Abstract: Provided are a resistive memory device having a probe array and a method of manufacturing the same. The resistive memory device includes a memory part having a bottom electrode and a ferroelectric layer sequentially formed on a first substrate; a probe part having an array of resistive probes arranged on a second substrate, with the tips of the resistive probes facing the ferroelectric layer so as to write and read data on the ferroelectric layer; and a binding layer which grabs and fixes the resistive probes on or above the ferroelectric layer. The method of manufacturing the resistive memory device includes forming a bottom electrode and a ferroelectric layer sequentially on a first substrate; forming an array of resistive probes on a second substrate; and wafer level bonding the first substrate to the second substrate using a binding layer such that tips of the resistive probes face the ferroelectric layer.

Abstract: A method of assembling arrays of small particles or molecules using an atomic force microscope to define ferroelectric domains includes depositing a ferroelectric thin film upon a substrate forming workpiece, then using an atomic force microscope having a conductive, tip for generating a pattern on this thin film to define desired nano-circuit patterns. Next, exposure of this thin film to a solution containing chemical species which selectively adsorb or accumulate under the influence of electrophoretic forces in selected regions of this thin film.

Abstract: An electrostatic protection network is disclosed that may be employed in a disk drive having a magneto-resistive read element. The network comprises a ground; and an array that block a signal current flow between the read element and the ground while a signal voltage is below a predetermined value and conducts the signal current from the read element to the ground while the signal voltage is above the predetermined value. The array is formed of a N-channel and P-channel junction field effect transistors. Thus, electrostatic discharge events are dissipated through the network to diminish damage to the read element during an ESD event.

Abstract: Superconducting-semiconducting hybrid memories are disclosed. These superconducting-semiconducting hybrid memories utilize semiconductor circuits to store information, and either superconducting or semiconducting or combinations of superconducting and semiconducting circuits, with at least some superconducting circuitry used, to write and read information. The state of memory cells in the hybrid memories is determined by utilizing superconductor current sensing schemes to detect currents in the bit-line, thereby avoiding any bit-line charging delays and other problems associated with purely semiconductor memories. Additional features of the superconducting-semiconducting hybrid memories include wide margins, dense packing of memory cells, low power dissipation and fast access times. Interface curcuitry for converting superconducting signals to signals compatible with semiconductor circuits and for converting semiconductor signals to signals compatible with superconducting circuits is also disclosed.

Abstract: A method for preparing a material so as to exhibit second harmonic generation for optical radiation that passes through the material. The method includes a first step of providing a bulk glass comprised of substitutionally doped silica and a charge transfer dopant. The bulk glass is prepared for frequency doubling in accordance with a method that includes a step of irradiating the bulk glass with optical radiation having a first wavelength and a second wavelength, the bulk glass being irradiated for a period of time sufficient to obtain a desired amount of conversion efficiency of the first wavelength into the second wavelength. The silica is substitutionally doped with an element selected from the group consisting of Ge and Al, and the charge transfer dopant is selected from the group consisting of Ce.sup.3+, Nd.sup.3+, and Eu.sup.2+. In another embodiment of the invention the silica is substitutionally doped with Ge and the charge transfer dopant is comprised of naturally existing Ge defects.

Abstract: In a moving coil pickup cartridge of a stereophonic type having a magnetic circuit consisting of a permanent magnet, a plate and a yoke, left and right air gaps formed in the magnetic circuit, and left and right pickup coils disposed in the air gaps, respectively, the cartridge including left and right pole pieces formed in the magnetic circuit for providing cone-shape magnetic fluxes on each of the air gaps so as to cross the left and right pickup coils. respectively. Stylus exchanging mechanism is also disclosed.