto level control of an output light by exercising variable control of driving current which flows according to applied voltage higher than light emitting threshold voltage of an internal optical amplification element. The rear-stage semiconductor optical amplifier performs gate switching of a transmitted light by exercising switching control of driving current. By doing so, distortion of a waveform is controlled and optical communication quality can be improved.

Abstract: An optical amplifier suitable for coherently amplifying surface plasmon-polariton waves with high gain and low noise over visible and infrared wavelengths. The optical amplifier is comprised of a thin strip of material having a complex permittivity with a negative real part, in contact on at least one side with an optical gain medium, where the strip has finite width and thickness such that optical radiation couples to the strip and propagates along its length as a surface plasmon-polariton wave. The surface plasmon-polariton amplifier can also be incorporated into a resonant cavity to form a plasmon-polariton laser.

Abstract: An integrated semiconductor optical-emitting device includes a surface-emission laser diode and an EA-type semiconductor optical modulator integrated commonly on a GaAs substrate in a direction perpendicular to the GaAs substrate.

Abstract: An all-optical sampling device using four-wave mixing in third-order optically nonlinear materials is described. The four-wave mixing based sampler comprises a waveguide combiner, which adds a gate optical signal to a signal of interest to be sampled. In a four-wave mixing region, a sampled signal at the output optical frequency is produced. All of the optical signals are sent to a passive optical filter, which preferentially discards the gate and signal optical frequencies, but preserves the sampled signal at the output optical frequency. The sampled signal at the output optical frequency can be observed, displayed, recorded or otherwise manipulated.

Abstract: A semiconductor optical amplification module that can suppress ringing without increasing power consumption or circuit size or inhibiting high-speed operation. A semiconductor optical amplifier outputs an optical signal inputted according to driving current outputted from a drive circuit. A diode is connected in parallel with the semiconductor optical amplifier. As a result, it becomes possible to suppress ringing without connecting a large resistor to the drive circuit.

Abstract: An optical device comprises an optical device stage, which comprises an optical input, an optical AND gate, an optical flip-flop and an optical output. The optical input is arranged to receive an optical input pulse at an input wavelength. The optical AND gate comprises a first input arranged to receive a part of said optical input pulse, a second input arranged to receive at least a part of a flip-flop optical output signal, and an output. The optical AND gate is arranged to generate an AND gate optical output pulse dependent on said flip-flop optical output signal. The optical flip-flop comprises a first input arranged to receive a further part of said optical input pulse, a second input arranged to receive a said AND gate optical output pulse, and an output. The optical flip-flop is arranged to generate said flip-flop output signal at a flip-flop output wavelength. At least a part of the flip-flop output signal is provided to said output.

Abstract: A regenerative amplifier according to one aspect of this disclosure is used in combination with a laser device, and the regenerative amplifier may include: a pair of resonator mirrors constituting an optical resonator; a slab amplifier provided between the pair of the resonator mirrors for amplifying a laser beam with a predetermined wavelength outputted from the laser device; and an optical system disposed to configure a multipass optical path along which the laser beam is reciprocated inside the slab amplifier, the optical system transferring an optical image of the laser beam at a first position as an optical image of the laser beam at a second position.

Abstract: An optical amplifier apparatus includes an optical amplifier including an amplification medium doped with an active substance, the amplification medium excited in order to amplify light; a semiconductor optical amplifier arranged after the optical amplifier; a driver for supplying a driving current with respect to the semiconductor optical amplifier in order that the semiconductor optical amplifier has an amplification characteristic with respect to an input light, the amplification characteristic including a gain non-saturated region and a gain saturated region; and an input-light level adjuster for adjusting an out put light of the optical amplifier to the input light level of the semiconductor optical amplifier, the input light level being set up between the gain non-saturated region and the gain saturated region.

Abstract: A method for amplifying and dynamically adjusting an optical signal is provided in the present invention, which includes: a first optical tap splitting out a small part of the optical signal, which is converted into an electric signal via a first optical detector and is then output to a high speed gain control circuit, in proportion from an uplink burst optical signal, and outputting a remainder of the optical signal to an optical amplifier; the high speed gain control circuit dynamically adjusting the control signal loaded on the optical amplifier according to the input electric signal which varies with uplink burst slots; and the optical amplifier dynamically adjusting a gain value according to the loaded control signal to make peak powers of the output uplink optical signals in different burst slots equal, thus achieving output power equalization.

Abstract: Disclosed is an optical amplifier which includes an upward optical amplifier configured to amplify an input upward optical signal of an input optical signal; and a control circuit configured to control an operation of the upward optical amplifier according to whether an upward stream is detected from the input upward optical signal.

Abstract: Disclosed is a light generating device which comprises a first reflective semiconductor optical amplifier emitting a first light along a first direction, a second reflective semiconductor optical amplifier emitting the second light in a direction opposite to the first direction, an optical distributer reflecting a part of an incident light and to pass the remaining of the incident light, and an optical comb filter passing a wavelength component of a specific period.

Abstract: An interband cascade gain medium is provided. The gain medium can include at least one thick separate confinement layer comprising Ga(InAlAs)Sb between the active gain region and the cladding and can further include an electron injector region having a reduced thickness, a hole injector region comprising two hole quantum wells having a total thickness greater than about 100 ?, an active gain quantum well region separated from the adjacent hole injector region by an electron barrier having a thickness sufficient to lower a square of a wavefunction overlap between a zone-center active electron quantum well and injector hole states, and a thick AlSb barrier separating the electron and hole injectors of at least one stage of the active region.

Abstract: A new broadband discrete spectrum light source comprising a gain medium placed in a feedback cavity is disclosed. A design for a feedback cavity including reflectors having raised-edge reflectivity is presented. Bandwidth enhancement is achieved by selectively enhancing the intensity of the discrete emission lines near the band edges of the gain medium spectrum. The bandwidth of a broadband discrete spectrum light source is further enhanced by digitally applying a spectral correction to each detected signal according to a predetermined correction profile. A combined effect of using a broadband discrete spectrum light source and applying spectral correction to the detected signal in an imaging system such as a Spectral Domain Optical Coherence Tomography (SD-OCT) imaging system, results in a desired spectral profile and a bandwidth necessary to achieve higher depth resolution for obtaining high quality diagnostic images.

Abstract: A gain medium and an interband cascade laser, having the gain medium are presented. The gain medium can have one or both of the following features: (1) the thicknesses of the one or more hole quantum wells in the hole injector region are reduced commensurate with the thickness of the active hole quantum well in the active quantum well region, so as to place the valence band maximum in the hole injector region at least about 100 meV lower than the valence band maximum in the active hole quantum well; and (2) the thickness of the last well of the electron injector region is between 85 and 110% of the thickness of the first active electron quantum well in the active gain region of the next stage of the medium. A laser incorporating a gain medium in accordance with the present invention can emit in the mid-IR range from about 2.5 to 8 ?m at high temperatures with room-temperature continuous wave operation to wavelengths of at least 4.

Abstract: An integrated semiconductor laser element includes: semiconductor lasers that oscillate at different oscillation wavelengths from one another, each laser oscillating in a single mode; an optical coupler; and a semiconductor optical amplifier. At least one of active layers of the semiconductor lasers and an active layer of the semiconductor optical amplifier have a same thickness and a same composition that is set to have a gain peak wavelength near a center of a wavelength band formed by the oscillation wavelengths. The semiconductor optical amplifier includes: an equal width portion formed on a side of the optical coupler to guide light in a single mode; and an expanded width portion formed on a light output side. The width of the expanded width portion is set according to a total thickness of well layers of the active layer of the semiconductor optical amplifier.

Abstract: An optical-switch drive circuit including a driver unit that generates, in response to a control signal, an on/off signal for driving a semiconductor optical amplifier gate switch, and a buffer unit having a high input impedance and connected between an output terminal outputting the on/off signal and the semiconductor optical amplifier gate switch. In the optical-switch drive circuit the buffer unit may include a high-resistance voltage divider that is connected with the output terminal, and an operational amplifier that buffers, and provides to the semiconductor optical amplifier gate switch, a divided voltage of the voltage divider.

Abstract: A semiconductor optical amplifier is provided having polarization independent optical amplification characteristics and a flat gain spectrum over a wide wavelength region. In the semiconductor optical amplifier including a multi-quantum well active layer formed of well layers and barrier layers alternately laminated to each other on an InP substrate, the well layers and the barrier layers each have a tensile strain, and the tensile strain of each of the barrier layers is larger than the tensile strain of each of the well layers.

Abstract: Provided is a laser apparatus including: a DFB fiber laser 40 including, as an amplitude medium, a rare earth doped silica optical fiber codoped with a high concentration of aluminum; an optical feedback path 50 formed by a ring-shaped optical fiber; and an optical coupler 70 a) feeding back a part of an output of the DFB fiber laser 40 to the DFB fiber laser 40 via the optical feedback path 50, and b) outputting, to outside, another part of the output of the DFB fiber laser 40, where the optical fiber forming the optical feedback path 50 is longer than a length at which a relaxation oscillation noise in the output to the outside becomes ?110 dB/Hz.

Abstract: A semiconductor optical amplifier (SOA) with efficient current injection is described. Injection current density is controlled to be higher in some areas and lower in others to provide, e.g., improved saturation power and/or noise figure. Controlled injection current can be accomplished by varying the resistivity of the current injection electrode. This, in turn, can be accomplished by patterning openings in the dielectric layer above the current injection metallization in a manner which varies the series resistance along the length of the device.