Abstract: A semiconductor device including pixels arranged in a matrix of n rows and m columns, in which the pixels in the m-th column are shielded from light, is provided.

Abstract: Implementations disclosed herein provide a targeted messaging service that interfaces with a targeted messaging client on a device. The targeted messaging service provides a user-specific package to the client that specifies which native controls to invoke in response to which triggering events, as well as the assets to deploy in the controls. The targeted messaging client, which runs in the context of the native application it is supporting, receives the package from the service and monitors for the events that trigger targeted messages. A targeted control is formed by an existing native control combined with a specific asset provided in the package. When a given event occurs, the targeted messaging client merges the asset with the native control and displays the resulting targeted control in a user interface to the application.

Abstract: A sensor element for sensing optical light may be provided. The sensor element may include a first electrode for electrically coupling to a first supply voltage, a second electrode for electrically coupling to a second supply voltage, and an oxide dielectric element between the first electrode and the second electrode. The oxide dielectric element may be configured to form a conductive filament upon a potential difference between the first supply voltage and the second supply voltage exceeding a threshold level, thereby decreasing a resistance of the oxide dielectric element. The sensor element may also include a detector. The first electrode may be configured to allow the optical light to pass through the first electrode to the oxide dielectric element. The detector may be configured to detect an increase in the resistance of the oxide dielectric element upon the oxide dielectric element receiving the optical light.

Abstract: A charging member includes a support, a conductive elastic layer disposed on the support, and a surface layer disposed on the conductive elastic layer. Domains with current values of 2.5 pA or more have an average size of about 300 nm or less in a binary image created using a current value of 2.5 pA as a threshold from current measured by contacting a conical probe having a tip diameter of 20 nm with an outer surface of the surface layer and applying a voltage of 3 V between the conical probe and the support while moving the conical probe.

Abstract: A high radio frequency transmission line having a dielectric substrate with two sides and constructed of a transparent material. An electrically conductive strip extends along at least a portion of one side of the substrate. An electrically conductive film is deposited on one of the sides of the substrate at a position spaced from the conductive strip. This conductive film has a thickness sufficiently small so that the film is substantially transparent.

Abstract: An optically controlled read only memory is disclosed. The optically controlled read only memory includes a substrate, a plurality of memory cells having optical sensors disposed on the substrate, and at least one shielding structure disposed on the optical sensor, in which the shielding structure selectively shields a portion of the optical sensor according to a predetermined layout. Preferably, the optically controlled read only memory of the present invention is capable of providing two types or more program codes and outputting different program codes carrying different function under different lighting condition.

Abstract: A semiconductor integrated circuit capable of protection from card hacking, by which erroneous actions are actively induced by irradiation with light and protected secret information is illegitimately acquired, is to be provided. Photodetectors, configured by a standard logic process, hardly distinguishable from other circuits and consumes very little standby power, are mounted on a semiconductor integrated circuit, such as an IC card microcomputer. Each of the photodetectors, for instance, has a configuration in which a first state is held in a static latch by its initializing action and reversal to a second state takes place when semiconductor elements in a state of non-conduction, constituting the static latch of the first state, is irradiated with light. A plurality of photodetectors are arranged in a memory cell array. By incorporating the static latch type photodetector into the memory array, they can be arranged inconspicuously.

Abstract: Loadless 4 transistor SRAM cell operation can be substantially improved, yielding area saving and more stable operation by use of optical-light load. Parasitic photocurrents in PMOS anodes-substrate junctions act as load currents. Light can be introduced by either ambient light through transparent window on top of the chip or by cheap LED diode attached to chip surface.

Abstract: A micro-switching element provided with a first electrode 4 containing an ionic conductor and a second electrode 5 composed of an electric conductor, wherein the first electrode 4 and the second electrode 5 are physically and electrically connected to each other through deposition of a metal ion from the ionic conductor, and wherein a photoresponsive film 9 that receives light to generate a carrier is disposed between the first electrode 4 and the second electrode 5 to fill up the space between the electrodes. Accordingly, a micro-switching element is provided of which the characteristic fluctuation is small and which hardly produces a problem of operation failure.

Abstract: An optical sensor element has a gate electrode opposed to a semiconductor layer made of an oxide semiconductor via a gate insulating film, source and drain electrodes being connected to the semiconductor layer, wherein the amount of light received by the semiconductor layer is read out as a drain current which changes in a non-volatile manner relative to a gate voltage.

Abstract: [PROBLEMS] To provide a reconfiguration controller of an optically reconfigurable gate array for correctly and reliably writing various types of logical operation circuits of an optically reconfigurable gate array and performing high-speed logical operation by quickly starting up the circuits.

Abstract: Optically-coupled memory systems are disclosed. In one embodiment, a system memory includes a carrier substrate, and a controller attached to the carrier substrate and operable to transmit and receive optical signals, and first and second memory modules. The module substrate of the first memory module has an aperture formed therein, the aperture being operable to provide an optical path for optical signals between the controller and an optical transmitter/receiver unit of the second memory module. Thus, the system memory provides the advantages of “free space” optical connection in a compact arrangement of memory modules. In an alternate embodiment, the first memory module includes a beam splitter attached to the module substrate proximate the aperture. In another embodiment, the first and second memory modules are staged on the carrier substrate to provide an unobstructed path for optical signals.

Abstract: An optically-controlled memory resistor, comprising (1) a memory resistor comprising a first electrode, a second electrode, and a photo-responsive active layer disposed between the first and second electrodes, and (2) a light source in cooperation with the memory resistor, the light source configured to controllably illuminate the memory resistor for affecting a resistance state exhibited by the memory resistor. Also disclosed is a method for operating a memory resistor, the method comprising changing a resistance state of the memory resistor in response to an application of a plurality of photons to the memory resistor.

Abstract: A detector circuit for detecting an external manipulation of an electrical circuit. The detector circuit includes a digital circuit which is sensitive to at least one of the effects of ionizing radiation or fluctuations of a supply voltage, and the output state of the digital circuit is indicative of an attack.

Abstract: Provided are a photonic memory device, a method of storing data using the photonic memory device, and a photonic sensor device. The photonic memory device comprises a signal line through which a photon is input; a ring resonator receiving a photon through an input gap that is adjacent to the signal line and storing the photon; and a detect line outputting the photon stored in the ring resonator through an output gap that is adjacent to the ring resonator, wherein data is read/written and stored/deleted by the input/output of the photon.

Abstract: Colloidal-processed Si particle devices, device fabrication, and device uses have been presented. The generic device includes a substrate, a first electrode overlying the substrate, a second electrode overlying the substrate, laterally adjacent the first electrode, and separated from the first electrode by a spacing. A colloidal-processed Si particle layer overlies the first electrode, the second electrode, and the spacing between the electrodes. The Si particle layer includes a first plurality of nano-sized Si particles and a second plurality of micro-sized Si particles.

Abstract: A data retention monitor for a memory cell including a voltage source and a voltage comparator. The voltage source is adapted to provide a selectable voltage to the memory cell. The selectable voltage includes a read voltage and a test voltage, with the test voltage being greater than the read voltage. The voltage comparator is adapted to compare a voltage of the memory cell with a reference voltage after the provision of the selectable voltage to the memory cell. The memory cell retains data when the memory cell voltage generated at least in part by the test voltage is substantially equal to the reference voltage.

Abstract: A structure. The structure includes a substrate, a resistive/reflective region on the substrate, and a light source/light detecting and/or a sens-amp circuit configured to ascertain a reflectance and/or resistance change in the resistive/reflective region. The resistive/reflective region includes a material having a characteristic of the material's reflectance and/or resistance being changed due to a phase change in the material. The resistive/reflective region is configured to respond, to an electric current through the resistive/reflective region and/or a laser beam projected on the resistive/reflective region, by the phase change in the material which causes a reflectance and/resistance change in the resistive/reflective region from a first reflectance and/or resistance value to a second reflectance and/or resistance value different from the first reflectance and/or resistance value.

Abstract: A photosensitive diode has an active region defining a majority carrier of a first conductivity type and a minority carrier of a second conductivity type. An extraction region is disposed on a first side of the active region and extracts minority carriers from the active region. It also has majority carriers within the extraction region flowing toward the active region in a condition of reverse bias. An exclusion region is disposed on a second side of the active region and has minority carriers within the exclusion region flowing toward the active region. It receives majority carriers from the active region. At least one of the extraction and exclusion region provides a barrier for substantially reducing flow of one of the majority carriers or the minority carriers, whichever is flowing toward the active region, while permitting flow of the other minority carriers or majority carriers flowing out of the active region.

Abstract: An optical sensor element has a gate electrode opposed to a semiconductor layer made of an oxide semiconductor via a gate insulating film, source and drain electrodes being connected to the semiconductor layer, wherein the amount of light received by the semiconductor layer is read out as a drain current which changes in a non-volatile manner relative to a gate voltage.

Abstract: A memory device includes a bit cell including an adjustable transmittance component having a first side and a second side. The adjustable transmittance component has an adjustable transmittance state representative of a bit value of the bit cell. The memory device further includes a photon detector optically coupled to a second side of the adjustable transmittance component. A technique related to the memory device includes determining a transmittance state of the adjustable transmittance component and providing a bit value for the bit cell based on the transmittance state. Another technique related to the memory device includes determining a bit value to be stored at the bit cell and configuring the adjustable transmittance component to have a transmittance state corresponding to the bit value.

Abstract: A memory device including a simultaneous read circuit design for multiple memory cells on a single interconnect using a fast fourier transform analysis circuit. The simultaneous read circuit can be used with any memory type storing information as an energy-absorbing state.

Abstract: A semiconductor integrated circuit capable of protection from card hacking, by which erroneous actions are actively induced by irradiation with light and protected secret information is illegitimately acquired, is to be provided. Photodetectors, configured by a standard logic process, hardly distinguishable from other circuits and consumes very little standby power, are mounted on a semiconductor integrated circuit, such as an IC card microcomputer. Each of the photodetectors, for instance, has a configuration in which a first state is held in a static latch by its initializing action and reversal to a second state takes place when semiconductor elements in a state of non-conduction, constituting the static latch of the first state, is irradiated with light. A plurality of photodetectors are arranged in a memory cell array. By incorporating the static latch type photodetector into the memory array, they can be arranged inconspicuously.

Abstract: A semiconductor integrated circuit capable of protection from card hacking, by which erroneous actions are actively induced by irradiation with light and protected secret information is illegitimately acquired, is to be provided. Photodetectors, configured by a standard logic process, hardly distinguishable from other circuits and consumes very little standby power, are mounted on a semiconductor integrated circuit, such as an IC card microcomputer. Each of the photodetectors, for instance, has a configuration in which a first state is held in a static latch by its initializing action and reversal to a second state takes place when semiconductor elements in a state of non-conduction, constituting the static latch of the first state, is irradiated with light. A plurality of photodetectors are arranged in a memory cell array. By incorporating the static latch type photodetector into the memory array, they can be arranged inconspicuously.

Abstract: A semiconductor integrated circuit capable of protection from card hacking, by which erroneous actions are actively induced by irradiation with light and protected secret information is illegitimately acquired, is to be provided. Photodetectors, configured by a standard logic process, hardly distinguishable from other circuits and consumes very little standby power, are mounted on a semiconductor integrated circuit, such as an IC card microcomputer. Each of the photodetectors, for instance, has a configuration in which a first state is held in a static latch by its initializing action and reversal to a second state takes place when semiconductor elements in a state of non-conduction, constituting the static latch of the first state, is irradiated with light. A plurality of photodetectors are arranged in a memory cell array. By incorporating the static latch type photodetector into the memory array, they can be arranged inconspicuously.

Abstract: Methods and devices for monitoring distributed electric power are disclosed, including energy devices with a sensor for monitoring an electric circuit, and a memory to store sensor measurements. Various techniques are disclosed for using polymeric RAM, 1T-DRAM, enhanced SRAM, magnetoresistive RAM, organic RAM, chalcogenide RAM, holographic memory, PLEDM, single-electron RAM, fractal cluster glass memory and other technologies in energy devices with high-endurance, high-density, high-capacity, non-volatile, solid-state, or removable memories.

Abstract: A solid state memory device is fabricated by forming a level of the device; identifying defective areas in the level; and programming address logic of the level to avoid the defective areas in the level.

Abstract: A nonlinear coupling oscillator array is configured in such a manner that, for example, two layers in each of which a number of quantum dots as oscillators are arranged two-dimensionally are laid one on another. Adjacent quantum dots in the upper layer have tunnel coupling that exhibits a nonlinear current-voltage characteristic. The quantum dots in the upper layer receive an input of initial data/bias current, and each quantum dot in the upper layer is coupled with one quantum dot in the lower layer via a gate function having a time constant. Adjacent quantum dots in the lower layer do not interact with each other and the quantum dots in the lower layer are connected to the ground. For example, initial data are input by generating electron-hole pairs by applying light having an intensity profile corresponding to data, and injecting resulting electrons into the quantum dots of the upper layer.

Abstract: An optical memory system includes memory cells which utilize synthetic DNA as a component of the information storage mechanism. In the preferred embodiment, memory cells contain one or more chromophoric memory units attached to a support substrate. Each chromophoric memory unit comprises a donor, an acceptor and, at some time during its existence, an active quencher associated with the donor and/or the acceptor. The donor and the acceptor permit non-radiative energy transfer, preferably by Förster energy transfer. To write to the memory cell, the quencher is rendered inactive, preferably by illumination with ultraviolet light. To read, the chromophoric memory units in a read portal are illuminated, and the read illumination is detected. In the preferred embodiment, multiple chromophoric memory units having resolvable read properties are contained within a single read portal. In this way, a multibit word of data may be read from a single diffraction limited read portal.

Abstract: A protection circuit and method for preventing high word line voltages during plasma processing of integrated circuits. The protection circuit includes a shunt transistor connected between each word line and ground, and a light sensitive element connected to the gate of each shunt transistor. During plasma processing, the plasma glow activates the light sensitive element, which generates a corresponding voltage that is applied to a gate of the shunt transistors. Consequently, the built-up potentials in the word lines are shunted to ground throughout the plasma process.

Abstract: In a multistable optical logic element with a light-sensitive organic material (1) which undergoes a photocycle with several physical states by irradiation with light, and wherein a physical state is assigned a logical value which can be changed by addressing the element optically, the element initially before the addressing is in a metastable state generated in advance. A multistable optical logic element has been made proximity-addressable by providing at least a color light source (2) for optical addressing and at least one color-sensitive optical detector (5) adjacent to the light-sensitive material. In a method for preparing of the light-sensitive material (1) a desired initial metastable state is generated in the photocycle and assigned a determined logical value for the element.

Abstract: A manganese oxide material that can be used as a switching device or as a memory device or the like is formed of Mn-based oxide material. The Mn-based oxide material exhibits insulator-to-metal transitions induced by irradiating the material with laser light.

Abstract: An optical memory system includes memory cells which utilize synthetic DNA as a component of the information storage mechanism. In the preferred embodiment, memory cells contain one or more chromophoric memory units attached to a support substrate. Each chromophoric memory unit comprises a donor, an acceptor and, at some time during its existence, an active quencher associated with the donor and/or the acceptor. The donor and the acceptor permit non-radiative energy transfer, preferably by Forster energy transfer. To write to the memory cell, the quencher is rendered inactive, preferably by illumination with ultraviolet light. To read, the chromophoric memory units in a read portal are illuminated, and the read illumination is detected. In the preferred embodiment, multiple chromophoric memory units having resolvable read properties are contained within a single read portal. In this way, a multibit word of data may be read from a single diffraction limited read portal.

Abstract: A generator of energy-depleted radiation and various methods and applications using the energy-depleted radiation. Various embodiments are disclosed of the energy-depleted radiation generator and an energy-restored radiation generator, which permits detection of wave properties of the radiation without regard to the depletion of its energy. The energy-depleted radiation generator functions in one embodiment by selective transmission of destructively interfering radiation. Other embodiments use two-beam coupling or directional coupling to achieve energy depletion. Restoring energy to an energy-depleted radiation beam is accomplished by transferring energy to it from a reference beam, in a beam-to-beam transfer or in an optical amplifier. The invention has important applications in fields such as communications, specimen analysis, photorefractive recording, holography, and other fields in which the reduction of energy content in the associated radiation is advantageous.

Abstract: A photosensitive member which has an electrode provided on the front side and a photoconductive layer stacked on the electrode, the photosensitive member being disposed face-to-face with an electrostatic information recording medium that includes a charge retaining layer having an electrode provided on the rear side, either in or out of contact with each other, to carry out exposure with a voltage being applied between the two electrodes, thereby forming an electrostatic charge pattern on the electrostatic information recording medium in accordance with an exposure light pattern. The layer arrangements of the photosensitive member and the photoconductive layer as well as the method of forming the photoconductive layer are improved so that electrostatic information can be recorded on the electrostatic information recording medium with high sensitivity and it is also possible to improve the contrast ratio of the information charge at the exposed region to that at the unexposed region.

Abstract: An information recording medium including a substrate, an intermediate conductive layer, and a high molecular weight layer. When the high molecular weight layer is heated to close to its glass (transition) temperature by applying an AC field in order to induce thermal motion in molecular electric coupling poles present in the high molecular weight layer, the coupling poles are polarized by an external electric field applied between a microscopic probe tip and the intermediate conductive layer, the polarization becoming fixed when the temperature of the layer drops.

Abstract: Information recording medium, reading apparatus for said medium and processes for implementing the apparatus. According to the invention, the material constituting the recording layer (15) is photoconducting. The apparatus comprises in particular a microprobe (20) and a light source (26) capable of subjecting the recording layer to a lit or unlit state. The resulting variations in resistivity are used to determine whether the read zone is amorphous or crystalline.

Abstract: A method of preparing an analog of bacteriorhodopsin in which organic cations selectively replace calcium and magnesium cations. The method comprises preparing a cation-free blue membrane and incubating the blue membrane with an organic cation selected from the group consisting of monovalent quaternary ammonium cations, bolaform cations and pyridinal cations.

Abstract: A digital memory element having three miniaturized electron tubes, which is faster and smaller by at least one further order of magnitude than known digital memory elements, can be produced through conventional and additive lithography. The digital memory element is a small memory capacitor linked to the anode of a write-in tube, to the cathode of an erase tube, and to a deflection element of a read-out tube which deflects an electron beam, in dependence upon the charge state, to one of two detectors.

Abstract: A voltage of an intensity corresponding to information to be recorded is applied to a recording medium which comprises a film containing a charge generating material. The film is sandwiched between two electrodes. Electric charges are accumulated in the recording medium upon application of the voltage so that information is recorded. When light is irradiated to the recording medium, the stored charges are converted into photo-current. The recorded information is read out by detecting the photo-current. When the electrodes are short-circuited, the recorded information is erased.

Abstract: A system for, and method of, emulating, on a non-native computer, a native environment for a visual display object file for a real time process control system and a real time process control system employing the emulator. The visual display object file contains a drawing command, an address pointer for communicating data with the real time process control system and a rule for interpreting data received from a touch-sensitive screen.

Abstract: An optical memory system includes memory cells which utilize synthetic DNA as a component of the information storage mechanism. In the preferred embodiment, memory cells contain one or more chromophoric memory units attached to a support substrate. Each chromophoric memory unit comprises a donor, an acceptor and, at some time during its existence, an active quencher associated with the donor and/or the acceptor. The donor and the acceptor permit non-radiative energy transfer, preferably by Forster energy transfer. To write to the memory cell, the quencher is rendered inactive, preferably by illumination with ultraviolet light. To read, the chromophoric memory units in a read portal are illuminated, and the read illumination is detected. In the preferred embodiment, multiple chromophoric memory units having resolvable read properties are contained within a single read portal. In this way, a multibit word of data may be read from a single diffraction limited read portal.

Abstract: Storage, retrieval and erasure of optical information in bacteriorhodopsin (bR) films by alteration of the bR's absorption spectrum by photo-induction and by application and switching of an electrical field.

Abstract: The optical memory device of the present invention comprises a photodetector device which generates a current when light is incident thereon and a light-emitting device which is connected to the photodetector device in series so as to emit light upon receiving a supply of current from the photodetector device and feed back thus emitted light toward the photodetector device.

Abstract: In a photoelectric sensor that enables information to be recorded on an information recording medium at an intensity amplified to a level higher than that of a current induced by information exposure and allows conductivity to remain maintained by a continued application of voltage even after termination of the information exposure, so that information can subsequently be recorded on the information recording medium, a photoconductive layer contains a substance that emits fluorescence in a wavelength region in which a charge generation substance-containing layer absorbs light, so that color images can be well recorded on the information recording medium. Also provided is an information recording system using such a photoelectric sensor.

Abstract: An information recording system including a photoelectric sensor having a semiconductive, photoconductive layer stacked on an electrode, and an information recording medium having an information recording layer stacked on an electrode so that information can be recorded on the information recording layer by an electric field or electric charge. The photoelectric sensor and the information recording medium are disposed to face each other, and information exposure is carried out with a voltage being applied between the two electrodes, thereby enabling information to be recorded on the information recording medium. The photoconductive layer of the photoelectric sensor is capable of amplifying an electric field or electric charge given to the information recording medium, so that the intensity of electric field or the amount of electric charge given to the information recording medium can be increased to a level higher than the light energy actually applied.

Abstract: An ultra-high density optical storage system includes an array of nanometer-scale emitter tips which are associated with corresponding storage surfaces. The tips are optically selectively activated to produce data features simultaneously on their corresponding storage surfaces, with the resulting data features having diameters approximately the same as the diameters of the emitter tips. The array is scannable to selected locations, whereby a data set can be stored in parallel at each location. Because of the small size of the data features, the locations of adjacent features can be spaced apart by a distance on the order of 10 nm for ultradense storage.Stored data can be selectively read out optically by positioning the emitter tip array at the location of the data set to be read and directing light onto the storage surfaces for each tip. Light reflected from the surfaces will correspond to the presence or absence of a data feature at each tip for parallel readout.

Abstract: An electronic apparatus comprising a material having a photoconductivity, an energy bandgap, and trap levels. The material is typified by a thin film of polycrystalline diamond. The material is illuminated with a first light having photon energies greater than the energy bandgap of the material. Then, the material is illuminated with a second light having photon energies smaller than the energy bandgap of the material to thereby induce a photocurrent. The amount of the first light can be known by measuring the induced photocurrent.

Abstract: A high density volmetric optical memory stores information in three dimensions by selectively activating a photochemical branching reaction from a short-lived thermal intermediate of the primary photocycle of a light-transducing protein storage medium. A paging laser actuates a selected planar sheet or page of the medium at one wavelength, and data lasers send selected data beams at another wavelength orthogonal to the selected page. In a preferred mode, the medium is bacteriorhodopsin, and the paging beam raises the photocycle from the ground or resting state bR to an intermediate O, and the data beams interact with the O intermediate to create branch species P and Q. The data beams do not interract strongly with bR or with the P or Q. A differential read operation can employ the same paging and data wavelengths. Preferably a partial conversion only is required, with [95% bR, 5% P+Q] representing "0" and [90% bR, 10% P+Q] representing "1".

Abstract: The invention provides a system in which a photoelectric sensor having a transparent electrode and a photoconductive layer formed on a transparent substrate in this order is opposed to a liquid crystal recording medium having a transparent electrode and a polymer dispersion type of liquid crystal layer formed on a transparent substrate in this order, and voltage is applied between both the electrodes for exposure to image-carrying light, so that the liquid crystals are oriented to record the information.