Abstract: A TCAM comprises a plurality of first search lines, a plurality of second search lines, a plurality of memory cell strings and one or more current sensing units. The memory cell strings comprise a plurality of memory cells. The current sensing units are coupled to the memory cell strings. In a search operation, a determination that whether any of the data stored in the memory cell strings matches a data string to be searched is made according to whether the one or more current sensing units detect current from the memory cell strings, or according to the magnitude of the current flowing out from the memory cell strings detected by the one or more current sensing units. Each memory cell includes a first transistor and a second transistor. Gates of the first and second transistors are coupled to a corresponding first search line and a corresponding second search line.

Abstract: A system for facilitating an enhanced k-SAT solver is provided. The system can include a set of analog content addressable memory (aCAM) modules that can represent an expression in a conjunctive normal form (CNF), wherein a respective aCAM module corresponds to a clause of the expression. The system can also include a set of data lines that can provide input candidate values to the set of aCAM modules. A controller of the system can program the set of aCAM modules with respective analog values to represent the expression. The system can also include sensing logic block to determine a distance of a current solution from a target solution based on a combination of respective outputs from the set of aCAM modules. The controller can then iteratively modify an input value for a subset of data lines until the current solution converges based on a convergence condition.

Abstract: An analog content-address memory (analog CAM) having approximation matching and an operation method thereof are provided. The analog CAM includes an inputting circuit, at least one analog CAM cell and an outputting circuit. The inputting circuit is configured to provide an inputting data. The analog CAM cell is connected to the inputting circuit and receives the inputting data. The analog CAM cell has a mild swing match curve whose highest point corresponds to a stored data. A segment from the highest point of the mild swing match curve to a lowest point of the mild swing match curve corresponds to at least three data values. The outputting circuit is connected to the analog CAM cell and receives a match signal from the analog CAM cell. The outputting circuit outputs a match approximation level according to the match signal.

Abstract: A memory device might include control circuitry configured to cause the memory device to compare input data to data stored in memory cells connected to a data line, cause a first level of current to flow from the data line in response to a mismatch between one digit of the input data and data stored in a respective pair of memory cells, cause a second level of current to flow from the data line in response to a mismatch between a different digit of the input data and the data stored in a respective pair of memory cells, compare a representation of a level of current in the data line to a reference, and deem the input data to potentially match or not match the data stored in the plurality of memory cells in response to the comparison.

Abstract: A compact, low-leakage multi-bit content-addressable memory (CAM) cell is provided. The CAM devices includes a transmission gate, having a positive field effect transistor (“PFET”) and a negative field effect transistor (“NFET”), configured to compare a compare data input with storage node data having a first logic state. The CAM devices includes a passgate, in communication with the transmission gate, configured to compare the compare data input having a first logic state with the storage node data having a second logic state, wherein the passgate is an n-channel metal oxide semiconductor (NMOS) transistor and controls propagation of the compare data input, and the storage node data of a storage cell is used to control the passgate based on the storage node data. The CAM devices includes a PFET stack, having a first PFET and a second PFET, in communication with the transmission gate and the passgate, configured to compare the compare data input with the storage node data having the second logic state.

Abstract: The application provides a Content Addressable Memory (CAM) cell, a CAM memory device and an operation method thereof. The CAM cell includes: a plurality of parallel-coupled flash memory cells: wherein a storage data of the CAM cell is based on a combination of a plurality of threshold voltages of the parallel-coupled flash memory cells.

Abstract: A Static Random Access Memory (SRAM) device in a binary neural network is provided. The SRAM device includes an SRAM inference engine having an SRAM computation architecture with a forward path that include multiple SRAM cells forming a chain of SRAM cells such that an output of a given one of the multiple SRAM cells is an input to a following one of the multiple SRAM cells. The SRAM computation architecture is configured to compute a prediction from an input. The SRAM computation architecture is configured to store ternary data and perform local computations on the ternary data.

Abstract: The present invention discloses a memory device and operation method thereof. The operation method comprises: programming a plurality of first strings of a plurality of string pairs representing a finite state machine (FSM) to an in-memory-searching (IMS) array of a memory device; programming a plurality of second strings of the string pairs to a working memory of the memory device; and programming a string representing a starting state of the FSM to a buffer of the memory device.

Abstract: Apparatus includes a plurality of memory cells (e.g., a dynamic random access memory (DRAM)) addressable as rows and columns and a plurality of matching circuits configured to be coupled to respective bit lines associated with the columns A control circuit is configured to store respective reference sequences (e.g., binary-encoded k-mer patterns) in respective ones of the columns, to sequentially provide rows of bits stored in the memory cells and bits of a query to the matching circuits, and to identify one of the reference sequences as corresponding to the query responsive to comparisons by the matching circuits.

Abstract: Systems are methods are provided for implementing an analog content addressable memory (analog CAM), which is particularly structured to allow for an amount of variance (fuzziness) in its search operations. The analog CAM may search for approximate matches with the data stored therein, or matches within a defined variance. Circuitry of the analog CAM may include transistor-source lines that receive search-variance parameters, and/or data lines that receive search-variance parameters explicitly within the search input data. The search-variance parameters may include an upper bound and a lower bound that define a range of values within the allotted amount of fuzziness (e.g., deviation from the stored value). The search-variance parameters may program (using analog approaches) the analog CAM to perform searches having a modifiable restrictiveness that is tuned dynamically, as defined by the input search-variance. Thus, highly efficient hardware for complex applications involving fuzziness are enabled.

Abstract: A bit line (BL) may be coupled at a first end to a BL driver (BLD) and at a second end to a BL receiver (BLR). The BL include a plurality of sections and each BL section may be coupled to at least one corresponding sectional configuration memory latch controlled by: at least one sectional word line write (WLW-k) signal, which when asserted enables data to be written into the at least one corresponding sectional configuration memory latch when a corresponding tri-stateable sectional driver (SD-k) is activated, and at least one sectional word line read (WLR-k) signal, which when asserted enables data to be from the at least one corresponding sectional configuration memory latch when the corresponding sectional pull-up (PU-k) is activated.

Abstract: A memory device for data searching and a data searching method thereof are provided. The data searching method includes the following steps. A searching word is received and then divided into a plurality of sections. The sections are encoded as a plurality of encoded sections, so that the encoded sections may correspond to a plurality of memory blocks in a memory array. The encoded sections are directed into the memory blocks to perform data comparisons and obtaining a respective result of data comparison. Thereafter, addresses of bit lines which match the searching word are obtained according to respective result of data comparison for each of memory block.

Abstract: A TCAM comprises a plurality of first search lines, a plurality of second search lines, a plurality of memory cell strings and one or more current sensing units. The memory cell strings comprise a plurality of memory cells. Each of the memory cells is coupled to one of the first search lines and one of the second search lines. The current sensing units, coupled to the memory cell strings. In a search operation, a determination that whether any of the data stored in the memory cell strings matches a data string to be searched is made according to whether the one or more current sensing units detect current from the memory cell strings, or according to the magnitude of the current flowing out from the memory cell strings detected by the one or more current sensing units.

Abstract: An access request is received. The access request comprises a physical page address corresponding to a primary memory block of a memory device, an input security key, and a logical page address corresponding to the physical page address. The input security key is provided as input to a (CAM) block that stores a plurality of security keys to verify that the input security key matches a stored security key. A location of the stored security key is checked to verify that it corresponds to the logical page address included in the access request based a predetermined mapping. Based on verifying that the stored security key corresponds to the logical page address included in the access request, the physical page address corresponding to the primary memory block is accessed.

Abstract: Encoding of domain logic rules in an analog content addressable memory (aCAM) is disclosed. By encoding domain logic in an aCAM, rapid and flexible search capabilities are enabled, including the capability to search ranges of analog values, fuzzy match capabilities, and optimized parameter search capabilities. This is achieved with low latency by using only a small number of clock cycles at low power. A domain logic ruleset may be represented using various data structures such as decision trees, directed graphs, or the like. These representations can be converted to a table of values, where each table column can be directly mapped to a corresponding row of the aCAM.

Abstract: A three dimension memory device and a ternary content addressable memory cell are provided. The ternary content addressable memory cell includes a first memory cell, a second memory cell, a first search switch, and a second search switch. The first memory cell is disposed in a first AND type flash memory line. The second memory cell is disposed in a second AND type flash memory line. The first search switch is coupled between a first bit line corresponding to the first AND type flash memory line and a match line, and is controlled by a first search signal to be turned on or cut off. The second search switch is coupled between a second bit line corresponding to the second AND type flash memory line and the match line, and is controlled by a second search signal to be turned on or cut off.

Abstract: In one embodiment, content-addressable memory lookup result integrity checking and correcting operations are performed, such as, but not limited to protecting the accuracy of packet processing operations. A lookup operation is performed in the content-addressable memory entries based on a lookup word resulting in one or more match vectors. One or multiple result match vectors are produced, depending on whether each of the content-addressable memory entries and the lookup word have been partitioned into multiple portions. An error accuracy code (e.g., error detection, error correction) is acquired for each portion of the one or multiple portions based on a corresponding portion of the lookup word. An accurate result is generated by processing each of the result match vector(s) with their corresponding error accuracy code. When using multiple portions, the (possibly corrected) result match vectors are combined into a single accurate result match vector.

Abstract: A three-dimension (3D) memory device and an operation method thereof are provided. The 3D memory device includes: a memory array including a plurality of memory cells; a controller coupled to the memory array; and a match circuit coupled to memory array, wherein in data search and match, the controller selects from the memory cells a plurality of target memory cells sharing a same target global signal line, and the controller selects a plurality of target word lines sharing the target global signal line as a plurality of target search lines, wherein a search data sends to the target memory cells via the target search lines for data matching; the target global signal line is precharged; and outputting a match address based on whether a voltage on the target global signal line is pulled down or not.

Abstract: A lookup-table type TL-TCAM hardware search engine includes a SL decoder, a TL-TCAM array, and the data stored in the TL-TCAM hardware search engine is obtained by performing lookup table operation in the corresponding TCAM hardware search engine, the SL decoder is used to decode the search word and send it to the TL-TCAM hardware search engine array, and the decoding is to convert a search word SL corresponding to data in a TCAM hardware search engine table into a search word LSL corresponding to TL-TCAM hardware search engine table data, the effect is that TCAM adds a decoder, cooperates with the decoder and by lookup table method converts the TCAM table data to a new circuit unit that can be adapted to the added search line.

Abstract: A memory apparatus for detecting false hits in a content-addressable memory (CAM) is disclosed. The memory apparatus includes a controller coupled to the CAM and a memory. The controller receives a search result including an address from the CAM, the address corresponding to a matching entry from a first set of data entries that matches a search tag. The controller provides a read address based on the address to the memory, which returns a second data entry from a second set of data entries corresponding to the read address. The controller receives the read data and generates an error detection result based on a comparison between the second data entry and the search tag.

Abstract: A system and method for random number generation are presented. A plurality of parameter values are generated by inspecting a plurality of cells in a memory array. Each parameter value in the plurality of parameter values is associated with a cell of the plurality of cells. A plurality of unstable cells in the plurality of cells are identified. Each unstable cell in the plurality of unstable cells is associated with a parameter value within a threshold value of an average of the plurality of parameter values. First, second and third groups of cells in the plurality of unstable cells identified and associated with values. The groups are determined based upon the parameter values associated with the cells in each group. A data stream is generated using the first group of cells, the second group of cells, and the third group of cells.

Abstract: A search pattern is generated based on an input search word comprising a first sequence of bits. The search pattern comprises a first set of signals representing the input search word and a second set of signals representing a second sequence of bits comprising an inverse of the first sequence of bits. The search pattern is provided as input to search lines of a content addressable memory (CAM) block. The search pattern causes at least one string in the CAM block to be conductive and provide a signal to a page buffer connected to the string in response to the input search word matching a data entry stored on the string. A location of the data entry is determined based on data read from the page buffer and the location is output.

Abstract: The present disclosure includes apparatuses and methods for acceleration of data queries in memory. A number of embodiments include an array of memory cells, and processing circuitry configured to receive, from a host, a query for particular data stored in the array of memory cells, wherein the particular data corresponds to a search key generated by the host, search portions of the array of memory cells for the particular data corresponding to the search key, determine data stored in the portions of the array of memory cells that matches the search key, and transfer the data that matches the search key to the host.

Abstract: An analog content addressable memory cell includes a match line, a high side, and a low side. The high side encodes a high bound on a range of values and includes a first three terminal memory device. The first three terminal memory device includes a first gate that sets a high voltage bound of the first three terminal memory device. Specifically, an input voltage applied at the first gate of the first memory device, if higher than the high voltage bound, turns the first memory device ON which discharges the match line. Similarly, the low side encodes a lower bound on a range of values and includes a second three terminal memory device. The second three terminal memory device includes a second gate that sets a low voltage bound of the second three terminal memory device. Specifically, an input voltage applied at the second gate of the second memory device, if lower than the low voltage bound, turns the first memory device ON which discharges the match line.

Abstract: A ternary processing cell used as a memory cell and capable of in-memory arithmetic is disclosed which includes a first memory cell, adapted to hold a first digital value, a second memory cell, adapted to hold a second digital value, wherein a binary combination of the first digital value and the second digital value establishes a first ternary operand, a ternary input establishing a second ternary operand, and a ternary output, wherein the ternary output represents a multiplication of the first ternary operand and the second ternary operand.

Abstract: A memory cell includes a first resistive memory element, a second resistive memory element electrically coupled with the first resistive memory element at a common node, and a switching element comprising an input terminal electrically coupled with the common node, the switching element comprising a driver configured to float during one or more operations.

Abstract: A memory includes a memory array comprising a plurality of pages and a page buffer. The page buffer includes first registers, second registers, compare logic, and third registers. The first registers store data read from a page of the memory array. The second registers store a user pattern. The compare logic compares the data stored in the first registers to the user pattern stored in the second registers. The third registers store the comparison results.

Abstract: Embodiments described herein provide an apparatus comprising a plurality of processing resources including a first processing resource and a second processing resource, a shared local memory communicatively coupled to the first processing resource and the second processing resource, and a processor to receive an instruction to initiate a matrix multiplication operation, write a first set of matrix data into a first set of registers, and share the first set of matrix data between the first processing resource and the second processing resource for use in the matrix multiplication operation. Other embodiments may be described and claimed.

Abstract: An efficient encoding/decoding method for block compression for RRR, provides an area-saving method that operates at high speed even with a dense bit string. A block encoding device generates blocks having a first block length by dividing an input bit string into a plurality of blocks, determines a first weight of each block from the number of 1 values included in the bit string, divides each block into small blocks having a second block length, determines a first order of the blocks in a set in which predetermined bit strings having the first block length and the first weight are arranged in a predetermined order on the basis of the weight and value of each of the small blocks, and generates block encoding data by converting the bit string of each block into the values of the determined first weight and first order.

Abstract: The base-2n in-memory adder device mainly comprises Perpetual Digital Perceptron (PDP) in-memory adder with Read Only Memory (ROM) arrays for storing the binary sum codes of the addition table for processing the addition operations of two n-bit binary integer operands. Since the integer numbers can be represented by the binary codes of multiple digits of base-2n integer numbers, the base-2n in-memory adder device can iterate multiple times of the digit-additions to complete the binary code addition for two m-digit base-2n integer operands. Consequently, the base-2n in-memory adder device can improve the computation efficiency and save the computation power by eliminating the data transportations between Arithmetic Logic Unit (ALU), registers, and memory units.

Abstract: A memory system includes a nonvolatile memory device including a CAM (content addressable memory) region; and a controller including a random access memory which stores an initial setting parameter of the nonvolatile memory device and a control unit which controls an initializing operation for a setting parameter of the nonvolatile memory device stored in the CAM region, wherein the control unit includes a parameter determination circuit which determines whether the initializing operation has succeeded or not, by comparing a verify parameter received from the nonvolatile memory device and the initial setting parameter.

Abstract: An endpoint in a network may make posted or non-posted write requests to another endpoint in the network. For a non-posted write request, the target endpoint provides a response to the requesting endpoint indicating that the write request has been serviced. For a posted write request, the target endpoint does not provide such an acknowledgment. Hence, posted write requests have lower overhead, but they suffer from potential synchronization and resiliency issues. While non-posted write requests do not have those issues, they cause increased load on the network because such requests require the target endpoint to acknowledge each write request. Introduced herein is a network operation technique that uses non-posted transactions while maintaining a load overhead of the network as a manageable level. The introduced technique reduces the load overhead of the non-posted write requests by collapsing and reducing a number of the responses.

Abstract: A search pattern is generated based on an input search word comprising a first sequence of bits. The search pattern comprises a first set of signals representing the input search word and a second set of signals representing a second sequence of bits comprising an inverse of the first sequence of bits. The search pattern is provided as input to search lines of a content addressable memory (CAM) block. The search pattern causes at least one string in the CAM block to be conductive and provide a signal to a page buffer connected to the string in response to the input search word matching a data entry stored on the string. A location of the data entry is determined based on data read from the page buffer and the location is output.

Abstract: Presented herein are techniques to support service chains in a network, such as a spine-leaf switch fabric network, that also uses overlay networking technology. More specifically, in accordance with the techniques presented herein, a linecard at an ingress network node for an overlay network is configured to receive a packet. Using information obtained from the packet, a hardware lookup is performed at the linecard to identify a service chain with which the packet is associated. An entry corresponding to the identified service chain is identified within a memory location of the linecard, where the entry includes overlay network information for forwarding packets along the identified service chain via an overlay network. Using the overlay network information included in the identified entry, the packet is encapsulated with an overlay packet header for use in forwarding the packet via the overlay network.

Abstract: Various implementations described herein are directed to an integrated circuit having an array of bitcells. The integrated circuit may include latch circuitry having a latch for each row of bitcells that latches valid match data into the latch for each row of bitcells. The integrated circuit may include priority encoding circuitry that receives the valid match data from the latch for each row of bitcells. The integrated circuit may include first logic circuitry coupled between the array of bitcells and the priority encoding circuitry to assist with providing the valid match data to the latch circuitry.

Abstract: Example techniques herein search a graph data structure and retrieve data associated with a result node or edge. The graph can include nodes representing, e.g., processes or files, and edges between the nodes. A control unit can produce a discrete finite automaton (DFA) based on a query. The control unit can traverse the DFA in conjunction with the graph, beginning at an initial state of the DFA and an entry-point node of the graph, to reach a result node of the graph associated with a triggering state of the DFA. Traversal can include unwinding upon reaching a terminal state of the DFA, in some examples. The control unit can retrieve data associated with the result node or an edge connected there to, and can provide the data via a communications interface. A data-retrieval system can communicate with a data-storage system via the communications interface, in some examples.

Abstract: A method including: in a network element that includes one or more hardware memory resources of fixed storage capacity for storing data used to configure a plurality of networking features of the network element and a utilization management process running on the network element, the utilization management process performing operations including: obtaining a plurality of entries of the one or more hardware memory resources representing utilization of the one or more hardware memory resources by network traffic passing through the network element; sorting the plurality of entries of the one or more hardware memory resources by statistics associated with the network traffic passing through the network element to produce sorted entries; and sending the extracted to a network management application for display is disclosed. An apparatus and one or more non-transitory computer readable storage media to execute the method are also provided.

Abstract: Data blocks are cached in a persistent cache (“NV cache”) allocated from as non-volatile RAM (“NVRAM”). The data blocks may be accessed in place in the NV cache of a “source” computing element by another “remote” computing element over a network using remote direct memory access (“RMDA”). In order for a remote computing element to access the data block in NV cache on a source computing element, the remote computing element needs the memory address of the data block within the NV cache. For this purpose, a hash table is stored and maintained in RAM on the source computing element. The hash table identifies the data blocks in the NV cache and specifies a location of the cached data block within the NV cache.

Abstract: A reprogrammable dot product engine ternary content addressable memory (DPE-TCAM) is provided. The DPE-TCAM comprises a TCAM crossbar array comprising a plurality of match lines and a plurality of search lines. Each search line and match line are coupled together by a memory cell. A plurality of search line drivers are configured to apply a voltage signal to the search lines representing bits of a search word. Current sensing circuitry is coupled to the output of the plurality of match lines and configured to sense a current on the match lines, the sensed current indicating whether the search word and a stored word matched and, if not, the degree of mismatch between the two words.

Abstract: A ternary content addressable memory unit includes a first inverter, a second inverter, a third inverter, a fourth inverter, a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a seventh transistor, and an eighth transistor. The first inverter includes an input terminal, and an output terminal coupled to a first node. The second inverter includes an input terminal coupled to the first node and an output terminal coupled to the input terminal of the first inverter. The third inverter includes an input terminal coupled to a second node and an output terminal. The fourth inverter includes an input terminal coupled to the output terminal of the third inverter and an output terminal coupled to the second node.

Abstract: A methodology and structure for a encoding a data stat signal in the data lock signal, e.g., the data strobe signal such as DBQ. The data strobe signal can maintain the clock continuity, e.g., the rise and fall edges are at the timing signal, and the data inversion can be based on the amplitude of the data strobe signal. This allows the data set on the data lines, e.g., D0-D7, to either be non-inverted or inverted, to save power consumed in the memory device.

Abstract: Systems, devices, and methods are provided for implementing a low power and area ternary content addressable memory (TCAM). The TCAM comprises a plurality of memristor-based TCAM (mTCAM) cells, each consisting of two memristors and two transistors. The first and second memristors are connected in series, with a first end of the first memristor connected to a first data line, first end of the second memristor connected to a second data line, and the second ends of the resistors connected together at a common node. The drain of a programming transistor is connected to the common node, with the source connected to a third data line, and the gate connected to a word line. Common node is further connected to the gate of a match-line transistor, such that if a mismatch is detected common node applies a voltage to the gate to pull-down the voltage on a pre-charged match line.

Abstract: A substring can be detected within a string of data elements through a method that includes partitioning and distributing the string of data elements to an ordered list of segments having equal lengths greater than or equal to the length of the substring. A substring match within a segment of the ordered list of segments can be detected by sequentially comparing the substring with each segment of the ordered list of segments. A carry vector that includes the substring match can be created, in response to detecting the substring match that is a partial match. It can be determined that a carry vector exists by comparing the substring with the segment of the ordered list of segments, and it can be subsequently determined that a full match exists between the carry vector and the segment of the ordered list of segments.

Abstract: A memory architecture includes: a plurality of cell arrays each of which comprises a plurality of bit cells, wherein each of bit cells of the plurality of cell arrays uses a respective variable resistance dielectric layer to transition between first and second logic states; and a control logic circuit, coupled to the plurality of cell arrays, and configured to cause a first information bit to be written into respective bit cells of a pair of cell arrays as an original logic state of the first information bit and a logically complementary logic state of the first information bit, wherein the respective variable resistance dielectric layers are formed by using a same recipe of deposition equipment and have different diameters.

Abstract: A memory device capable of reading reference data while achieving optimization of electric power consumption is provided. A memory device includes a memory area storing reference data of N (?1) dimensions each composed of M (?1) bits. A number of memory grains each composed of nonvolatile memory and power drivers paired with the memory grains to supply electrical power to the memory grains are provided in each region specified by column lines in the number and M row lines, the number being one to N inclusive. When the power driver receives a control signal from the corresponding one of the column lines, a control signal from the corresponding one of the M row lines, and a clock signal, the power driver supplies electrical power to the memory grain in synchronization with the clock signal.

Abstract: A cell structure is disclosed. The cell structure includes a first unit comprising a first group of transistors and a first data latch, a second unit comprising a second group of transistors and a second data latch a read port unit comprising a plurality of p-type transistors, a search line and a complementary search line, the search line and the complementary search line function as input of the cell structure, and a master line, the master line functions as an output of the cell structure, the first unit is coupled to the second unit, both the first and the second units are coupled to the read port unit. According to some embodiments, the first data latch comprises a first and a second p-type transistors, a first and a second n-type transistors.

Abstract: A method including: in a network element that includes one or more hardware memory resources of fixed storage capacity for storing data used to configure a plurality of networking features of the network element and a utilization management process running on the network element, the utilization management process performing operations including: obtaining a plurality of entries of the one or more hardware memory resources representing utilization of the one or more hardware memory resources by network traffic passing through the network element; sorting the plurality of entries of the one or more hardware memory resources by statistics associated with the network traffic passing through the network element to produce sorted entries; and sending the extracted to a network management application for display is disclosed. An apparatus and one or more non-transitory computer readable storage media to execute the method are also provided.

Abstract: A semiconductor device is provided where high-speed search operation can be performed. The semiconductor device includes a plurality of search memory cells arranged in a matrix form a plurality of search line pairs which are respectively provided corresponding to memory cell columns and which respectively transmit a plurality of search data to be compared with data stored in the search memory cells, a plurality of search drivers which are respectively arranged at corresponding to one end sides of the search line pairs and which drive the search line pairs according to the search data, and a plurality of assist circuits which are respectively provided corresponding to the other end sides of the search line pairs and which assist driving corresponding search line pairs according to the search data.

Abstract: The present disclosure describes an example method for cell placement in an integrated circuit layout design. The method includes retrieving, from a cell library, first and second cells each including a first local metal track proximate to a top boundary and a second local metal track proximate to a bottom boundary. The method includes placing, by a processor, the first and second cells in a layout area including global metal tracks of first and second types. Each global metal track of the first type and each global metal tracks of the second type alternate between one another in the layout area. The first and second local metal tracks of the first cell is aligned with adjacent first global metal track of the first and second types, respectively. The first and second local metal tracks of the second cell is aligned with adjacent second global metal track of the first and second types, respectively.

Abstract: A lookup circuit evaluates hash functions that map keys to addresses in lookup tables. The circuit may include multiple hash function sub-circuits, each of which applies a respective hash function to an input key value, producing a hash value. Each hash function sub-circuit may multiply bit vectors representing key values by a sparse bit matrix and may add a constant bit vector to the results. The hash function sub-circuits may be constructed using odd-parity circuits that accept as inputs subsets of the bits of the bit vectors representing the key values. The sparse bit matrices may be chosen or generated so that there are at least twice as many 0-bits per row as 1-bits or there is an upper bound on the number of 1-bits per row. Using sparse bit matrices in the hash function sub-circuits may allow the lookup circuit to perform lookup operations with very low latency.