Abstract: This invention relates to electrical devices in which the electrical contact areas are plated with a nickel/indium alloy comprising 0.1-9 percent indium, balance nickel. The nickel/indium alloy layer may be coated with a precious metal such as gold.

Abstract: A method for transferring current which uses a fusible alloy comprising f about 25.0 to about 48.0 weight percent bismuth, from about 0.8 to about 11.5 weight percent cadmium, from about 18.0 to about 53.5 weight percent indium, from 0.0 to about 24.0 weight percent lead, and from about 9.0 to about 17.0 weight percent tin.

Abstract: A GaAs single crystal containing at least one impurity selected from the group consisting of B, Si, S, Te and In in a concentration of at least 10.sup.15 /cm.sup.3, fluctuation of which is not larger than 20% in a plane perpendicular to a growth direction of the single crystal, which is prepared by pulling up the GaAs single crystal from a GaAs raw material melt contained in a crucible which is encapsulated with a liquid encapsulating layer in an inactive gas atmosphere at a high pressure with applying a magnetic field to the raw material melt.

Abstract: A method for depositing GaAs on a substrate is disclosed, involving applying a thin liquid film of a gallium-arsenic complex solution to the substrate and evaporating arsenide complex. The gallium-arsenic complex is selected from the group of complexes having the formula X.sub.3 GaAsR.sub.3 where X is chlorine, bromine, iodine, phenyl, methyl or trifluoromethyl and R is by hydrogen, phenyl, benzyl, methyl or trifluoromethyl.The thin solid film is irradiated with ultraviolet light at a sufficient wavelength and of a sufficient intensity to photochemically convert the gallium-arsenic complex to GaAs.

Abstract: More than two isoelectronic impurities are doped in a host crystal of compound semiconductors of groups III-V.An impurity atom forms a covalent bond with a host atom. Although the real bond length "A" between an impurity and a host atom in the crystal cannot be measured, it can be surmised from the bond length "a" between two atoms in a pure two-component crystal consisting of the elements same with the impurity atom and the host atom. The bond length between host atoms in the crystal is called standard bond length "a.sub.0 ". Definite and measurable bond length "a" replaces the real unknown bond length "A". The impurity whose replaced bond length "a.sub.1 " is shorter than "a.sub.0 " is called an under-impurity. The impurity whose replaced bond length "a.sub.2 " is longer than "a.sub.0 " is called an over-impurity.In this invention at least one under-impurity and at least one over-impurity are doped in the host single crystal. From the concentrations "x.sub.1 " and "x.sub.

Abstract: An acoustical transducer is provided with an acoustically absorbant backing material having an acoustical impedance precisely matching the impedance of the piezoelectric element in the transducer. The backing material is a multiphase mixture of selected materials, such as a low melting point alloy (InPb) and one or more powders having high impedance characteristics (tungsten and copper). The slope of the curve impedance versus volume fraction of the backing components is low, thus allowing the impedance of the material to be precisely controlled. The backing material is preferably electrically conductive and is fuzed to one surface of the piezoelectric element to further improve the output characteristics of the transducer.

Abstract: An indium-antimony complex crystalline semiconductor consisting essentially of crystals of an indium-antimony compound and crystals of indium alone is disclosed. The atomic ratio of the total indium content to the antimony content in the semiconductor is in the range of from 1.1/1 to 1.7/1. A process for producing such semiconductor is also disclosed. In the process, the vapors of indium and antimony are deposited on a substrate in such a manner that the arrival rate ratio of indium to antimony is controlled to be within the range of from 1.1/1 to 1.7/1.

Abstract: A heat resistant brazing alloy of a major amount of gold, a lesser amount of indium and a minor amount of tin. The alloy is particularly suited for use in bonding electrical components to chip carrying substrates which are to be reworked.

Abstract: An indium-antimony complex crystalline semiconductor consisting essentially of crystals of an indium-antimony compound and crystals of indium alone is disclosed. The atomic ratio of the total indium content to the antimony content in the semiconductor is in the range of from 1.1/1 to 1.7/1. A process for producing such semiconductor is also disclosed. In the process, the vapors of indium and antimony are deposited on a substrate in such a manner that the arrival rate ratio of indium to antimony is controlled to be within the range of from 1.1/1 to 1.7/1.

Abstract: A method of producing III-V materials by reducing a complex salt in a hydrogen atmosphere is shown. For example, complex salts reduce to InP or GaAs. The salts are conveniently prepared by coprecipitation from a salt solution or by other methods. The stoichiometry can be modified by applying an overpressure of the more volatile element or elements during reduction.

Abstract: A novel conductive paste and a method of making the same in which metallic gallium is combined with a metal or alloy which forms a eutectic with gallium in an amount in excess of its limit of solubility in gallium at a specific temperature. This melt is then treated with a metal powder of a second metal or alloy which alloys with gallium to produce a higher melting alloy, the second metal powder being coated on its surface with the eutectic-forming metal.