Abstract: A carrier substrate (100) with laser sources includes a transparent center substrate (20), an upper substrate (30) adhered to the center substrate having openings (40) formed therein to expose the center substrate on a first side, and a lower substrate (32) adhered to the center substrate on a second side opposite the first side and having openings (42) formed therein to expose the center substrate on the second side, the openings on the lower substrate corresponding to positions of the openings in the upper substrate. Frequency conversion elements (60) are disposed on the center substrate within the openings of the lower substrate. Laser dies (70) are aligned to the frequency conversion elements and coupled to the lower substrate to provide light though the frequency conversion elements and the center substrate during operation. Methods for fabrication are also disclosed.

Abstract: Disclosed is a laser light source apparatus including an excitation light source, a pair of resonator mirrors, and a resonator including the excitation light source and the pair of resonator mirrors. In the laser light source apparatus, one of two higher harmonic waves generated from the wavelength conversion element is output to the outside of the resonator, is returned to the wavelength conversion element by the retroreflection unit, the higher harmonic wave returned by the retroreflection unit is spatially displaced, is superposed on the other higher harmonic wave generated from the wavelength conversion element, and is output to the outside.

Abstract: A light source device includes a light source for emitting a laser beam, a power supply drive circuit for pulse-driving the laser beam, a wavelength conversion element for converting a wavelength of a laser beam into a predetermined wavelength, a photodetector for detecting an intensity of the laser beam emitted from the wavelength conversion element, and a control section that controls a drive condition of the laser beam emitted from the wavelength conversion element based on the intensity detected by the photodetector, wherein the control section includes an optimization setting section that, in response to the intensity of the photodetector in a present pulse drive condition being outside a predetermined range, controls a drive condition of the laser beam to extract an optimum pulse drive condition, and sets the extracted optimum pulse drive condition to the drive condition of the laser beam instead of the present pulse drive condition, and the optimization setting section, in extracting the optimum drive

Abstract: A laser apparatus includes a first surface-emitting laser device having an active region including at least one group of two or more quantum wells configured to generate photons and having an internal mirror configured to reflect the generated photons, and first and second opposing end cavity mirrors optically coupled to each other via the internal mirror of the first surface-emitting laser device and arranged to reflect the photons generated by the first surface-emitting laser device back to the first surface-emitting laser device to form a standing wave having a single antinode coincident with said at least one group of two or more quantum wells.

Abstract: An optical package includes a semiconductor laser, an adjustable mirror and a wavelength conversion device comprising a waveguide portion. The semiconductor laser, adjustable mirror, and wavelength conversion device are oriented to form an optical pathway between an output of the semiconductor laser and an input of the wavelength conversion device. The beam of the semiconductor laser is directed along the optical pathway and onto the adjustable mirror where the beam is reflected by the adjustable mirror onto the waveguide portion of the wavelength conversion device. The adjustable mirror may also be either thermally or mechanically deformable such that, when the adjustable mirror is deformed, the path of the beam along the optical pathway is altered thereby focusing the beam on the waveguide portion of the wavelength conversion device. The adjustable mirror may be adjusted such that the beam of the semiconductor laser is positioned on the waveguide portion of the wavelength conversion device.

Abstract: A device and method for producing a third harmonic signal from an optical pulse of wavelength k. In the device and method, an optical pulse at a wavelength k is incident on a material including at least one molecule having a formula D—U—A, where D is an electron donor group, A is an electron acceptor group, and ? is a conjugated structure having it bonds that connect D to A. The molecule exhibits a strong absorption band centered at a wavelengthko and a weakly absorbing region centered at a wavelength k, which is less than Xo. A wavelength k/2 has a value of about Xo, and a wavelength k/3 has a value of about X1. A third harmonic signal at k/3 is generated. From a measured third harmonic signal as a function of a time delay for separate optical pulses entering the material, at least one of a pulse width and a pulse shape of the optical pulse can be extracted. From a spectrally resolved third harmonic signal, a phase of the optical pulse can be extracted.

Abstract: A system, a structure, and a method for the generation of second harmonic light are provided. A laser system comprises a seed laser that produces a fundamental frequency light, and a nonresonant multiple pass nonlinear structure generates a second harmonic light using the fundamental frequency light. A second harmonic outcoupler outputs the second harmonic light from the laser system and a reflecting structure reflects a remaining portion of the fundamental frequency light back into the nonresonant multiple pass nonlinear structure to generate additional second harmonic light.

Abstract: A vertical external cavity surface emitting laser (VECSEL) in which the full-width at half maximum (FWHM) of laser light is reduced by two etalon filter layers to improve the efficiency of second harmonic (SHG) crystal is provided. The VECSEL includes: a laser chip for generating laser light; a first etalon filter layer formed on the laser chip; a second etalon filter layer that is formed on the first etalon filter layer and has a different refractive index than the first etalon filter layer; a first mirror separated from and disposed obliquely to the laser chip; a second mirror for reflecting the laser light reflected from the first mirror back to the first mirror to form a cavity with the laser chip; and an SHG crystal disposed along an optical path between the first and second mirrors and doubles the frequency of the laser light generated in the laser chip.

Abstract: A laser arrangement is provided, in which a Lyot filter arrangement is operative to effect single mode operation. The birefringent element of the Lyot filter arrangement has a cavity folding mirror on one side thereof and a polarizing element on another side thereof, such that the free spectral range of the Lyot filter is improved. Preferably, the Lyot filter arrangement and the laser gain material are located in different branches of the folded cavity.

Abstract: A laser system using ultrashort laser pulses is provided. In another aspect of the present invention, the system includes a laser, pulse shaper and detection device. A further aspect of the present invention employs a femtosecond laser and binary pulse shaping (BPS). Still another aspect of the present invention uses a laser beam pulse, a pulse shaper and a SHG crystal.

Abstract: The present invention relates to a large-sized and high-quality bismuth-zinc-borate (Bi.sub.2 ZnB.sub.2 O.sub.7) single crystal, preparation methods and applications thereof. The crystal has cross-sectional dimensions greater than one centimeter, a nonlinear optical effect of about 3-4 times that of KH.sub.2 PO.sub.4 (KDP), and an optical transmission wavelength range of 330-3300 nm. The crystal can be grown from a compound melt by a Czochralski method, a Kyropoulos method or a Bridgman method with the raw material being the synthetic compound Bi.sub.2 ZnB.sub.2 O.sub.7. Alternatively, the crystal may be grown from a high-temperature solution method by using Bi.sub.2 O.sub.3 as a flux. The crystal may be applied in nonlinear optical devices such as frequency doubling generators, frequency upconverters or downconverters, and optical parametric oscillators.

Abstract: An allowable temperature range satisfying phase matching conditions of a wavelength conversion device is widened. A wavelength conversion light source includes a semiconductor laser diode device (1) applied with an antireflection film (3), a lens (4) arranged opposite to the semiconductor laser diode device (1), an optical fiber (5) having a Bragg grating (6) arranged in a core thereof, and a wavelength conversion device (8) formed of a nonlinear optical crystal on which light from the semiconductor laser diode device (1) is incident. In the wavelength conversion light source, the semiconductor laser diode device (1) oscillates in coherent collapse mode.

Abstract: A laser light source includes a fundamental laser generator that generates a fundamental laser light, a wavelength conversion element that is made of a ferroelectric crystal with a periodically poled structure and converts the fundamental laser light to a laser light having a different wavelength, a holding member that holds at least a part of an element surface of the wavelength conversion element that crosses a polarization direction of the periodically poled structure, and an insulation layer that is provided between the holding member and the element surface. Electric resistivity of the insulation layer is 1×108 ?·cm or higher.

Abstract: The present invention provides a laser device having a high wavelength conversion efficiency and a wide wavelength width, and is suitable as a display light source. The laser device includes a fundamental wave generating section including a laser diode which has a plurality of luminous points and a bragg reflection structure, and generating a plurality of fundamental waves which has at least a pair of wavelengths different from each other, and a nonlinear optical element having a periodic polarization inversion structure, and generating harmonics corresponding to the plurality of fundamental waves, respectively.

Abstract: The present invention broadly comprises a device for supplying light at an illumination wavelength shorter than 300 nm. The device includes a first subassembly, having a light source for delivering light at a wavelength that is at least twice as long as the illumination wavelength; a second subassembly having at least one means for wavelength reduction; and a light guide that guides the light from the light source of the first subassembly into the second subassembly. The present invention also broadly comprises a method for supplying light at an illumination wavelength shorter than 300 nm.

Abstract: A vertical external cavity surface emitting laser is provided that is integrally mounted on a single heat sink together with a pump laser. In the surface emitting laser, a laser chip has a gain structure to emit light at a predetermined wavelength and it is disposed on a center portion of a top surface of a heat sink, an external mirror is spaced apart from the laser chip at a predetermined distance to transmit a portion of the light emitted from the laser chip to an outside and to reflect the remaining portion of the light to the laser chip, a pump laser is disposed on one side of a top surface of the heat sink to emit pump light in a horizontal direction for activating the laser chip, and a reflection mirror is disposed on the other side of the top surface of the heat sink opposite to the pump laser to reflect the pump light emitted from the pump laser to the laser chip.

Abstract: A laser oscillator of a laser processing apparatus includes a pair of terminating mirrors, between which a straight light path lies, and also includes a ¼ wavelength plate, an active medium, a higher harmonic wave separating/outputting mirror, a condensing lens, and a nonlinear optical crystal (wavelength converting crystal) that are lined up at given intervals on the light path between the terminating mirrors. The focus of the optical lens is determined to be near a reflection surface of the first terminating mirror, so that the optical lens is disposed to be separated from the reflection surface of the first terminating mirror by a distant approximately equal to a focal distance across the nonlinear optical crystal on the light path of an optical resonator.

Abstract: A laser light source device includes: a light source; an external resonator; a wavelength conversion element converting the wavelength of part of incident light having the first wavelength into the second wavelength which is different from the first wavelength; and an optical-path conversion element causing the light that has been converted into light of the second wavelength in the process of traveling to the light source due to reflection from the external resonator to be separated into a second optical-path different from the first optical-path, and emitting a second laser light of the second wavelength. In the laser light source device, and the height of the wavelength conversion element is greater than a distance between an optical-axis of the first laser light on an end face of the wavelength conversion element which is close to the external resonator and an optical-axis of the second laser light.

Abstract: A solid state laser medium is composed of Nd:YAG, the wavelength of a second harmonic wave is 557 to 559 nm and a free spectral range of a solid etalon falls in any of the values of a range A of 1.04 to 1.07 nm, a range B of 1.42 to 1.61 nm, a range C of 2.07 to 2.14 nm and a range D of 2.37 to 3.21 nm.

Abstract: A light source device includes a light source section for supplying a laser beam, a wavelength conversion element for converting a wavelength of the laser beam from the light source section, a temperature measuring section for measuring temperature, a temperature adjusting section for adjusting the temperature of the wavelength conversion element in accordance with a result of the measurement by the temperature measuring section, and a thermal diffusion section for diffusing heat to be conducted to the wavelength conversion element, wherein the thermal diffusion section is provided with a first surface disposed on a side of the wavelength conversion element and a second surface disposed on an opposite side to the first surface, and the temperature measuring section is provided to a part of the thermal diffusion section, which is located on a side of the second surface and has higher thermal conductivity of the thermal diffusion section between the side of the first surface and the side of the second surface t

Abstract: A tunable laser source has a first laser source to generate a low power continuous wave laser light having a wavelength ?1. A second laser source generates a low power continuous wave laser light having a wavelength ?2. A pump laser source generates a high power pulsed laser light having a wavelength ?0. A first optical parametric amplifier (OPA) receives the laser light having a wavelength ?1 and the laser light having a wavelength ?0 and generates a high power pulsed laser light having a wavelength ?1. A second optical parametric amplifier (OPA) receives the laser light having a wavelength ?2 and the laser light having a wavelength ?0 to and generates a high power pulsed laser light having a wavelength ?2. A difference frequency generator (DFG), receives the high power pulsed laser light having a wavelength ?1 and the high power pulsed laser light having a wavelength ?2 and provides a high power pulsed laser light having a wavelength ?3 wherein ?3=?1*?2/(?2??1).

Abstract: The invention disclosed herein relates to fibre lasers with intra-cavity frequency doubling. In one embodiment, the invention is directed to a fibre laser with intra-cavity frequency doubling characterized in that a non-linear crystal of type II phase matching is used to thereby enable operation of the fibre laser without selection of polarisation of the generated fundamental radiation. The non-linear crystal is oriented so as to minimise the walk-off angle of the second harmonic radiation, and a second dichroic mirror together with one of a plurality of focusing elements forms a telescopic reflector that provides for focusing and compensation of the spatial walk-off effect of the non-linear crystal.

Abstract: Photonic integrated circuits on silicon are disclosed. By bonding a wafer of compound semiconductor material as an active region to silicon and removing the substrate, the lasers, amplifiers, modulators, and other devices can be processed using standard photolithographic techniques on the silicon substrate. A silicon laser intermixed integrated device in accordance with one or more embodiments of the present invention comprises a silicon-on-insulator substrate, comprising at least one waveguide in a top surface, and a compound semiconductor substrate comprising a gain layer, the compound semiconductor substrate being subjected to a quantum well intermixing process, wherein the upper surface of the compound semiconductor substrate is bonded to the top surface of the silicon-on-insulator substrate.

Abstract: A laser system provides harmonic generation in a laser beam pulse. In another aspect of the present invention, a laser operably remits a laser pulse, a gaseous optical medium operably creates third or greater harmonic generation in the pulse, and a controller characterizes and compensates for distortions in the pulse. A further aspect of the present invention employs multiple optical media arranged to cause cascading harmonic generations in a laser pulse.

Abstract: A device for generating a high power frequency converted laser beam includes a nonlinear optical crystal having an entrance surface and a curved surface. The nonlinear optical crystal is configured to receive at least one laser beam at the entrance surface and provide a frequency converted beam through a frequency conversion process. The device also includes an optical coating coupled to the curved surface. The reflectance of the optical coating is greater than 50% at a wavelength of the frequency converted beam. Additionally, the far field divergence angle of the frequency converted beam increases after reflection off the curved surface. The device further includes a heat sink in thermal contact with the optical coating.

Abstract: A method is presented for shaping the spectral response of volume holographic grating elements by applying controlled thermal energy. The methods allow generating continuous or discontinuous grating periods from a fixed grating period. The methods are applicable to optical feedback into optical sources such as light emitting diodes, lasers and other general optical filtering applications.

Abstract: Laser equipment for outputting output lights having different wavelengths includes: a substrate; an excitation light generation element for emitting excitation lights including surface emitting laser elements and disposed on the substrate; and a light converter having a pair of second reflection layers and a solid laser medium layer, both of which provide a resonator. The solid laser medium layer is capable of generating lights having different peak wavelengths by receiving the excitation lights. The light converter is disposed on an output surface of the excitation light generation element.

Abstract: An intracavity-doubled laser device, includes a pumping laser-diode, a Nd:YAG amplifying medium stimulated by a laser beam with a fundamental wavelength emitted by the laser diode, the output face of the amplifying medium being cut at the Brewster angle for the fundamental wavelength and a birefringent frequency-doubling KNbO3 crystal. The device further includes an isotropic medium (3), inserted between the input face (8) of the birefringent crystal, the amplifying medium (2) and the birefringent crystal (4), being fixed to each other such as to provide a monolithic resonant cavity. Furthermore, the crystal axis “c” of the birefringent crystal includes a non-zero angle <c with relation to the orthogonal direction of polarization of the fundamental wave defined by the Brewster surface.

Abstract: Laser apparatus including two different, pulsed MOPAs, one having a fundamental wavelength of 1064 nm and the other having a fundamental wavelength of 1547 nm, provide trains of optical pulses. The 1064-nm pulses are frequency-quadrupled to a wavelength of 266 nm. The 1547-nm pulses are first mixed with the 266-nm pulses to provide pulses having a wavelength of 227 nm. The 227-nm pulses are then mixed with residual 1547-nm pulses from the first mixing to provide 198-nm output pulses of the apparatus.

Abstract: Laser apparatus including two different, pulsed MOPAs, one having a fundamental wavelength of 1064 nm and the other having a fundamental wavelength of 1564 nm, provide trains of optical pulses. The 1064-nm pulses are frequency tripled to 355 nm and the 1564-nm pulses are frequency doubled to 782 nm. The 355-nm and 782-nm pulses are mixed to provide 244-nm pulses. The 244-nm pulses are mixed with residual 1064-nm pulses to provide 198-nm output pulses of the apparatus. The output pulses can be either digitally modulated or amplitude modulated by controlling the phase relationship between the 1064-nm and 1564-nm pulses.

Abstract: A driving method for laser light source device includes: providing a laser light source device including a laser light source, a wavelength conversion element converting the wavelength of the light emitted from the laser light source, and a resonator mirror constituting a resonator structure between the laser light source and the resonator mirror; and driving the laser light source so as to cause the amount of light to decrease depending on the passage of time, compared with the amount of light by the initial driving of the laser light source.

Abstract: A wavelength converting laser device includes a laser diode producing laser light and including an optical resonator having a pair of facing reflectors, including a reflecting surface having a shape reducing loss in the optical resonator, with regard to a specific horizontal transverse mode of laser light as compared to the loss in the optical resonator for other horizontal transverse modes, and a wavelength converter for converting the laser light into harmonic light.

Abstract: A semiconductor laser module is disclosed, comprising a module carrier (20) having a mounting area (21), a pump device (1) arranged on the mounting area (21), a surface emitting semiconductor laser (40) arranged on the mounting area (21), and a frequency conversion device (6) arranged on the mounting area (21), wherein the mounting area (21) of the module carrier (20) has an area content of at most 100 mm2.

Abstract: A semiconductor laser component comprising a semiconductor laser chip (1) provided for generating radiation and an optical device comprising a carrier (7), a radiation deflecting element (8) arranged on the carrier and a mirror arranged on the carrier is proposed, wherein the mirror is formed as an external mirror (9) of an external optical resonator for the semiconductor laser chip (1), the radiation deflecting element is arranged within the resonator, the radiation deflecting element is formed for deflecting at least a portion of a radiation (13, 160) that is generated by the semiconductor laser chip (1) and reflected by the external mirror, the carrier has a lateral main extension direction, and the semiconductor laser chip (1) is disposed downstream of the carrier in a vertical direction with respect to the lateral main extension direction.

Abstract: An optical apparatus comprising a gain medium exhibiting polarisation dependent absorption along two axes, the gain medium having a weakly absorbing axis and a strongly absorbing axis, an optical pump source arranged to direct pump light towards a first face of the gain medium such that the pump light entering the gain medium has a component of its polarisation parallel to the weakly absorbing axis, a polarisation modifying apparatus and one or more reflectors which are together arranged to modify the polarisation of pump light which exits the gain medium through a second face of the gain medium, and to direct the pump light with modified polarisation back towards said second face of the gain medium.

Abstract: An external-cavity laser light source apparatus includes a plurality of laser light emission modules, each including a first mirror, a second mirror reflecting fundamental wave light toward the first mirror, a lasing medium emitting the fundamental wave light, a wavelength converter performing wavelength conversion on incident fundamental wave light to produce first converted light and non-converted light. A third mirror reflects second converted light to produce reflected, converted light, the second converted light being wavelength-converted light produced when the non-converted light is reflected off the second mirror and incident again on the wavelength converter. The plurality of modules are disposed so that the first converted light beams exit the modules in the same direction and the reflected, converted light beams exiting the modules approach each other. A deflector may deflect the reflected, converted light beams exiting from the modules in the same exit direction as the first converted light.

Abstract: A wavelength converting laser includes: a fundamental-wave laser light source emitting a fundamental wave; and a wavelength conversion element converting the fundamental wave emitted from the fundamental-wave laser light source into a converted wave having a different wavelength from the fundamental wave, in which: a pair of fundamental-wave reflecting surfaces is arranged on both end sides of the wavelength conversion element in the directions of an optical axis thereof and reflects the fundamental wave to thereby pass the fundamental wave a plurality of times inside of the wavelength conversion element, and at least one of the fundamental-wave reflecting surfaces transmits the converted wave; and the pair of fundamental-wave reflecting surfaces allows the fundamental wave to cross inside of the wavelength conversion element and form a plurality of light-concentration points at places different from a cross point of the fundamental wave.

Abstract: In a surface emitting semiconductor laser comprising a semiconductor chip (1), a first resonator mirror (4) and at least one further resonator mirror (8) which is arranged outside the semiconductor chip (1) and forms with the first resonator mirror (4) a laser resonator having a resonator length L and a pump laser (10) which, for optically pumping the semiconductor laser (1), radiates pump radiation (14) having a pump power into the semiconductor chip (1), the pump power is modulated with a modulation frequency fp and the resonator length L is adapted to the modulation frequency fp.

Abstract: A wavelength conversion optical device is provided with a fundamental wave light source (301) which outputs a fundamental wave (L11) including a P polarized light and an S polarized light that are perpendicular to each other, and two wavelength conversion mechanisms (303a, 303b) each having a polarization inversion formation part which wavelength-converts the fundamental wave (L11) to generate harmonic waves, and the first-stage wavelength conversion mechanism (303a) performs wavelength conversion of the P polarized light of the fundamental wave (L11) while the second-stage wavelength conversion mechanism (303b) performs wavelength conversion of the S polarized light of the fundamental wave (L11), whereby absorption of a second harmonic wave (green light) due to a third harmonic wave (ultraviolet light) is reduced, and stability and reliability of the wavelength-converted light output are enhanced, thereby providing a wavelength conversion optical device which can output a wavelength-converted light capable o

Abstract: A laser and monitoring system is provided. In another aspect of the present invention, the system includes a laser, pulse shaper and detection device. A further aspect of the present invention employs a femtosecond laser and binary pulse shaping (BPS). Still another aspect of the present invention uses a laser beam pulse, a pulse shaper and a SHG crystal. In yet another aspect of the present invention, a multiphoton intrapulse interference phase scan (hereinafter “MIIPS”) method is used to characterize the spectral phase of femtosecond laser pulses and to correct them. A further aspect of the system of the present invention is employed to monitor environmental chemicals and biological agents, including toxins, explosives, and diseases.

Abstract: An optically pumped semiconductor apparatus having a surface-emitting semiconductor body (1) which has a radiation passage area (1a) which faces away from a mounting plane of the semiconductor body (1), and an optical element (7) which is suitable for directing pump radiation (17) onto the radiation passage area (1a) of the semiconductor body (1).

Abstract: The present invention concerns a fiber device capable of shifting an oscillation wavelength of a fundamental wave of a laser emitted therefrom, and is provided with a laser cavity including a fiber containing a laser active substance and having at least one fiber grating formed therein, and a laser light source for introducing an excitation light to the fiber. The laser cavity is constructed to be able to shift the oscillation wavelength of the fundamental wave of the laser emitted therefrom.

Abstract: An apparatus for producing coherent, pulsed ultraviolet light with pulse durations that range between 1 ps and 1 ?s includes one or more source lasers in the visible or near-infrared frequency range. The apparatus also includes one or more FC stages, at least one of the one or more FC stages including a nonlinear FC device and one or more optical elements. The optical elements include a reflector, a focusing element, a polarization-controlling optic, a wavelength separator, or a fiber optic component. The FC device includes a huntite-type aluminum double borate nonlinear optical material configured to produce FC light having a wavelength between 190 and 350 nm and a composition given by RAl3B4O12, where R comprises one or a plurality of elements {Sc, La, Y, Lu}. The nonlinear optical material is characterized by an optical transmission greater than 70% over the wavelength range of 190 to 350 nm.

Abstract: A laser light source is disclosed consisting of first and second lasers that respectively generate laser beams of wavelengths ?1 and ?2. Wavelength ?1 is in the range of 0.9-1.0 ?m. A nonlinear optical crystal uses the laser beams of wavelengths ?1 and ?2 as inputs, and outputs a coherent beam having a wavelength ?3 of a difference frequency that satisfies a relationship of 1/?1?1/?2=1/?3. The nonlinear optical crystal has a periodically poled structure of a single period. The wavelength ?3 of the difference frequency varies between 3.1 ?m and 2.0 ?m when the wavelength ?2 varies between 1.3 ?m and 1.8 ?m.

Abstract: Provided is a Vertical External Cavity Surface Emitting Laser (VECSEL). The VECSEL includes a semiconductor chip, a pump laser, a narrow bandwidth polarization filter, an external mirror, and a Second Harmonic Generation (SHG) element. The semiconductor chip includes an active layer generating light having a wavelength and a reflective layer reflecting the light generated in the active layer. The pump laser emits a pump beam for exciting the active layer. The narrow bandwidth polarization filter is formed on the semiconductor chip and polarizes the light. The external mirror faces the active layer, amplifies the light emitted from the active layer by repeatedly reflecting the light toward the reflective layer, and outputs the amplified light out of the VECSEL. The SHG element is disposed between the narrow bandwidth polarization filter and the external mirror and converts the wavelength of the light.

Abstract: A laser module includes a Distributed Bragg Reflector semiconductor laser light source that is operable to generate a light beam having a stabilized frequency and spatial mode. A periodically poled, nonlinear optical device is operable to receive the light beam, and frequency-convert the light beam.

Abstract: After forming domain inverted layers 3 in an LiTaO3 substrate 1, an optical waveguide is formed. By performing low-temperature annealing for the optical wavelength conversion element thus formed, a stable proton exchange layer 8 is formed, where an increase in refractive index generated during high-temperature annealing is lowered, thereby providing a stable optical wavelength conversion element. Thus, the phase-matched wavelength becomes constant, and variation in harmonic wave output is eliminated. Consequently, with respect to an optical wavelength conversion element utilizing a non-linear optical effect, a highly reliable element is provided.

Abstract: A compact and efficient ultraviolet laser source based on a optically-pumped solid-state or fiber laser that produces near-infrared output light suitable for nonlinear frequency conversion. The infrared laser output is frequency tripled or quadrupled to produce light in the ultraviolet wavelength range (200 nm to 400 nm). The novel technology is the use of highly efficient periodically poled nonlinear crystals, such as stoichiometric and MgO-doped lithium tantalate and lithium niobate. As opposed to conventional frequency-converted UV laser sources, which have high power consumption, high cost, and low efficiency, the laser sources of this invention utilize high efficiency nonlinear conversion provided by periodically poled materials and allow lower-cost architectures without additional focusing lenses, high power pump diodes, etc.

Abstract: A semiconductor laser source is provided wherein the wavelength selective section of the laser diode comprises a P+ type current confinement layer and first and second sets of interdigital heater electrodes formed over the current confinement layer. Individual electrode digits of the first and second sets of interdigital heater electrodes alternate in succession along a direction of optical propagation defined by the active waveguide layer of the laser diode. The first set of interdigital heater electrodes are positively or negatively biased relative to the laser diode cathode and relative to the second set of interdigital heater electrodes such that the relative bias is either less than the forward bias turn-on voltage of the P-N junction or has an absolute value less than the reverse break-down voltage of the P-N junction.

Abstract: The invention discloses an actively Q-switched laser with an intracavity nonlinear coupler in which a stable optical frequency converted output is generated. A Gain Fluctuation Insensitivity Condition is defined and described for several examples. The nonlinear coupler with a coupling level which satisfies this Condition permits stable laser operation with minimal interaction between pulses, even when the pulses are clipped by the Q-switch. Thus, the output pulse duration and repetition frequency of the disclosed laser can be varied over a large range substantially independent of laser gain level and dynamics. Second and third harmonic optical frequency conversion is demonstrated, although the disclosed laser is applicable to other optical frequency conversion regimes as well.