Abstract: A measurement system includes a broadband light source that outputs a broadband light, an optical splitter that divides the broadband light into a plurality of divided light beams and a plurality of optical sensors, each optical sensor configured to receive a single one of the divided light beams and measure an electrical parameter of a conductor.

Abstract: Systems and methods are provided for digital transport of paramagnetic particles. The systems and methods may include providing a magnetic garnet film having a plurality of magnetic domain walls, disposing a liquid solution on a surface of the magnetic garnet film, wherein the liquid solution includes a plurality of paramagnetic particles, and applying an external field to transport at least a portion of the paramagnetic particles from a first magnetic domain wall to a second magnetic domain wall of the plurality of magnetic domain walls.

Abstract: There is provided a slant short-period grating which is obtainable by irradiating light onto an optical fiber whose core is formed from quartz glass to which has been doped a photosensitive dopant that changes a refractive index of the quartz glass by light irradiation, and whose clad has one or two or more layers with at least the layer that is adjacent to the core being a photosensitive layer formed from quartz glass to which has been doped a photosensitive dopant that changes a refractive index of the quartz glass by light irradiation. In this slant short-period grating a grating portion is formed by changing the refractive index of the photosensitive layer of the clad and the core at a predetermined grating period along a longitudinal direction of the optical fiber by a predetermined slant angle.

Abstract: A method and a system for generating grating images with an improved speed is disclosed. The system utilizes a coherent light source for providing a coherent beam L, an exposure control device for controlling the exposure of the coherent beam L, a beam guiding device for controlling the pitch and the orientation of each grating, a symmetrical beam generating device for splitting the coherent beam L into two symmetrical coherent beams, a local scan device for allowing the two coherent beams to intersect and form a standing wave, at different position in a small local scan area in order to combine different gratings in the local scan area, a photosensitive material for recording the standing wave, and a supporting device for supporting and moving the photosensitive material so as to combine different local scan area, and obtain a large scale grating image.

Abstract: Disclosed is an improved magnetic bubble recording device for optically effecting writing, reading and erasure of information with respect to magnetic bubbles. The magnetic bubble recording device has a basic structure in which a first magnetic film for forming a magnetic bubble therein and a second magnetic film for imparting a bias magnetic field to the first magnetic film to stably hold the maganetic bubble in the first magnetic film are provided on a substrate on which is formed a transfer pattern for transferring a magnetic bubble along the transfer pattern, thereby providing a portable magnetic bubble recording device at low cost and with a simple structure. In addition, an alignment pattern for aligning the device with a light beam applied to the device is formed on the device, thereby permitting accurate writing and reading. The peripheral edge portion of the pattern of a transfer channel has a surface inclined with respect to the substrate surface so as to transfer the magnetic bubble favorably.

Abstract: A method of transferring Bloch lines present in a domain wall of a magnetic domain formed in a thin magnetic firm, includes cyclically forming asymmetrical potential wells along the domain wall in order to locate the Bloch lines at predetermined positions of the domain wall, and applying a pulsed magnetic film to shift the Bloch lines from a predetermined potential well to another potential well. In a magnetic memory for recording information using Bloch lines as an information carrier, a memory substrate has a stripe magnetic domain defined by a domain wall along which asymmetrical potential wells are cyclically formed to stabilize the Bloch lines along the domain wall. The Bloch lines are written in the domain wall in accordance with input information, the Bloch lines so formed are read out, and the read-out Bloch lines are converted into an electrical signal.

Abstract: A Bloch line memory device comprises stripe magnetic domains in a magnetic film for holding magnetic bubble domains. A pair of Bloch lines is stored as an information carrier in a magnetic wall constructing the stripe magnetic domain. A longitudinal direction of the stripe magnetic domain is made parallel to either the crystalographic directions [112] and [112], [121] and [121], or [211] and [211] of the magnetic film so that the pair of Bloch lines can be smoothly moved in the magnetic wall of the stripe magnetic domain.

Abstract: A duplicator in a magnetic bubble memory with non-implanted patterns, a process for realizing the duplicator and a serial - parallel magnetic bubble memory having at least one of the aforementioned duplicators are disclosed. In a magnetic bubble memory having a first group of aligned non-implanted patterns and a second group of aligned non-implanted patterns, the duplicator according to the invention is characterized in that it comprises an extension conductor and a breaking conductor, the extension conductor linking the first and second groups of patterns, the breaking conductor being positioned transversely with respect to the extension conductor, the geometry of the end pattern of the first group of patterns being such that the duplication position is a stable position and the geometry of the patterns of the second group adjacent the axis of the first group being such that the reception position of the duplicated bubble is a stable position.

Abstract: In a Bloch-line memory wherein a magnetic film comprises a first and a second major line and a minor loop portion defined between the first and second major lines, successive presence and absence of magnetic bubbles being transferred along the first major line in response to a plurality of information signals, the information signals being memorized as vertical Bloch line pairs in domain walls of stripe-domains generated in the minor loop portion, the memorized vertical Bloch line pairs being propagated towards the second major line and being read out as bubbles into the second major line, the magnetic film is formed with a plurality of endless long grooves at desired locations in the minor loop portion and an endless stripe-domain is generated and stabilized in each endless long groove, so that the propagation of vertical Bloch line pairs can be performed step by step.

Abstract: A method of manufacturing and using a magneto-optic device is provided in which a non-magnetic substrate material is utilized to support a laminate formed of at least two layers of magnetic material having certain magnetic and optical properties optimized in one layer and certain switching properties optimized in another layer. The laminate layers are exchange-coupled at their interface to permit the propagation of a magnetic domain wall through the interface from the switching optimized layer to the optically optimized layer so that the direction of magnetization and Faraday rotation of the entire multilayer magnetic material laminate can be reversed through application of an applied external magnetic field having a relatively small threshold value. A modified region of decreased anisotropy material is provided within the switching optimized layer to reduce the switching threshold field for the magneto-optic device to a fraction of the low threshold of the magnetic material of the switching optimized layer.

Abstract: Bubble-to-bubble interaction in a magnetic bubble domain memory is reduced by a notch provided in the outer edge of the replicator of the bubble memory device. The notch serves to slow down the movement of the bubble around the replicator or U-turn element so that it does not elongate under a critical phase of the in-plane field.

Abstract: A magnetic domain device has at least one post element formed from a material that exhibits magnetic domain characteristics and that is positioned on a nonmagnetic substrate material. A pair of electrical drive lines associated with a post element permit coincident current selection of the post element to nucleate a magnetic domain reversal, and an additional current introduced into an adjacent drive line establishes an additive magnetic field to assist the propagation of a domain wall associated with the nucleated magnetic domain reversal so that the direction of magnetization of the post element is reversed.

Abstract: The method of manufacturing predetermined microcircuit conductor patterns, which includes forming on the surface plane of a substrate a layer of insulator material, forming a layer of resist on the layer of insulator material, patterning the layer of resist to define a channel pattern, etching the channel pattern with relatively overwide channels, conditioning the channel bases to receive plating material, and thereafter filling the overwide channels with the plating material to a height at least substantially co-planar with the insulator material to define the predetermined conductor patterns, removing the mask and plated material thereon to uncover completely the conductor pattern.

Abstract: A bubble storage system using contiguous propagation elements is described using magnetically soft drive layers for movement of the bubble domains in a bubble domain film, in response to the reorientation of a magnetic drive field in the plane of the drive layers. In contrast with prior art contiguous element propagation structures, charged walls are not employed for movement of bubble domains. Instead, magnetic poles along the drive layers are used to move the domains. Two drive layers are used, each of which is comprised of a magnetically soft material, such as permalloy. The drive layers are located at different heights with respect to the layer in which the magnetic bubble domains exist, the bottom drive layer being comprised of contiguous propagation elements defining a generally undulating edge along which the magnetic bubble domains move. This layer can be comprised of permalloy contiguous disks, diamonds, etc.

Abstract: The invention is directed to continuous (gapless) propagation structures for use with magnetic bubble domain devices. The gapless structures are arranged so that magnetic bubbles will propagate therealong without a significant change in size or diameter of the bubble. In addition, the structures are configured so that the bubbles will propagate in a preferred direction without ambiguity.

Abstract: A bubble memory chip is manufactured using the following processing steps:a first dielectric insulation layer is deposited on the epitaxial garnet substrate, next,a comparatively thicker layer of a second dielectric insulator is deposited on the surface of the first layer of dielectric insulation, next,the reverse of the desired conductor image is printed on the surface of the second layer of dielectric insulator using a resist material such as a photoresist, next,a straight wall etching process is used to achieve a straight wall etching of the second layer of dielectric insulation but not affecting the first layer of dielectric insulation, next,the selected conductor material is deposited into the exposed groove from the previous etching process and over any remaining resist material such as a photoresist, next,a resist material is applied over the resulting conducting surface from the previous step, next,a course featured pattern is printed over the desired conductor regions leaving exposed the extensive su

Abstract: A magnetic bubble shift register store having a plate of magnetic material whose preferred magnetization direction extends transverse to the plane of the plate and in which bubbles are situated, said plate having two separate, elongated generally parallel extending continuous bubble paths, of lower bubble energy in comparison with the vicinity; the center lines of said paths being situated at a distance from each other which is at least equal to the mean bubble diameter. The 0-bits of written information to be transported and stored are represented by bubbles in the one path, while the 1-bits thereof are represented by bubbles in the other path. The interaction between the bubbles ensures that bubbles in the two paths cannot pass each other, with the result that the information represented by the bubbles can be unambiguously transported and maintained in the path direction.

Abstract: Magnetic bubble functional elements are implemented by aperture patterns in a single layer of electrically-conducting material. The operations of the elements are compatible with single-level conductor driven bubble memories described in A. H. Bobeck patent applications, Ser. Nos. 857,921 now U.S. Pat. No. 4,143,419 issued Mar. 6, 1979 and 856,925, filed Dec. 6, 1977, and in A. H. Bobeck-F. J. Ciak patent application, Ser. No. 899,578, filed Apr. 24, 1978 now abandoned.

Abstract: Plural groups of one or more magnetic domain devices each are mounted in an array on the circuitized surface of a common substrate. A rectangular pattern of slots is provided in the substrate around each group. Each group is encompassed through the slots by the turns of the inner and outer orthogonal solenoids of its own exlusive rotational magnetic field drive system and permanent magnet bias field closed structure. Each device has a pattern of I/O pads located on its undersurface which are bonded to a corresponding pattern of terminal pads which are part of the circuitized surface of the substrate. The interconnecting signal lines to the terminal pads of the substrate pass through one or more of the four intersection corners formed between the slots of the rectangular pattern. Preferably, the substrate also accommodates integrated circuit modules and/or other components mounted thereon which are associated with the drive, sense and other support circuitry for the magnetic domain devices.

Abstract: A current access bubble memory system includes a method and device for propagating and switching isolated bubbles within a plurality of orthogonal propagation channels. The device includes two orthogonal arrays of parallel current conductors oriented at 45.degree. angles to the two orthogonal bubble translation axes. The conductors in each array are regularly spaced a distance S apart from center to center. The first array of conductors are connected in parallel to a first current source and the second array of conductors are connected in parallel to a second current source. The propagation channels are defined by confining means to have a width d where d is the bubble diameter. The centerline of the channels are spaced a distance of about .sqroot.2 S/8 from the center of adjacent conductor intersections. Bubble translation occurs through sequential activation of the two bipolar current sources.

Abstract: A bubble domain storage system is described which has the best features of contiguous element bubble propagation systems and bubble lattice file systems. An array of magnetic bubble domains, such as a lattice, is moved along contiguous propagation patterns in response to the reorientation of a magnetic field in the plane of the bubble domain film. Adjacent rows of bubble domains in the array move in opposite directions to provide individual storage loops within the array. Information accessing can be achieved by the use of input/output registers similar to those used in other contiguous disk bubble domain storage systems. For example, the storage system can be a conventional major/minor loop organization using contiguous element propagation patterns for the storage registers and for the input/output registers.

Abstract: A high speed magnetic bubble memory is realized with two like-apertured metallic layers each adapted for substantially uniform overall current flow. The apertures locally modify the current flow to provide localized field gradients for moving bubbles in an adjacent bubble layer. The patterns of apertures in the two layers are offset with respect to one another and the layers are pulsed in sequence in a manner to move bubbles along propagation paths defined by the patterns of apertures.

Abstract: A method of and an apparatus for improving the selective positioning of single wall domains or bubble domains in a bubble domain memory system is disclosed. The method includes the use of slotted intersecting digit and word drive lines that form memory areas, each memory area being defined by the inside opposing edges of the slotted drive lines at each intersection. Each memory area has four quadrants, three of which are effectively optically blocked by an opaque shield--a bubble domain in the one unblocked quadrant provides the desired Faraday rotation of a plane polarized coherent light beam to generate a beamlet that is optically detected as a binary digital signal. The slotted drive lines are formed below the surface of the bubble domain supporting layer whereby the so-provided magneto static barriers prevent bubble domain sticking in a selected one quadrant of the four quadrants of the memory area and prevent bubble domain escape from the memory area itself.

Abstract: A conductor-access magnetic bubble memory is realized with a single electrically-conductive film for the propagation of bubbles. The film is characterized by sequences of apertures in the film. The sequences define paths for bubble movement in response to controlled current pulses. Ion-implanted regions offset with respect to the aperture edges ensure unidirectional bubble movement along the paths.

Abstract: A conductor-access, magnetic bubble memory is realized with a single metallization level for propagation. The familiar undulating or serpentine conductor pattern used for moving bubbles is modified to allow a simple and easily realizable, low power drive arrangement where currents flow parallel to the bubble paths.

Abstract: A magnetic bubble memory with a single electrically-conducting layer for defining a bubble propagate arrangement is adapted to provide a compatible bubble expander detector by a sequence of increasingly larger apertures in the conducting layer.

Abstract: Defining the structuring of bubble domains in the magnetizable layer of a bubble domain memory plane is determined by modification of the magnetic characteristics of the magnetizable layer in the confinement area. The memory plane is comprised of a non-magnetic Gadolinium Gallium Garnet (GGG) layer which is a supporting substrate upon which is formed by the liquid phase epitaxy (LPE) method a magnetizable layer in which bubble domains are capable of being generated, sustained and moved about. Formed upon the bubble domain supporting magnetizable layer is a matrix array of conductive drive lines, the intersections of which define respective memory areas. In each memory area the position of the bubble domain in the magnetizable layer is determined by modifying the magnetic characteristics of the magnetizable layer in a confinement area as by an ion milling process. The ion milled confinement area along the line of the thickness gradient generates a perpendicular field H.sub.

Abstract: Defining the structuring of bubble domains in a magnetizable layer of a bubble domain memory plane is determined by modifying the magnetic characteristics of the magnetizable layer in the confinement area. The bubble domain memory plane is comprised of a non-magnetic Gadolinium Gallium Garnet (GGG) layer which is a supporting layer upon which is formed by the liquid phase epitaxy (LPE) method a plurality of magnetizable layers in each of which a bubble domain is capable of being generated and sustained. Upon the memory plane are formed, as by any of many well-known deposition techniques, a matrix array of a parallel set of horizontally oriented X drive lines and an orthogonally oriented parallel set of Y drive lines. Each X drive line, Y drive line intersection of the matrix array defines a memory area having four quadrants.

Abstract: An apparatus for and a method of propagating bubble domains is disclosed. The apparatus includes a memory plane that is comprised of a non-magnetic support member upon which are formed a bubble domain layer and at least one stripe domain layer. The stripe domain layer has a set of relatively-narrow, periodic, potential well generating fixed stripe domains provided therein while the bubble domain layer has a set of relatively-wide, parallel, potential well generating fixed guidance channels provided therein that are oriented orthogonal to the parallel set of stripe domains in the stripe domain layer. Bubble domains are concurrently entered, in parallel, at one end of the memory plane in selected ones of the guidance channels. A periodic amplitude modulated bias field of frequency F propagates each of the bubble domains along the associated guidance channel from adjacent to next downstream adjacent stripe domain and thus through the memory plane at the frequency F.

Abstract: The critical velocity at which magnetic bubbles can propagate within a matic material is increased by establishing an easy axis of magnetization within the material. This axis is either growth-induced or strain-induced. In one embodiment, the material has a curvature imparted to it which places it under a uniaxial strain and this induces the magnetic easy axis.