Abstract: A magnetoresistive element has a first magnetic layer and a second magnetic layer separate from each other, the first magnetic layer and the second magnetic layer each having a magnetization whose direction is substantially pinned, and a non-magnetic conductive layer formed in contact with the first magnetic layer and the second magnetic layer and electrically connecting the first and second magnetic layers, the non-magnetic conductive layer forming a path of spin-polarized electrons from one of the magnetic layer to the other magnetic layer, the non-magnetic conductive layer comprising a portion located between the first magnetic layer and the second magnetic layer, the portion being a sensing area.

Abstract: A current perpendicular to plane (CPP) giant magnetoresistive (GMR) sensor having two dual spin valves sharing a common self pinned pinned layer.

Abstract: An MR element includes an MR stack including a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer disposed between the first and the second ferromagnetic layer. The MR stack has an outer surface, and the spacer layer has a periphery located in the outer surface of the MR stack. The magnetoresistive element further includes a layered film that touches the periphery of the spacer layer. The spacer layer includes a semiconductor layer formed using an oxide semiconductor as a material. The layered film includes a first layer, a second layer, and a third layer stacked in this order. The first layer is formed of the same material as the semiconductor layer, and touches the periphery of the spacer layer. The second layer is a metal layer that forms a Schottky barrier at the interface between the first layer and the second layer. The third layer is an insulating layer.

Abstract: A differential giant magnetoresistive sensor for sensing a magnetic signal. The differential sensor has a structure configured to minimize spin torque noise. The differential magnetoresistive sensor includes first and second magnetoresistive sensor elements and a three lead structure including an inner lead sandwiched between the first and second sensor elements and first and second outer leads. each of the sensor elements includes an antiparallel coupled free layer structure with the free layer of each of the sensor elements preferably being positioned near the inner lead. The three lead structure allows sense current to be supplied to the sensor such that electrons travel first through the free layer of each sensor element and then through the pinned layer structure.

Abstract: The invention provides a thin-film magnetic head having a magneto-resistive effect device of the CPP (current perpendicular to plane) structure comprising a multilayer film in which a fixed magnetization layer, a nonmagnetic layer and a free layer are stacked together in order. The fixed magnetization layer, nonmagnetic layer and free layer extend rearward from an air bearing surface that is a plane in opposition to a medium, the length of the depth-wise side of the fixed magnetization layer is longer than that of the free layer, and a shunt layer for shunting a sense current is formed more on the depth-wise side of, and kept constantly away from, the free layer. There are thus much more favorable advantages obtained: even when device size is further reduced and narrowed, degradation of frequency characteristics is hold back, any increase in the thermal magnetic noise is stayed off, and performance fluctuations are minimized.

Abstract: A magnetic device including a magnetic element is described. The magnetic element includes a fixed layer having a fixed layer magnetization, a spacer layer that is nonmagnetic, and a free layer having a free layer magnetization. The free layer is changeable due to spin transfer when a write current above a threshold is passed through the first free layer.

Abstract: A magnetic head assembly of the present invention includes a head rail having a plurality of head element portions each including a MR element and sliding portions that come into contact with a magnetic tape, and a protective film on a magnetic tape sliding surface of the head element portions and the sliding portions, wherein the protective film is formed in a portion other than the vicinity of both ends of the head rail in a traveling direction, and an outermost surface of the protective film, on which a magnetic tape is capable of sliding, is formed flat. Thus, a magnetic head assembly used in a magnetic tape apparatus can be provided, in which an output does not decrease due to the abrasion deformation of the head element portions and the increase in spacing by the adhesion of stain.

Abstract: Magnetic thin film having high spin polarizability and a magnetoresistance effect device and a magnetic device using the same, provided with a substrate (2) and Co2MGa1-xAlx thin film (3) formed on the substrate (2), the Co2MGa1-xAlx thin film (3) has a L21 or B2 single phase structure, M of the thin film is either one or two or more of Ti, V, Mo, W, Cr, Mn, and Fe, an average valence electron concentration Z in M is 5.5?Z?7.5, and 0?x?0.7, shows ferromagnetism at room temperature, and can attain high spin polarizability. A buffer layer (4) may be inserted between the substrate (2) and the Co2FexCr1-xAl thin film (3). The tunnel magnetoresistance effect device and the giant magnetoresistance effect device using this magnetic thin film can attain large TMR and GMR at room temperature under the low magnetic field.

Abstract: A magnetoresistive element has a first magnetic layer and a second magnetic layer separate from each other, the first magnetic layer and the second magnetic layer each having a magnetization whose direction is substantially pinned, and a non-magnetic conductive layer formed in contact with the first magnetic layer and the second magnetic layer and electrically connecting the first and second magnetic layers, the non-magnetic conductive layer forming a path of spin-polarized electrons from one of the magnetic layer to the other magnetic layer, the non-magnetic conductive layer comprising a portion located between the first magnetic layer and the second magnetic layer, the portion being a sensing area.

Abstract: In a perpendicular magnetic recording head comprising a main magnetic pole layer and a return yoke layer which have respective front end faces exposed at a surface opposing a recording medium and are laminated with a nonmagnetic material layer interposed therebetween on the medium-opposing surface, an end magnetization control layer for generating an exchange-coupling field is provided on the upper or lower side of both end parts in a track width direction of the return yoke layer. The exchange-coupling field fixes magnetization in the end parts to the track width direction.

Abstract: A noise-testing method for a thin-film magnetic head with an MR read head element and a heating unit capable of applying a heat and a stress to the MR read head element, includes a step of applying alternately and discontinuously with each other an electrical power having a first level and an electrical power having a second level higher than the first level to the heating unit, and a step of evaluating the thin-film magnetic head by measuring a noise output or noise outputs obtained from the MR read head element when the electrical power or the electrical powers are applied to the heating unit.

Abstract: In a perpendicular magnetic recording head having a main magnetic pole layer and a return yoke layer which are laminated with a magnetic gap layer interposed therebetween on a medium-opposing surface, a pair of side coils constituting respective electrically closed circuits on a surface parallel to the medium-opposing surface are provided on both sides in a track width direction of a magnetic pole part of the main magnetic pole layer. When a leakage magnetic field spreading from the magnetic pole part of the main magnetic pole layer passes through the pair of side coils, the pair of side coils generate a demagnetizing field in such a direction as to cancel a magnetic flux change thereof, thereby preventing the leakage magnetic flux from spreading.

Abstract: A thin-film magnetic head includes a first magnetic layer, a flat, spiral-shaped coil, a toroidal-shaped insulating layer covering the coil, and a second magnetic layer touching the insulating layer and disposed to sandwich part of the coil between itself and the first magnetic layer. The second magnetic layer has a recessed portion that enters a space inside the insulating layer. In the recessed portion, the bottom surface of the second magnetic layer includes a first flat portion a part of which touches the top surface of the first magnetic layer, while the top surface of the second magnetic layer includes a second flat portion located in the space and substantially parallel to the first flat portion. In a cross section that divides each of the first and second magnetic layers into two equal portions, the second flat portion is 0.

Abstract: A magnetoresistive sensor having a trilayer structure for improved pinning. The pinned layer is exchange coupled with a IrMnCr AFM layer, and has a three ferromagnetic layer, the center one comprising Co50Fe50 and V.

Abstract: A magnetic head fabrication process in which a stencil layer is deposited upon a plurality of sensor layers. A photoresist mask in the desired read track width is fabricated upon the stencil layer. A reactive ion milling step is then conducted to remove the unmasked portions of the stencil layer. Where the stencil layer is composed of an organic compound, such as Duramide and/or diamond-like-carbon, a reactive ion milling step utilizing oxygen species produces a stencil of the present invention having exceptionally straight side walls with practically no undercuts. Thereafter, an ion milling step is undertaken in which the sensor layers that are not covered by the stencil are removed. The accurately formed stencil results in correspondingly accurately formed side walls of the remaining central sensor layers. A magnetic head sensor structure having a desired read track width and accurately formed side walls is thus fabricated.

Abstract: A thin film magnetic head is disclosed having a non-magnetic layer that is formed of a NiPRe (nickel-phosphorus-rhenium) alloy, which makes it possible to optimize the composition ratios of elements Ni, P, and Re, to obtain the non-magnetic layer having a smooth surface, and to prevent concave portions from being formed in both side surfaces of the non-magnetic layer during a milling process, thereby improving recording characteristics. The composition ratio of a NiPRe alloy forming the non-magnetic layer is set within the range surrounded by boundary lines A to D in a ternary diagram, which makes it possible to form a non-magnetic layer having a smooth surface and uniformly form the magnetic layer on the non-magnetic layer. In addition, since the NiPRe alloy having the composition ratio has a low milling rate, it is possible to prevent concave portions from being formed in both side surfaces of the magnetic layer that is formed on or underneath the non-magnetic layer.

Abstract: In a perpendicular magnetic recording head comprising a main magnetic pole layer, a return yoke layer, and an auxiliary yoke layer, a plurality of rear magnetic connecting layers intermittently extending to a connecting position with the return yoke layer are provided at the same lamination position as with the main magnetic pole layer on the rear side of the main magnetic pole layer in the height direction. The auxiliary yoke layer is formed by a plurality of divided auxiliary yoke layers intermittently extending on the rear side of the medium-opposing surface in the height direction and magnetically connecting the main magnetic pole layer to the plurality of rear magnetic connecting layers, respectively. In each of the main magnetic pole layer, plurality of rear magnetic connecting layers, and plurality of divided auxiliary yoke layers, the size in the track width direction is defined greater than the size in the height direction.

Abstract: A giant magnetoresistive memory device includes a magnetic sense layer, a magnetic storage layer, a non-magnetic spacer layer between the magnetic sense layer and the magnetic storage layer, and an antiferromagnetic layer formed in proximity to the magnetic storage layer. The antiferromagnetic layer couples magnetically in a controlled manner to the magnetic storage layer such that the magnetic storage layer has uniform and/or directional magnetization. Additionally or alternatively, an antiferromagnetic layer may be formed in proximity to the magnetic sense layer. The antiferromagnetic layer in proximity to the magnetic sense layer couples magnetically in a controlled manner to the magnetic sense layer such that the magnetic sense layer has uniform and/or directional magnetization.

Abstract: A reproducing head including a read element, first and second electrodes provided at the opposite ends of the read element, a ground electrode provided between the first and second electrodes, a first constant current circuit for passing a first constant current between the first electrode and the ground electrode, and a second constant current circuit for passing a second constant current between the second electrode and the ground electrode. The reproducing head further includes a computing unit connected to the first and second electrodes for synthesizing an output from the first electrode and an output from the second electrode, and a storing unit having a table showing the relation between a synthetic value computed by the computing unit and the outputs from the first and second electrodes.

Abstract: In the magnetic thin film, a magnetization direction of a ferromagnetic layer, e.g., a pinned layer, can be securely fixed. The magnetic thin film comprises: an antiferromagnetic layer; and the ferromagnetic layer. The antiferromagnetic layer is composed of a manganic antiferromagnetic material, and a manganese (Mn) layer is formed between the antiferromagnetic layer and the ferromagnetic layer.

Abstract: A magnetoresistance effect element of the dual spin valve type using a current-perpendicular-to-the-plane (CPP) system where a sensing current flows perpendicular to the stacked faces of a plurality of conductive layers, the magnetoresistance effect element comprises a first unit which includes a free layer and a first pinning layer, a second unit which includes the free layer shared with the first unit and a second pinning layer, a first current control layer which is provided in the first unit and limits the flow quantity of the sensing current, and a second current control layer which is provided in the second unit and limits the flow quantity of the sensing current.

Abstract: A thin-film magnetic head which can keep performances from fluctuating, while restraining an organic insulating material from peeling off is provided. The thin-film magnetic head comprises a lower magnetic pole layer, an upper magnetic pole layer and a first thin-film coil. A resist film made of an organic insulating material is interposed between turns adjacent to each other in the lead constituting the first thin-film coil. The first thin-film coil has a minimum width part and a maximum width part. The minimum width part is arranged closer to an air bearing surface than is a second upper magnetic pole part, while the whole upper face of the minimum width part is covered with the resist film. The maximum width part is arranged on the side farther from the air bearing surface than is the second upper magnetic pole part, while the upper face of the maximum width part is formed with a resist-uncoated area free of the resist film.

Abstract: According to one embodiment, a magnetic head includes a magnetoresistance element including a first spin valve layer, a bias layer, and a second spin valve layer sequentially arranged in the track direction, the first spin valve layer having a first magnetization free layer including a ferromagnetic film, the second spin valve layer having a second magnetization free layer having a ferromagnetic film, and the bias layer having a magnetic layer to apply a bias magnetic field, in a direction of track width orthogonal to the track direction, to the first magnetization free layer and the second magnetization free layer, and a pair of electrodes to cause a current, having a direction almost parallel to the track direction, to flow into the magnetoresistance element.

Abstract: In an MR element constituted in such a manner that a pinned layer whose magnetization direction is fixed, a nonmagnetic spacer layer, and a free layer whose magnetization direction is changed according to an external magnetic field, are laminated in this order; the free layer has a multilayer constitution including a magnetic body mixed with an element having 4f electrons at a ratio of 2 at % to 25 at. %. Specifically, the first layer in contact with the spacer layer, the third layer, the fifth layer, and the seventh layer of the free layer are formed by mixing Nd, Sm, Gd, or Tb into CoFe having a ratio of Co less than or equal to 70 at. %. The second layer and the sixth layer of the free layer are formed by mixing Nd, Sm, Gd, or Tb into NiFe having a ratio of Ni greater than or equal to 70 at. % and less than 100 at. %. The third layer of the free layer is Cu. A damping constant of the free layer is greater than 0.018.

Abstract: The invention provides a giant magneto-resistive effect device (CPP-GMR device) having a CPP (current perpendicular to plane) structure comprising a spacer layer, and a fixed magnetization layer and a free layer stacked one upon another with the spacer layer interposed between them, with a sense current applied in a stacking direction. The free layer functions such that the direction of magnetization changes depending on an external magnetic field. The spacer layer comprises a first nonmagnetic metal layer and a second nonmagnetic metal layer, each made of a nonmagnetic metal material, and a semiconductor layer formed between the first and the second nonmagnetic metal layer. The semiconductor layer is an n-type oxide semiconductor. When the first and second nonmagnetic metal layers are formed in order, the first nonmagnetic metal layer is formed prior to the second nonmagnetic metal layer, and an anti-oxidizing layer is formed between the first and the semiconductor layer.

Abstract: A magnetoresistive element is disclosed that includes first and second terminals provided on first and second opposing surfaces, respectively, of a magnetoresistive film; the magnetoresistive film including a fixed magnetization layer, a non-magnetic metal layer, and a free magnetization layer stacked in this order from the first terminal side; and a first magnetic coupling interruption layer covering the free magnetization layer and a second magnetic coupling interruption layer covering the first magnetic coupling interruption layer provided between the magnetoresistive element and the second terminal. The first magnetic coupling interruption layer includes a first non-magnetic material causing spin-dependent interface scattering.

Abstract: A magneto-resistance effect element includes: a first magnetization layer of which a magnetization is substantially fixed in one direction; a second magnetization layer of which a magnetization is rotated in accordance with an external magnetic field; an intermediate layer which contains insulating portions and magnetic metallic portions and which is provided between the the first magnetic layer and the second magnetic layer; and a pair of electrodes to flow current in a direction perpendicular to a film surface of a multilayered film made of the first magnetic layer, the intermediate layer and the second magnetic layer; wherein the magnetic metallic portions of the intermediate layer contain non-ferromagnetic metal.

Abstract: A magnetic head substrate is provided with a recording element having a main magnetic pole layer and a recording-side monitor element including a resistance film, a lead conductor located as a layer below the resistance film, and a contact conductor for conductively connecting the resistance film and the lead conductor. The resistance film is formed on the same plane as that for a lowermost layer of the main magnetic pole layer or a base layer from the same material as that for them, so as to straddle the surface position of a medium-facing surface in the height direction. The contact conductor and the lead conductor are disposed while being retreated to the back side of the above-described position in the height direction. The upper surface and the lower surface of the contact conductor are entirely in contact with the resistance film and are not exposed to the outside.

Abstract: A manufacturing method of a thin-film magnetic head with an MR read head element, includes an MR film deposition step of depositing on a lower magnetic shield layer an MR multi-layered film, a first patterning step of patterning the deposited MR multi-layered film for defining a track width using a first mask, a first lift-off step of depositing at least an insulation film and a magnetic domain control film under a state where the first mask used the first patterning step is remained and removing the first mask to form a magnetic domain control layer, a second patterning step of patterning the MR multi-layered films for defining a width in a height direction that is perpendicular to a track-width direction to form a MR multi-layered structure, and a upper shield layer deposition step of depositing an upper magnetic shield layer.

Abstract: A thin film magnetic head includes a recording and playback element, a lead conductor layer for feeding a power to the recording and playback element, an electrically conductive bump for conductively connecting the lead conductor layer to an electrode pad for external connection, and an insulating protective layer filling between the recording and playback element and the electrically conductive bump. A thermal deformation-preventing layer composed of a material having a thermal expansion coefficient smaller than that of the insulating protective layer is disposed in the insulating protective layer in such a way as to locate between a medium-facing surface and the electrically conductive bump without being exposed at the medium-facing surface. In the resulting thin film magnetic head, protrusion of the recording and playback element toward the recording medium side can be prevented without changing the configuration of the recording and playback element nor the forming material.

Abstract: A magnetoresistive element has a ferromagnetic double tunnel junction having a stacked structure of a first antiferromagnetic layer/a first ferromagnetic layer/a first dielectric layer/a second ferromagnetic layer/a second dielectric layer/a third ferromagnetic layer/a second antiferromagnetic layer. The second ferromagnetic layer that is a free layer consists of a Co-based alloy or a three-layered film of a Co-based alloy/a Ni—Fe alloy/a Co-based alloy. A tunnel current is flowed between the first ferromagnetic layer and the third ferromagnetic layer.

Abstract: The invention provides a system comprising a non-linear array of magnetoresistive (MR) heads arranged in a two-dimensional matrix for reading information stored on magnetic media. The non-linear array of MR heads may comprise a planar array formed by a plurality of linear arrays of MR heads stacked to define a plurality of layers. Each of the linear arrays may share at least one shield element with another linear array of the non-linear array. In general, each layer is offset by one written track pitch and the number of layers of the invention is equal to the number of written track pitches in a channel pitch. The invention can also be used in a system for reading and writing information to magnetic media at improved track pitches relative to conventional read/write systems.

Abstract: The application provides a magnetic sensor which can suppress an irregularity of a central potential due to a change in a temperature, decrease size of the sensor, and lower the manufacturing cost of the sensor. A magneto-resistive element and fixed resister are provided on an element base and have the same configuration elements. A second magnetic layer and non-magnetic layer in the fixed resistor are reversely laminated on each other in a manner different from the magneto-resistive element, and the second magnetic layer is formed in contact with the first magnetic layer, thereby fixing the magnetization directions of the first magnetic layer and the second magnetic layer in the same direction. In this manner, the irregularity of the temperature coefficient between the magneto-resistive element and the fixed resistor is suppressed, and the irregularity of the central potential due to the change in the temperature is suppressed.

Abstract: A method for providing a self-pinned differential GMR sensor and self-pinned differential GMR sensor. The differential GMR head includes two self-pinned GMR sensors separated by a gap layer. The gap layer may act as a bias structure to provide antiparallel magnetizations for the first and second free layers without using an antiferromagnetic layer. The gap layer may include four NiFe ferromagnetic layers separated with three interlayers. The gap may also be formed to include a structure defined by Ta/Al2O3/NiFeCr/CuOx. One of the pinned layer may include three ferromagnetic layers so that the top ferromagnetic layer of the bottom pinned layer and the bottom ferromagnetic layer of the bottom pinned layer have a magnetization 180° out of phase. The self-pinned GMR sensors may include synthetic free layers that includes a first free sublayer, an interlayer and a second free sublayer that are biased 180° out of phase.

Abstract: A current perpendicular to plane (CPP) GMR sensor having first and second outer pinned layers and a trilayer free layer therebetween. The free layer includes first and second outer magnetic layers, and a partially oxidized magnetic layer disposed there between. The middle partially oxidized layer is antiparallel coupled with the outer magnetic layers of the free layer by first and second coupling layers which prevent oxygen migration from the central layer into the outer magnetic layers of the free layer. The partial oxidation of the middle layer provides a limited amount of electrical resistance at a desired location within the free layer to increase GMR.

Abstract: A double tunnel junction TMR magnetoresistive sensor having first and second magnetic free layers separated by a self pinned magnetic layer. The self pinned magnetic layer is separated from the first and second free layers by thin barrier layers. The pinned layer magnetization is pinned without the need for exchange pinning with an adjacent layer of antiferromagnetic layer.

Abstract: A magneto-resistance effect element is adapted that a non-magnetic layer (9, 18), a free layer (3b, 19), another non-magnetic layer (4, 25), a fixed layer (5, 26), and a fixing layer (6b, 27) are formed vertically symmetric with respect to a first magnetic layer (8b), to which a vertical bias magnetic field is applied from an underlying layer (2a) for a vertical bias layer (2b). The magneto-resistance effect element operates in CPP mode. Generally, the free layer is unavoidably subjected to the influence of a circular electric magnetic field caused by a current flowing perpendicularly to the film surface. However, in the magneto-resistance effect element, the influence of the electric magnetic field to which the free layer (3b) is subjected is opposite to that of the electric magnetic field to which the second free layer (19) is subjected, thereby canceling out the influences as a hole.

Abstract: A free magnetic layer contains free magnetic material layers and an intermediate layer interposed therebetween. A fixed magnetic layer contains fixed magnetic material layers and a non-magnetic intermediate layer interposed therebetween. The free magnetic material layer and the fixed magnetic material layers are formed at equivalent film positions. The magnetizations of the fixed magnetic material layers provided in a vertical direction are antiparallel to each other, and the magnetizations of the free magnetic material layers provided in the vertical direction are antiparallel to each other. By an external magnetic field, the magnetizations of the free magnetic material layer are rotated in phase to magnetization directions of the fixed magnetic material layers.

Abstract: A method and apparatus for providing a dual current-perpendicular-to-plane (CPP) GMR sensor with improved top pinning is disclosed. In the passive regions of the sensor, a tri-level biasing layer is formed proximate to the top self-pinned layer. The tri-level biasing layer includes a first metal oxide layer, a layer of alpha-Fe2O3 and a second metal oxide layer. The pinning of the top self-pinned layer is enhanced by the layer of alpha-Fe2O3. The layer of alpha-Fe2O3 pins the top portion of the pinned layer by providing higher coercivity (HC) to the pinned layer.

Abstract: In a magnetoresistive head according to the present invention, a magnetic domain control film formed at the end of a free layer of a stack of magnetoresistive layers is formed of a Co alloy film, and an underlayer controlling the crystallization state of the Co alloy film and an amorphous metal film layer for controlling the crystallization state of the underlayer are disposed below the magnetic domain control film.

Abstract: A unit element of a magnetic device or a ferroelectric device and magnetic particles of a magnetic recording medium are provided. The outline of the unit element and the magnetic particles is arranged so as to have a portion topologically identical to one of a letter-C shape and a letter-S shape that correspond to the magnetization or polarization distribution immediately before the rotation of magnetization or polarization.

Abstract: A Giant Magneto-Resistive (GMR) sensor (900) having Current Perpendicular to Plane (CPP) structure is formed providing an extended first pinned layer (914) as compared to second pinned layer (912) and free layer (910). Increased magnetoresistance changes, increased pinning strength, increased thermal stability, and decreased susceptibility to Electro-Static Discharge (ESD) events is realized by maintaining equivalent current densities through free layer (910) and second pinned layer (912), while decreasing the relative current density through first pinned layer (914).

Abstract: A dual spin valve (SV) sensor is provided with a longitudinal bias stack sandwiched between a first SV stack and a second SV stack. The longitudinal bias stack comprises an antiferromagnetic (AFM) layer sandwiched between first and second ferromagnetic layers. The first and second SV stacks comprise antiparallel (AP)-pinned layers pinned by AFM layers made of an AFM material having a higher blocking temperature than the AFM material of the bias stack allowing the AP-pinned layers to be pinned in a transverse direction and the bias stack to be pinned in a longitudinal direction. The demagnetizing fields of the two AP-pinned layers cancel each other and the bias stack provides flux closures for the sense layers of the first and second SV stacks.

Abstract: A head includes first and second read modules. The first module has an MR element formed on a wafer having a grating directed along a first direction. The magnetization of the first module element is directed along the first direction. The first module element is biased with a first current directed along a direction such that magnetically stable operation of the element results, that is along an opposite second direction. The second module has an element formed on a wafer having a grating directed along the first direction. The second module is flipped respect to the first module such that the grating is directed along the second direction. The magnetization of the second module element is directed along the second direction. The second module element is biased with a second current directed along the direction opposite to the first current, i.e., the second current is directed along the first direction.

Abstract: In the method of making a thin-film magnetic head in accordance with the present invention, an alignment mark is electrically connected to a multilayer film which will later become a TMR film. Therefore, when the alignment mark is irradiated with a position correcting electron beam in order to correct a drawing position in the subsequent step of electron beam lithography, electric charges of the electron beam flow into the multilayer film without staying in the alignment mark. As a consequence, the position correcting electron beam does not lose its straightforwardness, whereby the drawing position in electron beam lithography can be corrected accurately.

Abstract: A dual spin valve giant magnetoresistance (GMR) sensor having two spin valves with the second spin valve being self-biased is disclosed herein. According to the present invention a dual spin valve system is disclosed wherein the first of the two spin valves in the dual spin valve element is pinned through exchange coupling, i.e., a first anti-ferromagnetic pinning layer and a first ferromagnetic pinned layer structure are exchange coupled for pinning the first magnetic moment of the first ferromagnetic pinned layer structure in a first direction. The second of the two spin valves in the dual spin valve system is self-pinned. The self-pinned spin valve does not use any anti-ferromagnetic layers to pin the magnetization of the pinned layers.

Abstract: A magnetoresistive element has a ferromagnetic double tunnel junction having a stacked structure of a first antiferromagnetic layer/a first ferromagnetic layer/a first dielectric layer/a second ferromagnetic layer/a second dielectric layer/a third ferromagnetic layer/a second antiferromagnetic layer. The second ferromagnetic layer that is a free layer consists of a Co-based alloy or a three-layered film of a Co-based alloy/a Ni—Fe alloy/a Co-based alloy. A tunnel current is flowed between the first ferromagnetic layer and the third ferromagnetic layer.

Abstract: A method and system for providing a magnetoresistive sensor is disclosed. The method and system include providing a first pinned layer, providing a free layer having a length, and providing a first spacer layer disposed between the first pinned layer and the free layer. The first spacer layer has a first interface with the first pinned layer. The method and system also include providing a second pinned layer and providing a second spacer layer disposed between the free layer and the second pinned layer. The second spacer layer has a second interface with the second pinned layer. A direction of a current passed through the magnetoresistive sensor is through the first interface, through the second interface, and along at least a portion of the length of the free layer.

Abstract: A differential read head comprises one tri-layer reader or a plurality of tri-layer readers operating in a current perpendicular to plane (CPP) mode. The tri-layer readers each comprise a first free layer, a second free layer, and a nonmagnetic layer positioned therebetween. A nonmagnetic spacer is positioned between the plurality of tri-layer readers for electrically connecting the plurality of tri-layer readers in series such that a single CPP sense current representing a differential signal flows serially through the read head. With a single tri-layer reader, the free layers are spaced by a width substantially similar to the transition width of the magnetic medium.

Abstract: A method and apparatus for providing a spin valve transistor with differential detection is disclosed. The present invention provides a structure including spin valves that are (100)-oriented on a (100) substrate to take advantages of the high MR sensitivity of spin valve transistor read heads without the need for shields. This allows the distance between the free layers in the differential sensor to be minimized thereby allowing an increase in the areal density.