Abstract: A laser polarization control apparatus includes a polarization modifying device and a controller. The polarization modifying device receives a laser beam and modifies the polarization of the laser beam. The controller adjusts an input to the polarization modifying device in order to control modification of the polarization of the laser beam based on alignment of a structure to be processed by the laser beam. The polarization modifying device is configured for incorporation into a laser processing system that produces the laser beam received by the polarization modifying device and that focuses the laser beam modified by the polarization modifying device onto a workpiece that includes the structure to be processed by the laser beam. An analyzer tool receives the laser beam modified by the polarization modification device and measures the modification of the polarization of the laser beam by the polarization modification device.

Abstract: A laser light intensity controller includes a polarizing beam splitter for passing most of one of an x-direction polarization component perpendicular to a direction in which a laser beam emitted from a light source travels and a y-direction polarization component parallel with the traveling direction and for reflecting a little portion of the one polarization component as monitoring light, and a photodetector for receiving the reflected monitoring light to generate a light intensity signal. The controller drives the light source in accordance with the light intensity signal. An optical element which passes passing only the one polarization component is installed between the light source and the polarizing beam splitter.

Abstract: A laser light intensity controller includes a polarizing beam splitter for passing most of one of an x-direction polarization component perpendicular to a direction in which a laser beam emitted from a light source travels and a y-direction polarization component parallel with the traveling direction and for reflecting a little portion of the one polarization component as monitoring light, and a photodetector for receiving the reflected monitoring light to generate a light intensity signal. The controller drives the light source in accordance with the light intensity signal. The photodetector reflects the other of the x-direction polarization component and the y-direction polarization component and is not sensitive thereto, and absorbs the one polarization component and is sensitive thereto.

Abstract: A subassembly for a high powered light pumped, Q-switched and linearly polarized laser with an optical parametric oscillator, the subassembly consisting of two or three rod shaped elements having precisely ground endfaces with selected coatings mounted on a special pallet that at least partially aligns the optical axes of the elements.

Abstract: An apparatus for generating plural pulse light beams includes a polarization maintaining fiber operating as a plural pulse light generating device. When a short pulse light beam is launched into the polarization maintaining fiber from a fiber laser source, two polarized components of the light beam are generated in the polarization maintaining fiber and perpendicularly intersect each other. Then, the resulting induced Raman Effect and Soliton Effect relative to each polarized component of the light causes a soliton pulse having a wavelength longer than the corresponding component.

Abstract: The invention is a frequency stabilized passive Q-switch laser, which has the advantages of small volume, simple structure, no need for high power voltage, etc. It has been a long time that timing jitter in conventional lasers is so large that they can not be applied to fields such as distance measurement. This invention utilizes an optical external modulation method to stabilize the repetition rate of the passive Q-switch, and thus to decrease its timing jitter. At the same time, the repetition rate of the Q-switch laser can be controlled by the same technology to meet various application needs.

Abstract: A light source for an exposure device associated with an optical lithographic system is disclosed. The light source includes a structural body having slots for receiving a plurality of laser elements. The laser elements are modular. Thus, they can be removed and installed separately, which facilitates ease of maintenance. The laser elements have a semiconductor laser that pumps a solid-state laser that is subjected to nonlinear optical crystals that convert the laser beam to smaller wavelength light to produce polarized UV laser light for use in optical lithography. The laser light from each laser element is linearly polarized. The laser elements are located in the structural body in different orientations so as to orient their respective directions of polarization different from each other so as to prevent dissimilar line widths of linear features of lithographically produced substrates that use laser light sources.

Abstract: A Q-switched neodymium laser may be operated in the 0.9 &mgr;m [( &lgr;1)] band at relatively high gain levels. The laser uses a birefringent filter which provides selective discrimination for wavelengths near 1 &mgr;m [(&lgr;2)] and prevents parasitic lasing in that wavelength region. The filter includes a specific wavelength dependent crystal quartz wave plate in combination with a linear polarizer. The linear polarizer is placed between two mirrors which define a laser cavity. The wave plate provides exactly 2 full waves of retardation at the desired wavelength &lgr;1 in the 0.9 &mgr;m band, and exactly 1.75 waves of retardation at wavelength &lgr;2 near the center of the 1 &mgr;m band for one pass. A Q-switching device such as a Pockels cell is positioned in the laser cavity to selectively control a pulsed emission at &lgr;1.

Abstract: A thermal birefringence compensator for a double pass laser system, which includes a polarization or conventionally outcoupled laser resonator, a gain medium and a compensator optically coupled to the gain medium. In one implementation, the compensator, which acts as an end reflector, includes a Benson prism, a first quarter waveplate with its principle axes aligned to the fold axis of the Benson prism, and a second quarter waveplate with its principle axes at 45° to the fold axis of the Benson prism. Alternatively, the compensation's prism can be a Porro prism.

Abstract: In a laser apparatus, when no voltage is applied to optical modulator, a first linearly polarized component of a laser beam which passes through a polarization control mirror causes a laser oscillation in a first laser resonator and a laser beam is output from a second reflecting mirror. When a pulsed voltage is applied to the optical modulator, a second linearly polarized component of the laser beam reflected by the polarization control mirror passes through the optical modulation means and causes a Q-switched laser oscillation in a second laser resonator. In this case, the first linearly polarized component passes through the polarization control mirror and is output from the second reflecting mirror. This technique makes it possible to combine a Q-switched laser apparatus with a non-Q-switched laser apparatus without causing the power of the laser beam to exceed a maximum allowable limit that an electrooptical modulator can handle.

Abstract: The present invention provides a solid-state laser device in which an alignment operation for arranging optical elements for compensating thermal birefringence is easy, and which is mechanically highly stable by being tolerant of oscillation.

Abstract: Disclosed herein is a method for wavelength conversion. In this method, an optical signal received is separated into a first polarization component having a first polarization plane and a second polarization component having a second polarization plane perpendicular to the first polarization plane. The first polarization component is supplied to a first optical waveguide structure over which a first surface acoustic wave propagates, in a direction identical with the propagation direction of the first surface acoustic wave. The second polarization component is supplied to a second optical waveguide structure over which a second surface acoustic wave propagates, in a direction opposite to the propagation direction of the second surface acoustic wave. First converted light output from the first optical waveguide structure and second converted light output from the second optical waveguide structure are combined together.

Abstract: An optical fiber polarization controller which has compact size by employing wave plates made of short sections of a first optical fiber having inherent birefringence such as a polarization maintaining optical fiber. In the control of the polarization state of input light, a second optical fiber, for example a single mode fiber, connected to the first optical fiber is twisted using fixing knobs, thereby rotating the birefringence axis of the first optical fiber with respect to the second optical fiber.

Abstract: A polarization-dependent type directional isolator. The polarization-dependent type directional isolator comprises a pair of first optical means positioned at a path along which light travels for changing the rotation direction of an incident light depending on the traveling direction of the incident light; a pair of second optical means for rotating the incident light by a given angle; and a third optical means positioned between the pair of second optical means for passing through only specific components of the components of the incident light, thereby making it possible to obtain laser outputs oscillating in both directions independently.

Abstract: A DFB fiber laser comprises a single-mode, rare-earth doped optical fiber having a uniform Bragg grating with a reflectivity of about 90%, and a single-mode, hi-birefringent optical fiber having a uniform Bragg grating with a reflectivity of near 100%. The output end of the hi-bi fiber is coupled to the input end of the doped fiber to form an asymmetrical fiber laser cavity. The input end of the hi-bi fiber is pumped by a light source (laser diode) having a wavelength in the absorption range of the doped fiber. Pump light entering the hi-bi fiber is passed into the doped fiber to produce a stimulated output. The hi-bi fiber provides single polarization operation, acts as an end reflector to provide single longitudinal mode operation in the laser cavity while also providing single sided output.

Abstract: A laser polarization control apparatus includes a polarization modifying device, such as a liquid crystal variable retarder, and a controller. The polarization modifying device receives a laser beam and modifies the polarization of the laser beam. The controller, which is connected to the polarization modifying device, adjusts an input to the polarization modifying device in order to control modification of the polarization of the laser beam based on alignment of a structure to be processed by the laser beam. For example, the polarization of the laser beam may be rotated to correspond with the alignment of a link in a semiconductor device to be cut by the laser beam. The polarization modifying device is configured for incorporation into a laser processing system that produces the laser beam received by the polarization modifying device and that focuses the laser beam modified by the polarization modifying device onto a workpiece that includes the structure to be processed by the laser beam.

Abstract: A laser system includes a light amplifier medium provided with an optical waveguide layer which controls the transverse mode to a fundamental transverse mode in one direction, a first resonator mirror optical system which is opposed to a first light outlet end face of the light amplifier medium and reflects a laser beam radiated from the first light outlet end face to impinge upon the first light outlet end face, and a second resonator mirror optical system which is opposed to a second light outlet end face of the light amplifier medium and reflects a laser beam radiated from the second light outlet end face to impinge upon the second light outlet end face.

Abstract: In order to control the polarization direction of laser light emitted by a vertical cavity surface emitting laser (VCSEL), the cross-sectional dimension of the p-DBR is so limited as to permit only a single fundamental transverse mode in a waveguide composed by the p-DBR. Some VCSEL-based devices are developed using arrays of VCSELs in which each VCSEL has a controlled direction of polarization.

Abstract: Optically pumped laser wherein the light beam P, which comes, for example, via light conductors 4 from the pump light source 200, is split into two component beams (T1, T2), for example, by a beam splitter 2. The two component beams (T1, T2) are directed to the laser medium 1 separately, for example, from both ends, or at an angle onto one end. Laser crystals such as Nd:YVO.sub.4, Nd:YLF, Nd:LSB or Nd:YAP having polarization-dependent absorption are especially suitable for pumping.

Abstract: In order to facilitate control of the polarization plane of a laser beam emerging from a surface-emitting-type semiconductor laser in a specific direction and to suppress occurrence of fluctuations and switching of the polarization plane depending on the optical output and the environmental temperature, a strain generating section (19) is arranged adjacent to a resonator (10B) of a semiconductor laser. The strain generating section (19) impresses anisotropic stress to the resonator (10B) to generate strain, resulting in birefringence and dependence of the gain on the polarization in the resonator (10A). This enables stabilized control of the polarization plane.

Abstract: A semiconductor device such as a light emitting semiconductor device comprising a mask layer having opening areas and a selective growing layer comprising a semiconductor grown selectively by way of the mask layer, with each of the mask layer and the selective growing layer being disposed by two or more layers alternately. The semiconductor device is manufactured by a step of laminating on a substrate a mask layer having opening areas and a selective growing layer comprising a semiconductor grown selectively way of a mask layer, each by two or more layers alternately and a subsequent step of laminating semiconductor layers thereon. Threading dislocations in the underlying layer are interrupted by the first mask layer and the second mask layer and do not propagate to the semiconductor layer. The density of the threading dislocations is lowered over the entire surface and the layer thickness can be reduced.

Abstract: According to the invention, a method and an apparatus for producing a laser beam having a preselected output frequency which has a longer wavelength than does the fundamental beam of the lasing medium is provided. In one aspect of the invention a laser resonator cavity is formed between two reflective surfaces such as mirrors. A lasing medium is located within the laser resonator cavity for generating a fundamental wavelength beam. An optical parametric oscillator cavity is also formed between one of the laser resonator cavity reflective surfaces and a third reflective surface for example a mirror. A nonlinear crystal cut for phase matching conditions for the fundamental beam wavelength and the output beam wavelength is located in optical communication with the first and the third reflective surfaces. The optical axis of the laser resonator and the optical parametric oscillator are at least partially separate and partially overlap.

Abstract: Stable operation of an ultra-compact modelocked fiber laser generating short optical pulses generally without use of any non-fiber, intra-cavity polarization-manipulating elements is obtained by employing a saturable absorber coupled to one end of a highly-birefringent fiber serving as the laser cavity. Once the laser is modelocked in one of the polarization axes of the highly-birefringent fiber, the degeneracy of the polarization axis is eliminated and cw oscillation along the other polarization axis is also prevented. Without a polarization-dependent loss in the cavity, the modelocked polarization axis is indeterminate, i.e., modelocking can occur on either of the polarization axes. However, the introduction of only a small polarization dependent loss is sufficient to ensure the reliable start-up of modelocking on only the low-loss axis.

Abstract: A unidirectionally operating laser apparatus using a semi-monolithic ring cavity having a compact structure capable of achieving a high frequency stability and a high-speed laser frequency tuning and modulation. The laser apparatus includes a laser active medium having a curved surface exhibiting an anti-reflection characteristic for a pump laser beam from a pump laser incident thereon while exhibiting a high reflection characteristic for an oscillating laser beam, a planar surface exhibiting an anti-reflection characteristic for the oscillating laser beam, and an optically-active polarization rotator attached to one side portion of the planar surface. The laser apparatus also includes an output mirror separated from the laser active medium, the output mirror having a curved surface with a coating exhibiting a higher reflectance coefficient for S-polarized beams than that for P-polarized beams, and a piezo-electric transducer.

Abstract: An optical semiconductor device has a structure in which a semiconductor active layer is sandwiched by a p-type semiconductor cladding layer and an n-type semiconductor cladding layer and a p-type contact layer is formed on the p-type semiconductor cladding layer side and an n-type contact layer is formed on the n-type semiconductor cladding layer side, wherein two ferromagnetic layers are formed on the n-type contact layer and two ferromagnetic layers are formed on the p-type contact layer. Magnetization directions of a pair of ferromagnetic layers vertically opposed to each other are set to be parallel to each other, and the magnetization directions of adjacent ferromagnetic layers are inverted to each other.

Abstract: A semiconductor optical functional device is divided into two regions of a first region 1 and a second region 2 adjacent to each other in a longitudinal direction of a semiconductor optical waveguide. The first region 1 is provided with a region including an MQW structure in which a compressive strain is introduced, and the second region 2 is provided with a region including an MQW structure in which a tensile strain is introduced. Electrodes 3 and 4 formed separately and independently from each other are respectively disposed on the first region 1 and the second region 2, and bias voltages applied to the electrodes 3 and 4 are adjusted so that transmissivities for light having a TE mode component and light having a TM mode component are independently controlled.

Abstract: A laser system which generates short duration pulses, such as under five nanoseconds at an energy level of up to a few milli-Joules per pulse (mJ/p) with near diffraction limited beam quality. A laser crystal is pumped (excited) by diode lasers. A resonator having at least two mirror surfaces defines a beam path passing through the laser crystal. The beam path in the resonator is periodically blocked by a first optical shutter permitting pump energy to build up in the laser crystal, except for a short period near the end of each pumping period. While the first optical shutter is open a second optical shutter blocks the light in the resonator except for periodic short intervals, the intervals being spaced such that at least one light pulse traveling at the speed of light in the resonator is able to make a plurality of transits through the resonator, increasing in intensity by extracting energy from the excited laser crystal on each transit.

Abstract: A single mode laser implementation and associated method are disclosed. The laser may accommodate a frequency multiplying material to provide an intracavity doubled single frequency laser. The laser implementation includes an input mirror and an output mirror defining a resonant cavity and a light path within the resonant cavity and between the mirrors. A lasant material is positioned in the light path for lasing at a desired fundamental wavelength and possibly other, unwanted wavelengths. A first birefringent member is also positioned in the light path for refracting in different directions the different wavelengths of light which are present along the path.

Abstract: A vertical cavity surface emitting laser with polarization control includes a first stack of distributed Bragg reflectors positioned on a substrate with an active region including a first cladding region and a second cladding region positioned on opposite sides of an active area overlying the first stack of distributed Bragg reflectors A second stack of distributed Bragg reflectors is positioned on the active region. The second stack has an ion implantation region formed to control and define a lasing threshold of the laser.

Abstract: A polarizer/modulator assembly (10) including a polarizing unit (12) and a modulator unit (14) that are selectively and independently positionable within a resonator cavity of a solid state diode slab laser. The polarizing unit (12) includes a pair of polarizing elements (32, 34) positioned in a "V-shaped" configuration so that both elements (32, 34) are positioned at Brewster's angle with respect to the beam path to combine to polarize the light in the same direction. The combination of the polarizing elements (32, 34) eliminates beam deflection when the polarizer unit (12) is inserted into the beam path. The polarizing elements (32, 34) are mounted in a metal housing (30) that captures rejected light from the polarizing elements (32, 34). The housing (30) includes a cooling tube (52) to control temperature of the housing (30) during temperature build-up caused by the rejected light.

Abstract: The instant invention relates to a laser system for optical free space communications, in particular the generation of amplified laser light under conditions in outer space. In the process, an optical beam (72) to be amplified is conducted via a polarizing beam splitter (71) to a Faraday rotator (70) and brought from there to a neodymium crystal (68). By means of reflection, appropriate diffraction and passage through a quarter-wave plate (67), a multiple passage through the neodymium crystal (68) is forced and amplification is achieved by this.

Abstract: A vertical cavity surface emitting laser is formed by eutectically bonding a laser cavity, defined by an active layer disposed between first and second, stacked mirror assemblies, to a host substrate which has a predetermined anisotropic coefficient of thermal expansion. During the forming process, a uniaxial strain is induced within the laser cavity. With this arrangement, large arrays of vertical cavity surface emitting lasers can be formed with predetermined polarization states that are based on the selected anisotropic host substrate.

Abstract: A tunable laser and method for operating the same, wherein the tunable laser utilizes a tunable Fabry-Perot filter as its wavelength-selective component. In one form of the invention, the tunable laser is characterized by the provision of optical elements (hereinafter referred to as "optical operators" or just "operators") on either side of the tunable Fabry-Perot filter, whereby the tunable Fabry-Perot filter can be set at a right angle to the optical path of the laser without introducing reflection problems interfering with the optimum lasing.

Abstract: An intracavity doubled single longitudinal mode laser is disclosed which provides stable (i.e., low amplitude variation in its output beam intensity), efficient operation. An associated method is also disclosed. The laser includes an input mirror and an output mirror defining a resonant cavity and a light path within the resonant cavity and between the mirrors. The output mirror is configured to be substantially transparent to an output wavelength produced within the cavity. A lasant material is positioned in the light path for producing light at a desired fundamental wavelength and possibly other, unwanted wavelengths. Polarizing element and a type I doubling material are also positioned in the light path. During operation of the laser, the polarizing element polarizes the desired fundamental wavelength as well as the unwanted wavelengths of light produced by the lasant material. The type I doubling material then produces output wavelengths at twice the frequency of any wavelengths passing therethrough.

Abstract: A laser system having a resonant cavity that is stable in one axis so that a wavelength selector can be used for producing a narrow line output, and is unstable in an orthogonal axis for high energy extraction efficiency and for low output beam divergence. The resonant cavity terminates at one end with a cylindrical mirror and at the other end with a dispersive wavelength selector. A gain medium is disposed in the resonant cavity, and is excited by a power supply to generate a laser beam that oscillates in the resonant cavity. A portion of the laser beam is coupled out of the resonant cavity as an output laser beam. The cylindrical mirror has a cylindrical reflecting surface oriented to diverge the laser beam at a first azimuthal angle relative to an axis of the resonant cavity. The dispersive wavelength selector disperses the laser beam as a function of wavelength at a second azimuthal angle relative to the resonant cavity axis. The second azimuthal angle is orthogonal to the first azimuthal angle.

Abstract: An optical fiber amplifier is pumped by a pair of pump lasers which have at least partially overlapping resonators. In one embodiment, the fiber gain section of the amplifier is located external to the resonators. In another embodiment, the coupler, which couples the pump lasers to the gain section, is located at least partially within said resonators. In a preferred embodiment the resonators are provided with polarization selection properties, and the outputs of the pump lasers are coherent.

Abstract: An object of the present invention is to provide a wavelength selectable laser oscillator in wavelength tunable laser by which high-speed tuning of wavelength can be achieved while utilizing continuous-wave laser beam as the excited laser beam.

Abstract: Methods and devices for generation of phase conjugate light and wavelength conversion, and systems each having the device. In a basic structure of the present invention, a signal light beam is first separated into first and second polarization components by a polarization beam splitter. The first and second polarization components are next converted into first and second phase conjugate light beams by a single DFB (distributed feed-back) laser diode or two DFB laser diodes. In the case that a single DFB laser diode is used, the first and second phase conjugate light beams are combined by the above-mentioned polarization beam splitter. In the case that two DFB laser diodes are used, the first and second phase conjugate light beams are combined by an another polarization beam splitter. Through the structure, it can be possible to provide a phase conjugate light generator having no polarization dependence of conversion efficiency.

Abstract: A diode pumped laser includes a resonator mirror and an output coupler, defining a laser resonator with a resonator optical axis. A strong thermal lens gain medium with a TEM.sub.00 mode diameter is mounted in the resonator along the resonator optical axis. The dopant level of the gain medium is in the range of 0.01 to less than 0.5 percent. A diode pump source supplies a pump beam to the gain medium in the laser resonator, and produces an output beam with a diameter larger than the TEM.sub.00 mode diameter to reduce thermal birefringence. A power source supplies power to the diode pump source. A polarizing element can be positioned in the resonator, along with a aperture stop The laser operates well over a large range of pump powers. Its slope efficiency in the TEM.sub.00 mode is greater than 40%, with an overall efficiency greater than 25%. One of the gain mediums used is Nd:YVO.sub.4. This material exhibits high gain and a short upper state lifetime.

Abstract: A single mode laser implementation and associated method are disclosed. The laser may accommodate a frequency multiplying material to provide an intracavity doubled single frequency laser. The laser implementation includes an input mirror and an output mirror defining a resonant cavity and a light path within the resonant cavity and between the mirrors. A lasant material is positioned in the light path for lasing at a desired fundamental wavelength and possibly other, unwanted wavelengths. A first birefringent member is also positioned in the light path for refracting in different directions the different wavelengths of light which are present along the path.

Abstract: A passive eight-pass solid-state laser amplifier is constructed using a quarter-wave plate (11), a total reflection mirror (12), a polarization beam splitter (5), and a total reflection mirror (6) while input/output faces of a hexagonal zigzag slab solid-state laser medium (15) optically pumped are kept nearly perpendicular to pulsed laser light. Thermal birefringence takes place in the laser medium (15) optically pumped with good symmetry by flash lamps or LDs (9) and is compensated for by a quartz 90.degree. rotator (10). Linearly s-polarized laser light reflected by a polarization beam splitter (3) is output as pulsed laser output light (13) to the outside. Owing to this, saturation laser amplification can be achieved using output laser light from a pulsed laser oscillator of relatively low output, as source light.

Abstract: A laser system capable of high speed silicon wafer dicing is disclosed. A laser with high average power, high repetition rate, ultra-short pulsewidth, and excellent beam quality is described. This is achieved by the use of high power diodes used to uniformly pump an improved Nd:YAlO.sub.3 crystal, resulting in a beam with excellent quality. In addition, a beta-barium borate (BBO) crystal, used in conjunction with drift step recovery diodes (DSRDs), forms a high speed optical switch which can be used to cavity dump the laser.

Abstract: A laser with high average power, high repetition rate, ultra-short pulsewidth, and excellent beam quality is described. This is achieved by the use of high power diodes used to uniformly pump an improved Nd:YAlO.sub.3 crystal, resulting in a beam with excellent quality. In addition, a beta-barium borate (BBO) crystal, used in conjunction with drift step recovery diodes (DSRDs), forms a high speed optical switch which can be used to cavity dump the laser.

Abstract: An eyesafe laser (10) transmitter having a single resonator cavity (16) for both the pump laser and the optical parametric oscillator (22). A Nd:YAG rod (24) provides gain for light at a first wavelength. A combined Q-switch/Brewster plate (26) Q-switches the light to increase its intensity and polarizes the light so that its polarization plane is perpendicular to the Z-axis of a KTP crystal functioning as the optical parametric oscillator, thereby providing type II phase matching conditions. The optical parametric oscillator transforms the light at the first wavelength to light at a second wavelength which is output thorough a partially reflective outcoupler at a wavelength which will not harm the eyes.

Abstract: A Q-switched solid-state laser has a narrow-band laser diode (18) whose narrow-band output radiation serves as seed radiation for exciting a solid (14), with the result that only a single wavelength-stable longitudinal mode oscillates in the resonator (10, 12) of the solid-state laser and corresponding radiation (16) is emitted.

Abstract: A laser system capable of providing light of high intensity is disclosed. This system includes a laser gain medium and three reflectors. A first reflector and a second reflector spaced from the first reflector define a laser cavity that contains the laser gain medium. Light reflected by the first reflector is amplified by the laser gain medium. A third reflector is spaced from the second reflector to define a resonant cavity external to the laser cavity. Light passes from the laser cavity to resonate in the external resonant cavity. Part of the light passes from the external resonant cavity to the laser cavity. A light-screening device, e.g., an aperture, is disposed between the second reflector and the gain medium to screen light reflected from the external cavity such that the light portion of constructive interference is preferentially passed over the light portion of destructive interference. This enables the gain medium to optically lock to the resonant frequency of the external cavity.

Abstract: A short wavelength light source mainly comprises a semiconductor laser for pumping a laser medium, a birefringence filter for controlling or stabilizing the waveform by applying an optical feedback to the semiconductor laser to feed back only light of specific wavelength, lens systems for focusing the pumping light, and an optical resonator composed of a laser medium formed of Nd:YAG doped with 1% of Nd and a nonlinear optical element formed of KNbO.sub.3. The birefringence filter is structured as a Lyot filter, and is composed of a birefringence element made of 2 mm thick non-doped YVO.sub.4, a polarizer, and a birefringence element made of 4 mm thick non-doped YVO.sub.4.This constitution realizes a short wavelength light source achieving a single longitudinal mode oscillation while maintaining a high output, small in size, superior in efficiency, and excellent in wavelength stability.

Abstract: A self starting, self mode-locked laser is disclosed that utilizea gain saturation lens and an optical Kerr lens to start and to sustain passive mode locking. The laser consists of a resonant cavity which has a saturable gain medium and an optical Kerr lens medium. The laser cavity is described such that the loss modulation induced by the gain saturation lens is cascaded to that of the optical Kerr lens to start the mode locking process, while the loss modulation of the Kerr lens maintains the mode locking. The self mode locking operation restores automatically without any additional induction mechanism, after the pump laser beam or the laser cavity is blocked and then unblocked. In a preferred embodiment, the laser includes a resonant cavity , a Ti:sapphire crystal which produces both the gain saturation lens and the optical Kerr lens, a prism pair for ultra-short pulse operation, and a slit for laser bandwidth control and wavelength tuning. This laser can produce stable pulses shorter than 100 femtosecond.

Abstract: An apparatus for spectral narrowing of high power diode laser arrays includes a high power diode laser array configured for production of an output light beam, a collimator configured for collimation of the output light beam, and a half-wave plate and polarizing beamsplitter positioned to receive the output light beam and to separate it into a feedback beam and a usable beam. The apparatus further includes an interference filter positioned to receive the feedback beam and form it into a filtered feedback beam. The filter has a narrow passband about a desired wavelength. The apparatus still further includes a cat's eye reflector to receive the feedback beam, direct it through the interference filter, and couple the filtered feedback beam into the diode laser array.

Abstract: An attenuator/filter is disclosed that is inherently tuned and provides for a stimulated Brillouin scattering effect having a predetermined threshold that fixes the output thereof at a predefined power level. The stimulated Brillouin scattering effect is disclosed as being provided by either a fused silica optical fiber or a fiber-optic ring resonator both of which act as a filter to allow selected frequencies to pass. The SBS threshold is selected to improve the sideband to carrier power ratio which, in turn, determines the modulation depth for the modulated signal.