Abstract: A semiconductor device includes an active region disposed in a semiconductor substrate and an uppermost metal level including metal lines, where the uppermost metal level is disposed over the semiconductor substrate. Contact pads are disposed at a major surface of the semiconductor device, where the contact pads are coupled to the metal lines in the uppermost metal level. An isolation region separates the contact pads disposed at the major surface. Adjacent contact pads are electrically isolated from one another by a portion of the isolation region. Reflective structures are disposed between the upper metal level and the contact pads, where each of the reflective structures that is directly over the active region completely overlaps an associated portion of the isolation region separating the contact pad.
Type:
Grant
Filed:
June 6, 2017
Date of Patent:
May 8, 2018
Assignee:
INFINEON TECHNOLOGIES AG
Inventors:
Dietrich Bonart, Bernhard Weidgans, Johann Gatterbauer, Thomas Gross, Martina Heigl
Abstract: A semiconductor device includes an active region disposed in a semiconductor substrate and an uppermost metal level including metal lines, where the uppermost metal level is disposed over the semiconductor substrate. Contact pads are disposed at a major surface of the semiconductor device, where the contact pads are coupled to the metal lines in the uppermost metal level. An isolation region separates the contact pads disposed at the major surface. Adjacent contact pads are electrically isolated from one another by a portion of the isolation region. Reflective structures are disposed between the upper metal level and the contact pads, where each of the reflective structures that is directly over the active region completely overlaps an associated portion of the isolation region separating the contact pad.
Type:
Grant
Filed:
November 18, 2015
Date of Patent:
July 11, 2017
Assignee:
Infineon Technologies AG
Inventors:
Dietrich Bonart, Bernhard Weidgans, Johann Gatterbauer, Thomas Gross, Martina Heigl