Abstract: A user input system includes an optical wave plate assembly a reading device. The optical wave plate assembly includes a phase wave plate and a phase retardation layer. The phase retardation layer is disposed on at least one surface of the phase wave plate. The phase retardation layer includes a code pattern with coordinate information. The optical wave plate assembly converts incident light into at least one of a first polarized light having a first polarization state and a second polarized light having a second polarization state through the phase retardation layer. The first polarization state and the second polarization state are different. The reading device is operated on the optical wave plate assembly for sensing presence or absence of the first polarized light, analyzing a distribution of a change in brightness of the code pattern, and performing a decoding to obtain the coordinate information.

Abstract: Structures and methods allow: transfer of quantum information represented using the states of light to a representation using the states of matter systems; transfer of quantum information represented by the states of matter systems to a representation using the states of light; and error resistant encoding of quantum information using entangled states of matter and light to minimize errors.

Abstract: A photosensitive diode has an active region defining a majority carrier of a first conductivity type and a minority carrier of a second conductivity type. An extraction region is disposed on a first side of the active region and extracts minority carriers from the active region. It also has majority carriers within the extraction region flowing toward the active region in a condition of reverse bias. An exclusion region is disposed on a second side of the active region and has minority carriers within the exclusion region flowing toward the active region. It receives majority carriers from the active region. At least one of the extraction and exclusion region provides a barrier for substantially reducing flow of one of the majority carriers or the minority carriers, whichever is flowing toward the active region, while permitting flow of the other minority carriers or majority carriers flowing out of the active region.

Abstract: In one embodiment, the present invention includes an apparatus having a conductive storage medium to store information in the form of electrostatic charge. The conductive storage medium can be disposed in a non-conductive layer that is formed over a charge blocking layer, which in turn may be disposed over an electrode layer. In one embodiment, a barrier layer may be disposed over the non-conductive layer. Other embodiments are described and claimed.

Abstract: In a production process of a thin film laminate for constituting an organic EL element or the like, a thin film laminate is provided in which no water stays in a thin film formed of a hydrophilic material and, thus, the function of other thin films overlying the surface of the thin film, such as a luminescent layer, is not deteriorated. The thin film laminate comprises: a substrate; and, provided on the substrate in the following order, a first thin film and a second thin film. The first thin film is formed of a hydrophilic organic material. The hydrophilic organic material has hydrophilic groups which have been converted to lipophilic group. The lipophilic groups are partially or wholly returned to hydrophilic groups upon exposure to heat energy or a radiation. The second thin film is formed of a lipophilic organic material.

Abstract: In one embodiment, the present invention includes an apparatus having a conductive storage medium to store information in the form of electrostatic charge. The conductive storage medium can be disposed in a non-conductive layer that is formed over a charge blocking layer, which in turn may be disposed over an electrode layer. In one embodiment, a barrier layer may be disposed over the non-conductive layer. Other embodiments are described and claimed.

Abstract: A CD-ROM has an obscurable section wherein exists a photosensitive mask material layer or constituent operative to alter the optical properties of areas subjected to prolonged exposure to the CD-ROM read laser radiation. Digital information stored on a CD-ROM is made accessible by use of a password, which is generated from user machine unique information, and which is written on the CD-ROM via selective exposure of the CD-ROM to the radiation used to read the CD-ROM.

Abstract: The present invention relates to luminescence materials for an organic electroluminescent device (OELD), and particularly to phenyl pyridine-iridium metal complex compounds of formula (1), and preparation method thereof. In addition, the present invention relates to an organic electroluminescent device using the luminescence materials according to the present invention, which can greatly enhance the efficiency of luminescence and increase the operating life time of the device: wherein R1, R2 and R3 each are the same as defined in the specification.

Abstract: A lamp socket assembly (18) that can be used with a replaceable incandescent lamp (22) in applications where it is desirable or necessary to limit outgassing of the socket assembly. The socket assembly (18) comprises a plastic socket made from polyetherimide, with the socket having an opening (50) to receive a press-sealed end (40) of the incandescent lamp (22). A plurality of electrical contacts (34) are located in the opening (50) and the socket (18) also includes a plurality of terminals (36), each of which is electrically connected to one of the contacts. The socket (18) includes at least one flexible retaining member (52) located at the opening (50) to engage the press-sealed end (40) of the incandescent lamp (22) and thereby retain the lamp within the opening. The socket (18) comprises a housing (30) and a separate body (32) integrally attached to the housing, with both the body and housing being made from the polyetherimide.

Abstract: A solid state image pickup device is provided which performs a new form of image signal reading operation. The image pickup deice comprises a semiconductor substrate and a plurality of pixels that are formed on the semiconductor substrate, with each pixel having a photodetection element, which generates signal charges upon receiving incident light, a first MOS transistor structure, which has a first floating gate that is disposed above the semiconductor substrate and a first control gate that is capacitively coupled to the first floating gate, and a second MOS transistor structure, which has a second floating gate that is disposed above the semiconductor substrate and is electrically connected to the first floating gate and a second control gate that is capacitively coupled to the second floating gate.

Abstract: A solid state memory device is fabricated by forming a level of the device; identifying defective areas in the level; and programming address logic of the level to avoid the defective areas in the level.

Abstract: In an optical memory device, an electroluminescent matrix has a plurality of individually electrically addressable electroluminescent cells, each having a stack of memory cells. The electroluminescent cells are addressable by applying a biased voltage through a grid of light-transparent electrodes.

Abstract: In an optical memory device, an electroluminescent matrix has a plurality of individually electrically addressable electroluminescent cells, each having a stack of memory cells. The electroluminescent cells are addressable by applying a biased voltage through a grid of light-transparent electrodes.

Abstract: Methods and apparatus are described for retrieving information from a storage medium. A first portion of the surface of the storage medium is exposed to stimulating light which diffuses in the storage medium under a second portion of the surface adjacent the first portion. The second portion of the surface is shielded from exposure to the stimulating light. Stimulated light corresponding to the information is received with at least one detector positioned to receive the stimulated light via the second portion of the surface of the storage medium. The stimulated light is released from the storage medium in response to the stimulating light diffused under the second portion of the surface.

Abstract: A non-volatile semiconductor memory device is provided, this device having an electrically rewritable first non-volatile semiconductor memory matrix array and a second such non-volatile semiconductor memory matrix array that has exactly the same construction as and that uses a memory cell of the same construction as that used in the first non-volatile semiconductor memory matrix array, this memory device being capable of execution of selection of at least one of two conditions, one being a writing priority mode condition, in which by erasing data of one of the memory matrix arrays while simultaneously writing data into the other memory matrix array, and the other being a readout priority mode condition, in which an input data inverting circuit is provided for the purpose of programming data into the second memory matrix array that is the inverted data of the first memory matrix array, and in which a differential sense amplifier circuit is provided for the purpose of reading out data of the first and second me

Abstract: There is provided a ferroelectric charge-transport liquid crystal material comprising a liquid crystal compound, the liquid crystal material having a carrier mobility of not less than 10−5 cm2/Vs. There are further provided an image display device, an electroluminescence device, a photoconductor, a space light modulating device, a thin-film transistor, a photosensor, and a photorefractive device each comprising the ferroelectric charge-transport liquid crystal material.

Abstract: Photochromic fluorescent protein moiety having two or more stable states having excitation or emission spectra that are shifted from one wavelength region to another wavelength region in the two states are described. The photochromic material switches between states by irradiation with light of appropriate wavelengths. The two states are preferably stable at room temperature and in the dark. The switching between states can be reversible.

Abstract: In a photoelectric sensor that enables information to be recorded on an information recording medium at an intensity amplified to a level higher than that of a current induced by information exposure and allows conductivity to remain maintained by a continued application of voltage even after termination of the information exposure, so that information can subsequently be recorded on the information recording medium, a photoconductive layer contains a substance that emits fluorescence in a wavelength region in which a charge generation substance-containing layer absorbs light, so that color images can be well recorded on the information recording medium. Also provided is an information recording system using such a photoelectric sensor.

Abstract: A device for optically storing and retrieving information incorporating a cadmium fluoride crystal. Using focused ionizing radiation, patterns can be formed in the crystal by the creation of color centers and/or intrinsic luminescence quenched areas. The stored information can then be retrieved by irradiating the crystal with visible light, ultraviolet light, ionizing radiation or combinations thereof. The device and the storage technique allows the storage of various different levels of information, the different levels being retrievable by using different irradiating media and magnifications of the retrieved information. The device and technique also allows the information to be stored for a predetermined period of time.

Abstract: Methods and apparatii are described for information storage in photoconductive film of single layer composition by irradiation of memory elements simultaneously with application of an electric field. Information is stored as trapped charge accumulations in the film when the irradiation is removed, but trapped charge can be released by subsequent irradiation. Repeated information storage, followed by erasure, returns the films to their original state without degradation.

Abstract: An opto-electronic memory system comprises a memory element (14) in which information is stored in an array of optically readable memory locations (17) and reading means comprising an electro-optic, e.g. liquid crystal, shutter arrangement (10) which is operable to scan the memory element with reading light and an array of linear light sensitive elements (18) disposed adjacent the output side of the shutter arrangement and extending in the scan direction, the light sensitive element array defining a reading surface remote from the shutter arrangement (10) on which the memory element (14) is disposed with the memory locations (17) in close proximity to the light sensitive elements (18) and being operable in a contact sensing mode to sense reading light reflected from the memory locations of the memory element according to the reflectance characteristics of the memory locations.

Abstract: Methods and apparatii are described for information storage in photoconductive film of single layer composition by irradiation of memory elements simultaneously with application of an electric field. Information is stored as trapped charge accumulations in the film when the irradiation is removed, but trapped charge can be released by subsequent irradiation. Repeated information storage, followed by erasure, returns the films to their original state without degradation.

Abstract: An optical disk structure for an erasable optical disk for use with an erasable optical disk drive using electron trapping optical memory media is disclosed in which several distinct layers in addition to the electron trapping optical memory media are utilized in order to minimize light scatter between adjacent tracks on the disk and to carry permanent format and guidance information for use in acccomplishing the write, read and focusing and traking functions of the erasable optical disk drive with which the disk structures are utilized. The use of absorbing layers as part of the optical disk structure for attenuating reflections of light within the disk structure and eliminating the spreading of marks is also disclosed.

Abstract: An improved read/write optical disk is disclosed which is capable of being rewritten more than 10.sup.6 times. The disk utilizes a storage medium in which data is stored by causing a localized region of the storage medium to assume one of two states. The two states can be converted from one to another by the application of electric fields to the localized region of the storage medium. The localized region in question is selected by illuminating an area on an addressing layer directly above the region in question with light. The preferred embodiment utilizes a lead lanthanum zirconate titanate material for the storage medium.

Abstract: An apparatus for manufacturing an optical memory device, which includes supplying rolls for continuously supplying a sheet-like substrate, a masking endless belt having a plurality of windows of size corresponding to the optical memory device, rolls for moving the sheet-like substrate and the masking endless belt in the same direction and at the same speed, a recording portion forming device for forming recording portions on the substrate through the masking endless belt, a guide track providing device for providing along the substrate guide tracks for guiding a light beam, and a cutting device for cutting the substrate to a predetermined size.

Abstract: An erasable electro-optic storage disk for use in focused laser beam operated data handling systems comprises a semiconductor substrate with a storage layer arranged on top of it that is capable of trapping charge carriers. Electric contacts are connected to the semiconductor substrate and to the storage layer, respectively. An energy barrier with associated depletion zone is formed in the substrate near the interface with the storage layer. Upon simultaneous application of a control voltage to the contacts and of a focused laser beam directed at a storage site, electron pairs are generated in the depletion zone, and charge carriers are transferred towards the interface. This causes a reduction of the depletion zone and thus of the voltage over the depletion zone, and an increase of the field in the storage layer, whereby charge carriers are injected into and trapped in the storage layer; method of recording, reading data and apparatus therefor.

Abstract: An optical information recording/reproducing system comprises (A) a recording medium including a recording-bit producing layer, which is comprised of a fluorescent substance, and a photoconductive layer, both layers being interposed between conductive layers, at least one of which is transparent; (B) means for selectively applying a voltage to both sides of the recording medium; (C) means for radiating an optical recording beam to a site on the recording medium while applying a voltage to the recording medium and, then, applying a high electric field to the recording-bit producing layer by way of the photoconductive layer, the resistance of the recording-bit producing layer being lowered at the site, thereby developing a dielectric breakdown and, hence, causing the fluorescent substance to lose the fluorescence, so that information is recorded; and (D) means for radiating an optical reproducing beam on the recording medium without applying any voltage to the recording medium and, then, reproducing information

Abstract: An enhanced optically sensitive medium is disclosed which uses an organic charge transfer complex as the switching material. The organic charge transfer complex includes at least one moiety in an oxidized state. An enhancement mechanism is taught which provides a secondary source of neutral molecules of said at least one constituent moiety in the neutral or altered oxidation state. For example, with CuTCNQ used as the switching material, the erasing characteristics can be improved by using a covering dispersion having a matrix polymer interspersed with neutral molecules of TCNQ.degree..

Abstract: A reference circuit which is particularly useful in combination with a memory array in which data transistors are arranged in rows and columns and in which the conduction paths of the data transistors along each column are connected in series between a common ground line and a bit line forming a stack. A problem exists in that the signal current flowing in a stack varies as a function of the position of a selected data transistor along the stack and of the information stored in the other data transistors of the stack. The reference circuit includes means for generating a different reference current corresponding to each row of data transistors along the stacks, where each reference current mirrors and tracks a particular signal condition of the data transistors being sensed in its corresponding row.

Abstract: A randomly accessible memory display is disclosed wherein a latching memory panel can be placed in direct optical contact with the triggering electroluminescent panel having a similar matrix. Once the glowing light from the trigger panel shines on the photosensitive resistive layer providing positive feedback, the corresponding region in the latching memory panel is latched. In accordance with the invention, a technique is disclosed for electrically reading the latched state in any one cell. This is done by selectively propagating a high frequency sinusoidal interrogation signal through each of the Y axis lines connected to the cells and measuring any phase alteration in each of the X axis lines connected to the cells, for each Y axis line interrogated. Since the resistance of the photosensitive resistor for a particular latching cell is altered if that cell is emitting light, the impedance of the cell is changed, thereby introducing a phase shift to the interrogation signal.

Abstract: A bistable circuit comprises a light-emitting diode connected in series with a phototransistor and so disposed as to illuminate the latter. When current is flowing--i.e. when the phototransistor conducts--light from the LED keeps the phototransistor conductive, and the circuit can be switched to the non-conductive (OFF) state by interrupting the light path between the LED and the phototransistor. When the circuit is OFF it can be switched to the ON state by external light.A data-storage device embodying such bistable circuits is also disclosed; a rotatable disc carries a plurality of such circuits at regular spacings adjacent its periphery, and several setting devices at different positions are each operable to illuminate one of the circuits passing the setting device to switch that circuit to the ON state.

Abstract: A memory pack is provided having a random access memory connected between a positive power source terminal and a ground terminal, an addressing terminal coupled with the random access memory, and a data input/output terminal coupled with the random access memory. The memory pack further includes an LED energizing terminal, a light emission element which is connected between the LED energizing terminal and a positive power source terminal, the LED being lit by an energizing signal applied to the LED energizing terminal, a RAM energizing terminal and a photocoupler which is connected between the RAM energizing terminal and the random access memory and which responds to an energizing signal applied to the RAM energizing terminal to apply an output signal to the random access memory thereby to set the random access memory to be operative.

Abstract: It has been discovered for the practice of this disclosure that there is a threshold for switching with light an AC coupled electroluminescence (EL) device within the .DELTA.V of the luminance-voltage hysteresis loop thereof. Practice of this disclosure provides hybrid matrix-addressing of an electroluminescence display device with memory through luminance-voltage hysteresis by "ANDING" electrical and optical signals. It has particular utility for a large aspect ratio display, e.g., a single line display, i.e., one for which there is more information content in one direction than in another direction.

Abstract: Devices of the nature of magnetic bubble devices, but in which "bits" take the form of light spots, are described. A prototypical device takes the form of an electroluminescent, photoconducting film straddled by orthogonal arrays of insulated strip electrodes forming closely spaced intercept positions so arranged that during operation such intercepts are sequentially biased. A light spot once nucleated--e.g., through a combination of electroinduced and photoinduced luminescence, is stepped by applying bias below nucleation threshold. Devices may serve a variety of memory and/or logic functions.