Abstract: A page buffer of a non-volatile memory device and a method for programming and reading the same is provided. The page buffer includes a first latch unit and one or more second latch units for storing data, transfer units connected between the first latch unit and the second latch units for transferring the data stored in the first latch unit to the second latch units, a path select unit that that senses data from bit lines and stores the sensed data in the first latch unit, and, in a program operation, transfers the data from the first and second latch units to the bit lines, a sensing unit for allowing the path select unit to sense data or the data received from the bit lines to be stored in the first latch unit, and a data I/O unit.

Abstract: Circuits have a certain function. A plurality of first registers are connected in series, and shift stored data to respective adjacent registers in sequence. A plurality of second registers are connected in series, and shift stored data to respective adjacent registers in sequence. The plurality of first and second registers are connected in one-to-one correspondence to a plurality of input terminals or to a plurality of output terminals. A first scan input terminal is formed at one end of the plurality of first series-connected registers, and a first scan output terminal is formed at the other end. A second scan input terminal is formed at one end of the plurality of second series-connected registers, and a second scan output terminal is formed at the other end. An operation control circuit controls operations of the circuits and the plurality of first and second registers.

Abstract: A memory cell of a programmable device includes a memory partitioning circuit to partition a multiple port memory device into one or more single port memory partitions. The memory partitioning circuit prevents cross addressing by setting the value of one or more address lines of each memory port to a fixed value. The memory partitioning circuit holds address lines at their required values during the programmable device's normal, clear, and reset modes of operation. The behavior of the memory partitioning circuit is set by a portion of a device configuration used to configure the programmable device. The memory partitioning circuit is connected between a memory cell's address register and row or column decoders used to access the multiple port memory device. The memory partitioning circuit can also perform bit-wise inversion operations on portions of the memory addresses.

Abstract: Disclosed is a nonvolatile ferroelectric FeRAM control device which allows a programmable register to be stably driven in a low voltage region by controlling a pumping voltage supplied to the register. A pumping voltage controller is configured to output a pumping voltage control signal by receiving a power voltage control signal having a different output level according to a power voltage region where a power voltage belongs when the power control signal is applied. A cell plate voltage controller is configured to selectively output a cell plate pumping voltage control signal depending on states of the power voltage control signals when a cell plate control signal is applied. A write enable voltage controller is configured to selectively output a write enable pumping voltage control signal depending on states of the power voltage control signal, when a write enable control signal is applied.

Abstract: A semiconductor memory system for the transfer of write and read data signals among interface circuits includes at least one memory device, a memory controller unit and, optionally, a register unit of a semiconductor memory system, wherein the data signals are each transferred in signal bursts of a specific burst length. The system is characterized in that a number of additional bits extending the burst length are transferred together with at least every nth signal burst.

Abstract: A memory array configured to operate as a shift register includes a first column of memory cells with an input and an output and at least a second column of memory cells with an input and an output. The memory array also includes a multiplexer that is connected between the output of the first column of memory cells and the input of the second column of memory cells. The memory array can be operated as a shift register by shifting data from the first column of memory cells to the second column of memory cells through the multiplexer rather than using general routing lines.

Abstract: The present invention discloses a pointer generator which generates pointer values for a stack (LIFO memory). The pointer generator includes a selection input terminal and a bi-direction linear feedback shift register. The selection input terminal transmits a selection signal to the bi-direction linear feedback shift register in response to a command to read/write the stack. The fundamental structure of the bi-direction linear feedback shift register is a linear feedback shift register. After receiving the selection signal from the selection input terminal, the bi-direction linear feedback shift register performs calculation of a specific primitive characteristic polynomial, and then creates a number sequence. When the selection signal changes, the bi-direction linear feedback shift register creates another number sequence by performing calculation of another specific primitive characteristic polynomial. The two number sequences are exactly opposite to each other in order.

Abstract: A circuit which accurately controls the word line (pass transistor gate) driving voltage to a voltage which is both controlled and is not significantly greater than is needed to drive the word line. The circuit eliminates the need for a double-boot-strapping circuit, and ensures that no voltages exceed that necessary to fully turn on a memory cell access transistor. Voltages in excess of that which would reduce reliability are avoided, and accurate driving voltages are obtained. A DRAM includes word lines, memory cells having enable inputs connected to the word lines, a gate receiving word line selecting signals at first logic levels Vss and Vdd, and for providing a select signal at levels Vss and Vdd, a high voltage supply source Vpp which is higher in voltage than Vdd, a circuit for translating the select signals at levels Vss and Vdd to levels Vss and Vpp and for applying it directly to the word lines whereby an above Vdd voltage level word line is achieved without the use of double boot-strap circuits.

Abstract: A semiconductor memory device is capable of testifying over-driving quantity depending on position. A semiconductor memory device includes a plurality of in-bank over-drivers for temporarily applying a high voltage to a normal power that is supplied to a memory array cell within a bank; a plurality of out-bank over-drivers arranged outside the bank for temporarily applying the high voltage to the normal power that is supplied to the bank; a plurality of PERI over-drivers arranged at the peripheral area for temporarily applying the high voltage to the normal power; a mode register set for receiving a signal to select one of the over-drivers; and a decoder activated in response to a test mode signal for decoding the set value of the MRS to selectively drive the over-driver arranged at a desired position and having desired driving power among the in-bank and out-bank over-drivers and the PERI over-drivers.

Abstract: A memory device is operable in either a high mode or a low speed mode. In either mode 32 bits of data from each of two memory arrays are prefetched into respective sets of 32 flip-flops. In the high-speed mode, the prefetched data bits are transferred in parallel to 4 parallel-to-serial converters, which transform the parallel data bits to a burst of 8 serial data bits and apply the burst to a respective one of 4 data bus terminals. In the low speed mode, two sets of prefetched data bits are transferred in parallel to 8 parallel-to-serial converters, which transform the parallel data bits to a burst of 8 serial data bits and apply the burst to a respective one of 8 data bus terminals.

Abstract: A register apparatus and method for providing a two-way gating structure for receiving a write enable signal, a chip select signal, at least one read signal, and an address signal for a register. The apparatus and method comprise a two-way gating portion for generating a coded write address by AND-operating a first signal with the address signal, a coded read address by AND-operating a second signal with the address signal, and a reader activation signal by AND-operating the read signal with the second signal. The first and second signals are generated by AND-operating the chip select signal with the write enable signal and by AND-operating the chip select signal with an inverted write enable signal. A writer decodes the coded write address and generates write signals using the decoded write address and data received from a bus. A reader decodes the coded read address and generates data using data read from the register and the decoded read address.

Abstract: The refresh address generator of a memory includes, in part, a counter, a multitude of shift registers and multiplexers, and a comparator. With each clock cycle, the counter increments and stores the refresh count address, and the addresses stored in the counter and the shift registers prior to the increment operation is shifted out and stored in a pipelined fashion. If the array address stored in the last stage of the register pipeline is equal to the address of the array read out during the cycle immediately preceding the refresh cycle or is equal to the address of the neighboring array of the read out array, the comparator causes multiplexer to select the address stored in the counter as the refresh address. This address differs from the address of the array read out during the immediately preceding cycle by at least two counts.

Abstract: A method and apparatus for resetting and modifying special registers in a security token is described. In one embodiment, a register may be reset when a reset flag is true when a special transmission on a bus demonstrates the mutual locality of the associated processor and chipset. A modify flag may also be used to indicate whether the register contents may be modified. Modifications may also be dependent upon demonstration of mutual locality.

Abstract: The invention relates to a memory arrangement for processing data and to a method for operating this memory arrangement. The inventive method involves a control signal being transferred together with the data on, with a change in the control signal activating the DLL circuit and synchronizing it to a clock. In this case, the DLL circuit stipulates a sampling time for the data. In line with the invention, after a predetermined length of time within which no data have been read from the memory, the memory is accessed artificially in order to generate a change in the control signal for the DLL circuit.

Abstract: A register file contains a local bit trace and a driving signal trace as well as a plurality of data cells coupled to the local bit trace. A device is coupled to the driving signal trace and the local bit trace to intelligently charge and float the local bit trace. The intelligent charging and floating is facilitated by determination of a selection of one of the data cells.

Abstract: A register file includes a dynamic local bit trace, a plurality of data cells coupled to the dynamic local bit trace, and a device coupled to the dynamic local bit trace to facilitate precharging the dynamic local bit trace to a precharge value and to intelligently hold the precharged value on the dynamic local bit trace during evaluation of the dynamic local bit trace.

Abstract: A data output circuit includes a plurality of registers and a plurality of register output selection switches that are respectively connected to the plurality of registers. Pairs of the plurality of register output selection switches are connected by respective common active regions. A first data group selection switch is connected to the common active regions of a first set of the plurality of register output selection switches. A second data group selection switch is connected to the common active regions of a second subset of the plurality of register output selection switches. An output driver is connected to the first and second data group selection switches.

Abstract: A shift redundancy circuit for enabling switching operation of memory blocks to be executed at a high speed and for reducing current consumption relating to the switching operation. A shift control circuit includes a first shift control circuit for generating a first shift signal corresponding to a first deficiency address of a memory block and a second shift control circuit for generating a second shift signal corresponding to a second deficiency address of a memory block. When the memory blocks are switched, a shift signal controlling the switching of selection line switches are selected from the first shift signal whose state is determined in advance, the second shift signal whose state is determined in advance, and a low potential power supply.

Abstract: An electronic device (10). The device comprises a memory structure (12) structure comprising an integer M of word storage locations. The device further comprises a shift register (SRRD; SRWT) for storing a sequence of bits. The sequence in the shift register comprises a number of bits equal to a ratio of 1/R1 times the integer M. The device further comprises circuitry (16) for providing a clock cycle to the shift register for selected data operations with respect to any of the word storage locations. The selected data operations are a data read or a data write. In response to each clock cycle, received from the circuitry for providing the clock cycle, the shift register shifts the sequence. Further, one bit in the sequence corresponds to an indication of one of the memory word storage locations from which a word will be read or into which a word will be written.

Abstract: A semiconductor memory device includes a plurality of word decoders arranged in a plurality of columns, a plurality of word line selecting shift registers corresponding to the respective word decoders to indicate a word line subjected to refresh operation, and a shift control signal generating circuit operable to supply a shift control signal indicative of timing of shift operations to the plurality of word line selecting shift registers, wherein the said shift control signal generating circuit is configured to supply the shift control signal only to a column currently subjected to refresh operation among the plurality of columns.

Abstract: A semiconductor memory device is disclosed, which includes a memory cell array including memory cells arranged in rows and columns, a word line, a bit line, a row decoder and a column decoder, a sense amplifier provided for each of the columns of the memory cell array, a write latch circuit configured to store externally input data and sets data of one row of the memory cell array in the sense amplifiers in test mode, a read latch circuit configured to store data of one row, which is read from the memory cell array and set in the sense amplifiers in test mode, a first comparison circuit configured to compare the data stored in the write latch circuit and the data stored in the read latch circuit, and a first comparison result register configured to store a comparison result of the first comparison circuit.

Abstract: Flash memory devices include at least one flash memory array and an address compare circuit that is configured to indicate whether an applied row address associated with a first operation (e.g., program, erase) is within or without an unlock area of the at least one flash memory array. A control circuit is also provided. This control circuit is configured to block performance of the first operation on the flash memory array in response to detecting an indication from the address compare circuit that the applied row address is outside the unlock area of the flash memory array.

Abstract: A CAM array block is configured to perform a search operation in a staged segment-to-segment manner using a plurality of hybrid comparands that are pipelined into the CAM array block during consecutive stages of the search operation. These hybrid comparands include at least a virtual sector field and a data field. The CAM array block is also responsive to a segment address, which identifies an active segment of CAM cells in said CAM array block. The CAM array block may include a CAM array and a global mask cell sub-array that is electrically coupled to the CAM array. This global mask cell sub-array may be responsive to the segment address and a mode select signal. A bit/data line control circuit is also provided. The bit/data line control circuit is electrically coupled to the CAM array by bit lines and data lines and has inputs that are responsive to signals generated by the global mask cell sub-array. The device may also include an address translation unit that is responsive to an input address.

Abstract: An integrated synchronous memory has a register which can store a frequency-range information item regarding whether the memory is operated in a first or in a lower, second frequency range in an application. The mode of operation of a subcircuit in the memory can be controlled on the basis of the stored frequency-range information item in the register. A memory configuration having a memory module on which at least one such synchronous memory is disposed contains a controller which can be connected to the memory module and sets the register in the at least one memory. Therefore, optimum functionality of the memory can be ensured both in a high and in a low frequency range of the operating frequency.

Abstract: The present invention discloses a page buffer having a dual register, a semiconductor memory device having the same, and a program method thereof. A data transmission path is formed by installing switching units so that a main register as well as a cache register can be directly provided with a data. Therefore, a program operation is performed directly by using the main register in a normal program operation, and by using the cache register in a cache program operation. Accordingly, a process for transmitting the data from the cache register to the main register is omitted in the normal program operation, to reduce a transmission time (about 3 ?s). As a result, the program time can be reduced in the whole program operation. Because the process for transmitting the data from the cache register to the main register is omitted in the normal program operation, the circuit control operation can be simplified.

Abstract: A buffer memory status detection circuit has a binary logic gate (e.g. an OR gate) coupled to a comparator output signal that is asserted when a sum of a first address pointer of a FIFO memory array plus a first offset equals a second address pointer, and to a reset signal. Binary logic provides a binary output (i.e. “0” or “1”) in a first clock domain to two synchronization registers in series that convert the output to a second clock domain. An optional pipeline register improves timing of the output in the second clock domain, and is particularly desirable for use with high-speed clocks.

Abstract: There are intended to provide a semiconductor memory device capable of data access with higher speed and improvement of data transfer rate by shortening refresh operation cycle by stable low-current-consumption operation, and a control method of such a semiconductor memory device. In advance to the refresh operation mode signal M(I), control signal SW is outputted. Consequently, the switching sections select stored address bus Ladd from each storing section and stored-redundancy-judgment-result bus LJ and output address information subject to refresh operation to a word-line-driving-system circuit. After the address information from each storing section is outputted, a control signal LCH is outputted. As a result, an address switching section selects refresh address bys Add(I) subject to next refresh operation and each storing section stores address Add(I) fetched in an internal address bus IAdd and its redundancy judgment result RJ(I).

Abstract: In a DRAM, which includes a plurality of memory banks, there is a pair of separate flag bit registers for each bank with the flag bit registers that are shifted up/down respectively. A comparator for each bank provides a comparator output. An arbiter for each bank is connected to receive a flag bit up signal and a flag bit down signal from the flag bit registers for that bank and the comparator output from the comparator for that bank. The arbiters are connected to receive a conflict in signal and to provide a conflict out signal. The pair of flag bit registers represent a refresh status of each bank and designate memory banks or arrays that are ready for a refresh operation.

Abstract: A nonvolatile memory with a memory array arranged in rows and columns of memory cells in NOR configuration, the memory cells arranged on a same column being connected to one of a plurality of bit lines and a column decoder. The column decoder comprises a plurality of selection stages, each of which is connected to respective bit lines and receives first bit line addressing signals. The selection stages comprise word programming selectors controlled by the first bit line addressing signals and supplying a programming voltage to only one of the bit lines of each selection stage. Each selection stage moreover comprises a string programming selection circuit controlled by second bit line addressing signals thereby simultaneously supplying the programming voltage to a plurality of the bit lines of each selection stage.

Abstract: The present invention provides a speculatively loaded memory for use in a data processing system. The present invention may include a memory block including rows each identified by an address. A first register may store a first address of the memory block and a second register may store a second address of the memory block. A control circuit may be coupled to the first and second registers, and may receive control signals. The control circuit causes contents of the first register to be stored into the second register in response to a first state of the control signals, and the control circuit causes contents of the second register to be stored into the first register in response to a second state of the control signals.

Abstract: A content addressable memory (CAM) device is described including a plurality of storage locations, each arranged as a recirculating shift register, and plurality of bit comparators each coupled to a predetermined stage of a respective recirculating shift register for comparing the data contents of the predetermined stage with the data contents of a predetermined stage of a comparand register. The CAM is further coupled to a priority encoder for determining the highest priority match address.

Abstract: Register for the parallel-serial conversion of data having a plurality of cyclically driven shift registers (2), each comprising series-connected data holding elements (3), each data holding element (3) being connected to a data input line (5), each shift register (2), upon receiving an input control signal (INP) for the shift register (2), loading the data present on the data input lines (5) into the data holding elements (3) connected thereto; each shift register (2), upon receiving an output control signal (OUTP) for the shift register (2), outputting the datum buffer-stored in the last data holding element of the shift register (2), in which case there is connected downstream of each shift register (2) a further data holding element (10), which, upon receiving an input control signal (INP) for loading the preceding shift register (2), is preloaded with the datum for the first data holding element (3-3) of the shift register (2) and, upon reception of the output control signal (OUTP) for the shift register

Abstract: A non-volatile memory device capable of reading and writing a large number of memory cells in parallel has an architecture that reduces redundancy in the multiple read/write circuits to a minimum. In one aspect, data latches associated with the multiple read/write circuits are I/O enabled and coupled in a compact manner for storage and serial transfer. They are implemented by one or more chain of link modules, which can selectively behave as inverters or latches. A method enables the use of a minimum number of link modules by cycling data between a set of master link modules and a substantially smaller set of slave link modules.

Abstract: The present invention relates to an integrated circuit including at least one matrix network of identical elements capable of being individually addressed at least in a first direction and including, at least for this first direction, at least one redundancy element, and a circuit that reversibly inhibits the operation of a defective element and maintains the circuit operation by using the redundancy element. The integrated circuit also may include a circuit that definitely inhibits the operation of a defective element and maintains the circuit operation by using the redundancy element.

Abstract: A program counter circuit is composed of two kinds of registers, a down counter, an up counter, a selector, and a logic circuit. The two kinds of registers hold a pre-jump PC value and a post-jump PC value of a jump that is prescribed by a program. The down counter holds the number of repetitions of a repeat sequence that is prescribed by the program. The up counter holds a PC value that is counted up for each clock pulse. The selector selects, as a PC value to be output next, the post-jump PC value or the value that is held by the up counter. The logic circuit refers to the output value of the program counter and the output values of the registers and the down counter, and generates a signal that instructs the selector what PC value should be selected as the next output value.

Abstract: There is provided a method of entry of an operation mode of a semiconductor memory during operations without need of any specific timing specification and with effective suppression to any erroneous entry. If read cycles for plural addresses are continued, then, a request for entry of operation mode is accepted. In write cycles following to those read cycles, an operation mode to be entered is decided based on data externally designated, wherein in the first write cycle, the kind of the operation mode is set, and then in the next write cycle, conditions for the operation mode are set for the entry of the operation mode of the semiconductor memory.

Abstract: A semiconductor device includes a primary memory array, primary addressing circuitry, a redundant memory array, redundant addressing circuitry, and a first signal pad. The primary memory array includes primary memory elements operable to store data, and the primary addressing circuit is operable to select the primary memory elements. The redundant memory array includes redundant memory elements operable to store data and is also operable to be programmed from a programmable state to provide redundant memory elements for defective primary memory elements. The first signal pad is operable to receive serial selection data, and the redundant addressing circuit is connected to the first signal pad and is operable to receive the serial selection data from the first signal pad and select the redundant memory elements in response.

Abstract: A method and apparatus for a memory device including a burst architecture employs a double bus architecture that is multiplexed onto an output bus at clock rate that is doubled. The resulting architecture effectively doubles throughput without increasing memory device latency.

Abstract: An integrated memory contains an access controller for controlling an access for the purpose of reading data from, or writing data to, a memory cell array. The access controller accesses the memory cell array in a first double data rate operating mode of the memory in such a manner that a first data item (which is to be written) of an access cycle is written to the memory cell array with a write latency. In a second single data rate operating mode of the memory, the access controller, in contrast, accesses the memory cell array in such a manner that a first data item of an access cycle is, in contrast, written to the memory cell array in an accelerated manner without the write latency of the first operating mode. This makes it possible to read in data values in an accelerated manner in the second operating mode, in particular a test operating mode.

Abstract: An apparatus for the on-chip, soft repair of random access memory arrays. In representative embodiments, circuitry is disclosed which provides the ability to soft repair defective random access memory arrays. The disclosed techniques for repair of random access memory arrays do not use techniques such as laser repair in the removal of defective parts of the integrated circuit and its replacement with a redundant part. No additional processing steps are involved. The circuitry necessary to repair defects in random access memory arrays is included on-chip in the input/output blocks of the RAM.

Abstract: Techniques for preloading data into memory blocks on a programmable circuit are provided. Memory blocks on the a programmable circuit each have dedicated circuitry that loads data into the memory block. The dedicated circuit also generates memory addresses used to load the data into the memory block. The dedicated circuitry associated with each memory block reduces demand on the routing resources. A user can preload data into the memory blocks prior to user mode. A user can also prevent data from being preloaded into one or more of the memory blocks prior to user mode. By allowing the user to program some or all of the memory blocks prior to user mode, the time needed to a program the memory blocks prior to user mode can be substantially reduced.

Abstract: A package map data outputting circuit of a semiconductor memory device embedded with a test circuit and a method for the same are provided. To improve the reliability of package map data and easily output a greater amount of the package map data, the package map data is stored to package map data registers at the wafer level and then output through the test circuit at the package level.

Abstract: A writing device can change the direction of the magnetic moment in a magnetic shift register, thus writing information to the domains or bits in the magnetic shift register. Associated with each domain wall are large magnetic fringing fields. The domain wall concentrates the change in magnetism from one direction to another in a very small space. Depending on the nature of the domain wall, very large dipolar fringing fields can emanate from the domain wall. This characteristic of magnetic domains is used to write to the magnetic shift register. When the domain wall is moved close to another magnetic material, the large fields of the domain wall change the direction of the magnetic moment in the magnetic material, effectively “writing” to the magnetic material.

Abstract: To reduce cost of defect redundancy and trimming in a semiconductor integrated circuit having multiple layer wirings and copper wirings, an address for salvaging a defect of a memory cell array in a semiconductor is stored by using a nonvolatile memory element constituting a floating electrode by a first layer of polysilicon, or the nonvolatile memory element is programmed in testing the semiconductor integrated circuit. As a result, a special process is not needed in forming the nonvolatile memory element. In other words, the nonvolatile memory element can be formed in a process of forming a CMOS device and an apparatus of a laser beam for programming is not needed since the programming is carried out in testing. Thus, the time necessary for programming can be shortened, and, therefore, testing costs can be reduced.

Abstract: A memory device and method for selectable sub-array activation. In one preferred embodiment, a memory array is provided comprising a plurality of groups of sub-arrays and circuitry operative to simultaneously write data into and/or read data from a selected number of groups of sub-arrays. By selecting the number of groups of sub-arrays into which data is written and/or from which data is read, the write and/or read data rate is varied. Such varying can be used to prevent thermal run-away of the memory array. Other preferred embodiments are provided, and each of the preferred embodiments can be used alone or in combination with one another.

Abstract: The present invention is directed to a memory data interface for transferring data between a memory device and an integrated circuit, whereby, in accordance with one aspect of the present invention, the memory data interface includes a data selector for selecting and normalizing data from memory devices operating at different data transfer timing, and, in accordance with another aspect of the present invention, the memory data interface is capable of transferring data between a memory device and an integrated circuit having a different bus width than the memory device. In accordance with yet another aspect of the present invention, the memory data interface is capable of transferring data between an integrated circuit and a variety of different memory device having different data bus widths.

Abstract: The invention provides a method of programming in a nonvolatile semiconductor memory device, having a plurality of memory cell strings connected to a plurality of bitlines and constructed of a plurality of memory cell transistors whose gates are coupled to a plurality of wordlines, and a plurality of registers corresponding to the bitlines. The method involves applying a first voltage to a first one of the bitlines and applying a second voltage to a second one of the bitline, the first bitline being adjacent to the second bitline, the first and second voltages being supplied from the registers; electrically isolating the first and second bitlines from their corresponding registers; charging the first bitline up to a third voltage higher than the first voltage and lower than the second voltage; and applying a fourth voltage to a wordline after cutting off current paths into the first and second bitlines.

Abstract: A buffer circuit includes a plurality of registers, a write register selector, a read register selector, and an address proximity detector. The write register selector operates in synchronism with a write clock signal and outputs write enable signals in a predetermined sequence for write-enabling the plurality of registers, one at a time. The read register selector operates in synchronism with a read clock signal and outputs read enable signals in the predetermined sequence for read-enabling the plurality of registers to be read, one at a time. The address proximity detector detects an event in which a difference between a register write-enabled by one of the write enable signals and a different register read-enabled by one of the read enable signals at a time in the predetermined sequence is equal to a predetermined value and outputs a reset signal upon detecting such event.

Abstract: A decoder for use in wordline/bitline redundancy control is disclosed. In one aspect, the decoder includes first and second wordlines respectively coupled to redundant first and second wordlines, where the first and second wordlines are configured to be activated based on decoded first and second addresses. In addition, the decoder includes first and second shift registers respectively coupled to the redundant first and second wordlines, where each is configured to respectively activate the redundant first and second wordlines when the first or second wordlines contain a defect. In addition, a method of selecting wordlines for use in wordline/bitline redundancy control and a wordline decoder having redundancy control capabilities are also disclosed.

Abstract: A memory access scheme employing one or more sets of shift registers interconnected in series to which data may be loaded from or written into one or more memory devices. That is, data from the memory devices may be parallel loaded into the sets of shift registers and then serially shifted through the shift registers until it is output from the sets of shift registers and transferred to its destination. Additionally, the data may be read from and loaded into the memory devices to/from the sets of shift registers such that the shifting of the shift registers is uninterrupted during the reading and/or loading of data. Additionally, data from the memory devices may be loaded into two or more parallel chains of shift registers and then serially shifted through the shift register chains.