Abstract: A three terminal magnetic sensing device (TTM) having a trackwidth defined in a localized region by a patterned insulator, and methods of making the same, are disclosed. In one illustrative example, one or more first sensor layers (e.g. which includes a “base” layer) are formed over a collector substrate. A patterned insulator which defines a central opening exposing a top layer of the one or more first sensor layers is then formed. The central opening has a width for defining a trackwidth (TW) of the TTM. Next, one or more second sensor layers are formed over the top layer of the one or more first sensor layers through the central opening of the patterned insulator. The one or more second sensor layers may include a tunnel barrier layer formed in contact with the top layer of the one or more first sensor layers, as well as an “emitter” layer. Various embodiments and techniques are provided.

Abstract: A current to perpendicular to plane (CPP) differential magnetoresistance (DMR) read head using current confinement proximal to an air bearing surface (ABS) is disclosed. The CPP DMR read head includes a first electrically conductive lead, a first MR sensor formed on the first lead, and a non-magnetic electrically conductive spacer formed on the first MR sensor proximate to the ABS. The CPP DMR read head further includes insulating material on the first MR sensor distal to the ABS. A second MR sensor is formed in contact with the conductive spacer such that the second MR sensor is in electrical contact with the first MR sensor proximate to the ABS and is electrically isolated from the first MR sensor distal to the ABS. A second electrically conductive lead is in contact with the second MR sensor. Sense current injected into the first and the second MR sensor is confined proximate to the ABS.

Abstract: The device comprises two magnetoresistive elements (10, 20) placed relative to each other in magnetostatic interaction in such a manner that a magnetic flux passing between these elements (10, 20) closes through soft ferromagnetic layers (26, 27) of said elements (10, 20). A write device (15) is associated with the elements (10, 20) to control the magnetization of each soft layer (26, 27). A read conductor line (11, 12, 13, 14) is associated with each magnetoresistive element (10, 20) to detect the magnetic state of the soft layer (26, 27) by measuring the corresponding magnetoresistance. The soft ferromagnetic layers (26, 27) of the elements (10, 20) remain oriented substantially in antiparallel relative to each other, while the hard ferromagnetic layers (24) of said elements (10, 20) are oriented substantially in parallel.

Abstract: A method for testing an MR element includes a step of obtaining a ferromagnetic resonance frequency f0 of the MR element to be tested by applying an external magnetic field in a track-width direction to the MR element, a step of calculating a stiffness magnetic field Hstiff from the obtained ferromagnetic resonance frequency f0 using a predetermined formula, a step of obtaining a relationship of a stiffness magnetic field Hstiff with respect to an external magnetic field applied in the track-width direction from the applied external magnetic field and the calculated stiffness magnetic field Hstiff, a step of obtaining a uniaxial anisotropic magnetic field Hk of a free layer of the MR element from the obtained relationship of the stiffness magnetic field Hstiff with respect to the external magnetic field applied, and a step of judging whether the MR element is good product or not by comparing the obtained uniaxial anisotropic magnetic field Hk with a predetermined threshold.

Abstract: The thin-film patterning method for a magnetoresistive device comprises forming a functional layer on a substrate; forming a first mask layer above the functional layer; forming a patterned resist on the first mask layer; etching the first mask layer by using the resist; removing the resist; forming a second mask layer by atomic layer deposition, the second mask layer covering a step defined by an edge of the first mask layer; dry-etching the second mask layer in a thickness direction of the substrate so as to leave the second mask layer on a side face of the step; removing the first mask layer so as to expose the functional layer under the first mask; and dry-etching the functional layer by using the second mask layer.

Abstract: A differential giant magnetoresistive sensor for sensing a magnetic signal. The differential sensor has a structure configured to minimize spin torque noise. The differential magnetoresistive sensor includes first and second magnetoresistive sensor elements and a three lead structure including an inner lead sandwiched between the first and second sensor elements and first and second outer leads. each of the sensor elements includes an antiparallel coupled free layer structure with the free layer of each of the sensor elements preferably being positioned near the inner lead. The three lead structure allows sense current to be supplied to the sensor such that electrons travel first through the free layer of each sensor element and then through the pinned layer structure.

Abstract: A magnetic memory device includes a magnetoresistive element and a first wiring layer. The magnetoresistive element includes a fixed layer, a recording layer, and a non-magnetic layer interposed therebetween. The first wiring layer extends in a first direction and generates a magnetic field for recording data in the magnetoresistive element. The recording layer includes a base portion extending in a second direction rotated from the first direction by an angle falling within a range of more than 0° to not more than 20°, and first and second projections projecting from the first and second sides of the base portion in a third direction perpendicular to the second direction. The third and fourth sides of the base portion are inclined with respect to the third direction in the same rotational direction as a rotational direction in which the second direction is rotated.

Abstract: A magnetic sensor includes a single substrate, a conventional GMR element formed of a spin-valve film including a single-layer-pinned fixed magnetization layer, and a SAF element formed of a synthetic spin-valve film including a plural-layer-pinned fixed magnetization layer. When the spin-valve film intended to act as the conventional GMR element and the synthetic spin-valve film intended to act as the SAF element are subjected to the application of a magnetic field oriented in a single direction at a high temperature, they become giant magnetoresistive elements whose magnetic-field-detecting directions are antiparallel to each other. Since films intended to act as the conventional GMR element and the SAF element can be disposed close to each other, the magnetic sensor which has giant magnetoresistive elements whose magnetic-field-detecting directions are antiparallel to each other can be small.

Abstract: A magnetic random access memory structure comprising an anti-ferromagnetic layer structure, a crystalline ferromagnetic structure physically coupled to the anti-ferromagnetic layer structure and a ferromagnetic free layer structure physically coupled to the crystalline ferromagnetic structure.

Abstract: A method includes: fabricating a wafer having a plurality of layers, each including a feature of interest and a lapping guide positioned at a known location relative to the feature of interest, wherein the feature of interest and the lapping guide cross a common plane; lapping the wafer to the common plane to expose portions of the lapping guides; and measuring dimensions of the lapping guides and an offset of the lapping guides with respect to each other. An apparatus constructed using the method is also included.

Abstract: Current-perpendicular-to-plane (CPP) read sensors for magnetic heads having constrained current paths made of lithographically-defined conductive vias, and methods of making the same, are disclosed. In one example, a sensor stack structure which includes an electrically conductive spacer layer is formed over a first shield layer. An insulator layer is deposited over and adjacent the spacer layer, and a resist structure which exposes one or more portions of the insulator layer is formed over the insulator layer. With the resist structure in place, the exposed insulator layer portions are removed by etching to form one or more apertures through the insulator layer down to the spacer layer. Electrically conductive materials are subsequently deposited within the one or more apertures to form one or more lithographically-defined conductive vias of a current-constraining structure.

Abstract: A method for constructing a magnetoresistive sensor using an etch mask that is resistant to the material removal process used to define the sensor width and stripe height. The method may include the use of a Ta etch mask formed under a photoresist mask, and the use of an ion milling process to define the sensor. The etch mask remains substantially intact after performing the ion milling and therefore is readily removed by a later CMP process. The etch mask layer is also very resistant to high temperatures such as those used in a desired atomic layer deposition of alumina, which is used to deposit conformal layers of alumina around the sensor.

Abstract: A magnetic head includes a plurality of generally laterally positioned readers, each reader having a sensor, a lower shield below the sensor, an upper shield above the sensor, and a gap defined between the shields. At least one of the readers has a thicker gap than another of the readers. Methods for making such heads are also presented.

Abstract: A magnetic detection element capable of maintaining the ?RA at a high level and reducing the magnetostriction by improving a material for a free magnetic layer, as well as a method for manufacturing the same, is provided. The free magnetic layer includes a laminate composed of a CoMnX alloy layer formed from a metal compound represented by a compositional formula CoaMnbXc (where X represents at least one of Ge, Ga, In, Si, Pb, Zn, and Sb and a+b+c=100 atomic percent) and a CoMnZ alloy layer formed from a metal compound represented by a compositional formula CodMneZf (where Z represents at least one of Sn and Al and d+e+f=100 atomic percent). In this manner, the magnetostriction of the free magnetic layer can be reduced.

Abstract: A method for providing a self-pinned differential GMR sensor and self-pinned differential GMR sensor. The differential GMR head includes two self-pinned GMR sensors separated by a gap layer. The gap layer may act as a bias structure to provide antiparallel magnetizations for the first and second free layers without using an antiferromagnetic layer. The gap layer may include four NiFe ferromagnetic layers separated with three interlayers. The gap may also be formed to include a structure defined by Ta/Al2O3/NiFeCr/CuOx. One of the pinned layer may include three ferromagnetic layers so that the top ferromagnetic layer of the bottom pinned layer and the bottom ferromagnetic layer of the bottom pinned layer have a magnetization 180° out of phase. The self-pinned GMR sensors may include synthetic free layers that includes a first free sublayer, an interlayer and a second free sublayer that are biased 180° out of phase.

Abstract: The invention is devised to provide a method of manufacturing a thin film magnetic head including a magnetoresistive element having higher reading performance. In manufacturing the thin film magnetic head, after forming an MR element 15, a pair of magnetic domain controlling layers 16 are formed by stacking a buffer layer 161, a magnetic bias layer 162 and a cap layer 163 in this order on both sides, in a track-width direction, of the MR element 15 via an insulating layer 14 respectively. Then, a cap layer 17 is formed so as to cover the upper surface of the MR element 15 and connect the pair of cap-layers 163. After that, a gap adjustment layer 18 and a top shielding layer 19 are formed in order so as to cover the pair of cap layers 163 and the cap layer 17, thereby a read head section 10 is completed.

Abstract: A current to perpendicular to plane (CPP) differential magnetoresistance (DMR) read head using current confinement proximal to an air bearing surface (ABS) is disclosed. The CPP DMR read head includes a first electrically conductive lead, a first MR sensor formed on the first lead, and a non-magnetic electrically conductive spacer formed on the first MR sensor proximate to the ABS. The CPP DMR read head further includes insulating material on the first MR sensor distal to the ABS. A second MR sensor is formed in contact with the conductive spacer such that the second MR sensor is in electrical contact with the first MR sensor proximate to the ABS and is electrically isolated from the first MR sensor distal to the ABS. A second electrically conductive lead is in contact with the second MR sensor. Sense current injected into the first and the second MR sensor is confined proximate to the ABS.

Abstract: A current perpendicular to plane dual giant magnetoresistive sensor (dual CPP GMR sensor) that prevents spin torque noise while having high dR/R performance. The sensor has a design that maximizes the GMR effect (dR/R) by providing a pinned layer structure that maximizes the positive GMR contribution of the AP2 layer (or magnetic layer closest to the spacer layer) while minimizing the negative GMR contribution of the AP1 layer. The pinned layer structure includes an AP1 layer that includes a thin CoFe layer that is exchange coupled with an IrMn or IrMnCr AFM layer and has two or more Co layers with a spin blocking layer sandwiched between them. The use of the Co layers and the spin blocking layer in the AP1 layer minimizes the negative contribution of the AP1 layer. The AP2 layer has a plurality of CoFe layers with nano-layers such as Cu sandwiched between the CoFe layers.

Abstract: In manufacturing the thin film magnetic head, the rear end face of the MR element and the rear end face of a resistive film pattern are determined with high precision using a mask pattern, in which a first opening and a second opening are collectively formed. The first and second openings are located side by side in a track-width direction. The first opening includes a first edge extending across the MR film in the track-width direction, and the second opening includes a second edge located at a given interval, as measured in a direction orthogonal to the track-width direction, from the first edge, and extending in the track-width direction. In the step of polishing for forming a magnetic-recording-medium-facing-surface, the amount of polishing is determined by monitoring the resistance change of the resistive film pattern, thereby reducing the dimension errors in the MR height when manufacturing the MR element.

Abstract: Dual-type tunneling magnetoresistance (TMR) elements and associated methods of fabrication are disclosed that allow for higher bias voltages. In one embodiment, the dual-type TMR element includes a lower pinned layer structure, a lower tunnel barrier layer, a ferromagnetic free layer structure, an upper tunnel barrier layer, and an upper pinned layer structure. The lower pinned layer structure has a first Fermi level, while the upper pinned layer structure has a second Fermi level that is different than the first Fermi level of the lower pinned layer structure. By having different Fermi levels, the bias voltage induced in the TMR element may advantageously be increased without a significant reduction in TMR.

Abstract: A magnetic recording and reproducing apparatus with a thin-film magnetic head having microwave magnetic exciting function, includes a metal housing, a magnetic recording medium, arranged in the metal housing, having a magnetic recording layer, and a thin-film magnetic head, arranged in the metal housing, having a write magnetic field production unit and a resonance magnetic field production unit. The write magnetic field production unit produces, in response to a write signal, a write magnetic field to be applied into the magnetic recording layer, and the resonance magnetic field production unit produces, in response to a microwave excitation signal, a resonance magnetic field with a frequency equal to or in a range near a ferromagnetic resonance frequency FR of a the magnetic recording layer.

Abstract: Magnetoresistive device comprising a spin valve formed from a stack of layers including at least two magnetic layers for which a relative orientation of their magnetisation directions are capable varying under influence of a magnetic field; at least one discontinuous dielectric or semiconducting layer with electrically conducting bridges at least partially passing through a thickness of the dielectric or semiconducting layer, the bridges configured to locally concentrate current that passes transversely through the stack; and means for circulating a current in the spin valve transverse to the plane of the layers, characterised in that the dielectric or semiconducting layer with electrically conducting bridges is arranged inside one of the magnetic layers.

Abstract: A magnetoresistive sensor having employing a Mn containing Huesler alloy for improved magnetoresistive performance in a structure that minimizes corrosion and Mn migration. The sensor can be constructed with a pinned layer structure that includes a lamination of layers of Co2MnX and CoFe, where X is Al, Ge or Si. The Co2MnX can be sandwiched between the layers of CoFe to prevent Mn migration into the spacer/barrier layer. The free layer can also be constructed as a lamination of Co2MnX and CoFe layers, and may also be constructed so that the Co2MnX layer is sandwiched between CoFe layers to prevent Mn migration.

Abstract: A fabrication process and apparatus provide a high-performance magnetic field sensor (200) from two differential sensor configurations (201, 211) which require only two distinct pinning axes (206, 216) which are formed from a single reference layer (60) that is etched into high aspect ratio shapes (62, 63) with their long axes drawn with different orientations so that, upon treating the reference layers with a properly aligned saturating field (90) and then removing the saturating field, the high aspect ratio patterns provide a shape anisotropy that forces the magnetization of each patterned shape (62, 63) to relax along its respective desired axis. Upon heating and cooling, the ferromagnetic film is pinned in the different desired directions.

Abstract: A magnetic structure includes a first magnetic layer, a nonmagnetic insulating layer, a nonmagnetic adhesion layer disposed on the top surfaces of the first magnetic layer and the nonmagnetic insulating layer, and a second magnetic layer disposed on the nonmagnetic adhesion layer. The nonmagnetic insulating layer contains an oxygen atom. The nonmagnetic adhesion layer is composed of one element or a plurality of elements selected from the group consisting of Al, Si and nonmagnetic transition metal elements except Ru, and the bond enthalpy of a diatomic molecule composed of an atom of the one element or each of the plurality of elements and an oxygen atom is 400 kJ/mol or higher. The nonmagnetic adhesion layer has a thickness within a range of 0.3 to 0.8 nm. The first magnetic layer and the second magnetic layer are ferromagnetically coupled to each other.

Abstract: Methods and apparatus provide magnetoresistance sensors. A tunneling magnetoresistance (TMR) sensor may include configurations that are arranged as a top TMR stack. One of two antiparallel layers of pinned layers within the TMR stack may be subdivided by a spacer layer. Tantalum may form the spacer layer that is inserted in a reference layer, which is one of the pinned layers and is located between a barrier layer and an antiparallel coupling layer that enables antiparallel coupling between the reference layer and a keeper layer of the pinned layers. The barrier layer deposited on a free layer of the TMR stacks separates the pinned layers from the free layer such that TMR effects are detectable with the sensors.

Abstract: Provided is a thin-film magnetic head, in which the magnetic spacing can be controlled appropriately, regardless of the presence of the variation in height of the medium-opposed surface of the closure. The thin-film magnetic head comprises: at least one head element formed on or above an element-formation surface of a substrate, for reading data from a magnetic recording medium and/or writing data to a magnetic recording medium; an overcoat layer formed on the element-formation surface so as to cover the at least one head element; and at least one closure adhered to at least a portion of an upper surface of the overcoat layer. Here, at least one of the at least one closure comprises at least one height-adjusting means for adjusting the height of a medium-opposed surface of the closure. The height-adjusting means is preferably a heating means provided within the closure.

Abstract: A magnetoresistance effect element comprises: a magnetoresistive stack including: first, second and third magnetic layers whose magnetization directions change in accordance with an external magnetic field, said second magnetic layer being located between said first magnetic layer and the third magnetic layer; a first non-magnetic intermediate layer sandwiched between said first and second magnetic layers, said first non-magnetic intermediate layer allowing said first magnetic layer and said second magnetic layer to be exchange-coupled such that the magnetization directions thereof are anti-parallel to each other when no magnetic field is applied; and a second non-magnetic intermediate layer sandwiched between said second and third magnetic layers, said second non-magnetic intermediate layer producing a magnetoresistance effect between said second magnetic layer and said third magnetic layer; wherein sense current is adapted to flow in a direction perpendicular to a film plane; a bias magnetic layer provided

Abstract: A magnetoresistive element has a ferromagnetic double tunnel junction having a stacked structure of a first antiferromagnetic layer/a first ferromagnetic layer/a first dielectric layer/a second ferromagnetic layer/a second dielectric layer/a third ferromagnetic layer/a second antiferromagnetic layer. The second ferromagnetic layer that is a free layer consists of a Co-based alloy or a three-layered film of a Co-based alloy/a Ni—Fe alloy/a Co-based alloy. A tunnel current is flowed between the first ferromagnetic layer and the third ferromagnetic layer.

Abstract: A method is presented for fabrication of a tape medium read head having a unitary formation of multiple elements for reading multi-track data from a magnetic tape. The method includes providing a continuous substrate layer, and forming a sensor material layer on the continuous substrate layer. Photoresist material is deposited on the sensor material layer, and is patterned to form masks which provide protected areas and exposed areas of the sensor material layer. Exposed areas of the sensor material layer are shaped to form sensors from the protected areas of the sensor material layer. Electrical lead materials are deposited between and adjacent to the sensors, and the masks are removed.

Abstract: A method and apparatus for providing a magnetic read sensor having a thin pinning layer and improved magnetoresistive coefficient ?R/R is disclosed. A thin IrMn alloy pinning layer is disposed adjacent a composite pinned layer, wherein the percentage of iron in the pinned layer adjacent the thin IrMn alloy pinning layer in the range of 20-40% to provide maximum pinning and the thicknesses of the outer ferromagnetic layers should be comparable.

Abstract: A multi-channel tape recording head or apparatus that has cable connection pads aligned along a direction that runs substantially perpendicular to a multi-channel tape recording head actuation direction, which allows a ribbon-type external cable, connected to the cable connection pads, to bend in its most flexible direction when the multi-channel tape recording head moves.

Abstract: A magnetoresistance effect element comprises a magnetoresistance effect film and a pair of electrode. The magnetoresistance effect film having a first magnetic layer whose direction of magnetization is substantially pinned in one direction; a second magnetic layer whose direction of magnetization changes in response to an external magnetic field; a nonmagnetic intermediate layer located between the first and second magnetic layers; and a film provided in the first magnetic layer, in the second magnetic layer, at a interface between the first magnetic layer and the nonmagnetic intermediate layer, and/or at a interface between the second magnetic layer and the nonmagnetic intermediate layer, the film having a thickness not larger than 3 nanometers, and the film has as least one selected from the group consisting of oxide, nitride, oxinitride, phosphide, and fluoride.

Abstract: Magnetic or magnetoresistive tunnel junctions (MTJs) having diffusion stop layers to eliminate or reduce diffusion of oxygen, nitrogen or other particles from the barrier layer to the ferromagnetic layers during the film deposition process including the barrier oxidation or nitridation process and the post annealing process. Such MTJs may be used in various applications including magnetic memory (MRAM) devices and magnetic recording heads.

Abstract: The invention provides a magnetoresistive device of the CPP (current perpendicular to plane) structure, comprising a magnetoresistive unit, and a first shield layer and a second shield layer which are located and formed such that the magnetoresistive unit is sandwiched between them from above and below, with a sense current applied in the stacking direction, wherein said magnetoresistive unit comprises a non-magnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed such that said nonmagnetic intermediate layer is sandwiched between them.

Abstract: A Lorentz Magnetoresistive sensor having an ultrathin trapping layer disposed between a quantum well structure and a surface of the sensor. The trapping layer prevents charge carriers from the surface of the sensor from affecting the quantum well structure. This allows the quantum well structure to be formed much closer to the surface of the sensor, and therefore, much closer to the magnetic field source, greatly improving sensor performance. A Lorentz Magnetoresistive sensor having a top gate electrode to hinder surface charge carriers diffusing into the quantum well, said top gate electrode being either a highly conductive ultrathin patterned metal layer or a patterned monoatomic layer of graphene.

Abstract: A magnetoresistive device of a CPP (current perpendicular to plane) structure includes a magnetoresistive unit sandwiched between a first substantially soft magnetic shield layer from below, and a second substantially soft magnetic shield layer from above, with a sense current applied in a stacking direction. The magnetoresistive unit includes a non-magnetic intermediate layer sandwiched between a first ferromagnetic layer, and a second ferromagnetic layer. At least one of the first and second shield layers is configured in a window frame of a planar shape, including a front frame-constituting portion and a back frame-constituting portion partially comprising a combination of a nonmagnetic gap layer with a bias magnetic field-applying layer. The combination of the nonmagnetic gap layer with the bias magnetic field-applying layer forms a closed magnetic path with magnetic flux going all the way around the window framework, turning the magnetization of the front frame-constituting portion into a single domain.

Abstract: An extraordinary magnetoresistive sensor (EMR sensor) having a lead structure that is self aligned with a magnetic shunt structure. To form an EMR sensor according to an embodiment of the invention, a plurality of layers are deposited to form quantum well structure such as a two dimensional electron gas structure (2DEG). A first mask structure is deposited having two openings, and a material removal process is performed to remove portions of the sensor material from areas exposed by the openings. The distance between the two openings in the first mask defines a distance between a set of leads and the shunt structure. A non-magnetic metal is then deposited. A second mask structure is then formed to define shape of the leads.

Abstract: The invention provides a magnetoresistive device with the CPP (current perpendicular to plane) structure, comprising a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed with said nonmagnetic intermediate layer interposed between them, with a sense current applied in the stacking direction, wherein each of said first and second ferromagnetic layers comprises a sensor area joining to the nonmagnetic intermediate layer near a medium opposite plane and a magnetization direction control area that extends further rearward (toward the depth side) from the position of the rear end of said nonmagnetic intermediate layer; a magnetization direction control multilayer arrangement is interposed at an area where the magnetization direction control area for said first ferromagnetic layer is opposite to the magnetization direction control area for said second ferromagnetic layer in such a way that the magnetizations of the said first and second ferromagnetic l

Abstract: A magnetic sensor includes a reference layer having a first magnetization direction and a free layer assembly having an effective magnetization direction substantially perpendicular to the first magnetization direction and substantially perpendicular to a plane of each layer of the free layer assembly. A spacer layer is between the reference layer and the free layer, and a signal enhancement layer is exchange coupled to the free layer assembly on a side opposite the spacer layer.

Abstract: Provided is a thin-film magnetic head that can be adequately contacted with the magnetic recording medium, and thus, can perform read and write operations sufficiently and stably. This head comprises: at least one magnetic head element for reading and/or writing data, formed on/above an element formation surface of a substrate; an overcoat layer formed so as to cover the at least one magnetic head element; and a closure adhered on at least a portion of an upper surface of the overcoat layer, wherein a groove, extending in a track width direction, is provided on a medium-opposed surface: in an area on an end surface of the substrate, the area being on a boundary between the substrate and the overcoat layer; or in an area covering end surface portions of the substrate and the overcoat layer, the area thus overlapping the boundary between the substrate and the overcoat layer.

Abstract: The invention provides a method for fixing up the deterioration of a magneto-resistive effect device. A hard disk system is provided in it with a head heating means for heating a thin-film magnetic head, and by that head heating means, a defective site of the magneto-resistive effect device, which occurs as the hard disk system is in operation and is confined in a quasi-stable state, is fixed up in such a way as to return back to its own normal stable state. Thus, the deteriorated site of the magneto-resistive effect device (reproducing device) in the thin-film magnetic head, which is caused by the so-called thermal asperity as the hard disk system is in operation, is fixed up while it remains built in the hard disk system, i.e., without dismantling the hard disk system.

Abstract: A three terminal magnetic sensing device (TTM) having a trackwidth defined in a localized region by a patterned insulator, and methods of making the same, are disclosed. In one illustrative example, one or more first sensor layers (e.g. which includes a “base” layer) are formed over a collector substrate. A patterned insulator which defines a central opening exposing a top layer of the one or more first sensor layers is then formed. The central opening has a width for defining a trackwidth (TW) of the TTM. Next, one or more second sensor layers are formed over the top layer of the one or more first sensor layers through the central opening of the patterned insulator. The one or more second sensor layers may include a tunnel barrier layer formed in contact with the top layer of the one or more first sensor layers, as well as an “emitter” layer. Various embodiments and techniques are provided.

Abstract: A “scissoring-type” current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with dual ferromagnetic sensing or free layers separated by a nonmagnetic spacer layer has improved stability as a result of etch-induced uniaxial magnetic anisotropy in each of the free layers. Each of the two ferromagnetic free layers has an etch-induced uniaxial magnetic anisotropy and an in-plane magnetic moment substantially parallel to its uniaxial anisotropy in the quiescent state, i.e., the absence of an applied magnetic field. The etch-induced uniaxial anisotropy of each of the free layers is achieved either by direct ion etching of each of the free layers, and/or by ion etching of the layer on which each of the free layers is deposited. A strong magnetic anisotropy is induced in the free layers by the etching, which favors generally orthogonal orientation of the two free layers in the quiescent state.

Abstract: The device comprises two magnetoresistive elements (10, 20) placed relative to each other in magnetostatic interaction in such a manner that a magnetic flux passing between these elements (10, 20) closes through soft ferromagnetic layers (26, 27) of said elements (10, 20). A write device (15) is associated with the elements (10, 20) to control the magnetization of each soft layer (26, 27). A read conductor line (11, 12, 13, 14) is associated with each magnetoresistive element (10, 20) to detect the magnetic state of the soft layer (26, 27) by measuring the corresponding magnetoresistance. The soft ferromagnetic layers (26, 27) of the elements (10, 20) remain oriented substantially in antiparallel relative to each other, while the hard ferromagnetic layers (24) of said elements (10, 20) are oriented substantially in parallel.

Abstract: A magnetic recording medium and a method of manufacturing the magnetic recording medium are provided. In order to increase the recording density of the magnetic recording medium, the magnetic recording medium is configured to multiple magnetic layers by consecutively forming a first magnetic layer having a thin film shape and a second magnetic layer comprising patterned magnetic bits. The first magnetic layer has a magnetic anisotropic coefficient greater than that of the second magnetic layer.

Abstract: A magnetic write head for perpendicular magnetic data recording having a write pole that is sandwiched between first and second magnetic shaping layers. The split shaping layers allow a laminated shaping layer structure allows a manufacturable laminated shaping layer to be constructed for improved data rate. One of the magnetic shaping layers can be formed as a laminated structure while that other can be a single layer of electroplated magnetic material. The shaping layers can be separated from the write pole by a thin layer of non-magnetic material to form a laminated interface between the write pole and the shaping layers. These features reduce magnetic domains and also reduce eddy currents which advantageously improves data rate.

Abstract: The invention provides a magneto-resistive effect device of the CPP structure comprising a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked together and formed with the nonmagnetic intermediate layer sandwiched between them. The first ferromagnetic layer and the second ferromagnetic layer are magnetically coupled via the nonmagnetic intermediate layer such that the magnetizations of the first ferromagnetic layer and the second ferromagnetic layer are antiparallel with each other, wherein the mutually antiparallel magnetizations of two magnetic layers lie in a medium opposite plane or front to rear direction and in a rear to front direction.

Abstract: A magnetoresistive (MR) read head based on the spin accumulation effect has no electrical terminal and associated insulating layer in the read gap. The spin-accumulation type MR read head has an electrically conductive strip located on an insulating layer on the lower magnetic shield with a first end at the sensing end of the head and a second end at the back end of the head recessed from the sensing end. At the sensing end of the head, the upper magnetic shield is located on the free layer without an insulating layer. A resistance-detection circuit is electrically coupled to the upper shield and the lower shield at the back end of the head. At the back end of the head, an electrical terminal is located on the fixed layer and electrically insulated from the upper shield and a current-supply circuit is electrically coupled to the terminal and the lower shield.

Abstract: The present invention provides a magnetic recording medium having superior startup operation and durability as well as satisfactory surface lubricity. The present invention relates to a method of manufacturing a magnetic recording medium in which at least a magnetic layer, a protective film layer and a lubricant layer are sequentially laminated on a non-magnetic substrate, wherein the lubricant layer is surface treated using a gas activated by plasma generated at a pressure in the vicinity of atmospheric pressure. The present invention also relates to a magnetic recording medium produced according to the aforementioned manufacturing method.