Abstract: A method for manufacturing a conductive wire includes conducting a continuous casting of a conductive alloy material at a casting rate of not less than 40 mm/min and not more than 200 mm/min to form a conductive wire with a primary diameter, the conductive alloy material containing not more than 1.0 mass % of an added metal element, reducing a diameter of the conductive wire with the primary diameter to form a conductive wire with a secondary diameter, heat treating the conductive wire with the secondary diameter so that tensile strength thereof is reduced to not less than 90% and less than 100% of tensile strength before the heat treating, and reducing a diameter of the conductive wire with the secondary diameter and the reduced tensile strength to generate a logarithmic strain of 7.8 to 12.0 therein to form a conductive wire with a tertiary diameter.

Abstract: Methods for forming CIGS films are provided. According to an aspect of the invention, a method of forming a CIGS film includes a precursor step, which includes simultaneously evaporating Cu, In, Ga, Se, and Sb onto a substrate. The Se is incident on the substrate at a rate of at least 20 ?/s. The method also includes a selenization step, which includes evaporating Se over the substrate after the precursor step.

Abstract: [Problems to be Solved] To provide a sputtering target that is capable of forming a Cu—Ga film to which Na is favorably added by a sputtering method, and a method for producing the same. [Means to Solve the Problems] The sputtering target is provided wherein 20 to 40 at % of Ga, 0.05 to 2 at % of Na, and 0.025 to 1.0 at % of S are contained and a remaining portion has a component composition consisting of Cu and unavoidable impurities. Also, a method for producing the sputtering target includes the step of hot pressing a mixed powder of Na2S powder and Cu—Ga alloy powder or a mixed powder of Na2S powder, Cu—Ga alloy powder, and pure Cu powder in a vacuum atmosphere or an inert gas atmosphere or sintering a mixed powder of Na2S powder and Cu—Ga alloy powder or a mixed powder of Na2S powder, Cu—Ga alloy powder, and pure Cu powder by hot isostatic pressing.

Abstract: [Problems to be Solved] To provide a sputtering target that is capable of forming a Cu—Ga film to which Na is favorably added by a sputtering method, and a method for producing the same. [Means to Solve the Problems] The sputtering target is provided wherein 20 to 40 at % of Ga, 0.05 to 2 at % of Na, and 0.025 to 1.0 at % of S are contained and a remaining portion has a component composition consisting of Cu and unavoidable impurities. Also, a method for producing the sputtering target includes the step of hot pressing a mixed powder of Na2S powder and Cu—Ga alloy powder or a mixed powder of Na2S powder, Cu—Ga alloy powder, and pure Cu powder in a vacuum atmosphere or an inert gas atmosphere or sintering a mixed powder of Na2S powder and Cu—Ga alloy powder or a mixed powder of Na2S powder, Cu—Ga alloy powder, and pure Cu powder by hot isostatic pressing.

Abstract: The present invention provides a flexible flat cable having high conductivity and high bending durability, and a method for manufacturing the same. The present invention is a flexible flat cable comprising conductors and insulating films applied over the conductors, wherein the conductor is comprised of at least one additive element selected from the group consisting of magnesium (Mg), zirconium (Zr), niobium (Nb), calcium (Ca), vanadium (V), nickel (Ni), manganese (Mn), titanium (Ti), and chromium (Cr); 2 mass-ppm or more of oxygen; and the balance being inevitable impurity and copper, wherein the conductor has such a recrystallized texture that the size of crystal grains in the inner area of the conductor is large and that of in the surface area thereof is smaller than that of the inner area, wherein both sides of the conductor are sandwiched between insulating films.

Abstract: A manufacturing method of ultrahigh purity copper is provided wherein, upon subjecting copper to high purification with the electrolytic method, an anode and a cathode are partitioned with an anion exchange membrane, anolyte is intermittently or continuously extracted and introduced into an active carbon treatment vessel, a chlorine-containing material is added to the active carbon treatment vessel so as to precipitate impurities as chloride, active carbon is subsequently poured in and agitated so as to adsorb the precipitated impurities, the adsorbed impurities are removed by filtration, and the obtained high purity copper electrolytic solution is intermittently or continuously introduced into the cathode side and electrolyzed. This technology enables the efficient manufacture of ultrahigh purity copper having a purity of 8N (99.999999 wt %) or higher from a copper raw material containing large amounts of impurities.

Abstract: Provided is a sputtering target for forming a phosphor film in an electroluminescence element, which can maintain high strength even when it is allowed to stand in the atmosphere for a long time. The target has a chemical composition of Al: 20 to 50 mass %, Eu: 1 to 10 mass %, and the remainder containing Ba and inevitable impurities, and has a structure wherein Ba in which Eu is solid-solubilized and Al form an intermetallic compound phase, wherein the intermetallic compound phase of Ba in which Eu is solid-solubilized and Al includes a BaAl4 intermetallic compound phase and a Ba7Al13 intermetallic compound phase, and Eu forms a solid solution with Ba in the BaAl4 intermetallic compound and in the Ba7Al13 intermetallic compound, respectively.

Abstract: High purity copper having a purity of 6N or higher, wherein content of each of the respective components of P, S, 0, and C is 1 ppm or less, and nonmetal inclusions having a particle size of 0.5 ?m or more and 20 ?m or less contained in the copper are 10,000 inclusions/g or less. As a result of using high purity copper or high purity copper alloy as the raw material from which harmful P, S, C, 0-based inclusions have been reduced and controlling the existence form of nonmetal inclusions, it is possible to reduce the occurrence of rupture of a bonding wire and improve the reproducibility of mechanical properties, or reduce the percent defect of a semiconductor device wiring formed by sputtering a high purity copper target with favorable reproducibility.

Abstract: The present invention relates to a nanocrystalline metallic material, particularly to nano-twin copper material with ultrahigh strength and high electrical conductivity and its preparation method. High-purity polycrystalline Cu material with a microstructure of roughly equiaxed submicron-sized grains (300-1000 nm) has been produced by pulsed electrodeposition technique, by which high density of growth-in twins with nano-scale twin spacing were induced in the grains. Inside each grain, there are high densities of growth-in twin lamellae. The twin lamellae with the same orientations are inter-parallel, and the twin spacing ranges from several nanometers to 100 nm with a length of 100-500 nm. This Cu material invented has more excellent performance than existing ones.

Abstract: A method of activating a hydrogen storage alloy. The method includes the step of contacting the hydrogen storage alloy with an aqueous solution of an alkali metal hydroxide where the concentration of the alkali metal hydroxide is at least about 42 weight percent. The method produces a hydrogen storage alloy with increased surface area.

Abstract: A method for producing a copper/palladium colloid catalyst useful for Suzuki couplings.

Abstract: The invention includes a sputtering target containing copper of a purity of at least about 99.999 wt. %, and at least one component selected from the group consisting of Ag, Sn, Te, In, B, Bi, Sb, and P dispersed within the copper. The total of Ag, Sn, Te, In, B, Bi, Sb, and P within the copper is from at least 0.3 ppm to about 10 ppm. The sputtering target has a substantially uniform grain size of less than or equal to about 50 micrometers throughout the copper and the at least one component.

Abstract: A physical vapor deposition target includes an alloy of copper and silver, with the silver being present in the alloy at from less than 1.0 at % to 0.001 at %. In one implementation, a physical vapor deposition target includes an alloy of copper and silver, with the silver being present in the alloy at from 50 at % to 70 at %. A physical vapor deposition target includes an alloy of copper and tin, with tin being present in the alloy at from less than 1.0 at % to 0.001 at %. In one implementation, a conductive integrated circuit metal alloy interconnection includes an alloy of copper and silver, with the silver being present in the alloy at from less than 1.0 at % to 0.001 at %. A conductive integrated circuit metal alloy interconnection includes an alloy of copper and silver, with the silver being present in the alloy at from 50 at % to 70 at %. A conductive integrated circuit metal alloy interconnection includes an alloy of copper and tin, with tin being present in the alloy at from less than 1.0 at % to 0.

Abstract: A method of activating a hydrogen storage alloy or a hydrogen storage alloy electrode. The method includes the step of contacting the hydrogen storage alloy or hydrogen storage alloy electrode with an aqueous solution of an alkali metal hydroxide where the concentration of the alkali metal hydroxide is at least about 40 weight percent. The method produces a hydrogen storage alloy and hydrogen storage alloy electrode with increased surface area.

Abstract: A rolled copper foil for flexible printed circuits contains not more than 10 ppm by weight of oxygen and has a softening-temperature rise index T defined as T=0.60[Bi]+0.55[Pb]+0.60[Sb]+0.64 [Se]+1.36[S]+0.32[As]+0.09[Fe]+0.02[Ni]+0.76[Te]+0.48[Sn]+0.16[Ag]+1.24[P] (each symbol in the brackets representing the concentration in ppm by weight of the element) in the range of 4 to 34. The concentrations of the elements are in the ranges of[Bi]<5, [Pb]<10, [Sb]<5, [Se]<5, [S]<15, [As]<5, [Fe]<20, [Ni]<20, [Te]<5, [Sn]<20, [Ag]<50, and [P]<15 (each symbol in the brackets representing the concentration in ppm by weight of the element).

Abstract: A silver colored alloy highly tarnish resistant, sterling silver is provided or having included therein: 90% to 92.5% by weight Silver; 5.75% to 7.5% by weight Zinc; 0.25% to less than 1% by weight Copper; 0.25% to 0.5% by weight Nickel; 0.1% to 0.25% by weight Silicon; and 0.0% to 0.5% by weight Indium.

Abstract: Novel compound semiconductors are of the general formula, X.sub.5 YZ.sub.4, wherein X is a member selected from the group consisting of Cu, Ag and mixtures thereof, Y is a member selected from the group consisting of Al, Ga, Tl and mixtures thereof, and Z is a member selected from the group consisting of Se, S, Te and mixtures thereof. Typical of the compound semiconductors are Cu.sub.5 AlSe.sub.4 and Ag.sub.4 AlSe.sub.4. These compound semiconductors are especially useful for making blue to UV light-emitting devices which include n-type and p-type compound semiconductor layers made of the above compound semiconductors.

Abstract: Machinable copper alloys having a reduced lead concentration are disclosed. An additive to the alloy accumulates both at the grain boundaries and intragranularly. The additive facilitates chip fracture or lubricates the tool. One additive is a mixture of bismuth and lead with the lead concentration below about 2% by weight.

Abstract: There is provided a high-conductivity copper alloy with excellent workability and heat resistance, characterized by the alloy consists essentially of, by weight, at least one element selected from the group consisting of______________________________________ 10-100 ppm In (indium), 10-1000 ppm Ag (silver), 10-300 ppm Cd (cadmium), 10-50 ppm Sn (tin), 10-50 ppm Sb (antimony), 3-30 ppm Pb (lead), 3-30 ppm Bi (bismuth), 3-30 ppm Zr (zirconium), 3-50 ppm Ti (titanium) and 3-30 ppm Hf (hafnium), ______________________________________and the balance copper. S (sulfur) and O (oxygen) as unavoidable impurities are controlled to amounts of less than 3 ppm S, and less than 5 ppm O, respectively. Other unavoidable impurities are controlled to less than 3 ppm in total amount. The alloy is very suitable for applications such as forming magnet wires and other very thin wires, lead wires for electronic components, lead members for tape automated bonding (TAB) and the like, and members for printed-circuit boards.

Abstract: The invention relates to a material for electrodes to be used in resistance welding. The working life of electrodes, particularly of those to be used in the spot welding of coated sheets, is now relatively short. The invention introduces a new electrode material in the form of a copper alloy containing, in addition to the conventional ingredients, at least 20 ppm tellurium or other chalcogene, such as selenium or sulphur; owing to this new electrode material according to the invention, the service life of an electrode increases substantially.

Abstract: Contact materials for vacuum switches with the base constituents copper and chromium and additive constituents containing tellurium or selenium and in which copper-telluride (Cu.sub.2 Te) or copper-selenide (Cu.sub.2 Se) are formed as a binary intermetallic phase are known. According to the invention, the additive constituent is a ternary intermetallic phase composed of copper, chromium and tellurium or copper, chromium and selenium with a tellurium or selenium content which is greater than that of the known binary intermetallic phases. This results in a reduction of the chopping currents in the contact pieces manufactured from the contact material according to the invention and causes the overvoltage performance to be enhanced.

Abstract: The invention relates to contact material for vacuum interrupter, and in order to be splendid in the breakdown voltage ability and increase the interrupting ability, a contact material is constituted by containing copper and chromium, and moreover adding one component selected from silicon, titanium, zirconium and aluminum as another component, and is used in a vacuum interrupter.

Abstract: The present invention relates to a copper wire for use in sound or image reproducing systems, such as audio, video and television systems, etc., and a method for manufacturing the same. The copper wire consists of high purity copper in which silver and sulfur contents are both not more than 0.5 ppm and preferably has a crystal grain size not less than 0.02 mm and is unidirectionally solidified or single crystallized. Such a copper wire is manufactured by continuously casting electrodeposited copper which has been obtained by refining by re-electrolysis of electrolytic copper, using a specially arranged casting apparatus having a mold projecting to an electrolytic bath.

Abstract: An enhanced machining oxygen-free copper alloy is provided which contains at least 0.02% by weight silver and from 25 to 100 parts per million sulfur. The copper alloy is anneal resistant and has sufficient ductility to permit cold working.

Abstract: New alloys of Cu.sub.x Ag.sub.(1-x) InSe.sub.2 (where x ranges between 0 and 1 and preferably has a value of about 0.75) and CuIn.sub.y Ga.sub.(1-y) Se.sub.2 (where y ranges between 0 and 1 and preferably has a value of about 0.90) in the form of single crystals with enhanced structure perfection, which crystals are substantially free of fissures are disclosed. Processes are disclosed for preparing the new alloys of Cu.sub.x Ag.sub.(1-x) InSe.sub.2. The process includes placing stoichiometric quantities of a Cu, Ag, In, and Se reaction mixture or stoichiometric quantities of a Cu, In, Ga, and Se reaction mixture in a refractory crucible in such a manner that the reaction mixture is surrounded by B.sub.2 O.sub.3, placing the thus loaded crucible in a chamber under a high pressure atmosphere of inert gas to confine the volatile Se to the crucible, and heating the reaction mixture to its melting point.

Abstract: The present invention eliminates the problems associated with the use of oxygen-free copper and other high-purity copper materials as bonding wires. In accordance with one aspect of the present invention, at least one rare earth element, or at least one element selected from the group consisting of Mg, Ca, Ti, Zr, Hf, Li, Na, K, Rb and Cs, or the combination of at least one rare earth element and at least one elemented selected from the above-specified group is incorporated in high-purity copper as a refining component in an amount of 0.1-100 ppm on a weight basis, and the high-purity copper is subsequently refined by zone melting. The very fine wire drawn from the so refined high-purity copper has the advantage that it can be employed in high-speed ball bonding of a semiconductor chip with a minimum chance of damaging the bonding pad on the chip by the ball forming at the tip of the wire.In accordance with another aspect of the present invention, 0.

Abstract: A highly conductive copper-based alloy containing 0.001 percent to 0.02 percent of tellurium, 0.05 percent to 0.3 percent of one element selected from iron and chromium, and 0 percent to 0.01 percent of phosphorous with the balance being copper and incidental impurities.

Abstract: A copper alloy for use in the manufacture of a radiator fin contains 10 to 150 ppm of tellurium and 20 to 110 ppm of phosphorus, both by weight, as well as copper and unavoidable impurities.

Abstract: A copper-based alloy is described consisting essentially of:______________________________________ Tin 25-225 ppm Tellurium or Selenium 25-225 ppm Phosphorus 10-50 ppm Copper Balance ______________________________________The alloys can be used in many forms, including sheet, strip, bar, rod and wire. Sheet stock made from this alloy is useful as automotive radiator fin stock. In addition, electrical components can be made from the alloy of this invention. All of these materials have thermal and electrical conductivity properties and softening temperatures equal to or better than the prior art alloys adapted for these applications. In addition, the alloys of this invention can utilize relatively inexpensive materials and do not present significant toxicity problems and are readily analzyed using common industrial analysis equipment.

Abstract: A lead material for semiconductor devices comprising from 0.4 to 4.0 wt % of Ni, from 0.1 to 1.0 wt % of Si, from 0.05 to 1.0 wt % of Zn, from 0.01 to 1.0 wt % of Mn, from 0.001 to less than 0.01 wt % of Mg, from 0.001 to less than 0.01 wt % of Cr, up to 0.003 wt % of S, and the balance of Cu and inevitable impurities. The material may further comprise up to 5 ppm of hydrogen and up to 5 ppm of oxygen.

Abstract: A contact material for a vacuum circuit breaker consists essentially of copper as the basic component, and, as the other components, 35% by weight or below of chromium and 50% by weight or below of niobium, the total quantity of chromium and niobium in said contact material being 10% by weight and above.

Abstract: A contact material for a vacuum circuit breaker consists essentially of copper as the basic component, and, as the other components, 35% by weight or below of chromium and 50% by weight or below of tantalum, the total quantity of chromium and tantalum in said contact material being 10% by weight and above.

Abstract: The present invention relates to novel tin bearing copper alloy compositions that possess a combination of high anneal resistance and high electrical cconductivity properties. These compositions contain about 0.025 to 0.15 weight percent free tin with a weight percent of combined tin that is 3.7 times the oxygen content. Selenium and/or tellurium additions of from 0.005 to 0.05 weight percent also contribute to or maintain the improved properties of the present invention.Other aspects of the invention relate to a process for preparing these anneal resistant, high electrical conductivity copper alloy compositions and an apparatus suitable for use as radiator fin, electrical connector, or commutator segment stock which is formed by such process.

Abstract: A process for the formation of copper anodes useful in the electrorefining of copper. Molten partially refined copper is subjected to controlled cooling such that the impurities coalesce into larger agglomerations and in the resulting solid partially refined copper are found segregated at the boundaries of the copper crystals. These larger agglomerations are less susceptible to dissolution in the electrolyte and to deposition or entrainment at the cathode. The process allows the use of a less refined copper starting material to achieve a comparable final cathode copper product.

Abstract: An improved copper base alloy having excellent thermal resistance and electric conductivity. The alloy consists essentially of from 0.0005 to 0.01 percent boron, a material selected from the group consisting of phosphorus from 0.001 to 0.01 percent, indium from 0.002 to 0.03 percent, tellurium from 0.001 to 0.06 percent and mixtures thereof, and the balance copper and inevitable impurities. The copper base alloy may further contain from 0.002 to 0.05 percent magnesium whereby the magnesium imparts further enhanced thermal resistance to the alloy.