Abstract: A charged particle beam writing apparatus includes a buffer memory including a memory region capable of contemporarily storing writing data for data processing regions, wherein writing data including data files is temporarily stored for each of the data processing regions, a dividing unit to divide the memory region of the buffer memory into a first region being large and a second region being small, a specifying unit to specify the memory region such that a data file being large is preferentially stored in the first region and a data file being small is stored at least in the second region, concerning the data files for each of the data processing regions included in the writing data, and a data processing unit to read data files corresponding to each of the data processing regions from the buffer memory, and to perform data processing using the read data files.

Abstract: A recording system for magnetic storage devices, including a beam column for generating a beam, a platform for moving a magnetic storage medium relative to the beam, and a signal generator for sequentially, or in a continuously alternating manner, deflecting the beam. In turn, the beam is directed according to displacement of dots on the extent of the magnetic storage medium such that dots of a plurality of dot groupings can be written to on the extent during a single pass of the beam column above the extent.

Abstract: A waveguide includes a cladding region that has a refractive index that is substantially uniform and surrounds a wave-guiding region that has an average index that is close to the index of the cladding. The wave-guiding region also contains a thin ring or series of rings that have an index or indices that differ significantly from the index of the cladding. The ring or rings enable the structure to guide light.

Abstract: The scale of the devices in a diode array storage device, and their cost, are reduced by changing the semiconductor based diodes in the storage array to cold cathode, field emitter based devices. The field emitters and a field emitter array may be fabricated utilizing a topography-based lithographic technique.

Abstract: A ballistic memory cell structure employing ballistic transistor technology for switching between a read state and a store state is disclosed. The memory cell structure includes substrate structures forming a side wall and a main chamber for defining a linear ballistic channel between the two. The main chamber is formed to include a deflection channel with deflective surfaces to deflect an electron emitted from an electron source into the memory cell structure. Deflection controllers are coupled to the substrate structures for generating biasing fields that adjust the trajectory of electrons flowing through the linear ballistic channel and the deflection channel. Logic output terminals are positioned beyond channel exits for registering exiting electrons and determining a read or store state.

Abstract: To greatly increase the storage density of a storage apparatus, an electron beam E emitted from a cold cathode 101 is accelerated by an accelerating electrode 102, caused to converge by a convergence electrode 103, deflected by a deflection electrode 104 and applied to a minute region of a storage film 105. The storage film 105 includes, for example, a phase change film 105a. The film is rapidly heated and cooled to change into an amorphous state upon irradiation with an electron beam E with high energy, while being gradually cooled to change into a crystallized state upon irradiation with an electron beam E with approximately intermediate energy, thereby storing data. Upon irradiation with an electron beam E with low energy, the potential difference between a detection electrode 105b and an anode 105c is detected depending on the state, i.e., the amorphous or crystallized state, thereby reading stored data.

Abstract: Alloy memory structures and methods are disclosed wherein a layer or volume of alloy material changes conductivity subsequent to introduction of a electron beam current-induced change in phase of the alloy, the conductivity change being detected using current detection means such as photon-emitting P-N junctions, and being associated with a change in data bit memory state.

Abstract: Methods for storing data are provided. Preferably, the method includes the steps of: providing a data storage device, and preventing an emitter associated with a first data cluster of the data storage device from writing data to another one of the data clusters. Data storage devices also are provided.

Abstract: A system for writing data to and reading data from a magnetic semiconductor memory utilizing a spin polarized electron beam. The magnetic semiconductor memory comprises a plurality of storage locations, each storage location includes a magnetic material and a layer of semiconductor material capable of emitting photons. The method of reading data from the magnetic semiconductor memory comprising steps of directing a spin-polarized electron beam at the magnetic semiconductor memory, and detecting the light emission state of the semiconductor layer from the magnetic semiconductor memory.

Abstract: Modules and processor-based systems are provided. One such module comprises: a first wafer having a storage medium, the storage medium having a plurality of storage areas, each of the storage areas being configurable in one of a plurality of structural states to represent information stored in the storage area; a second wafer arranged proximate the first wafer, the second wafer having a plurality of electron beam emitters configured to electrically communicate with the storage medium, said storage medium and said plurality of emitters being configured to move relative to each other such that each emitter may provide a beam of electrons to at least one of the storage areas of the storage medium, and logic circuitry configured to enable extraction of data from the storage areas of the storage medium and execution of instructions embodied within the data.

Abstract: Methods for storing data are provided. Preferably, the method includes the steps of: providing a data storage device, and preventing an emitter associated with a first data cluster of the data storage device from writing data to another one of the data clusters. Data storage devices also are provided.

Abstract: A preferred microprocessor module includes a first wafer incorporating a storage medium. The storage medium is provided with storage areas that are configurable in one of a plurality of structural states to represent information stored in the storage areas. A second wafer is arranged proximate the first wafer and includes electron beam emitters that are configured to electrically communicate with the storage medium. The storage medium and the emitters are configured to move relative to each other so that each emitter may provide a beam of electrons to at least one of the storage areas. Additionally, a third wafer is provided which includes logic circuitry configured to enable extraction of data from the storage areas of the storage medium and execution of instructions embodied within the data. Processor-based systems also are provided.

Abstract: A preferred data storage system includes a memory storage device that incorporates a storage medium and electron beam emitters which are configured to electrically communicate with the storage medium. The storage medium and the emitters are configured to move relative to each other so that each emitter may provide a beam of electrons within a respective coverage area of the storage medium. Each coverage area includes at least one storage area which is configurable in at least two structural states, which represent information stored in the storage areas. A data recovery system also is provided which is communicatively coupled with the memory storage device. The data recovery system is configured to determine whether a first emitter of the memory storage device has failed and to recover information stored in at least one of the storage areas of the first emitter with a second emitter of the memory storage device. Computer readable media and methods also are provided.

Abstract: A digital memory element having three miniaturized electron tubes, which is faster and smaller by at least one further order of magnitude than known digital memory elements, can be produced through conventional and additive lithography. The digital memory element is a small memory capacitor linked to the anode of a write-in tube, to the cathode of an erase tube, and to a deflection element of a read-out tube which deflects an electron beam, in dependence upon the charge state, to one of two detectors.

Abstract: A device for optically storing and retrieving information incorporating a cadmium fluoride crystal. Using focused ionizing radiation, patterns can be formed in the crystal by the creation of color centers and/or intrinsic luminescence quenched areas. The stored information can then be retrieved by irradiating the crystal with visible light, ultraviolet light, ionizing radiation or combinations thereof. The device and the storage technique allows the storage of various different levels of information, the different levels being retrievable by using different irradiating media and magnifications of the retrieved information. The device and technique also allows the information to be stored for a predetermined period of time.

Abstract: A storage device including many field emitters in close proximity to a storage medium, and a micromover, all in a partial vacuum. Each field emitter can generate an electron beam current. The storage medium has many storage areas on it, with each field emitter responsible for a number of storage areas. Also, each storage area can be in a number of different states to represent the information stored in that area. In storing information to the storage device, the power density of an electron beam current is increased to change the state of the storage area bombarded by the electron beam current. In reading information from the device, the power density of the electron beam current is reduced to generate a signal current from the storage area bombarded by the electron beam current. During reading, the power density is selected to be low enough so that no writing occurs. The magnitude of the signal current depends on the states of the storage area.

Abstract: A molecular memory medium for storing digital bits at a density of several hundred million per square centimeter. The medium is read and written by a tunnelling probe, and comprises a plane surface and a means for moving the surface relative to the tunnelling probe. Arrayed on the surface are plural memory elements, each storing one bit, and having, relative to the surface, a first positional state and a second positional state, representing the first state and the second state, respectively, of the bit. The positional states are distinguished from one another by a difference in a tunnelling current in the tunnelling probe. The memory element is switched from one positional state to the other by an electrostatic force applied by the tunnelling probe.

Abstract: A process for the storage of information units in a nanometer range involves producing cup-like pits in a noble-metal surface.

Abstract: A data storage system is described which includes a magnetostrictive, anisotropic, ferromagnetic film whose domains exhibit a preferred orientation and are initially poled in one direction along the preferred orientation. A field is applied in opposition to the one direction, the field being insufficient to cause a switching of the poled domains. An electrostrictive film is placed in contact with the ferromagnetic film and a writing system is provided to actuate the electrostrictive film to impart stresses to the ferromagnetic film at selected locations. The induced stresses reduce the anisotropy energy of the ferromagnetic film at the selected locations and enable the domains thereat to become poled in accordance with the applied field. In one version of the invention, the writing means comprises a directed energy beam such as a laser or electron beam. In another version, the writing system employs surface acoustic waves in combination with a scanned energy beam.

Abstract: An opto-magnetic signal reproducing apparatus includes a light source unit for applying a linearly polarized light beam to a recording medium having magnetically recorded information, a splitter for splitting the light beam modulated, responding to the recorded information by a magneto-optic effect, into two light beams having different polarization directions from each other, and a reproducing device for differentially detecting the split light beams to reproduce the recorded information. The splitter imparts a phase different equal to an integer multiple of .pi. to each of the split light beams.

Abstract: An apparatus for and a method of addressing data storage locations (80) employs an electron beam (76) to address such storage locations and thereby store data in and read data out of them. The storage locations are defined by the overlapping areas of multiple column electrodes (62) extending in a common direction on a first substrate (82) and rows (120) addressed by an electron beam (76) and extending in a common direction on a second substrate (54). A layer of dielectric material (52) separates the first and the second substrates, which are positioned face-to-face and spaced-apart with the direction of the addressed rows transverse to that of the column electrodes. The column electrodes receive data drive signals. The addressing apparatus is configured so that for each storage location secondary electrons emitted by the electron beam striking the location function as an electrical switch that changes between a conducting state and a nonconducting state in response to the presence of the electron beam.

Abstract: An electron beam memory system in which a phase transition type recording film is used as an information recording medium, and for recording information, a focused electron beam is selectively projected on desired positions of the recording film so as to locally heat the recording film and cause phase transition, while for retrieving information, an electron beam having energy at a degree not causing the phase transition is projected so as to utilize the fact that reflection or diffraction of the primary electron beam projected at the retrieval differs between the recorded regions and unrecorded regions.

Abstract: A memory element for an electron beam target comprising an electrically insulating support laminated to a conductive layer which, in turn, is laminated to a dielectric surface layer having a thickness less than 1 micrometer, e.g. 0.04-0.8 micrometer, a resistivity of at least 10.sup.16 ohm-cm and a dielectric strength of at least 10.sup.5 volts/cm; said dielectric surface layer comprising a material sensitive to electron beam irradiation and provided, essentially coplanar with its exposed surface, with focusing means or indicia in the form of shaped patterns that provide reference points for locating recording or retrieval points during electron beam exposure and scanning of the target surface.Writing is accomplished by irradiating with an electron beam either to develop a charge pattern or to alter the state of polymerization of cross-linking or both in a prescribed pattern for transmitting data.

Abstract: A rapid random accessed electron beam memory system comprises a disc mounted for rotation and supporting an information storage medium. An electron gun is mounted for movement across the disc. The gun has ultra-compactness and extremely low mass, yet is capable of developing a finely focused electron beam probe at high beam current densities. The gun comprises a low-mass field emission cathode, the cathode having an emitting tip and being adapted to receive a predetermined electrical potential to form a high brightness electron source at the tip. An electrostatic focus lens forms a real image of the electron source in the vicinity of the storage medium. The lens comprises a first electrode adapted to receive a predetermined second electrical potential which is positive relative to the potential on the tip and has a value effective to extract electrons from the tip. The electrode defines a relatively small aperture for deforming the diameter of an electron beam which is formed.

Abstract: In a video computer system and the like having a bit-mapped RAM component including a shift register, an improved method is provided for rapidly clearing the RAM in order to prepare the system to receive new input data. More particularly, a preselected number of predetermined data bits corresponding to the number of columns in the RAM is serially shifted into the register. Thereafter, the contents of the shift register are progressively shifted into each of the rows in the RAM until all rows are filled.

Abstract: Charged beam accessible data storage methods and devices involve a storage medium having an array of protrusions formed on a thermally insulative, substantially charged beam transparent base. The protrusions, made of high contrast material, can be selectively melted by a charged beam, such as an electron beam, in order to decrease the protrusions' aspect ratio and to increase their energy absorptive action when scanned by a charged beam. Since the melted protrusions do not wet on the base, the protrusions quickly assume a spherical bead shape when melted due to favorable surface tension forces. The bi-level charged beam absorption characteristics of the melted and unmelted protrusions provide the two "on" or "off" stored data states.

Abstract: A beam-addressed memory system for digital memory recording and reading which comprises an electron beam generating and focusing subsystem, an electron detecting subsystem, electronic control and interface circuit means, and a storage medium consisting essentially of a cross-linkable polymeric film having an implanted surface layer of heavy metal ions.

Abstract: A method for storing data in an archival memory semiconductor target by providing a masking layer of a conductive material on the surface of an insulative layer upon the top surface of a semiconductor substrate; the material layer is assigned a two-dimensional array of possible data storage sites. The masking layer at those storage sites at which a first binary value is to be stored, is melted; the selected material is one which, at the melting temperature thereof, does not wet the surface of the chosen insulator whereby apertures are formed by the writing electron beam in the masking layer, at energy levels insufficient to evaporate the masking material. The writing beam energy is reduced at the data sites at which data bits of the remaining binary value are to be stored, and does not melt the masking material thereat.

Abstract: Electron beam-sensitive films containing silver chloride, cadmium chloride and tin oxide, and the use of such films to provide optical masks by selective film darkening with an electron beam, are described.

Abstract: A mass data storage arrangement such as for books, is provided, by recording the data in the form of one micron pits in radial rows within spiral grooves of a disc. A reading element comprises a CRT providing a light beam output, which is focused down to one micron in size. The spot output of the CRT is scanned across each row having the presence or absence of pits. The light reflected from the disc is modulated by the presence or absence of pits and is reflected to a photomultiplier. The output of the photomultiplier is decoded and then displayed in human language form.

Abstract: Dislosed is a system for retrievably storing information in a storage medium comprising a laterally extending regular lattice of substantially identical units. Each unit is approximately the size of a large biological molecule or a virus (i.e. several hundred Angstroms or less), and can in fact be a single biological molecule, a single virus, or an equivalent particle or aggregate. Any individual unit can be selectively modified by a narrowly focused electron beam without affecting adjacent units, to thereby store (write in) information as a pattern of modified lattice units. After a lattice has been so modified, it can be stabilized by depositing thereon a thin metallic layer, and the stored information can be read out by a detecting electron beam.

Abstract: One of a multiplicity of data values is permanently recorded at each data site in a two-dimensional data site array defined upon the surface of a semiconductor diode target by implanting an auxiliary bit thereat having an associated one of a multiplicity of possible dopant concentrations, at a uniform implantation depth, or of different implantation depths, at a uniform doping concentration, into a fabricated layer of the diode, responsive to respectively controlling the fluence or the landing energy of a writing ion beam.

Abstract: A method for storing data in an archival memory semiconductor target by inducing damage to the semiconductor lattice at selected ones of a plurality of storage sites arranged as a two-dimensional array upon a surface of the target. Ions are accelerated and collimated as a beam to impinge upon a target surface to induce the damage to a controlled depth, whereby subsequent illumination of a damaged data site by an electron beam will allow the beam-produced electron-hole pairs to recombine within the damaged area to prevent increased current flow and read a binary zero bit, while hole migrations through a target depletion region will cause increased current flow, at an undamaged data site, to indicate a binary one data bit.

Abstract: A memory device and method is disclosed wherein positions of ions associated with a film are varied locally with respect to the film's surface by an electric field. A writing and erasing field is created by voltage modulating the film's conducting substrate in synchronization with low intensity electron bombardment of a local area of the film's surface by a scanning electron beam.The ion's position in the film varies the film's surface potential and alters the angular distribution imparted by its surface to primary diffracted and secondary emitted electrons. In the invention's read mode a scanning electron beam, combined with a detector discriminator, analyzes these emitted electrons to determine the surface potential at each address on the film thus reading out data stored in the film. A second means of reading out stored information utilizing detection of low energy electrons selectively diffracted by ions near the film's surface is disclosed.