Abstract: A tone arm for a record player is provided. The tone arm comprises an anterior arm section adapted for mounting a pickup cartridge thereto, an posterior arm section adapted for mounting to the record player, and a mounting component comprising a plurality of discrete contact surfaces that adapted for abutting one of i) anterior arm section and ii) the posterior arm section, and preferably discrete contact surfaces for each of the anterior arm section and the posterior arm section. Whereby, the mounting component is adapted to secure the anterior arm section and the posterior arm section to each other. Therefore, through the present document is described the mounting component, the tone arm, and a method of making the latter with the mounting component.
Abstract: Disclosed are techniques for wireless communication. In an aspect, a user equipment (UE) receives, from a base station, before a next paging occasion (PO) of a paging cycle, a page indication (PI) in a first PI location associated with the next PO, wherein the PI comprises at least one repetition of a plurality of repetitions of the PI transmitted in the first PI location on each of a plurality of beams, and decodes the PI to determine whether or not the UE is paged in the next PO.
Type:
Grant
Filed:
October 18, 2021
Date of Patent:
October 8, 2024
Assignee:
QUALCOMM Incorporated
Inventors:
Huilin Xu, Yuchul Kim, Wanshi Chen, Peter Gaal, Ozcan Ozturk, Jing Lei, Hwan Joon Kwon, Peter Pui Lok Ang, Krishna Kiran Mukkavilli, Tingfang Ji
Abstract: A phase change memory (PCM) cell comprising a substrate a first electrode located on the substrate. A phase change material layer located adjacent to the first electrode, wherein a first side of the phase change material layer is in direct contact with the first electrode. A second electrode located adjacent to phase change material layer, wherein the second electrode is in direct contact with a second side of the phase change material layer, wherein the first side and the second side are different sides of the phase change material layer. An airgap is located directly above the phase change material layer, wherein the airgap provides space for the phase change material to expand or restrict.
Type:
Grant
Filed:
June 9, 2021
Date of Patent:
June 27, 2023
Assignee:
International Business Machines Corporation
Inventors:
Kangguo Cheng, Ruilong Xie, Carl Radens, Juntao Li
Abstract: A memory cell includes a first electrode, a second electrode, and phase change material contacting the first electrode and the second electrode. The phase change material has a step-like programming characteristic. The first electrode, the second electrode, and the phase change material form a planar or bridge phase change memory cell.