Abstract: An optically pumped semiconductor apparatus having a surface-emitting semiconductor body (1) which has a radiation passage area (1a) which faces away from a mounting plane of the semiconductor body (1), and an optical element (7) which is suitable for directing pump radiation (17) onto the radiation passage area (1a) of the semiconductor body (1).

Abstract: An array of light valves switch light by enabling and disabling total internal reflection (TIR) on a surface of the light valve. The disabling of the TIR is accomplished by putting another optical element in contact with the surface and then diffusing or changing the direction of the light. The mechanical mechanism to move the optical element is a simple one in that it only moves the optical element a small distance to change the valve from a first position to a second position.

Abstract: A projector includes: a light emitting device; a light modulation device adapted to modulate a light beam emitted from the light emitting device; and a projection device adapted to project the image formed by the light modulation device, wherein the light emitting device includes a light emitting element formed of a super luminescent diode, and adapted to emit light, and a base supporting the light emitting element with first and second reflecting surfaces to reflect the light emitted from the light emitting element. The light emitting element emits the light from first and second end surfaces. Directions of first and second outgoing light respectively emitted from the first and second end surfaces are opposite to each other. Directions of the first and second reflected light respectively reflected by the first and second reflecting surfaces are the same as each other.

Abstract: The invention relates to a laser source with an external cavity generating a useful laser beam (Fu), that comprises at least one laser diode DL (10) mounted in an extended optical cavity (30, 82) defined between two reflecting surfaces (92, 48) forming an optical path for a laser beam Fd generated by the laser diode DL, a mode selection filter (44, 86) in the optical path of the cavity for selecting a resonance mode from a range of resonance modes of the laser beam in the cavity.

Abstract: A compact solid state laser that generates multiple wavelengths and multiple beams that are parallel, i.e., bore-sighted relative to each other, is disclosed. Each of the multiple laser beams can be at a different wavelength, pulse energy, pulse length, repetition rate and average power. Each of the laser beams can be turned on or off independently. The laser is comprised of an optically segmented gain section, common laser resonator with common surface segmented cavity mirrors, optically segmented pump laser, and different intra-cavity elements in each laser segment.

Abstract: A two-dimensional photonic crystal surface-emitting laser light source producing a beam without side lobes is provided. A window-shaped electrode having a central window devoid of the electrode material is provided on a device substrate. A mount surface electrode smaller than the electrode including the window is provided on a mount surface. The distance between the substrate and the active layer is larger than that between the mount surface and the active layer. When a voltage is applied, electric charges are injected into the active layer and emission is obtained. Light having a specific wavelength is amplified by a two-dimensional photonic crystal and extracted through the window without side lobes due to interference. The positioning of the active layer close to the mount surface significantly enhances the heat-radiating effect.

Abstract: A multi-pass optical cell with an actuator for actuating a reflective surface is provided. In one preferred embodiment, an apparatus is provided comprising a first reflective surface, a second reflective surface, and a support structure supporting the first and second reflective surfaces. The support structure positions the first and second reflective surfaces to create an optical cell. The apparatus also comprises a source and a detector, which are positioned such that light emitted from the source is reflected in the optical cell at least one time between the first and second reflective surfaces before reaching the detector. The apparatus further comprises an actuator coupled with and operative to actuate the first reflective surface. In some embodiments, the actuator rotates the first reflective surface. Also, in some embodiments, the multi-pass optical cell is an open path multi-pass optical cell, while, in other embodiments, the multi-pass optical cell is a closed path multi-pass optical cell.

Abstract: A laser device includes a substrate, a lower cladding layer on the substrate, an active layer on the lower cladding layer, an upper cladding layer on the active layer, and a second order diffraction grating in a layer above the active layer and having dimensions of at least 100 ?m by 100 ?m. The second order diffraction grating diffracts and directs light generated in the active layer in a direction generally perpendicular to the longitudinal direction of the upper cladding layer. A laser device further includes a first reflective film on a first end face of a resonator, and a second reflective film on a second end face of the resonator, the second end face being located at the opposite end of the resonator to the first end face.

Abstract: A wavelength-selectable laser device providing spatially-selectable wavelength(s) may be used to select one or more wavelengths for lasing in a tunable transmitter or transceiver, for example, in a wavelength division multiplexed (WDM) optical system such as a WDM passive optical network (PON). The wavelength-selectable laser device uses a dispersive optical element, such as a diffraction grating, to disperse light emitted from a laser emitter and to direct different wavelengths of the light toward a reflector at different spatial positions such that the wavelengths may be selected by allowing light to be reflected from selected spatial position(s) back into the laser emitter. Thus, the reflected light with a wavelength at the selected spatial position(s) is allowed to complete the laser cavity.

Abstract: A wavelength-selectable laser device generally includes an array of laser emitters and a filtered external cavity for filtering light emitted from the laser emitters and reflecting different wavelengths back to each of the laser emitters such that lasing occurs at different wavelengths for each of the laser emitters. Each laser emitter includes a gain region that emits light across a plurality of wavelengths including, for example, channel wavelengths in an optical communication system. The filtered external cavity may include a dispersive optical element that receives the light from each of the laser emitters at different angles and passes or reflects different wavelengths of the light at different angles such that only wavelengths associated with the respective laser emitters are reflected back to the respective laser emitters. By selectively emitting light from one or more of the laser emitters, one or more channel wavelengths may be selected for lasing and transmission.

Abstract: A vertical cavity surface emitting laser element as described herein can suppress of any dislocation, when a distributed Bragg reflector (DBR) mirror is formed on the onto a substrate (1). The vertical cavity surface emitting laser can be designed so that an average of strain in the DBR mirror (2) and a layer thickness of the DBR mirror (2) are in reference to a curvature of the substrate (1) in order to satisfy a predetermined condition, and then nitrogen can be added into the DBR mirror (2) with a composition that corresponds to a designed average of strain in the DBR mirror (2). For example, the average composition of nitrogen can be designed to be between 0.028% and 0.390%.

Abstract: In accordance with the present invention, a compact laser system with nearly continuous wavelength scanning is presented. In some embodiments, the compact laser system can be scanned over a broad range. In some embodiments, the compact laser system can be scanned at high scan rates. In some embodiments, the compact laser system can have a variable coherence length. In particular, embodiments with wavelength scanning over 140 nm with continuously variable scan rates of up to about 1 nm/?s, and discrete increase in scan rates up to about 10 nm/?s, and variable coherence lengths of from 1 mm to about 30 mm can be achieved.

Abstract: Disclosed is a laser device. The laser device includes a pulse generator which irradiates a laser beam between a high reflector mirror and an output coupler mirror to amplify and resonate the laser beam, a pulse output section which receives a laser beam pulse amplified and resonated through the output coupler mirror to output the laser beam pulse, and a Q switch which moves backward or forward in a direction perpendicular to a path of the laser beam formed between the pulse generator and the high reflector mirror. The output coupler mirror includes first and second mirrors provided on a base plate. Positions of the first and second mirrors are selectively changed as the Q switch moves backward or forward.

Abstract: A laser system includes a first source and a second source for generating a first laser beam and a second laser beam, respectively, and a mirror arrangement including a first interleaving laser mirror with a high reflecting area configured to reflect the first laser beam and a first high transmitting area configured to transmit the second laser beam.

Abstract: A passively mode-locked picosecond laser device comprising a pump source, a laser crystal, a laser cavity, a mode-locked output structure is provided. In the device, the pump source is placed at the side of the incident end surface of the laser crystal; the laser cavity includes a plane reflective mirror and a first plano-concave mirror, the reflective mirror is placed opposite to the concave surface of the plano-concave mirror and located on the position of the focal radius of the plano-concave mirror. The normal direction of the reflective mirror and the axis of the plano-concave mirror form a small angle therebetween; the laser generated from the laser crystal oscillates in the laser cavity, and output through the mode-locked output structure. The device uses a stable cavity design of the equivalent confocal cavity, which can increase the optical path, reduce the repetition frequency, and significantly reduce the cavity length and volume.

Abstract: A system and method for addition of broad-area semiconductor laser diode arrays are described. The system can include an array of laser diodes, a V-shaped external cavity, and grating systems to provide feedback for phase-locking of the laser diode array. A V-shaped mirror used to couple the laser diode emissions along two optical paths can be a V-shaped prism mirror, a V-shaped stepped mirror or include multiple V-shaped micro-mirrors. The V-shaped external cavity can be a ring cavity. The system can include an external injection laser to further improve coherence and phase-locking.

Abstract: High-power, phased-locked, laser arrays as disclosed herein utilize a system of optical elements that may be external to the laser oscillator array. Such an external optical system may achieve mutually coherent operation of all the emitters in a laser array, and coherent combination of the output of all the lasers in the array into a single beam. Such an “external gain harness” system may include: an optical lens/mirror system that mixes the output of all the emitters in the array; a holographic optical element that combines the output of all the lasers in the array, and an output coupler that selects a single path for the combined output and also selects a common operating frequency for all the coupled gain regions.

Abstract: A surface-emitting laser device is disclosed that includes a substrate connected to a heat sink; a first reflective layer formed of a semiconductor distributed Bragg reflector on the substrate; a first cavity spacer layer formed in contact with the first reflective layer; an active layer formed in contact with the first cavity spacer layer; a second cavity spacer layer formed in contact with the active layer; and a second reflective layer formed of a semiconductor distributed Bragg reflector in contact with the second cavity spacer layer. The first cavity spacer layer includes a semiconductor material having a thermal conductivity greater than the thermal conductivity of a semiconductor material forming the second cavity spacer layer.

Abstract: A device having a light cavity includes, at one end, a plasmonic reflector having a grating surface for coupling incoming light into traverse plasmon waves and for coupling the traverse plasmon wave into broaden light, the surface serving to redistribute light within the cavity, the reflector being well suited for use in laser diodes for redistributing filamental cavity laser light into spatially broaden cavity laser light for translating multimodal laser light into unimodal laser light for improved reliability and uniform laser beam creation.

Abstract: A surface emitting laser diode comprises a substrate, a lower reflector formed over the substrate, an active layer formed over the lower reflector, an upper reflector formed over the active layer, a current restrict structure including a current confinement region surrounded by insulation region. The current restrict structure is disposed in an upper reflector or between an active layer and the upper reflector, and an upper electrode formed over the upper reflector includes an aperture which corresponds to an emission region from which light is emitted in a first direction perpendicular to a surface of a substrate. The emission region and the current restrict structure including the current confinement region are selectively configured to obtain high single transverse mode, stabilized polarization direction, isotropic beam cross section and small divergence angle, while allowing the device to he manufactured with high yield rate.

Abstract: External cavity laser (ECL) systems and methods for measuring the wavelength of the ECL by using a portion of the positional light received by the position sensitive detector (PSD) to determine the position of a wavelength tuning element (such as a diffraction grating or an etalon), for determining the longitudinal laser mode or power output of the laser from a portion of the laser light received by a beam-shearing mode sensor, and by using a non-output beam(s) from a transmissive diffraction grating in the ECL to monitor the external cavity laser.

Abstract: A semiconductor laser that includes: a substrate; a first semiconductor multilayer reflector of a first conductive type formed on the substrate; an active region formed on the first semiconductor multilayer reflector; a second semiconductor multilayer reflector of a second conductive type formed on the active region; and an intermediate semiconductor layer of a first conductive type or a second conductive type formed under the first semiconductor multilayer reflector or above the second semiconductor multilayer reflector.

Abstract: A laser light source 1 is provided with a first reflection mirror 11, a laser medium 12, an aperture 13, an output mirror 14, a half mirror 15, a light beam diameter adjuster 16, and a second reflection mirror 17, and outputs laser oscillation light 31 reflected by the half mirror 15 to the outside. The main resonator is composed by the first reflection mirror 11 and the output mirror 14 disposed so as to be opposed to each other with the laser medium 12 placed therebetween. The external resonator is composed by the output mirror 14 and the second reflection mirror 17 disposed so as to be opposed to each other. The second reflection mirror 17 is configured such that it gives amplitude or phase variations to respective positions in the section of a light beam when the light is reflected, the second reflection mirror presents an amplitude or phase variation distribution, and determines the transverse mode of the laser oscillation light 31 based on the amplitude or phase variation distribution.

Abstract: The present invention relates to a rotationally asymmetric chaotic optical multi-pass cavity useful in optical gas sensing spectroscopy, optical delay lines, and laser amplification systems, for example. The cavity may include a single closed mirror having a light reflective surface that is deformed in two orthogonal directions and more particularly, but not exclusively, in the shape of a quadrupole in both horizontal and vertical planes. The cavity includes a light entry port and a light exit port which may be the same or separate ports, as well as a gas inlet and a gas outlet. The optical path length, the beam divergence rate, and the spot pattern are controlled by selecting the cavity deformation coefficients and the input beam direction to achieve the desired beam path and beam quality.

Abstract: A fiber laser of an MOPA type includes an MO which is a laser oscillator for generating seed light, a PA which is a light amplifier connected to a rear stage of the MO, for amplifying and outputting laser light emitted from the MO, and a reflection device which is provided between the MO and the PA. According to the present invention, the MOPA type fiber laser can decrease the peak value of the pulse which is emitted toward the MO or the pump light source by self-oscillation or reflection, and makes it unlikely that the pump light source or the MO will be damaged.

Abstract: A tunable pulsed laser source comprising a seed source adapted to generate a seed signal and an optical circulator. The optical circulator includes a first port coupled to the seed source, a second port, and a third port. The laser source also includes an amplitude modulator characterized by a first side and a second side. The first side is coupled to the second port of the optical circulator. The laser source further includes a first optical amplifier characterized by an input end and a reflective end including a spectral-domain reflectance filter. The input end is coupled to the second side of the amplitude modulator. Moreover, the laser source includes a second optical amplifier coupled to the third port of the optical circulator.

Abstract: A laser diode device operable at a one or more wavelength ranges. The device has a first waveguide provided on a non-polar or semipolar crystal plane of gallium containing material. In a specific embodiment, the first waveguide has a first gain characteristic and a first direction. In a specific embodiment, the first waveguide has a first end and a second end and a first length defined between the first end and the second end. The device has a second waveguide provided on a non-polar or semipolar crystal plane of gallium containing material. In a specific embodiment, the second waveguide has a second gain characteristic and a second direction. In a specific embodiment, the second waveguide has a first end, a second end, and a second length defined between the first end and the second end. In a specific embodiment, the second waveguide has the first end being coupled to the first end of the first waveguide. The second length is in a different direction from the second length.

Abstract: Laser light wavelength control is provided by periodically predicting a next position of a light controlling prism using a model of the prism's motion characteristics. The prediction is then updated if a measurement of laser output wavelength is obtained. However, because the predictions are made without waiting for a measurement, they can be made more frequently than the laser firing repetition rate and the prism can be repositioned at discrete points in time which can occur more frequently than the laser firing events. This also reduces performance degradation which may be caused by being one pulse behind a laser measurement and the resultant laser control signal being applied.

Abstract: Surface emitting laser arrays with intra-cavity harmonic generation are coupled to an optical system that extracts harmonic light in both directions from an intra-cavity nonlinear optical material in such a way that the focusing properties of the light beams are matched.

Abstract: A photonic crystal that can spatially control the resonance efficiency and reduce the leakage of light in transversal directions and a surface emitting laser that can be formed by using such a photonic crystal are provided. The photonic crystal has a first region and a second region having a same periodic structure as fundamental structures thereof and defects are introduced into the periodic structure of the first region, which is arranged around the second region.

Abstract: There is provided a mode-locked laser device including: a resonator; a solid-state laser medium that is disposed in the resonator and outputs oscillation light in accordance with the incidence of excitation light; a saturable absorber that is disposed in the resonator and induces soliton mode-locking; a group velocity dispersion correction component that is disposed in the resonator and controls group velocity dispersion in the resonator; and an excitation portion that causes excitation light to be incident at the solid-state laser medium, wherein a resonator length of the resonator is at least a resonator length with which soliton mode-locking is inducible and is less than a resonator length with which non-soliton mode-locking is inducible.

Abstract: A surface emitting laser which is configured by laminating on a substrate a lower reflection mirror, an active layer, and an upper reflection mirror, which includes, in a light emitting section of the upper reflection mirror, a structure for controlling reflectance that is configured by a low reflectance region and a concave high reflectance region formed in the central portion of the low reflectance region, and which oscillates at a wavelength of ?, wherein the upper reflection mirror is configured by a multilayer film reflection mirror based on a laminated structure formed by laminating a plurality of layers, the multilayer film reflection mirror includes a phase adjusting layer which has an optical thickness in the range of ?/8 to 3?/8 inclusive in a light emitting peripheral portion on the multilayer film reflection mirror, and an absorption layer causing band-to-band absorption is provided in the phase adjusting layer.

Abstract: A laser oscillator includes: a optical resonator having an orthogonal mirror and a partial reflection mirror; a laser gas acting as a laser medium; and a 90-degree folding mirror acting as a polarization selecting element. The orthogonal mirror has two reflecting surfaces orthogonal to each other. The 90-degree folding mirror is arranged such that the polarization direction of the laser oscillated light is parallel to the reference axis set in a plane perpendicular to an optical axis of the optical resonator. The orthogonal mirror is arranged such that the polarization direction of the laser oscillated light is parallel to the valley line of the orthogonal mirror. This configuration can compensate anisotropy of optical characteristics in a laser medium, and stably generate linearly polarized laser light having excellent isotropy in a simple manner.

Abstract: The horizontal cavity surface emitting laser includes a cavity structure portion including a stacked structure of a first conduction type clad layer, an active layer and a second conduction type clad layer stacked over a semiconductor substrate and causing light generated by the active layer to be reflected or resonated, an optical waveguide layer provided at part of the semiconductor substrate and guiding the light, a reflector provided in the optical waveguide layer, for reflecting the light and emitting the light from the back surface of the semiconductor substrate, and a condensing lens provided at the back surface thereof and focusing the reflected light. The back surface thereof has a groove provided with the condensing lens and a terrace-like portion disposed below the cavity structure portion and has a terrace shape with the cleavage direction along a longitudinal direction thereof provided along a cleavage direction of the semiconductor substrate.

Abstract: Narrow surface corrugated gratings for integrated optical components and their method of manufacture. An embodiment includes a grating having a width narrower than a width of the waveguide on which the grating is formed. In accordance with certain embodiments of the present invention, masked photolithography is employed to form narrowed gratings having a desired grating strength. In an embodiment, an optical cavity of a laser is formed with a reflector grating having a width narrower than a width of the waveguide. In another embodiment an integrated optical communication system includes one or more narrow surface corrugated gratings.

Abstract: The present invention provides a Vertical Cavity Surface Emitting Laser including: a first multilayer film reflector; an active layer having a light emission region; a second multilayer film reflector; and a reflectance adjustment layer in this order on a substrate side. The first multilayer film reflector and the second multilayer film reflector have a laminated structure in which reflectance of oscillation wavelength ?x is almost constant without depending on temperature change. The active layer is made of a material with which a maximum gain is obtained at temperature higher than ambient temperature. The reflectance adjustment layer has a laminated structure in which difference ?R(=Rx?Ry) between reflectance Rx of a region opposed to a central region of the light emission region and reflectance Ry of a region opposed to an outer edge region of the light emission region is increased associated with temperature increase from ambient temperature to high temperature.

Abstract: Embodiments are directed to systems and methods for adjusting a wavelength, bandwidth or both. Such systems and methods may be applicable to laser beams within a laser cavity or amplifier. For some embodiments, such systems and methods may be used to allow a user to set a desired wavelength and bandwidth of a short pulse laser system for operation at those parameters without further adjustment by the user.

Abstract: An optical coherence analysis system comprising: a first swept source that generates a first optical signal that is tuned over a first spectral scan band, a second swept source that generates a second optical signal that is tuned over a second spectral scan band, a combiner for combining the first optical signal and the second optical signal for form a combined optical signal, an interferometer for dividing the combined optical signal between a reference arm leading to a reference reflector and a sample arm leading to a sample, and a detector system for detecting an interference signal generated from the combined optical signal from the reference arm and from the sample arm. In embodiments, the swept sources are tunable lasers that have shared laser cavities.

Abstract: A laser system including two laser amplifier modules, each comprising a solid-state laser gain material (LGM) disk, and a multi-pass optical assembly comprising a plurality of relay mirrors. The relay mirrors are grouped in two relay mirror groups. Individual relay mirrors are arranged to pass a laser beam from the first LGM disk to the second LGM disk and back to the first LGM disk, and so on. The laser beam is amplified with each pass through the LGM disk. The relay mirrors may be arranged to repeat the process of passing the laser beam to and from the two LGM disks arbitrary number of times until the desired laser beam amplification is attained. At that point, the laser beam may either released from the laser system, reflected back causing it to retrace its path through the system. This configuration increases the effective gain and improves laser power extraction.

Abstract: An external resonator type wavelength tunable laser has a laser medium, a dispersion system which spatially disperses light emitted from the laser medium by wavelength, and a wavelength selecting system having a reflecting surface which selectively reflects a part of the light which is reflected by the reflecting surface as a return light, and the wavelength selecting system is structured so that the inverse of a number of a wavelength of the return light linearly changes with time.

Abstract: A tactical radiating device for directed energy includes at least two generators of high energy directed beams. At least one beam combining system combines high energy directed beams emitted by the generators into a combined high energy beam. A focusing device focuses the combined high energy beam.

Abstract: Femtosecond pulse trains in waveguide lasers with high fundamental repetition rates are achieved by exploiting the nonlinearity in the waveguide. Components of the apparatus include an optical resonator, a saturable absorber for starting and stabilizing mode-locking, and a gain element. Part of the laser cavity or the entire laser cavity is made of waveguide or fiber (collectively called “waveguide” herein). The net dispersion of the laser cavity can be anomalous. This anomalous dispersion in combination with the positive self-phase modulation nonlinearity in the waveguide creates soliton formation to shorten the pulse duration in the invented lasers. Conversely, a normal dispersive waveguide with negative self-phase modulation nonlinearity can also be used.

Abstract: A laser device includes an outcoupling mirror, a laser medium, a phase-conjugate mirror based on stimulated Brillouin scattering, and an end mirror all arranged along an optical axis of the laser device. A controllable modulator is positioned between the phase-conjugate mirror and the end mirror. The outcoupling mirror and the end mirror form a start cavity. The outcoupling mirror and the phase-conjugate mirror form a main cavity.

Abstract: A laser-induced optical wiring apparatus is provided wherein optical wiring is realized by digital operations of a laser oscillator. The apparatus includes optical ring resonator formed of a loop-shaped optical waveguide on substrate. At least two optical gain sections are provided on the optical ring resonator. When each optical gain section is activated, a laser oscillator including the optical ring resonator and optical gain sections is enabled to oscillate. In this state, the gain of at least one of the optical gain sections is changed in accordance with an input signal, thereby changing the optical route gain of the optical ring resonator to change the oscillation state of the laser oscillator. A change in the laser oscillation state is detected by the optical gain section other than the at least one optical gain section, whereby an output signal is acquired.

Abstract: In a GaN-based laser device having a GaN-based semiconductor stacked-layered structure including a light emitting layer, the semiconductor stacked-layered structure includes a ridge stripe structure causing a stripe-shaped waveguide, and has side surfaces opposite to each other to sandwich the stripe-shaped waveguide in its width direction therebetween. At least part of at least one of the side surfaces is processed to prevent the stripe-shaped waveguide from functioning as a Fabry-Perot resonator in the width direction.

Abstract: In a structure having a two-dimensional photonic crystal in which structures having different refractive indices are disposed at a two-dimensional period and comprising a structure emitting in a direction perpendicular to a resonance direction of light propagating in the in-plane direction of the two-dimensional photonic crystal, wherein the structure comprises a one-dimensional photonic crystal in which components having different refractive indices are arranged at a one-dimensional period, and, the light propagating in the in-plane direction of the two-dimensional photonic crystal is reflected by a photonic band edge of the one-dimensional photonic crystal.

Abstract: In an external cavity wavelength tunable laser device including an external cavity (20) which includes a semiconductor optical amplifier (2) and performs laser oscillation operation by feeding back external light, a wavelength tunable mirror (7) having at least a single peak reflection spectrum characteristic within a laser wavelength tuning range is placed on one end of the external cavity (20), and a Fabry Perot mode interval determined by the effective length of the external cavity (20) is not less than 1/10 times and not more than 10 times the reflection band full width half maximum of the wavelength tunable mirror (7).

Abstract: A pulsed light generator of the invention includes: an excitation light source; a fiber grating into which excitation light from the excitation light source enters; a rare-earth doped optical fiber optically coupled with the fiber grating, in which a rare-earth element is doped into a core, serving as an optical transmitting section; an optical switch including a deflection element for causing a Q-switching operation; a first optical fiber that causes light from the rare-earth doped optical fiber to enter into the optical switch; and a second optical fiber for waveguiding pulsed light output from the optical switch. One surface side of the optical switch, into which light enters, is subjected to anti-reflection treatment with a reflectance with respect to a wavelength of the pulsed light output from the optical switch being 0.1% or less.

Abstract: A mode-locked laser employs a coupled-polarization scheme for efficient longitudinal pumping by reshaped laser diode bars. One or more dielectric polarizers are configured to reflect a pumping wavelength having a first polarization and to reflect a lasing wavelength having a second polarization. An asymmetric cavity provides relatively large beam spot sizes in gain medium to permit efficient coupling to a volume pumped by a laser diode bar. The cavity can include a collimation region with a controlled beam spot size for insertion of a saturable absorber and dispersion components. Beam spot size is selected to provide stable mode locking based on Kerr lensing. Pulse durations of less than 100 fs can be achieved in Yb:KGW.

Abstract: The present invention is directed to providing an environmentally stable, ultra-short pulse source. Exemplary embodiments relate to passively modelocked ultra-short fiber lasers which are insensitive to temperature variations and which possess only negligible sensitivity to pressure variations. Further, exemplary embodiments can be implemented in a cost-effective manner which render them commercially practical in unlimited applications. Arbitrary fiber lengths (e.g., on the order of 1 millimeter to 1 kilometer, or greater) can be used to provide an ultra-short pulse with a cost-effective architecture which is commercially practical.