Abstract: An image sensing device comprising a plurality of unit photosensing pixels to convert light into electrical signals, each unit photosensing pixel including a photosensor and a plurality of transistors to perform operations associated with the photosensor and a plurality of protection devices, each of which is coupled to any one of the plurality of transistors, wherein each of the plurality of protection devices includes a first region doped with a first type of conductive impurities, a second region doped with a second type of conductive impurities and surrounding the first region, and a third region doped with the first type of conductive impurities and surrounding the second region, wherein the first region includes a contact portion and a first well located below the contact portion, and wherein the contact portion has a higher doping density than the first well, and is coupled to any one of the plurality of transistors.

Abstract: The present disclosure provides a transistor, a method for configuring the same, an electrostatic discharge (ESD) protection circuit, and an electronic device for ESD protection. The transistor comprises a P-type well, a body terminal region, a source region, and a metal silicide layer. The body terminal region and the source region are disposed within the P-type well. The body terminal region is adjacent to the source region. The metal silicide layer is disposed on surfaces of the body terminal region and the source region, and electrically connected to the body terminal region and the source region separately. A metal and contact structures are provided on the metal silicide layer to adjust the resistance between the emitter of the parasitic bipolar transistor of the transistor and the body terminal region or between the base of the parasitic bipolar transistor and the source region, for ESD protection.

Abstract: A luminaire driver system comprising: a driver (200) having a driver housing (250) with output connections (202) for connection to at least one light source (110); wherein the driver comprises a driver circuitry (210) arranged in said driver housing, said driver circuitry being configured to perform a driving functionality of the at least one light source (110); wherein said driver housing is provided with a receiving means (260) for receiving a pluggable surge protection module (300); the surge protection module (300) comprising surge protection circuitry (310), wherein the surge protection module and/or the receiving means are configured such that the surge protection circuitry is connectable to a power supply and such that the surge protection circuitry is electrically connected to the driver circuitry, when the surge protection module is received in the receiving means.

Abstract: An electrostatic discharge protection circuit includes: a pulse detection unit, a delay unit, a control unit, and a discharge unit. The pulse detection unit is configured to detect an electrostatic pulse signal; the delay unit is configured to delay or enhance driving capability of the pulse detection signal output by the pulse detection unit; the control unit is configured to generate a control signal based on a first delay signal and a second delay signal output by the delay unit; and the discharge unit is configured to open or close an electrostatic charge discharge passage based on the control signal output by the control unit.

Abstract: A printed wiring board includes resin insulating layers, and conductor layers laminated on the resin insulating layers, respectively. The conductor layers includes a conductor layer including a conductor circuit formed such that the conductor circuit has recesses each having a depth of 2.0 ?m or more and a bottom whose diameter is larger than a diameter of an opening part of a respective one of the recesses.

Abstract: A coaxial isolator includes an integrated circuit board, a first body and a second body. The integrated circuit board includes a first surface, a second surface, a signal processing circuit extending along a central axis, two first capacitors, two second capacitors, and a first iron core. The first capacitors are located on the first surface and are respectively disposed on both sides of the signal processing circuit. The second capacitors are located on the second surface and are respectively arranged corresponding to the positions of the first capacitors. The first iron core surrounds the signal processing circuit. A first tube portion of the first body surrounds the integrated circuit board, and a first end portion of the first body is used for connecting with an external device. A second end portion of the second body is used for connecting with another external device.

Abstract: A package structure is provided. The package structure includes a leadframe, a GaN power device, and an electrostatic discharge protection component. The leadframe includes a gate pad, a source pad, and a drain pad, which are disposed on the leadframe. The GaN power device has a gate end. The GaN power device is disposed on the source pad of the leadframe. The electrostatic discharge protection component includes a first pad. The first pad is disposed on the electrostatic discharge protection component. The electrostatic discharge protection component is disposed on the source pad of the leadframe. The gate end of the GaN power device is electrically connected to the first pad of the electrostatic discharge protection component. The first pad of the electrostatic discharge protection component is electrically connected to the gate pad of the leadframe.

Abstract: In some aspects of the present disclosure, an electrostatic discharge (ESD) protection circuit is disclosed. In some aspects, the ESD protection circuit includes a first transistor coupled to a pad, a second transistor coupled between the first transistor and ground, a stack of transistors coupled to the first transistor, and an ESD clamp coupled between the stack of transistors and the ground.

Abstract: Apparatuses, systems, and methods for protection against the effects of an electromagnetic pulse (EMP). A system for protecting against an EMP may include an electronic device, a conductive element, and a connector apparatus coupleable between the electronic device and the conductive element. The conductive element may include a housing having a first end and a second end, the first end coupleable to the electronic device and the second end coupleable to the conductive element, a signal wire extending at least partially through the housing which conveys at least one signal between the first end and the second end, a grounding wire coupleable to the signal wire, and at least one suppression element coupleable to at least one of the signal wire and the grounding wire. A casing may receive at least a portion of the electronic device.

Abstract: A semiconductor integrated circuit includes an input terminal, a semiconductor circuit, and a surge protection circuit connected between the input terminal and the semiconductor circuit. The surge protection circuit includes a first clamping circuit, a second clamping circuit, and a first inductor. The first clamping circuit includes first and second diodes connected in series. The second clamping circuit includes third and fourth diodes connected in series. The first inductor is connected between a first node and a second node. The first node is between the first diode and the second diode and connected to the input terminal. The second node is between the third diode and the fourth diode and connected to the semiconductor circuit.

Abstract: An input/output circuit for a memory and a method of controlling the same are disclosed. The input/output circuit and the method of controlling the same are configured to prevent a memory element from being falsely or incorrectly programmed due to an ESD pulse. More particularly, the input/output circuit and the method of controlling the same include an ESD detection unit configured to detect a programming voltage or an ESD pulse on a pad terminal, a control logic unit configured to transmit a first voltage or a second voltage according to the programming voltage and the ESD pulse, and a switch unit configured to perform a turn-on or turn-off operation according to the first voltage or the second voltage.

Abstract: The invention relates to a method for reducing the inrush current of an electrical device operated by means of a battery and/or an accumulator, which device is designed as a medical device which can be implanted in a patient and has an electronic circuit which is supplied with electrical energy via at least two supply potential lines, wherein the electronic circuit has a plurality of backup capacitors, each of which is connected or connectable by means of a first terminal to one of the at least two supply potential lines and by means of a second terminal to another of the at least two supply potential lines, wherein the electrical device has an energy management system by means of which one or more parts of the electronic circuit are switched off in an energy-saving mode and are switched on again when the energy-saving mode is exited, wherein the backup capacitors, individually or in a plurality of groups via one switching element per capacitor or group of capacitors, are disconnected from at least one of the

Abstract: A system for front end protection of an RF receiver against interfering pulsed high power RF signals includes a dual-diode device comprising a first Transient Voltage Suppressor (TVS) diode; and a second TVS diode; wherein the first TVS diode and the second TVS diode are located between an RF input/output and an RF receiver front end.

Abstract: A set of packet-energy-transfer operating parameters is automatically configured to optimize safety, efficiency and/or resiliency in a digital-electricity power system. A set of limits is configured for packet-energy-transfer operation that does not immediately preclude safe operation of the transmission lines, wherein each limit in the set defines constraints for at least one of measurements and calculations based on impedance in series or in parallel with the transmission lines, operational efficiency of the digital-electricity power system, and/or voltage or current signal integrity. The operation of the transmission lines is measured, and the measurements are compared with the limits. Upon at least one of the limits being exceeded, a revised set of limits is automatically configured (or a new configuration is generated) based on which limit was exceeded.

Abstract: An electrostatic protection circuit includes: a monitoring circuit configured to generate a trigger signal in response to an electrostatic pulse being present on the power supply pad; a discharge transistor connected between the power supply pad and the ground pad and configured to be turned on under control of the trigger signal and discharge electrostatic discharging charges to the ground pad; and a delay circuit having an input terminal connected to an output terminal of the monitoring circuit, and an output terminal connected to a control terminal of the discharge transistor, where the delay circuit is configured to perform delay processing on the electrostatic protection circuit in a first state and turn off the discharge transistor in a second state.

Abstract: In an aspect, the disclosure is directed to an electrical circuit which includes not limited to: a first bonding pad having a bias voltage, a voltage pull-up circuit configured to set the bias voltage of the first bonding pad to a high voltage, a voltage pull-down circuit configured to switch bias voltage of the first bonding pad from the high voltage to a low voltage in response to the voltage pull-down circuit receiving a first control signal which activates the voltage-pull down circuit, a rise time delay control circuit configured to control a rise time of the bias voltage of the first bonding pad, wherein the bias voltage of the first bonding pad starts to rise in response to the first control signal deactivating the voltage pull-down circuit, and a driving circuit configured to drive a second control signal to activate the driving circuit.

Abstract: The invention relates to a surge detector comprising a transformer comprising a primary winding arranged to receive a fraction of a surge current and a secondary winding magnetically coupled to the primary winding and arranged to output a signal representing the fraction of the surge current. The surge detector further comprises a shunt connection in parallel with the primary winding, wherein the impedance of the shunt connection is lower than the impedance of the primary winding.

Abstract: An electrostatic discharge (ESD) protection circuit is provided to minimize ESD damage to an internal circuit in a CDM model. The ESD protection circuit includes two stages of discharging circuits that are coupled to an IO pin and the internal circuit, a first power clamp circuit, and a second power clamp circuit. The first power clamp circuit is electrically connected to a power rail and a ground rail to discharge a part of a current to the ground, and the second power clamp circuit is electrically connected to a second-stage discharging circuit and the ground rail, so that the other part of the current is discharged to the ground through the second power clamp circuit.

Abstract: An image sensing device comprising a plurality of unit photosensing pixels to convert light into electrical signals, each unit photosensing pixel including a photosensor and a plurality of transistors to perform operations associated with the photosensor and a plurality of protection devices, each of which is coupled to any one of the plurality of transistors, wherein each of the plurality of protection devices includes a first region doped with a first type of conductive impurities, a second region doped with a second type of conductive impurities and surrounding the first region, and a third region doped with the first type of conductive impurities and surrounding the second region, wherein the first region includes a contact portion and a first well located below the contact portion, and wherein the contact portion has a higher doping density than the first well, and is coupled to any one of the plurality of transistors.

Abstract: This application relates to a power consumption grading method for a network-based power supply system. The method includes: when it is detected that power overload protection is not triggered, starting a plurality of power modules of a powered device one by one in a specific order until all the plurality of power modules are started or it is detected that the power overload protection is triggered after a specific power module is started; when it is detected that the power overload protection is triggered, selecting, according to the specific order and based on the specific power module, one or more of the plurality of power modules as a power module combination of the powered device; and determining a load power of the powered device and a corresponding power consumption level based on the power module combination.

Abstract: An electrostatic discharge protection circuit is provided. The electrostatic discharge protection circuit includes first, second, and third transistors and a discharge circuit. The first transistor has a first gate, a first drain coupled to the bonding pad, and a first source coupled to a first node. The second transistor has a second gate coupled to a power terminal, a second drain coupled to the first gate, and a second source coupled to a ground. The third transistor has a third gate coupled to the power terminal, a third drain coupled to the first node, and a third source coupled to the ground. The discharge circuit is controlled by a driving voltage at the first node. In response to an electrostatic discharge event occurring on the bonding pad, the discharge circuit provides a discharge path between the bonding pad and the ground according to the driving voltage.

Abstract: An electrical assembly comprises a plurality of modules (36), each module (36) including at least one switching element (38) and at least one energy storage device (40), the or each switching element (38) and the or each energy storage device (40) in each module (36) arranged to be combinable to selectively provide a voltage source, wherein each module (36) includes a respective sensor (46) that is configured to monitor at least one other of the plurality of modules (36), each sensor (46) configured to selectively detect an occurrence of an operational hazard in the or each corresponding monitored module (36).

Abstract: The present disclosure provides an electrostatic discharge (ESD) protection network for a chip. The chip includes a first power supply pad, a second power supply pad, and a ground pad. The ESD protection network includes: a first ESD protection circuit, located between the first power supply pad and the ground pad, and configured to discharge an electrostatic charge when there is an ESD pulse caused by the electrostatic charge on the first power supply pad; a second ESD protection circuit, located between the second power supply pad and the ground pad, and configured to discharge an electrostatic charge when there is an ESD pulse caused by the electrostatic charge on the second power supply pad; and a third ESD protection circuit, configured to provide a discharge path for an electrostatic charge between the first power supply pad and the second power supply pad.

Abstract: An apparatus may include a regulated power converter, a control engine configured to control the regulated power converter based upon a regulation control parameter, a period detection system and a parameter control system. The period detection system may be configured to monitor a signal to detect transient events at an output of the regulated power converter, wherein the transient events include a first transient event and a second transient event after the first transient event. The period detection system may be configured to determine, in response to the second transient event, a transient event period between the first transient event and the second transient event. The period detection system may be configured to determine transient event period information based upon the transient event period. The parameter control system may be configured to set the regulation control parameter to a value determined based upon the transient event period information.

Abstract: In some embodiments, an electrical device can include a body having a shape that extends along a longitudinal direction, and a set of electrodes implemented on the body at different locations along the longitudinal direction and configured to allow the electrical device to be positioned and mounted to a surface. The set of electrodes can include first and second electrodes configured to provide first and second engagements with the surface, respectively, and to allow a settling motion when the electrical device is positioned on the surface. The set of electrodes can further include a selected electrode having a side configured to allow the settling motion and an engagement portion configured to stop the settling motion and thereby provide a third engagement with the surface.

Abstract: In an embodiment, a HEMT is formed to have a main transistor having a main active area and a sense transistor having a sense active area. An embodiment may include that the main active area is isolated from the sense active area.

Abstract: An electrical plug provides protection against electrical surges with a replaceable surge protector cartridge that is readily removable and replaceable along an exterior of the plug. Surge protector circuitry in the cartridge can absorb an electrical surge received at the plug from an electrical mains source, and the electrical plug can maintain electrical continuity from plug prongs to an electrical cord both before and after the surge protector has absorbed an electrical surge.

Abstract: A low-side contactor coil drive circuit can include an input line and a first solid state switch having a first switch base, a first switch collector, and a first switch emitter. The first switch collector can be connected to the input line and the first switch emitter is connected to ground. The circuit can include a second solid state switch having a second switch base, a second switch collector, and a second switch emitter. The second switch emitter can be connected to the input line in parallel with the first switch collector. The second switch collector can be connected to the first switch base. The circuit can include a third solid state switch having a third switch gate, a third switch source, and a third switch drain. The third switch drain can be connected to the second switch base.

Abstract: A semiconductor device and a method of forming the same are provided. The semiconductor device includes a first substrate, a capacitor within the first substrate, a diode structure within the first substrate adjacent the capacitor, and a first interconnect structure over the capacitor and the diode structure. A first conductive via of the first interconnect structure electrically couples the capacitor to the diode structure.

Abstract: An electrostatic discharge protection system with a node adapted to receive a signal and threshold detecting circuitry coupled to the node. The system includes an IGBT having an IGBT gate coupled to an output of the threshold detecting circuitry, a resistor coupled between an IGBT emitter of the IGBT and a low reference potential node, and a BJT having a BJT base coupled to the IGBT emitter.

Abstract: An input/output driving circuit may include a pad, an open-drain driving circuit, a high-voltage protection unit and a control unit. The pad is for transmitting and receiving signals. The open-drain driving circuit may output a transmission signal to the pad. The high-voltage protection unit may input a received signal from the pad. The control unit may control the open-drain driving circuit and the high-voltage protection unit. The control unit may include a gate control logic, a transmission control logic and an inverter. The gate control logic may receive a voltage of the pad and output a feedback voltage to the open-drain driving circuit. The transmission control logic may receive a clock signal and an enable signal, and transfer a first control signal to the open-drain driving circuit. The inverter may invert the enable signal and transfer an inverted enable signal to the gate control logic.

Abstract: An electrostatic discharge protection circuit includes an electrostatic discharge clamp between a first rail and a second rail, a trigger device configured to activate the electrostatic discharge clamp in response to an electrostatic discharge event, and a charge dissipation element between the first rail and the second rail to dissipate a residual charge at an input of the trigger device.

Abstract: Field effect transistors in an electronic switching device are provided with electrostatic discharge (ESD) protection elements electrically coupled to a first current terminal of each transistor (e.g., a source of each transistor or a drain of each transistor), allowing the electronic switching device to withstand ESD-induced currents without damage to the switching device.

Abstract: A protection device configured for being electrically connected to a test tap of a HV bushing for protecting the bushing from transient overvoltages. The protection device includes at least two parallel connected protection branches connected between the test tap and a ground connector configured for connecting to ground. Each of the protection branches includes a plurality of parallel connected gas discharge tubes, a Transient-Voltage-Suppression (TVS) diode connected in series with the gas discharge tubes, and a resistor connected in series with the gas discharge tubes and across the TVS diode.

Abstract: An ESD clamp circuit has an ESD detection circuit connected between a first terminal and a second terminal, with a first output node and a second output node. The ESD detection circuit is configured to output respective first and second control signals at the first and second output nodes in response to an ESD event. A discharge circuit includes a p-type transistor having a source, a drain and a gate, with the gate connected to the first output node. An n-type transistor has a source, a drain and a gate, with the gate connected to the second output node. The drain is connected to the drain of the p-type transistor. The discharge circuit is configured to establish a first ESD discharge path from the first terminal, through the p-type transistor and the n-type transistor, to the second terminal, and to further establish a second ESD discharge path in parallel with the first ESD discharge path. The second ESD discharge path includes a parasitic silicon controlled rectifier (SCR).

Abstract: The present application discloses a semiconductor device, an electronic system and an electrostatic discharge (ESD) protection method for a semiconductor device thereof. The semiconductor device includes a substrate, an operation solder structure disposed on a first surface of the substrate for receiving an operation signal, a detection solder structure disposed on the first surface of the substrate for receiving a chip connection signal, and a semiconductor chip disposed on a second surface of the substrate. The semiconductor chip includes an operation electrical contact coupled to the operation solder structure, a detection electrical contact coupled to the detection solder structure, an ESD protection unit coupled to the operation electrical contact, and a logic circuit coupled to the detection electrical contact for adjusting capacitance of the ESD protection unit according to the chip connection signal.

Abstract: Disclosed are an electrostatic protection circuit, a display substrate and a display apparatus. The electrostatic protection circuit includes: a plurality of first transistors (11) on a base substrate, each of which includes a gate, an active layer (112), a first electrode (113), a second electrode (114) and a connection part (115). Gates of the first transistors (11) are connected to each other to form a control line (12). The first electrode (113) of each first transistor (11) is electrically connected to a panel crack detect line (PL), the connection part (115) is connected between the first electrode (113) and the second electrode (114), and the active layer (112) and the gate of each first transistor (11) are arranged in an overlapping manner and insulated and separated from each other to form a first capacitor. The control line (12) is electrically connected to a first power supply line (VSS).

Abstract: A first overvoltage protection and reporting system comprises input and output transceivers and input and output surge protection devices coupled respectively to the input and output transceivers. The input surge protection device includes first and second gas discharge tubes coupled to the input transceiver only at, respectively, a first input and a second input. The output surge protection device includes third and fourth gas discharge tubes coupled to the output transceiver only at, respectively, a first and a second output. A second overvoltage protection and reporting system comprises input and output transceivers, a processor coupled between the input and output transceivers, and an output surge protection system that includes a surge protection device coupled to the output transceiver and a sensor receiver coupled between the output transceiver and the processor. The processor detects a failure of the surge protection device based on a signal received from the sensor receiver.

Abstract: A voltage converter delivers an output voltage between a first and a second node. The voltage converter includes a capacitor series-coupled with a resistor between the first and second nodes. The resistor is coupled in parallel with a bidirectional switch receiving at its control terminal a positive bias voltage referenced to the second node.

Abstract: According to one embodiment, an integrated circuit includes a first power supply line, a protection circuit, an internal circuit, a second transistor, and a shutoff control circuit. A first power supply voltage is supplied to the first power supply line. The protection circuit is connected to the first power supply line. The internal circuit includes a first transistor whose breakdown voltage is lower than the first power supply voltage. A drain or a source of the first transistor is connected to the first power supply line. The second transistor is on the first power supply line between the protection circuit and the internal circuit and is configured to switch between conduction and non-conduction states to connect and disconnect the protection circuit and the internal circuit from one another along the first power supply line. The shutoff control circuit is configured to turn off the second transistor during an ESD operation.

Abstract: A method of fabricating a MOS transistor having a thinned channel region is described. The channel region is etched following removal of a dummy gate. The source and drain regions have relatively low resistance with the process.

Abstract: This invention relates to the technical field of harmonic elimination for ferromagnetic resonance for a voltage transformer (abbreviated as PT), in particular, to a harmonic elimination method for ferromagnetic resonance for an active resistance-matching voltage transformer based on PID-adjustment, including compiling a resistance matching algorithm; designing and building a harmonic elimination control system based on the PID control strategy; presetting an active resistance-matching strategy; designing an engineering scheme for placing resistors.

Abstract: In accordance with an embodiment, a semiconductor device includes: an n-doped region disposed over an insulating layer; a p-doped region disposed over the insulating layer adjacent to the n-doped region, where an interface between the n-doped region and the p-doped region form a first diode junction; a plurality of segmented p-type anode regions disposed over the insulating layer, each of the plurality of segmented p-type anode regions being surrounded by the n-doped region, where a doping concentration of the plurality of segmented p-type anode regions is greater than a doping concentration of the p-doped region; and a plurality of segmented n-type cathode regions disposed over the insulating layer. Each of the plurality of segmented n-type cathode regions are surrounded by the p-doped region, where a doping concentration of the plurality of segmented n-type cathode regions is greater than a doping concentration of the n-doped region.

Abstract: The invention relates to a protection for a semi-conductor switch against over voltages. A capacitive element is provided on an inlet connection of the semi-conductor switch. The load amount, which flows into said capacitive element, is integrated in order to trigger a protection function when a threshold value is exceeded.

Abstract: Disclosed are embodiments of a semiconductor structure that includes a semiconductor-controlled rectifier (e.g., for electrostatic discharge (ESD) protection). The SCR can be readily integrated into advanced semiconductor-on-insulator processing technology platforms (e.g., a fully depleted silicon-on-insulator (FDSOI) processing technology platform) that employ hybrid semiconductor substrates (i.e., semiconductor substrates with both bulk semiconductor and semiconductor-on-insulator regions) and is configured with an on-Pwell semiconductor-on-insulator gate structure that is tied to an anode terminal to effectively lower the SCR trigger voltage. To further lower the trigger voltage of the SCR, the Pwell on which the gate structure sits may be made narrower than the gate structure and/or the doping profile of the Pwell on which the gate structure sits may be graded (e.g., P to P? closer to insulator layer).

Abstract: An output circuit included in an integrated circuit may employ multiple protection circuits to protect driver devices from damage during an electrostatic discharge event. One protection circuit clamps a signal port to a ground supply node upon detection of the electrostatic discharge event. Another protection circuit increases the voltage level of a control terminal to one of the driver devices during the electrostatic discharge event to reduce the voltage across the driver device and prevent damage to the device.

Abstract: A control system includes a secondary battery protection apparatus and a device. The secondary battery protection apparatus includes one or more monitoring terminals each provided in a path different from power paths, each monitoring terminal being operable for monitoring a potential at a negative electrode of a given secondary battery cell among a plurality of the secondary battery cells. The secondary battery protection apparatus includes one or more internal switches each of which is provided in an internal line between the negative electrode of a given secondary battery cell and a given monitoring terminal. The device includes a balance control circuit that adjusts, based on potentials monitored by the monitoring terminals, a current flowing into a line path that includes a corresponding internal line. The balance control circuit controls balance among the cell voltages for the secondary battery cells, based on the adjusted current.

Abstract: A multi-stage surge protection device protects against complex, time-variant voltage transients, including those resulting from a high-altitude nuclear electromagnetic pulse or a solar coronal mass ejection. The transient voltage suppressor limits the let-through voltage to a clamping level and provides indication to the crowbar circuit when it is no longer able to do so. Once the clamping level is no longer able to be maintained, the crowbar circuit draws enough current to trip an upstream protective device, such as a breaker or fuse. A low-pass filter can be added to significantly lower the let-through voltage of the device for short-duration pulses, and help to spread the energy to more effectively utilize the transient voltage suppressor.

Abstract: The present invention is a spark gap protection capable of integrating into multiple layer semiconductor substrate packaging. The initial gap in the spark gap is solid and it can be converted into air, meaning gaseous, and the air gap is achieved by having the gap initially be filled with a solid and then running a voltage through the spark gap so that the gap explodes and the solid is replaced by an air cavity.

Abstract: A surge protection apparatus is disclosed. The surge protection apparatus includes a housing; electronics contained in the housing; and a plurality of metal tabs electrically connected to the electronics, the metal tabs being configured to connect to a terminal block of a relay panel in a substation, the metal tabs electrically connecting the terminal block to the electronics to provide EMP surge protection to the relay panel.