Abstract: A memory includes a memory array, a sense amplifier, and a reference circuit. The memory array includes a memory cell. The sense amplifier includes a first terminal coupled to the memory cell and a second terminal. The reference circuit includes a first reference cell, a second reference cell, and a switch. The first reference cell has a first reference threshold voltage for providing a first reference current, based on a first reference word line voltage. The second reference cell has a second reference threshold voltage for providing a second reference current, based on a second reference word line voltage. The switch selectively provides one of the first and the second reference currents to the second terminal in response to a control signal. The first and the second reference word line voltages correspond to different voltage levels.

Abstract: The invention relates to a complex of ruthenium of the structural formula I, 1

Abstract: A pulse generator circuit for non-volatile memories, is disclosed, including a circuit for determining the instant at which a pulse for incrementing a counter of the memory is generated and generating an increment pulse duration start signal; a circuit for determining the minimum amplitude of the increment pulse and generating an increment pulse duration end signal; a first logic circuit for enabling the generation of the increment pulse based upon the increment pulse duration start and end signals; and an increment pulse generation circuit for generating or suppressing the increment pulse of the counter of the memory, based upon the current condition of the memory.