Abstract: A high power pulsed laser system is configured with at least two gain blocks and with at least one saturable absorber (SA) coupled to the output and input of the respective gain blocks. The SA is configured so that Qsat_sa<Qsat_gb, wherein Qsat_sa is a saturation energy of the SA, and Qsat_gb is a saturation energy of the gain blocks. The SA is further configured with a recovery time ?<1/f providing for the substantially closed state of the SA, wherein the f is a pulse repetition rate, and with the recovery time ? smaller than a round trip time Tround_trip=2*(L1+L2)*n/c, where L1, L2—lengths of the respective gains gain blocks, n—a refractive index of active media, c—a speed of light in vacuum.

Abstract: The present invention relates to a laser apparatus having a structure for removing a skirt portion contained in pulsed light, and a laser processing method using the laser apparatus. The laser apparatus comprises a MOPA fiber laser light source which outputs pulsed light having a skirt portion with a light intensity lower than a predetermined value, and a saturable absorber which removes a skirt portion from the pulsed light outputted from the MOPA fiber laser light source.

Abstract: A device (100) is described for actively or passively modulating incident radiation, the device comprising at least one diffraction means (10) adapted for evanescent wave excitation upon irradiation with the incident radiation, and an absorption layer (40) adjacent the at least one diffraction means (10) so that the evanescent waves can interact with the absorption layer (40). The absorption layer (40) has alterable absorption properties so as to alter the absorption of the evanescent waves resulting in modulating of the incident radiation. The device (100) may be for actively modulating incident radiation thus being e.g. a modulator for laser radiation. Alternatively, the device may be for passively modulating incident radiation, thus acting as a sensing device for sensing environmental parameters.

Abstract: A passively Q-switched laser comprises a pump laser diode, a micro laser resonant cavity including a lasing medium and a saturable absorber, a filter and a photodiode. The lasing medium and saturable absorber are bonded together, and dielectric film is coated on the surfaces of the bonded body to form the laser resonant cavity. The filter reflects a portion of the Q-switched laser pulse beam. The photodiode can detect and convert the laser pulse to electric signal for triggering purpose.

Abstract: A mode-locked fiber laser comprising a multicomponent glass fiber doped with a trivalent rare-earth ion of thulium and/or holmium and including a fiber-optic based passive saturable absorber that contains an adhesive material mixed with a saturable absorbing components and is disposed along the length of an optical fiber such as to assure that a mode propagating within the fiber spatially overlaps with the volume occupied by the saturable absorbing components.

Abstract: A compact solid state laser that generates multiple wavelengths and multiple beams that are parallel, i.e., bore-sighted relative to each other, is disclosed. Each of the multiple laser beams can be at a different wavelength, pulse energy, pulse length, repetition rate and average power. Each of the laser beams can be turned on or off independently. The laser is comprised of an optically segmented gain section, common laser resonator with common surface segmented cavity mirrors, optically segmented pump laser, and different intra-cavity elements in each laser segment.

Abstract: A high power pulsed laser system is configured with at least two gain blocks and with at least one saturable absorber (SA) coupled to the output and input of the respective gain blocks. The SA is configured so that Qsat_sa<Qsat_gb, wherein Qsat_sa is a saturation energy of the SA, and Qsat_gb is a saturation energy of the gain blocks. The SA is further configured with a recovery time ?<1/f providing for the substantially closed state of the SA, wherein the f is a pulse repetition rate, and with the recovery time ? smaller than a round trip time Tround_trip=2*(L1+L2)*n/c, where L1, L2—lengths of the respective gains gain blocks, n—a refractive index of active media, c—a speed of light in vacuum.

Abstract: A system for emitting a polychromatic light, has a laser cavity device used to optically pump the laser cavity emit radiation according to at least one excitation wavelength and light guiding mechanism arranged in such a way as to supply a polychromatic light to an outlet in the event of excitation by the radiation in a non-linear interaction regime. In the system, the guiding mechanism is arranged inside a cavity formed by at least two sub-cavities, a first sub-cavity forming the laser cavity and a second sub-cavity comprising the guiding mechanism, the first and second sub-cavities being coupled.

Abstract: A linear-cavity all-fiber-based ultra short pulse laser system is provided. The all-fiber-based ultra short pulse laser system includes a pulse pump light source, a gain fiber, a first fiber signal pump combining unit, a broadband optical isolator, a fiber saturable absorber, an assistant light source, a second fiber signal pump combining unit, and a light coupling output. A broadband amplified spontaneous emission, emitted by the first fiber signal pump combining unit, which is connected to the pulse pump light source and the gain fiber, passes through the broadband optical isolator. The second fiber signal pump combining unit is connected to the assistant light source and the fiber saturable absorber. An ASE signal actively provides passive mode locking of the cavity, and the light coupling output partially outputs the laser. A dispersion fiber controls the temporal width.

Abstract: A pulsed light generator of the invention includes: an excitation light source; a fiber grating into which excitation light from the excitation light source enters; a rare-earth doped optical fiber optically coupled with the fiber grating, in which a rare-earth element is doped into a core, serving as an optical transmitting section; an optical switch including a deflection element for causing a Q-switching operation; a first optical fiber that causes light from the rare-earth doped optical fiber to enter into the optical switch; and a second optical fiber for waveguiding pulsed light output from the optical switch. One surface side of the optical switch, into which light enters, is subjected to anti-reflection treatment with a reflectance with respect to a wavelength of the pulsed light output from the optical switch being 0.1% or less.

Abstract: A novel polarization maintaining optical fiber, which can be used as a high-power polarization maintaining fiber laser or amplifier, is described. Insensitivity of the polarization state to external fiber bending and temperature changes is accomplished by minimizing polarization mode-coupling via reducing stresses inside the fiber core via increasing the fiber diameter. Alternatively, polarization mode-coupling can be minimized by an optimization of the fiber coating to minimize stresses at the interface between the fiber and the coating. As a result insensitivity to polarization mode-coupling is obtained at greatly reduced values of birefringence compared to small-diameter fibers. The fiber is of significant use in any application where polarization stability is important, and will be useful in telecommunications applications in particular for reducing polarization mode dispersion. An implementation in a parabolic pulse-producing fiber laser is also described as one specific high power example.

Abstract: The present invention is directed to providing an environmentally stable, ultra-short pulse source. Exemplary embodiments relate to passively modelocked ultra-short fiber lasers which are insensitive to temperature variations and which possess only negligible sensitivity to pressure variations. Further, exemplary embodiments can be implemented in a cost-effective manner which render them commercially practical in unlimited applications. Arbitrary fiber lengths (e.g., on the order of 1 millimeter to 1 kilometer, or greater) can be used to provide an ultra-short pulse with a cost-effective architecture which is commercially practical.

Abstract: A mode-locked laser employs a coupled-polarization scheme for efficient longitudinal pumping by reshaped laser diode bars. One or more dielectric polarizers are configured to reflect a pumping wavelength having a first polarization and to reflect a lasing wavelength having a second polarization. An asymmetric cavity provides relatively large beam spot sizes in gain medium to permit efficient coupling to a volume pumped by a laser diode bar. The cavity can include a collimation region with a controlled beam spot size for insertion of a saturable absorber and dispersion components. Beam spot size is selected to provide stable mode locking based on Kerr lensing. Pulse durations of less than 100 fs can be achieved in Yb:KGW.

Abstract: A pulsed laser for machining, has a mode switch, e.g. Q-switch device (15, 30, 40), in a resonant optical cavity (20) capable of supporting a given lasing mode, e.g. a transverse mode of oscillation when lasing action is started, arranged to induce, e.g. temporarily, a localized change, e.g. loss, in the cavity. The latter alters the given lasing mode, e.g. causes the oscillation to hop to a higher transverse mode temporarily, which on its hand may be extinguished by an aperture limiting diaphragm (5) or equivalent and subsequently reduce the induced loss temporarily, to return the oscillation to the given transverse mode and output the laser pulse. A modulator can be used for inducing the temporary loss for a first transverse lasing mode and extinguishing the higher transverse mode with a diaphragm. The induced loss can be over a localized area much smaller than the dimensions of a beam of the laser, so that a miniaturized modulator can be used. In this way pulsed operation may be achieved.

Abstract: A light source apparatus includes an optical resonator formed by an optical amplification medium and an optical switch. The optical switch includes a saturable absorber and changes its transmittance or reflectance when receiving an optical pulse emitted from a light irradiation source which includes a wavelength-tunable light source. The light source apparatus emits amplified light from the optical resonator in correspondence with the center wavelength of the optical pulse from the wavelength-tunable light source. The relationship between a length L and an effective refractive index n of the optical resonator and a repetition frequency f of the optical pulse satisfies a condition L<c/(nf), and a relationship between the length L and a recovery time ? in which the changed transmittance or reflectance of the optical switch recovers satisfies a condition ?>(nL)/c.

Abstract: There is provided a mode-locked laser including: a resonator having a pair of resonance mirrors; a solid-state laser medium, disposed in the resonator and outputting oscillating light due to excitation light being incident thereon; an excitation unit that causes the excitation light to be incident on the solid-state laser medium; a mode-locked element, disposed in the resonator for inducing mode locking; and a temperature adjusting unit that adjusts the temperature of the pair of resonance mirrors such that oscillating light of a specific frequency is output from the resonator.

Abstract: A system and method for controllably chirping electromagnetic radiation from a radiation source includes an optical cavity arrangement. The optical cavity arrangement enables electromagnetic radiation to be produced with a substantially linear chirp rate and a configurable period. By selectively injecting electromagnetic radiation into the optical cavity, the electromagnetic radiation may be produced with a single resonant mode that is frequency shifted at the substantially linear chirp rate. Producing the electromagnetic radiation with a single resonant mode may increase the coherence length of the electromagnetic radiation, which may be advantageous when the electromagnetic radiation is implemented in various applications. For example, the electromagnetic radiation produced by the optical cavity arrangement may enhance a range, speed, accuracy, and/or other aspects of a laser radar system.

Abstract: A ring-cavity or linear-cavity all-fiber-based ultra short pulse laser system and method of operating the same are provided. The all-fiber-based ultra short pulse laser system includes a pulse pump light source, a gain fiber, a first fiber signal pump combining unit, a broadband optical isolator, a fiber saturable absorber, an assistant light source, a second fiber signal pump combining unit, and a light coupling output. The first fiber signal pump combining unit is respectively connected to the pulse pump light source and the gain fiber to emit broadband amplified spontaneous emission, then the broadband amplified spontaneous emission passes through the broadband optical isolator. The second fiber signal pump combining unit is respectively connected to the assistant light source and the fiber saturable absorber. An ASE signal actively provides passive mode locking of the cavity, and the light coupling output partially outputs the laser. A dispersion fiber controls the temporal width.

Abstract: An intracavity resonant Fabry-Perot saturable absorber (R-FPSA) induces modelocking in a laser such as a fiber laser. An optical limiter such as a two photon absorber (TPA) can be used in conjunction with the R-FPSA, so that Q-switching is inhibited, resulting in laser output that is cw modelocked. By using both an R-FPSA and a TPA, the Q-switched modelocked behavior of a fiber laser is observed to evolve into cw modelocking.

Abstract: A microcrystal laser for generating laser pulses has a laser resonator which has a laser medium arranged between two mirrors; and an arrangement for stabilizing the optical path length is provided. The laser resonator has a saturable absorber medium for pulse generation.

Abstract: Geometrical design of laser microchips is disclosed that allows variation of the optical path length in the different media by simple displacement of the microchip, the movement having a non-zero projection orthogonal to the pump beam. The concept can be implemented to vary optical loss in the lasing cavity, the absorbed pump power, or the optical length of the cavity. Passively Q-switched microchip laser output performance can thus be controlled by simple transverse displacement of the microchip relative to the pump beam. The above microlaser can be combined with voltage-controlled variable-focus output optics in order to control the peak power density of the laser pulses.

Abstract: A projection system includes a light source module illuminating a plurality of monochromic lights, at least one optical modulator modulating the lights illuminated by the light source module according to each of color signals, a color combining prism combining the monochromic lights modulated by the optical modulator to form an image, and a projection lens projecting the image formed by the color combining prism toward a screen. A semiconductor diode including a P type semiconductor layer, an intrinsic semiconductor layer, and an N type semiconductor layer to absorb or transmit the monochromic lights according to the value of a reverse bias voltage is arranged in units of pixels.

Abstract: A dual-cavity single longitudinal mode (SLM) laser oscillator generates a pulsed laser signal having a long pulsewidth, long coherence length, and good shot-to-shot energy stability. The laser oscillator has a first cavity between an output coupler and a rear mirror and a second cavity between the output coupler and an intra-cavity mirror disposed between the output coupler and rear mirror. High-loss cavity optics and a passive Q-switch achieve a very high number of round trips that reduce the number of cavity modes down to two or three. The dual cavity design further discriminates between the remaining modes and allows SLM operation. The laser oscillator and an amplifier can be used as a pump laser for a laser system that generates red, green, and blue pulses for holographic recording. A wavelength conversion stage uses optical parametric amplifier(s), doubling crystals, and sum-frequency mixers to produce RGB light from the pump pulses.

Abstract: A method and device for reducing the timing jitter in a passive Q-switched Nd:YAG solid state laser by spatially selective bleaching a thin sheet of a saturable absorber of Cr+4:YAG from a direction orthogonal to the direction of laser emission where the Cr+4:YAG transmission increases 18% when the bleaching probe beam is a single laser diode bar. For steady state operation of a passive Q-switched laser, the pulse-to-pulse timing jitter showed a ?12× reduction in standard deviation from 241 nsec for free running operation to 20 nsec with optical triggering.

Abstract: A pulsed laser system having a Tm3+-doped saturable absorber Q-switch unit, capable of outputting laser pulses sequentially by inputting a stable continuous-wave pump light source, is disclosed. When the gain excited in the Er3+ laser resonator exceeds the lasing threshold, the photons start resonating and being amplified in the Er3+ laser resonator. At the same moment, the Tm3+-doped saturable absorber Q-switch unit absorbs the resonant photons and quickly reaches the situation of absorption saturation. Then, sequentially Q-switched Er3+ laser pulses at 1570 nm are passively produced. In addition, the Tm3+-doped saturable absorber Q-switch unit can be designated as the gain material of a second laser resonator for producing a gain-switched Tm3+ laser pulse at 1950 nm after each of the Q-switched Er3+ laser pulses. Moreover, the Tm3+ and Ho3+ co-doped crystal can be designated as the saturable absorber Q-switch unit, for producing a gain-switched Ho3+ laser pulses at 2090 nm.

Abstract: Disclosed herein are systems and methods for generating a side-pumped passively Q-switched non-planar ring oscillator. The method introduces a laser into a cavity of a crystal, the cavity having a round-trip path formed by a reflection at a dielectrically coated front surface, a first internal reflection at a first side surface of the crystal at a non-orthogonal angle with the front, a second internal reflection at a top surface of the crystal, and a third internal reflection at a second side surface of the crystal at a non-orthogonal angle with the front. The method side pumps the laser at the top or bottom surface with a side pump diode array beam and generates an output laser emanating at a location on the front surface. The design can include additional internal reflections to increase interaction with the side pump. Waste heat may be removed by mounting the crystal to a heatsink.

Abstract: In a mode-locked laser-diode-excited laser apparatus: a solid-state laser medium is arranged at a distance of at most twice the Rayleigh range from a saturable absorbing mirror with a depth of absorbing modulation of at least 0.4%; the total intracavity dispersion is smaller than zero and makes oscillating light have such a pulse bandwidth that the saturable absorbing mirror can suppress a background pulses other than soliton pulses repeated with a fundamental repetition period, and the magnitude of the total intracavity dispersion has a predetermined relationship with a pulse width of the oscillating light; and an output mirror is a negative-dispersion mirror being constituted by two multilayer mirrors and a cavity layer sandwiched between the two multilayer mirrors, and causing a mirror dispersion of ?3000 fsec2 to ?600 fsec2 and realizes a reflectance of 97% to 99.5%.

Abstract: In a mode-locked laser-diode-excited laser apparatus: a solid-state laser medium is arranged at a distance of at most twice the Rayleigh range from a saturable absorbing mirror with a depth of absorbing modulation of at least 0.4%; the total intracavity dispersion is smaller than zero and makes oscillating light have such a pulse bandwidth that the saturable absorbing mirror can suppress a background pulses other than soliton pulses repeated with a fundamental repetition period, and the magnitude of the total intracavity dispersion has a predetermined relationship with a pulse width of the oscillating light; and an output mirror is a negative-dispersion mirror being constituted by three or more multilayer mirrors and cavity layers arranged at predetermined intervals between the three or more multilayer mirrors, and causing a mirror dispersion of ?3000 fsec2 to ?600 fsec2 and realizes a reflectance of 97% to 99.5%.

Abstract: An intracavity resonant Fabry-Perot saturable absorber (R-FPSA) induces modelocking in a laser such as a fiber laser. An optical limiter such as a two photon absorber (TPA) can be used in conjunction with the R-FPSA, so that Q-switching is inhibited, resulting in laser output that is cw modelocked. By using both an R-FPSA and a TPA, the Q-switched modelocked behavior of a fiber laser is observed to evolve into cw modelocking.

Abstract: A novel method and apparatus for suppressing ASE and/or parasitic oscillation modes in a laser is introduced. By roughening one or more peripheral edges of a solid-state crystal or ceramic laser gain media and by bonding such edges to a predetermined electromagnetic absorbing material arranged adjacent to the entire outer surface of the peripheral edges of the roughened laser gain media, ASE, parasitic oscillation modes and/or residual pump energy can be effectively suppressed.

Abstract: The invention relates to a passively triggered microchip laser (1) formed by a cavity closed by an input mirror (4) and an output mirror (5), characterised in that the cavity includes deflection means (9, 10, 11, 12, 13) designed to deflect a light beam (14) between the input mirror (4) and the output mirror (5).

Abstract: Systems and methods are disclosed herein to provide monoblock lasers that may provide improved performance and/or reduce manufacturing costs. For example, in accordance with an embodiment of the present invention, a monoblock laser includes a gain block to generate the light at the first wavelength and a Q switch to receive and polarize the light from the gain block and provide pulsed light that is polarized and at the first wavelength, with the monoblock laser configured in an internal OPO configuration. The monoblock laser may include a film between the gain block and a common substrate and/or include various techniques for aligning various optical elements within the monoblock laser.

Abstract: A high power pulsed laser system is configured with at least two gain blocks and with at least one saturable absorber (SA) coupled to the output and input of the respective gain blocks. The SA is configured so that Qsat_sa<Qsat_gb, wherein Qsat_sa is a saturation energy of the SA, and Qsat_gb is a saturation energy of the gain blocks. The SA is further configured with a recovery time ?<1/f providing for the substantially closed state of the SA, wherein the f is a pulse repetition rate, and with the recovery time ? smaller than a round trip time Tround_trip=2*(L1+L2)*n/c, where L1, L2—lengths of the respective gains gain blocks, n—a refractive index of active media, c—a speed of light in vacuum.

Abstract: An all-fiber saturable absorber Q-switched laser and the method for producing saturable absorber Q-switched pulses are provided. By locating a saturable absorber fiber in the intensity-enhanced section of a ring resonator, the Q-switched pulses are produced and enhanced. The present application is advantageous in the simple design and effective cost, and is applicable for a variety of fiber-type laser materials.

Abstract: The invention is a single-crystal passively mode-locked semiconductor vertical-external-cavity surface-emitting laser (VECSEL). The device can be a single emitter or an array of emitters. The VECSEL structure is grown on a GaAs, InP or GaSb substrate. The device consists of an active region with a number of quantum wells (QW) made of GaInAs, GaInAsP, GaInNAs, GaInNAsSb, AlGaAs or GaAsP. The fundamental lasing wavelength is chosen by the gain material. The gain region is sandwiched between the bottom reflector with reflectivity close to 100% and a partial reflector. A semiconductor spacer layer made of e.g. GaAs or AlGaAs is separating the gain region and a semiconductor saturable absorber. The saturable absorber consists of one or more quantum wells made of GaInAs, GaInAsP, GaInNAs, GaInNAsSb, AlGaAs or GaAsP and a second partial reflector.

Abstract: The pulse laser light source 1 is provided with an excitation light source 10, lenses 11 through 13, a dichroic mirror 14, an amplifier medium 21, a first reflection portion 22, a laser medium 23, a third reflection portion 24, a saturable absorber 25 and a second reflection portion 26. The reflection portion 22 and the reflection portion 26 compose a laser resonator having the laser medium 23, the reflection portion 24 and the saturable absorber 25 on a resonance path. Further, the amplifier medium 21, the reflection portion 22, the laser medium 23, the reflection portion 24, the saturable absorber 25 and the reflection portion 26 are disposed in order and are integrated with each other. Therefore, the pulse laser light source 1 is able to output pulse laser light of high energy with a short pulse width.

Abstract: The present invention discloses a high power Q-switched, intracavity frequency-doubled laser for laser ablation of soft tissue. Operating a high power Q-switched laser in a frequent on-off mode is highly desirable for laser prostatectomy. Giant first pulse may occur when a Q-switched laser is switched from laser-ready mode to pulse-on mode due to sudden depletion of stored energy in the gain medium. Such a giant first pulse may cause power damage of intracavity optics. Besides, temperature shock induced by sudden onset of a high power pulse train may cause optical damage on surface coating of intracavity optics. The present invention contemplates to suppress these giant first pulses and temperature shocks through pre-lasing and ramping profile of laser parameters. Reliable and frequent on-off operation of a diode-pumped, Q-switched, frequency-doubled Nd:YAG laser is demonstrated for output power up to 100 W.

Abstract: The present invention relates to a laser light source having a structure that has high durability to support high power output. The laser light source is an optical device that pulse-oscillates laser light and has a resonator, a rare earth element doped fiber, pumping means, Q switch means, and a condensing lens. The resonator forms a resonance optical path. A fiber is inserted on the resonance optical path and outputs radiation light by supply of pumping energy. The pumping means continuously supplies pumping energy to the fiber. The Q switch means modulates resonator loss of the resonator. The condensing lens condenses the radiation light whose spot size has been expanded and which propagates from the fiber to the Q switch means.

Abstract: A surface emitting laser (SEL) with an integrated absorber. A lower mirror and an output coupler define a laser cavity of the SEL. A monolithic gain structure positioned in the laser cavity includes a gain region and an absorber, wherein a saturation fluence of the absorber is less than a saturation fluence of the gain region.

Abstract: Multiple laser resonators share a common acousto-optic Q-switch. The Q-switch is driven by a radio-frequency (RF) transducer that causes an acoustic wave to propagate in the Q-switch. Turning off the RF transducer discontinues propagation of the acoustic wave and causes each of the laser resonators to deliver an optical pulse. The finite velocity of the acoustic wave causes the pulses to be delivered temporally spaced apart.

Abstract: A method for controlling operation of a transistor includes the following steps: providing a bipolar transistor having emitter, base and collector regions; applying electrical signals to the transistor to produce light emission from the transistor; effecting photon-assisted tunneling of carriers in the transistor with self-generated photons of the light emission, and controlling operation of the transistor by controlling the photon-assisted tunneling.

Abstract: A method for producing an optical output, including the following steps: providing first and second electrical signals; providing a bipolar light-emitting transistor device that includes collector, base, and emitter regions; providing a collector electrode coupled with the collector region and an emitter electrode coupled with the emitter region, and coupling electrical potentials with respect to the collector and emitter electrodes; providing an optical coupling in optical communication with the base region; providing first and second base electrodes coupled with the base region; and coupling the first and second electrical signals with the first and second base electrodes, respectively, to produce an optical output emitted from the base region and coupled into the optical coupling, the optical output being a function of the first and second electrical signals.

Abstract: A laser apparatus 10 includes: a laser medium 11 arranged between a pair of reflecting means 12A and 12B of an optical resonator 12 and adapted to be excited to emit light; a saturable absorber 14 arranged on the optical axis L of the optical resonator 12 between the pair of reflecting means, the transmissivity thereof being adapted to increase with the absorption of emitted light 21 from the laser medium; and an excitation light source unit 13 adapted to output light 22 having a wavelength that excites the laser medium. The saturable absorber 14 is a crystalline body having first to third mutually perpendicular crystallographic axes and is arranged in the optical resonator 12 in such a manner as to have different transmissivities for emitted light in two mutually perpendicular polarization directions.

Abstract: A monolithic passively Q switched microlaser includes an optically transparent heat conductive element bonded to a gain medium, which is in turn bonded to a saturable absorber, which may also be bonded to a second optically transparent heat conductive element. Only the gain medium and saturable absorber are disposed within the laser resonator.

Abstract: Semiconductor laser diodes, particularly high power ridge waveguide laser diodes, are often used in opto-electronics as so-called pump laser diodes for fiber amplifiers in optical communication lines. To provide the desired high power output and stability of such a laser diode and avoid degradation during use, the present invention concerns an improved design of such a device, the improvement concerns a method of suppressing the undesired first and higher order modes of the laser which consume energy and do not contribute to the optical output of the laser, thus reducing it's efficiency. This novel effect is provided by a structure comprising CIG—for Complex Index Guiding—elements on top of the laser diode, said CIG being established by fabricating CIG elements consisting of one or a plurality of layers and containing at least one layer which provides the optical absorption of undesired modes of the lasing wavelength.

Abstract: Systems, configurations and methods of using an ultrafast, self-starting, mode-locked laser are provided. The systems, devices and methods of using stable, self-starting mode-locked lasers, can be compact, use fewer optical elements and have energies sufficient for most micro-processing and micro-structuring applications. The large spectral bandwidth of ultra-short (femtosecond) laser pulses can be used in laser sensing applications, micro-machining, time-resolved experiments, where short-lived transient species can be observed in biological or chemical reactions. Terahertz radiation can be generated using ultrashort pulses and used for imaging applications.

Abstract: Apparatuses and methods are disclosed for applying laser energy having desired pulse characteristics, including a sufficiently short duration and/or a sufficiently high energy for the photomechanical treatment of skin pigmentations and pigmented lesions, both naturally-occurring (e.g., birthmarks), as well as artificial (e.g., tattoos). The laser energy may be generated with an apparatus having a resonator with the capability of switching between a modelocked pulse operating mode and an amplification operating mode. The operating modes are carried out through the application of a time-dependent bias voltage, having waveforms as described herein, to an electro-optical device (e.g., a Pockels cell) positioned along the optical axis of the resonator.

Abstract: The invention discloses an actively Q-switched laser with an intracavity nonlinear coupler in which a stable optical frequency converted output is generated. A Gain Fluctuation Insensitivity Condition is defined and described for several examples. The nonlinear coupler with a coupling level which satisfies this Condition permits stable laser operation with minimal interaction between pulses, even when the pulses are clipped by the Q-switch. Thus, the output pulse duration and repetition frequency of the disclosed laser can be varied over a large range substantially independent of laser gain level and dynamics. Second and third harmonic optical frequency conversion is demonstrated, although the disclosed laser is applicable to other optical frequency conversion regimes as well.

Abstract: A semiconductor saturable absorber and the fabrication method thereof are provided. The semiconductor saturable absorber includes a Fe-doped InP substrate, a periodic unit comprising an AlGaInAs QW formed on the Fe-doped InP substrate and an InAlAs barrier layer formed on one side of the AlGaInAs QW, and another InAlAs barrier layer formed on the other side of the AlGaInAs QW. Each of the InAlAs barrier layers has a width being a half-wavelength of a light emitted by the AlGaInAs QW.

Abstract: An laser/modulator assembly includes a laser source, such as a distributed feedback (DFB) laser, and a modulator, such as an electro-absorption modulator (EAM), integrated along a common waveguide. The waveguide has a distal end bent to define an inner side of the bent waveguide. A low reflectivity facet is arranged at the distal end of the waveguide, and a mirror is arranged at the inner side of the distal end of the waveguide to prevent any back reflection into the EAM waveguide from said low reflectivity facet, and the lateral trenches typically associated therewith.