Abstract: Apparatuses, a method, and a system for a non-volatile, probe-based memory device are disclosed herein. In various embodiments, probe-based memory may be one-time programmable or rewritable nonvolatile probe-based memory.

Abstract: An information reproducing apparatus and a method using a semiconductor probe are provided. The information reproducing apparatus includes a semiconductor probe including a semiconductor tip including a channel varying with an electric field generated by an information recording medium; a modulator applying a high frequency modulation signal to the semiconductor probe to form a modulation electric field so as to modulate an information signal induced by the electric field; a signal detector detecting a signal generated by the semiconductor probe; and a demodulator extracting the information signal modulated by the modulation electric field from the signal detected by the signal detector.

Abstract: A signal processing circuit is provided with a signal input layer having a plurality of signal input sections which receive signal input; a plurality of signal processing layers whereupon a plurality of signal processing sections, which are arranged corresponding to each of the signal input sections and processes in parallel signals from the signal input sections, are dispersed; and connecting lines for associating and connecting the signal input sections with the signal processing sections, respectively. The size of a region occupied by each of the signal processing sections on the signal processing layers is larger than the arrangement intervals between the signal input sections on the signal input layers.

Abstract: According to embodiments of the present invention, a probe storage medium includes a conductive layer as an electrode and a metal, metalloid, and/or non-metal doped diamond-like carbon (DLC) layer disposed on the conductive layer. A probe array may be positioned close proximity with the layer of doped DLC. An individual probe in the probe array may have an atomic force microscope tip. The probe storage medium may be written to by applying a current, voltage, and/or power to the tip between a thresholds current, voltage, and/or power value and a limiting current, voltage, and/or power value. The current, voltage, and/or power cause the layer of DLC to change conductance. The probe storage medium may be read by applying a current, voltage, and/or power to the tip below a threshold current, voltage, and/or power value and sensing the conductance.

Abstract: Provided is a ferroelectric recording medium including a ferroelectric recording layer formed of a polarization reversal ferroelectric material and an anisotropic conduction layer that covers the ferroelectric recording layer and changes into a conductor or a non-conductor based on external energy.

Abstract: An approach is presented for designing a polymeric layer for nanometer scale thermo-mechanical storage devices. Cross-linked polyaryletherketone polymers are used as the recording layers in atomic force data storage devices, giving significantly improved performance when compared to previously reported cross-linked and linear polymers. The cross-linking of the polyaryletherketone polymers may be tuned to match thermal and force parameters required in read-write-erase cycles.

Abstract: The data recording device comprises a network of carbon nanotubes formed on a flat substrate and constituting microtips operating in conjunction with a substantially flat storage medium. The carbon nanotubes are initially inclined by a predetermined angle comprised between 5° and 40° with respect to the plane of the substrate. The nanotubes flex when they come into contact with the storage medium, parallel to the substrate. The substrate preferably comprises a raised structure designed to act as support for the free ends of the nanotubes to bear on.

Abstract: MEMS storage devices and associated systems and structures are generally described. In one example, a micro-electro-mechanical (MEMS) storage device includes a substrate, a lateral actuation structure coupled with the substrate, a micro-electro-mechanical (MEMS) probe coupled with the lateral actuation structure, the MEMS probe having a first end, a second end having a probe tip, and a longitudinal axis extending between the first end and the second end, wherein the second end can be actuated in a direction substantially normal to a surface of the substrate, and one or more stop beam structures coupled with the lateral actuation structure to restrict motion of the MEMS probe in the direction substantially normal to the surface of the substrate.

Abstract: A movable terminal in a two terminal memory array. A storage medium is disposed between two terminals, one of the terminals being movable relative to the second terminal. Either one of the terminals or both terminals might actually move, resulting in one terminal being moved relative to the other terminal. A memory element disposed between the two terminals has a conductance that is responsive to a write voltage across the electrodes.

Abstract: The invention concerns a data recording device comprising a two-dimensional array of microtips (3), whereof the apex is generally of nanometric dimensions arranged opposite a storage medium consisting of a flexible diaphragm (2) borne by a frame (1) forming a plurality of cells. At least one microtip (3) is associated with each cell. Said device enables the dispersion in the height of the microtip to be compensated. In order to eliminate edge effects, the flexible diaphragm (2) may include first and second elementary diaphragms, separated by a network of spacer elements, laterally offset relative to the frame. In an alternative embodiment, an array of flexible plates, separated from the diaphragm by a two-dimensional array of spacer studs, may be used for subdividing each large-size cell into a plurality of elementary cells, each associated with at least one microtip.

Abstract: A method for writing data to and/or reading data from locations on a surface via a tip comprises moving the tip between the locations on the surface. At each location, energy is selectively applied to the surface via the tip and the tip and the surface are selectively forced together in synchronization with the application of energy.

Abstract: Provided herein are embodiments for adjusting a built-in bias of a media including a conductive layer and a ferroelectric layer above the conductive layer. In certain embodiments, a voltage signal is applied between the conductive layer of the media and an electrode (provided over at least a portion of the ferroelectric layer) to thereby tune the built-in bias so that the built-in bias moves in a direction of (i.e., towards) the desired built-in bias. In other embodiments, the temperature of the at least a portion of the ferroelectric layer of the media is elevated to thereby tune the built-in bias so that the built-in bias moves in a direction of (i.e., towards) the desired built-in bias. The desired built-in bias can be a zero built-in bias, or a non-zero built-in bias.

Abstract: An apparatus for detecting a probe position error includes a position error extracting unit extracting probe position errors from signals detected by a probe; a position error adding unit calculating the probe position errors in units of a predetermined time; and a signal processing unit storing a past probe position error calculated by the position error extracting unit and generating a probe position error by processing the past probe position error and a current probe position error. An apparatus for tracking data includes a scanner moving a data storage medium; a probe detecting the signals from a data storage medium; an error detector detecting probe position errors in a half-period of an error extracting signal by applying the error extracting signal used to extract the probe position errors to the signal detected by the probe; and a compensator compensating for the probe position errors detected by the error detector.

Abstract: A scanning probe apparatus for obtaining information of a sample, recording information in the sample, or processing the sample with relative movement between the sample and the apparatus, the apparatus is constituted by a probe; and a scanning stage including a drive element for moving a sample holding table for holding the sample and a movable portion movable in a direction in which an inertial force generated during movement of the sample holding table is cancelled. The scanning stage further includes a drive circuit for driving the scanning stage and is detachably or replaceably mountable to a main assembly of the apparatus.

Abstract: Provided are a resistive memory device having a probe array and a method of manufacturing the same. The resistive memory device includes a memory part having a bottom electrode and a ferroelectric layer sequentially formed on a first substrate; a probe part having an array of resistive probes arranged on a second substrate, with the tips of the resistive probes facing the ferroelectric layer so as to write and read data on the ferroelectric layer; and a binding layer which grabs and fixes the resistive probes on or above the ferroelectric layer. The method of manufacturing the resistive memory device includes forming a bottom electrode and a ferroelectric layer sequentially on a first substrate; forming an array of resistive probes on a second substrate; and wafer level bonding the first substrate to the second substrate using a binding layer such that tips of the resistive probes face the ferroelectric layer.

Abstract: A system and method of reducing spin pumping induced damping of a free layer of a memory device is disclosed. The memory device includes an anti-ferromagnetic material (AFM) pinning layer in contact with a bit line access electrode. The memory device also includes a pinned layer in contact with the AFM pinning layer, a tunnel barrier layer in contact with the pinned layer, and a free layer in contact with the tunnel barrier layer. The memory device includes a spin torque enhancing layer in contact with the free layer and in contact with an access transistor electrode. The spin torque enhancing layer is configured to substantially reduce spin pumping induced damping of the free layer.

Abstract: A method for writing data to and/or reading data from locations on a surface via a tip comprises moving the tip between the locations on the surface. At each location, energy is selectively applied to the surface via the tip and the tip and the surface are selectively forced together in synchronization with the application of energy.

Abstract: For providing a recording/reproducing apparatus, for recording/reproducing information through conduction of electricity upon contact of a probe, having large recording density and a large transfer speed, but less in deterioration of a probe chips thereof, and being long in the lifetime thereof, within the recording/reproducing apparatus, a multi-chip is formed, disposing probe chips in large numbers thereof at a tip of a cantilever, while the cantilever is of a double-sided beam type, and the multi-chip is disposed at a center of the beam, wherein recording/reproducing portions of the multi-chip are disposed to correspond to recording dots one by one, and the multi-chip forming surface is moved up and down in parallel with the surface of a recording medium, due to suction force, so as to bring it to be in contact with the recording dots, and electricity is conducted after the contact thereof, thereby conducting the recording, in the structure; wherein, since a large amount of data can be read/written at one

Abstract: The present invention provides data storage devices, systems and methods. An example device includes: a storage medium for storing data in the form of marks; and at least one probe. The probe(s) and storage medium are operable to move relative to each other, with each probe comprising a tip facing the storage medium and having a force creating unit associated thereto. The force creating units are operable to create a force acting between the tip and said storage medium. The data storage device is operable to erase an indentation mark in the storage medium by way of controlling the force creating unit for creating at least one erase force pulse with a force rise time being less than or equal to the order of 1 microsecond.

Abstract: A method of writing to ferroelectric storage medium includes the steps of applying a first write voltage to a ferroelectric layer for writing a first bit in a first polarization direction and applying a second write voltage to the ferroelectric layer for writing a second bit in a second polarization direction opposing the first polarization direction. The first write voltage having a first magnitude, and the second write voltage having a second magnitude being greater than the first magnitude. The ferroelectric layer having a ferroelectric imprint polarization direction, and the first polarization direction being substantially the same as the ferroelectric imprint polarization direction. The ferroelectric medium contains first bits with a first surface area that is substantially equal to second bits surface area. A probe storage apparatus can use this method and ferroelectric medium.

Abstract: A probe (100) is provided with: a substrate (110) having a surface facing a medium (20); and a point electrode (120), formed in the substrate, for performing at least one of detection operation of a state of a domain of the medium and change operation of the state of the domain of the medium, a tip portion, which is an edge portion on a side facing the medium, out of the point electrode being disposed in one point in a plane which is formed in a vicinity of an area portion in which the point electrode is formed by the surface.

Abstract: A recording/reproducing apparatus (100) is provided with: a first substrate (41) on which a recording medium (43) is mounted; and a second substrate (21) to which a recording/reproducing head (23), which performs information recording and information reproduction on the recording/reproducing medium is fixed, wherein the second substrate is relatively displaced in a predetermined direction substantially parallel to the first substrate with respect to the first substrate, a particulate (30) is placed in a gap between the first substrate and the second substrate, the particulate can be displaced with displacement of the second substrate, the particulate has a substantially circular cross section in a direction that the second substrate is displaced when the second substrate is displaced.

Abstract: An information storage device comprises a media including a ferroelectric layer formed over a conductive layer, a tip substrate including a bottom actuation electrode, the tip substrate arranged opposite the media, and a cantilever connected with the tip substrate at a fulcrum and actuatable toward the media. The cantilever includes a first portion and a second portion, with the fulcrum located between the first portion and the second portion. The first portion is conductive and arranged over the bottom actuation electrode while a top actuation electrode is associated with the second portion so that the top actuation electrode is opposite the media. A first potential is applied to the bottom actuation electrode to generate electrostatic force between the bottom actuation electrode and the first portion and a second potential is applied to the top actuation electrode to generate electrostatic force between the top actuation electrode and the conductive layer.

Abstract: A probe for a data storage apparatus. The probe includes a coating layer formed on a tip of the probe, wherein a peak of the tip is exposed and the coating layer and the peak form a predetermined contact area with respect to a recording medium. In addition, the probe may also include an insulating layer formed between the coating layer and the tip of the probe. The coating layer, the insulating layer, and the peak of the tip have a predetermined contact area with respect to the recording medium. Consequently, the probe can obtain high resolving ability by using a sharp-type tip and simultaneously can reduce the degree of abrasion of the peak of the tip, thereby resulting in an excellent durability.

Abstract: Provided are a ferroelectric recording medium and a method of manufacturing the same. The ferroelectric recording medium includes a substrate, a plurality of supporting layers which are formed on the substrate, each of the supporting layers having at least two lateral surfaces; and data recording layers formed on the lateral surfaces of the supporting layers. First and second data recording layers may be respectively disposed on two facing lateral surfaces of each of the supporting layers. The supporting layers may be polygonal pillars having at least three lateral surfaces. A plurality of the supporting layers can be disposed at uniform intervals in a two-dimensional array.

Abstract: An electric field read/write head, a method of manufacturing the same, and a data read/write device including the electric field read/write head are provided. The data read/write device includes an electric field read/write head which reads and writes data to and from a recording medium. The electric field read/write head includes a semiconductor substrate, a resistance region, source and drain regions, and a write electrode. The semiconductor substrate includes a first surface and a second surface with adjoining edges. The resistance region is formed to extend from a central portion at one end of the first surface to the second surface. The source region and the drain region are formed at either side of the resistance region and are separated from the first surface. The write electrode is formed on the resistance region with an insulating layer interposed between the write electrode and the resistance region.

Abstract: Provided is a data storing and reading apparatus for storing and reading data using a nano device with nano-dots dots regularly arranged, comprising a probe movable by a cantilever so as to be placed onto each nano-dot of the nano device, a bias power supply unit for supplying a storing bias voltage and a reading bias voltage between the probe and the nano device, a light beam generator for generating a light beam to detect a position of the probe, a position detector for detecting the light beam reflected from the probe, an amplifier for amplifying an output signal of the position detector, and a detection circuit for reading data stored in the nano-dot using an output signal of the amplifier.

Abstract: A nano data writing and reading apparatus using a cantilever structure includes a cantilever formed by patterning a deposition material deposited on a sacrificial substrate, a probe formed at a front end portion of one surface of the cantilever and formed simultaneously with the cantilever as the deposition material is filled in a probe groove pattern formed on the sacrificial substrate when the deposition material is deposited on the sacrificial substrate, a heater formed of polycrystalline silicon at the cantilever, for heating the probe, a data sensing unit formed at the cantilever and sensing data written on media, a signal connection pad connected to the data sensing unit and formed at the cantilever to provide an electrical connection with an external signal line, a signal transfer circuit unit connected to the signal connection pad, for controlling writing and reading of data on and from the media, and a bonding unit allowing the cantilever to be supported at the signal transfer circuit unit and provid

Abstract: An information recording/reproducing device is provided with a recording medium with a recording surface, a plurality of probes that carry out at least either record processing or reproduction processing by scanning a plurality of information tracks on the recording surface, a position detecting means that detects a position of at least one information track by using the probe for every plural divided regions into which the recording medium is divided in a direction intersecting the plural information tracks and which contain at least one information track, and a track control means that controls tracking of the probe used for at least either record processing or reproduction processing for every plural divided regions. Thus, the device structure can be simplified.

Abstract: An information recording/reproducing device according to an aspect of the present invention includes a recording layer, and a recording circuit which records data to the recording layer by generating a phase change in the recording layer. The recording layer includes a first chemical compound having one of a Wolframite structure and a Scheelite structure.

Abstract: A method and apparatus for overwriting data in a probe-based data storage device wherein data is represented by the presence and absence of pits formed in a storage surface by a probe of the device is provided. Input data is first coded such that successive bits of a given value x in the coded input data (b0, b1, b2, . . . ,) are separated by at least d bits of the complementary value {tilde over (x)}, where d is a predetermined number?2. Overwrite data bits (v0, v1, v2, . . . ,) are then generated by encoding the coded input data bits (b0, b1, b2, . . . ,).

Abstract: A media for storing information comprises a substrate, a conductive layer formed over the substrate, and a ferroelectric layer epitaxially formed on the conductive layer. The ferroelectric layer includes an a-lattice constant that is substantially matched to an a-lattice constant of the conductive layer and an average c-lattice constant that is longer than an average c-lattice constant of a bulk-grown ferroelectric layer.

Abstract: A data storage medium includes a piezoelectric film (101) having a surface (111) including a halogen. In one embodiment, the halogen exists in an atomic concentration of at least approximately 10 percent. The result is a hydrophobic surface conducive to long-lasting scanning probe tips, low contamination, and stable surface charge. A data storage device incorporating the data storage medium includes an enclosure (205) containing the data storage medium and an adjacent scanning probe (230) wherein the enclosure has a relative humidity of at least approximately 40 percent and at least a portion of the scanning probe is coated with a layer of water.

Abstract: Provided are an electric field read/write apparatus and method, which reproduce information written in a recording medium by using an electric field read/write head including a channel. In the electric field read/write apparatus and method, an electric field generated from the recording medium is modulated by using a modulation signal, a variation in the modulated electric field is detected, and a voltage signal determined according to the detected variation is demodulated and information written in the recording medium is determined according to a result of the demodulation.

Abstract: A method and structure for a ferroelectric storage medium, includes a metallic underlayer and a ferroelectric data layer over the metallic underlayer. A layer over the ferroelectric data layer has a charge migration rate faster than a charge migration rate of the ferroelectric data layer.

Abstract: The optical information recording medium according to the present invention includes a transparent substrate having a first surface and a second surface, a recording layer that is arranged on the first surface of the transparent substrate, and a reflection layer arranged on the second surface of the transparent substrate. A hologram is recorded in the recording layer when a signal light and a reference light are incident from an incident side opposite to the transparent substrate. An optical density of the recording layer corresponding to the signal light decreases from the incident side toward the transparent substrate.

Abstract: A media for an information storage device includes a substrate of single-crystal silicon, a buffer layer of an epitaxial single crystal insulator formed over the substrate, a bottom electrode layer of an epitaxial single crystal conductor formed over the buffer layer, a ferroelectric layer of an epitaxial single crystal ferroelectric material formed over the bottom electrode layer, and an overlayer of an epitaxial single crystal material formed over the ferroelectric layer. Dipole charges generally having a first orientation exist at an interface between the bottom electrode layer and the ferroelectric layer includes, while dipole charges generally having a second orientation opposite the first orientation exist at an interface between the ferroelectric layer and the overlayer includes.

Abstract: An electric field head includes a body portion and a read head having a channel layer provided on an air bearing surface (ABS) of the body portion facing a recording medium and a source and a drain contacting both ends of the channel layer. The electric field head is manufactured by defining a head forming portion of a substrate, separating the head forming portion from the substrate, forming an ABS pattern on a side surface of the separated head forming portion, and forming a channel layer for a read head on a surface of the head forming portion where the ABS pattern is formed. An information storage device includes a ferroelectric recording medium and the electric field head.

Abstract: Method for employing optical state-change organic polymer films as information-storage layers in optoelectronic, high-density memories, and high-density optoelectronic memories produced by the method. In certain embodiments, the optical state-change organic polymer films can be manufactured to exhibit two different, stable optical states, one transparent, and one light-absorbing and/or light-reflecting, that can be locally, stably, and reversibly induced by application of an electrical field. In various embodiments, information is digitally encoded in an information-storage layer as bits, the value of each bit represented by the optical state of an area of the information-storage layer corresponding to the bit.

Abstract: A passive stylus for capacitive sensors comprises a tip and a shaft. The tip is configured to couple electrically with a capacitive sensing device and to couple physically and electrically with the stylus shaft. The tip comprises a contact surface, a support region, and a flexible region. The contact surface is configured to contact a device surface associated with the capacitive sensing device. The flexible region is disposed between the contact surface and the support region. The flexible region comprises a hardness gradient. The support region is configured to provide structural support to the flexible region.

Abstract: Spin torque magnetic memory elements that have a pinned layer, two free layers, and a current-blocking insulating layer proximate to at least one of the free layers. The resistive state (e.g., low resistance or high resistance) of the memory elements is altered by passing electric current through the element in one direction. In other words, to change from a low resistance to a high resistance, the direction of electric current is the same as to change from a high resistance to a low resistance. The elements have a unidirectional write scheme.

Abstract: A magnetic device includes a write element including a write element tip, and a conductive coil for carrying a write current to induce a first field in the write element. A first conductor proximate a trailing edge of the write pole tip is operable to carry a first assist current to generate a second field that augments the first field. A second conductor proximate a leading edge of the write pole tip is operable to carry a second assist current to generate a third field that augments the first field. First and second side shields are on opposing sides of the write element in a cross-track direction.

Abstract: A vibration-type cantilever holder holds a cantilever opposed to a sample. The holder supports a main body part of the cantilever at only its base end so that a probe at the free end of the cantilever can contact the sample. The holder has a cantilever-attaching stand on which the main body part is placed and fastened such that the cantilever is tilted at a predetermined angle with respect to the sample. A first vibration source is fastened to the cantilever-attaching stand and vibrates with a phase and an amplitude depending on a predetermined waveform signal, and the first vibration source is fastened at a first location to a holder main body. A second vibration source is fastened at a second location, which is spaced from the first location, to the holder main body and generates vibrations to offset vibrations traveling from the first vibration source to the cantilever-attaching stand and holder main body.

Abstract: This invention provides an information processing method and apparatus, which can set all extent sizes of data divisionally recorded on a disk to be equal to or larger than the minimum recording unit, and can guarantee continuous reproduction of the divisionally recorded data. Of data divisionally recorded on a recording medium (5), data which corresponds to an end portion of that data and cannot be recorded as a recording area equal to or larger than a minimum recording unit specified in the recording medium (5) due to the presence of a recording area (6) of another data, that has already been recorded on the recording medium (5), is re-recorded on a recording area equal to or larger than the minimum recording unit. At this time, new data is generated by combining data less than the minimum recording unit, and data recorded in another recording area, and the new data is re-recorded on a new recording area.

Abstract: A data recording apparatus includes a recording medium which includes a semiconductor substrate, a first insulating layer formed on one surface of the substrate, a second insulating layer formed on the first insulating layer and is made to accumulate electric charge, an electrode layer formed on the other surface, and an insulating area which penetrates the insulating layers; and an electrode which applies a voltage to the medium. A depth from an interface between the substrate and the first insulating layer to the bottom of the insulating area is more than a maximum depth of a depletion layer, Wmax represented by Wmax=?{square root over (2?0?i×2|?f|/qNd)} where ?0, ?i, |?f|, q, and Nd are a dielectric constant of vacuum, a relative dielectric constant, an absolute value of the Felmi potential of the substrate, an electric charge of an electron, and an impurity concentration of the substrate, respectively.

Abstract: A probe (100) is provided with: a support member having a through-hole in at least one portion thereof; a projection standing on the support member with its tip facing a medium; and a conductive film formed to cover at least a partial surface of the support member including a side surface of the through-hole.

Abstract: A signal processing circuit is provided with a signal input layer having a plurality of signal input sections which receive signal input; a plurality of signal processing layers whereupon a plurality of signal processing sections, which are arranged corresponding to each of the signal input sections and processes in parallel signals from the signal input sections, are dispersed; and connecting lines for associating and connecting the signal input sections with the signal processing sections, respectively. The size of a region occupied by each of the signal processing sections on the signal processing layers is larger than the arrangement intervals between the signal input sections on the signal input layers.

Abstract: An apparatus includes a storage media having a surface coated with a lubricant, and a plurality of probes having tips contacting the lubricant, wherein the probes are coated with one of a fluorocarbon, perfluoropolyether, polytetrafluoroethylene, fluorinated ethylene propylene, polyethylene, or a hydrocarbon polymer.

Abstract: A recording medium including a ferroelectric layer, a nonvolatile memory device including the recording medium and methods of wiring and reading data in the memory device. The recording medium includes: a lower electrode; a ferroelectric layer to which data is recorded, formed on the lower electrode; a barrier layer formed on the ferroelectric layer; and a semiconductor layer formed on the barrier layer. The nonvolatile memory device includes a probe that reads and writes the data. Furthermore, in the method of writing data, a writing voltage is applied between the probe, which contacts the semiconductor layer, and the lower electrode and, in the method of reading data, a state of a remanent polarization of the ferroelectric layer is determined by applying a reading voltage between the probe and the semiconductor layer.

Abstract: Methods and associated structures of forming a microelectronic device are described. Those methods may comprise forming a conductive layer on a single crystal ferroelectric material, patterning the conductive layer to form contacts, attaching a portion of a circuit on the patterned conductive layer, lapping the single crystal ferroelectric material to a thickness of about 1 to about 10 microns and then etching the single crystal to a thickness below about 25 nm.