Abstract: The present invention discloses a laser amplifier with high gain and low thermally induced optical aberrations on the amplified laser beam. The amplifier designs allow simple multipass configurations to optimally extract the gain and reduce thermally induced index of refraction aberrations, making it possible to obtain an amplified laser beam of high quality combined with very high overall gains comparable to those achievable with expensive regenerative amplifiers. The amplifier includes a thin active laser solid to create the population inversion and associated heat generation within the thin laser active solid possible for the desired gain value. The system includes a cooling device in thermal contact with the thin active laser solid to provide good heat transport and high reflectivity coatings at the wavelengths of the pump and laser wavelengths. The pump light sources are laser diodes tuned to the maximum absorption of the laser active material.

Abstract: In an optical amplifier including a metal layer having an incident/reflective surface adapted to receive incident light and output its reflective light, and a dielectric layer formed on an opposite surface of the metal layer opposing the incident/reflective surface, the incident light excites surface plasmon resonance light in the metal layer while the dielectric layer is excited, so that an extinct ion coefficient of the dielectric layer is made negative.

Abstract: The present invention includes a laser amplifier and a method of making the same. The laser amplifier of the present invention includes a gain medium layer having a first index of refraction, and a coupling layer optically coupled to the gain medium. In the various embodiments described herein, the coupling layer can have a second index of refraction less than the first index of refraction. The laser amplifier described herein can also include an evanescent layer disposed between the gain medium and the coupling layer. The evanescent layer can have a third index of refraction less than the second index of refraction. The laser amplifier provides high power, efficient laser resonance through frustrated total internal reflection and total internal reflection while simultaneously providing for the minimization of waste heat in the gain medium layer.

Abstract: A multi-band hybrid amplifier is disclosed for use in optical fiber systems. The amplifier uses Raman laser pumps and semiconductor optical amplifiers in series to produce a relatively level gain across the frequency range of interest. Multiple Raman pumps are multiplexed before coupling into the fiber. The Raman amplified optical signal may be demultiplexed and separately amplified by the SOAs before remultiplexing. Gain profiles of the Raman pumps and the SOAs are selected to compensate for gain tilt and to alleviate the power penalty due to cross-gain modulation in the SOAs. The disclosed hybrid amplifier is especially useful in coarse wavelength division multiplexing (CWDM) systems.

Abstract: An optical amplifying medium, a method of manufacturing the optical amplifying medium are provided, and an optical device comprising the optical amplifying medium. The optical amplifying medium includes a multi-layer structure in which a first material layer doped with an activator and a second material layer that comprises a sensitizer are stacked.

Abstract: In the three-terminal optical signal amplifying device 10, a portion of the neighboring light LS at other wavelength than that of the first wavelength ?1 that is selected from the output light from the element 14 by the optical add drop filter 16, and the control light LC at the second wavelength ?2 input from the external are together input to the second semiconductor optical amplifying element 18. The output light including the output signal light LOUT at the second wavelength ?2 and the neighboring light at the neighboring wavelength to the second wavelength ?2 that is modulated and controlled by the control light LC in the cross gain modulation is output from the second semiconductor optical amplifying element 18. And the output signal light LOUT at the second wavelength ?2 passes through the wavelength selecting filter 20.

Abstract: On the upstream side of a quantum dot optical amplifier, a polarization beam splitter with one input and two outputs is provided. Two optical fibers connected to output sections of the polarization beam splitter are connected to input sections of the quantum dot optical amplifier in a state that both of the optical fibers have an electric field whose direction being adjusted to maximize its gain, and one optical fiber is twisted by 90.degree. to the other optical fiber. On the downstream side of the quantum dot optical amplifier, a polarization beam splitter with two inputs and one output is provided. Between two optical fibers connected to the polarization beam splitter, one is twisted by 90.degree. to the other. This twisting direction is reverse to the twisting direction of the two optical fibers connected to the input sections of the quantum dot optical amplifier.

Abstract: A semiconductor optical device comprises a lower cladding layer of a first conductive type, an upper cladding layer of a second conductive type, and an active layer. The lower cladding layer has a first region and a second region. The first region extends in a direction of a predetermined axis, and the second region is located adjacent to the first region. The active layer is provided between the first region of the lower cladding layer and the upper cladding layer. The thickness of the active layer is changed in the direction such that TM mode gain and TE mode gain are substantially equal to each other.

Abstract: An optical pulse position modulation receiver relying on the gain dynamics in a semiconductor optical amplifier (SOA). Optical PPM signal pulses and periodic optical clock pulses at a different frequency and/or polarization than the signal pulses are coupled into an SOA. Due to the high optical power of the clock pulses, the SOA gain will drop to a small value after each clock pulse. The SOA will then amplify each signal pulse that follows the clock pulse, and the gain will depend on the delay between the signal pulse and the preceding optical clock pulse. The optical output of the SOA can then be converted to an electrical signal by a photodetector.

Abstract: The reflectance of a semiconductor optical amplifier (1) on the side where an external cavity is formed is 0.1% at most. The finesse value obtained by dividing the period of the transmission characteristic of the wavelength selection filter (3) by the half value width of the transmission characteristic is 4 or more and 25 or less. Even when the reflectance of a cavity side end face (1bb) of the semiconductor optical amplifier (1) is about 0.1%, a wavelength accuracy of ±1.5 GHz can be achieved by setting the finesse to 4 or more. In addition, a wavelength accuracy of about ±0.5 GHz can be achieved by setting the finesse to 8 or more. In order to suppress insertion loss, it is preferable to set the finesse of the FP etalon to 25 or less. This makes it possible to implement an external cavity wavelength tunable laser with high wavelength accuracy.

Abstract: An optical amplifier apparatus includes an optical amplifier including an amplification medium doped with an active substance, the amplification medium excited in order to amplify light; a semiconductor optical amplifier arranged after the optical amplifier; a driver for supplying a driving current with respect to the semiconductor optical amplifier in order that the semiconductor optical amplifier has an amplification characteristic with respect to an input light, the amplification characteristic including a gain non-saturated region and a gain saturated region; and an input-light level adjuster for adjusting an out put light of the optical amplifier to the input light level of the semiconductor optical amplifier, the input light level being set up between the gain non-saturated region and the gain saturated region.

Abstract: A semiconductor optical amplifier is provided having polarization independent optical amplification characteristics and a flat gain spectrum over a wide wavelength region. In the semiconductor optical amplifier including a multi-quantum well active layer formed of well layers and barrier layers alternately laminated to each other on an InP substrate, the well layers and the barrier layers each have a tensile strain, and the tensile strain of each of the barrier layers is larger than the tensile strain of each of the well layers.

Abstract: Several discrete hybrid amplifiers are used in parallel for amplifying an optical signal in an optical fiber system. An optical signal is first split into two or more separate signals each with a separate wavelength band. Each wavelength band is then amplified by a Raman pump utilizing a length of highly non-linear fiber as the gain medium, and by an SOA amplifier. The combination of the Raman amplifier and the SOA yields a level gain over the wavelength band. The amplified wavelength band signals are then recombined. The disclosed amplifier is especially useful in coarse wavelength division multiplexing (CWDM) systems and in local access portions of the network.

Abstract: An injection seed of an injection locking type light source includes a broadband light source, a seed circulator receiving and transmitting a light from the light source to a seed optical filter passing only a desired wavelength band among the light beams from the light source and passing through the seed circulator, and an injection light source receiving a light beam of a specific wavelength band passing through the seed optical filter and outputting the wavelength-locked light beam without modulation to the seed optical filter at a predetermined power. The seed optical filter receives and outputs the wavelength-locked light beam from the injection light source to the seed circulator, and the seed circulator receives and outputs the wavelength-locked light beam as a seed beam. Since noise signal of a seed beam is small, noise signal of a final transmitting beam is also small and preferable for the high speed communication.

Abstract: Methods, devices and systems for generating ultrashort optical linear chirped pulses with very high power by amplifying the pulses so that their temporal duration is longer than the storage time of the amplifying medium. The additional gain factor is related to the ratio of the storage time to the stretched pulse. A preferred embodiment connects a mode locked laser source that generates optical pulses whose duration is stretched with a chirped fiber Bragg grating. Embodiments include methods, devices and systems causing an extreme chirped pulse amplifier (XCPA) effect in an oscillator.

Abstract: Methods, devices and systems for generating ultrashort optical linear chirped pulses with very high power by amplifying the pulses so that their temporal duration is longer than the storage time of the amplifying medium. The additional gain factor is related to the ratio of the storage time to the stretched pulse. A preferred embodiment connects a mode locked laser source that generates optical pulses whose duration is stretched with a chirped fiber Bragg grating. Embodiments include methods, devices and systems causing an extreme chirped pulse amplifier (XCPA) effect in an oscillator.

Abstract: Methods and corresponding apparatus for optical amplification in semiconductors, particularly indirect band-gap semiconductors, and most particularly in silicon. A first aspect of the invention employs certain doping elements to provide inter-band-gap energy levels in combination with optical or current-injection pumping. The doping element, preferably a noble metal and most preferably Gold, is chosen to provide an energy level which enables an energy transition corresponding to a photon of wavelength equal to the signal wavelength to be amplified. The energy transition may be finely “adjusted” by use of standard doping techniques (such as n-type or p-type doping) to alter the conduction and valence band energy levels and thereby also the magnitude of the energy transition. A second aspect of the invention relates to the use of a non-homogeneous heat distribution which has been found to lead to optical amplification effects.

Abstract: A pumping unit supplies pumping light to a fiber connecting medium; a light monitoring unit detects light power of multiple-wavelength light; and a control unit controls the pumping light based on light power detected by the light monitoring unit and connecting medium information indicating optical characteristics in the connecting medium. The connecting medium information includes information indicating a fiber type of the fiber connecting medium, information indicating a length of the fiber connecting medium, an average fiber loss coefficient of the fiber connecting medium and an intra-station loss value.

Abstract: The heterostructures are used for creation of semiconductor injection emission sources: injection lasers, semiconductor amplifying elements, semiconductor optical amplifiers that are used in fiber optic communication and data transmission systems, in optical superhigh-speed computing and switching systems, in development of medical equipment, laser industrial equipment, frequency-doubled lasers, and for pumping solid-state and fiber lasers and amplifiers.

Abstract: A method of modulating an optical signal passing through a waveguide structure with a plurality of sections including electrically biasing one or more of the sections with a bias voltage to achieve a predetermined level of chirp, modulation depth, or insertion loss. Preferably, two or more sections are biased with a reverse bias voltage, a zero bias voltage, or forward bias voltage.

Abstract: Distributed Bragg reflector (DBR) with reduced DX centers. A DBR includes an AlAs region. The AlAs region includes essentially homogeneous AlAs. The DBR further includes a A1GaAs region. The AlGaAs region includes alternating thin layers of AlAs and GaAs. The alternating thin layers of AlAs and GaAs are arranged such the the AlGaAs region appears as a layer of A1GaAs with appropriate concentrations of Al and Ga.

Abstract: A semiconductor optical amplification device is disclosed that has a gain spectrum of a wide bandwidth. The semiconductor optical amplification device includes an InP substrate and an active layer on the InP substrate. The active layer has a quantum well structure formed by alternately stacking a barrier layer and a well layer, the barrier layer is formed from a tensile-strained InGaAs film, and the well layer is formed from a compressively-strained InGaAs film.

Abstract: The present invention discloses a laser amplifier with high gain and low thermally induced optical aberrations on the amplified laser beam. The amplifier designs allow simple multipass configurations to optimally extract the gain and reduce thermally induced index of refraction aberrations, making it possible to obtain an amplified laser beam of high quality combined with very high overall gains comparable to those achievable with expensive regenerative amplifiers. The amplifier includes a thin active laser solid to create the population inversion and associated heat generation within the thin laser active solid possible for the desired gain value. The system includes a cooling device in thermal contact with the thin active laser solid to provide good heat transport and high reflectivity coatings at the wavelengths of the pump and laser wavelengths. The pump light sources are laser diodes tuned to the maximum absorption of the laser active material.

Abstract: A polarization-independent SOA is provided which uses an InP substrate (11) as a semiconductor substrate and uses GaInNAs having introduced tensile strain as an active layer (14). With this configuration, the polarization independence is achieved by introducing the tensile strain, and high saturation optical output power is realized by reducing the film thickness of the active layer (14) as well as the gain peak wavelength is increased by reducing the band gap of the active layer (14) through use of GaInNAs made by adding nitrogen (N) to GaInAs as a material of the active layer (14) so as to achieve high gain especially in C-band and L-band even when band filling exits at the time of injecting a high current into the active layer (14).

Abstract: In one embodiment, a dark channel array is provided which includes gain channels, each gain channel being configured to emit an output beam, and which includes a dark channel configured to cause output beams from the gain channels to be coherently couple in phase with each other.

Abstract: To provide a photonic crystal semiconductor device which enables various kinds of optical devices having a photonic crystal structure which is readily formed using a semiconductor and a semiconductor manufacturing process, and a manufacturing method thereof. The object can be achieved by a photonic crystal structure, including a lower DBR layer 1, a core layer 2, an upper DBR layer 3, and a dielectric multilayer film 6 which are sequentially laminated from an n-InP substrate 11 side, a plurality of holes 9 formed in the direction of a film thickness in the core layer 2 and the upper DBR layer 3, and a line defect portion 10 with none of the plurality of holes formed therein and disposed between the plurality of holes 9, wherein the line defect portion 10 serves as an optical waveguide.

Abstract: Nanomaterials for use in optoelectronic applications, and particularly nanocomposite optical amplifiers. nanocomposite optical amplifiers (NOAs), e.g., provided on integrated optical chips, for cost-effective broadband amplification across the entire clear-window of optical fiber. It is expected that such systems could provide a 15× increase in bandwidth over existing technology, while remaining compatible with all future advances in bit-rate and channel spacing.

Abstract: A wavelength conversion system includes a Mach-Zehnder interferometer including two optical waveguides, a non-linear medium provided on one of the two optical waveguides, and a branching ratio adjuster for adjusting the branching ratio of multiplexed light produced by multiplexing signal light and pumping light so that the powers of the signal light and the pumping light which are to be emitted from the two optical waveguides are equal to each other. The multiplexed light whose branching ratio is adjusted by the branching ratio adjuster is introduced into the two optical waveguides such that the non-linear medium generates phase conjugation light of the signal light and the light guided through the one optical waveguide and the light guided through the other one of the two optical waveguides interfere with each other so that the phase conjugation light is extracted as wavelength conversion light.

Abstract: An optical bistable silicon Raman laser is disclosed, which provides digital signal regeneration, reshaping and wavelength conversion. An apparatus according to aspects of the present invention includes an optical waveguide disposed in semiconductor material. First and second reflectors are disposed in the optical waveguide. The first and second reflectors define a cavity in the optical waveguide. The cavity is to receive a first optical beam having a first wavelength. A power level of the first optical beam received by the cavity rising above a second power level results in emission of a second optical beam of a second wavelength from the cavity until the power level of the first optical beam received by the cavity falls below a first power level. The first power level is less than the second power level.

Abstract: An optical circuit is described which may include an SOA-MZI circuit providing an output signal; and a polarization filtering device (PFD) configured to receive the output signal of the SOA-MZI and to provide at least one signal at the output of the PFD.

Abstract: An optical signal amplifier capable of compensating the attenuation of optical signals during transmission is provided. The optical signal amplifier includes: a substrate having first and second surfaces opposing each other and a recess formed on the first surface; an LED (light emitting diode) mounted within the recess to output pumping light; and an SRSO (silicon rich silicon oxide) optical amplifier for amplifying an input optical signal using the pumping light and outputting the amplified signal.

Abstract: A semiconductor optical amplifier (SOA) with efficient current injection is described. Injection current density is controlled to be higher in some areas and lower in others to provide, e.g., improved saturation power and/or noise figure. Controlled injection current can be accomplished by varying the resistivity of the current injection electrode. This, in turn, can be accomplished by patterning openings in the dielectric layer above the current injection metallization in a manner which varies the series resistance along the length of the device.

Abstract: The invention provides a device and a method for extending the bandwidth of short wavelength and long wavelength fiber optic lengths. The invention provides for an optical transmitter package device comprising: a laser diode; and a semiconductor optical amplifier connected directly after and in close proximity to the laser diode, wherein the semiconductor optical amplifier is adapted to operate in a frequency domain such that the semiconductor optical amplifier filters and reshapes optical wavelengths from the laser diode, and wherein the semiconductor optical amplifier is biased below an amplification threshold for the semiconductor optical amplifier. The device may also comprises a feedback circuit which comprises an optical splitter, wherein the feedback circuit samples reshaped optical output from the semiconductor optical amplifier and dynamically adjusts one or both of the semiconductor optical amplifier and the laser diode.

Abstract: A semiconductor-based Raman ring amplifier is disclosed. A method according to aspects of the present invention includes directing a pump optical beam having a pump wavelength and an input pump power level from an optical waveguide into a ring resonator. The optical waveguide and ring resonator are comprised in semiconductor material. A signal optical beam having a signal encoded thereon at a signal wavelength is directed from the optical waveguide into the ring resonator. The pump optical beam is resonated within the ring resonator to increase a power level of the pump optical beam to a power level sufficient to amplify the signal optical beam via stimulated Raman scattering (SRS) within the ring resonator. A free carrier concentration in the optical waveguide and the ring resonator is reduced to reduce attenuation of the pump optical beam and the signal beam.

Abstract: Methods and corresponding apparatus for optical amplification in semiconductors, particularly indirect band-gap semiconductors, and most particularly in silicon. A first aspect of the invention employs certain doping elements to provide inter-band-gap energy levels in combination with optical or current-injection pumping—The doping element, preferably a noble metal and most preferably Gold, is chosen to provide an energy level which enables an energy transition corresponding to a photon of wavelength equal to the signal wavelength to be amplified. The energy transition may be finely “adjusted” by use of standard doping techniques (such as n-type or p-type doping) to alter the conduction and valence band energy levels and thereby also the magnitude of the energy transition. A second aspect of the invention relates to the use of a non-homogeneous heat distribution which has been found to lead to optical amplification effects.

Abstract: An optical modulation apparatus is provided which implements a stable amplifying function by reducing the effect of reflected light rays from end faces of a bidirectional optical amplifier by imposing a numerical limitation on the relationship between the gain of the bidirectional optical amplifier and the loss of the optical modulator, or by inserting a polarization rotation section in a reflection type optical modulator including the bidirectional optical amplifier or in a multi-wavelength collective optical modulation system combining the multiple optical modulators. An optical modulation apparatus is provided which implements a stable amplifying function and cost reduction by reducing the effect of reflected light rays by interposing optical isolators at every alternate SOAs in a transmission-type optical modulation apparatus including a plurality of semiconductor optical amplifiers (SOAs) connected in a multistage fashion.

Abstract: A method and system includes a pulse reshaper for reshaping and re-amplifying optical signals in a communications network. In one embodiment, a vertical cavity semiconductor optical amplifier (VCSOA) device, comprising dual mode reflectors optically cooperating at each of an input signal wavelength (?s) and an offset wavelength (?C) proximate the input signal wavelength (?s) to provide thereby non-linear amplification of input signal (?s).

Abstract: A polarization-independent SOA having an InP substrate used as a semiconductor substrate, and an active layer taking an MQW structure formed of a barrier layer made of GaInAs with tensile strain applied thereto and a well layer made of GaInNAs with no strain applied thereto alternately laminated in a plurality of layers, here, four layers of the well layer and five layers of the barrier layer are alternately laminated, is proposed.

Abstract: A multi-band hybrid amplifier is disclosed for use in optical fiber systems. The amplifier uses Raman laser pumps and semiconductor optical amplifiers in series to produce a relatively level gain across the frequency range of interest. Multiple Raman pumps are multiplexed before coupling into the fiber. The Raman amplified optical signal may be demultiplexed and separately amplified by the SOAs before re-multiplexing. Gain profiles of the Raman pumps and the SOAs are selected to compensate for gain tilt and to alleviate the power penalty due to cross-gain modulation in the SOAs. The disclosed hybrid amplifier is especially useful in coarse wavelength division multiplexing (CWDM) systems.

Abstract: A MEMS-tunable semiconductor optical amplifier (SOA). A device in accordance with the present invention comprises a substrate, a first mirror, coupled to the substrate, a second mirror, an active region, coupled between the first and second mirror, and a microelectromechanical actuator, coupled to the second mirror, wherein a voltage is applied to the microelectromechanical actuator to tune the SOA.

Abstract: A system includes a pulse reshaper for reshaping and re-amplifying optical signals in a communications network. In one embodiment, a vertical cavity semiconductor optical amplifier (VCSOA) device, comprising dual mode reflectors optically cooperating at each of an input signal wavelength (?s) and an offset wavelength (?c) proximate the input signal wavelength (?s) to provide thereby non-linear amplification of input signal (?s).

Abstract: Disclosed is a method of doping an oxide. The example method includes forming at least one of an AlGaAs oxide or an InAlP oxide on a GaAs substrate, and incorporating Erbium into the at least one AlGaAs oxide or InAlP oxide via ion implantation to form an Erbium-doped oxide layer. The example method also includes annealing the substrate and the at least one AlGaAs oxide or InAlP oxide.

Abstract: An integrated device is disclosed which has a substrate and a Rare-Earth Doped Semiconductor layer (REDS layer) integrated with the substrate. The REDS layer is patterned to define one or more optically amplifying structures each having a first I/O port for receiving or outputting a first optical signal, and at least one pump energy receiving port for receiving pumping energy in the form of at least one of electrical pump energy and/or optical pump energy. In one particular set of embodiments, at least one of the optical amplifying structures is a Raman type amplifier where a corresponding pump energy receiving port is structured for receiving Raman type pumping energy having an effective frequency which is about one optical phonon frequency higher than a signal frequency of an optical signal supplied at a corresponding I/O port.

Abstract: The method of isolating faults internal to, for example, from tonic integrated circuits by diverting a portion of certain input and output signals to integrated photo detectors. By analyzing the admitted optical signal in each of plural photo detectors, falls within the circuit can be isolated.

Abstract: A wavelength converter for binary optical signals includes an interferometer structure (110) for generating an output signal by modulating a received local signal (LS) according to the modulation of a fUrther received first input signal (IS 1). When such interferometer structures (110) are operated in a standard mode it is known in the art to control the power of the input signal such that the extinction ratio of the output signal is kept minimal. The invention also controls the power of the input signals to achieve the minimal extinction ratio when the wavelength converter and in particular the interferometer structure (110) is operated in a differential mode receiving two input signals.

Abstract: A wavelength conversion system includes a Mach-Zehnder interferometer including two optical waveguides, a non-linear medium provided on one of the two optical waveguides, and a branching ratio adjuster for adjusting the branching ratio of multiplexed light produced by multiplexing signal light and pumping light so that the powers of the signal light and the pumping light which are to be emitted from the two optical waveguides are equal to each other. The multiplexed light whose branching ratio is adjusted by the branching ratio adjuster is introduced into the two optical waveguides such that the non-linear medium generates phase conjugation light of the signal light and the light guided through the one optical waveguide and the light guided through the other one of the two optical waveguides interfere with each other so that the phase conjugation light is extracted as wavelength conversion light.

Abstract: A semiconductor optical amplification module that can suppress ringing without increasing power consumption or circuit size or inhibiting high-speed operation. A semiconductor optical amplifier outputs an optical signal inputted according to driving current outputted from a drive circuit. A diode is connected in parallel with the semiconductor optical amplifier. As a result, it becomes possible to suppress ringing without connecting a large resistor to the drive circuit.

Abstract: A method of bonding a compound semiconductor on a silicon waveguide is used for attaining a laser above a silicon substrate. While it is essential to attain laser oscillation by injection of a current, since amorphous is formed at the bonding surface of a silicon compound semiconductor, it is difficult to directly inject the current through the silicon waveguide to the compound semiconductor. Further, even when an electrode is formed near the waveguide and the current is injected, since the current is not injected near the silicon waveguide, laser oscillation through the silicon waveguide can not be attained. The problem is solved by forming a structure of laterally injecting a current to the silicon waveguide and concentrating the current near the silicon waveguide in a compound semiconductor.

Abstract: A method and apparatus is described that use an index-of-refraction profile having a significant central dip in refractive index (or another tailored index profile) within the core of a gain fiber or a gain waveguide on a substrate. The benefits of this central dip (more power with a given mode structure) are apparent when an input beam is akin to that of a Gaussian mode. In some embodiments, the invention provides a fiber or a substrate waveguide having an index profile with a central dip, but wherein the device has no doping. Some embodiments use a central dip surrounded by a higher-index ring in the index of refraction of the core of the fiber, while other embodiments use a trench between an intermediate-index central core portion and the ring, or use a plurality of rings and/or trenches. Some embodiments use an absorber in at least one core ring.

Abstract: An optical 1-bit comparator has at least two inputs for receiving a respective first input signal A and a second input signal B, each comprising a single bit word, and at least three outputs, each of the three outputs providing a respective solution to the logical expressions: A>B, A<B and A=B, characterised in that each logical expression is obtained using at least one semiconductor optical amplifier (SOA) capable of providing cross gain modulation. Preferably the complete circuit requires only 3 identical SOAs to provide the three logical outputs, each operating with cross gain modulation.