Abstract: A method and apparatus for constructing MEMS devices is provided which employs a low cost molded housing that simultaneously provides precise and accurate alignment, mechanical protection, electrical connections and structural integrity for mounting optical and MEMS components. The package includes a MEMS die mounting surface, an optical component mounting surface and an optical imaging window monolithically fabricated with the MEMS die mounting surface in a predetermined orientation for providing alignment between the MEMS die and optical components. A MEMS adaptor plate is provided to facilitate connections of a MEMS die to external components.

Abstract: Methods for writing include applying a current pulse to a racetrack memory medium to position a domain in proximity to a thermally triggered magnon source in contact with the racetrack memory medium; activating a heat source/sink in contact with the magnon source to create a thermal gradient in the magnon source, generating a magnon flow in the magnon source; and changing a magnetization in the racetrack memory medium by spin torque transfer from the magnon flow.

Abstract: Racetrack memory units and methods for writing include a racetrack memory medium; a heat source/sink configured to change temperature according to an applied current; and a magnon source material in contact with the racetrack memory medium and the heat source/sink, such that a temperature of the heat source/sink causes a magnon flow in the magnon source material that injects a domain wall in the racetrack memory medium.

Abstract: A magnetic memory cell includes: a magnetization recording layer; and a magnetic tunneling junction section. The magnetization recording layer includes a ferromagnetic layer with perpendicular magnetic anisotropy. The magnetic tunneling junction section is used for reading information in the magnetization recording layer. The magnetization recording layer includes two domain wall moving areas.

Abstract: The present invention uses a ferromagnetic thin wire having a domain wall inside, with the magnetic moment at the center thereof being perpendicular to the longitudinal axis of the thin wire. With the domain wall being fixed by a domain wall fixation device (e.g. antiferromagnetic thin wires) so that the domain wall is prevented from moving in the ferromagnetic thin wire, when a direct current is supplied, the magnetic moment rotates in the immobilized domain wall. This rotation of the moment can be detected by a TMR element or the like. This configuration of the ferromagnetic thin wire element can be directly used to create a microwave oscillator or magnetic memory.

Abstract: A magnetic structure includes a first portion and a plurality of second portions. The first portion extends in a first direction. The plurality of second portions extend from ends of the first portion in a second direction. The first and second directions are perpendicular to one another. Two magnetic domains magnetized in directions opposite to each other and a magnetic domain wall between the magnetic domains are formed in the magnetic structure.

Abstract: A magnetic shift register including at least one magnetic track is provided. Each magnetic track has at least one set of burst data formed by a plurality of consecutive magnetic domains. Each magnetic domain has a magnetization direction corresponding to a stored data. A head magnetic domain having a given magnetization direction corresponding to a given stored data is set at a most front of the set of burst data, and the head magnetic domain and the set of burst data form a data storage unit. A method for reading a magnetic shift register is provided.

Abstract: Provided are a data storage device using magnetic domain wall movement and a method of operating the data storage device. The data storage device includes a first magnetic layer for writing data having two magnetic domains magnetized in opposite directions to each other and a second magnetic layer for storing data formed on at least one side of the first magnetic layer. The data storage device may further include a data recording device connected to both ends of the first magnetic layer and the end of the second magnetic layer which is not adjacent to the first magnetic layer, a read head formed a predetermined distance from the end of the second magnetic layer which is not adjacent to the first magnetic layer, and a current detector connected to the read head and the data recording device.

Abstract: Provided are an information storage device and a method of operating the same. The information storage device includes: a magnetic layer having a plurality of magnetic domain regions and a magnetic domain wall interposed between the magnetic domain regions; a first unit disposed on a first region which is one of the plurality of magnetic domain regions for recording information to the first region; a second unit connected to the first unit for inducing a magnetic field so as to record information to the first region.

Abstract: Example embodiments may provide data storage devices using movement of a magnetic domain wall and/or a method of operating magnetic domain data storage devices. The data storage device may include a first magnetic layer for writing data having two magnetic domains magnetized in different directions, a second magnetic layer for storing data at a side of the first magnetic layer, a data recording device connected to the first magnetic layer and the second magnetic layer, and a plurality of reading heads configured to read the second magnetic layer. The data storage device may store a larger amount of data without requiring moving mechanical systems.

Abstract: A writing device can change the direction of the magnetic moment in a magnetic shift register, thus writing information to the domains or bits in the magnetic shift register. Associated with each domain wall are large magnetic fringing fields. The domain wall concentrates the change in magnetism from one direction to another in a very small space. Depending on the nature of the domain wall, very large dipolar fringing fields can emanate from the domain wall. This characteristic of magnetic domains is used to write to the magnetic shift register. When the domain wall is moved close to another magnetic material, the large fields of the domain wall change the direction of the magnetic moment in the magnetic material, effectively “writing” to the magnetic material.

Abstract: An optical device and a method for manufacturing the optical device. An optical device having a molded-package structure includes: a lead frame having a ferrule-mounting portion; a ferrule mounted on the ferrule-mounting portion; and a molding resin that encapsulates the lead frame and the ferrule, molding, except that an end of the ferrule protrudes through and outside of the surface of the molding resin. The first groove parallel to a longitudinal axis of the ferrule is located on the ferrule-mounting portion and the ferrule is placed on the first groove. Thus, the ferrule is hardly ever detached from a ferrule-mounting portion, an optical fiber is hardly ever damaged, and an optical coupling is hardly ever obstructed.

Abstract: A magnetic domain propagation register carrying out the propagation of the domains under the effect of electric currents, comprising an insulating substrate, a soft magnetic layer on the insulating substrate, in which is formed a propagation channel, a hard magnetic layer on the soft magnetic layer, except in areas defining the propagation channel, an insulating layer on the soft and hard magnetic layers, and a conduction layer in a Greek border pattern on the insulating layer, constituted by parallel segments perpendicular to the propagation channel, the propagation channel comprising widened boxes at the intersection of the propagation channel with the segments of the conduction layer.