Abstract: A printing device includes a head and a carriage. The head has a nozzle. The head is configured to eject liquid from the nozzle toward a printing medium. The carriage is configured to move the head in a first direction. The carriage includes a first distance sensor. The first distance sensor is configured to measure a distance between the head and the printing medium. The first distance sensor is a specular reflection type distance sensor. The first distance sensor includes a light-emitting element and a light-receiving element. The light-emitting element and the light-receiving element are aligned in the first direction.

Abstract: A multiplier device for binary magnetic applied fields uses Interlayer Exchange Coupling (IEC) structure where two layers of ferromagnetic material are separated from each other by non-magnetic layers of electrically conductive material of atomic thickness, sufficient to generate anti-magnetic response in a magnetized layer. A plurality of regions on a top surface are activated with a magnetic field in a first direction for a 1 value and in an opposite direction for a 0 value, the multiplication result presented as magnetic field direction on a plurality of output ferromagnetic regions.

Abstract: A magnetic sensor used to detect a detection target substance in a sample includes a substrate having a first surface and a second surface, which is opposite the first surface and a magnetoresistive effect element provided on the first surface of the substrate. The resistance of the magnetoresistive effect element changes in accordance with an input magnetic field. A protective layer covers the top of the magnetoresistive effect element. The surface of the protective layer, which is positioned on top of the magnetoresistive effect element, has a prescribed surface roughness.

Abstract: A memory device, and a method of forming the same, includes a bottom electrode above an electrically conductive structure, the electrically conductive structure is embedded in an interconnect dielectric material. A magnetic tunnel junction stack located above the bottom electrode is formed by a magnetic reference layer above the bottom electrode, a tunnel barrier layer above the magnetic reference layer, and a laterally-recessed magnetic free layer above the tunnel barrier layer. Sidewall spacers surround the laterally-recessed magnetic free layer for confining an active region formed by the laterally-recessed magnetic free and the tunnel barrier layer.

Abstract: A method of designing a magnetic sensor that can easily accommodate various design conditions is provided. The method has: preparing magnetic sensors, wherein, for each magnetic sensor, magnetization directions of the first to fourth magnetically pinned layers form first to fourth angles ?1 to ?4 relative to a specific reference angle, respectively, and ?1=?3, ?2=?4, ?1??2, and each magnetic sensor has a value of ?1-?2 that is different from values of 01-02 of remaining magnetic sensors, for each magnetic sensor, obtaining a relationship between an angular range of the magnetization direction of the first to fourth magnetically free layers and an output range of the magnetic sensor, wherein the angular range satisfies a specific linear relationship between the magnetization direction and the output of the magnetic sensor, and selecting a magnetic sensor that satisfies required conditions for the angular range and the output range from among the magnetic sensors.

Abstract: The disclosed technology relates generally to semiconductor devices, and more particularly to a layer stack for a magnetic tunnel junction (MTJ) device, and a method of forming the same. According to an aspect, a layer stack for a (MTJ) device comprises a seed layer structure, a pinning layer structure arranged above the seed layer structure, and above the pinning layer structure a Fe-comprising reference layer structure and a free layer structure separated by a tunnel barrier layer. The seed layer structure comprises a Ru-comprising layer and a Cr-comprising layer. The Cr-comprising layer forms an upper layer of the seed layer structure.

Abstract: In an exchange coupling film that has a large magnetic field (Hex) in which the direction of magnetization of a fixed magnetic layer is reversed, high stability under high temperature conditions, and excellent strong-magnetic field resistance, an antiferromagnetic layer, a fixed magnetic layer, and a free magnetic layer are stacked, the antiferromagnetic layer is composed of a PtCr layer and an XMn layer (where X is Pt or Ir), the XMn layer is in contact with the fixed magnetic layer, and the fixed magnetic layer is made of iron, cobalt, an iron-cobalt alloy, or an iron-nickel alloy.

Abstract: Example implementations are concerned with magnetoresistive sensors and with corresponding fabrication methods for magnetoresistive sensors. One example here relates to a magnetoresistive sensor having a layer stack. The layer stack comprises a reference layer having a reference magnetization, which is fixed and has a first magnetic orientation. The layer stack comprises a magnetically free layer. The magnetically free layer has a magnetically free magnetization. The magnetically free magnetization is variable in the presence of an external magnetic field. The magnetically free magnetization has a second magnetic orientation in a ground state. One of the first or the second magnetic orientation is oriented in-plane and the other is oriented out-of-plane. The layer stack comprises a metal multilayer. In this case, either the metal multilayer is arranged adjacent to the magnetically free layer, or the metal multilayer constitutes the magnetically free layer.

Abstract: The present disclosure generally relates to data storage devices, and more specifically, to a magnetic media drive employing a magnetic recording head. The head includes a main pole, a trailing shield, and a MAMR stack including at least one magnetic layer. The magnetic layer has a surface facing the main pole, and the surface has a first side at a media facing surface (MFS) and a second side opposite the first side. The length of the second side is substantially less than the length of the first side. By reducing the length of the second side, the area to be switched at a location recessed from the MFS is reduced as a current flowing from the main pole to the trailing shield or from the trailing shield to the main pole. With the reduced area of the magnetic layer, the overall switch time of the magnetic layer is decreased.

Abstract: A magnetic element includes a first free layer, a barrier layer over the first free layer, and a second free layer over the barrier layer. The first free layer includes a first ferromagnetic bilayer and a first amorphous insertion layer (e.g., CoHf) between the first ferromagnetic bilayer. The first ferromagnetic bilayer is selected from CoB, CoFeB, FeB, and combinations thereof. The second free layer includes a second ferromagnetic bilayer and a second amorphous insertion layer (e.g., CoHf) between the second ferromagnetic bilayer. The second ferromagnetic bilayer is selected from CoB, CoFeB, FeB, and combinations thereof. Each of the first and the second amorphous insertion layer independently can be ferromagnetic or non-ferromagnetic and can have a recrystallization temperature of about 300° C. and above. The magnetic element can further include a non-ferromagnetic amorphous buffer layer and/or a non-ferromagnetic amorphous capping layer.

Abstract: A spin orbit torque (SOT) memory device includes an SOT electrode on an upper end of an MTJ device. The MTJ device includes a free magnet, a fixed magnet and a tunnel barrier between the free magnet and the fixed magnet and is coupled with a conductive interconnect at a lower end of the MTJ device. The SOT electrode has a footprint that is substantially the same as a footprint of the MTJ device. The SOT device includes a first contact and a second contact on an upper surface of the SOT electrode. The first contact and the second contact are laterally spaced apart by a distance that is no greater than a length of the MTJ device.

Abstract: A magnetoresistive sensor includes a first non-magnetic layer, a second non-magnetic layer, and a magnetic free bi-layer. The magnetic free bi-layer is disposed between first non-magnetic layer and the second non-magnetic layer, the magnetic free bi-layer including a first magnetic free layer coupled to a second magnetic free layer. The first magnetic free layer is coupled to the first non-magnetic layer, and the second magnetic free layer is coupled to the second non-magnetic layer. The second non-magnetic layer comprises a non-magnetic material having an atomic radius within 10% of an atomic radius of at least one of the first magnetic free layer and the second magnetic free layer.

Abstract: A magnetic random access memory includes a memory cell including a first fixed layer, a second fixed layer, and one or more free layers disposed between the first fixed layer and the second fixed layer. The first and second fixed layers are continuous layers and commonly shared by a plurality of memory cells. The magnetic random access memory has a relatively simple structure that not only reduces magnetic interference between memory cells, but also simplifies the fabrication process and increases the integration level.

Abstract: A magnetic junction usable in a magnetic device is described. The magnetic junction includes a free layer and an oxide interlayer on the free layer. The oxide interlayer includes at least one glass-forming agent. In some aspects, the magnetic junction includes a reference layer and a nonmagnetic spacer layer being between the reference layer and the free layer. The free layer is between the nonmagnetic spacer layer and the oxide interlayer.

Abstract: The magnetic sensor can prevent an increase of a positional detection error of a subject/object even in the case of applying an external magnetic field with a magnetic field intensity exceeding a predetermined range. A magnetic sensor is equipped with a magnetoresistive effect element (MR element) 11 that can detect an external magnetic field and a soft magnetic body shield 12. The soft magnetic body shield(s) 12 are/is positioned above and/or below the MR element 11 in a side view, and the size of the MR element 11 is physically included within a perimeter of the soft magnetic body shield 12.

Abstract: A magneto-resistive effect element includes a magnetization free layer, an intermediate layer, and a magnetization pinned layer. The magnetization free layer extends along a first plane. The intermediate layer extends along the first plane, and is stacked on the magnetization free layer. The magnetization pinned layer extends along the first plane, and is provided on side opposite to the magnetization free layer with the intermediate layer being interposed therebetween. Here, the magnetization free layer includes an end surface that has a maximum inclination angle of 42° or less relative to the first plane.

Abstract: This technology provides a method for fabricating an electronic device. A method for fabricating an electronic device including a variable resistance element, which includes a free layer having a variable magnetization direction; a pinned layer having a first non-variable magnetization direction, and including first ferromagnetic materials and a first spacer layer interposed between adjacent two first ferromagnetic materials among the first ferromagnetic materials; a tunnel barrier layer interposed between the free layer and the pinned layer; a magnetic correction layer having a second magnetization direction which is anti-parallel to the first magnetization direction; and a third spacer layer interposed between the magnetic correction layer and the pinned layer, and providing an anti-ferromagnetic exchange coupling between the magnetic correction layer and the pinned layer.

Abstract: A modified double magnetic tunnel junction (mDMTJ) structure is provided which includes a non-magnetic, spin-conducting metallic layer sandwiched between a magnetic free layer and a first tunnel barrier layer; the first tunnel barrier layer contacts a first magnetic reference layer. A second tunnel barrier layer is located on the magnetic free layer and a second magnetic reference layer is located on the second tunnel barrier layer. The mDMTJ structure of the present application exhibits efficient switching (at a low current) and speedy readout (high TMR).

Abstract: The present disclosure generally relates to magnetic read heads comprising a dual free layer (DFL) structure. The magnetic read head comprises a first shield, a second shield, and a DFL structure disposed between the first and second shields. The DFL structure comprises a magnetic seed layer, a first free layer, and a second free layer. A non-magnetic spacer layer is disposed between and in contact with the first shield and the magnetic seed layer of the DFL structure at a media facing surface. A material and a thickness of the non-magnetic spacer layer is selected to control the coupling between the first shield and the magnetic seed layer of the DFL structure.

Abstract: Magnetic sensor 1 has MR elements 11A to 14A that are connected to each other. MR elements 11A to 14A belongs either to group G1 in which electric resistance increases when the magnetization direction of each free layer 26 is rotated a predetermined angle in a same direction, or to group G2 in which the electric resistance decreases when the magnetization direction of each free layer 26 is rotated the predetermined angle in the same direction. A variation of an output of magnetic sensor 1 due to an increase of the electric resistance of the electric resistance elements of one group and a variation of the output of magnetic sensor 1 due to a decrease of the electric resistance of the electric resistance elements of another group are cancelled out.

Abstract: A magnetic sensor comprising a first shield and a second shield and a sensor stack between the first and the second shield, the sensor stack having a plurality of layers wherein at least one layer is annealed using in-situ rapid thermal annealing. In one implementation of the magnetic sensor a seed layer is annealed using in-situ rapid thermal annealing. Alternatively, one of a barrier layer, an antiferromagnetic (AFM) layer, and a cap layer is annealed using in-situ rapid thermal annealing.

Abstract: Aspects of the present disclosure generally relate to magnetic recording heads of magnetic recording devices. A magnetic read head includes a first pinning layer magnetically oriented in a first direction, and a second pinning layer formed above the first pinning layer and magnetically oriented in a second direction that is opposite of the first direction. The magnetic read head includes a rear hard bias disposed outwardly of one or more of the first pinning layer relative or the second pinning layer. The rear hard bias is magnetically oriented to generate a magnetic field in a bias direction. The bias direction points in the same direction as the first direction or the second direction. The magnetic read head does not include an antiferromagnetic (AFM) layer between a lower shield and an upper shield.

Abstract: A magnetic element is disclosed wherein a composite seed layer such as TaN/Mg enhances perpendicular magnetic anisotropy (PMA) in an overlying magnetic layer that may be a reference layer, free layer, or dipole layer. The first seed layer is selected from one or more of Ta, Zr, Nb, TaN, ZrN, NbN, and Ru. The second seed layer is selected from one or more of Mg, Sr, Ti, Al, V, Hf, B, and Si. A growth promoting layer made of NiCr or an alloy thereof is inserted between the seed layer and magnetic layer. In some embodiments, a first composite seed layer/NiCr stack is formed below the reference layer, and a second composite seed layer/NiCr stack is formed between the free layer and a dipole layer. The magnetic element has thermal stability to at least 400° C.

Abstract: A storage element is provided. The storage element includes a memory layer; a fixed magnetization layer; an intermediate layer including a non-magnetic material; wherein the intermediate layer is provided between the memory layer and the fixed magnetization layer; wherein the fixed magnetization layer includes at least a first magnetic layer, a second magnetic layer, and a non-magnetic layer, and wherein the first magnetic layer includes a CoFeB composition. A memory apparatus and a magnetic head are also provided.

Abstract: A free layer comprising a bilayer (e.g., a first and a second layer) with an amorphous insertion layer in between the bilayer. The free layer includes a ferromagnetic nanolayer between the bilayer and a barrier layer. The magnetostriction of the free layer is tunable by varying the thicknesses of each of the first and the second layers. The free layer can be part of a magnetoresistive device with a reference layer or with another free layer.

Abstract: A Z detection unit includes magnetoresistive elements provided on inclined side surfaces of Z detection recesses. An X detection unit includes magnetoresistive elements provided on inclined side surfaces of X detection recesses. A Y detection unit includes magnetoresistive elements provided on inclined side surfaces of Y detection recesses. Directions of fixed magnetization of fixed magnetic layers included in the magnetoresistive elements are set to directions shown by arrows with solid lines.

Abstract: The present disclosure generally relates to data storage devices, and more specifically, to a magnetic media drive employing a magnetic recording head. The head includes a main pole, a trailing shield, and a MAMR stack including at least one magnetic layer. The magnetic layer has a surface facing the main pole, and the surface has a first side at a media facing surface (MFS) and a second side opposite the first side. The length of the second side is substantially less than the length of the first side. By reducing the length of the second side, the area to be switched at a location recessed from the MFS is reduced as a current flowing from the main pole to the trailing shield or from the trailing shield to the main pole. With the reduced area of the magnetic layer, the overall switch time of the magnetic layer is decreased.

Abstract: According to an embodiment, a storage device includes a resistance change element. The resistance change element includes a stacked structure including a first ferromagnet, a second ferromagnet, and a first nonmagnet between the first ferromagnet and the second ferromagnet. The first nonmagnet includes a boron-doped rare-earth oxide.

Abstract: Memory devices and methods of forming the same include forming a memory stack over a bottom electrode. The memory stack has a free magnetic layer formed on the tunnel barrier layer. A first boron-segregating layer is formed directly on the free magnetic layer. An anneal is performed to cause boron to leave the free magnetic layer at an interface with the first boron-segregating layer. A top electrode is formed over the memory stack.

Abstract: A magneto-resistive effect element includes a magnetization free layer, an intermediate layer, and a magnetization pinned layer. The magnetization free layer extends along a first plane. The intermediate layer extends along the first plane, and is stacked on the magnetization free layer. The magnetization pinned layer extends along the first plane, and is provided on side opposite to the magnetization free layer with the intermediate layer being interposed therebetween. Here, the magnetization free layer includes an end surface that has a maximum inclination angle of 42° or less relative to the first plane.

Abstract: Reader-to-reader separation (RRS) is substantially decreased, and cross-track alignment of top and bottom sensors is improved with a process where a sidewall on the two sensors is formed during a single photolithography and ion beam etch sequence. RRS is minimized since the two sensors share a common reference layer (RL), and shields between the readers are omitted. A RL front portion is formed on a first stack of layers with a first free layer and uppermost first tunnel barrier, and a RL back portion is on a second stack comprising a reference layer and antiferromagnetic coupling layer sequentially formed on an antiferromagnetic layer. The RL may be a single layer or a synthetic antiferromagnetic structure so that the sensors operate in a common mode or differential mode, respectively. A third stack with a bottom second tunnel barrier and overlying second free layer is formed on the RL front portion.

Abstract: A magnetoresistive random-access memory (MRAM) is disclosed. MRAM device has a magnetic tunnel junction stack having a significantly improved performance of the free layer in the magnetic tunnel junction structure. The MRAM device utilizes a precessional spin current (PSC) magnetic structure in conjunction with a perpendicular MTJ where the in-plane magnetization direction of the PSC magnetic layer is free to rotate. The precessional spin current magnetic layer a first and second precessional spin current ferromagnetic layer separated by a nonmagnetic precessional spin current insertion layer.

Abstract: According to one embodiment, a magnetic device includes a first memory cell including a magnetoresistive effect element and a selector, the selector including titanium (Ti), germanium (Ge) and tellurium (Te).

Abstract: A spin current magnetization reversal element includes: a first ferromagnetic metal layer with a changeable magnetization direction, and a spin-orbit torque wiring, wherein a first direction is defined as a direction perpendicular to a surface of the first ferromagnetic metal layer, the wiring extends in a second direction intersecting the first and is bonded to a first surface of the first ferromagnetic metal layer, wherein the wiring includes a pure spin current generator which is bonded to the metal layer, and a low-resistance portion which is connected to both ends of the generator in the second direction and is formed of a material having a smaller electrical resistivity than the generator, and the generator is formed so that an area of a cross-section orthogonal to the first direction continuously and/or stepwisely increases as it recedes from a bonding surface bonded to the first ferromagnetic metal layer in the first direction.

Abstract: A magnetic tunnel junction device includes a pinned magnetic layer, a free magnetic layer embodied as a synthetic antiferromagnetic device, and a nonmagnetic barrier layer sandwiched between the pinned magnetic layer and the free magnetic layer. The free magnetic layer includes a first ferromagnetic layer, a second ferromagnetic layer and a nonmagnetic spacing layer sandwiched between them; and can transform from the antiferromagnetic state to the ferromagnetic state regulated by electric field. Under the coaction of the electric field and the current, the ferromagnetic layer close to the barrier layer of the magnetic tunnel junction is switched to write in data. Also, a magnetic random access memory based on a synthetic antiferromagnetic free layer can write in data under the coaction of the electric field and the current, and has advantages such as simple structure, low power consumption, rapid speed, radiation resistant, and non-volatility.

Abstract: A spin current magnetization reversal element includes: a first ferromagnetic metal layer with a changeable magnetization direction, and a spin-orbit torque wiring, wherein a first direction is defined as a direction perpendicular to a surface of the first ferromagnetic metal layer, the wiring extends in a second direction intersecting the first and is bonded to a first surface of the first ferromagnetic metal layer, wherein the wiring includes a pure spin current generator which is bonded to the metal layer, and a low-resistance portion which is connected to both ends of the generator in the second direction and is formed of a material having a smaller electrical resistivity than the generator, and the generator is formed so that an area of a cross-section orthogonal to the first direction continuously and/or stepwisely increases as it recedes from a bonding surface bonded to the first ferromagnetic metal layer in the first direction.

Abstract: A storage element is provided. The storage element includes a memory layer; a fixed magnetization layer; an intermediate layer including a non-magnetic material; wherein the intermediate layer is provided between the memory layer and the fixed magnetization layer; wherein the fixed magnetization layer includes at least a first magnetic layer, a second magnetic layer, and a non-magnetic layer, and wherein the first magnetic layer includes a CoFeB composition. A memory apparatus and a magnetic head are also provided.

Abstract: A magnetic cell includes a magnetic region formed from a precursor magnetic material. The precursor magnetic material included a diffusible species and at least one other species. An oxide region is disposed between the magnetic region and another magnetic region, and an amorphous region is proximate to the magnetic region. The amorphous region includes an attracter material that has a chemical affinity for the diffusible species that is higher than a chemical affinity of the at least one other species for the diffusible species. Thus, the diffusible species is transferred from the precursor magnetic material to the attracter material, forming a depleted magnetic material. The removal of the diffusible species and the amorphous nature of the region of the attracter material promotes crystallization of the depleted magnetic material, which enables high tunnel magnetoresistance and high magnetic anisotropy strength. Methods of fabrication and semiconductor devices are also disclosed.

Abstract: A magnetic apparatus, a memory using the magnetic apparatus and method for providing the magnetic apparatus are described. The magnetic apparatus includes a magnetic junction and a hybrid capping layer adjacent to the magnetic junction. The hybrid capping layer includes an insulating layer, a discontinuous oxide layer, and a noble metal layer. The discontinuous oxide layer is between the insulating layer and the noble metal layer. The insulating layer is between the magnetic junction and the noble metal layer. In one aspect, the magnetic junction includes a reference layer, a nonmagnetic spacer layer that may be a tunneling barrier layer and a free layer.

Abstract: A magnetic data recording element for magnetic random access memory data recording. The magnetic data recording element includes a magnetic tunnel junction element that includes a magnetic reference layer, a magnetic free layer and a non-magnetic barrier layer located between the non-magnetic reference layer and the magnetic free layer. The magnetic reference layer includes a layer of Hf that causes the magnetic reference layer to have an increased perpendicular magnetic anisotropy. This increased perpendicular magnetic anisotropy improves reliability and stability of the magnetic data recording element by preventing loss of magnetic orientation of the magnetic reference layer such as during high writing current conditions.

Abstract: Apparatuses, systems, and methods are disclosed for magnetoresistive random access memory. A magnetic tunnel junction (MTJ) for storing data may include a reference layer. A free layer of an MTJ may be separated from a reference layer by a barrier layer. A free layer may be configured such that one or more resistance states for an MTJ correspond to one or more positions of a magnetic domain wall within the free layer. A domain stabilization layer may be coupled to a portion of a free layer, and may be configured to prevent migration of a domain wall into the portion of the free layer.

Abstract: A measurement device includes a light source that radiates an illumination light on a measurement object; and a measurement unit that measures a measurement light that is reflection light obtained by the illumination light being reflected by the measurement object or transmitted light obtained by the illumination light passing through the measurement object. The illumination light is a plurality of illumination lights. In a case where the measurement object is positioned at a reference position, an illumination center at which an optical axis of each of the plurality of illumination lights and the measurement object intersect, and a measurement center that is a center of a measurement region of the measurement object measured by the measurement unit are positioned at different positions.

Abstract: A magnetic recording medium includes a substrate, a barrier layer, a crystal grain size control layer, and a magnetic layer that are arranged in this order. The barrier layer includes at least one of oxides, nitrides, and carbides, and the crystal grain size control layer is a crystalline layer including Ag and having an average thickness in a range of 0.1 nm to 1 nm. The barrier layer makes contact with the crystal grain size control layer, and the magnetic layer includes an alloy having a L10 crystal structure and a (001) face orientation.

Abstract: A magnetoresistive element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a first nonmagnetic layer disposed between the first ferromagnetic layer and the second ferromagnetic layer, the first ferromagnetic layer including (MnxGay)100-zPtz, the (MnxGay)100-zPtz having a tetragonal crystal structure, where 45 atm %?x?75 atm %, 25 atm %?y?55 atm %, x+y=100 atm %, and 0 atm %<z?7 atm %.

Abstract: A method and system provide a magnetic read apparatus. The magnetic read apparatus includes a read sensor. The read sensor includes a pinning layer, a nonmagnetic insertion layer and a pinned layer. The nonmagnetic insertion layer has a location selected from a first location and a second location. The first location is between the pinned layer and the pinning layer. The second location is within the pinning layer.

Abstract: A process flow is disclosed for forming a MR sensor having an antiferromagnetic (AFM) layer recessed behind a bottom shield to reduce reader shield spacing and improve pin related noise. An AP2/AFM coupling layer/AP1 stack that extends from an air bearing surface to the MR sensor backside is formed above the AFM layer. The AP2 layer is pinned by the AFM layer, and the AP1 layer serves as a reference layer to an overlying free layer during a read operation. The AP1 and AP2 layers have improved resistance to magnetization flipping because back portions thereof have a full cross-track width “w” between MR sensor sides thereby enabling greater pinning strength from the AFM layer. Front portions of the AP1/AP2 layers lie under the free layer and have a track width less than “w”. The bottom shield may have an anti-ferromagnetic coupling structure.

Abstract: A magnetoresistive element according to an embodiment includes: a first magnetic layer; a second magnetic layer; a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; and a third magnetic layer disposed between the first magnetic layer and the first nonmagnetic layer, the first magnetic layer containing Mn and at least one of Ge, Ga, or Al, and the third magnetic layer containing Mn2VZ, where V represents vanadium, and Z represents at least one element of Al or Ga.

Abstract: A double pinned magnetoresistance element has a temporary ferromagnetic layer, two PtMn antiferromagnetic pinning layers, and two associated synthetic antiferromagnetic (SAF) pinned layer structures, the temporary ferromagnetic layer operable to improve annealing of the two PtMn antiferromagnetic pinning layers and the two associated SAFs to two different magnetic directions that are a relative ninety degrees apart.

Abstract: The disclosed technology generally relates to magnetic memory and more particularly to voltage-controlled magnetic memory, and to methods of using same. In one aspect, a magnetic memory comprises a first magnetic stack including a first gate dielectric layer formed between a first gate electrode and a first free ferromagnetic layer. The magnetic memory additionally comprises a second magnetic stack including a second gate dielectric layer formed between a second gate electrode and a second free ferromagnetic layer. The first free ferromagnetic layer and the second free ferromagnetic layer of the magnetic memory are magnetically coupled, contiguous and are positioned at an oblique angle relative to each other, and the first gate electrode and the second gate electrode are electrically isolated from each other.

Abstract: A storage element is provided. The storage element includes a memory layer; a fixed magnetization layer; an intermediate layer including a non-magnetic material; wherein the intermediate layer is provided between the memory layer and the fixed magnetization layer; wherein the fixed magnetization layer includes at least a first magnetic layer, a second magnetic layer, and a non-magnetic layer, and wherein the first magnetic layer includes a CoFeB composition. A memory apparatus and a magnetic head are also provided.