Abstract: Disclosed is a broadband light source (BLS) necessary to implement wavelength-locked Fabry-Perot (FP) laser diodes (LDs) applicable to an optical subscriber network The BLS is based on a method using mutual injection of low-cost FP LDs and a method using FP LDs undergoing chirping. A power level of a light emitting diodes (LED), an erbium-doped fiber amplifier (EDFA), or a super luminescent diode (SLD) used as the conventional BLS is low and its cost is high, such that the conventional BLS is inefficient. However, the present invention can easily implement a low-cost BLS using proposed FP LDs.

Abstract: In the repair method and the apparatus, geometry data of a defective section is extracted from defect image data obtained by picking up an image of a defective section on a glass substrate 2; the angle of each the micromirror of a DMD unit 16 is controlled in high speed in accordance with the geometry data; and the cross-sectional shape of the laser light r reflected by these micromirrors are conformed substantially to the shape of the defective section to be illuminated to the defective section.

Abstract: After forming domain inverted layers 3 in an LiTaO3 substrate 1, an optical waveguide is formed. By performing low-temperature annealing for the optical wavelength conversion element thus formed, a stable proton exchange layer 8 is formed, where an increase in refractive index generated during high-temperature annealing is lowered, thereby providing a stable optical wavelength conversion element. Thus, the phase-matched wavelength becomes constant, and variation in harmonic wave output is eliminated. Consequently, with respect to an optical wavelength conversion element utilizing a non-linear optical effect, a highly reliable element is provided.

Abstract: Systems and methods for optically pumping alkali-metal atoms using Coherence Population Trapping (CPT) resonances are disclosed. An illustrative push-pull optical pumping system for inducing CPT resonances in a resonance cell containing an admixture of alkali-metal atoms and one or more buffer gasses may include a laser assembly adapted to produce alternating orthogonally polarized light, and at least one DC current source adapted to output a constant-intensity carrier current signal for inducing laser emission from the laser assembly at a carrier wavelength of the alkali-metal atoms. An RF modulated signal outputted from an RF modulation source can be rectified, split, and phase-shifted for inducing a time-dependent polarization of the laser light that can be used to enhance CPT resonances.

Abstract: A modulation light source capable of maintaining thermal stability of a gain part is provided. A modulation light source includes a DBR laser having a DBR part, a phase part and a gain part, a light wavelength conversion device that receives a fundamental wave from the DBR laser and from which an SHG light is emitted, and a control means for controlling the DBR laser. A substantially constant current is supplied to the gain part for a modulation time period of a PWM signal. At least one of the DBR part and the phase part is controlled for modulation using a current based on the PWM signal.

Abstract: A system is used to perform fast and slow applications, for example fast application can be pulse trimming. The system includes a radiation source, an electro-optical modulator, and a beam splitter. The radiation source is configured to generate a polarized beam of radiation. The electro-optical modulator, formed of crystalline quartz, is configured to modulate the beam of radiation. The beam splitter is configured to direct a first portion of the beam to a beam dump and to form an output beam from a second portion of the beam.

Abstract: A directly modulated distributed feedback (DFB) laser with improved optical field uniformity and mode stability may include a laser cavity and a distributed reflector and/or external reflectors. The distributed reflector may be a Bragg grating and may extend asymmetrically over a only portion of the laser cavity. The external reflectors may themselves be distributed Bragg reflectors and may have unequal reflectances. Optical field uniformity may be improved by adjusting the length and/or position of the distributed reflector in the laser cavity. Optical field uniformity may be improved by adjusting a coupling strength parameter, which is a function of a coupling coefficient, ?, and the length of the distributed reflector.

Abstract: The wavelength of light emitted by a laser and modulated by a frequency response modulator is determined from the power of the emitted light and the current drawn by the modulator. From the temperature and current applied to the modulator and the optical power of the emitted light; the wavelength of the beam of light is determined as a function of a ratio of the current and power for each temperature of operation. As the wavelength of the emitted light shifts, for example as the laser ages or the laser temperature shifts, the inventive methods and devices then detect the wavelength shift and implement any necessary adjustments in the operating conditions of the laser diode. For example, a thermoelectric cooler can be used to heat or cool the laser diode as necessary to thereby adjust the wavelength of the emitted light.

Abstract: An electro-absorption semiconductor optical modulator comprises an n-type cladding layer of III-V compound semiconductor; a p-type cladding layer of III-V compound semiconductor; and an active region. The active region is provided between the n-type cladding layer and the p-type cladding layer, and has a quantum well structure. The quantum well structure includes plural semiconductor units, each of which has a well layer, a barrier layer and an interlayer. The interlayer is made of material of a bandgap between a bandgap of the well layer and a bandgap of the barrier layer, and the well layer is compressively strained. The well layer, interlayer and barrier layer are sequentially arranged in each semiconductor unit in a direction from the p-type cladding layer to the n-type cladding layer.

Abstract: A technique for reducing speckle in a projected image includes forming an image using a plurality of laser light emitters. An input to the plurality of laser light emitters is non-mechanically perturbed to a degree sufficient to disrupt wavefront uniformity across the array of laser light emitters.

Abstract: In an optical modulation device (10) having an electrical/optical interaction region (11), an electrical signal line (3) is connected to an electrical signal input terminal (2a), another electrical signal line (4a) is connected to an electrical signal output terminal (2b), and a reflection control circuit (5) is connected to the other electrical signal line (4a). This reflection control circuit (5) is an impedance element which positively reflects an output electrical signal from the interaction region (11) of the optical modulation device (10). This makes it possible to raise the upper-limiting frequency at which the E/O (Electrical-to-Optical) response characteristic can be improved, and improve the flatness of the frequency characteristic of the E/O response without deteriorating the absolute value of the E/O response.

Abstract: A photonic integrated circuit (PIC) chip comprising an array of modulated sources, each providing a modulated signal output at a channel wavelength different from the channel wavelength of other modulated sources and a wavelength selective combiner having an input optically coupled to received all the signal outputs from the modulated sources and provide a combined output signal on an output waveguide from the chip. The modulated sources, combiner and output waveguide are all integrated on the same chip.

Abstract: Provided is a laser display apparatus in which speckle can be suppressed. The laser display apparatus includes: a laser comprising a first mirror and a second mirror that are separated by a cavity distance and form a cavity; and a spatial modulator modulating light transmitted through the first mirror of the laser to display an image on a screen, wherein, when a coherence length lc and an effective reflectivity R are defined by the following equation: l c = 2 ? d ? ? ? ? ? R 1 / 2 1 - R R = R 1 × R 2 [ Equation ] where d is the cavity distance of the laser, R1 is the reflectivity of the first mirror, and R2 is the reflectivity of the second mirror, the coherence length lc satisfies the following inequality: 0<lc?0.85[cm].

Abstract: Described are an optical transmitter and a method for generating a single sideband optical signal. The method includes generating a data signal at a first power level and at a second power level with a predetermined ratio being defined between the power levels. The data signal at the first power level is applied to a phase module disposed in a laser cavity of a semiconductor laser to generate a frequency modulated laser signal having a double sideband. The intensity of the frequency modulated laser signal is modulated in response to the data signal at the second power level to yield the single sideband optical signal. Optical transmitters implementing the method have an increased manufacturing yield and reliability, a lower fabrication cost and a decreased size compared to other optical single sideband optical transmitters.

Abstract: Systems and methods for continuously compensating a modulation current of a laser. A temperature compensation circuit has circuitry with a positive temperature coefficient connected with circuitry having a negative temperature coefficient. The temperature compensation circuit generates a temperature dependent reference current that is mirrored to a gain circuit. The gain circuit provides variable gain. The gain circuit also provides inputs that can be set to select a particular gain. The output of the gain circuit, which changes as temperature affects the reference current, is used to compensate the modulation current of the laser.

Abstract: A method of tuning optical components integrated on a monolithic semiconductor chip having a plurality of first optical components integrated on the chip with each fabricated to approximate an emission wavelength along a given wavelength grid and together forming a first optical component wavelength grid. A second optical component is integrated on the chip with and optically coupled to the group of first optical components. The second optical component has a second optical component wavelength grid approximating the given wavelength grid where at least one emission peak along the second optical component wavelength grid is within an acceptable wavelength tolerance range of a particular first optical component of the first optical component wavelength grid but not the same as a corresponding emission wavelength of a particular first optical component.

Abstract: Laser processing methods, systems and apparatus having a super-modulating power supply or pumping subsystem and high beam quality (i.e., brightness) are disclosed. The methods, systems and apparatus have significant benefits, improved operation characteristics and material processing capability over currently available methods, systems and apparatus. In at least one embodiment, the beam quality of a high power solid state laser is improved in the presence of thermal lensing. High power laser cutting, scribing, and welding results are improved with a combination of modulation and high beam quality while providing for improved processing speeds.

Abstract: The present invention relates to an optical transceiver that installs an optical transmitting assembly and an optical receiving assembly both are compact, inexpensive, and capable of operating at a high speed. The optical transmitting assembly of the present invention provides the metal bottom that installs the thermoelectric cooler thereon and the semiconductor optical device is mounted, via the insulating substrate, on the thermoelectric cooler. The first and second multi-layered ceramic substrates are provided to surround the thermoelectric cooler. The DC signal or the low-frequency signal for the thermoelectric cooler and the semiconductor optical device is supplied through the first ceramic substrate, while the high frequency signal for the semiconductor device, with the complementary signal having the opposite phase to the high frequency signal, is provided to the semiconductor device through the inner layer of the second ceramic substrate and the insulating substrate.

Abstract: Methods and apparatus for optical isolation in high peak power fiber-optic systems prevent damage to a facet within a fiber-optic isolator caused by back-reflected light from, for example, an optical amplifier. Preventing damage to the facet may include expanding a mode area of the back-reflected light and/or reducing a change in refractive index.

Abstract: An apparatus and method for high speed phase modulation of optical beam. For one embodiment, an apparatus includes an optical waveguide having adjoining first and second regions disposed in semiconductor material. The first and second regions have opposite first and second doping types, respectively. First, second and third higher doped regions of semiconductor material outside an optical path of the optical waveguide are also included. The first higher doped region has the first doping type and the second and third higher doped regions have the second doping type. The first, second and third higher doped regions have higher doping concentrations than doping concentrations within the optical path of the optical waveguide. The second and third higher doped regions are symmetrically adjoining and coupled to respective opposite lateral sides of the second region. The first higher doped region is asymmetrically adjoining and coupled to only one of two opposite lateral sides of the first region.

Abstract: An arrangement for generating a high power optical radar beam. The arrangement includes first and second laser sources each having a first laser for generating an optical beam of a relatively low frequency F1 and a second laser for generating an optical beam of relatively higher frequency F2. Each laser source provides a first optical beam of frequency F2 and a second optical beam of frequency F1+F2. The arrangement also includes first and second waveform generators each having a modulator and a mixer. A first waveform generator receives the optical beams from the first laser source and a modulation signal for modulating the F1+F2 optical beam. The first waveform generator is operative to provide an output optical beam of frequency F1 having all of the modulation applied to the optical beam of frequency F1+F2.

Abstract: The present invention is directed to a novel arrangement of optical devices for the rapid patterning of laser profiles used for desorption and/or ionization sources in analytical mass spectrometry. Specifically, the new optical arrangement provides for a user-defined laser pattern at the sample target that can be quickly changed (on a microsecond timescale) to different dimensions (or shapes) for subsequent laser firings.

Abstract: A photonic integrated circuit (PIC) chip comprising an array of modulated sources, each providing a modulated signal output at a channel wavelength different from the channel wavelength of other modulated sources and a wavelength selective combiner having an input optically coupled to received all the signal outputs from the modulated sources and provide a combined output signal on an output waveguide from the chip. The modulated sources, combiner and output waveguide are all integrated on the same chip.

Abstract: An apparatus and method for linewidth broadening applied to a laser that emits a light having an output frequency ? and an emission linewidth ?E. The apparatus is equipped with an electro-optic modulator for intercepting the light and a noise generator for driving the electro-optic modulator with a radio-frequency (RF) noise signal spanning a frequency range selected to broaden the emission linewidth ?E of the light passing through the electro-optic modulator to a broadened linewidth ?B. The noise spectrum of the noise signal exhibits a continuous frequency range and can be flat or sloping. The range extends from low frequency ?L set below the emission linewidth ?E of the light to a high frequency ?H set above the emission linewidth ?E of the light. The electro-optic modulator can be selected from among many suitable devices including optical crystals. Further broadening can be achieved by employing one or more secondary EOMs operating in resonant or non-resonant modes.

Abstract: A method and apparatus are provided to modulate a beam of laser light. An acousto-optic modulator (AOM) is positioned to receive continuous-wave (CW) laser light at an angle approximating the Bragg angle. Fine tuning of the modulation is then used to compensate for any variations in the actual angle from the Bragg angle. A photodiode provides a feedback signal that may be used to tune or adjust the operation of the AOM. The photodiode is positioned to receive laser light at the first order diffraction and provide a signal indicative of the magnitude of the first order diffraction laser light produced by the AOM. The photodiode signal is coupled to an RF frequency generator so that the RF frequency may be adjusted to vary the acoustic wave in the AOM to compensate for any variations in the Bragg angle.

Abstract: A device for emission of laser radiation includes at least one semiconductor laser having a resonator and a pumped active zone disposed within the resonator. The zone is subdivided into at least two spatially separated active zones by free-radiation regions without lateral wave guidance. Preferably, the laser is at least two semiconductor lasers disposed in series, a row, or a line, each having an antireflection coating on at least one side. The lasers have outer mirror elements at an end of the lasers disposed in series and the outer mirror elements form the resonator. A laser configuration includes two opposite semiconductor lasers from which a fundamental mode is in each case imaged into the active zone of the opposite semiconductor laser. The laser configuration has an emerging laser beam with little divergence.

Abstract: An equipment status monitoring system having at least one multi-modal resonator included as a part of a semiconductor processing system and a power source coupled to the at least one multi-modal resonator. The power source is configured to produce a microwave excitation signal corresponding to at least one mode of the multi-modal resonator and emit the microwave excitation signal into the semiconductor processing chamber. The system includes a detector coupled to the at least one multi-modal resonator and configured to measure the excitation signal. The system includes a control system connected to the detector and configured to provide a comparison of at least one measured excitation signal with a normal excitation signal corresponding to a normal status.

Abstract: The present invention relates to wavelength tunable DBR semiconductor laser devices in which light waves generated from a plurality of laser portions (or laser channels) are combined. This type of semiconductor laser device requires that the laser channels together cover an entire desired wavelength range, allowing the oscillation wavelength to be continuously varied over this range. However, to accomplish this, it is necessary to employ highly accurate crystal growth and process techniques. Furthermore, the length of the gain region must be reduced to increase the range over which the oscillation wavelength can be continuously varied, making it difficult to achieve laser oscillation. Two laser channels operate in combination, and a combiner combines the light waves emitted from these laser portions (or laser channels) so as to cover one entire wavelength range.

Abstract: A method and apparatus for compensating for temperature characteristics of a laser diode are disclosed. The laser diode may be used in a transmitter unit of a transceiver for optical signal transmission. The transceiver includes the laser diode and a monitor photodiode. In such a method, a modulation current is derived from an input voltage and arbitrary variables. Variations of overall modulation resistance values corresponding to an operation temperature range are evaluated by a relation between the modulation current and the overall modulation resistance, and the overall modulation resistance values are determined according to the variations. Also, variations of overall bias resistance values corresponding to the temperature range are evaluated by a current Impd of the photodiode, which is derived at specific optical power arbitrarily chosen in the temperature range. The overall bias resistance values are determined according to the variations.

Abstract: A system and method for biasing the outputs of a laser modulator driver while allowing for high speed operation. A differential amplifier type modulator driver is provided which uses a reduced number of components in the high speed path. Additionally, the modulator driver may be constructed with a distributed output stage.

Abstract: The present invention provides a tunable laser with a compact form factor and precise tuning to any selected center wavelength of a selected wavelength grid. A novel tuning technique is disclosed which includes tuning the laser to selected passbands, as well as tuning the optical path length of the laser utilizing a variety of tuning elements and a feedback circuit working together.

Abstract: A diode laser for providing a high-energy coherent light beam suitably includes an array of laser diodes, each producing a laser beamlet. The beamlets are provided to a spatial light modulator (SLM) with an array of pixels, each pixel corresponding to a portion of the light beam. The phase variation across the light beam wavefront is monitored at a detector, and a feedback signal indicative of the phase variation is provided to control electronics. The control electronics process the feedback signal to modulate a local index of refraction within one or more pixels of the SLM to reduce the variation in phase across the beam wavefront. Because phase variations across the beam wavefront are reduced, relatively large diode arrays can be formulated, thereby resulting in relatively high powered diode lasers.

Abstract: An optical transmitter comprises a monolithic transmitter photonic integrated circuit (TxPIC) chip that includes an array of modulated sources formed on the PIC chip and having different operating wavelengths approximating a standardized wavelength grid and providing signal outputs of different wavelengths. A wavelength selective combiner is formed on the PIC chip having a wavelength grid passband response approximating the wavelength grid of the standardized wavelength grid. The signal outputs of the modulated sources optically coupled to inputs of the wavelength selective combiner to produce a combined signal output from the combiner. A first wavelength tuning element coupled to each of the modulated sources and a second wavelength tuning element coupled to the wavelength selective combiner. A wavelength monitoring unit is coupled to the wavelength selective combiner to sample the combined signal output.

Abstract: Systems and methods for biasing an externally modulated laser. An inductorless bias T network is provided that includes a terminating resistor in series with a capacitor. The capacitor is an open circuit for a bias signal and a virtual ground for an RF signal. Thus, the RF signal is terminated by the terminating resistor without dissipating the bias signal through a ground return path of the RF signal. Using a charge pump inverter, a positive supply can be used to positively bias a laser and negatively bias the external modulator through the terminating resistor. A negative power supply is not required. A swing voltage provided by the RF signal causes the external modulator to modulate the light emitted by the laser.

Abstract: An electro-absorption light intensity modulator device is provided that comprises a first and a second layer disposed relative to the first layer so as to provide a light-absorbing optical confinement region. The first layer comprises a first insulator layer, and the light-absorbing optical confinement region comprises at least one quantum-confined structure. The at least one quantum-confined structure possesses dimensions such, that upon an application of an electric field in the at least one quantum-confined structure, light absorption is at least partially due to a transition of at least one carrier between a valence state and a conduction state of the at least one quantum-confined structure. A method is also provided for fabricating an electro-absorption light intensity modulator device.

Abstract: An electro-optic delay line frequency discriminator has an optical signal source providing first and second optical signals that are directed along first and second paths, respectively. In the first path, the first optical signal is converted to a first corresponding optical signal that corresponds to an electrical input signal, and the first corresponding optical signal is then delayed. In the second path, the second optical signal is delayed, and the delayed second optical signal is then converted to a second corresponding optical signal that corresponds to the electrical input signal. The first and second corresponding optical signals are converted to first and second corresponding electrical signals, respectively; and a detector, responsive to the first and second corresponding electrical signals, provides an electrical output signal from the discriminator. Optical source relative intensity noise (RIN) is canceled out and does not degrade the signal-to-noise ratio of the discriminator output.

Abstract: A method and assembly for frequency stabilization of an optical signal especially from a laser, the assembly (11) comprising beam splitter (15), a passive frequency discriminator (16), and a pair of photodiodes (17 & 18). The beam splitter (15) in use receives a collimated optical beam (B) and diverts a sample beam (B1) which is directed towards the discriminator (16) which transmits a portion (B2) of said sample beam to one of the photodiodes (17) and reflects a second portion (B3) of said sample beam to the other photodiode (18). A control signal (S3) is derived from the respective intensities of the transmitted and reflected portions of the sample beam, and utilized to operate the electronic control to adjust the frequency of the laser output signal, if required, to maintain a specified frequency.

Abstract: Electro-optic amplitude varying elements (AVEs) or electro-optic multi-function elements (MFEs) are integrated into signal channels of photonic integrated circuits (PICs) or at the output of such PICs to provide for various optical controlling and monitoring functions. In one case, such PIC signal channels may minimally include a laser source and a modulator (TxPIC) and in another case, may minimally include a photodetector to which channels, in either case, an AVE or an MFE may be added.

Abstract: A light emitting element driving circuit drives a surface-emitting element, and the light emitting element driving circuit is equipped with a bias current driving circuit that supplies a generally constant bias current to the surface-emitting element, a modulation current driving circuit that supplies to the surface-emitting element a modulation current superimposed on the bias current, and a temperature detection circuit that detects the temperature of the surface-emitting element, wherein the modulation current driving circuit decreases the current amount of the modulation current, when the temperature detected rises. The bias current driving circuit may preferably supply the bias current to the surface-emitting element through a coil, and the modulation current driving circuit may preferably supply the modulation current to the surface-emitting element through a capacitor.

Abstract: Digital control of frequency and/or amplitude modulation techniques of an intracavity and/or extracavity AOM (60) facilitate substantially full extinction of a laser beam (90) to prevent unwanted laser energy from impinging a workpiece (80); facilitate laser pulse amplitude stability through closed-loop control of pulse-to-pulse laser energy; facilitate beam-positioning control including, but not limited to, closed-loop control for applications such as alignment error correction, beam walk rectification, or tertiary positioning; and facilitate employment of more than one transducer on an AOM (60) to perform any of the above-listed applications.

Abstract: Even for a driving impedance of 25 ?, high transmission waveform quality of an optical transmission module is maintained using an optical modulator element designed for a driving impedance of 50 ?. The above can be achieved by adopting an optical module 100 that includes an input electrode for electrical signals, an optical modulator element for modulating laser light using the electrical signals, a termination resistance element, a first bonding wire for connecting the input electrode and the optical modulator element, a second bonding wire for connecting the optical modulator element and the termination resistance element, and a third bonding wire for connecting the input electrode and the termination resistance element.

Abstract: A phase modulation circuit for outputting a modulated signal of an input signal which has been modulated to a desired phase. The circuit includes a light emitting element for emitting light according to an input signal and outputting a modulated signal, a bias current source for supplying in advance to a light emitting element a bias current smaller than the light emitting threshold current of the light emitting element, a bias current control unit for controlling the bias current according to a desired phase for supplying to the light emitting element a modulation current for causing the light emitting element to emit light according to the input signal, and a modulation current control unit for controlling the modulation current according to the phase shift resolution in the phase modulation circuit. The modulation current control unit controls modulation current further according to the phase range in the phase modulation circuit.

Abstract: An electra-absorption modulator and electra-absorption modulated laser are described that include a semiconductor layer having an electrically controllable absorption. The material composition of the semiconductor layer is chosen so that the semiconductor layer is substantially transparent to light propagating through the semiconductor layer when a substantially zero or a reverse bias voltage is applied across the semiconductor layer at operating temperatures of the electro-absorption modulator that are substantially greater than 25 degrees Celsius.

Abstract: A method of evaluating a laser comprises providing a current into the laser and measuring a voltage output of an electroabsorptive modulator (EAM) coupled to the laser. A device under test includes a laser, and an electroabsorptive modulator (EAM), wherein said EAM monitors an output of said laser.

Abstract: An optical pulse train generator (2) for use in the transmission of high speed optical data in a return-to-zero (RZ) signalling format is described.

Abstract: There is described a method of characterizing a short laser pulse, the method comprising the steps of obtaining root-mean-square widths of the pulse through second order moments of the pulse; obtaining a spectral width of the pulse using the root-mean-square widths; obtaining a root-mean square temporal width of the pulse; and defining a Pulse Quality Factor proportional to a product of the spectral width and the temporal width. This approach does not require complete characterization of laser pulses and eliminates the need of any assumption to interpret autocorrelation traces. The method can be applied to pulses of arbitrary shape.

Abstract: A method of operating an array of integrated laser sources formed as an integrated array on a single substrate in a photonic integrated circuit (PIC) where the laser sources are designed for operation at different targeted emission wavelengths which, in toto, at least approximate a grid of spatial emission wavelengths. A first wavelength tuning element is associated with each laser source and is adjusted over time so that each laser source maintains its targeted emission wavelength. As an alternative, the drive current to each laser source may be initially set so that each laser source operates at its targeted emission wavelength. Thereafter, adjustments to retune the laser sources to their targeted emission wavelengths are accomplished by the first wavelength tuning elements. The outputs of the laser sources may be combined via an optical combiner to produce a single combined output from the PIC.

Abstract: An apparatus and method generating an optical pulse of picosecond class (having a high duty ratio), which accurately and stably operates at an arbitrary repetition frequency, has a high OSNR, and is not restricted by an RF modulation frequency, are provided. New modulation spectrum components are generated by performing phase modulation for light output from a single wavelength laser light source with an optical phase modulator. The phases of the modulation spectrum components are aligned by a phase adjuster, so that a pulse wave in a time domain is generated.

Abstract: A method and apparatus operates an array of laser sources as an integrated array on a single substrate or as integrated in an optical transmitter photonic integrated circuit (TxPIC) maintaining the emission wavelengths of such integrated laser sources at their targeted emission wavelengths or at least to more approximate their desired respective emission wavelengths. Wavelength changing elements may accompany the laser sources to bring about the change in their operational or emission wavelength to be corrected to or toward the desired or target emission wavelength. The wavelength changing elements may be comprise of temperature changing elements, current and voltage changing elements or bandgap changing elements.

Abstract: A method of tuning optical components integrated on a monolithic chip, such as an optical transmitter photonic integrated circuit (TxPIC), is disclosed where a group of first optical components are each fabricated to have an operating wavelength approximating a wavelength on a standardized or predetermined wavelength grid and are each included with a local wavelength tuning component also integrated in the chip. Each of the first optical components is wavelength tuned through their local wavelength tuning component to achieve a closer wavelength response that approximates their wavelength on the wavelength grid.