Abstract: In an example, the present invention provides a memory interface device. The device has a command interface, address interface, and a control interface device coupled, respectively, to a command address bus, an address bus, and a control interface bus of a host memory controller. The device has a status signal interface configured to output a status signal coupled to the data interface bus of the host memory controller. In an example, the status signal is asserted in an absence of data asserted on the data interface bus.

Abstract: Embodiments of the present disclosure disclose an overlay key including at least two overlay marks each having a first sub-mark and a second sub-mark centro-symmetrical to each other, the first sub-mark and the second sub-mark each including two bar patterns that are perpendicular to each other and have a common end. At least two of the overlay marks are located in different layers. Also disclosed is a method of forming the overlay key and a method of measuring overlay accuracy.

Abstract: A semiconductor memory device is provided which can achieve high performance, such as an improvement in reliability, an improvement in yield, and the like, without increasing the chip area. The semiconductor memory device is a non-volatile semiconductor memory device operable to program and erase data, and hold the data in the absence of a supplied voltage, comprising a memory cell including a first charge localized portion and a second charge localized portion each operable to store static charge corresponding to the data. The second charge localized portion stores static charge corresponding to static charge which should be stored in the first charge localized portion, thereby serving as a backup to the first charge localized portion.

Abstract: A non-physical movement component recording and reproducing device produces a pair of special waves with special waveforms that form a special stationary waveform. An electrically-conducting media contains three overlaid layers, a first layer contains the special stationary waveform, a middle layer allows signals to be recorded or be reproduced therein, and a third layer allows the signals to be connected. Two diodes are connected in reverse polarity to the third layer wherein one diode is used for recording and reproducing signals, while the other diode is used for erasing unused signals during the recording process. The bias voltage of the diodes is bigger than the peak value of the special waveform, but less than the maximum peak value of the special stationary waveform. The control unit changes at least one of the intermittence length and the phase of the special waves.

Abstract: The invention relates to a magnetic bubble store.This store comprises a magnetic garnet layer (1), in which can be formed magnetic bubbles, which are respectively localized by cells. Each cell comprises a pair of localization windows (2, 3), respectively cut from conductive strips (4, 5) of a pair of conductive strips. These strips are insulated from one another and from the garnet and can be respectively traversed by currents (I.sub.1, I.sub.2) for displacing the bubble optionally located in the cell and means (21) for detecting each bubble. The memory is characterized in that the strips of each pair of strips have directions (X, Y) perpendicular to one another, the currents (I.sub.1 I.sub.2) in said strips being respectively parallel to said directions (X, Y).

Abstract: A magnetic bubble memory is formed of a series of longitudinally oriented minor registers and at least one transversely oriented major access register, all of these registers having patterns with boundaries defined by ionically implanted zones of a magnetic garnet layer. The memory is formed also with a structure for transferring bubbles from one end of the minor register to the major register, and is further configured with layered material having a predetermined format for displacing the bubbles in each minor register upon application of a rotating magnetic field. The physical structure of the memory also permits a displacement of the bubbles of the major register by the circulation of currents in two electrically conductive sheets which are superimposed on the magnetic garnet layer.

Abstract: In a magnetic layer of a magnetooptical modulator having fixed magnetic single domain areas, the areas of the layer present between the single domain areas are made electrically conductive by reduction.

Abstract: A magnetic domain device has at least one post element formed from a material that exhibits magnetic domain characteristics and that is positioned on a nonmagnetic substrate material. A pair of electrical drive lines associated with a post element permit coincident current selection of the post element to nucleate a magnetic domain reversal, and an additional current introduced into an adjacent drive line establishes an additive magnetic field to assist the propagation of a domain wall associated with the nucleated magnetic domain reversal so that the direction of magnetization of the post element is reversed.

Abstract: The invention relates to a magnetic bubble memory having a first layer of monocrystalline magnetic material with at least one crystallographic axis having the property of being aplanar easy magnetization axis, whereby the first layer has groups of unimplanted, contiguous and aligned motifs, called first motifs, permitting the propagation of the bubbles into a second magnetic layer, positioned below the first magnetic layer, the first motifs being shaped in such a way that two cavities are defined between two first adjacent motifs, wherein each group of first motifs has an axis such that the first motifs of the group are arranged symmetrically with respect to the axis, the groups being arranged parallel to the crystallographic axis of the first layer of material, and wherein it comprises, associated with each group, an electrical conductor, called the first conductor, permitting the duplication of the bubbles, each conductor being arranged perpendicular to the crystallographic axis of the first layer of materi

Abstract: This device comprises an ionically implanted magnetic garnet layer, in which are defined non-implanted patterns and an electrically conductive layer superimposed on the garnet layer and insulated therefrom. The patterns are islands which are separated from one another. The electrically conductive layer has a first conductive coating having windows parallel to the first direction for respectively displacing the bubbles located between the patterns of the first pairs of patterns arranged parallel to a first direction, by a pulse-type current parallel to a first direction. The electrically conductive layer also has a second conductive coating superimposed on the first conductive coating and insulated therefrom and which has windows parallel to a second direction in order to respectively displace the bubbles between the patterns of the second pairs of patterns arranged parallel to a second direction, by a pulse-type current parallel to a second direction.

Abstract: A magnetic bubble store including at least two series of longitudinally oriented major shift registers and a rotating magnetic field for producing a displacement of the bubbles in the minor registers. The series of minor registers are respectively arranged on either side of a transverse boundary. The minor registers of each of the series are constituted by motifs defined by ion implantation in a magnetic garnet layer. On either side of the boundary, these motifs define complementary distributions of implanted areas and non-implanted area.

Abstract: A current-controlled domain memory comprises a register for propagating magnetic domains in a magnetizable layer. The register comprises a meandering current-conductor pattern. The pattern can be driven by a bipolar current. The current conductors have a width of approximately one domain diameter and a meander period of approximately four domain diameters. The conductor pattern is provided with two control elements per period which generate potential wells in the magnetizable layer of a size of approximately one domain cross-section and which are arranged to center the centers of the domains on the edges of the conductor pattern when the current through the conductor pattern is zero.

Abstract: A magnetic bubble store formed of a series of longitudinally oriented shift registers and at least one transversely oriented access contour register having a single access point corresponding to each access end of each longitudinally oriented shift register, wherein magnetic bubbles are displaced in the longitudinally oriented shift registers by applying a rotary magnetic field thereto, and wherein magnetic bubbles are displaced in the transversely oriented access contour register by applying an electric current thereto. The longitudinally oriented registers are formed of motifs defined by ion implantation in a magnetic garnet layer.

Abstract: A detector for magnetic bubble domain devices including an input path for receiving and propagating magnetic bubble domains, an expander device which intersects the input path and functions to expand the bubble domain in a first direction, and a replication device which intersects the expander and functions to cut the expanded bubble into a plurality of magnetic bubble domains and to expand the bubble domain in a second direction. A plurality of detector strips are disposed along the second direction functioning to detect the plurality of magnetic bubble domains.

Abstract: In a dual-conductor type current-access magnetic bubble memory, a major loop is provided with a zigzag propagation path through which the major loop is connected with a plurality of minor loops, and transfer gates between the major and respective minor loops are formed by juxtaposing in parallel and partially superposing a pair of apertures of the same pattern upon each other and are surrounded by a gate control conductor, whereby bubbles can successively be transferred between the major and minor loops with a current sequence for normal propagation in the major and minor loops when a gate current is applied to the gate control conductor.

Abstract: A dual-conductor type current-access magnetic bubble device comprises apertured conductors on which apertured magnetic sheets having the same configuration as the corresponding conductors are disposed, whereby magnetic poles are induced on each aperture of the magnetic sheets by the in-plane magnetic field generated by the current applied to the corresponding conductors to reduce the driving current required for bubble propagation, while stable regions are formed in the substrate by the magnetic poles induced by the bubbles at the boundaries of the apertures of the magnetic sheets at the time of service interruption. The device is further provided with a magnetic rail having side walls on which magnetic poles are induced by the stray flux of the bubbles in the substrate, thereby to have stable bubble-rest regions formed in the substrate at the time of service interruption by the magnetic poles induced on the walls.

Abstract: A conductor-access, magnetic bubble memory organized in the major-minor mode has minor loops separated into minor loop segments. The segments can be powered for moving bubbles selectively only within the corresponding segments of the minor loops. A transfer operation moves bubbles between minor loop segments permitting bubble movement to the major loop. The ability to move bubbles only in a selected set of corresponding segments of the loops at a time permits operation with highly attractive power requirements.

Abstract: A magnetic bubble circuit and process for the manufacture of same is disclosed in which a pattern of permalloy elements is overlaid on a substantially planar surface contiguous with the top surface of an underlying pattern of conducting elements. This structure is fabricated by including a metal or metal alloy film on the substrate and selectively anodizing the film to produce conducting and nonconducting regions having coplanar surfaces.

Abstract: A domain drag effect stripline pattern of conductive magnetic bubble material deposited upon a substrate is located in a magnetic bias field preferably normal to the plane of the stripline. Magnetic bubbles can be propagated through the stripline in response to passage of D.C. current pulses through the stripline. The width and cross-sectional area of the stripline is preferably substantially constant except at a switching area where it may be different, and preferably wider. There a coil is juxtaposed with the stripline to apply a magnetic field upon the switching area with the magnetic field varying above and below a critical value to switch the propagation of magnetic bubbles along the stripline on and off as a function of the current through the coil. Alternatively, the external magnetic bias field can be modulated to turn the stripline switch on and off.

Abstract: A magnetic domain device comprising a layer of a magnetic material for the formation of magnetic domains, for example bubbles, under the influence of a bias magnetic field and a propagation structure with magnetically operating elements for driving the magnetic domains by the sequential formation thereon of preferred positions for the domains. The current conductors used to propagate the domains, either meander conductors or rotary field "coils", are arranged on a layer of silicon, so that the heat developed in the current conductors can readily be carried off by the silicon which exhibits a good thermal conductivity.

Abstract: Continuous film type, current-access bubble memories are designed for low power operation by including, along the current paths, areas of reduced width. The areas of reduced widths are characterized by relatively high current densities, which are preferred, for example, for expansion detected or operation, without an increase in power consumption.

Abstract: A device for storing digital information in the form of magnetic domains including at least two ferrimagnetic layers on a substrate. The ferrimagnetic layers are separated by a compensation wall and in the presence of a bias magnetic field single magnetic domains and superposed magnetic domain pairs, the superposed domains being separated by a compensation wall, are generated. All single and superposed domains are mutually repulsive. The domains within a superposed pair are attracted to each other. The generated domains are propagated to a shift register and when the reigster is filled a row of domains is coincidentally propagated, transversely out of the register, to a domain array region adjacent the register. Rows are then propagated through the array region to a second shift register where they are individually detected and annihilated. A control device assures the proper working relationship between all elements.

Abstract: A conductor access, magnetic bubble memory is organized in a major-minor mode by including transfer locations in the conducting layers which define the normal bubble propagation implementation. An attractive partitioning of each of the two conducting layers permits the minor loops and the major loop to be operated synchronously or independently resulting in short duty cycles which permit low power operation to be achieved.

Abstract: An expander-detector arrangement for a conductor-access, magnetic bubble memory is realized by the inclusion in an electrically-conducting layer in which bubble propagation currents are impressed sets of apertures operative to enlarge a bubble laterally. For this purpose increasingly greater numbers of apertures are arranged laterally with respect to the axis of bubble movement through successive stages of the expander-detector arrangement. The actual detector is formed at the stage including the maximum number of apertures.

Abstract: A magnetic bubble circuit and process for the manufacture of same is disclosed in which a pattern of permalloy elements is overlaid on a substantially planar surface contiguous with the top surface of an underlying pattern of conducting elements. This structure is fabricated by including a metal or metal alloy film on the substrate and selectively anodizing the film to produce conducting and nonconducting regions having coplanar surfaces.

Abstract: A high speed magnetic bubble memory is realized with two like-apertured metallic layers each adapted for substantially uniform overall current flow. The apertures locally modify the current flow to provide localized field gradients for moving bubbles in an adjacent bubble layer. The patterns of apertures in the two layers are offset with respect to one another and the layers are pulsed in sequence in a manner to move bubbles along propagation paths defined by the patterns of apertures.

Abstract: A conductor-access magnetic bubble memory is realized with a single electrically-conductive film for the propagation of bubbles. The film is characterized by sequences of apertures in the film. The sequences define paths for bubble movement in response to controlled current pulses. Ion-implanted regions offset with respect to the aperture edges ensure unidirectional bubble movement along the paths.

Abstract: A conductor-access, magnetic bubble memory is realized with a single metallization level for propagation. The familiar undulating or serpentine conductor pattern used for moving bubbles is modified to allow a simple and easily realizable, low power drive arrangement where currents flow parallel to the bubble paths.

Abstract: A low power, conductor-access, bubble memory is realized with a single level of metallization for providing the requisite propagation fields. Sets of apertures in the conducting layer define bubble paths, and permalloy elements aligned with the apertures overlie the conducting layer at end portions and contact the exposed bubble layer at midportions. Current flow is established transverse to the bubble paths.

Abstract: A magnetic bubble memory with a single electrically-conducting layer for defining a bubble propagate arrangement is adapted to provide a compatible bubble expander detector by a sequence of increasingly larger apertures in the conducting layer.

Abstract: Defining the structuring of bubble domains in the magnetizable layer of a bubble domain memory plane is determined by modification of the magnetic characteristics of the magnetizable layer in the confinement area. The memory plane is comprised of a non-magnetic Gadolinium Gallium Garnet (GGG) layer which is a supporting substrate upon which is formed by the liquid phase epitaxy (LPE) method a magnetizable layer in which bubble domains are capable of being generated, sustained and moved about. Formed upon the bubble domain supporting magnetizable layer is a matrix array of conductive drive lines, the intersections of which define respective memory areas. In each memory area the position of the bubble domain in the magnetizable layer is determined by modifying the magnetic characteristics of the magnetizable layer in a confinement area as by an ion milling process. The ion milled confinement area along the line of the thickness gradient generates a perpendicular field H.sub.

Abstract: A magnetic bubble element which is useful as an image information processing element. A thin film made of a magnetic bubble forming material has a plurality of wedge-formed patterns made of a non-magnetostriction soft magnetic thin film is formed on the upper surface of the thin film 16. A conductor grating comprising two undulating conductor patterns are provided each cycle of the undulation in both conductor patterns defining a wider pitch and a narrower pitch, each of the wedge-formed patterns being disposed over the corresponding part of one of the two conductor patterns defining the narrower pitch in a manner such that the apex portion and the bottom portion of each wedge shaped pattern extend into the parts forming the wider pitch.

Abstract: There is provided a memory system, for example, a magnetic bubble domain memory, which includes an exchange stack buffer memory between a main storage area and other portions of a bubble domain chip organization. The buffer memory includes a plurality of magnetic areas, such as discs, arranged in an ordered array between the main storage area and the remainder of the chip organization. Control conductors are arranged to interconnect each row of magnetic areas with an adjacent row of similar areas, or with portions of the main storage area, or with the remainder of the chip organization circuit. Means are provided to supply signals to the control conductors to selectively transfer information from a row of magnetic areas to one of the adjacent areas.

Abstract: Two parallel conductors are positioned on top of a magnetic layer where bubble domains are to be coded. The two parallel conductors are positioned to form a gap therebetween of a particular size. An external in-plane magnetic field is applied to the magnetic layer. The size of the gap is selected such that when current is simultaneously applied in both conductors, a local in-plane field will be formed in the gap which is sufficient for coding bubble wall states and a vertical field will be formed in the gap sufficient to retain a bubble in the gap during the application of current to the conductors. The application of current in the one direction in the conductors codes a bubble with one pair (S = 0) of Bloch lines and the application of current in the opposite direction codes a bubble with no Bloch lines (S = 1).

Abstract: Disclosed are magnetic domain (bubble) memory arrays and correlator type memory arrays in uniaxially anisotropic crystals which utilize wavering loop conductor patterns at each bit location defining three contiguous magnetic domain retaining regions. On current reversal a bubble in the center loop of a wavering loop pattern will be equally attracted to either of the outside loops. Decision control is provided by a second array of two conductor lines interposed between the respective domain retaining regions. These control conductors establish an aiding or inhibiting magnetic field when current flows through them. In an alternate design a correlator function is obtained by using bubbles retained in previously disclosed bistable loops as memory elements and interrogating them by means of auxiliary bubbles driven by adjacent wavering loops.

Abstract: A device adapted for biasing bubble domains in a low externally applied magnetic bias field. This device is suitable for use when isolated bubbles or a column of bubbles are translated to or from a bubble lattice. The device has a pair of parallel channels, each containing a stripe domain therein. Positioned between the pair of channels is a channel for the translation of isolated bubbles. Positioned in juxtaposition with the bubble containing channel and the pair of stripe containing channels are a pair of parallel conductors. The passage of current through one conductor in one direction and a current through the other conductor in the opposite direction together with the presence of the stripe domains in the two channels provide a biasing field around the channel containing the bubbles which permits the isolated bubble operating margin to overlap the lattice operating margin.

Abstract: There is described an improved switching device for use in magnetic bubble domain systems. In this device, chevron propagation paths are utilized. A pair of substantially parallel conductors are interconnected at appropriate locations via the chevrons in the respective propagation paths. The pair of conductors permits reduced amplitude requirements in the control current signal. In addition, a return path for the current signal is provided to simplify interconnection in major/minor loop chip configurations. The chevrons are arranged such that the apex of one chevron group is contained between the pair of conductor lines. The ends of adjacent chevron groups in another propagation path are disposed between the pair of conductor lines. Consequently, the magnetic bubble domain "sits" on the chevron ends longer whereby wider phase margins during a transfer operation are achieved. Annihilation of magnetic bubble domains can be achieved by reversing the current direction.

Abstract: A multi-state memory cell which uses magnetic bubble domains in uniaxial material is described. The cell includes a channel in which a number of stable bubble positions separated by barriers is formed and on which select conductors are positioned to switch a bubble from one stable position to another on a threshold basis by means of coincident currents. A cell in accordance with this invention may take the form of a four-state-two conductor cell, two-bistable-state two-conductor cell, multi-state six conductor cell and six-state three-conductor cell and include destructive or non-destructive readout.

Abstract: Field access system for use in propagation of bubbles is disclosed. The field access system combines discrete drive elements with a continuous drive film. An example is a Permalloy overlay consisting of a continuous drive film with protruding T & I bars which function as drive elements. This overlay structure is spaced over a suitable bubble material. The drive film is in direct contact with the T & I drive elements so that exchange coupling exists between the drive film and the drive elements. Use of a continuous drive film allows for control of the drive elements by a closed flux magnetic circuit having low power consumption.