Abstract: Heatsinking in laser devices may be improved via a device, including: a header disk having a first face with a circumference; a header post that is thermally conductive, and having: a second face connected to the first face coterminously with the circumference; a third face opposite to the second face; and a fourth face perpendicular to the second face and the third face; a lens holder, having a fifth face connected to the third face; and an optical subassembly connected to the fourth face and optically aligned with the lens holder. The device may also be understood to comprise: a header disk having a circumference; a header post that is thermally conductive, the header post having: an arc coterminous to a portion of the circumference; a mounting face, perpendicular to a plane in which the arc and the circumference are defined; and a bonding face perpendicular to the mounting face.

Abstract: An optoelectronic package is provided. The optoelectronic package includes a photonic component, an optical component, and a connection element. The photonic component includes an optical transmission portion, which includes a plurality of first terminals exposed from a first surface of the photonic component. The optical component faces the first surface of the photonic component. The optical component is configured to transmit optical signals to or receive optical signals from the optical transmission portion. The connection element is disposed between the first surface of the photonic component and the optical component. The connection element is configured to reshape the optical signals.

Abstract: A thermal energy storage (TES) device includes a thermoelectric cooler; and a metallic phase change material (PCM) within the thermoelectric cooler. The PCM may include any of gallium or its alloys, low temperature fusible alloys, and solid metal shape memory alloys. A thermoelectric effect within the PCM is to transport heat in the thermoelectric cooler. The TES device may include a graded oxide layer adjacent to the PCM to serve as a distributed electrical junction in the thermoelectric cooler to create a hot side thermoelectric junction in a bulk volume of the PCM. The graded oxide layer may include ?-IGZO. The TES device may include a high-thermopower corrugated metal foil layer comprising barrier oxides patterned therein. The high-thermopower metal foil layer may be adjacent to the graded oxide layer. The TES device may include a dielectric layer adjacent to the high-thermopower corrugated metal foil layer.

Abstract: Embodiments disclosed herein include dual sided cooling architectures for laser packages. In an embodiment, an electronic package comprises a package substrate, and a laser chip attached to the package substrate. In an embodiment, the laser chip has a first surface and a second surface opposite from the first surface. In an embodiment, an interposer is disposed over the laser chip, where the interposer overhangs an edge of the laser chip. In an embodiment, the electronic package further comprises an interconnect between the interposer and the package substrate.

Abstract: A semiconductor laser device includes a semiconductor laser chip that emits laser light, a plate-like base, and a block protruding from the base and supporting the semiconductor laser chip. The block has a supporting surface and a wire bonding surface. The supporting surface faces a first side in a first direction perpendicular to the laser light emitting direction, and supports the semiconductor laser chip. The wire bonding surface is a surface to which a wire connected to the semiconductor laser chip is connected. The wire bonding surface is shifted in a second direction perpendicular to the emitting direction and the first direction with respect to the supporting surface. The wire bonding surface is inclined relative to the supporting surface, such that the wire bonding surface is more offset to a second side in the first direction with increasing distance from the supporting surface in the second direction.

Abstract: A light emitting element assembly includes: a light emitting element (21); a light emitting element drive unit (30); a first joining member (41) connected to an electrode provided in the light emitting element (21); and a second joining member (42) provided on the light emitting element drive unit (30).

Abstract: A laser weapon system is described. Particularly, embodiments describe subsystems of a laser weapon system including those necessary for laser generation, operational control, optical emission, and heat dissipation configured to provide a lightweight unit of reduced dimensions.

Abstract: The invention relates to a laser chip located between a first and a second electrically and thermally conductive component, wherein: a first lateral surface of the laser chip is connected in a planar manner to a first lateral surface of the first component; the second lateral surface of the laser chip is connected in a planar manner to a first lateral surface of the second component; the laser chip has a radiation side which is located between the components; the radiation side is arranged set back inwardly at a predefined distance from the first end faces of the components; and a radiation space, which extends from the radiation side of the laser chip to the first end faces of the components is formed between the first lateral surfaces of the two components and adjacent to the radiation side of the laser chip.

Abstract: An optical transceiver includes a housing, an optical communication module and a heat dissipation module. The optical communication module includes a substrate, a first optical communication component and a second optical communication component located at opposite sides of the substrate, respectively. The heat dissipation module includes a first heat conductive component and a second heat conductive component disposed on the substrate. The first heat conductive component is spatially spaced apart from the second heat conductive component. The first optical communication component is supported on and in thermal contact with the first heat conductive component. The second optical communication component is mounted on the substrate, and the second optical communication component is in thermal contact with the second heat conductive component through the substrate.

Abstract: An electrical termination unit or feedthrough which may be used for routing electrical conductors through a chamber wall, or otherwise across a barrier between isolated atmospheric conditions. The electrical termination unit may have aluminum as the interface material to the chamber interface and may utilize a ceramic insulator. The electrical termination unit may have the aluminum used as the interface brazed directly to a ceramic surface of the insulator. The aluminum that forms the chamber interface may be formed within a hollow ceramic tube in the same process step that brazes the aluminum to the ceramic tube with a hermetic joint. Machining subsequent to the brazing of the aluminum to the ceramic insulator may allow for achievement of the final form desired. A method for manufacturing such an electrical termination unit.

Abstract: A method and apparatus for matching different impedance of optical components and a package for optical communication using a tapered transmission line (or a taper) are provided. The taper may be configured to include a first section, a second section, and a third section, each of which corresponds to different components. By way of example, the first section of the taper may be configured to be allocated to a driver to a flex joint on a printed circuit board (PCB), the second section of the taper may be configured to be allocated to a flex circuit, and the third section of the taper may be configured to be allocated to a transistor outline (TO) and submount including a directly modulated laser (DML). The taper is configured to minimize an amount of impedance mismatch between the optical components and the package.

Abstract: An abnormality of output laser light is detected for enhancement in safety. A light-source drive device includes a light-source control unit, a light-receiving unit, and an abnormality detection unit. The light-source control unit included in the light-source drive device controls light emission of a light source. The light-receiving unit included in the light-source drive device receives light from the light source through an output part allowing outward output of light of the light source. The abnormality detection unit included in the light-source drive device detects an abnormality of the light output from the output part, on the basis of the received light.

Abstract: A header for a semiconductor package, includes an eyelet having an upper surface, and a lower surface on an opposite side from the upper surface, a metal block having a side surface, and configured to protrude from the upper surface of the eyelet, a lead sealed in a through hole which penetrates the eyelet from the upper surface to the lower surface of the eyelet, and a substrate having a front surface formed with a signal pattern electrically connected to the lead, and a back surface on an opposite side from the front surface. The back surface of the substrate is fixed to the side surface of the metal block. A portion of the back surface of the substrate is exposed from the metal block, and this portion of the substrate is formed with a ground pattern.

Abstract: In some implementations, an optical device for mounting in a flip-chip configuration includes a plurality of flip-chip bumps that are arranged in a pattern on the optical device, wherein the pattern is not aligned with a crystal cleavage plane associated with a substrate of the optical device. In some implementations, the optical device further includes a gap that separates a primary region of the optical device and a secondary region of the optical device, wherein at least one portion of a side of the gap is oriented at a non-zero angle to the crystal cleavage plane.

Abstract: A scanning optical apparatus includes a first light source unit, a second light source unit, a rotary polygon mirror and a casing provided with a bottom surface on which said deflection unit is disposed. The second light source unit is disposed at a position away from the bottom surface more than the first light source unit with respect to a rotational axis direction of the rotary polygon mirror. The casing is provided with first and second supporting surfaces for supporting the first and second light source. Both the first and second supporting surfaces are faced in a direction away from the bottom surface.

Abstract: A laser chip for flip-chip bonding on a silicon photonics chip with passive alignment features. The laser chip includes a chip body made of a p-region and a n-region in vertical direction and extended from a front facet to a rear facet in longitudinal direction, a pair of first vertical stoppers formed respectively beyond two sides of the chip body based on a wider width of the n-region, an active region buried in the chip body between the p-region and the n-region in the vertical direction and extended from the front facet to the rear facet in the longitudinal direction, an alignment mark formed on a top surface of the p-region near the front facet with a lateral distance defined in sub-micron precision relative to the active region; and a thin metal film on the surface of the p-region having a cleaved edge shared with the front facet.

Abstract: A non-lethal dazzling device includes a laser operable in the visible spectrum. The laser can be a relatively low-powered laser, such as a laser having a maximum output power of 2.5 mW, or it can be a higher-powered laser with a drive circuit that lowers the maximum output power to a safe level based on the range of the hostile target from the laser. In certain embodiments, the disclosed non-lethal dazzling device can be coupled to the bridge of a binocular device.

Abstract: A light emitting device includes: a first semiconductor laser element; a base portion including: a bottom portion including a first upper surface on which the first semiconductor laser element is disposed, and a frame portion surrounding the first semiconductor laser element, the frame portion including a second upper surface positioned above the first upper surface and a support portion positioned between the first upper surface and the second upper surface, the a support portion having a support area; a light reflecting member having a flat plate-shaped and contacting the support area, the light reflecting member being configured to reflect light from the first semiconductor laser element; and a lid portion bonded to the second upper surface.

Abstract: The disclosed diode laser packages include a carrier having an optics-mounting surface to which first and second sets of collimating and turning optics are mounted. The carrier includes a heatsink receptacle medially located between the first and second sets. A cooling plenum has a diode-mounting surface and includes heatsink material disposed in the heatsink receptacle. The cooling plenum further has an inlet, an outlet, and a coolant passageway defined between the inlet and the outlet. The coolant passageway is sized to receive the heatsink material disposed in heatsink receptacle. Multiple semiconductor laser diode devices are each mounted atop the diode-mounting surface and positioned for bidirectional emission toward the first and second sets of collimating and turning optics. The multiple semiconductor laser diode devices are thermally coupled to the heatsink material through which coolant is deliverable by the coolant passageway.

Abstract: A diode laser arrangement has a diode laser device and at least one cooling device. The at least one cooling device is arranged on the diode laser device. The at least one cooling device is configured to cool the diode laser device. The at least one cooling device has a contact body and at least one heat conducting insert. The contact body contains a first material or consisting of a first material, and the at least one heat conducting insert has a second material, which is different from the first material, or consisting of a second material, which is different from the first material, and the contact body is arranged on the diode laser device. The at least one heat conducting insert is embedded in the contact body.

Abstract: A pyrolytic graphite (PG) substrate and laser diode package includes a substrate body having a PG crystalline structure with a basal plane oriented at a pre-determined orientation angle as measured from a longitudinal axis of a heat generating material, such as a laser diode, mounted on a surface of the PG substrate, so that a coefficient of thermal expansion (CTE) of the PG substrate is substantially matched with a CTE of the material.

Abstract: An optical sub-assembly includes a diode submount structure, a diode mounted to the diode submount, and a thermoelectric cooler (TEC). The TEC is in thermal contact with the diode, and the diode is positioned between the diode submount structure and the TEC.

Abstract: A diode laser arrangement for the cooling of and supply of electrical current to diode laser devices, having at least two stacks, each having a diode laser device which is configured to emit a laser beam, an upper cooling device, and a lower cooling device. The diode laser device is arranged on the upper cooling device and on the lower cooling device such that the diode laser device is arranged between the upper cooling device and the lower cooling device. The upper and lower cooling devices are in each case electrically connected to the diode laser device arranged therebetween. The upper cooling device and/or the lower cooling device of a stack are in each case formed as a microchannel cooler. The upper cooling device and/or the lower cooling device of a stack in each case have substantially no electrical insulation with respect to the diode laser device arranged therebetween.

Abstract: A light emitting device includes: a first substrate including: a first lead, and a second lead positioned apart from the first lead; a second substrate disposed on an upper face of the second lead, the second substrate including: a base, and a first conducting part disposed on an upper face of the base; a light emitting element disposed on the second substrate and electrically connected to the first conducting part; a first wire electrically connecting the first lead and the first conducting part; and a wall part straddling and covering an upper face of the first lead and an upper face of the second lead. A height of the wall part is less than a height of the second substrate.

Abstract: A photonic module and a method of making same, the module having one or more optoelectronic chips, such as a laser diode typically having six sides, with each optoelectronic chip having two opposing sides (a first side and a second side) abutting and electrically connected to metal regions (preferably electro-formed), the two metal regions are physically distinct and electrically separate from each other, the two electro-formed metal regions serving, in use, as heat spreaders for conducting heat away from the optoelectronic chip.

Abstract: Provided is an optical subassembly, which is compact, is easy to manufacture, and has satisfactory high-frequency characteristics. The optical subassembly includes: an eyelet including a first surface, a second surface and a plurality of through-holes; a plurality of lead terminals; a relay substrate including a lead connection surface and a first bonding surface and having first and second conductor patterns formed across the lead connection surface and the first bonding surface; a device mounting unit including a second bonding surface having formed thereon third and fourth conductor patterns; and an optical device configured to convert one of an optical signal and the differential electrical signals into the other. The first and second conductor patterns on the first bonding surface are connected to the third and fourth conductor patterns by bonding wires, respectively, and the first and second bonding surfaces have normal directions in the same direction.

Abstract: An optical module includes: an optical semiconductor device in which a semiconductor laser and an optical modulator are integrated; a bypass capacitor including a lower electrode and an upper electrode, the bypass capacitor being connected in parallel to the semiconductor laser; a dielectric substrate having an upper surface and a lower surface, the optical semiconductor device and the bypass capacitor being surface-mounted on the upper surface, the dielectric substrate having a conductor pattern on the upper surface, the cathode electrode and the lower electrode being bonded to the conductor pattern; and a conductor block supporting the lower surface of the dielectric substrate. The lower electrode of the bypass capacitor having an overlap area overlapping with the upper surface of the dielectric substrate, the lower electrode of the bypass capacitor having an overhang area overhanging from the upper surface of the dielectric substrate.

Abstract: A light emitting device, according to the present embodiment, has a light emitting panel, a flexible wiring substrate, a mold resin and a protective tape. The light emitting panel has a first substrate, which is transparent to light, a plurality of conductor patterns, which are formed on a surface of the first substrate, a plurality of light emitting elements, which are connected to any of the conductor patterns, and a resin layer, which holds the light emitting elements on the first substrate. The flexible wiring substrate has a circuit pattern that is electrically connected with an exposed part of the conductor patterns. The mold resin covers the exposed part of the conductor patterns and an exposed part of the circuit pattern. The protective tape covers the mold resin, and is wound around a joint part of the light emitting panel and the flexible wiring substrate.

Abstract: A light emitting device includes a base, a lid portion, a plurality of semiconductor laser elements, and a collimate lens. The lid portion is fixed to the base to define a hermetically sealed space by the lid portion and the base. The semiconductor laser elements are provided in the hermetically sealed space. The collimate lens has a non-lens portion fixed to the lid portion, and a plurality of lens portions connected and aligned along one direction and surrounded by the non-lens portion when viewed from a light extracting surface side of the collimate lens.

Abstract: A semiconductor laser machine includes a semiconductor laser element including a first end face that emits a laser beam and a second end face that is opposite the first end face; a heat sink; and a sub-mount securing the semiconductor laser element to the heat sink. The sub-mount includes a substrate that serves as a thermal stress reliever, a solder layer joined to the semiconductor laser element, and a junction layer formed between the substrate and the solder layer. Compared with the semiconductor laser element, the substrate is extended in a rearward direction that is from the first end face toward the second end face. As for the solder layer and the junction layer, a portion of at least the solder layer is removed behind the second end face.

Abstract: A laser weapon system is described. Particularly, embodiments describe subsystems of a laser weapon system including those necessary for laser generation, operational control, optical emission, and heat dissipation configured to provide a lightweight unit of reduced dimensions.

Abstract: An electronic device is provided. The electronic device includes: a substrate, a first light-emitting element, and a second light-emitting element. The first light-emitting element is disposed on the substrate and configured to emit a first color light under a first current density when the substrate provides a first current to the first light-emitting element. The second light-emitting element is disposed on the substrate and configured to emit a second color light under a second current density when the substrate provides a second current to the second light-emitting element. The first current is equal to the second current, and the first current density is different from the second current density.

Abstract: An apparatus for stacking and coating of very short cavity laser diode arrays. The apparatus includes an array holder fixture to securely hold the very short cavity laser diode arrays and spacer arrays, and a stacking plate. The array holder fixture including a top-side presser to secure a stack of very short cavity laser arrays and spacer arrays from a first end of the stack, a bottom-side presser to secure the stack of very short cavity laser arrays and spacer arrays from a second end of the stack, and a pair of side clamps. The array holder fixture is operatively coupled to the stacking plate during the stacking of the very short cavity laser diode arrays and spacer arrays.

Abstract: A method and system for a three dimensional printing system are described herein. In one example, the three dimensional printing system has a moveable carriage, an array of laser modules and a print controller. In this example, the moveable carriage has a print head arranged to selectively deposit a printing agent on to a layer of build material as the moveable carriage is moved relative to the layer of build material. The printing agent controls localized fusing of the build material on application of energy. The print controller is communicatively coupled to the array of laser modules and controls activation of individual laser modules of the array of laser modules so as to apply, selectively, energy to addressable sub-regions of the layer of build material on which printing agent has been deposited to control fusing together with the deposited printing agent.

Abstract: Methods for fabricating vertical cavity surface emitting lasers (VCSELs) on a large wafer are provided. An un-patterned epi layer form is bonded onto a first reflector form. The first reflector form includes a first reflector layer and a wafer of a first substrate type. The un-patterned epi layer form includes a plurality of un-patterned layers on a wafer of a second substrate type. The first and second substrate types have different thermal expansion coefficients. A resulting bonded blank is substantially non-varying in a plane that is normal to an intended emission direction of the VCSEL. A first regrowth is performed to form first regrowth layers, some of which are patterned to form a tunnel junction pattern. A second regrowth is performed to form second regrowth layers. A second reflector form is bonded onto the second regrowth layers, wherein the second reflector form includes a second reflector layer.

Abstract: Disclosed herein are various embodiments for stronger and more powerful high speed laser arrays. For example, an apparatus is disclosed that comprises an active mesa structure in combination with an electrical waveguide, wherein the active mesa structure comprises a plurality of laser regions within the active mesa structure itself, each laser region of the active mesa structure being electrically isolated within the active mesa structure itself relative to the other laser regions of the active mesa structure.

Abstract: A cooling device (1) for cooling an electrical component (4), in particular a laser diode, including a base body (2) with at least one outer face (20) and at least one integrated cooling channel (5), in particular a micro-cooling channel, a connecting surface (21) on the outer face (20) of the base body (2) for connecting the electrical component (4) to the base body (2) and a first stabilising layer (11), wherein the first stabilising layer (11) and the connecting surface (21) are arranged at least partially one above the other along a primary direction (P), and wherein the first stabilising layer (11) is offset relative to the outer face (20) towards the interior of the base body (2) by a distance (A) along a direction parallel to the primary direction (P).

Abstract: Systems and methods described herein relate to LIDAR systems and their operation. An example method includes partitioning a plurality of light-emitter devices into a plurality of groups. Each light-emitter device is associated with a given group of the plurality of groups. The method also includes selecting a group from the plurality of groups according to a predetermined group order and selecting one or more light-emitter devices from the plurality of light-emitter devices of the selected group according to a firing order. The method yet further includes, at a predetermined shot dither time, causing the selected light-emitter device to emit at least one light pulse. The predetermined shot dither time is based on a shot dither schedule. The method may additionally include repeating the method to provide a complete scan in which each light-emitter device of the plurality of light-emitter devices has emitted at least one light pulse.

Abstract: A semiconductor laser module includes: an optical fiber that outputs a first laser beam to an exterior of the semiconductor laser module; semiconductor laser devices each including an emission portion that emits a second laser beam, an electrically conductive portion that supplies electric power to the emission portion, and a mount on which the emission portion and the electrically conductive portion are disposed; a mount base including mount surfaces that form steps; and an optical system that optically couples the second laser beams from the emission portions to an incident end face of the optical fiber. The mounts of the semiconductor laser devices are disposed on the mount surfaces. The semiconductor laser devices include an upper semiconductor laser device and a lower semiconductor laser device adjacent to each other in a step direction of the mount base.

Abstract: Methods, devices and systems are described for enabling a series-connected, single chip vertical-cavity surface-emitting laser (VCSEL) array. In one aspect, the single chip includes one or more non-conductive regions one the conductive layer to produce a plurality of electrically separate conductive regions. Each electrically separate region may have a plurality of VCSEL elements, including an anode region and a cathode region connected in series. The chip is connected to a sub-mount with a metallization pattern, which connects each electrically separate region on the conductive layer in series. In one aspect, the metallization pattern connects the anode region of a first electrically separate region to the cathode region of a second electrically separate region. The metallization pattern may also comprise cuts that maintain electrical separation between the anode and cathode regions on each conductive layer region, and that align with the etched regions.

Abstract: An adapter element (10) for connecting a component (4), such as a laser diode, to a heat sink (7), comprising: a first metal layer (11), which in a mounted state faces the component (4), and a second metal layer (12), which in the mounted state faces the heat sink (7), and an intermediate layer (13) comprising ceramic arranged between the first metal layer (11) and the second metal layer (12), wherein the first metal layer (11) and/or the second metal layer (12) is thicker than 40 ?m, preferably thicker than 70 ?m and more preferably thicker than 100 ?m.

Abstract: A non-lethal dazzling device includes a laser operable in the visible spectrum. The laser can be a relatively low-powered laser, such as a laser having a maximum output power of 2.5 mW, or it can be a higher-powered laser with a drive circuit that lowers the maximum output power to a safe level based on the range of the hostile target from the laser. In certain embodiments, the disclosed non-lethal dazzling device can be coupled to the bridge of a binocular device.

Abstract: A chip packaging structure that includes an optoelectronic (OE) chip mounted on a first surface of a substrate and whose optically active area is directed laterally; and a lens array for the optoelectronic (OE) chip that is mounted on the first surface of the substrate and faces to the optoelectronic (OE) chip, wherein the lens array has inside a reflector reflecting light from a first direction to a second direction, in which the first direction is substantially perpendicular to the second direction.

Abstract: A laser element includes a light emitting portion that has at least two or more light emitting points, and a terminal member on which the light emitting portion is mounted. The terminal member includes a base portion that has a mounting surface on which the light emitting portion is mounted, a base that has a front surface where the base portion is provided substantially at a center, and four pins that extend from a rear surface of the base. The light emitting portion is positioned in a range surrounded by the four pins as viewed from the front surface of the base.

Abstract: A Vertical Cavity Surface Emitting Laser (VCSEL) has a mesa having an active region, which has m active layer structures (with m?2). The active layer structures are electrically connected to each other by a tunnel junction therebetween. The mesa has an optical resonator, which has first and second DBRs. The active region is between the first and second DBRs. The VCSEL has first and second electrical contacts, which provide electrical current to the active region, and an electrical control contact, which controls gain-switched laser emission of the VCSEL by at least 1 up to m?1 active layer structures by a current between the electrical control contact and the first or second electrical contact. A current aperture is between the active region and the first or second electrode. A distance between the current aperture and a furthest active layer structure is at least three times the laser light's wavelength.

Abstract: An optical semiconductor device comprises: a first wiring pattern provided on a carrier mounting surface of a dielectric substrate; a first reference potential pattern surrounding the first wiring pattern; a carrier block provided on the carrier mounting surface and having a main surface, a side surface, and a second wiring pattern and a second reference potential pattern constituting coplanar lines; and an optical semiconductor element provided on the main surface. One end portion of the second wiring pattern extends to at least an end edge on the side surface side in the main surface and is conductively joined to the first wiring pattern with a conductive joining material therebetween. One end portion of the second reference potential pattern extends to at least the end edge on the side surface side in the main surface and is conductively joined to the first reference potential pattern with a conductive joining material therebetween.

Abstract: A conversion element, an optoelectronic component, an arrangement and a method for producing a conversion element are disclosed. In an embodiment an arrangement includes a conversion element having a wavelength converting conversion material, a matrix material in which the conversion material is embedded and a substrate on which the matrix material with the embedded conversion material is directly arranged, wherein at least one condensed sol-gel material, and a laser source configured to emit primary radiation during operation, wherein the conversion element is arranged in a beam path of the laser source, wherein the conversion element is mechanically immovably mounted with respect to the laser source, and wherein the primary radiation of the laser source is dynamically arranged to the conversion element.

Abstract: A housing for an electronic component, in particular for a laser diode, is provided. The housing includes a mounting area for the electronic component and has a lateral wall provided with a feedthrough for a light guide. The base wall of a basic body of the housing has both a heat sink for a thermoelectric cooler and a plurality of feedthroughs for pins for electrically connecting the electronic component.

Abstract: A testing device may include a stage associated with holding an emitter wafer during testing of an emitter. The stage may be arranged such that light emitted by the emitter passes through the stage. The testing device may include a heat sink arranged such that the light emitted by the emitter during the testing is emitted in a direction away from the heat sink, and such that a first surface of the heat sink is near a surface of the emitter wafer during the testing but does not contact the surface of the emitter wafer. The testing device may include a probe card, associated with performing the testing of the emitter, that is arranged over a second surface of the heat sink such that, during the testing of the emitter, a probe of the probe card contacts a probe pad for the emitter through an opening in the heat sink.

Abstract: A light emitting unit includes a reflective structure, a light transmitting body and a light emitting chip. The reflective structure has a recess formed by inner side surfaces thereof, and the reflective structure includes a side opening and a bottom opening corresponding to the recess. The side opening and the bottom opening are adjacent to each other, and the inner side surfaces are defined as a top surface and a surrounding side surface. The light transmitting body is disposed within the recess and doped with fluorescent powder. The light transmitting body includes a light emitting surface and an electrode exposing surface. The light emitting surface is corresponding to the side opening; and the electrode exposing surface is corresponding to the bottom opening. The light emitting chip is partially disposed within the light transmitting body and has a bottom, a top light emitting and side light emitting surfaces.