Abstract: Disclosed are a method and an apparatus for detecting spike event or transmitting spike event information generated in a neuromorphic chip. The apparatus for detecting spike event generated in a neuromorphic chip may detect spike event information for a plurality of neurons included in the neuromorphic chip based on a neuron group.

Abstract: Provided are transistor devices such as logic gates that are capable of associating a computational state and or performing logic operations with detectable electronic spin state and or magnetic state. Methods of operating transistor devices employing magnetic states are provided. Devices comprise input and output structures and magnetic films capable of being converted between magnetic states.

Abstract: During a stand-by state in which power supply is cut off, a high-voltage power supply control circuit isolates a global negative voltage line transmitting a negative voltage and a local negative voltage line provided corresponding to each respective sub array block from each other and isolates a global ground line and a local ground line transmitting a ground voltage from each other. These local ground line and local negative voltage line are charged to a high voltage level through a high voltage line before cut-off from the corresponding power supply. A leakage current path from a word line to the negative voltage line or the ground line is cut off, so that the word line in a non-selected state can reliably be maintained at a non-selection voltage. Thus, in a low power consumption stand-by mode, data stored in a memory cell can be held in a stable manner.

Abstract: A program voltage is applied to the drain electrode of a floating gate transistor to program the floating gate transistor. Concurrent with the application of the program voltage, a current based on the voltage at the source electrode of the floating gate transistor is compared with a threshold current to verify the programming of the floating gate transistor. When the bit cell current falls below the threshold current, the floating gate transistor is considered to be sufficiently programmed and the next floating gate transistor to be programmed is selected. Further, the program voltage supply emulates the selection circuitry used to select between the bit cells so as to model the voltage drop caused by the selection circuitry between the program voltage supply and the drain electrode of the floating gate transistor being programmed. The program voltage supply adjusts the output program voltage based on the modeled voltage drop.

Abstract: There is provided a non-volatile semiconductor device having a memory cell in which a threshold value voltage changes in accordance with the application of the writing pulse having a predetermined width and voltage with respect to word lines and bit lines and data depending upon the threshold value voltage is written, wherein writing failure is generated in the first time data writing operation, and a writing condition is set for suppressing the writing condition is set which is capable of suppressing the writing failure rate than the case of the first time writing operation when the writing operation is re-executed.

Abstract: Transfer between paths in ion-implanted magnetic bubble memories has been achieved without the use of transfer conductors. The transfer mechanism takes advantage of the three-fold anisotropy of the implanted drive layer which makes it possible for bubbles to pass freely through gaps in one direction while being obstructed from passing through in the other direction. Transfer is controlled by a brief reversal of the direction of rotation of the in-plane field. In one embodiment, a bidirectional transfer gate is employed. Configurations using unidirectional gates and hybrid gates using conductor and reverse-rotation controlled transfer are also shown.

Abstract: A two-dimensional storage system having two dimensional access is described which offers advantages of speed and effective utilization of available storage area. The system is comprised of a plurality of bubble domain storage arrays, each of which has means therein for moving bubble domains in two dimensions. For instance, in each storage array bubbles can be moved either right-left or up-down. A functional area is provided between adjacent storage arrays to accommodate bubble movement to perform read, write, and clear functions and possibly logic functions. In one embodiment, the functional areas are comprised of sensors which simultaneously function as translation elements to map the information in one storage array into an adjacent array. Magnetic bubble domain sensors are provided for detecting bubble domains moved in one or two dimensions. For example, one sensor can be used to detect bubble domains moving right-left while another sensor is used to detect bubble domains moving up-down.

Abstract: These improved current controlled transfer switches are particularly useful for changing the propagation path of very small bubble domains without requiring large amounts of transfer current. The underlying principle is that the transfer operation occurs when the magnitude of the magnetic drive field used to move bubble domains has diminished to a small value, or is zero. This means that the magnetic field due to current in the switch does not have to overcome the effect of the drive field and therefore can be very small while still being effective. This is termed a "start/stop" operation and in one embodiment, current-assisted transfer is achieved by utilizing a change in the sequence of the magnetic drive field (generally an in-plane rotating field) at the time of transfer. In another embodiment, a continuous "three-quadrant" magnetic drive field is used instead of the customary 360.degree. rotating drive field.