Abstract: An intracavity frequency-doubled laser has a standing-wave resonator including a gain medium and an optically-nonlinear crystal. The optically-nonlinear crystal has a large walkoff-angle between the fundamental laser-beam and the frequency-doubled beam created by passage of the fundamental laser-beam through the crystal. The optically-nonlinear crystal is arranged such that the walkoff-angle provides for lateral, spatial separation of a fundamental and a corresponding frequency-doubled beam outside the crystal, and for separation of counterpropagating frequency-doubled beams from each other. The spatial separation of the counterpropagating frequency-doubled beams reduces amplitude fluctuation caused by interference between the beams. A physical stop is used to prevent one of the frequency-doubled beams from entering the gain medium. This prevents that beam from spuriously pumping the gain medium and thus serves to further reduce amplitude fluctuation.

Abstract: In order to facilitate control of the polarization plane of a laser beam emerging from a surface-emitting-type semiconductor laser in a specific direction and to suppress occurrence of fluctuations and switching of the polarization plane depending on the optical output and the environmental temperature, a strain generating section (19) is arranged adjacent to a resonator (10B) of a semiconductor laser. The strain generating section (19) impresses anisotropic stress to the resonator (10B) to generate strain, resulting in birefringence and dependence of the gain on the polarization in the resonator (10A). This enables stabilized control of the polarization plane.

Abstract: In a semiconductor laser capable of changing its polarization mode, there are arranged a plurality of regions in its cavity direction and each region includes an active layer and a diffraction grating. The laser is driven by performing a control for switching the polarization mode to a region of the laser, out of the plurality of regions, where a refractive index is easier to be changed by a control than the other region.

Abstract: A laser apparatus includes a laser resonator having a first reflective surface and a second reflective surface, the laser resonator further including a laser medium disposed between the first reflective surface and the second reflective surface for processing light reflected from the first and second reflective surfaces to output a laser beam to be resonated, and a resonator loss varying unit disposed between the first reflective surface and the second reflective surface of the laser resonator, the resonator loss varying unit being capable of switching a state thereof between a first state having a resonance frequency substantially coinciding with one of frequencies at which laser oscillation of the laser resonator is possible and a second state having the resonance frequency shifted to the value that is substantially different from any one of the frequencies at which laser oscillation of the laser resonator is possible to vary a loss of the laser resonator.

Abstract: A semiconductor laser capable of controlling a polarization mode of output light is disclosed. In a fabrication method of the laser, after two laser portions are independently formed, the laser portions are positioned to be optically coupled to each other. In another fabrication method of the laser, after at least portions of two laser portions are separately formed, an irregularly-formed portion at a boundary portion therebetween is removed. The fabrication method can be facilitated and a degree of freedom in the polarization control can be increased, since the two laser portions are separately formed.

Abstract: A laser light emitting device includes a light source for emitting a continuous-wave laser light beam as a basic wave, a non-linear optical crystal for generating second harmonics, on which the basic wave is incident, a non-linear optical crystal for generating fourth harmonics, on which the second harmonics generated by the non-linear optical crystal for generating second harmonics is incident and a non-linear optical crystal for generating fifth harmonics, on which the basic wave transmitted through the non-linear optical crystal for generating second harmonics and fourth harmonics generated by the non-linear optical crystal for generating fourth harmonics are incident. The non-linear optical crystal for generating fifth harmonics additively mixes these incident waves for generating fifth harmonics.

Abstract: A solid state laser includes a resonator, a solid laser crystal disposed in the resonator, a pumping source for pumping the laser crystal, a pair of .lambda./4 plates which is disposed in the resonator with the laser crystal intervening therebetween and makes an oscillation beam of a twisted mode, and a polarization control element which is disposed in the resonator and sets the linear polarization of the solid state laser beam in a predetermined direction. The solid laser crystal is a birefringent crystal and an optical axis of the birefringence of the solid laser crystal is oriented in the direction of the linear polarization of the solid state laser beam set by the polarization control element.

Abstract: The output power of a passively modelocked fiber laser is increased by distributing optical losses throughout the cavity. The laser cavity includes a saturable absorber and a polarizing element that serves as the output coupler, and these are positioned on opposite sides of the fiber gain medium. The pump light is preferably injected towards the side of the laser cavity that includes the saturable absorber. The laser cavity compensates for polarization drifts and is environmentally stable.

Abstract: In an optical device having a diffraction grating and at least two surfaces for reflecting light, the oscillation state is switched between a first oscillation state mainly based on resonance by distributed reflection by the diffraction grating, and a second oscillation state mainly based on Fabry-Perot resonance between the two surfaces. The characteristics of one of two modes to be used are improved at the cost of coherence of the other mode.

Abstract: A polarization control element for controlling the direction of polarization and the longitudinal mode of a laser is formed by cutting a birefringent crystal so that its light incident face and light emanating face are at an angle to the optical axis of the crystal and adjusting the thickness and the reflectivities of the faces of the crystal so that the crystal can function as a Fabry-Perot etalon. The thickness of the birefringent crystal is set so that the wavelengths selected by the birefringent crystal for two laser oscillation modes whose directions of polarization are normal to each other differ from each other.

Abstract: A high powered solid-state laser apparatus that is small in size and low in cost. The solid-state laser apparatus includes a semiconductor laser, a laser crystal, an etalon element, a non-linear wavelength converting element, and an output mirror, which are used to reduce the number of the fundamental wave length mode pieces, thereby raising an efficiency of the Q-switch. Thus, an output power of the laser is increased.

Abstract: The present invention is a system and method for mode-locking a laser, comprising reversibly converting radiation in the laser at a fundamental frequency into radiation at a second harmonic frequency, discriminating the radiation at the fundamental frequency using a polarization of the radiation at the fundamental frequency, and reconverting the radiation at the second harmonic frequency into radiation at the fundamental frequency.

Abstract: A robust method of stabilizing a diode laser frequency to an atomic transition is provided. The method employs Zeeman shift to generate an anti-symmetric signal about a Doppler-broadened atomic resonance, and, therefore, offers a large recapture range as well as high stability. The frequency of a 780 nm diode laser, stabilized to such a signal in Rb, drifts less than 0.5 MHz.sub.pk-pk (one part in 10.sup.9) in thirty-eight hours. This tunable frequency lock may be inexpensively constructed, requires little laser power, rarely loses lock, and may be extended to other wavelengths by using different atomic species.

Abstract: A polarization-mode selective semiconductor laser includes a semiconductor laser structure including an active layer for generating gain spectra for the first and second different polarization modes and a diffraction grating formed with a uniform pitch over the laser structure. The laser structure includes a first DFB reflector portion with a first channel stripe and a second DFB reflector portion with a second channel stripe connected to the first stripe channel. The first DFB reflector portion and the second DFB reflector portion is serially arranged in a cavity direction of the laser.

Abstract: In an optical communication system using polarization scrambling of the transmitted optical signal, the scrambling causes the polarization vector to rotate. The scrambler includes a modulator to modulate either the phase or the wavelength of the optical signal. A polarization dispersion device converts the phase modulation or wavelength modulation into polarization modulation. This polarization dispersion device consists of the optical communication fibers on the output side of the modulator.

Abstract: The present invention relates to a vertical cavity surface emitting laser device comprising a plurality of semiconductor layers formed upon a substrate and capable of emitting a laser beam of a selected wavelength and a selected polarization, wherein said polarization is established by the presence of stress inducing elements disposed on said free surface of the laser device which induce a stress in the active layers of the laser device. The stress inducing elements are made of a material having a higher coefficient of thermal expansion than the material which comprises the surface layer of the laser device.

Abstract: The present invention relates to a white pulse source that produces spectrally shaped white pulses of a constant optical output power over a wide wavelength range. The white pulse source includes a pump pulse source for generating pump pulses with a center wavelength .lambda.0 and a waveguided nonlinear optical medium with a length L. The waveguided nonlinear optical medium is characterized by two properties: the first property is that chromatic dispersion D(.lambda.0,z) at the center wavelength of pump pulses in ps/nm/km is positive at an input end of said waveguided nonlinear optical medium, where z=0, and decreases towards an output end. The second property is that said chromatic dispersion D(.lambda., z) has a maximum value D(.lambda.p(z), z) at a peak wavelength .lambda.p(z) within a range of propagation distance given by L1.ltoreq.z.ltoreq.L where 0.ltoreq.L1<L, and that said chromatic dispersion D(.lambda., z) has two zero-dispersion wavelengths, .lambda.1(z) and .lambda.2(z), where D(.lambda.

Abstract: A laser or laser amplifier apparatus has a diode pump source producing a polarized pump beam. A laser head includes a gain medium that produces an output beam. One or more optical fibers are coupled to the diode pump source and deliver the pump beam to the laser head. A depolarization device is coupled to the diode pump source, laser head or optical fiber and produces an depolarized pump beam. By depolarizing the output beam, movement, including rotation, of the pump source does not comprise the output beam produced from the laser head.

Abstract: A polarizer/modulator assembly (10) including a polarizing unit (12) and a modulator unit (14) that are selectively and independently positionable within a resonator cavity of a solid state diode slab laser. The polarizing unit (12) includes a pair of polarizing elements (32, 34) positioned in a "V-shaped" configuration so that both elements (32, 34) are positioned at Brewster's angle with respect to the beam path to combine to polarize the light in the same direction. The combination of the polarizing elements (32, 34) eliminates beam deflection when the polarizer unit (12) is inserted into the beam path. The polarizing elements (32, 34) are mounted in a metal housing (30) that captures rejected light from the polarizing elements (32, 34). The housing (30) includes a cooling tube (52) to control temperature of the housing (30) during temperature build-up caused by the rejected light.

Abstract: Electro-optical devices comprising a multifaceted anisotropic acousto-optical crystal for transforming a single-frequency beam comprising two individual linearly-orthogonally, polarized input beams into an output beam having two linearly-orthogonally, polarized principal output beams having frequencies that differ from each other and the input beam where the input beam preferably is a laser of frequency, f.sub.L. While the directions of propagation of the individual input beams are preferably parallel, and the directions of propagation of the principal output beams are preferably parallel, they need not be and instead the individual input beams and the principal output beams may beneficially have their own predetermined angle of divergence or convergence, respectively.

Abstract: A polarization controlled laser system receiving a pump laser beam includes a long laser cavity for precluding mode hopping. Preferably, the long laser cavity is defined by first and second dichroic reflectors, a rare earth doped optical fiber disposed between the first and second dichroic reflectors for amplifying the pump laser beam to thereby produce an amplified laser beam, a polarization controller for controlling polarization of the amplified laser beam, and a polarization selector for selecting the polarization of the amplified laser beam. The polarization selector can include a polarizing optical fiber while the polarization controller advantageously may include a polarization maintaining optical fiber. Alternatively, the rare-earth doped optical fiber, the polarization controller, and the polarization selector are all formed from a single polarizing rare-earth doped optical fiber.

Abstract: An intracavity doubled single longitudinal mode laser is disclosed which provides stable (i.e., low amplitude variation in its output beam intensity), efficient operation. An associated method is also disclosed. The laser includes an input mirror and an output mirror defining a resonant cavity and a light path within the resonant cavity and between the mirrors. The output mirror is configured to be substantially transparent to an output wavelength produced within the cavity. A lasant material is positioned in the light path for producing light at a desired fundamental wavelength and possibly other, unwanted wavelengths. Polarizing element and a type I doubling material are also positioned in the light path. During operation of the laser, the polarizing element polarizes the desired fundamental wavelength as well as the unwanted wavelengths of light produced by the lasant material. The type I doubling material then produces output wavelengths at twice the frequency of any wavelengths passing therethrough.

Abstract: An optical semiconductor apparatus includes a substrate, a first region formed on the substrate, a second region formed on the substrate, and a stimulating unit. The first region includes a first waveguide which extends in a light propagation direction and is constructed so as to permit light waves in two different polarization modes to be propagated in the propagation direction. The first waveguide contains a first active region which is constructed such that a gain for one of the different polarization modes is dominant. The second region includes a second waveguide which extends in the propagation direction, is coupled to the first waveguide and is constructed so as to permit light waves in the different polarization modes to be propagated in the propagation direction. The second waveguide contains a second active region which is constructed such that a gain for the other of the different polarization modes is dominant.

Abstract: Laser apparatus for delivering optical power to an output port comprises first and second fiber lasers having at least partially overlapping cavity resonators. In one state the lasers are phase locked; in another they are not. An intracavity polarization transformer (e.g., a polarization modulator or a segment of PMF) determines the phase state of the apparatus. In each state the reflectivity of a reflector common to the lasers determines the amount of optical power which is delivered to the output port. In one embodiment the apparatus has a plurality of output ports to which separate utilization devices are coupled. The phase state of the lasers and the reflectivity of the common reflector determines how the optical power is allocated among the devices.

Abstract: A master radio-frequency signal output from a master oscillator is input to a frequency converter. The frequency converter generates and outputs a multiplied signal having a frequency higher than that of the master radio-frequency signal by using the master radio-frequency signal. A loss of light reciprocating in an optic resonator of a laser oscillator is controlled by both the master radio-frequency signal output from the master oscillator and the multiplied signal output from the frequency converter. It is possible to highly precisely synchronize a pulse laser beam and a radio-frequency signal.

Abstract: A split reciprocal polarization switch (SRPS) for use in constructing high performance switching devices used in fiber optics. The SRPS allows selective changes in the polarization of one or the other of two optical rays passing therethrough along first and second bi-directional ray paths of the SRPS so that they emerge therefrom with the same polarizations. The SRPS includes a switching section for selectively changing the optical polarization of optical rays according to a selected state of the switching section, and a split section including a first and second sections having different polarization changing characteristics.

Abstract: Electro-optical devices for transforming a single-frequency, linearly polarized input beam from a light source introduced into a multifaceted anisotropic acousto-optical crystal into an output beam having two orthogonally polarized, output beam components that differ in frequency from each other and may be parallel or have a predetermined angle of divergence between them. The energy flux profiles of the output beam components may be spatially separated, partially coextensive, or substantially coextensive in accordance with the birefringence, acoustical, and optical properties of the acousto-optical crystal and/or the use of external elements for particular device embodiments.

Abstract: A semiconductor laser that selectively performs oscillations in different polarization modes has first and second laser regions on a substrate. The first laser region exhibits a gain spectrum in which one polarization mode is dominant and the second laser region exhibits a gain spectrum in which a different polarization mode is dominant. Current injected independently into the each laser region causes polarization mode oscillation competition. One of the different polarization mode oscillations is selected by, for example, injecting a minute modulated current into at least one of the first and second laser regions.

Abstract: An optical semiconductor apparatus includes at least two semiconductor laser portions each having a light waveguide with an active layer and a distributed reflector, and a stimulating unit for independently stimulating the active layers of the light waveguides. The semiconductor laser portions are serially arranged in a light propagation direction. The light waveguides are constructed such that a difference between propagation constants for two different polarization modes in one of the waveguides is different from a difference between propagation constants for the two different polarization modes in the other of the waveguides.

Abstract: A laser oscillator which is capable of preventing damage caused by light reflected from a workpiece and a decrease in productivity resulting therefrom. Between a rear mirror and an output mirror within the laser oscillator is arranged a bending mirror. The bending mirror has a coating formed on the surface thereof, which reflects S-polarized light sufficiently but has a low reflectance with respect to P-polarized light. A laser beam is amplified between the rear mirror and the output mirror, and emitted through the output mirror. The laser beam output at this time is formed by S-polarized light. The S-polarized light is converted to a circularly polarized light by a zero-shifting mirror and a quarter wavelength mirror. The laser beam converted to the circularly-polarized light turns in a perpendicular direction at a mirror and is converged onto a workpiece by a condenser lens.

Abstract: A laser system capable of high speed silicon wafer dicing is disclosed. A laser with high average power, high repetition rate, ultra-short pulsewidth, and excellent beam quality is described. This is achieved by the use of high power diodes used to uniformly pump an improved Nd:YAlO.sub.3 crystal, resulting in a beam with excellent quality. In addition, a beta-barium borate (BBO) crystal, used in conjunction with drift step recovery diodes (DSRDs), forms a high speed optical switch which can be used to cavity dump the laser.

Abstract: A variable wavelength light source is provided with a laser of which the oscillating state can be changed over between two oscillating states accompanied by a change of an oscillation wavelength, and an optical selection element for selecting an output light in one of the two oscillating states of the laser. The optical selection element is capable of changing over which of the output lights in the two oscillating states of the laser is to be selected. Also, by using a laser in which the oscillation wavelength in the respective oscillating states can be changed, the wavelength variation ranges in the both oscillating states can be used.

Abstract: An electro-optical apparatus transforms a single frequency, linearly polarized laser input beam (18) from a light source (10) into an output beam (36) having two collinear orthogonally polarized output beam components (32,33) differing in frequency from each other by the frequency of a stabilized electrical signal (40) provided from an electronic oscillator (38). The output of the oscillator (38) is provided to a power amplifier (42) which is used to drive a piezoelectric transducer (46) affixed to an acousto-optical Bragg cell (52) through which the input beam (18) passes and is transformed into the output beam (36) composed of two beam components (32,33). The electrical output (44) of the power amplifier (42) is adjusted so that each of the output beam components (32,33) has approximately a preselected fraction of the intensity of the input beam (18).

Abstract: A tunable time plate device for providing a continually adjustable time delay between two linearly polarized laser pulses .omega..sub.1 and .omega..sub.2. The device comprises a time plate made of a parallel flat birefringence crystal having a principal axis of refractive index n.sub.z parallel to its surface, and a principal axis of refractive index n.sub.x having an angle .phi. to its surface normal. The time plate is rotatably mounted such that it is rotatable about its n.sub.z principal axis for tuning a time delay between the two laser pulses as they travel through the time plate which is a function of an incident angle .theta. between its surface normal and the propagation direction of the laser pulses. The time delay therefore can be continually adjusted by rotating said time plate to change said incident angle .theta..

Abstract: A third-harmonic crystal has a Brewster-cut dispersive output surface for separating the p-polarized fundamental and third-harmonic beams without introducing losses into the beams. The output surface of the third-harmonic crystal is optically uncoated, and thus insensitive to potential ultraviolet (UV)-induced damage. Frequency doubling and tripling lithium triborate (LBO) crystals are used with a Brewster-cut Nd-YAG active medium in a resonant cavity to generate UV light at 355 nm from infrared (IR) light at 1064 nm. Except for the tripling crystal output surface, the doubling and tripling crystal optical surfaces are normal-cut and anti-reflection (AR) coated.

Abstract: This invention discloses the following. Two modulation currents are injected into different electrodes of a semiconductor laser having a plurality of electrodes. The relationship between the phases of the two modulation currents is so adjusted that an output waveform is not distorted especially when a modulation frequency is low. Polarization modulation is applied as the modulation form.

Abstract: A laser with high average power, high repetition rate, ultra-short pulsewidth, and excellent beam quality is described. This is achieved by the use of high power diodes used to uniformly pump an improved Nd:YAlO.sub.3 crystal, resulting in a beam with excellent quality. In addition, a beta-barium borate (BBO) crystal, used in conjunction with drift step recovery diodes (DSRDs), forms a high speed optical switch which can be used to cavity dump the laser.

Abstract: A semiconductor laser of the present invention includes a semiconductor laser structure having a waveguide extending along a resonance direction, an active layer provided at least partly in the waveguide, and a control unit for controlling the excited state of the semiconductor laser structure to change the relationship between wavelengths or propagation constants and threshold gains for transverse electric (TE) mode and transverse magnetic (TM) mode of the laser structure. The waveguide is designed such that threshold gains for the TE mode and the TM mode can be alternately made minimum under the control of the control unit.

Abstract: An object of the present invention is to electrically tune and control an oscillating wavelength of a laser at high rate having a good reproducibility without providing any mechanically movable section in the laser resonator. To achieve the object, a laser oscillator is provided comprising a laser resonator composed of a mirror on the output side and a total reflection mirror, a Ti:Al.sub.2 O.sub.3 laser crystal disposed in the laser resonator, an acousto-optic crystal disposed in the laser resonator and to which are inputted the outputting light rays from the Ti:Al.sub.2 O.sub.3 laser crystal, a piezoelectric element mounted on the acousto-optic crystal to input acoustic waves thereto, and a diffraction light ray correcting prism disposed in the laser resonator and for correcting an angle of deflection of the diffraction light rays outputted from the acousto-optic crystal.

Abstract: The present invention relates to a solid-state laser which forms a high-energy and high-power laser beam with a high repetition rate and whose overall system can be optically aligned in a simple manner. The solid-state laser of the invention can be fabricated by means of reflecting the laser beam which is reflected by a phase conjugation mirror(PCM) using stimulated Brillouin scattering(SBS) in a direction that is incidented on the PCM again, concurrently with the arrangement of directions of emission and incidence of the laser beam by the aid of polarization beam splitter(PBS).

Abstract: A semiconductor laser source using a strained active layer of an indium gallium aluminum nitride (In.sub.x Ga.sub.1-x-y Al.sub.y N) quaternary alloy to obtain semiconductor laser sources that emit TE or TM polarized light in the wavelength range of 200 to 600 nm.

Abstract: A high power laser source having a preselected broad bandwidth, including a master oscillator providing a single-mode laser beam, a resonant electro-optical modulator and a source of radio-frequency (rf) modulation voltage, to produce a modulator output beam having sidebands spaced on each side of the nominal frequency of the single-mode laser beam. The bandwidth and the number of modes may be varied by controlling the voltage applied to the modulator. At least one additional modulator in series with the first provides for the addition of other sidebands overlaying those generated with just one modulator. In another embodiment of the invention, the modulator is installed in a PC MOPA (phase conjugated master oscillator power amplifier) configuration to provide modulation only on the return path of the beam from a phase conjugation device having a stimulated Brillouin scattering (SBS) medium.

Abstract: An optical semiconductor apparatus includes a single substrate, at least two semiconductor laser portions each having a semiconductor laser structure and a current injection unit for independently injecting currents into the at least two semiconductor laser portions. The semiconductor laser portions are serially arranged on the substrate in a light propagation direction and respectively includes waveguides having active layers, and layer-extending planes of the waveguides partially overlap and are not parallel to each other. The electric-field directions of TE modes in the respective semiconductor laser portions are parallel to the layer-extending planes of the waveguides, so that the non-parallel layer-extending planes of the waveguides can establish non-parallel TE modes in the respective semiconductor laser portions.

Abstract: An ultrashort pulse laser apparatus of the this invention includes (1) a laser medium, (2) a laser resonator which stores the laser medium and externally extracts a laser beam, and (3) an excitation source for outputting an excitation energy to the laser resonator to excite the laser medium. The laser resonator includes (i) a plurality of resonant mirrors disposed on both sides of the laser medium to form a resonant optical path, and (ii) a phase dispersion compensation unit which includes two optical members respectively arranged on two light input/output surface sides of the laser medium on the resonant optical path and compensates phase dispersion of light in the resonant optical path. That is, the laser medium is disposed in the optical path between the two optical members of the phase dispersion compensation unit.

Abstract: A laser or laser amplifier apparatus has a diode pump source producing a polarized pump beam. A laser head includes a gain medium that produces an output beam. One or more optical fibers are coupled to the diode pump source and deliver the pump beam to the laser head. A depolarization device is coupled to the diode pump source, laser head or optical fiber and produces an depolarized pump beam. By depolarizing the output beam, movement, including rotation, of the pump source does not comprise the output beam produced from the laser head.

Abstract: A light source apparatus includes a light source, a mode selecting unit, a light source control unit and a mode selection control unit. An oscillation mode of the light source is switchable between a first mode under a first stimulated condition and a second mode under a second stimulated condition, and an oscillation wavelength of the light source is changeable. The mode selecting unit selects between oscillation light in the first mode and oscillation light in the second mode emitted from the light source, and the mode selecting unit can change the mode to be selected between the first mode and the second mode.

Abstract: There is provided an optical telecommunications method that can externally modulate a plane of polarization without producing any null point. According to the invention, in an optical telecommunications system for externally modulating the plane of polarization of the light being transmitted through an optical fiber for the transmission of a polarized wave signal by externally applying a signal to modify the state of polarization, the source of light for the transmission of a polarized wave signal is a fiber ring laser.

Abstract: An oscillation polarization mode selective semiconductor laser for selectively performing one of oscillations in different polarization modes, is provided. The semiconductor laser includes a substrate, a laser structure formed on the substrate, and a phase shift region formed in the laser structure. The laser structure includes an active region in which population inversion is established by a current injection thereinto. At least a portion of the phase shift region has a strained quantum well structure in which degrees of a change in refractive index for internal light in different polarization modes due to a current injection thereinto are different from each other. The polarization mode of a light output from the laser can be changed by a small amount of current injected into the phase shift region, and fluctuation in the output intensity can be suppressed during a transition operation in polarization mode.

Abstract: A non-linear optical device in which quasi-phase matching between different optical waves of differing polarizations and refractive indices increases the interaction length between the waves. The quasi-phase matching structure includes a periodic structure over which the non-linear coefficient varies with a given period, preferably the sign of the non-linear coefficient being inverted between two alternating regions. In LiNbO.sub.3, the periodic structure can be achieved by electrical poling. The required period length is increased by selecting light waves of different polarizations for the non-linear interaction such that a large portion of the dispersion between the waves of different wavelength is compensated by the birefringence of the waves of different polarization. In particular, periodic poling can quasi-phase match radiation in the range of 0.80 .mu.m to 1.2 .mu.m to generate second harmonic generation radiation in the blue and green visible spectrum.

Abstract: An optical pulse source includes a gain-switched semiconductor laser diode (1). Light from a continuous wave source (3) is optically coupled into the laser cavity. Light output from the laser cavity passes through an electro-optic amplitude modulator (2). Synchronised modulating signals are applied to the semiconductor diode and to the amplitude modulator. The source outputs short low-jitter optical pulses and is suitable for use, for example, in a broadband optical network operating at high bit rates of 100 Gbit/s or more, or in an optical interconnect.