Abstract: An optical system having a plurality of ring resonators that can be tuned by regulating their local temperatures in a manner that enables: initial spectral alignment of the optical resonances with the desired carrier wavelengths; fine-tuning of the ring resonators to spectrally align a selected feature of the optical resonances with the carrier wavelengths; and continuous tuning of the ring resonators to counter any detuning thereof during operation. The initial spectral alignment can be performed using intensity/frequency modulation of different carrier wavelengths with different respective frequencies and detection of said frequencies in the photocurrents generated by the individual ring resonators under reverse-bias conditions.

Abstract: A state-changeable device includes a first and a second particle arranged in proximity to each other; and a coupling material between the first and the second particle; wherein the first and the second particle are adapted to provide a charge carrier distribution such that surface plasmon polaritons (SPP) occur; and the coupling material is adapted to exhibit a variable conductivity in response to a trigger signal thereby changing an electro-optical coupling between the first and the second particle.

Abstract: A memory device may include an access transistor, and a memory cell configured to store an item of information. The memory cell may include first and second electrodes configured to have different optoelectronic states corresponding respectively to two values of the item of information, and to switch between the different optoelectronic states based upon a control signal external to the memory cell, the different optoelectronic states being naturally stable in an absence of the control signal. The memory cell may also include a solid electrolyte between the first and second electrodes.

Abstract: A solid-state, multi-valued, molecular random access memory (RAM) device, comprising an electrically, optically and/or magnetically addressable unit, a memory reader, and a memory writer. The addressable unit comprises a conductive substrate; one or more layers of electrochromic, magnetic, redox-active, and/or photochromic materials deposited on the conductive substrate; and a conductive top layer deposited on top the one or more layers. The memory writer applies a plurality of predetermined values of potential biases or optical signals or magnetic fields to the unit, wherein each predetermined value applied results in a uniquely distinguishable optical, magnetic and/or electrical state of the unit, thus corresponding to a unique logical value. The memory reader reads the optical, magnetic and/or electrical state of the unit.

Abstract: An objective lens for an optical pickup device is characterized in that compatibility of three types of optical discs, which are a BD, a DVD, and a CD, may be realized by a common objective lens, and a flare can be created by providing an over-spherical aberration when a third optical disc is used from a size relationship between a pitch on a central region side and a pitch on an intermediate region side across a boundary and a relationship of a direction of a step in the base structures superimposed in a central region and an intermediate region of the objective lens.

Abstract: An optical data store is specified, having a data storage layer with a non-toxic and biodegradable polymer as light-sensitive storage medium which has photo-inducible anisotropy, for the induction of which a threshold value of the optical intensity has to be exceeded. The light-sensitive material is preferably bacteriorhodopsin which, by way of example, is immobilized in a manner embedded in a suitable matrix material or, if appropriate, in a crosslinked manner. The storage medium permits a high storage density and can be applied in a simple manner, for instance by printing onto a substrate.

Abstract: An integrated circuit device (20, 60) includes a plurality of memory cells (22), which are configured to store data. Multiple P-N junctions (24) are arranged so that a single, respective P-N junction is disposed in proximity to each memory cell and is configured to emit optical radiation during readout from the memory cell with a wavelength matching an emission wavelength of the memory cell.

Abstract: An optical memory device and a method of recording/reproducing information by using the optical memory device. The optical memory device includes a substrate; a first barrier layer formed on the substrate; a quantum well layer; a second barrier layer; a quantum dot layer; and a third barrier layer. The quantum well layer has an energy band gap which is wider than that of the quantum dot layer, and the second barrier layer has an energy band gap which is wider than that of the quantum well layer, so that electrons in excitons which are generated in the quantum dot layer by light of a certain wavelength are captured by the quantum well layer to record information, and then, recorded information may be erased or reproduced by irradiating light of a certain wavelength to the optical memory device.

Abstract: The present invention provides a solid material comprising an immobilized mixture of two or more proteorhodopsins, two or more bacteriorhodopsins, or one or more bacteriorhodopsin and one or more proteorhodopsins. The proteorhodopsins are selected from the group consisting of all-trans-retinal-containing proteorhodopsins and retinal analog-containing proteorhodopsins; all of which have absorption spectra that do not overlap. The bacteriorhodopsins are selected from the group consisting of all-trans-retinal-containing bacteriorhodopsins and retinal analog-containing bacteriorhodopsins; all of which have absorption spectra that do not overlap. The present invention also provides an optical information carrier, such as an optical data storage material and a fraud-proof optical data carrier, comprising the above-described solid material and a substrate selected from the group consisting of glass, paper, metal, fabric material, and plastic material, wherein said solid material is deposited on said substrate.

Abstract: An optically controlled read only memory is disclosed. The optically controlled read only memory includes a substrate, a plurality of memory cells having optical sensors disposed on the substrate, and at least one shielding structure disposed on the optical sensor, in which the shielding structure selectively shields a portion of the optical sensor according to a predetermined layout. Preferably, the optically controlled read only memory of the present invention is capable of providing two types or more program codes and outputting different program codes carrying different function under different lighting condition.

Abstract: An optically-controlled memory resistor includes (1) a memory resistor having a first electrode, a second electrode, and a photo-responsive active layer disposed between the first and second electrodes and (2) a light source in cooperation with the memory resistor. The light source is configured to controllably illuminate the memory resistor for affecting a resistance state exhibited by the memory resistor. Also, a method for operating a memory resistor includes changing a resistance state of the memory resistor in response to an application of photons to the memory resistor.

Abstract: Optical memory comprising: a semiconductor wire, a first electrode, a second electrode, a light source, a means for producing a first voltage at the first electrode, a means for producing a second voltage at the second electrode, and a means for determining the presence of an electrical voltage across the first electrode and the second electrode exceeding a predefined voltage. The first voltage, preferably less than 0 volts, different from said second voltage. The semiconductor wire is optically transparent and has a bandgap less than the energy produced by the light source. The light source is optically connected to the semiconductor wire. The first electrode and the second electrode are electrically insulated from each other and said semiconductor wire.

Abstract: Loadless 4 transistor SRAM cell operation can be substantially improved, yielding area saving and more stable operation by use of optical-light load. Parasitic photocurrents in PMOS anodes-substrate junctions act as load currents. Light can be introduced by either ambient light through transparent window on top of the chip or by cheap LED diode attached to chip surface.

Abstract: A semiconductor memory system includes a controller and a memory device that are optical-interconnected. The controller includes a control logic configured to generate a control signal for controlling the memory device and a transmitter configured to convert the control signal into an optical signal, and output the optical signal. The memory device includes a receiving unit filter configured to convert the optical signal into an electric signal, and the electric signal based on a supply voltage corresponding to a period of the optical signal or the electric signal.

Abstract: An electronic device comprising a heat transfer structure and a phase change structure which is convertible between two phase states by heating, wherein the phase change structure is electrically conductive in at least one of the two phase states, wherein the heat transfer structure is arranged to be heated by radiation impinging on the heat transfer structure, wherein the phase change structure is thermally coupled to the heat transfer structure so that the phase change structure is convertible between the two phase states when the radiation impinges on the heat transfer structure.

Abstract: A nonvolatile memory device and method using phase changes in a substrate to alter optical properties of the substrate for the purpose of data storage. The memory device includes a substrate containing a phase change material having phases comprising amorphous and crystalline phases. The phase change material has optical properties that change depending on whether the phase change material is in the amorphous phase or the crystalline phase. The memory device is further equipped with one or more devices that generate light and transmit the light into the substrate, and one or more devices that cause the phase change material to change between the amorphous and crystalline phases thereof. At least one optical sensing device detects light that passes into the phase change material to the optical sensing device and generates electrical signals based thereon, which are converted into bit values if they exceed a threshold.

Abstract: An optical memory device and a method of recording/reproducing information by using the optical memory device. The optical memory device includes a substrate; a first barrier layer formed on the substrate; a quantum well layer; a second barrier layer; a quantum dot layer; and a third barrier layer. The quantum well layer has an energy band gap which is wider than that of the quantum dot layer, and the second barrier layer has an energy band gap which is wider than that of the quantum well layer, so that electrons in excitons which are generated in the quantum dot layer by light of a certain wavelength are captured by the quantum well layer to record information, and then, recorded information may be erased or reproduced by irradiating light of a certain wavelength to the optical memory device.

Abstract: A disk drive is disclosed wherein boot data is transmitted from a first plurality of data sectors to a host during a first boot operation, and a log is maintained identifying a plurality of the transmitted data sectors. The log is used to write the boot data to a boot disk space comprising a second plurality of data sectors. During a second boot operation, the boot data is pre-fetched from the second plurality of data sectors of the boot disk space and stored in a cache.

Abstract: A hologram disc reading and writing apparatus including a signal light source module, a beam splitter, a reference/reading light source, a reflector, and an optical reading head and a hologram disc reading apparatus are provided. A signal light beam emitted from the signal light source module is transmitted to a data region of a hologram disc through the beam splitter. The reference/reading light source, the signal light source module, and the optical reading head are disposed at the same side of the hologram disc. The reflector is disposed at the other side. A spherical wave light beam emitted from the reference/reading light source is transmitted through the data region and reflected by the reflector to form a phase conjugate light beam transmitted to and through the data region. The phase conjugate light beam is transformed to a data light beam transmitted to the optical reading head through the beam splitter.

Abstract: [PROBLEMS] To provide a reconfiguration controller of an optically reconfigurable gate array for correctly and reliably writing various types of logical operation circuits of an optically reconfigurable gate array and performing high-speed logical operation by quickly starting up the circuits.

Abstract: A memory device of the present invention is characterized by a memory device for storing information by making use of molecular alignment of a liquid crystal compound in a liquid crystalline state formed by spot irradiation with a laser beam to carry out a selective heat treatment on an electroconductive liquid crystal semiconductor material layer containing a liquid crystal compound, comprising: a first electrode group including a plurality of linear electrodes which are parallel to each other; an electroconductive liquid crystal semiconductor material layer formed in such a manner that the layer covers the first electrode group, the layer containing a liquid crystal compound having a long linear conjugate structural moiety and exhibiting a smectic phase as a liquid crystal phase; and a second electrode group formed on the electroconductive liquid crystal semiconductor material layer and including a plurality of linear transparent electrodes being parallel to each other and extend in a direction intersecting

Abstract: The invention provides a semiconductor device where data can be written after the production and forgery caused by rewriting of data can be prevented, and which can be manufactured at a low cost using a simple structure and an inexpensive material. Further, the invention provides a semiconductor device having the aforementioned functions, where wireless communication is not blocked by the internal structure. The semiconductor device of the invention has an organic memory provided with a memory cell array including a plurality of memory cells, a control circuit for controlling the organic memory, and a wire for connecting an antenna. Each of the plurality of memory cells has a transistor and a memory element. The memory element has a structure where an organic compound layer is provided between a first conductive layer and a second conductive layer. The second conductive layer is formed in a linear shape.

Abstract: The present invention provides a quantum optical data storage protocol, whose storage time is lengthened by spin population decay time from several minutes to several hours.

Abstract: A very small magnetic tunnel junction is formed on a semiconductor p-i-n diode. Spin-polarized current which is generated by circular polarized light or elliptically-polarized light, is injected into a free layer of the magnetic tunnel junction so that magnetization direction (two opposite directions) in the free layer is changed based on the information, whereby information is stored in the memory element.

Abstract: A semiconductor memory system includes a controller and a memory device that are optical-interconnected. The controller includes a control logic configured to generate a control signal for controlling the memory device and a transmitter configured to convert the control signal into an optical signal, and output the optical signal. The memory device includes a receiving unit filter configured to convert the optical signal into an electric signal, and the electric signal based on a supply voltage corresponding to a period of the optical signal or the electric signal.

Abstract: A nonvolatile optical memory element in which a ferromagnetic body is provided on a semiconductor causes such a problem that in a case where magnetization of the ferromagnetic body is read by light, magneto-optical response becomes very small when the ferromagnetic body is small in volume. The present invention provides a memory element, a memory device, and a data reading method, each of which is applicable to data reading from a nonvolatile optical memory element. In a nonvolatile optical memory element having a structure in which a ferromagnetic body is provided on a semiconductor that is connected to an optical waveguide, electrons are injected into the semiconductor via the ferromagnetic body so that the electrons that are spin-polarized according to a magnetization direction of the ferromagnetic body are injected into the semiconductor, thereby enlarging a region in which a photomagnetic effect occurs effectively.

Abstract: A scalable nano-electro-mechanical memory cell design that requires only conventional semiconductor fabrication materials and surface micromachining technology, and is suited for use in cross-point memory arrays for very high density non-volatile storage. This design also leverages well established surface-micromachining technology and electro-mechanical device phenomena to achieve an elegantly simple and scalable memory cell structure that can potentially operate with low voltage. An elongate beam is held between a non-deflected state and a deflected state, or between two deflected states, therein defining two binary memory states. Stiction, buried charge layers, or a combination of stiction and buried charge layers can be incorporated to modify the stability of one or both deflected states for the cell. Current through the moveable portion of the elongate beam within the memory cell can be registered utilizing one or more access transistors for reading the data state.

Abstract: A nano device includes an array of cells disposed in rows and columns and constructed over a substrate, and an optical circuit disposed over the substrate, wherein the optical circuit is formed by nano elements in a self-assembled process.

Abstract: An optical buffer device includes plural optical memory elements that are capable of holding light and an optical delay element. The plural optical memory elements are arranged on an optical path through which signal light and control light propagate in mutually opposite directions. Further, the optical delay element is disposed between the optical memory elements that are adjacent to each other. The optical delay element imparts different delays to the signal light and the control light. According to a preferred exemplary embodiment of this optical buffer device, each of the optical memory elements includes an optical waveguide through which the signal light and the control light propagate and an optical resonator that is disposed in proximity to this optical waveguide, and a coupling between the optical waveguide and the optical resonator is generated or cancelled depending on whether or not the control light is inputted.

Abstract: Loadless 4 transistor SRAM cell operation can be substantially improved yielding area saving and more stable operation by use of optical-light load. Parasitic photocurrents in PMOS anodes-substrate junctions act as load currents. Light can be introduced by either ambient light through transparent window on top of the chip or by cheap LED diode attached to chip surface.

Abstract: The present invention provides a quantum optical data storage protocol, whose storage time is lengthened by spin population decay time from several minutes to several hours.

Abstract: A memory device includes a bit cell including an adjustable transmittance component having a first side and a second side. The adjustable transmittance component has an adjustable transmittance state representative of a bit value of the bit cell. The memory device further includes a photon detector optically coupled to a second side of the adjustable transmittance component. A technique related to the memory device includes determining a transmittance state of the adjustable transmittance component and providing a bit value for the bit cell based on the transmittance state. Another technique related to the memory device includes determining a bit value to be stored at the bit cell and configuring the adjustable transmittance component to have a transmittance state corresponding to the bit value.

Abstract: In some embodiments, a method, apparatus and system for global shared memory using serial optical memory are presented. In this regard, a memory device is introduced to circulate a signal among a plurality of optical emitters and receivers. Other embodiments are also disclosed and claimed.

Abstract: In some embodiments, a method, apparatus and system for n-dimensional sparse memory using serial optical memory are presented. In this regard, a memory device is introduced to circulate a signal among a plurality of optical emitters and receivers. Other embodiments are also disclosed and claimed.

Abstract: A phase change memory may be configured to enable both optical and electrical accessing of the memory. In one embodiment, each cell may be electrically accessed by a laser beam, and at the same time each cell may be electrically accessed by electrical addressing signals.

Abstract: A controller converts a parallel command signal and address signal, or a parallel write data signal into a first serial signal, and outputs the converted signal as a first optical signal with a single wavelength to a memory device via an optical transmission line. The memory device converts the first optical signal into the original parallel command signal, address signal, and write data signal, and outputs the converted parallel signals to a memory unit. The memory device converts a parallel read data signal from the memory unit into a second serial signal, and outputs the converted signal to the controller via the optical transmission line as a second optical signal with a single wavelength. It is unnecessary to transmit the optical signal using an optical multiplexer, an optical demultiplexer, etc., thereby improving transmission rate of signals transmitted between the controller and the memory device at minimum cost.

Abstract: A very small magnetic tunnel junction is formed on a semiconductor p-i-n diode. Spin-polarized current which is generated by circular polarized light or elliptically-polarized light, is injected into a free layer of the magnetic tunnel junction so that magnetization direction (two opposite directions) in the free layer is changed based on the information, whereby information is stored in the memory element.

Abstract: A memory device of the present invention is characterized by a memory device for storing information by making use of molecular alignment of a liquid crystal compound in a liquid crystalline state formed by spot irradiation with a laser beam to carry out a selective heat treatment on an electroconductive liquid crystal semiconductor material layer containing a liquid crystal compound, comprising: a first electrode group including a plurality of linear electrodes which are parallel to each other; an electroconductive liquid crystal semiconductor material layer formed in such a manner that the layer covers the first electrode group, the layer containing a liquid crystal compound having a long linear conjugate structural moiety and exhibiting a smectic phase as a liquid crystal phase; and a second electrode group formed on the electroconductive liquid crystal semiconductor material layer and including a plurality of linear transparent electrodes being parallel to each other and extend in a direction intersecting

Abstract: A microcomputer includes a circuit block; a nonvolatile memory configured to store optimization data for optimization of an operation of the microcomputer; and an optimization circuit configured to read out memory optimization data as a part of the optimization data from the nonvolatile memory in synchronization with a first frequency clock signal as an first clock signal to optimize an operation of the nonvolatile memory, and then to read out circuit block optimization data as another part of the optimization data from the nonvolatile memory in synchronization with a second frequency clock signal as the first clock signal to optimize an operation of the circuit block. The frequency of the first frequency clock signal is lower than that of the second frequency clock signal.

Abstract: A method for generating a hologram on a disc surface provides for the use of calibration spots burned onto a disc with an accuracy greater than one half wavelength of light.

Abstract: The invention relates to an information carrier (101) intended to be read and/or written by a periodic array of light spots, said information carrier (101) comprising a data area (105) defined by a set of elementary data areas, a first periodic structure (108) intended to interfere with said periodic array of light spots for generating a first moiré pattern, a second periodic structure (109) intended to interfere with said periodic array of light spots for generating a second moiré pattern, said second periodic structure (109) being arranged perpendicularly to said first periodic structure (108). The invention also relates to an apparatus for reading and/or writing said information carrier (101).

Abstract: The invention relates to an information carrier, and a system for positioning such an information carrier in an apparatus. This system comprises an optical element (102) for generating a periodic array of light spots (103) intended to be applied to an information carrier (101), said information carrier (101) comprising a first periodic structure (108) intended to interfere with said periodic array of light spots (103) for generating a first Moiré pattern, and a second periodic structure (109) intended to interfere with said periodic array of light spots (103) for generating a second Moiré pattern, analysis means for deriving from said first and second Moiré patterns, the angle value (S) between said periodic array of light spots (103) and said information carrier (101), and actuation means (AC1-AC2-AC3) for adjusting the angular position of said information carrier (101) with respect to said array of light spots (103), from control signals (114) derived based on said angle value (S).

Abstract: A memory device includes a semiconductor substrate in which memory circuitry has been fabricated. An address converter and a control signal converter are coupled to an address decoder and control logic, respectively. The address and control converters are operable to receive and convert optical address and control signals, respectively, into corresponding electrical address signals applied to the address decoder and control signals applied to the control logic. A read/write circuit on the substrate is coupled to a data converter formed in the substrate. The data converter is operable to receive and convert optical write data signals into corresponding electrical data signals to be applied to the read/write circuit and to receive and convert electrical read data signals into corresponding optical read data signals.

Abstract: A memory device includes a semiconductor substrate in which memory circuitry has been fabricated. An address converter and a control signal converter are coupled to an address decoder and control logic, respectively. The address and control converters are operable to receive and convert optical address and control signals, respectively, into corresponding electrical address signals applied to the address decoder and control signals applied to the control logic. A read/write circuit on the substrate is coupled to a data converter formed in the substrate. The data converter is operable to receive and convert optical write data signals into corresponding electrical data signals to be applied to the read/write circuit and to receive and convert electrical read data signals into corresponding optical read data signals.

Abstract: Various embodiments of the present invention are related to photonic-interconnect systems for reading data from and writing data to memory cells of memory chips at approximately the same time. In one embodiment of the present invention, A photonic-interconnect system comprises a photonic interconnect coupled to a photonic device. The photonic interconnect is coupled to the memory chip and is configured to encode a first data set stored in the memory cells into a first set of electromagnetic signals at approximately the same time, decode a second data set encoded in a second set of electromagnetic signals at approximately the same time, and store the second data set in the memory cells. The photonic device is configured to transmit the first set of electromagnetic signals out from the photonic interconnect and transmit the second set of electromagnetic signals into the photonic interconnect.

Abstract: The invention relates to a system for reading data stored on an information carrier. The system comprises a waveguide (1203) which allows displacing laterally the different components in exploiting the reflection of the light beams between a first surface (1207) and a second surface (1208) of said wave guide (1203). Use: Optical storage.

Abstract: A memory device includes a semiconductor substrate in which memory circuitry has been fabricated. An address converter and a control signal converter are coupled to an address decoder and control logic, respectively. The address and control converters are operable to receive and convert optical address and control signals, respectively, into corresponding electrical address signals applied to the address decoder and control signals applied to the control logic. A read/write circuit on the substrate is coupled to a data converter formed in the substrate. The data converter is operable to receive and convert optical write data signals into corresponding electrical data signals to be applied to the read/write circuit and to receive and convert electrical read data signals into corresponding optical read data signals.

Abstract: In an embodiment, a phase change non-volatile memory includes a number of memory cells. The memory cells include a phase change material which may transition between two memory states. The phase change material has different electrical properties in different states. The memory cells may be electrically addressable and include a transistor in each cell to electrically read and write data to the cell. An energy beam may be used to pre-program the device by heating selected memory cells, and consequently changing the state of the phase change material.

Abstract: An array of non-volatile memory cells and a method for altering a state of a non-volatile memory cell that comprises multiple terminals, a substrate, and a charge retainer surrounded by an insulator, the method includes: illuminating the substrate with light such as to create electron-hole pairs within a first portion of the substrate positioned deep within the substrate and to create electron-hole pairs within a second portion of the substrate located near an upper surface of the substrate; and applying at least one control voltage to at least one terminal of the non-volatile memory cell such as to cause charged particles created in the first portion and in the second portion to propagate towards the upper surface of the substrate and to be injected into the charge retainer.

Abstract: Excitation of a triad artificial photosynthetic reaction center consisting of a porphyrin (P) convalently linked to a fullerene electron acceptor (C60) and a carotenoid secondary donor (C) leads to the formation of a long-lived C+-P-C60? charge-separated state via photoinduced electron transfer. This reaction occurs in a frozen organic glass down to at least 8 K. At 77 K, charge recombination of C*+-P-C60? occurs on the ?s time scale, and yields solely the carotenoid triplet state. In the presence of a small (20 mT) static magnetic field, the lifetime of the charge-separated state is increased by 50%. This is ascribed to the effect of the magnetic field on interconversion of the singlet and triplet biradicals. At zero field, the initially formed singlet biradical state is in equilibrium with the three triplet biradical sublevels, and all four states have comparable populations. Decay to the carotenoid triplet only occurs from the three triplet sublevels.