Radiant Energy Patents (Class 365/106)
  • Patent number: 11057143
    Abstract: Systems and methods for an optical ternary content addressable memory (TCAM) is provided. In various embodiments, one or more search words can be encoded in a multi-wavelength input signal. Each bit position associated with a set of wavelengths of the input signal, each wavelength corresponding to a logic value. A plurality of copies of the input signal can be coupled to an optical search engine comprising a plurality of rows of stored words. In various embodiments, the search word may be encoded in the amplitude of a single wavelength. Each bit position can be associated with a set input waveguides, and a logic value can be encoded based on whether amplitude of the associated wavelength is detected on a respective input waveguide of the set of waveguides. A mismatch of at least one bit is indicated if light is detected on an output of the optical TCAM.
    Type: Grant
    Filed: June 18, 2020
    Date of Patent: July 6, 2021
    Assignee: Hewlett Packard Enterprise Development LP
    Inventors: Thomas Van Vaerenbergh, Can Li, Catherine Graves
  • Patent number: 10700080
    Abstract: A random bit cell includes a random bit cell. The random bit cell includes a volatile memory unit, a first non-volatile memory unit, a second non-volatile memory unit, a first select transistor, and a second select transistor. The first non-volatile memory unit is coupled to a first data terminal of the volatile memory unit, and the second non-volatile memory unit is coupled to a second data terminal of the volatile memory unit. The first select transistor has a first terminal coupled to the first data terminal of the volatile memory unit, a second terminal coupled to a first bit line, and a control terminal coupled to a word line. The second select transistor has a first terminal coupled to the second data terminal of the volatile memory unit, a second terminal coupled to a second bit line, and a control terminal coupled to a word line.
    Type: Grant
    Filed: July 17, 2019
    Date of Patent: June 30, 2020
    Assignee: eMemory Technology Inc.
    Inventors: Chien-Han Wu, Chun-Hung Lu, Chun-Hung Lin, Cheng-Da Huang
  • Patent number: 10599576
    Abstract: Techniques that facilitate hybrid memory access frequency are provided. In one example, a system stores access frequency data for storage class memory and volatile memory in a translation lookaside buffer. The access frequency data is indicative of a frequency of access to the storage class memory and the volatile memory. The system also determines whether to store data in the storage class memory or the volatile memory based on the access frequency data stored in the translation lookaside buffer.
    Type: Grant
    Filed: July 23, 2018
    Date of Patent: March 24, 2020
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Hubertus Franke, Bulent Abali, Damir Anthony Jamsek, Marcio Augusto Silva
  • Patent number: 9984751
    Abstract: A system includes a data storage medium comprising layers, an excitation circuit, and an emitter. Each layer comprises cells arranged in a horizontal plane. Cells in different layers are arranged in a vertical plane of the data storage medium. The excitation circuit excites a layer during excitation period. Exciting the layer changes an optical property of the layer during the excitation period. The emitter emits a first and a second beam onto a first and a second cell of the layer being excited during the excitation period to orient electrical charges within the first and the second cell to a first and second oriented values and their intensity to a first and second intensity values respectively. The first and second cells maintain the first and second oriented values and the first and second intensity values after the excitation period is over or in absence of the layer being excited.
    Type: Grant
    Filed: January 25, 2017
    Date of Patent: May 29, 2018
    Assignee: Seagate Technology LLC
    Inventors: Joachim Ahner, David Marcus Tung
  • Patent number: 9634060
    Abstract: An image sensor includes a first semiconductor chip having a first surface and a second surface, the first semiconductor chip a including an array of unit pixels configured to capture light corresponding to an image and to generate image signals based on the captured light; and a second semiconductor chip having a first surface and a second surface, the second semiconductor chip including first peripheral circuits configured to control the array of pixels and receive the generated image signals, the first peripheral circuits including a vertical scanning circuit, a horizontal scanning circuit, and a signal read-out circuit, the first semiconductor chip being stacked on the second semiconductor chip, the first semiconductor chip not being smaller than the second semiconductor chip.
    Type: Grant
    Filed: February 21, 2014
    Date of Patent: April 25, 2017
    Inventor: Makoto Shizukuishi
  • Patent number: 9536599
    Abstract: A memory device may include an access transistor, and a memory cell configured to store an item of information. The memory cell may include first and second electrodes configured to have different optoelectronic states corresponding respectively to two values of the item of information, and to switch between the different optoelectronic states based upon a control signal external to the memory cell, the different optoelectronic states being naturally stable in an absence of the control signal. The memory cell may also include a solid electrolyte between the first and second electrodes.
    Type: Grant
    Filed: August 29, 2016
    Date of Patent: January 3, 2017
    Assignee: SMICROELECTRONICS (CROLLES 2) SAS
    Inventors: Pierre Caubet, Mickael Gros-Jean
  • Patent number: 9530489
    Abstract: A memory device may include an access transistor, and a memory cell configured to store an item of information. The memory cell may include first and second electrodes configured to have different optoelectronic states corresponding respectively to two values of the item of information, and to switch between the different optoelectronic states based upon a control signal external to the memory cell, the different optoelectronic states being naturally stable in an absence of the control signal. The memory cell may also include a solid electrolyte between the first and second electrodes.
    Type: Grant
    Filed: October 29, 2014
    Date of Patent: December 27, 2016
    Assignee: STMICROELECTRONICS (CROLLES 2) SAS
    Inventors: Pierre Caubet, Mickael Gros-Jean
  • Patent number: 9532030
    Abstract: A three-dimensional scene sensor comprises: a deformable optical system modifying focal distance by control signal, optics imaging the scene by analog image sensor for depths corresponding to distances; the image sensor comprising a matrix of pixels grouped into sub-matrices of macro-pixels being a sub-assembly of pixels, each macro-pixel operating independently for acquisition and reading of data; a matrix of elementary processors, each macro-pixel directly connected to a dedicated processor wherein pixel data for the macro-pixel are transmitted and processed by the processor, each processor carries out, for each pixel, local processing operations calculating depth information for macro-pixel, the processors operating in parallel and independently such that the depth information is processed and calculated in parallel over all macro-pixels of the image sensor, the processors connected to at least one processing unit allowing calculations using high-level input data, calculated starting from the pixel data di
    Type: Grant
    Filed: December 13, 2012
    Date of Patent: December 27, 2016
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Anthony Kolar, Marc Duranton
  • Patent number: 9383550
    Abstract: Embodiments of imaging systems and methods of autofocusing are disclosed, for example, using a folded optics configuration. One system includes at least one camera configured to capture a target image scene, including an image sensor comprising an array of sensor elements, a primary light folding surface configured to direct a portion of received light in a first direction, and an optical element having a secondary light folding surface directing light in a second direction. The system can also include a lens assembly having at least one stationary lens positioned between the secondary light folding surface and the image sensor, the at least one stationary lens having a first surface mechanically coupled to the optical element and a second surface mechanically coupled to the image sensor, and at least one movable lens positioned between the primary light folding surface and the optical element.
    Type: Grant
    Filed: April 1, 2015
    Date of Patent: July 5, 2016
    Assignee: QUALCOMM Incorporated
    Inventor: Thomas Wesley Osborne
  • Patent number: 9136468
    Abstract: According to one embodiment, a nonvolatile semiconductor memory device includes a memory cell which stores data with two or more levels. The memory cell includes a structure includes a first electrode layer, a first semiconductor layer, a phase change film, an electrical insulating layer, a second semiconductor layer, and a second electrode layer arranged in order thereof, and the first semiconductor layer and the second semiconductor layer have carrier polarities different from each other.
    Type: Grant
    Filed: August 5, 2013
    Date of Patent: September 15, 2015
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Tsukasa Nakai, Masaki Kondo, Hiroyoshi Tanimoto, Nobutoshi Aoki
  • Publication number: 20150124513
    Abstract: Disclosed herein is a method of changing characteristics of an electronic device, including the steps of: applying light to an electronic device through a plurality of media having different refractive indexes from each other, the electrical characteristics of the electronic device being changed depending on the amount of incident light; and changing an incident angle of light applied the electronic device to adjust the amount of incident light. There is provided a method of providing light incident angle dependency by a simple procedure of accumulating additional media in various electronic devices. In the method, the light incident angle selectivity of the electronic device can be maintained even when the inclination angle of the device is changed depending on the axis parallel to the incident direction of light even though the incident direction thereof is fixed.
    Type: Application
    Filed: August 21, 2014
    Publication date: May 7, 2015
    Inventors: Kijung YONG, Jinjoo PARK
  • Patent number: 8891282
    Abstract: A quantum memory and method are proposed. The quantum memory includes an ensemble of atoms embedded in a storage medium and at least one light source for emitting towards the storage medium first, second and third light pulses, the first light pulse carrying information to be stored. The at least one light source is adapted for emitting second and third light pulses which are such that a photon echo substantially carrying information stored by the first light pulse is emitted by the ensemble of atoms after emission of the third light pulse.
    Type: Grant
    Filed: April 24, 2012
    Date of Patent: November 18, 2014
    Assignee: Centre National de la Recherche Scientifique
    Inventors: Jean-Louis Le Gouet, Thierry Chaneliere
  • Patent number: 8630109
    Abstract: A memory cell includes a light emitting unit, a phosphorescent layer, a polarization filter and a light detecting unit. The light emitting unit selectively generates a first light signal in response to a write data. The phosphorescent layer generates a second light signal using an energy absorbed from the first light signal. The polarization filter either passes the second light signal to output the passed second light signal as a third light signal or blocks out the second light signal in response to the write data. The light detecting unit generates a read data by detecting the third light signal.
    Type: Grant
    Filed: March 28, 2012
    Date of Patent: January 14, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Young-Jin Park
  • Publication number: 20140009995
    Abstract: An integrated circuit device (20, 60) includes a plurality of memory cells (22), which are configured to store data. Multiple P-N junctions (24) are arranged so that a single, respective P-N junction is disposed in proximity to each memory cell and is configured to emit optical radiation during readout from the memory cell with a wavelength matching an emission wavelength of the memory cell.
    Type: Application
    Filed: February 19, 2012
    Publication date: January 9, 2014
    Applicant: Cisco Technology Inc.
    Inventors: Lior Amarilio, Uri Bear, Reuven Elbaum, Yigal Shapiro, Chain D. Shen-Orr, Yonatan Shlomovich, Zvi Shkedy
  • Publication number: 20130301333
    Abstract: A photonic quantum memory is provided. The photonic quantum memory includes entanglement basis conversion module configured to receive a first polarization-entangled photon pair and to produce a second entangled photon pair. The second polarization-entangled photon pair can he a time-bin entangled or a propagation direction-entangled photon pair. The photonic quantum memory further includes a photonic storage configured to receive the second entangled photon pair from the basis conversion module and to store the second entangled photon pair.
    Type: Application
    Filed: April 3, 2013
    Publication date: November 14, 2013
    Applicant: The MITRE Corporation
    Inventors: Gerald N. GILBERT, Jonathan S. HODGES, Stephen Peter PAPPAS, Yaakov Shmuel WEINSTEIN
  • Publication number: 20130279235
    Abstract: A quantum memory and method are proposed. The quantum memory includes an ensemble of atoms embedded in a storage medium and at least one light source for emitting towards the storage medium first, second and third light pulses, the first light pulse carrying information to be stored. The at least one light source is adapted for emitting second and third light pulses which are such that a photon echo substantially carrying information stored by the first light pulse is emitted by the ensemble of atoms after emission of the third light pulse.
    Type: Application
    Filed: April 24, 2012
    Publication date: October 24, 2013
    Applicant: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
    Inventors: Jean-Louis Le Gouet, Thierry Chaneliere
  • Patent number: 8542518
    Abstract: An optically-controlled memory resistor includes (1) a memory resistor having a first electrode, a second electrode, and a photo-responsive active layer disposed between the first and second electrodes and (2) a light source in cooperation with the memory resistor. The light source is configured to controllably illuminate the memory resistor for affecting a resistance state exhibited by the memory resistor. Also, a method for operating a memory resistor includes changing a resistance state of the memory resistor in response to an application of photons to the memory resistor.
    Type: Grant
    Filed: March 31, 2010
    Date of Patent: September 24, 2013
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Alexandre M. Bratkovski, Iakov Veniaminovitch Kopelevitch
  • Publication number: 20130163307
    Abstract: A memory device automatically correcting the effect of collisions of high-energy particles, comprising at least one memory cell, and further comprising: retention means for retaining, for a determined period, a single copy of the stored value stored in said memory cell; detection means for detecting a change of state of said memory cell, by comparing the stored value stored in said memory cell with the value in retention in said retention means; and management means suitable for determining whether a detected change of state of said memory cell is due to a high-energy particle and, in which case, to automatically command a reloading of the stored value stored in said retention means into said memory cell.
    Type: Application
    Filed: June 22, 2012
    Publication date: June 27, 2013
    Applicant: THALES
    Inventors: Bruno JACQUET, Raoul RODRIGUEZ, Vincent LAVALETTE
  • Patent number: 8437168
    Abstract: A Josephson quantum computing device and an integrated circuit using Josephson quantum computing devices which can realize a NOT gate operation controlled with 2 bits will be provided. The Josephson quantum computing device (1) comprises: a superconducting ring member (10) having a ?-junction (6) and a 0-junction (7); and a quantum state detecting member (20) constituted by a superconducting quantum interference device arranged outside of the superconducting ring member, wherein a bonding and an antibonding state brought about by a tunneling effect between a |?> and a |?> state as two states degenerate in energy of the superconducting ring member (10) are regarded as quantum bits. The bonding and antibonding states as the quantum bits are read out by the quantum state detecting member (20). The two bit controlled NOT gate operation can be performed by the two quantum bits comprising said quantum bits.
    Type: Grant
    Filed: September 7, 2012
    Date of Patent: May 7, 2013
    Assignee: Japan Science and Technology Agency
    Inventors: Sadamichi Maekawa, Taro Yamashita, Saburo Takahashi
  • Patent number: 8379438
    Abstract: An electronic device comprising a heat transfer structure and a phase change structure which is convertible between two phase states by heating, wherein the phase change structure is electrically conductive in at least one of the two phase states, wherein the heat transfer structure is arranged to be heated by radiation impinging on the heat transfer structure, wherein the phase change structure is thermally coupled to the heat transfer structure so that the phase change structure is convertible between the two phase states when the radiation impinges on the heat transfer structure.
    Type: Grant
    Filed: March 19, 2008
    Date of Patent: February 19, 2013
    Assignee: NXP B.V.
    Inventors: David Tio Castro, Karen Attenborough
  • Patent number: 8320173
    Abstract: In some embodiments, a memory cell includes a transistor gate spaced from a channel region by gate dielectric; a source region on one side of the channel region; and a drain region on an opposing side of the channel region from the source region. The channel region has phase change material adjacent the drain region. In some embodiments, the phase change material may be adjacent both the source region and the drain region. Some embodiments include methods of programming a memory cell that has phase change material adjacent a drain region. An inversion layer is formed within the channel region adjacent the gate dielectric, with the inversion layer having a pinch-off region within the phase change material adjacent the drain region. Hot carriers (for instance, electrons) within the pinch-off region are utilized to change a phase within the phase change material.
    Type: Grant
    Filed: May 3, 2012
    Date of Patent: November 27, 2012
    Assignee: Micron Technology, Inc.
    Inventor: Jun Liu
  • Patent number: 8284585
    Abstract: A Josephson quantum computing device and an integrated circuit using Josephson quantum computing devices which can realize a NOT gate operation controlled with 2 bits will be provided. The Josephson quantum computing device (1) comprises: a superconducting ring member (10) having a ?-junction (6) and a 0-junction (7); and a quantum state detecting member (20) constituted by a superconducting quantum interference device arranged outside of the superconducting ring member, wherein a bonding and an antibonding state brought about by a tunneling effect between a |?> and a |?> state as two states degenerate in energy of the superconducting ring member (10) are regarded as quantum bits. The bonding and antibonding states as the quantum bits are read out by the quantum state detecting member (20). The two bit controlled NOT gate operation can be performed by the two quantum bits comprising said quantum bits.
    Type: Grant
    Filed: July 25, 2005
    Date of Patent: October 9, 2012
    Assignee: Japan Science and Technology Agency
    Inventors: Sadamichi Maekawa, Taro Yamashita, Saburo Takahashi
  • Publication number: 20120250390
    Abstract: A memory cell includes a light emitting unit, a phosphorescent layer, a polarization filter and a light detecting unit. The light emitting unit selectively generates a first light signal in response to a write data. The phosphorescent layer generates a second light signal using an energy absorbed from the first light signal. The polarization filter either passes the second light signal to output the passed second light signal as a third light signal or blocks out the second light signal in response to the write data. The light detecting unit generates a read data by detecting the third light signal.
    Type: Application
    Filed: March 28, 2012
    Publication date: October 4, 2012
    Inventor: Young-Jin PARK
  • Patent number: 8218351
    Abstract: A non-volatile electrochemical memory cell formed of a stack of thin films comprising at least one first active layer, suited to releasing and accepting, in a reversible manner, at least one ion species, at least one second active layer, suited to releasing and accepting said ion species, in a reversible manner, the active layers being based on materials having different compositions and electrochemical potential profiles.
    Type: Grant
    Filed: February 26, 2009
    Date of Patent: July 10, 2012
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Didier Bloch, Carole Bourbon, Frédéric Le Cras, Antoine Nowodzinski
  • Patent number: 8189375
    Abstract: In some embodiments, a memory cell includes a transistor gate spaced from a channel region by gate dielectric; a source region on one side of the channel region; and a drain region on an opposing side of the channel region from the source region. The channel region has phase change material adjacent the drain region. In some embodiments, the phase change material may be adjacent both the source region and the drain region. Some embodiments include methods of programming a memory cell that has phase change material adjacent a drain region. An inversion layer is formed within the channel region adjacent the gate dielectric, with the inversion layer having a pinch-off region within the phase change material adjacent the drain region. Hot carriers (for instance, electrons) within the pinch-off region are utilized to change a phase within the phase change material.
    Type: Grant
    Filed: November 16, 2011
    Date of Patent: May 29, 2012
    Assignee: Micron Technology, Inc.
    Inventor: Jun Liu
  • Patent number: 8130533
    Abstract: A system, device and method for electrically addressing an element include providing a thermoelectric layer in proximity with an area to be addressed and positioning a probe in proximity of the thermoelectric layer. Electrical activity is induced in the thermoelectric layer by applying heat from the probe. A response is caused in the area to be addressed.
    Type: Grant
    Filed: October 3, 2008
    Date of Patent: March 6, 2012
    Assignee: International Business Machines Corporation
    Inventors: Rachel Cannara, Bernd W. Gotsmann
  • Patent number: 8080817
    Abstract: In some embodiments, a memory cell includes a transistor gate spaced from a channel region by gate dielectric; a source region on one side of the channel region; and a drain region on an opposing side of the channel region from the source region. The channel region has phase change material adjacent the drain region. In some embodiments, the phase change material may be adjacent both the source region and the drain region. Some embodiments include methods of programming a memory cell that has phase change material adjacent a drain region. An inversion layer is formed within the channel region adjacent the gate dielectric, with the inversion layer having a pinch-off region within the phase change material adjacent the drain region. Hot carriers (for instance, electrons) within the pinch-off region are utilized to change a phase within the phase change material.
    Type: Grant
    Filed: January 3, 2011
    Date of Patent: December 20, 2011
    Assignee: Micron Technology, Inc.
    Inventor: Jun Liu
  • Publication number: 20110299317
    Abstract: In a system having a memory device, an event is detected during system operation. The memory device is heated to reverse use-incurred degradation of the memory device in response to detecting the event. In another system, the memory device is heated to reverse use-incurred degradation concurrently with execution of a data access operation within another memory device of the system. In another system having a memory controller coupled to first and second memory devices, data is evacuated from the first memory device to the second memory device in response to determining that a maintenance operation is needed within the first memory device.
    Type: Application
    Filed: August 19, 2010
    Publication date: December 8, 2011
    Inventors: Ian P. Shaeffer, Gary B. Bronner, Brent S. Haukness, Kevin S. Donnelly, Frederick A. Ware, Mark A. Horowitz
  • Publication number: 20110185245
    Abstract: To produce a memory which resists ion or photon attack, a memory structure is chosen whose memory point behaves asymmetrically with regard to these attacks. It is shown that in this case, it is sufficient to have a reference cell for an identical and periodic storage structure in order to be able to correct all the memory cells assailed by an attack. An error correction efficiency of ½ is thus obtained, with a simple redundancy, whereas the conventional methods make provision, for the same result, to triple the storage, to obtain a less beneficial efficiency of ?.
    Type: Application
    Filed: June 18, 2009
    Publication date: July 28, 2011
    Applicant: European Aeronautic Defence And Space Company EADS France
    Inventors: Florent Miller, Thierry Carriere, Antonin Bougerol
  • Patent number: 7974123
    Abstract: Using a synthetic molecular spring device in a system for dynamically controlling a system property, such as momentum, topography, and electronic behavior. System features (a) the synthetic molecular spring device having (i) at least one synthetic molecular assembly each featuring at least one chemical unit including at least one: (1) atom; (2) complexing group complexed to at least one atom; (3) axial ligand reversibly physicochemically paired with at least one complexed atom; and (4) substantially elastic molecular linker; and, (ii) an activating mechanism directed to at least one atom-axial ligand pair; and, (b) a selected unit operatively coupled to synthetic molecular assembly, and exhibiting the system property.
    Type: Grant
    Filed: February 25, 2008
    Date of Patent: July 5, 2011
    Assignee: Yeda Research and Development Co. Ltd.
    Inventors: Roie Yerushalmi, Avigdor Scherz
  • Patent number: 7952796
    Abstract: The present invention provides a quantum optical data storage protocol, whose storage time is lengthened by spin population decay time from several minutes to several hours.
    Type: Grant
    Filed: November 20, 2008
    Date of Patent: May 31, 2011
    Assignee: Inha-Industry Partnership Institute
    Inventor: Byoung-Seung Ham
  • Publication number: 20110110158
    Abstract: A mass storage device that utilizes one or more solid-state memory components to store data for a host system, and a method for increasing the write endurance of the memory components. The memory components are periodically heated above an intrinsic operating temperature thereof to a preselected temperature that is sufficient to thermally recondition the memory component in a manner that increases the write endurance of the memory component.
    Type: Application
    Filed: November 10, 2010
    Publication date: May 12, 2011
    Applicant: OCZ TECHNOLOGY GROUP, INC.
    Inventor: Franz Michael Schuette
  • Patent number: 7903445
    Abstract: Provided are a photonic memory device, a method of storing data using the photonic memory device, and a photonic sensor device. The photonic memory device comprises a signal line through which a photon is input; a ring resonator receiving a photon through an input gap that is adjacent to the signal line and storing the photon; and a detect line outputting the photon stored in the ring resonator through an output gap that is adjacent to the ring resonator, wherein data is read/written and stored/deleted by the input/output of the photon.
    Type: Grant
    Filed: December 18, 2006
    Date of Patent: March 8, 2011
    Assignee: LG Electronics, Inc.
    Inventors: Byung-Youn Song, Jung-Hoon Lee
  • Patent number: 7830695
    Abstract: A capacitive operation method for quantum computing is disclosed where providing a sequence of write pulses above a threshold voltage induces a single charge population, forming a quantum dot (Q-dot). Determining if the single charge population was induced in the Q-dot occurs by monitoring capacitance changes while the writing is performed. Q-bits (Q-dot pairs) are formed without requiring a separate transistor for each Q-dot by multiplexing the calibration. A device which is able to perform the above method is also disclosed. The device utilizes the ability of cryogenic capacitance bridge circuits to measure the capacitance change caused by the introduction of a single charge population to a Q-dot. The device also permits swapping of Q-dot and Q-bit pairs utilizing a signal multiplexed with the voltage pulses that write (e.g. change the charge population) to the Q-dots.
    Type: Grant
    Filed: October 29, 2007
    Date of Patent: November 9, 2010
    Assignee: HRL Laboratories
    Inventor: Jeong-Sun Moon
  • Patent number: 7830702
    Abstract: Synthetic molecular spring device featuring: (a) a synthetic molecular assembly, SMA, each scalable chemical module including: (i) at least one atom, M, (ii) at least one complexing group, CG, complexed to an atom, M, (iii) at least one axial ligand, AL, reversibly physicochemically paired with at least one atom, M, complexed to a complexing group, CG, (iv) at least one substantially elastic molecular linker, ML, having body and two ends with at least one chemically bonded to another component of SMA; (b) activating mechanism, AM, operatively directed to an atom-axial ligand pair, whereby following activating mechanism, AM, sending activating signal, AS/AS?, to an atom-axial ligand pair for physicochemically modifying the atom-axial ligand pair, there is activating at least one cycle of spring-type elastic reversible transitions between contracted and expanded linear conformational states of molecular linker, ML. Optionally includes (v) chemical connectors, CC, and/or, (vi) binding sites, BS.
    Type: Grant
    Filed: March 12, 2002
    Date of Patent: November 9, 2010
    Assignee: Yeda Research And Development Co. Ltd.
    Inventors: Roie Yerushalmi, Avigdor Scherz
  • Patent number: 7826287
    Abstract: The method of and apparatus for testing a floating gate non-volatile memory semiconductor device comprising an array of cells including floating gates for storing data in the form of electrical charge. The method includes applying a test pattern of said electrical charge to the floating gates, exposing the device to energy to accelerate leakage of the electrical charges out of the cells, and subsequently comparing the remaining electrical charges in the cells to the test pattern. The energy is applied in the form of electromagnetic radiation of a wavelength such as to excite the charges in the floating gates to an energy level sufficient for accelerating charge loss from the floating gates of defective cells relative to charge loss from non-defective cells. The wavelength is preferably in the range of 440 to 560 nm.
    Type: Grant
    Filed: February 24, 2006
    Date of Patent: November 2, 2010
    Assignee: Freescale Semiconductor, Inc.
    Inventors: Laurence Morancho-Montagner, Jean-Louis Chaptal, Serge De Bortoli, Gerard Sarrabayrouse
  • Patent number: 7719729
    Abstract: A method for a film transfer device includes receiving a digital image in the film transfer device, wherein the digital image comprises a plurality of square pixels, wherein the digital image comprises a first number of pixels in a horizontal direction and a second number of pixels in a vertical direction, and wherein the digital image comprises a non-anamorphic version of an image, and optically converting the digital image into an optical output image to film media in the film transfer device, wherein the optical output image is associated with a plurality of non-square pixels, wherein the optical output image is associated with the first number of pixels in the horizontal direction and the second number of pixels in the vertical direction, and wherein the optical output image comprises an anamorphic version of the image.
    Type: Grant
    Filed: November 3, 2004
    Date of Patent: May 18, 2010
    Assignee: Pixar
    Inventors: Babak Sanii, James R. Burgess
  • Patent number: 7684232
    Abstract: A memory cell stores a data bit value despite atomic radiation. The memory cell includes two inverters, an access circuit, and two switch circuits. Each inverter has an input and an output. The access circuit is arranged to write and read the data bit value in the memory cell. The switch circuits cross couple the outputs of the two inverters to the inputs of the two inverters. The switch circuits are arranged to alternately decouple and couple the inputs of the two inverters to limit corruption from atomic radiation of the data bit value in the memory cell.
    Type: Grant
    Filed: September 11, 2007
    Date of Patent: March 23, 2010
    Assignee: XILINX, Inc.
    Inventor: Austin H. Lesea
  • Publication number: 20100061138
    Abstract: Provided are a photonic memory device, a method of storing data using the photonic memory device, and a photonic sensor device. The photonic memory device comprises a signal line through which a photon is input; a ring resonator receiving a photon through an input gap that is adjacent to the signal line and storing the photon; and a detect line outputting the photon stored in the ring resonator through an output gap that is adjacent to the ring resonator, wherein data is read/written and stored/deleted by the input/output of the photon.
    Type: Application
    Filed: December 18, 2006
    Publication date: March 11, 2010
    Inventors: Byung-Youn Song, Jung-Hoon Lee
  • Patent number: 7667995
    Abstract: A method for creating a logic state for teleporting quantum information using a single photon is described. The method includes receiving a photon with an initial polarization and causing a first semiconductor crystal to have a first spin orientation. The photon interacts with the first semiconductor crystal for producing a resulting polarization dependent upon the first spin orientation. Causing the photon to interact with the first semiconductor crystal generates a maximally entangled state.
    Type: Grant
    Filed: February 9, 2006
    Date of Patent: February 23, 2010
    Assignees: University of Iowa Research Foundation, The Regents of the University of California
    Inventors: Michael N. Leuenberger, Michael E. Flatté, David D. Awschalom
  • Publication number: 20100034007
    Abstract: The present invention provides a quantum optical data storage protocol, whose storage time is lengthened by spin population decay time from several minutes to several hours.
    Type: Application
    Filed: November 20, 2008
    Publication date: February 11, 2010
    Applicant: INHA-INDUSTRY PARTNERSHIP INSTITUTE
    Inventor: Byoung Seung Ham
  • Patent number: 7626842
    Abstract: A memory device includes a bit cell including an adjustable transmittance component having a first side and a second side. The adjustable transmittance component has an adjustable transmittance state representative of a bit value of the bit cell. The memory device further includes a photon detector optically coupled to a second side of the adjustable transmittance component. A technique related to the memory device includes determining a transmittance state of the adjustable transmittance component and providing a bit value for the bit cell based on the transmittance state. Another technique related to the memory device includes determining a bit value to be stored at the bit cell and configuring the adjustable transmittance component to have a transmittance state corresponding to the bit value.
    Type: Grant
    Filed: November 16, 2006
    Date of Patent: December 1, 2009
    Assignee: Freescale Semiconductor, Inc.
    Inventor: Ravindraraj Ramaraju
  • Publication number: 20090118583
    Abstract: A switching mechanism is used for altering the operation of an electronic device. The switching mechanism has a memory comprising a plurality of memory cells. Each memory cell undergoes a change in binary data upon receiving more than a specific amount of light having a specific wavelength. The operation is altered when the binary data of at least one memory cell of the plurality of memory cells is changed by the light.
    Type: Application
    Filed: November 4, 2008
    Publication date: May 7, 2009
    Applicant: HOYA CORPORATION
    Inventor: Kentaro MATSUMOTO
  • Patent number: 7426028
    Abstract: Optical breakdown by predetermined laser pulses in transparent dielectrics produces an ionized region of dense plasma confined within the bulk of the material. Such an ionized region is responsible for broadband radiation that accompanies a desired breakdown process. Spectroscopic monitoring of the accompanying light in real-time is utilized to ascertain the morphology of the radiated interaction volume. Such a method and apparatus as presented herein, provides commercial realization of rapid prototyping of optoelectronic devices, optical three-dimensional data storage devices, and waveguide writing.
    Type: Grant
    Filed: March 14, 2006
    Date of Patent: September 16, 2008
    Assignee: Lawrence Livermore National Security, LLC
    Inventors: Christopher W. Carr, Stavros Demos, Michael D. Feit, Alexander M. Rubenchik
  • Publication number: 20080212357
    Abstract: A memory device including a simultaneous read circuit design for multiple memory cells on a single interconnect using a fast fourier transform analysis circuit. The simultaneous read circuit can be used with any memory type storing information as an energy-absorbing state.
    Type: Application
    Filed: February 28, 2008
    Publication date: September 4, 2008
    Inventors: Kristy A. Campbell, Terry L. Gilton
  • Patent number: 7385209
    Abstract: Ion beam lithography technique wherein a higher amount of radiation energy is deposited to predetermined regions in the bulk if a suitable substrate. By selecting the radiation nature, its energy and the irradiation parameters a structure can be created in the bulk of the material leaving the surface essentially untouched.
    Type: Grant
    Filed: October 24, 2005
    Date of Patent: June 10, 2008
    Assignee: Haute Ecole Arc Ne-Be-Ju
    Inventors: Samuel Jaccard, Serguei Mikhailov, Frans Munnik
  • Publication number: 20080117662
    Abstract: A memory device includes a bit cell including an adjustable transmittance component having a first side and a second side. The adjustable transmittance component has an adjustable transmittance state representative of a bit value of the bit cell. The memory device further includes a photon detector optically coupled to a second side of the adjustable transmittance component. A technique related to the memory device includes determining a transmittance state of the adjustable transmittance component and providing a bit value for the bit cell based on the transmittance state. Another technique related to the memory device includes determining a bit value to be stored at the bit cell and configuring the adjustable transmittance component to have a transmittance state corresponding to the bit value.
    Type: Application
    Filed: November 16, 2006
    Publication date: May 22, 2008
    Applicant: FREESCALE SEMICONDUCTOR, INC.
    Inventor: Ravindraraj Ramaraju
  • Patent number: 7307781
    Abstract: Techniques for reconfiguring spectral features stored in a medium based on a two-state atomic system with transition dipole moment ? includes causing a chirp to pass into the medium. The chirp includes a monochromatic frequency that varies in time by a chirp rate ? over a frequency band BR during a time interval TR. The amplitude AR of the chirp is constant over BR and equal to AR=(hbar/??)?{square root over ((? ln [2/?]))}, The term hbar is reduced Plank's constant, ln is a natural logarithm function, and ? is a ratio of a circumference of a circle to a diameter of the circle. For ?<<1, the atomic-state populations in the two states are inverted. For ?=1, prior atomic-state populations are erased, with final populations equal in the two states, regardless of populations before erasure.
    Type: Grant
    Filed: July 14, 2006
    Date of Patent: December 11, 2007
    Assignee: Montana State University
    Inventors: Tiejun Chang, Mingzhen Tian, William R. Babbitt, Kristian D. Merkel
  • Patent number: 7304888
    Abstract: A memory array having memory cells each comprising a diode and a phase change material or antifuse is reliably programmed by maintaining all word lines and bit lines connected to unselected memory cells at intermediate voltages and applying voltages to place the diode of a selected cell or cells in a reverse biased state and sufficient to program the phase change material or antifuse. Thus leakage through unselected cells is low so power wasted is small, and assurance is high that no unselected memory cells are disturbed.
    Type: Grant
    Filed: July 1, 2005
    Date of Patent: December 4, 2007
    Assignee: Sandisk 3D LLC
    Inventor: N. Johan Knall
  • Patent number: 7199343
    Abstract: A device for storing photons between one and a plurality of reflected surfaces, and the storage of information, in particular in the form of digital data, being provided by creating at least one circulating memory using the storage device as a delay line. Each device consists of one or a plurality of photon sources, using any wavelength of light, one or a plurality of photon detectors and one or a plurality of reflective surfaces. The injected photons are delayed from reaching the output by one or a plurality of reflections from one surface of the device to the same or another surface of the device, each reflection extending the distance traveled for each photon, thereby inducing a delay.
    Type: Grant
    Filed: January 19, 2005
    Date of Patent: April 3, 2007
    Inventor: Nile Mosley