Gallium, Indium, Or Thallium Base Patents (Class 420/555)
  • Patent number: 10036479
    Abstract: A fusible plug employs an alloy which comprises 5-8 mass % of Sn, 31-34 mass % of Bi, 0.2-4 mass % of Sb, and a remainder of In. The alloy melts at approximately 66-70° C. The alloy may further contain at most 2.0 mass % of at least one element selected from strengthening elements consisting of 0.1-1.0 mass % of Cu, 0.1-1.0 mass % of Ge, 0.1-0.7 mass % of Ag, 0.1-0.6 mass % of Au, 0.2-0.6 mass % of Zn, 0.002-0.1 mass % of Ni, and 0.01-0.1 mass % of a lanthanoid.
    Type: Grant
    Filed: April 14, 2005
    Date of Patent: July 31, 2018
    Assignee: SENJU METAL INDUSTRY CO., LTD.
    Inventors: Rikiya Kato, Tetsuro Kikuchi, Mutsumi Deguchi, Yasuaki Koiwa
  • Patent number: 9484651
    Abstract: A pane having a connection element, having; a substrate having an electrically conductive structure on at least a subregion of the substrate, the electrical connection element on at least a subregion of the electrically conductive structure, and a lead-free soldering compound which connects the electrical connection element to the electrically conductive structure in at least a subregion, wherein the lead-free soldering compound contains 58 to 62% by weight indium, 35 to 38% by weight tin, 1 to 3.5% by weight silver and 0.5 to 2% by weight copper.
    Type: Grant
    Filed: July 24, 2013
    Date of Patent: November 1, 2016
    Assignee: SAINT-GOBAIN GLASS FRANCE
    Inventors: Mitja Rateiczak, Bernhard Reul, Klaus Schmalbuch
  • Patent number: 9312147
    Abstract: A method of forming an on-chip heat sink includes forming a device on a substrate. The method also includes forming a plurality of insulator layers over the device. The method further includes forming a heat sink in at least one of the plurality of insulator layers and proximate to the device. The heat sink includes a reservoir of phase change material having a melting point temperature that is less than an upper limit of a design operating temperature of the chip.
    Type: Grant
    Filed: October 24, 2014
    Date of Patent: April 12, 2016
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventor: Mattias E. Dahlstrom
  • Patent number: 9028726
    Abstract: The present invention provides a sputtering target suitable for producing an amorphous transparent conductive film which can be formed without heating a substrate and without feeding water during the sputtering; which is easily crystallized by low-temperature annealing; and which has low resistivity after the crystallization. An oxide sintered compact containing an indium oxide as a main component, while containing tin as a first additive element, and one or more elements selected from germanium, nickel, manganese, and aluminum as a second additive element, with the content of tin which is the first additive element being 2-15 atom % relative to the total content of indium and tin, and the total content of the second additive element being 0.1-2 atom % relative to the total content of indium, tin and the second additive element.
    Type: Grant
    Filed: September 18, 2009
    Date of Patent: May 12, 2015
    Assignee: JX Nippon Mining & Metals Corporation
    Inventors: Masakatsu Ikisawa, Masataka Yahagi
  • Publication number: 20150122335
    Abstract: Disclosed are an ink composition for manufacturing a light absorption layer including metal nano particles and a method of manufacturing a thin film using the same, more particularly, an ink composition for manufacturing a light absorption layer including copper (Cu)-enriched Cu—In bimetallic metal nano particles and Group IIIA metal particles including S or Se dispersed in a solvent and a method of manufacturing a thin film using the same.
    Type: Application
    Filed: January 6, 2015
    Publication date: May 7, 2015
    Inventors: Seokhee YOON, Seokhyun YOON, Taehun YOON
  • Publication number: 20150125338
    Abstract: Identifying a stable phase of a binary alloy comprising a solute element and a solvent element. In one example, at least two thermodynamic parameters associated with grain growth and phase separation of the binary alloy are determined, and the stable phase of the binary alloy is identified based on the first thermodynamic parameter and the second thermodynamic parameter, wherein the stable phase is one of a stable nanocrystalline phase, a metastable nanocrystalline phase, and a non-nanocrystalline phase.
    Type: Application
    Filed: March 12, 2012
    Publication date: May 7, 2015
    Inventors: Heather Murdoch, Christopher A. Schuh
  • Publication number: 20150064483
    Abstract: A method of depositing a film of a metal having a volatilization temperature higher than 350° C., as well as, a composite material including the same are disclosed. The method can include providing the source material in a vacuum deposition processing chamber, and providing a substrate in the vacuum deposition processing chamber. The substrate can be spaced apart from, but in fluid communication with, the source material, and also maintained at a substrate temperature that is lower than the volatilization temperature. The method can also include reducing an internal pressure of the vacuum deposition processing chamber to a pressure between 0.1 and 14,000 pascals; volatilizing the source material into a volatilized metal by heating the source material to a first temperature that is higher than the volatilization temperature; and transporting the volatilized metal to the substrate using a heated carrier gas, whereby the volatilized metal deposits on the substrate and forms the metal film.
    Type: Application
    Filed: September 3, 2014
    Publication date: March 5, 2015
    Inventors: Mark E. Thompson, Francisco F. Navarro
  • Publication number: 20140376351
    Abstract: A device including a near field transducer, the near field transducer including gold (Au) and at least one other secondary atom, the at least one other secondary atom selected from: boron (B), bismuth (Bi), indium (In), sulfur (S), silicon (Si), tin (Sn), hafnium (Hf), niobium (Nb), manganese (Mn), antimony (Sb), tellurium (Te), carbon (C), nitrogen (N), and oxygen (O), and combinations thereof erbium (Er), holmium (Ho), lutetium (Lu), praseodymium (Pr), scandium (Sc), uranium (U), zinc (Zn), and combinations thereof and barium (Ba), chlorine (Cl), cesium (Cs), dysprosium (Dy), europium (Eu), fluorine (F), gadolinium (Gd), germanium (Ge), hydrogen (H), iodine (I), osmium (Os), phosphorus (P), rubidium (Rb), rhenium (Re), selenium (Se), samarium (Sm), terbium (Tb), thallium (Th), and combinations thereof.
    Type: Application
    Filed: June 24, 2014
    Publication date: December 25, 2014
    Inventors: Yuhang Cheng, Tong Zhao, Michael C. Kautzky, Ed F. Rejda, Kurt W. Wierman, Scott Franzen, Sethuraman Jayashankar, Sarbeswar Sahoo, Jie Gong, Michael Allen Seigler
  • Publication number: 20140371575
    Abstract: Multimodal optical and magnetic resonance imaging methods based on the use of persistent luminescence nanoparticles. Use of mesoporous persistent luminescence <<core-shell>> complexes for theranostic applications.
    Type: Application
    Filed: January 30, 2013
    Publication date: December 18, 2014
    Inventors: Thomas Maldiney, Cyrille Richard, Daniel Scherman, Didier Gourier, Bruno Viana, Aurelie Bessiere
  • Publication number: 20140348203
    Abstract: Provided in one embodiment is a method of identifying a stable phase of an ordering binary alloy system comprising a solute element and a solvent element, the method comprising: determining at least three thermodynamic parameters associated with grain boundary segregation, phase separation, and intermetallic compound formation of the ordering binary alloy system; and identifying the stable phase of the ordering binary alloy system based on the first thermodynamic parameter, the second thermodynamic parameter and the third thermodynamic parameter by comparing the first thermodynamic parameter, the second thermodynamic parameter and the third thermodynamic parameter with a predetermined set of respective thermodynamic parameters to identify the stable phase; wherein the stable phase is one of a stable nanocrystalline phase, a metastable nanocrystalline phase, and a non-nanocrystalline phase.
    Type: Application
    Filed: May 20, 2014
    Publication date: November 27, 2014
    Applicant: Massachusetts Institute of Technology
    Inventors: Heather A. Murdoch, Christopher A. Schuh
  • Publication number: 20140326849
    Abstract: A mechanical structure is provided with a crystalline superelastic alloy that is characterized by an average grain size and that exhibits a martensitic phase transformation resulting from a mechanical stress input greater than a characteristic first critical stress. A configuration of the superelastic alloy is provided with a geometric structural feature of the alloy that has an extent that is no greater than about 200 micrometers and that is no larger than the average grain size of the alloy. This geometric feature undergoes the martensitic transformation without intergranular fracture of the geometric feature.
    Type: Application
    Filed: September 13, 2012
    Publication date: November 6, 2014
    Applicant: MASSACHUSETTS INSTITUTE OF TECHNOLOGY
    Inventors: Christopher A. Schuh, Jose M. San Juan, Ying Chen
  • Publication number: 20140314617
    Abstract: A dental alloy contains palladium (Pd) and indium (In) for CAD/CAM machining. The dental alloy can further include one component selected from the group consisting of gold (Au), silver (Ag), nickel (Ni), cobalt (Co), and platinum (Pt). The dental alloy has a yield strength of 250 MPa to 450 MPa, breaking elongation of 2% to 8%, metal-ceramic adhesion of 20 MPa to 70 MPa, coefficient of linear thermal expansion of 14.0×10?6/K to 17.0×10?6/K, or density of 8 g/cm3 to 15 g/cm3.
    Type: Application
    Filed: April 13, 2012
    Publication date: October 23, 2014
    Applicant: CERAGEM BIOSYS CO., LTD.
    Inventors: Kyeong Jun Park, Jeong Jong Park, Sun Wook Cho
  • Publication number: 20140271343
    Abstract: A solder composition includes about 4% to about 25% by weight tin, about 0.1% to about 8% by weight antimony, about 0.03% to about 4% by weight copper, about 0.03% to about 4% by weight nickel, about 66% to about 90% by weight indium, and about 0.5% to about 9% by weight silver. The composition can further include about 0.2% to about 6% by weight zinc, and, independently, about 0.01% to about 0.3% by weight germanium. The composition can be used to solder an electrical connector to an electrical contact surface on a glass component.
    Type: Application
    Filed: May 28, 2014
    Publication date: September 18, 2014
    Applicant: Antaya Technologies Corp.
    Inventors: Jennie S. Hwang, John Pereira, Alexandra Mary Mackin, Joseph C. Gonsalves
  • Patent number: 8771592
    Abstract: A solder composition includes about 4% to about 25% by weight tin, about 0.1% to about 8% by weight antimony, about 0.03% to about 4% by weight copper, about 0.03% to about 4% by weight nickel, about 66% to about 90% by weight indium, and about 0.5% to about 9% by weight silver. The composition can further include about 0.2% to about 6% by weight zinc, and, independently, about 0.01% to about 0.3% by weight germanium. The composition can be used to solder an electrical connector to an electrical contact surface on a glass component.
    Type: Grant
    Filed: February 1, 2012
    Date of Patent: July 8, 2014
    Assignee: Antaya Technologies Corp.
    Inventors: Jennie S. Hwang, John Pereira, Alexandra Mary Mackin, Joseph C. Gonsalves
  • Publication number: 20140138155
    Abstract: A glazing is disclosed comprising at least one ply of glass having an electrically conductive component on at least one surface, and an electrical connector electrically connected to the electrically conductive component through a soldered joint, the solder of the joint having a composition comprising 0.5 wt % or more indium, wherein the electrical connector comprises a nickel plated contact for contacting the solder. Also disclosed are solders having a composition comprising 14 to 75 wt % In, 14 to 75 wt % Sn, to 5 wt % Ag, to 5 wt % Ni, and less than 0.1 wt % Pb. Also disclosed is use of a solder having a composition comprising 0.5 wt % or more indium to solder a nickel plated electrical connector to an electrically conductive component on the surface of a ply of glass. The aspects of the invention improve the durability of electrical connections on glazing.
    Type: Application
    Filed: May 2, 2012
    Publication date: May 22, 2014
    Applicants: PILKINGTON GROUP LIMITED, NIPPON SHEET GLASS CO., LTD., UCHIHASHI ESTEC CO., LTD., NISHINIHON SHOKO CO., LTD
    Inventors: Michael Lyon, Naotaka Ikawa, Kazuo Inada, Mamoru Yoshida, Takashi Muromachi, Kazuhisa Ono, Kozo Okamoto, Takashi Suzuki
  • Patent number: 8679635
    Abstract: Disclosed is a solder material which enables to realize a lower mounting temperature when an electronic component is mounted. Also disclosed are a solder paste and a conductive adhesive. Specifically disclosed is a solder material having a basic composition composed of Sn, Bi and In. This solder material may further contain at least one metal selected from the group consisting of Cu, Ge and Ni. A solder paste which enables to realize a low-temperature mounting can be obtained by blending a flux component into the solder material. A conductive adhesive which enables to realize a low-temperature mounting can be obtained by blending a resin component into the solder material.
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: March 25, 2014
    Assignee: Panasonic Corporation
    Inventors: Atsushi Yamaguchi, Kazuhiro Nishikawa, Hidenori Miyakawa
  • Publication number: 20130336837
    Abstract: A lead-free solder alloy for a vehicle glass according to the present invention contains 26.0 to 56.0 mass % of In, 0.1 to 5.0 mass % of Ag, 0.002 to 0.05 mass % of Ti, 0.001 to 0.01 mass % of Si and the balance being Sn. The lead-free solder alloy may optionally contain 0.005 to 0.1 mass % of Cu and 0.001 to 0.01 mass % of B. This solder alloy can suitably be applied vehicle glasses and show good joint strength to glass materials and high acid resistance, salt water resistance and temperature cycle resistance.
    Type: Application
    Filed: February 27, 2012
    Publication date: December 19, 2013
    Applicant: Central Glass Company, Limited
    Inventors: Mizuki Nishi, Takayuki Ogawa, Mitsuo Hori
  • Publication number: 20130333678
    Abstract: A railgun which has a conductive lubricant and system of delivery reduces the electrical resistance and friction of the armature-rail sliding contact, thereby decreasing the amount of heat generated at the electrical contact. The conductive lubricant may be a ternary alloy of bismuth, indium and tin. The system of delivery for the conductive lubricant may include a plurality of surface reservoirs formed in either the rail surface, the armature face, or both.
    Type: Application
    Filed: September 20, 2011
    Publication date: December 19, 2013
    Applicant: United States Government, as represented by the Secretary of the Navy
    Inventor: Peter Yaw-Ming Hsieh
  • Publication number: 20130319527
    Abstract: A Cu—Ga alloy sintered-compact sputtering target having a Ga concentration of 40 to 50 at % and Cu as the balance, wherein the sintered-compact sputtering target is characterized in that the relative density is 80% or higher, and the compositional deviation of the Ga concentration is within ±0.5 at % of the intended composition. A method of producing a Cu—Ga alloy sintered-compact sputtering target having a Ga concentration of 40 to 50 at % and Cu as the balance, wherein the method thereof is characterized in that Cu and Ga raw materials are melted and cooled/pulverized to produce a Cu—Ga alloy raw material powder, and the obtained material powder is further hot-pressed with a retention temperature being between the melting point of the mixed raw material powder and a temperature 15° C. lower than the melting point and with a pressure of 400 kgf/cm2 or more applied to the sintered mixed raw material powder.
    Type: Application
    Filed: August 10, 2011
    Publication date: December 5, 2013
    Applicant: JX NIPPON MINING & METALS CORPORATION
    Inventors: Tomoya Tamura, Hiroyoshi Yamamoto, Masaru Sakamoto
  • Publication number: 20130273247
    Abstract: A method for preparing semiconductor nanocrystals is disclosed. The method comprises adding a precursor mixture comprising one or more cation precursors, one or more anion precursors, and one or more amines to a ligand mixture including one or more acids, one or more phenol compounds, and a solvent to form a reaction mixture, wherein the molar ratio of (the one or more phenol compounds plus the one or more acids plus the one or more amine compounds) to the one or more cations initially included in the reaction mixture is greater than or equal to about 6, and heating the reaction mixture at a temperature and for a period of time sufficient to produce semiconductor nanocrystals having a predetermined composition. Methods for forming a buffer layer and/or an overcoating layer thereover are also disclosed. Semiconductor nanocrystals and compositions including semiconductor nanocrystals of the invention are also disclosed.
    Type: Application
    Filed: June 7, 2013
    Publication date: October 17, 2013
    Inventors: Justin W. KAMPLAIN, Zhengguo ZHU
  • Patent number: 8398768
    Abstract: The invention relates to methods of making articles of semiconducting material on a mold comprising semiconducting material and semiconducting material articles formed thereby, such as articles of semiconducting material that may be useful in making photovoltaic cells.
    Type: Grant
    Filed: May 14, 2009
    Date of Patent: March 19, 2013
    Assignee: Corning Incorporated
    Inventors: Glen Bennett Cook, Christopher Scott Thomas, Natesan Venkataraman
  • Publication number: 20130020539
    Abstract: A novel multiband absorption based solar cell is disclosed by using the europium chalcogenides (EuX, X?O, S, Se, Te) and related magnetic semiconductor materials, in which an intermediate band is formed by the localized Eu 4f electrons between p-states of chalcogen ions and Eu s-d states. The energy gaps among the multibands can be in the spectral range of the sunlight, thus they can serve as better sunlight absorbers in solar cells than the conventional single band-gap semiconductors such as Si and GaAs. With these multiband semiconductors, the bottleneck in current power conversion efficiency can be potentially overcome in single junction photovoltaics.
    Type: Application
    Filed: July 21, 2011
    Publication date: January 24, 2013
    Inventor: Zhixun Ma
  • Patent number: 8303735
    Abstract: A conventional low-temperature solder containing Pb or Cd had problems with respect to environmental pollution. A conventional low-temperature lead-free solder had a liquidus temperature which was too high for low heat resistance parts having a heat resistance temperature of 130° C., or it was brittle or had low mechanical strength. A lead-free low-temperature solder according to the present invention comprises 48-52.5 mass % of In and a balance of Bi, and most of the structure is constituted by a BiIn2 intermetallic compound which is not brittle. Zn or La can be added in order to further improve solderability, and a small amount of P can be added to prevent corrosion at high temperatures and high humidities.
    Type: Grant
    Filed: August 18, 2006
    Date of Patent: November 6, 2012
    Assignee: Senju Metal Industry Co., Ltd.
    Inventor: Minoru Ueshima
  • Patent number: 8293370
    Abstract: Disclosed is a solder material which enables to realize a lower mounting temperature when an electronic component is mounted. Also disclosed are a solder paste and a conductive adhesive. Specifically disclosed is a solder material having a basic composition composed of Sn, Bi and In. This solder material may further contain at least one metal selected from the group consisting of Cu, Ge and Ni. A solder paste which enables to realize a low-temperature mounting can be obtained by blending a flux component into the solder material. A conductive adhesive which enables to realize a low-temperature mounting can be obtained by blending a resin component into the solder material.
    Type: Grant
    Filed: August 3, 2007
    Date of Patent: October 23, 2012
    Assignee: Panasonic Corporation
    Inventors: Atsushi Yamaguchi, Kazuhiro Nishikawa, Hidenori Miyakawa
  • Publication number: 20120222893
    Abstract: A solder composition includes about 4% to about 25% by weight tin, about 0.1% to about 8% by weight antimony, about 0.03% to about 4% by weight copper, about 0.03% to about 4% by weight nickel, about 66% to about 90% by weight indium, and about 0.5% to about 9% by weight silver. The composition can further include about 0.2% to about 6% by weight zinc, and, independently, about 0.01% to about 0.3% by weight germanium. The composition can be used to solder an electrical connector to an electrical contact surface on a glass component.
    Type: Application
    Filed: February 1, 2012
    Publication date: September 6, 2012
    Applicant: Antaya Technologies Corporation
    Inventors: Jennie S. Hwang, John Pereira, Alexandra Mary Mackin, Joseph C. Gonsalves
  • Publication number: 20120199393
    Abstract: A lead-free solder which can reduce the occurrence of voids and a connecting member which uses the solder and has excellent adhesion, bonding strength, and workability are provided. The lead-free solder alloy has a composition consisting essentially of Sn: 0.1-3% and/or Bi: 0.1-2%, and a remainder of In and unavoidable impurities and has the effect of suppressing the occurrence of voids at the time of soldering. The connecting member is prepared by melting the lead-free solder alloy, immersing a metal substrate in the melt, and applying ultrasonic vibrations to the molten lead-free solder alloy and the metal substrate to form a lead-free solder alloy layer on the surface of the metal substrate. A heat sink and a package are soldered to each other through this connecting member by reflow heating in the presence of flux.
    Type: Application
    Filed: September 2, 2010
    Publication date: August 9, 2012
    Inventors: Shunsaku Yoshikawa, Yoshie Yamanaka, Tsukasa Ohnishi, Seiko Ishibashi, Koji Watanabe, Hiroki Ishikawa, Yutaka Chiba
  • Publication number: 20120107228
    Abstract: There is provided a hydrogen gas generating member which safely facilitates the hydrogen gas generation reaction by bringing an Al alloy which is subjected to rolling treatment or powdering treatment into contact with water. A hydrogen gas generating member 20 includes a texture in which Al is finely dispersed in a metal matrix, where hydrogen gas is generated by bringing the hydrogen gas generating member into contact with water. A fixing member 14 for mounting the hydrogen gas generating member 20 is provided in a hydrogen generating apparatus 10 and is brought into contact with a water 15 that is stored inside. The hydrogen gas generated from the surface is supplied outside through a hydrogen gas collecting, pipe 12 and stored in a storage tank (not shown).
    Type: Application
    Filed: August 11, 2008
    Publication date: May 3, 2012
    Applicant: Japan Science and Technology Agency
    Inventors: Kiyohito Ishida, Ryosuke Kainuma, Ikuo Ohnuma, Toshihiro Omori, Yoshikazu Takaku, Takehito Hagisawa
  • Publication number: 20120055873
    Abstract: The present invention relates to methods of making and using and compositions of metal nanoparticles formed by green chemistry synthetic techniques. For example, the present invention relates to metal nanoparticles formed with solutions of plant extracts and use of these metal nanoparticles in removing contaminants from soil and groundwater and other contaminated sites. In some embodiments, the invention comprises methods of making and using compositions of metal nanoparticles formed using green chemistry techniques.
    Type: Application
    Filed: November 8, 2011
    Publication date: March 8, 2012
    Applicants: The U.S.A as represented by the Administrator of the U.S. Environmental Protection Agency, VeruTEK, Inc.
    Inventors: George E. Hoag, John B. Collins, Rajendar S. Varma, Mallikarjuna N. Nadagouda
  • Publication number: 20110291049
    Abstract: The present invention provides high quality monodisperse or substantially monodisperse InAs nanocrystals in the as-prepared state. In some embodiments, the as-prepared substantially monodisperse InAs nanocrystals demonstrate a photoluminescence of between about 700 nm and 1400 nm.
    Type: Application
    Filed: June 10, 2009
    Publication date: December 1, 2011
    Applicant: Board of Trustees of the University of Arkansas
    Inventors: Xiagang Peng, Renguo Xie
  • Publication number: 20110284372
    Abstract: According to one embodiment of the invention, a Cu—Ga alloy material has an average composition consisting of not less than 32% and not more than 53% by mass of gallium (Ga) as well as the balance consisting of copper (Cu) and an inevitable impurity. In the Cu—Ga alloy material, a region containing less than 47% by mass of copper accounts for 2% or less by volume of the whole Cu—Ga alloy material.
    Type: Application
    Filed: May 5, 2011
    Publication date: November 24, 2011
    Applicant: HITACHI CABLE, LTD.
    Inventors: Yuichi HIRAMOTO, Tatsuya TONOGI, Noriyuki TATSUMI
  • Patent number: 8043409
    Abstract: A production method of an indium-based nanowire product comprising indium-based nanowires according to the present invention is characterized in that the method comprises the step of: disproportionation-reacting particles including indium subhalide as main components in a nonaqueous solvent, to obtain nanowires including metal indium as main components. The electroconductive oxide nanowire product comprising electroconductive oxide nanowires of the present invention can be obtained by: subjecting, the indium nanowires additionally doped with doping metals, to a heating oxidation treatment; or doping oxides of doping metals into indium oxide nanowires obtained from the indium-based nanowires.
    Type: Grant
    Filed: November 10, 2006
    Date of Patent: October 25, 2011
    Assignee: Sumitomo Metal Mining Co., Ltd.
    Inventor: Masaya Yukinobu
  • Patent number: 7938879
    Abstract: A fuel for splitting water into hydrogen and an oxide component comprises a substantially solid pellet formed from a solid-like mixture of a solid-state source material capable of oxidizing in water to form hydrogen and a passivation surface layer of the oxide component, and a passivation preventing agent that is substantially inert to water in an effective amount to prevent passivation of the solid-state material during oxidation. The pellets may be introduced into water or other suitable oxidizer in a controlled rate to control the rate of reaction of the source material with the oxidizer, and thereby control the rate of formation of hydrogen. Methods are described for producing the solid-like mixture in varying weight percent of source material to passivation preventing agent.
    Type: Grant
    Filed: May 11, 2007
    Date of Patent: May 10, 2011
    Assignee: Purdue Research Foundation
    Inventors: Jerry M. Woodall, Eric S. Harmon, Kurt C. Koehler, Jeffrey T. Ziebarth, Charles R. Allen, Yuan Zheng, Jong-Hyeok Jeon, George H. Goble, David B. Salzman
  • Patent number: 7927516
    Abstract: A method for synthesis of high quality colloidal nanoparticles using comprises a high heating rate process. Irradiation of single mode, high power, microwave is a particularly well suited technique to realize high quality semiconductor nanoparticles. The use of microwave radiation effectively automates the synthesis, and more importantly, permits the use of a continuous flow microwave reactor for commercial preparation of the high quality colloidal nanoparticles.
    Type: Grant
    Filed: September 20, 2005
    Date of Patent: April 19, 2011
    Assignee: The Regents of the University of California
    Inventors: Geoffrey F. Strouse, Jeffrey A. Gerbec, Donny Magana
  • Publication number: 20110070122
    Abstract: An alloy composition comprises 73.0 to 74.5 wt % of Ag and 25.5-27.0 wt % of Sn; 30.0-67.5 wt % of Ag and 32.5-70.0 wt % of In; or 29.0-60.0 wt % of Ag, 19.0-35.0 wt % of Sn and 20.0-35.2 wt % of In, wherein the particle diameter of Ag is between 10 nm to 200 ?m. The alloy composition in the present invention has characters of low melting point, low hardness and high ductility. On the other hand, after a heat treatment, the alloy composition is tended to be high in melting point, hardness, strength, stability and conductivity.
    Type: Application
    Filed: August 25, 2010
    Publication date: March 24, 2011
    Inventor: Lung-Chuan Tsao
  • Publication number: 20110038809
    Abstract: The present invention provides methods for treating or preventing diseases and disorders caused by iron-dependent pathogenic microorganisms, such as bacteria, fungi, and parasites, by applying a gallium compound to an affected area. In particular, the present invention provides methods for treating or preventing dental caries, vaginal infections, skin infections, and so forth. Gallium compounds can be formulated as toothpaste, mouthwash, cream, ointment, gel, solution, eye drops, suppository, and the like. Furthermore, the invention provides methods for controlling microbial growth on environmental surfaces, including those of toothbrush, denture, dental retainer, contact lens, catheter, food stuff, and so forth. In addition, the present invention provides animal feeds which contain gallium compounds that promote the animal growth and prevent the animals from infections as well as protect consumers from post processing infections.
    Type: Application
    Filed: October 31, 2006
    Publication date: February 17, 2011
    Inventors: Daniel P. Perl, Sharon Moalem
  • Publication number: 20100307914
    Abstract: A Cu—Ga alloy includes a plurality of phases, and not less than 40 wt % and not more than 60 wt % of gallium (Ga) and a balance consisting of copper and an inevitable impurity. The plurality of phases include a segregation phase including not less than 80 wt % of gallium (Ga), and a rate of a volume of the segregation phase to a total volume of the Cu—Ga alloy is not more than 1%. The plurality of phases include particles including not less than 40 wt % and not more than 60 wt % of gallium (Ga), the particles include a diameter of not less than 0.1 ?m and not more than 30 ?m, and a rate of a volume of the particles to the total volume of the Cu—Ga alloy is not less than 90%.
    Type: Application
    Filed: May 11, 2010
    Publication date: December 9, 2010
    Inventors: Yuichi HIRAMOTO, Tatsuya Tonogi
  • Publication number: 20100290946
    Abstract: The invention relates to methods of making articles of semiconducting material on a mold comprising semiconducting material and semiconducting material articles formed thereby, such as articles of semiconducting material that may be useful in making photovoltaic cells.
    Type: Application
    Filed: May 14, 2009
    Publication date: November 18, 2010
    Inventors: Glen Bennett Cook, Christopher Scott Thomas, Natesan Venkataraman
  • Patent number: 7806994
    Abstract: An active solder alloy, an electronic device package including the active solder alloy bonding an electronic device to a substrate, and a method of forming high-strength joints by soldering using the solder alloy. The alloy contains up to about 10% by weight of an element or a mixture of elements selected from the group consisting of titanium, zirconium, hafnium, vanadium, niobium, or tantalum; between about 0.1 and 5% by weight of an element or a mixture of elements selected from the group of the lanthanides (rare earths); between about 0.01 and 1% by weight of gallium up to about 10% by weight of silver; up to about 2% by weight of magnesium; and a remainder consisting of tin, bismuth, indium, cadmium, or a mixture of two or more of these elements. The alloy enables low-temperature (less than about 180° C.) soldering within relatively narrow melting ranges (less than about 10° C.).
    Type: Grant
    Filed: May 4, 2005
    Date of Patent: October 5, 2010
    Assignee: S-Bond Technologies, LLC
    Inventors: Ronald W. Smith, Randall Redd
  • Publication number: 20100221142
    Abstract: A melt of a material is cooled and a sheet of the material is formed in the melt. This sheet is transported, cut into at least one segment, and cooled in a cooling chamber. The material may be Si, Si and Ge, Ga, or GaN. The cooling is configured to prevent stress or strain to the segment. In one instance, the cooling chamber has gas cooling.
    Type: Application
    Filed: October 16, 2009
    Publication date: September 2, 2010
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Peter L. KELLERMAN, Frederick Carlson, Frank Sinclair
  • Publication number: 20100167077
    Abstract: This invention is intended to provide an innovative process to produce pure metallic indium with the use of sulphured concentrates of zinc and lead as sources of the metal. The process begins with the zinc oxide produced by Waelz process from the neutral leaching residues of the zinc oxide calcinate. But the overflow (or supernatant) of the mild leaching of neutral underflow (or residue) of neutral leaching of zinc calcinate also contains indium in lower proportion and may or may not be part of the global process of indium recovery.
    Type: Application
    Filed: May 21, 2008
    Publication date: July 1, 2010
    Applicant: VOTORANTIM METAIS ZINCO S.A.
    Inventor: Adelson Dias de Souza
  • Publication number: 20100140439
    Abstract: A mechanical structure is provided with a crystalline superelastic alloy that is characterized by an average grain size and that is characterized by a martensitic phase transformation resulting from a mechanical stress input greater than a characteristic first critical stress. A configuration of the superelastic alloy is provided with a geometric structural feature of the alloy that has an extent that is no greater than about 200 micrometers and that is no larger than the average grain size of the alloy. This geometric feature is configured to accept a mechanical stress input.
    Type: Application
    Filed: July 8, 2009
    Publication date: June 10, 2010
    Applicant: Massachusetts Institute of Technology
    Inventors: Christopher A. Schuh, Jose M. San Juan, Ying Chen
  • Publication number: 20100068548
    Abstract: A photo-absorbing layer for use in an electronic device; the layer including metal alloy nanoparticles copper, indium and/or gallium made preferably from a vapor condensation process or other suitable process, the layer also including elemental selenium and/or sulfur heated at temperatures sufficient to permit reaction between the nanoparticles and the selenium and/or sulfur to form a substantially fused layer. The reaction may result in the formation of a chalcopyrite material. The layer has been shown to be an efficient solar energy absorber for use in photovoltaic cells.
    Type: Application
    Filed: November 24, 2009
    Publication date: March 18, 2010
    Applicant: QUANTUMSPHERE, INC.
    Inventors: R. Douglas Carpenter, Kevin D. Maloney
  • Publication number: 20100015004
    Abstract: A conventional low-temperature solder containing Pb or Cd had problems with respect to environmental pollution. A conventional low-temperature lead-free solder had a liquidus temperature which was too high for low heat resistance parts having a heat resistance temperature of 130° C., or it was brittle or had low mechanical strength. A lead-free low-temperature solder according to the present invention comprises 48-52.5 mass % of In and a balance of Bi, and most of the structure is constituted by a BiIn2 intermetallic compound which is not brittle. Zn or La can be added in order to further improve solderability, and a small amount of P can be added to prevent corrosion at high temperatures and high humidities.
    Type: Application
    Filed: August 18, 2006
    Publication date: January 21, 2010
    Inventor: Minoru Ueshima
  • Patent number: 7625523
    Abstract: There are provided a metal material for electrode formation, which can form an electrode provided in an organic function element without adopting vapor deposition, can easily realize an increase in size, can reduce production cost, and does not cause any disconnection of the electrode upon exposure to flexure and, thus, is highly reliable, and, at the same time, has a high level of electron injection function, and an organic function element using the metal material. The metal material is a Ga(gallium)-base alloy which is in a paste state at a temperature of the melting point of the Ga-base alloy or above, the Ga-base alloy comprising at least a Ga-base liquid metal in a liquid state at room temperature and an alkali metal or an alkaline earth metal and having an electron injection function.
    Type: Grant
    Filed: October 19, 2005
    Date of Patent: December 1, 2009
    Assignee: Dai Nippon Printing Co., Ltd.
    Inventor: Nobuyuki Ito
  • Patent number: 7617964
    Abstract: A low temperature solder including indium in the range of 62-65 weight percent and tin in the range of 31-33 weight percent uses the heat generated during thermal treatment of one or more glass sheets to melt the solder. In one non-limiting embodiment, a lead providing external access to an electrical conductive arrangement, e.g. a conductive member between and connected to spaced bus bars between laminated sheets has an end portion of a connector, e.g. a lead soldered to each of the bus bars during thermal processing of the sheets, e.g. during the lamination of the sheets during a windshield manufacturing process. In another nonlimiting embodiment, the connector is soldered to the electrically conductive arrangement during the annealing of glass blanks following the heating and shaping of the glass blanks.
    Type: Grant
    Filed: December 14, 2006
    Date of Patent: November 17, 2009
    Assignee: PPG Industries Ohio, Inc.
    Inventors: John A. Winter, Charles S. Voeltzel, Cheryl E. Belli, James P. Thiel
  • Patent number: 7578966
    Abstract: A solder composition includes a reflow-wetting element that is an intermetallic both pre-reflow and post-reflow. The intermetallic releases the reflow-wetting element upon heating. The solder composition includes the intermetallic first phase in a bulk-solder second phase. A method of assembling a microelectronic package includes the intermetallic in a solder. A computing system also includes the intermetallic first phase in the bulk-solder second phase.
    Type: Grant
    Filed: June 30, 2005
    Date of Patent: August 25, 2009
    Assignee: Intel Corporation
    Inventor: Daewoong Suh
  • Publication number: 20090196789
    Abstract: To provide a solder alloy, a solder ball and an electronic member having a solder bump, used for connection with a mother board or the like, having a melting temperature of less than 250° C. for the solder alloy, achieving high drop impact resistance required in mobile devices or the like. A solder alloy is used which consists of not less than 0.1 mass ppm of boron and not greater than 200 mass ppm of boron and a remainder comprising substantially not less than 40% by mass of Sn, in which its melting temperature is less than 250° C.
    Type: Application
    Filed: December 30, 2008
    Publication date: August 6, 2009
    Applicants: NIPPON STEEL MATERIALS CO., LTD., NIPPON MICROMETAL CORPORATION
    Inventors: Takayuki Kobayashi, Tsutomu Sasaki, Masamoto Tanaka, Katsuichi Kimura
  • Publication number: 20090148338
    Abstract: Problems: A conventional alloy for a fusible plug contained harmful elements such as Cd and Pb, and there was a concern of pollution by these harmful elements. The present invention provides a fusible plug which does not contain the harmful elements Cd and Pb, with which the alloy is not forced out of the fusible plug even when used for long periods as a safety device for refrigeration equipment, and which has a strong mechanical strength such as creep strength. Means for Solving the Problem: A fusible plug employs an alloy for fusible plugs which comprises 5-8 mass % of Sn, 31-34 mass % of Bi, 0.2-4 mass % of Sb, and a remainder of In and which melts at approximately 66-70° C. A total of at most 2.0 mass % of at least one element selected from strengthening elements consisting of 0.1-1.0 mass % of Cu, 0.1-1.0 mass % of Ge, 0.1-0.7 mass % of Ag, 0.1-0.6 mass % of Au, 0.2-0.6 mass % of Zn, 0.02-0.1 mass % of Ni, and 0.01-0.1 mass % of a lanthanoid may be added.
    Type: Application
    Filed: April 14, 2005
    Publication date: June 11, 2009
    Applicant: SENJU METAL INDUSTRY CO., LTD.
    Inventors: Rikiya Kato, Tetsuro Kikuchi, Mutsumi Deguchi
  • Publication number: 20090081412
    Abstract: A method of forming a thin film comprising the steps of: applying an inorganic salt solution for a thin film on a substrate to obtain a coated inorganic salt solution film; and subjecting the coated inorganic salt solution film to a plasma treatment under atmospheric pressure, wherein the plasma treatment is conducted by supplying a gas under atmospheric pressure or nearly atmospheric pressure between a pair of counter electrodes, and then generating a high frequency electric field between the electrodes so as to excite the gas followed by subjecting the coated inorganic salt solution film to the excited gas.
    Type: Application
    Filed: May 12, 2006
    Publication date: March 26, 2009
    Applicant: KONICA MINOLTA HOLDINGS, INC.
    Inventors: Kazuhiro Fukuda, Koji Ozaki
  • Publication number: 20090014746
    Abstract: Lead-free solder compositions for bonding and sealing flat panel displays, CCD's, solar cells, light emitting diodes, and other optoelectronic devices are disclosed. The solders are based on alloys of Sn, Au, Ag, and Cu and one or more rare earth metals chosen from the following, Y, La, Ce, Pr, Sc, Sm, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu. Optionally, the compositions may comprise In, Bi, or Zn. The solder compositions exhibit superior bonding capability in joining dissimilar surfaces such as those present in both the flat panel display and light emitting devices. Additionally the solders provide a strong barrier to the diffusion of both water and oxygen into these devices thus promoting longer device life times.
    Type: Application
    Filed: July 11, 2007
    Publication date: January 15, 2009
    Inventors: Ainissa Gweneth Ramirez, Roger Sinta