Abstract: The invention provides a low alpha dose barium sulfate particle having a silica content of 0.6% by weight or less and an alpha dose of 0.07 cph/cm2 or less.

Abstract: The present invention relates to a metal paste including: a first metal powder including nickel (Ni); a second metal powder including at least one selected from the group consisting of tin (Sn), zinc (Zn), bismuth (Bi), and indium (In); and a dispersing agent, and to a thermoelectric module which adopts a bonding technique using the metal paste.

Abstract: Disclosed is tin characterized in that a sample of the tin after melting and casting has an ? dose of less than 0.0005 cph/cm2. Since recent semiconductor devices are highly densified and of high capacity, there is an increasing risk of soft errors caused by the influence of ? rays emitted from materials in the vicinity of semiconductor chips. In particular, there are strong demands for high purification of solder materials and tin for use in the vicinity of semiconductor devices, and demands for materials with lower ? rays. Accordingly, an object of the present invention is to clarify the phenomenon of the generation of ? rays in tin and tin alloys, and to obtain high-purity tin, in which the ? dose has been reduced, suitable for the required materials, as well as a method for producing the same.

Abstract: To provide audio solder alloy which is senary solder alloy (Sn.Ag.Cu.In.Ni.Pb) and has their appropriate contained amounts to obtain excellent sound quality and high auditory assessment, as the joining solder for connecting various kinds of electronics parts used for electronic circuit such as a filter circuit NW for audio system. A preferably example of the contained amounts is as follows: Ag of 1.0 through 1.01% by mass, Cu of 0.71 through 0.72% by mass, In of 0.003 through 0.0037% by mass, Ni of 0.016 through 0.017% by mass, Pb of 0.0025 through 0.0035% by mass and the remainder of Sn.

Abstract: A glazing is disclosed comprising at least one ply of glass having an electrically conductive component on at least one surface, and an electrical connector electrically connected to the electrically conductive component through a soldered joint, the solder of the joint having a composition comprising 0.5 wt % or more indium, wherein the electrical connector comprises a nickel plated contact for contacting the solder. Also disclosed are solders having a composition comprising 14 to 75 wt % In, 14 to 75 wt % Sn, to 5 wt % Ag, to 5 wt % Ni, and less than 0.1 wt % Pb. Also disclosed is use of a solder having a composition comprising 0.5 wt % or more indium to solder a nickel plated electrical connector to an electrically conductive component on the surface of a ply of glass. The aspects of the invention improve the durability of electrical connections on glazing.

Abstract: A device and a method for realizing reliable electrical contacts at low temperature and low pressure between conducting materials on, for example, different substrates are disclosed. In one aspect, a rough and brittle intermetallic layer is formed on a conducting material on a first substrate. A soft solder material layer on the other substrate is used for contacting the brittle and rough intermetallic layer that will break. As the solder material is relatively soft, contact between the broken intermetallic layer and the solder material can be realized over a large portion of the surface area. At that stage, a second intermetallic layer is formed between the solder material and the first intermetallic layer realizing electrical contact.

Abstract: Disclosed is tin characterized in that a sample of the tin after melting and casting has an ? dose of less than 0.0005 cph/cm2. Since recent semiconductor devices are highly densified and of high capacity, there is an increasing risk of soft errors caused by the influence of ? rays emitted from materials in the vicinity of semiconductor chips. In particular, there are strong demands for high purification of solder materials and tin for use in the vicinity of semiconductor devices, and demands for materials with lower ? rays. Accordingly, an object of the present invention is to clarify the phenomenon of the generation of ? rays in tin and tin alloys, and to obtain high-purity tin, in which the ? dose has been reduced, suitable for the required materials, as well as a method for producing the same.

Abstract: To provide a solder alloy, a solder ball and an electronic member having a solder bump, used for connection with a mother board or the like, having a melting temperature of less than 250° C. for the solder alloy, achieving high drop impact resistance required in mobile devices or the like. A solder alloy is used which consists of not less than 0.1 mass ppm of boron and not greater than 200 mass ppm of boron and a remainder comprising substantially not less than 40% by mass of Sn, in which its melting temperature is less than 250° C.

Abstract: Provided is high purity tin or tin alloy wherein the respective contents of U and Th are 5 ppb or less, the respective contents of Pb and Bi are 1 ppm or less, and the purity is 5N or higher (provided that this excludes the gas components of O, C, N, H, S and P). This high purity tin or tin alloy is characterized in that the ? ray count of high purity tin having a cast structure is 0.001 cph/cm2 or less. Since recent semiconductor devices are densified and are of large capacity, there is considerable risk of a soft error occurring due to the influence of the ? ray from materials in the vicinity of the semiconductor chip. In particular, there are strong demands for purifying the soldering material or tin to be used in the vicinity of semiconductor devices, as well as for materials with fewer ? rays. Thus, the present invention aims to provide high purity tin or tin alloy and the manufacturing method of such high purity tin by reducing the ? dose of tin so as to be adaptable as the foregoing material.

Abstract: A method of joining workpieces using a solder alloy. The alloy contains either at least 1% or a maximum of about 10% by weight of an element or a mixture of elements selected from the group consisting of titanium, zirconium, hafnium, vanadium, niobium, and tantalum; either at least 0.01% or 0.01–10% by weight of an element or a mixture of elements selected from the group of the lanthanides (rare earths); either at least 0.5% or 0.5–10% by weight of an element or a mixture of elements selected from the group consisting of silver, copper, and indium; optionally either at least 0.01% or 0.01–1% by weight of gallium; and a remainder consisting of tin, lead, or of a mixture of tin and lead.

Abstract: The present invention relates to new compositions of matter, particularly metals and alloys, and methods of making such compositions. The new compositions of matter exhibit long-range ordering and unique electronic character.

Abstract: A solder which can form a soldered joint of good bonding strength on a Ni layer containing a small amount of P formed from electroless Ni plating with a P-containing plating solution comprises 60-64 mass % of Sn, 0.002-0.01 mass % of P, 0.04-0.3 mass % of Cu, and a remainder of Pb. The solder is particularly suitable for forming a solder bump on a Cu electrode which has been coated with Ni by electroless plating.

Abstract: A lead-free solder, which contains from 1.0 to 3.5% of Ag, from 0.1 to 0.7% of Cu, and from 0.1 to 2.0% of In, the balance consisting of unavoidable impurities and Sn, is appropriate for ball-grid array (BGA). The solute Cu suppresses growth of intermetallic compound formed at the interface between the bulk of solder and a Ni or Cu conductor.

Abstract: A free-space optical communication apparatus includes a storage unit which stores angle-setting information for the mirror for communicating with each of the plurality of other apparatuses, a mirror driving unit which drives the mirror to an angle corresponding to the stored angle-setting information, an optical detecting unit which, on one occasion for communicating with a specified communication apparatus among the plurality of other apparatuses, detects the incident state of an optical beam sent from the specified apparatus, and a control unit which, based on the detected incident state of the optical beam, determines angle-correcting information for correcting the stored angle-setting information for the specified apparatus, and which, on the next occasion for communicating with the specified apparatus, uses the mirror driving unit to drive the mirror to an angle corresponding to the angle-setting information corrected by the angle-correcting information.

Abstract: Each of junctions formed between a semiconductor device and a substrate comprises metal balls of Cu, or other materials and compounds of Sn and the metal balls, and the metal balls are bonded together by the compounds.

Abstract: A method of solder-coating a metallic pad provided on a substrate, whereby at least the surface of the pad is provided with a deposit of solder paste, which paste comprises a suspension of metallic solder particles which, when molten, have a surface energy lower than the critical surface energy of the metallic pad but higher than the critical surface energy of the substrate surface outside the borders of the pad, whereby application of heat causes metallic solder particles within the paste lying upon the pad to melt and fuse together into an essentially continuous metallic solder layer, whereas the metallic solder particles within any paste lying upon the substrate surface outside the borders of the pad do not thus fuse together into a layer but are instead deposited as mutually-isolated solder beads, which beads can be subsequently removed from the substrate surface after completion of the heating process.

Abstract: Variable melting point solders and brazes having compositions comprising a metal or metal alloy powder having a low melting point with a metal powder having a higher melting point. Upon heating, in-situ alloying occurs between the low and high melting point powders such that solidification occurs at the solder or braze temperature thus creating a new, higher solidus (or melting) temperature with little or no intermetallic formation. A solder comprising Sn powder mixed with a Sn—Bi eutectic powder having a composition of 63 wt % Sn, 57 wt % Bi such that the bulk composition of the mixture is 3 wt % BS has an initial melting point of 140° C. and a re-melt temperature of 220° C. after heating due to in-situ alloying. A composition of Pb powder mixed with a Pb—Sn eutectic powder having a composition of 62 wt % Sn:58 wt % Pb such that the bulk composition of the mixture is 15 wt % Sn has an initial melting point of 183° C. and a re-melt temperature of 250° C.

Abstract: Solder and a method of manufacturing the solder are disclosed wherein powdered free silver is added to a solder alloy with a particle size sufficient to preserve silver metallization during use and with a concentration sufficient to maximize the effectiveness and avoid adverse effects on solder reflow characteristics. Preferably, the particle size is in a range of approximately 5 &mgr;m to 20 &mgr;m and the powdered free silver is added in a concentration of approximately 5% to 10%.

Abstract: A solder composition that bonds well to oxides and other surfaces to which solder bonding is conventionally difficult is provided. The solder is particularly useful for reliable bonding and packaging of optical components that often have oxide surfaces. The solder composition exhibits a microstructure containing a solder matrix in which is distributed fine, micron-scale islands of rare-earth-containing intermetallic particles. The existence of the islands makes the rare earth elements better available for bonding, and reduce the extent to which the rare earths are oxidized. Advantageously, the solder contains Au and/or Ag, in which the rare earth elements tend to have some solid solubility. Due to this solubility, the Au and/or Ag tend to provide some additional protection of the rare earths against oxidation, and thereby also provide accelerated dissolution of the rare earth into the molten solder.

Abstract: Disclosed are a solder and a solder paste used for soldering an electronic part to a circuit board. This solder comprises 2.0 to 3.5 wt % of Ag, 5 to 18 wt % of Bi and Sn for the rest. Alternatively, it further contains at least one element selected from the group consisting of 0.1 to 1.5 wt % of In, 0.1 to 0.7 wt % of Cu and 0.1 to 10 wt % of Zn.

Abstract: The invention, which enables wider use to be made of soft-soldering techniques, concerns an alloy, in particular a solder alloy, a method of joining workpieces by soldering using the solder alloy and the use of the alloy for soldering. The alloy proposed is characterized in that it contains at least 1% by wt. of an element or a mixture of elements from sub-group IVa and/or Va in the periodic table, at least 0.01% by wt. of an element or a mixture of elements from the lanthanide series; optionally at least 0.5% of silver or copper or indium or a mixture silver and/or copper and/or indium; and optionally at least 0.01% by wt. of gallium, the remainder consisting of tin or lead or a mixture of tin and lead plus, as applicable, the usual impurities. The alloy proposed can be used as solder in oxygen-containing atmospheres such as air, can be used at relatively low temperatures and efficiently wets normally difficult to wet surfaces such as ceramic surfaces.

Abstract: A method by which a conventional circuit trace (14) is modified with a layer (16) of high-conductivity solder alloy to yield a high-current circuit trace (12) for high-current routing on a substrate (10). The method generally entails the use of a solder composition that contains a dispersion of metal particles (18) in a solder alloy (20). The metal particles (18) are selected on the basis of having a higher electrical conductivity than the solder alloy (20), and are present in sufficient amounts so that the electrical conductivity of the solder composition is significantly higher than that of the solder alloy (20). The solder composition is deposited on a conductor (14), and then reflowed to form a conductive layer (16) on the conductor (14). The metal particles (18) remain as a discrete dispersion within the conductive layer (16) in order to suitably promote the conductivity of the layer (16).

Abstract: A process for altering surface properties of a mass of metal alloy solder comprising a first metal and a second metal. The process comprises exposing the mass to energized ions to preferentially sputter atoms of the first metal to form a surface layer ratio of first metal to second metal atoms that is less than the bulk ratio. The solder may be located on the surface of a substrate, wherein the process may further comprise masking the substrate to shield all but a selected area from the ion beam. The sputtering gas may comprises a reactive gas such as oxygen and the substrate may be an organic substrate. The process may further comprise simultaneously exposing the organic substrate to energized ions of the reactive gas to roughen the organic substrate surface.

Abstract: An object of this invention is to provide a solder material capable of, when joining an electronic component to a substrate with the solder material, improving heat fatigue resistance thereof and reducing damage of Ni film interposed therebetween. A solution of this invention is to assemble an electronic part by soldering a semiconductor device with a substrate using solder balls made of a solder material containing from 0.01 to 4.99% by weight of Fe; from 0.01 to 4.99% by weight of Ni, total thereof being from 0.02 to 5.0% by weight; from 0.1 to 8.0% by weight of at least one of Ag and In; from 0 to 70% by weight of Pb, balance containing Sn and unavoidable impurity.

Abstract: Tin and zinc based shot for use as ammunition having a diameter of from 1.5 to 5.5 mm, containing, by weight, in addition to tin and the usual unavoidable contaminants, from 12 to 60% of zinc and from 0 to 5% of aluminum, but less than 0.1% of copper, less than 0.1% of iron, and less than 1% of lead.

Abstract: A method of electrically connecting a semiconductor package to a substrate by using bump contacts formed by heating the tip of an alloy wire and directly joined to aluminum alloy wiring lines, an alloy wire for such a purpose, and a semiconductor device constructed by electrically connecting a semiconductor package to a substrate by such a method. The alloy wire is produced by drawing an alloy material produced by quench solidifying an alloy containing Pb, Sn or In as a principal element, and an additive element or additive elements. The tip of the alloy wire is heated to form a ball to be joined to the aluminum alloy wiring line as a bump contact. The Brinell hardness number of the ball is H.sub.B 6 or higher.

Abstract: Pb-free solder alloys based on the Sn-In-Zn system (exemplarily 86:5:9 weight %) are disclosed. Compositions can have a melting temperature in the range 183.degree. C..+-.10.degree. C. and thus can be readily substituted for conventional 40 Pb-60 Sn solder. The novel compositions also can possess superior mechanical properties, compared to the 40/60 Pb-Sn composition, and readily wets copper. Bi and/or Sb may be added to the Sn-In-Zn base to reduce the tendency for the formation of lower temperature phases.

Abstract: This invention relates to a connection method for a semiconductor material enabling a formation of a bump electrode with a wire bonder, keeping always a cutting position of the wire at a specified position and improving a continuous workability and stability and to a connection material to be used in the connecting method, wherein any one of Pb, Sn, In is applied as a major element and the alloy having additive elements mixed with it is made as a fine wire under a rapid cooling and condensation process and further to a semiconductor device made by the above-mentioned connecting method.

Abstract: A solder paste is composed of a vehicle (or flux) system and a mixture of at least two solder powders. One component of this mixture is a eutectic or near-eutectic Sn/Pb alloy powder, while the other component comprises powders selected from at least one elemental metal powder or at least one solder alloy powder or at least one elemental metal powder and at least one solder alloy powder. Said other component is a powder or combination of powders each of which has a liquidus temperature which is lower by at least 5 degrees Centigrade (.degree.C.) than the solidus temperature of said eutectic or near-eutectic Sn/Pb alloy powder or a solidus temperature which is higher by at least 5.degree. C. than the liquidus temperature of said eutectic or near-eutectic Sn/Pb alloy powder. The eutectic or near-eutectic Sn/Pb powder makes up from 5 to 95 weight percent of the total powder mixture. Alternatively, not all powders which comprise the second component need to obey this rule so long as at least 30% by wt.

Abstract: The fatigue resistance of lead-tin eutectic solder is increased by doping the solder with about 0.1 to 0.8 weight % of a dopant selected from cadmium, indium antimony and mixtures thereof. The doped eutectic solder exhibits increased resistance to thermally or mechanically induced cyclic stress and strain. As a result, the fatigue resistance of the solder joint is increased. Combination of dopants, such as indium and cadmium, in combined amounts of less than 0.5 weight % are especially effective in increasing the fatigue resistance of the lead-tin eutectic solder.

Abstract: Heavy metal solders having exceptional ability to wet non-metals, especially glass, are produced by the incorporation of small amounts of the light reactive metals lithium, sodium, potassium, rubidium, cesium, calcium, or magnesium into the heavy metal solder compositions. These heavy metal solder compositions consist essentially of alloys contained within the heavy metal system Pb-Sn-In-Bi-Cd-Sb-Hg-Ga-Ag-Au or within subsystems thereof wherein each heavy metal element present in the system or subsystem can potentially constitute nearly the whole of the total depending upon the specific composition chosen. In cases where a low melting point is desired the resultant solder will in general have the formula:A.sub.a B.sub.bwherein A is at least three metals selected from the group consisting ofPb, Sn, In, Bi, Cd, Sb, Hg, Ga, Ag, and Au;and B is at least one metal selected from the group consisting ofLi, Na, K, Rb, Cs, and Ca, and Mg; andwhereinb ranges from about 0.0001 to about 0.1; anda ranges from about 0.

Abstract: An improved dispersion strengthened lead-tin alloy solder is provided in which there is dispersed in the solder up to about 5 vol. percent of small particles, of a metal sulfide or a nickel-tin intermetallic.

Abstract: Low melting temperature copper-containing solders are disclosed for soldering and rework on copper surfaces. The amount of copper required in the solder in order to inhibit dissolution of the copper surface to be soldered has been found to be dopant level, below the binary tin-copper eutectic point.

Abstract: Eutectic solder, including a combination of tin, lead and silver is doped by the addition of copper to substantially improve its effectiveness in soldering printed wiring cards which have been screen printed with conductors and mounting pads for components, with a low temperature, thick film cermet copper conductor. The addition of the copper substantially improves wetting and increases long term solder joint reliability.

Abstract: A solder is disclosed which consists essentially of from about 55 to about 65 percent by weight of tin, from about 2 to about 3.9 percent by weight of calcium with the remainder being lead. The calcium modified tin-lead solders of this invention are characterized by excellent soldering properties, especially uniform solidification on cooling, and by forming solder joints with a tensile strength of at least about 7000 PSI (49.21.times.10.sup.5 kg/sq m).

Abstract: A package of the flatpack type for microelectronic circuits comprises a metal base of material having good heat conductivity on which a metal frame is mounted by means of a hard brazing alloy. The frame has the function of supporting connections by means of insulating lead-in bushings of the glass bead type. The coefficient of expansion of the frame and of the base are matched so as to ensure that the base of the package does not exhibit any defect of surface planarity after cooling.

Abstract: A soft solder of Pb alloy for semiconductor devices that contains 1 to 65 wt % of Sn or In or both, the balance being Pb and incidental impurities which include less than 50 ppb of radioisotopes and the count of radioactive alpha-particles being not more than 0.5 CPH/cm.sup.2. The solder exhibits high adhesive strength and good wettability. The properties of this material may be further improved by addition of 1 to 10 wt % of Ag.