Abstract: An electronic device includes an error correction circuit configured to detect an error included in internal data, to generate a failure detection signal during a read operation, and to correct the error included in the internal data during a refresh operation, and a core circuit configured to store an address signal for activating a word line in which the internal data including the error is stored through as a failure address signal when the failure detection signal is input to the core circuit, and store the error-corrected internal data in the core circuit through a word line activated by the failure address signal during the refresh operation.

Abstract: A semiconductor device includes: a memory circuit having a plurality of quadrants arranged at corners of the memory circuit and surrounding a bank control component; wherein a first quadrant of the plurality of quadrants includes a first bit cell core and a first set of input output circuits configured to access the first bit cell core, the first quadrant defined by a rectangular boundary that encloses portions of two perpendicular edges of the memory circuit; wherein a second quadrant of the plurality of quadrants includes a second bit cell core and a second set of input output circuits configured to access the second bit cell core, the second quadrant being adjacent the first quadrant, wherein a border between the first quadrant and the second quadrant defines a first axis about which the first quadrant and the second quadrant are symmetrical.

Abstract: Embodiments provide a scheme for non-parametric PV-level modeling and an optimal read threshold voltage estimation in a memory system. A controller is configured to: generate multiple optimal read threshold voltages corresponding to multiple sets of two cumulative distribution function (CDF) values, respectively; perform read operations on the cells using a plurality of read threshold voltages; generate cumulative mass function (CMF) samples based on the results of the read operations; receive first and second CDF values, selected from among a plurality of CDF values, each CDF value corresponding to each CMF sample; and estimate an optimal read threshold voltage corresponding to the first and second CDF values, among the multiple optimal read threshold voltages.

Abstract: A semiconductor memory device includes first and second memory cell transistors between first and second select transistors, third and fourth memory cell transistors between third and fourth select transistors, a first word line for first and third memory cell transistors, a second word line for second and fourth memory cell transistors, first to fourth selection gate lines respectively for first through fourth select transistors, a bit line, and a source line. During a read operation, while a voltage applied to the second word line is boosted, voltages applied to the first word line and the third and fourth selection gate line are also boosted, after which the voltage applied to the first word line is lowered, and the third and fourth selection gate lines are discharged. After the time the third and fourth selection gate lines are discharged, voltages applied to the bit line and the source line are boosted.

Abstract: Systems, apparatuses, and methods related to organizing data to correspond to a matrix at a memory device are described. Data can be organized by circuitry coupled to an array of memory cells prior to the processing resources executing instructions on the data. The organization of data may thus occur on a memory device, rather than at an external processor. A controller coupled to the array of memory cells may direct the circuitry to organize the data in a matrix configuration to prepare the data for processing by the processing resources. The circuitry may be or include a column decode circuitry that organizes the data based on a command from the host associated with the processing resource. For example, data read in a prefetch operation may be selected to correspond to rows or columns of a matrix configuration.

Abstract: A memory device includes a memory array of memory cells. A page buffer is to apply, to a bit line, a first voltage or a second voltage that is higher than the first voltage during a program verify operation. Control logic operatively coupled with the page buffer is to perform operations including: causing a plurality of memory cells to be programmed with a first program pulse; measuring a threshold voltage for the memory cells; forming a threshold voltage distribution from the measured threshold voltages; classifying, based on the threshold voltage distribution, a first subset of the memory cells as having a faster quick charge loss than that of a second subset of the memory cells; and causing, in response to the classifying, the page buffer to apply the second voltage to the bit line during a program verify operation performed on any of the first subset of memory cells.

Abstract: An integrated circuit includes: a cell array including a plurality of memory cells in a plurality of first columns and including a plurality of word line assist cells in at least one second column; a plurality of word lines respectively extending on a plurality of first rows of the cell array and connected to the plurality of memory cells and the plurality of word line assist cells; and a row driver configured to drive the plurality of word lines.

Abstract: Systems, methods and apparatus to determine a programming mode of a set of memory cells that store an indicator of the programming mode. In response to a command to read the memory cells in a memory device, a first read voltage is applied to the memory cells to identify a first subset of the memory cells that become conductive under the first read voltage. The determination of the first subset is configured as an operation common to different programming modes. Based on whether the first subset of the memory cell includes one or more predefined memory cells, the memory device determines a programming mode of memory cells. Once the programming mode is identified from the common operation, the memory device can further execute the command to determine a data item stored, via the programming mode, in the memory cells.

Abstract: A new device executing an application on a new central processing unit (CPU), determines whether the application is for a legacy device having a legacy CPU. When the new device determines that the application is for the legacy device, it executes the application on the new CPU with selected available resources of the new device restricted to approximate or match a processing behavior of the legacy CPU.

Abstract: A memory device includes a plurality of memory cells; a word line, connected to one of the plurality of memory cells, that is configured to provide a first WL pulse having a rising edge and a falling edge that define a pulse width of the first WL pulse; a first tracking WL, formed adjacent to the memory cells, that is configured to provide, via being physically or operatively coupled to a bit line (BL) configured to write a logic state to the memory cell, a second WL pulse having a rising edge with a decreased slope; and a first tracking BL, configured to emulate the BL, that is coupled to the first tracking WL such that the pulse width of the first WL pulse is increased based on the decreased slope of the rising edge of the second WL pulse.

Abstract: According to one embodiment, a semiconductor integrated circuit includes a first circuit, a second circuit, a third circuit, and a switch circuit. The second circuit is different from the first circuit. The third circuit is configured to adjust a timing of an edge of a signal. The switch circuit is configured to connect the third circuit to the first circuit in a case where a first signal is output from the first circuit to an outside of the semiconductor integrated circuit, and configured to connect the third circuit to the second circuit in a case where a second signal is output from the second circuit to the outside, the second signal being different from the first signal.

Abstract: Methods, systems, and devices for sensing techniques for a memory cell are described to enable a latch to sense a logic state of a memory cell. A transistor coupled with a memory cell may boost a first voltage associated with the memory cell to a second voltage via one or more parasitic capacitances of the transistor. The second voltage may be developed on a first node of a sense component, and the second voltage may be shifted to a third voltage at a first node of the sense component by applying a voltage to a shift node coupled with a capacitor of the sense component. Similar boosting and shifting operations may be performed to develop a reference voltage on a second node of the sense component. The sense component may sense the state of the memory cell by comparing with the reference voltage.

Abstract: A semiconductor device includes an error correction circuit and a refresh control circuit. The error correction circuit is configured to detect an error included in internal data, to generate a failure detection signal, and to correct the error of the internal data. The refresh control circuit is configured to store an address signal for selecting the internal data in response to the failure detection signal. In addition, the refresh control circuit is configured to generate a refresh address signal for activating a word line connected to memory cells storing the internal data from the address signal when a refresh signal is inputted to the refresh control circuit by a predetermined number of times.

Abstract: A memory cell includes: a latch, powered by a first reference voltage and a second reference voltage different from the first reference voltage, and having a first connecting terminal and a second connecting terminal; a first programmable fuse, having a first terminal coupled to the first connecting terminal and a second terminal coupled to the second reference voltage; and a second programmable fuse, having a first terminal coupled to the second connecting terminal and a second terminal coupled to the second reference voltage.

Abstract: A storage device includes a memory device including a plurality of memory cells respectively storing data having a plurality of bits, and a memory controller including an operation block including a plurality of unit circuits executing a predetermined function, and a core block executing a control operation on the plurality of memory cells in response to a command from a host. The core block selects at least portions of the plurality of unit circuits to determine selection unit circuits, and generates a control command specifying an operation order of the selection unit circuits. In the operation block, the selection unit circuits operate by the operation order to determine a control voltage required for the control operation, and store the control voltage in at least one of the memory controller or the memory device.

Abstract: An electronic control device is configured to execute processing unit execution operation while executing processing part activation operation. In the processing part activation operation, the activation main processing is performed separately on each of a plurality of processing parts included in a control program, and a start address of a processing unit that is included in a processing part for which the activation main processing has been completed is switched from invalid to valid, in ascending order of the lengths of activation time demanded of the processing parts to be ready for execution. In the processing unit execution operation, a processing unit that is associated with a start address switched to valid is executed.

Abstract: The present disclosure relates to a structure including a read controller configured to receive a burst enable signal and a word line pulse signal, identify consecutive read operations from storage cells accessed via a word line, precharge bit lines once during consecutive, sequential reads, and hold the word line active through N?1 of the consecutive read operations, and N is an integer number of the consecutive read operations.

Abstract: A method for data recovery in a memory array of a non-volatile memory system, wherein the method comprises detecting an electrical short between a word line (WL) of a memory cell transistor and a local source line (LI) of a memory structure of the array, increasing an initial voltage bias at the local source line to a second voltage bias that exceeds a threshold voltage of the shorted memory cell transistor and a voltage level of a bit line of the memory structure, thereby causing a sensing current to flow in a direction from the local source line to the bit line, and sensing at a sense amplifier of the memory structure the sensing current.

Abstract: A variety of applications can include apparatus and/or methods of operating the apparatus that include a memory device having read levels that can be calibrated. A calibration controller implemented with the memory device can trigger a read level calibration based on inputs from one or more trackers monitoring parameters associated with the memory device and a determination of an occurrence of at least one event from a set of events related to the monitored parameters. The monitored parameters can include parameters related to a selected time interval and measurements of read, erase, or write operations of the memory device. Additional apparatus, systems, and methods are disclosed.

Abstract: A circuit includes a bias voltage generator and a current limiter. The bias voltage generator is configured to receive a first reference voltage and output a bias voltage responsive to a first current and the first reference voltage. The current limiter is configured to receive a second current at an input terminal, a second reference voltage, and the bias voltage, and, responsive to the second reference voltage and a voltage level of the input terminal, limit the second current to a current limit level, the voltage level of the input terminal being based on the bias voltage.

Abstract: A converged memory device includes at least a first memory and a second memory and a controller to select the first or second memory for performing fast or normal data processing, respectively, in response to a request from a host. The first memory includes a sense amplifier, one or more cell matrices, and a switching device. The cell matrices includes one or more first region memory cells disposed less than a first distance from the sense amplifier and one or more second region memory cells disposed more than a second distance from the sense amplifier, the second distance being longer than the first distance. The switching device is disposed between the first and second region memory cells. The controller controls the switching device to couple the first region memory cells to the sense amplifier and to decouple the second region memory cells from the sense amplifier according to the request.

Abstract: A semiconductor device includes a first rank and a second rank. The first rank operates in synchronization with a clock signal in response to a first rank selection signal, and the second rank operates in synchronization with the clock signal in response to a second rank selection signal. The first rank performs a termination operation without performing an internal control operation if the first rank selection signal maintains an enabled state in synchronization with a first edge and a second edge of the clock signal.

Abstract: A memory component includes a first memory bank. The first memory bank has a plurality of sub-arrays having sub-rows of memory elements. The memory component includes a write driver, coupled to the first memory bank, to perform a write operation of an entire sub-row of a sub-array. To perform the write operation, the write driver is to load a burst of write data to the memory bank. The memory bank may then activate a plurality of sense amplifiers associated with a plurality of memory elements of the entire sub-row to load the burst of write data to the plurality of sense amplifiers.

Abstract: A system includes at least one Input/Output (I/O) interface and a processor. The processor is coupled to the at least one I/O interface. The processor is configured to perform, according to a file or a rule inputted from the at least one I/O interface, operations below. When the at least one condition is present in a signal to be received or transmitted by a terminal of a cell, a plurality of conductive segments is assigned to the terminal of the cell, to transmit the signal to the terminal of the cell. When the at least one condition one is not present in the signal, a single route is assigned to the terminal of the cell, to transmit the signal to the terminal of the cell. The single route and each of the conductive segments are configured to have the same width.

Abstract: Examples of techniques for emulating an application-specific integrated circuit (ASIC) array using a field programmable gate array (FPGA) are disclosed. In one example implementation according to aspects of the present disclosure, a method may include loading configuration information to the FPGA, wherein the configuration information is representative of configuration information of the ASIC. The method may further include emulating the ASIC using the FPGA loaded with the configuration information by applying a fast emulation clock signal to the FPGA. The fast emulation clock signal is a multiple of a system clock signal.

Abstract: The disclosed technology relates to a memory device configured to perform multiple access operations in response to a single command received through a memory controller and a method of performing the multiple access operations. In one aspect, the memory device includes a memory array comprising a plurality of memory cells and a memory controller. The memory controller is configured to receive a single command which specifies a plurality of memory access operations to be performed on the memory array. The memory controller is further configured to cause the specified plurality of memory access operations to be performed on the memory array.

Abstract: A semiconductor storage device provided can increase a write margin and suppress increase of a chip area. The semiconductor storage device includes plural memory cells arranged in a matrix; plural bit-line pairs arranged corresponding to each column of the memory cells; a write driver circuit which transmits data to a bit-line pair of a selected column according to write data; and a write assist circuit which drives a bit line on a low potential side of the bit-line pair of a selected column to a negative voltage level. The write assist circuit includes first signal wiring; a first driver circuit which drives the first signal wiring according to a control signal; and second signal wiring which is coupled to the bit line on the low-potential side and generates a negative voltage by the driving of the first driver circuit, based on inter-wire coupling capacitance with the first signal wiring.

Abstract: A management device for a volatile semiconductor memory includes: a request generator configured to output a refresh request requesting a refresh operation of a target cell in the volatile semiconductor memory; and a refresh operator configured to execute the refresh operation of the target cell requested in the refresh request outputted by the request generator. The request generator repeatedly outputs the refresh request for a same target cell in the volatile semiconductor memory intermittently at unequal intervals with each two successive intervals being different from each other.

Abstract: The invention pertains to semiconductor memories, and more particularly to enhancing the reliability of stacked memory devices. Apparatuses and methods are described for implementing RAID-style error correction to increase the reliability of the stacked memory devices.

Abstract: A semiconductor device may include a plurality of memory banks, a plurality of mode registers that may control an operational mode associated with each of the plurality of memory banks, and a set of global wiring lines coupled to each of the plurality of mode registers. The set of global wiring lines may include a first global wiring line to transmit data to each of the plurality of mode registers, a second global wiring line to transmit an address signal to each of the plurality of mode registers, a third global wiring line to transmit a read command signal to each of the plurality of mode registers, and a fourth global wiring line to transmit a write command signal to each of the plurality of mode registers.

Abstract: A semiconductor device includes a first rank and a second rank. The first rank operates in synchronization with a clock signal in response to a first rank selection signal, and the second rank operates in synchronization with the clock signal in response to a second rank selection signal. The first rank performs a termination operation without performing an internal control operation if the first rank selection signal maintains an enabled state in synchronization with a first edge and a second edge of the clock signal.

Abstract: According to one embodiment, a memory controller transmits a first instruction to a memory device. The memory device includes cell transistors; word lines coupled to gates of the cell transistors; a first data latch; and a second latch. The first instruction instructs application of a positive voltage to one of the word lines. The memory controller transmits a second instruction after the transmission of the first instruction and before transmitting a third instruction. The third instruction instructs output of data from the memory device. The second instruction is different from the third instruction and a fourth instruction instructing copy of data from the first data latch to the second data latch.

Abstract: A memory array having a first port and a second port is disclosed. The memory array includes: a first memory cell, wherein access to the first memory cell through the first port is controlled by a first word line, and access to the first memory cell through the second port is controlled by a second word line; a second memory cell, wherein access to the second memory cell through the first port is controlled by the first word line, and access to the second memory cell through the second port is controlled by the second word line; and a disturb detector, used to generate a disturb detected signal for indicating whether the first memory cell and the second memory cell are accessed at a same time. A memory array having a write assistor is also disclosed.

Abstract: A nonvolatile memory device may include a plurality of cell strings including a plurality of memory cells serially coupled to one another; a plurality of bit lines coupled to a corresponding cell string of the plurality of cell strings; a plurality of page buffers each including a plurality of latches and coupled to a corresponding bit line of the plurality of bit lines; a first control circuit suitable for controlling the plurality of latches to perform an operation corresponding to an activated command signal of a plurality of command signals in an access operation; and a second control circuit suitable for activating one or more of the plurality of command signals, while controlling operations of the plurality of cell strings and the plurality of bit lines in the access operation.

Abstract: A semiconductor memory device includes a memory cell array, a peripheral circuit and a control logic. The memory cell array includes a plurality of memory cells each of which stores 2 or more bits of data. The peripheral circuit is configured to perform a program operation for the memory cells in the memory cell array. The control logic is configured to control the peripheral circuit and the memory cell array such that, during a program operation for target memory cells to be programmed among the memory cells, a preprogram for memory cells to be programmed to the highest program state is performed based on a predetermined value, and after the preprogram has been performed, a main program for the target memory cells to be programmed is performed.

Abstract: A method for storing information in SRAM bit cell arrays provides for lowering voltage supplied to the SRAM bit cell arrays, with voltage lowering controlled by a connected voltage control circuit. Writing, reading, and correcting information storable in the SRAM bit cell arrays is accomplished using an error correcting code (ECC) block connected to at least some of the SRAM bit cell arrays. The ECC block is configurable to repair stored information.

Abstract: A method, apparatus and system for reducing memory latency is disclosed. In one embodiment, data between a host computer system and a memory is communicated via a port or a group of ports at the memory over multiple time intervals, wherein the host computer is coupled to the memory. Further, a command associated with the data is communicated between the host computer system and the memory via the port or the group of ports over a single time interval.

Abstract: A memory includes a plurality of memory blocks, a plurality of sensing circuits, a plurality of global bit lines, a common pre-charging circuit and a selection circuit. Each global bit line of the plurality of global bit lines is coupled to at least one of the memory blocks by a corresponding sensing circuit of the plurality of sensing circuits. The common pre-charging circuit is configured to individually pre-charge each global bit line of the plurality of global bit lines to a pre-charge voltage. The selection circuit is configured to selectively couple the common pre-charging circuit to a selected global bit line of the plurality of global bit lines.

Abstract: A semiconductor device (100) according to an embodiment calculates the number of times of burst access for an address set (A) based on a result of a determination, for each of N addresses a1 to an (N is a natural number no less than two) included in the address set (A), whether or not the address and another address adjacent to that address in an accessing order can be accessed by the same burst access, and calculates an access time that will be taken for accessing the address set by the burst access.

Abstract: A memory device includes a memory cell, a local bit line, a data line, first and second pass gate circuits, and a sense amplifier. The local bit line is coupled to the memory cell. The first pass gate circuit is coupled to the local bit line and the data line and is configured to couple the local bit line to the data line. The second pass gate circuit is coupled to the data line and the global bit line and is configured to couple the data line to the global bit line. The sense amplifier is coupled to the data line.

Abstract: Systems, among other embodiments, include topologies (data and/or control/address information) between an integrated circuit buffer device (that may be coupled to a master, such as a memory controller) and a plurality of integrated circuit memory devices. For example, data may be provided between the plurality of integrated circuit memory devices and the integrated circuit buffer device using separate segmented (or point-to-point link) signal paths in response to control/address information provided from the integrated circuit buffer device to the plurality of integrated circuit buffer devices using a single fly-by (or bus) signal path. An integrated circuit buffer device enables configurable effective memory organization of the plurality of integrated circuit memory devices. The memory organization represented by the integrated circuit buffer device to a memory controller may be different than the actual memory organization behind or coupled to the integrated circuit buffer device.

Abstract: A module for a data bus comprises a terminal. The terminal comprises two opposite outer faces, each comprising at least one contact, wherein the two contacts are connected by means of an internal data-bus line for forwarding data through the terminal via said internal data bus. The module further comprises a software-protection unit which is integrated into the terminal and connected to said data-bus line.

Abstract: In a reconfigurable data strobe-based memory system, data strobes may be re-tasked in different modes of operation. For example, in one mode of operation a differential data strobe may be used as a timing reference for a given set of data signals. In a second mode of operation, one of the components of the differential data strobe may be used as a timing reference for a first portion of the set of data signals and the other component used as a timing reference for a second portion of the set of data signals. Different data mask-related schemes also may be invoked for different modes of operation. For example, in a first mode of operation a memory controller may generate a data mask signal to prevent a portion of a set of data from being written to a memory array. Then, in a second mode of operation the memory controller may invoke a coded value replacement scheme or a data strobe transition inhibition scheme to prevent a portion of a set of data from being written to a memory array.

Abstract: Described is an apparatus comprising a plurality of memory arrays, local write assist logic units, and read/write local column multiplexers coupled together in a group such that area occupied by the local write assist logic units and the read/write local column multiplexers in the group is smaller than it would be when global write assist logic units and the read/write global column multiplexers are used. Described is a dual input level-shifter with integrated latch. Described is an apparatus which comprises: a write assist pulse generator operating on a first power supply; one or more pull-up devices coupled to the write assist pulse generator, the one or more pull-up devices operating on a second power supply different from the first power supply; and an output node to provide power supply to a memory cell.

Abstract: A method and apparatus for memory paging is disclosed. A system includes a plurality of processor cores each configured to initiate requests to a memory by providing a physical address without a virtual address. A first cache subsystem is shared by each of a first subset of the plurality of processor cores. Responsive to receiving a memory access request from a processor core of the first subset, the first cache subsystem determines if a physical address of the request is in a first paged region of memory with respect to the first subset. If the physical address is in the paged region, the cache subsystem is configured to access a set of page attributes for a page corresponding to the physical address from a page attribute table responsive that is shared by each of the first subset of the plurality of processor cores.

Abstract: A semiconductor device enabling expansion of a noise margin. For example, in a memory area in which each memory cell MC is coupled to a word line WLA for a first port and a word line WLB for a second port, and a plurality of memory cells MC are disposed in a matrix shape, each word line is disposed in the order of WLA0, WLB0, WLB1, WLA1, WLA2. Further, a pitch d2 between WLA-WLA and between WLB-WLB is made smaller than a pitch d1 between WLA-WLB. As such, the word lines of an identical port are disposed at the pitch d2 on one of both sides of a certain word line and the word lines of different ports are disposed at the pitch d1 on the other.

Abstract: Systems and methods for data retention manager in a solid state storage system utilizing temperature measurement mechanisms are disclosed. Background data scanning can provide an efficient way to monitor data health and can be used to determine whether data refreshing is needed or to prevent data retention from degrading beyond error correction capabilities. In certain embodiments, data scanning may be performed as a background process regularly, for example, every month. However, effects of temperature on data retention may not be adequately accounted for using such methods. Certain embodiments disclosed herein provide a numerical integral method for taking account the system temperature by using the acceleration factor for data retention. Embodiments disclosed herein may provide for accurate handling of data retention in view of complex device temperature history.

Abstract: An input circuit of a semiconductor apparatus may include a first input buffer configured to receive a signal through a test input terminal and to output a first input signal, a second input buffer configured to receive a signal through a normal input terminal and to output a second input signal. The input circuit of the semiconductor apparatus may include a switching unit configured to transfer the signal inputted through the test input terminal to the second input buffer according to a test mode signal. The input circuit of the semiconductor apparatus may include a comparison unit configured to compare the first input signal with the second input signal and to generate a comparison signal, and a storage unit configured to store the comparison signal.

Abstract: Various techniques are provided to efficiently implement user designs in programmable logic devices (PLDs). In one example, a computer-implemented method includes receiving a design identifying operations to be performed by a PLD and synthesizing the design into a plurality of PLD components. The synthesizing includes detecting a mixed-mode memory operation in the design. The mixed-mode memory operation specifies memory access having different read and write data widths using a plurality of embedded memory blocks each having a fixed data width. The synthesizing further includes determining a reduced number of embedded memory blocks to implement the mixed-mode memory operation, and modifying the mixed-mode memory operation to remap the memory access to the reduced number of embedded memory blocks.

Abstract: Embodiments of the present technology are directed toward techniques for enabling different memory partitions to have different memory depths.