Abstract: Embodiments of the present invention disclose an optical transmitter, a 10 G-DML, an MPD 1, an MPD 2, a collimation lens, and a narrowband optical filter are disposed in a TO to achieve monitoring of an optical power, received optical powers are monitored by using the MPD 1 and the MPD 2, the detected optical powers are output to a wavelength locking monitoring circuit by using a TO pin, variations, which are detected by the wavelength locking monitoring circuit, of the optical power and a variation of a wavelength locking factor K0 are separately compared with corresponding thresholds, and a comparison result are sent to a wavelength locking control circuit, to enable the wavelength locking control circuit to adjust, according to the comparison result and by using the TO pin, a temperature of a TEC to perform wavelength alignment.

Abstract: In a method for producing in particular structural components or chassis components for a motor vehicle by hot or semi-hot forming, a sheet metal blank is heated in a heating station at least in a first region from a starting temperature to a target temperature, and then the warm blank is transferred to a cooled pressing tool and is formed and press-hardened. The heating station includes at least one burner zone which includes at least one burner, in which zone the sheet metal blank is heated from the starting temperature to the target temperature, and at least one burner is operated with a combustion gas and an oxygen-containing gas and the sheet metal blank comes into direct contact with the burner flame.

Abstract: An integrated circuit chip cooling device includes a network of micropipes. A first pipe portion and a second pipe portion of the network are connected by at least one valve. The valve is formed of a bilayer strip. In response to change in temperature, the shape of the bilayer strip changes to move the valve from a substantially closed position to an open position. In one configuration, the change is irreversible. In another configuration, the change is reversible in response to an opposite change in temperature.

Abstract: A semiconductor light-emitting device including an N-type semiconductor layer, a plurality of P-type semiconductor layers, a light-emitting layer, and a contact layer is provided. The light-emitting layer is disposed between the N-type semiconductor layer and the whole of the P-type semiconductor layers. The P-type semiconductor layers are disposed between the contact layer and the light-emitting layer. All the P-type semiconductor layers between the light-emitting layer and the contact layer include aluminum.

Abstract: A gallium- and nitrogen-containing laser device including an etched facet with surface treatment to improve an optical beam is disclosed.

Abstract: A laser system that allows transverse arrangement of laser emitters around a laser medium. The system includes a laser medium with a coolant source and electrical controls. A pump layer has a mounting surface, an opposite bottom surface and a center aperture through which the laser medium is inserted. Laser diode emitters are disposed on the mounting surface circumferentially around the laser medium. An intermediate layer has at least one radial channel in fluid communication with the coolant conduit. The intermediate layer is in contact with the bottom surface. A middle layer has micro-channels formed therethrough and a center aperture. The micro-channels are radially arranged around the center aperture and the middle layer is in contact with the intermediate layer. The coolant source is fluidly coupled to the micro-channels to allow coolant to be directed through the microchannels and the radial channel to impinge on the bottom surface.

Abstract: A laser component includes a laser chip having a top side, an underside, a first side surface and a second side surface, which are oriented parallel to a resonator of the laser chip, wherein an underside of the laser chip is arranged in a manner bearing on a carrier, a top side of the laser chip is arranged in a manner bearing on a further carrier, the laser chip is hermetically tightly encapsulated between the carrier and the further carrier, a second electrical contact pad of the laser chip, said second electrical contact pad being formed on the top side of the laser chip, electrically conductively connects to a second electrical mating contact pad formed on the further carrier, and the first side surface of the laser chip thermally conductively connects to a heat sink.

Abstract: An optical element with light-splitting function includes a lens component and a reflecting mirror. The lens component includes first, second and third planes disposed to surround and parallel to a reference axis. The first plane is formed with a first collimating unit and a second collimating unit that is spaced apart from the first collimating unit. The second plane is formed with a third collimating unit. The third plane is formed with a groove extending along and indented toward the reference axis. The groove is defined by a fourth plane and a fifth plane. The fourth plane extends obliquely relative to the first plane. The reflecting mirror is disposed on the third plane to cover the groove and has a reflecting plane facing the fourth and fifth planes.

Abstract: A mask (105) for EUV lithography includes a substrate (107), a multi-layer coating (108) applied to the substrate (107) and a mask structure (109) which is applied to the multi-layer coating (108) and which has an absorber material, the mask structure (109) having a maximum thickness of less than 100 nm, preferably not exceeding a maximum thickness of 30 nm, particularly preferably 20 nm, in particular 10 nm. Also disclosed is an EUV lithography system having such a mask (105) and a method for optimizing the imaging of such a mask (105).

Abstract: An arrangement of a substrate with at least one optical waveguide and with an optical coupling location for coupling in and/or coupling out an optical a radiation into and/or out of the at least one optical waveguide, and of at least one optoelectronic component which is assembled on the substrate and a method for manufacturing such an arrangement is suggested. The optical coupling location is designed in a manner such that the radiation is coupled in and/or coupled out with a coupling-in and/or coupling-out angle of greater than 2° to the perpendicular to the substrate surface. The optoelectronic component is assembled over the coupling location on the substrate in a manner tilted obliquely to the substrate surface, wherein the tilt angle to this surface corresponds to the coupling-in angle and/or coupling out-angle.

Abstract: A semiconductor laser device can include an insulating single crystal SiC having a first surface, a second surface, and micropipes having openings in the first surface and the second surface. A conductive base can be provided on a side of the first surface of the single crystal SiC, and a semiconductor laser element can be provided on a side of the second surface of the single crystal SiC. An insulating member can be formed in the micropipes.

Abstract: The invention relates to a packaging structure for a laser diode, comprising an electrically insulated, heat-conducting board having an electronic circuit thereon; a laser diode chip mounted on the electronic circuit of the electrically insulated, heat-conducting board and having an anode and a cathode, respectively connected to an external soldering pad for external electrical connections; and a heat-conducting base installed on a surface of the electrically insulated, heat-conducting board to conduct the heat generated by the laser diode chip to the heat-conducting base through the electrically insulated, heat-conducting board, wherein the laser diode chip emits the light from an edge of the electrically insulated, heat-conducting board and the area of a faying plane between the electrically insulated, heat-conducting board and the heat-conducting base is adjusted depending on the power requirements of the laser diode, and the area of the faying plane is from 6 to 5,000 mm2.

Abstract: An LAM/ICM assembly comprises an integrated control module (ICM) and an LED array member (LAM). The ICM includes interconnect through which power from outside the assembly is received. In a first novel aspect, active circuitry is embedded in the ICM. In one example, the circuitry monitors LED operation, controls and supplies power to the LEDs, and communicates information into and out of the assembly. In a second novel aspect, a lighting system comprises an AC-to-DC converter and a LAM/ICM assembly. The AC-to-DC converter outputs a substantially constant current or voltage. The magnitude of the current or voltage is adjusted by a signal output from the LAM/ICM. In a third novel aspect, the ICM includes a switching DC-to-DC converter. An AC-to-DC power supply supplies a roughly regulated supply voltage. The switching converter within the LAM/ICM receives the roughly regulated voltage and supplies a regulated LED drive current to its LEDs.

Abstract: In at least one opening of a plurality of openings 10a and 10b, the following inequality is satisfied: x?½·t·(kx/ky) where x represents a minimum distance in a horizontal direction between an end of the one opening and an end of a submount 8, and t represents a thickness of the submount, and in at least one of the other openings different from the one opening, the following inequality is satisfied: x>½·t·(kx/ky).

Abstract: A method of producing a semiconductor laser element includes A) providing at least one carrier assemblage having a multiplicity of carriers for the semiconductor laser elements, C) providing at least one laser bar having a multiplicity of semiconductor laser diodes which include a common growth substrate and a semiconductor layer sequence grown thereon, D) fitting the laser bar on a top side of the carrier assemblage, and E) singulating to form the semiconductor laser elements after D).

Abstract: A visible light communication system includes a light transmitter including a group III nitride semiconductor laser element and a wavelength converter provided to face a light exit surface of the nitride semiconductor laser element and containing a fluorescent material. The visible light communication system further includes a wavelength filter configured to remove light emitted from the fluorescent material and a light receiving element configured to receive light emitted from the group III nitride semiconductor laser element via the wavelength filter.

Abstract: An apparatus and method that provide optical isolation by permitting substantially all forward-propagating light into a delivery fiber from an optical amplifier and substantially preventing backward-traveling light from the delivery fiber entering the optical amplifier without the use of a conventional optical isolator. Eliminating the isolator improves efficiency and reduces cost. Some embodiments use a delivery fiber having a non-circular core in order to spread a single-mode signal into multiple modes such that any backward-propagating reflection is inhibited from reentering the single-mode amplifier.

Abstract: Packages for LED-based light devices include interface structures that can facilitate heat transfer from the package to a heat sink. The package can include multiple LEDs mounted on a ceramic substrate that provides electrically conductive pathways between the LEDs and metal contact pads at a peripheral region of a top surface of the substrate. A bottom surface of the substrate can be patterned with a plate, such as a thick supporting plate, made of metal and/or other materials with high thermal conductivity, that can be attached to an external heat sink.

Abstract: A semiconductor light emitting device includes: a nitride semiconductor light emitting element including a nitride semiconductor substrate having a polar or semipolar surface and a nitride semiconductor multilayer film stacked on the polar or semipolar surface; and a mounting section to which the element is mounted. The nitride semiconductor multilayer film includes an electron block layer. The electron block layer has a smaller lattice constant than the nitride semiconductor substrate. The mounting section includes at least a first mounting section base. The first mounting section base is located close to the nitride semiconductor light emitting element. The first mounting section base has a lower thermal expansion coefficient than the nitride semiconductor multilayer film. The first mounting section base has a lower thermal conductivity than the nitride semiconductor multilayer film.

Abstract: A semiconductor laser module 1 is mainly composed of a package 3, a semiconductor laser 5, lenses 7, 9, 13, reflecting mirrors 11, an optical fiber 15, and the like. The package 3 is composed of a bottom part and side surfaces 19a, 19b. The side surfaces 19a, 19b stand erect approximately vertical to the bottom part of the package. In the semiconductor laser module 1, a plurality of semiconductor laser installation surfaces 17 are formed in a step-like shape. On each semiconductor laser installation surface 17, a semiconductor laser 5 is installed. A lens 7 is arranged at the anterior (in the emission direction) of the semiconductor laser 5. Moreover, a lens 9 is arranged further to the anterior. A reflecting mirror 11 is fixed to the side surface 19a, which is provided facing the emission direction of the semiconductor laser 5.

Abstract: A heat removal system for use in optical and optoelectronic devices and subassemblies is provided. The heat removal system lowers the power consumption of one or more active cooling components within the device or subassembly, such as a TEC, which is used to remove heat from heat generating components within the device or subassembly. For any particular application, the heat removal system more efficiently removes the heat from the active cooling component, by using a heat transfer assembly, such as a planar heat pipe type assembly. The heat transfer assembly employs properties like, but not limited to, phase transition change and thermal conductivity to move heat without external power. In some embodiments, the heat transfer assembly can be used to allow the active cooling component, such as a TEC to be removed, leaving the heat transfer assembly to remove the heat from the device or subassembly.

Abstract: A light source unit includes a light source, a light source support to hold the light source, a fixing member which is attached to the light source support and includes a through-hole through which beams of light emitted from the light source pass, a lens holder inserted into the through-hole and attached to the fixing member by an adhesive; and a collimating lens to collimate the beams of light from the light source, wherein attachment surfaces of the adhesive for the lens holder has a tilted attachment surface tilted relative to the optical axis of the collimating lens.

Abstract: A semiconductor laser device can include an insulating single crystal SiC having a first surface, a second surface, and micropipes having openings in the first surface and the second surface. A conductive base can be provided on a side of the first surface of the single crystal SiC, and a semiconductor laser element can be provided on a side of the second surface of the single crystal SiC. An insulating member can be formed in the micropipes.

Abstract: A device is provided for managing heat in an optical element, including: the optical element; a material at a reference temperature; and an intermediate gas layer located directly between the reference-temperature material and the optical element, the intermediate gas layer being located on at least a portion of the thickness thereof in a temporary diffusion state defined by a thickness of the intermediate gas layer, such that the ratio of the mean free path of the gas molecules in the intermediate gas layer over said thickness is between 0.1 and 10. The thickness of the intermediate gas layer is between 10 ?m and 5 mm. A corresponding heat-management method is implemented in the device for managing the temperature of an optical element.

Abstract: Method and devices for emitting electromagnetic radiation at high power using nonpolar or semipolar gallium containing substrates such as GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, are provided. The laser devices include multiple laser emitters integrated onto a substrate (in a module), which emit green or blue laser radiation.

Abstract: A gallium- and nitrogen-containing laser device including an etched facet with surface treatment to improve an optical beam is disclosed.

Abstract: Reflective bank structures for light emitting devices are described. The reflective bank structure may include a substrate, an insulating layer on the substrate, and an array of bank openings in the insulating layer with each bank opening including a bottom surface and sidewalls. A reflective layer spans sidewalls of each of the bank openings in the insulating layer.

Abstract: Heating resistor used to control laser operation. A laser package, such as a Transmitter Optical Subassembly (TOSA) includes a substrate. A laser is disposed on the substrate. A resistive heating element is disposed on the substrate with the laser. Control circuitry is connected to the resistive heating element. The control circuitry is configured to cause current flow through the resistive heating element based on temperature conditions. Current flow through the resistive heating element causes an increase in the operating temperature of the laser. This can be used to increase the effective operating temperature range of a laser.

Abstract: A mount for semiconductor laser devices comprises thermally conductive anode and cathode blocks on either side of a semiconductor laser device such as a laser diode. Interposed between at least the anode block and the anode of the semiconductor laser device is a sheet of conformable electrically conductive material with high thermal conductivity such as pyrolytic highly-oriented graphite. In some embodiments, a second sheet of such electrically and thermally conductive conformable material is interposed between the cathode of the semiconductor laser device and the cathode block. The semiconductor laser device can be either a single laser diode or a diode bar having a plurality of emitters. A thermally conductive, but electrically insulating, spacer of essentially the same thickness as the laser diode or bar surrounds the diode or bar to prevent mechanical damage while still permitting the conformable material to be maintained in a compressed state and directing current through the laser device.

Abstract: Embodiments of a silicon-based heat-dissipation device and an apparatus including a silicon-based heat-dissipation device are described. In one aspect, an apparatus includes a silicon-based heat-dissipation device which includes a base portion and a protrusion portion. The base portion has a first primary side and a second primary side opposite the first primary side. The protrusion portion is on the first primary side of the base portion and protruding therefrom. The protrusion portion includes multiple fins. Each of at least two immediately adjacent fins of the fins of the protrusion portion has a tapered profile in a cross-sectional view with a first width near a distal end of the respective fin being less than a second width at a base of the respective fin near the base portion of the heat-dissipation device.

Abstract: An LAM/ICM assembly comprises an integrated control module (ICM) and an LED array member (LAM). The ICM includes interconnect through which power from outside the assembly is received. In a first novel aspect, active circuitry is embedded in the ICM. In one example, the circuitry monitors LED operation, controls and supplies power to the LEDs, and communicates information into and out of the assembly. In a second novel aspect, a lighting system comprises an AC-to-DC converter and a LAM/ICM assembly. The AC-to-DC converter outputs a substantially constant current or voltage. The magnitude of the current or voltage is adjusted by a signal output from the LAM/ICM. In a third novel aspect, the ICM includes a switching DC-to-DC converter. An AC-to-DC power supply supplies a roughly regulated supply voltage. The switching converter within the LAM/ICM receives the roughly regulated voltage and supplies a regulated LED drive current to its LEDs.

Abstract: A laser module includes: a bottom plate of a box; the frame member being fixed to the bottom plate; a pipe member including a hollow portion PH communicating with the through hole OP of a box, the pipe member being fixed to the outer wall of the frame member; an optical fiber held on the hollow portion PH of the pipe member; and a laser element accommodated in the internal space of the box, the optical axis of the laser element being aligned with the optical axis of the optical fiber. When the bottom plate is placed on a plane, the bottom face of the pipe member is on the same face as a bottom plate portion contacting the plane.

Abstract: A semiconductor device has a plurality of electronic components mounted on an insulating substrate formed with a metal layer, and electrically connected to each other or to the metal layer; a positioning wire member having a predetermined diameter and a predetermined length, and bonded to each of the plurality of electronic components or to the metal layer; a lead frame disposed to bridge and electrically connect the plurality of electronic components to each other or between the metal layer and the electronic components; and an opening having a size capable of inserting the wire member therethrough formed to penetrate through the lead frame, to join the lead frame to each of the electronic components or the metal layer at a predetermined position therein. The lead frame is positioned on the insulating substrate by inserting the wire member into the opening.

Abstract: A semiconductor laser device having stable heat dissipation property is provided. The semiconductor laser device includes a semiconductor laser element, a mounting body on which the semiconductor laser element is mounted, and a base body connected to the mounting body. The base body has a recess configured to engage with the mounting body and a through portion penetrating through a part of a bottom of the recess. In the specification, the remainder, which is a part of the bottom of the recess except for the through portion has a thickness equal or less than half of the largest thickness of the base body. The lowermost surface of the mounting body is spaced apart from the lowermost surface of the base body through the remainder.

Abstract: The present invention relates to a method of assembling VCSEL chips (1) on a sub-mount (2). A de-wetting layer (13) is deposited on a connecting side of the VCSEL chips (1) which is to be connected to the sub-mount (2). A further de-wetting layer (13) is deposited on a connecting side of the sub-mount (2) which is to be connected to the VCSEL chips (1). The de-wetting layers (13) are deposited with a patterned design or are patterned after depositing to define connecting areas (21) on the sub-mount (2) and the VCSEL chips (1). A solder (15) is applied to the connecting areas (21) of at least one of the two connecting sides. The VCSEL chips (1) are placed on the sub-mount (2) and soldered to the sub-mount (2) to electrically and mechanically connect the VCSEL chips (1) and the sub-mount (2). With the proposed method a high alignment accuracy of the VCSEL chips (1) on the sub-mount (2) is achieved without time consuming measures.

Abstract: Disclosed herein is a high speed optical transceiver module, which makes it possible to prevent a wavelength shift and thus to achieve low power and high efficiency by forming a hole with a predetermined depth in a stem heat sink for dissipating heat generated in an LD through a lower portion of a stem and putting a micro heater in the hole, thereby compensating for the temperature of the LD in order to prevent wavelength shift caused by the influence of the ambient temperature on an LD chip in a transistor outline (TO) when an un-cooled optical transceiver module is driven at low temperature and to prevent the communication from being impossible when the ambient temperature is lowered during the communication using a CWDM scheme.

Abstract: Provided is a transistor outline (TO)-CAN type optical module and an optical transmission apparatus including the same. The optical module includes a stem, a thermo-electric cooler (TEC) on the stem, a first sub-mount on the TEC, an optical element on the first sub-mount, a plurality of electrode lead wirings inserted from an outside to an inside of the stem and disposed adjacent to the TEC and the optical element, a second sub-mount between the electrode lead wirings and the optical element, radio frequency (RF) transmission lines on the second sub-mount, a plurality of bonding wires connecting the RF transmission lines and the optical element, and the RF transmission lines and the electrode lead wirings, and an impedance matching unit disposed around the RF transmission lines and the electrode lead wirings, and controlling impedances of the RF transmission lines and the electrode lead wires.

Abstract: A light-emitting element array includes light-emitting elements that emit light in a direction perpendicular to a substrate. Each light-emitting element includes the substrate, a first nitride semiconductor layer on the substrate and having a mesa portion, an active layer made of a nitride semiconductor disposed on the surface of the mesa portion of the first semiconductor layer opposite the substrate, a second nitride semiconductor layer on the active layer, and a heat radiation layer disposed so that the surface formed by projecting the heat radiation layer on a plane perpendicular to the optical axis of the light-emitting element does not overlap with the surface formed by projecting the mesa portion on the same plane when viewed in the optical axis direction. When the light-emitting element is projected on a plane perpendicular to the optical axis, the surface has an area in a specific range.

Abstract: A method to tune an emission wavelength of a laser diode (LD) finely is disclosed. The method first controls a temperature of the etalon filter in T1 or T2, where the transmittance of the etalon filter becomes 40 to 50%, assuming a height between the peak and the bottom of the periodic transmittance to be 100%, at the grid wavelength ?1 or ?2, respectively. Then, the temperature of the LD is adjusted such that the intensity of light emitted from the LD and transmitted through the etalon filter becomes 40 to 50%.

Abstract: Disclosed is an ASE-free continuously tunable external resonator laser in which reduction in tuning range and decrease in output are suppressed. The external resonator laser comprises: a fixed support body which has a half mirror that partially reflects incident light and partially transmits incident light fixed therein; and a rotatory support body which is rotatably supported by the fixed support body by way of a shaft, and which has a laser chip that emits light, a collimator lens that collimates light emitted from the laser chip, and a diffraction grating that diffracts light emitted from the laser chip, fixed therein.

Abstract: A fiber coupled semiconductor device and a method of manufacturing of such a device are disclosed. The method provides an improved stability of optical coupling during assembly of the device, whereby a higher optical power levels and higher overall efficiency of the fiber coupled device can be achieved. The improvement is achieved by attaching the optical fiber to a vertical mounting surface of a fiber mount. The platform holding the semiconductor chip and the optical fiber can be mounted onto a spacer mounted on a base. The spacer has an area smaller than the area of the platform, for mechanical decoupling of thermally induced deformation of the base from a deformation of the platform of the semiconductor device. Optionally, attaching the fiber mount to a submount of the semiconductor chip further improves thermal stability of the packaged device.

Abstract: A heat dissipation device of a light engine for a projector has a housing, a fan module, a light engine and a heat sink. The light engine is positioned in the housing and connected to the heat sink. The heat sink is positioned out of the housing. The housing has a fan-enclosed flow channel attached on an outer surface of the housing. The fan module is guided by the fan-enclosed flow channel to the heat sink to enhance heat dissipation efficiency of the light engine for the projector.

Abstract: A laser module includes a Transmitter Optical Sub-Assembly (TOSA) and a heat radiating means. The TOSA generates light by an electrical signal and transmits the generated light through an optical fiber. The heat radiating means is in contact with the TOSA to discharge heat generated by the TOSA.

Abstract: An interposer (support substrate) for an opto-electronic assembly is formed to include a thermally-isolated region where temperature-sensitive devices (such as, for example, laser diodes) may be positioned and operate independent of temperature fluctuations in other areas of the assembly. The thermal isolation is achieved by forming a boundary of dielectric material through the thickness of the interposer, the periphery of the dielectric defining the boundary between the thermally isolated region and the remainder of the assembly. A thermo-electric cooler can be used in conjunction with the temperature-sensitive device(s) to stabilize the operation of these devices.

Abstract: The laser mount arrangement can have a laser bar and a driver positioned adjacent to one another and secured against a connection face of a heat sink base. The heat sink base is connected to and forms a first electrical connection between the laser bar and the driver. A second electrical connection is also provided between the laser bar and the driver opposite the heat sink base, which can be in the form of a flexible metal sheet with a narrow upward fold. This arrangement can provide a low inductance path for the current.

Abstract: A conduction cooled high power semiconductor laser and a method for fabricating the same are provided. The conduction cooled high power semiconductor laser comprises a heat sink (2) and one or more semiconductor laser units (1). The semiconductor laser unit consists of a laser chip (3), a substrate (4) bonded to the laser chip for heat dissipation and electrical connection, and an insulation plate (5) soldered to the substrate for insulation and heat dissipation. The semiconductor laser unit is soldered on the heat sink with the insulation plate therebetween. The semiconductor laser unit may be tested, aged, and screened in advance, and thereby the yield of the lasers can be improved and the manufacturing costs can be reduced. The laser has desirable heat dissipation performance, high reliability, and is applicable to high temperature and other complex and volatile environments.

Abstract: A light-emitting device module includes a temperature variable device including a temperature control surface subjected to temperature control, a light-emitting device including a first electrode and mounted on a portion of the temperature control surface, a first terminal for supplying electric power to the first electrode, and a wire that causes the first terminal and the first electrode to conduct. The wire is thermally connected to the other portion of the temperature control surface.

Abstract: A silicon-based thermal energy transfer apparatus that aids dissipation of thermal energy from a heat-generating device, such as an edge-emitting laser diode, is provided. In one aspect, the apparatus comprises a base portion and a support portion. The base portion is made of silicon and includes a first primary surface. The first primary surface includes at least first and second V-notch grooves thereon. The support portion is made of silicon and includes at least first and second edges that are interlockingly received in the first and second V-notch grooves when the support portion is mounted on the base portion.

Abstract: A laser system includes a laser element, a pump source configured to input light to the laser element, a first cooling circuit and a second cooling circuit. The first cooling circuit includes a first pump configured to drive a first flow of cooling liquid through a first fluid pathway, a first primary heat exchanger configured to cool the first flow of cooling liquid, and a laser element heat exchanger configured to remove heat from the laser element using the first flow of cooling liquid. The second cooling circuit includes a second pump configured to drive a flow of cooling liquid through a second fluid pathway, a second primary heat exchanger configured to cool the second flow of cooling liquid, and a pump source heat exchanger configured to remove heat from the pump source using the first and second flows of cooling liquid.

Abstract: A method, and systems to implement the method, for reducing slow axis divergence in a laser diode bar including tailoring a power deposition profile across the emitter so as to reduce thermal gradients, thereby resulting in a substantially (nearly) uniform temperature across the width of the emitter.