Abstract: The present invention relates to a magnetic sensor that provides the sensitivity adjustment on a wafer and that has a superior mass productiveness and a small characteristic variation. The magnetic sensor includes a magnetic sensitive portion provided on a substrate that is made of a compound semiconductor and that has a cross-shaped pattern. This magnetic sensitive portion includes input terminals and output terminals. At least one of input terminals of the input terminal is series-connected to a trimming portion having a compound semiconductor via a connection electrode. By performing laser trimming on the trimming portion series-connected via the connection electrode to the magnetic sensitive portion while performing a wafer probing (electric test), the adjustment of the constant voltage sensitivity is provided.

Abstract: Disclosed is a memory card attached to an external apparatus for transmitting and receiving data via the external apparatus and an optical communication. The memory card includes a power-supply potential unit receiving electric power supply at a predetermined voltage from the external apparatus; a ground potential unit connected to a ground potential unit of the external apparatus; a light-receiving unit receiving an optical signal transmitted from the external apparatus or another memory card; and a light-emitting unit transmitting the optical signal to the external apparatus or another memory card. In the memory card, the light-receiving unit and the light-emitting unit are arranged such that the signal received by the light-receiving unit and the signal transmitted from the light-emitting unit are transmitted in a straight line.

Abstract: A magnetic memory device includes a substrate for reading and a magnetic memory cell. The substrate has a channel layer. The magnetic memory cell is formed on the substrate and has a magnetized magnetic material that transfers spin data to electrons passing the channel layer. Data stored in the magnetic memory cell are read by a voltage across both side ends of the channel layer that is generated when the electrons passing the channel layer deviate in the widthwise direction of the channel layer by a spin Hall effect.

Abstract: An information storage device includes a ferroelectric layer having a first surface and a second surface opposite the first surface. A common electrode layer is formed on the first surface of the ferroelectric layer. At least two conductive track layers separated from each other are positioned on the second surface of the ferroelectric layer. A conductive roller that has two opposite ends supported by the conductive track layers is provided. The conductive roller is movable along a conductive track. A ferromagnetic layer creates a magnetic field on the conductive roller.

Abstract: A memory device. There is a hall effect device, a current source in electrical communication with the hall effect device, a current drain in electrical communication with the hall effect device, a first sensor arm in electrical communication with the hall effect device and current drain, and a second sensor arm in electrical communication with the hall effect device and current drain. The second sensor arm has a higher resistance than the first sensor arm. There is a voltage measurement module in electrical communication with the current drain and configured to provide a signal based on the voltage in the current drain.

Abstract: Shifts in the apparent charge stored on a floating gate (or other charge storing element) of a non-volatile memory cell can occur because of the coupling of an electric field based on the charge stored in neighboring floating gates (or other neighboring charge storing elements). The problem occurs most pronouncedly between sets of adjacent memory cells that have been programmed at different times. To compensate for this coupling, the read process for a given memory cell will take into account the programmed state of a neighbor memory cell if the neighbor memory cell was programmed subsequent to the given memory cell. Techniques for determining whether the neighbor memory cell was programmed before or after the given memory cell are disclosed.

Abstract: A magnetic random access memory (MRAM) cell is provided. The magnetic random access memory cell comprises an insulating substrate, an electrically conductive base line provided on the insulating substrate, at least one magnetic quantum dot attached to the base line, and an electrically conductive top line provided across the at least one magnetic quantum dot in a direction transverse to the base line. A junction is thereby formed between the base line and the top line. At least one of the base line and the top line comprise a magnetic material. A method for manufacturing the magnetic random access memory cell is also provided. In addition, an array of magnetic random access memory cells is provided, as well as a method for manufacturing same.

Abstract: A non-volatile RAM device is disclosed which utilizes a plurality of ferromagnetic bits (6) each surrounded by a coil of a write line (13) for directing the remnant polarity thereof is disclosed. The direction of magnetic remnance in each bit (6) is dictated by the direction of a current induced into write line (13). Further, a magneto sensor (7) comprising a magneto resistor (1) coupled to a collector (2) is placed approximate each bit (6). The magneto resistor (1) is coupled to a control circuit (30) for receiving current. The current passing across magneto resistor (1) is biased in a direction either right or left of the original current flow direction. The collector is coupled to a sense line (4), which in turn, is coupled to an amplifier (12). When current flow is biased in the direction of the collector, the serial resistance of the magneto resistor will be decreased, and the sense line (4) will receive a high amount of current.

Abstract: A hybrid memory device combines a ferromagnetic layer and a Hall Effect device. The ferromagnetic layer is magnetically coupled to a portion of a Hall plate, and when such plate is appropriately biased, a Hall Effect signal can be generated whose value is directly related to the magnetization state of the ferromagnetic layer. The magnetization state of the ferromagnetic layer can be set to correspond to different values of a data item to be stored in the hybrid memory device. The magnetization state is non-volatile, and a write circuit can be coupled to the ferromagnetic layer to reset or change the magnetization state to a different value. The memory device can also be fabricated to include an associated transistor (or other suitable switch) that functions as an isolation element to reduce cross-talk and as a selector for the output of the device when such is used in a memory array.

Abstract: A new type of magneto-electronic element, such as a spin transistor or hybrid hall effect device, can be used to construct memory systems to replace conventional cache, primary, secondary and long term (archival) storage. The magneto-electronic element is non-volatile, and has switching speeds and integration densities that compare favorably with conventional semiconductor random access memories, such as DRAM. In another embodiment, an integrated memory system may be constructed that synthesizes one or more previously disparate levels of conventional memory (i.e., a combination of primary and secondary storage) so that memory organization is further simplified and performance and cost are improved.

Abstract: Magnetic integrated circuit structures exhibit desirable characteristics for purposes of realizing a magnetic semiconductor memory. In combination with a carrier-deflection-type magnetic field sensor, each of a variety of magnet structures realize a condition in which the magnetic field is substantially orthogonal to the direction of travel of carriers of a sense current, thereby achieving maximum sensitivity. In general, the magnetic structures are highly efficient and achieve a high degree of control of the magnetic field. As a result, a minimum-size device such as a MOS device suffices for purposes of sourcing a magnetizing current. By basing a magnetic memory cell on a single minimum-size MOS device, a small cell may be realized that compares favorably with a conventional DRAM or FLASH memory cell. The greater degree of control over the magnetic field afforded by the magnetic structures enables cross-coupling between cells in a memory array to be minimized.

Abstract: A non-volatile random access memory is described incorporating a plurality of memory cells, each memory cell having a Hall effect device including amorphous magnetic material and a switch for directing current through the flail effect device. An array of memory cells are interconnected by word lines, current lines, and bit lines. The invention overcomes the problem of a rugged non-volatile random access memory with long term reliability.

Abstract: A magnetic thin film memory device having information recorded in a magnetic thin film thereof by the direction of magnetization, and adapted to reproduce the recorded information on the basis of the voltage generated as a result of the change of the magnetization direction due to the extraordinary Hall effect, magnetoresistance effect or the like.A magnetic thin film memory device in which a magnetic thin film is formed of ferrimagnetic substance having perpendicular magnetic anisotropy, and producing extraordinary Hall effect in the composition of RE rich and having the minimum saturation field which enables recording in a small magnetic field and is hard to be influenced by temperatures.

Abstract: An apparatus and method for imaging the magnetic structure and the magnetic domains of a sample is described incorporating a scanning tunneling microscope (STM), a voltage generator for varying the voltage on the tip, an ammeter for measuring the current through the tip, circuitry to determine the tip voltage at zero current and a current source for passing current longitudinally through the sample. The invention may further include an applied magnetic field in the plane of the sample and orthogonal to current passing through the sample. A high density non-volatile memory is described incorporating the above apparatus except for the applied magnetic field and further incorporating a layer of ferromagnetic material having magnetic domains therein indicative of information.

Abstract: A nonvolatile random access memory is disclosed having a substrate (50) carrying separate magnetically polarizable domains (19) each surrounded by a full write loop member (18) and arranged to penetrate the Hall channel (36) of a dual drain FET (16) with its residual magnetic field. The domains are organized in word rows and bit columns, are each written to by a single full write current through the surrounding loop member and each read by a comparator connected to the FET drains (42, 42'). The memory can be fabricated in a variety of forms (e.g. a planar card).

Abstract: A non-volatile, static magnetic memory device, whose operation is based on the Hall effect, is disclosed. The device includes a magnetic patch which stores data in the form of a magnetic field, a semiconductor Hall bar and a pair of integrally-formed bipolar transistors used for amplifying and buffering the Hall voltage produced along the Hall bar. Current is forced to flow down the length of the Hall bar causing a Hall voltage to be developed in a direction transverse to the direction of both the magnetic field and the current. The bases of the bipolar transistors are ohmically coupled to the Hall bar to sense the Hall voltage--the polarity of which is representative of the stored information. A system of current carrying conductors is employed for writing data to individual magnetic patches.

Abstract: A non-volatile, static magnetic memory device, whose operation is based on the Hall effect, is disclosed. The device includes a magnetic patch which stores data in the form of a magnetic field, a semiconductor Hall bar and a pair of integrally-formed bipolar transistors used for amplifying and buffering the Hall voltage produced along the Hall bar. Current is forced to flow down the length of the Hall bar causing a Hall voltage to be developed in a direction transverse to the direction of both the magnetic field and the current. The bases of the bipolar transistors are ohmically coupled to the Hall bar to sense the Hall voltage--the polarity of which is representative of the stored information. A system of current carrying conductors is employed for writing data to individual magnetic patches.

Abstract: A sheet random access memory (SHRAM) is a truly random access, nonvolatile and transportable memory characterized by the cell density, size and power requirements of smaller dynamic memories but having the nonvolatile character of core memories or magnetic disks and tape and the rugged transportability of magnetic disk and tape. The SHRAM is characterized by a memory media comprising a two dimensional magnetic substrate and a fixed driving device for writing and reading into the substrate and a fixed sensing device for sensing the information at each cell location. In one embodiment the fixed sensing device is a sensing line in close proximity to a cell location. In a second embodiment, a fixed sensing device includes a Hall effect device which senses the magnetic configuration of the cell. In a third embodiment, the fixed sensing device includes an SCS thyristor in which the cathode gate is coupled to the magnetic configuration of the cell.

Abstract: A Hall detector for magnetic bubbles is characterized by an apertured detection area designed to detect only the return field of the bubble. A series arrangement of the detectors is designed to mate with a bubble expander for detecting a strip domain for detecting the return field associated with a strip domain.

Abstract: Disclosed is a displacement sensor, comprising a pair of plates of magnetic bubble material disposed parallelly to each other across a space and a galvanomagnetic element disposed within the magnetic field formed in the aforementioned space and adapted to be allowed to move parallelly to the inner surfaces of the aforementioned pair of plates. The sensor thus constructed detects displacement or vibration with the galvanomagnetic element retained in a non-contact relation with the pair of plates on the principle that the output signal from the galvanomagnetic element varies in proportion to the amount of movement of this element in the space in response to displacement or vibration.

Abstract: Single wall domains are moved synchronously in a sheet of magnetic material along channels defined by magnetically soft overlays as an in-plane magnetic field reorients. A detector is described which includes as an integral part thereof a portion of the overlay defining the propagation channels.