Tin Base Patents (Class 420/557)
  • Patent number: 10888960
    Abstract: Provided is a solder alloy that contains 0.01 mass % or more and 0.1 mass % or less of Fe, 0.005 mass % or more and less than 0.02 mass % of Co, 0.1 mass % or more and 4.5 mass % or less of Ag, 0.1 mass % or more and 0.8 mass % or less of Cu, and the balance being Sn.
    Type: Grant
    Filed: September 30, 2016
    Date of Patent: January 12, 2021
    Assignee: KOKI Company Limited
    Inventors: Kazuhiro Yukikata, Mitsuyasu Furusawa, Kimiaki Mori
  • Patent number: 9956649
    Abstract: A solder alloy substantially consists of tin, silver, indium, bismuth, and antimony. With respect to the total amount of the solder alloy, the content ratio of the silver is 2.8 mass % or more and 4 mass % or less; the content ratio of the indium is 6.2 mass % or more and 9.0 mass % or less; the content ratio of the bismuth is 0.7 mass % or more and 5.0 mass % or less; the content ratio of the antimony is 0.3 mass % or more and 5.0 mass % or less; and the content ratio of the tin is the remaining ratio and the value of A is 4.36 or less wherein A=0.87×[In content ratio (mass %)]?0.41×[Ag content ratio (mass %)]?0.82×[Sb content ratio (mass %)].
    Type: Grant
    Filed: August 28, 2014
    Date of Patent: May 1, 2018
    Assignee: HARIMA CHEMICALS, INCORPORATED
    Inventors: Kazuki Ikeda, Kosuke Inoue, Kazuya Ichikawa, Tadashi Takemoto
  • Patent number: 9960137
    Abstract: A semiconductor device package ready for assembly includes: a semiconductor substrate; a first under-bump-metallurgy (UBM) layer disposed on the semiconductor substrate; a first conductive pillar disposed on the first UBM layer; and a second conductive pillar disposed on the first conductive pillar. A material of the first conductive pillar is different from a material of the second conductive pillar, and the material of the second conductive pillar includes an antioxidant.
    Type: Grant
    Filed: November 1, 2016
    Date of Patent: May 1, 2018
    Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
    Inventors: Chun-Chin Huang, Yung I. Yeh, Che-Ming Hsu
  • Patent number: 9381595
    Abstract: A Pb-free solder includes a first metal including at least Sn and Bi, and a second metal including at least an Ni—Fe alloy. In the first metal, the sum of Sn and Bi is 90 mass % or more, and a ratio of Bi is 5 to 15 mass %. A ratio of the second metal to the sum of mass of the first metal and mass of the second metal is 5 to 30 mass %.
    Type: Grant
    Filed: October 27, 2015
    Date of Patent: July 5, 2016
    Assignee: TDK CORPORATION
    Inventors: Tsutomu Yasui, Kenichi Kawabata
  • Patent number: 9305875
    Abstract: A method of manufacturing a semiconductor device includes forming a barrier metal film on a surface of at least one of a first electrode of a wiring board and a second electrode of a semiconductor element, providing a connection terminal between the first and second electrodes, the connection terminal being made of solder containing tin, bismuth and zinc, and bonding the connection terminal to the barrier metal film by heating the connection terminal and maintaining the temperature of the connection terminal at a constant temperature not lower than a melting point of the solder for a certain period of time.
    Type: Grant
    Filed: October 25, 2013
    Date of Patent: April 5, 2016
    Assignee: FUJITSU LIMITED
    Inventors: Kozo Shimizu, Seiki Sakuyama, Toyoo Miyajima
  • Patent number: 9278409
    Abstract: A core ball wherein a junction melting temperature and a low alpha dose are set for suppressing a soft error generation and solving a mounting problem. A metallic powder as a core is a sphere. A pure degree of a Cu ball of the metallic powder is equal to or higher than 99.9% but equal to or less than 99.995%. A contained amount of one of Pb and Bi or a total contained amount of Pb and Bi is equal to or higher than 1 ppm. A sphericity of the Cu ball is at least 0.95. A solder plating film for coating the Cu ball comprises Sn—Bi based alloy. U contained in the solder plating film is equal to or less than 5 ppb and Th is equal to or less than 5 ppb. An alpha dose of the core ball is equal to or less than 0.0200 cph/cm2.
    Type: Grant
    Filed: February 3, 2015
    Date of Patent: March 8, 2016
    Assignee: Senju Metal Industry Co., Ltd.
    Inventors: Hiroyoshi Kawasaki, Shigeki Kondo, Atsushi Ikeda, Takahiro Roppongi, Daisuke Soma, Isamu Sato
  • Patent number: 9272371
    Abstract: A solder joint is disposed on an electrical conductor which comprises silver. The solder joint comprises bismuth and tin. The solder joint has a microstructure comprising a bismuth-rich solder bulk and a silver-solder reaction zone. The bismuth-rich solder bulk is disposed adjacent to the silver-solder reaction zone. The solder joint comprises a plurality of bismuth-rich grains formed from bismuth and substantially dispersed throughout at least the bismuth-rich solder bulk of the solder joint. A window pane comprising the solder joint is also disclosed.
    Type: Grant
    Filed: May 30, 2013
    Date of Patent: March 1, 2016
    Assignees: AGC AUTOMOTIVE AMERICAS R&D, INC., AGC FLAT GLASS NORTH AMERICA, INC.
    Inventor: Timothy P. Hoepfner
  • Patent number: 9266196
    Abstract: Providing an Ag ball having a low alpha dose and a high sphericity regardless of impurity elements having an amount equal to or more than a predetermined value except for Ag. In order to suppress a soft error and reduce an connection fault, a content of U is equal to or less than 5 ppb, a content of Th is equal to or less than 5 ppb, a purity is equal to or more than 99.9% but equal to or less than 99.9995%, an alpha dose is equal to or less than 0.0200 cph/cm2, a content of either Pb or Bi or a total content of both Pb and Bi is equal to or more than 1 ppm, and a sphericity is equal to or more than 0.90.
    Type: Grant
    Filed: February 3, 2015
    Date of Patent: February 23, 2016
    Assignee: SENJU METAL INDUSTRY CO., LTD.
    Inventors: Takashi Akagawa, Hiroyoshi Kawasaki, Kazuhiko Matsui, Yuichi Koikeda, Masaru Sasaki, Hiroyuki Yamasaki, Takahiro Roppongi, Daisuke Soma, Isamu Sato
  • Patent number: 9113571
    Abstract: In a bond portion between an electrical conductive land and a connection terminal member, an intermetallic compound producing region in which at least a Cu—Sn-based, an M-Sn-based (M indicates Ni and/or Mn), and a Cu-M-Sn-based intermetallic compound are produced is arranged so as to be present at a connection terminal member side. In this intermetallic compound producing region, when a cross section of the bond portion is equally defined into 10 boxes in a longitudinal direction and a lateral direction to define 100 boxes in total, a ratio of the number of boxes in each of which at least two types of intermetallic compounds having different constituent elements are present to the total number of boxes other than boxes in each of which only a Sn-based metal component is present is about 70% or more.
    Type: Grant
    Filed: June 18, 2013
    Date of Patent: August 18, 2015
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Hideo Nakagoshi, Yoichi Takagi, Nobuaki Ogawa, Hidekiyo Takaoka, Kosuke Nakano
  • Patent number: 9080247
    Abstract: Provided are a tin-containing alloy plating bath being capable of manufacturing a tin-containing alloy plated product suitable for electric and electronic members with excellent anti-oxidation performance, and an electroplating method using the bath. Specifically the bath is a plating bath to deposit a tin-containing alloy on the surface of a substrate, which plating bath contains: (a) a tin compound containing 99.9% by mass to 46% by mass of tin based on entire metal mass in the plating bath; (b) a gadolinium compound containing 0.1% by mass to 54% by mass of gadolinium based on entire metal mass in the plating bath; (c) at least one complexing agent; and (d) a solvent, and the electroplating method uses the tin-containing alloy bath, thus can manufacture a tin-containing alloy plated product having excellent anti-oxidation performance.
    Type: Grant
    Filed: July 31, 2009
    Date of Patent: July 14, 2015
    Assignees: SHINJI DEWAKI, M-TECH JAPAN CO., LTD., YUKARI DEWAKI
    Inventors: Shinji Dewaki, Teru Matsuura, Yukari Dewaki
  • Publication number: 20150136195
    Abstract: The present invention provides a thermoelectric conversion material that is a material comprising elements less poisonous than Te and has a Seebeck coefficient comparable to BiTe. The present invention is a full-Heusler alloy that is represented by the composition formula Fe2+?Ti1+ySi1+z and has ?, y, and z allowing the material to fall within the region surrounded by (Fe, Ti, Si)=(50, 37, 13), (50, 14, 36), (45, 30, 25), (39.5, 25, 35.5), (54, 21, 25), and (55.5, 25, 19.5) by at % in an Fe—Ti—Si ternary alloy phase diagram.
    Type: Application
    Filed: November 19, 2014
    Publication date: May 21, 2015
    Inventors: Akinori NISHIDE, Jyun HAYAKAWA, Shin YABUCHI, Yosuke KUROSAKI, Naoto FUKATANI
  • Publication number: 20150125338
    Abstract: Identifying a stable phase of a binary alloy comprising a solute element and a solvent element. In one example, at least two thermodynamic parameters associated with grain growth and phase separation of the binary alloy are determined, and the stable phase of the binary alloy is identified based on the first thermodynamic parameter and the second thermodynamic parameter, wherein the stable phase is one of a stable nanocrystalline phase, a metastable nanocrystalline phase, and a non-nanocrystalline phase.
    Type: Application
    Filed: March 12, 2012
    Publication date: May 7, 2015
    Inventors: Heather Murdoch, Christopher A. Schuh
  • Patent number: 9010617
    Abstract: In a reflow process, a plurality of solder bumps between a first workpiece and a second workpiece is melted. During a solidification stage of the plurality of solder bumps, the plurality of solder bumps is cooled at a first cooling rate. After the solidification stage is finished, the plurality of solder bumps is cooled at a second cooling rate lower than the first cooling rate.
    Type: Grant
    Filed: January 10, 2011
    Date of Patent: April 21, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chen-Hua Yu, Wen-Yao Chang, Chien Rhone Wang, Kewei Zuo, Chung-Shi Liu
  • Publication number: 20150099183
    Abstract: Electrodes employing as active material metal nanoparticles synthesized by a novel route are provided. The nanoparticle synthesis is facile and reproducible, and provides metal nanoparticles of very small dimension and high purity for a wide range of metals. The electrodes utilizing these nanoparticles thus may have superior capability. Electrochemical cells employing said electrodes are also provided.
    Type: Application
    Filed: March 19, 2014
    Publication date: April 9, 2015
    Applicant: Toyota Motor Engineering & Manufacturing North America, Inc.
    Inventors: Nikhilendra Singh, Michael Paul Rowe
  • Publication number: 20150086263
    Abstract: A solder alloy has an alloy composition containing Zn of 3 through 25 mass %, Ti of 0.002 through 0.25 mass %, Al of 0.002 through 0.25 mass % and balance of Sn, a solder joint made of the solder alloy, and a jointing method using the solder alloy.
    Type: Application
    Filed: April 17, 2013
    Publication date: March 26, 2015
    Inventors: Hikaru Nomura, Shunsaku Yoshikawa
  • Publication number: 20150064483
    Abstract: A method of depositing a film of a metal having a volatilization temperature higher than 350° C., as well as, a composite material including the same are disclosed. The method can include providing the source material in a vacuum deposition processing chamber, and providing a substrate in the vacuum deposition processing chamber. The substrate can be spaced apart from, but in fluid communication with, the source material, and also maintained at a substrate temperature that is lower than the volatilization temperature. The method can also include reducing an internal pressure of the vacuum deposition processing chamber to a pressure between 0.1 and 14,000 pascals; volatilizing the source material into a volatilized metal by heating the source material to a first temperature that is higher than the volatilization temperature; and transporting the volatilized metal to the substrate using a heated carrier gas, whereby the volatilized metal deposits on the substrate and forms the metal film.
    Type: Application
    Filed: September 3, 2014
    Publication date: March 5, 2015
    Inventors: Mark E. Thompson, Francisco F. Navarro
  • Publication number: 20150024204
    Abstract: The present invention relates a process of preparing a nanopowder by using a natural source starting material wherein the nano powder is a nano metal or nano alloy or nano metal oxide or nano metal carbide or nano compound or nano composite or nanofluid. The nano product produced by the process has novel properties such as enhanced hardness, antibacterial properties, thermal properties, electrical properties, abrasive resistant, wear resistant, superior frictional properties, sliding wear resistance, enhanced tensile strength, compression strengths, enhanced load bearing capacity and corrosion properties.
    Type: Application
    Filed: January 9, 2013
    Publication date: January 22, 2015
    Inventor: Sudhakara Sastry AMANCHI BALA
  • Publication number: 20150004490
    Abstract: Novel intermetallic materials are provided that are composed of tin and one or more additional metal(s) having a formula M(1-x)-Sn5, where ?0.1?x?0.5, with 0.01?x?0.4 being more preferred and the second metallic element (M) is selected from iron (Fe), copper (Cu), cobalt(Co), nickel (Ni), and a combination of two or more of those metals. Due to low concentration of the second metallic element, the intermetallic compound affords an enhanced capacity applicable for electrochemical cells and may serve as an intermediate phase between Sn and MSn2. A method of synthesizing these intermetallic materials is also disclosed.
    Type: Application
    Filed: June 14, 2012
    Publication date: January 1, 2015
    Applicant: BROOKHAVEN SCIENCE ASSOCIATES, LLC
    Inventors: Xiao-Liang Wang, Weiqiang Han
  • Publication number: 20140348203
    Abstract: Provided in one embodiment is a method of identifying a stable phase of an ordering binary alloy system comprising a solute element and a solvent element, the method comprising: determining at least three thermodynamic parameters associated with grain boundary segregation, phase separation, and intermetallic compound formation of the ordering binary alloy system; and identifying the stable phase of the ordering binary alloy system based on the first thermodynamic parameter, the second thermodynamic parameter and the third thermodynamic parameter by comparing the first thermodynamic parameter, the second thermodynamic parameter and the third thermodynamic parameter with a predetermined set of respective thermodynamic parameters to identify the stable phase; wherein the stable phase is one of a stable nanocrystalline phase, a metastable nanocrystalline phase, and a non-nanocrystalline phase.
    Type: Application
    Filed: May 20, 2014
    Publication date: November 27, 2014
    Applicant: Massachusetts Institute of Technology
    Inventors: Heather A. Murdoch, Christopher A. Schuh
  • Patent number: 8887980
    Abstract: When electrodes of a BGA plated by electroless Ni plating are soldered with solder balls of a lead-free solder, peeling of soldered joints readily takes place under an external impact. When a BGA electrode plated by electroless Ni plating is soldered with a lead-free solder to which 0.03-0.1 mass percent of P is added, the growth of brittle SnNi intermetallic compounds formed on the portion being soldered and a P layer on the electroless Ni plating surface is suppressed, resulting in an increased bonding strength.
    Type: Grant
    Filed: June 10, 2005
    Date of Patent: November 18, 2014
    Assignee: Senju Metal Industry Co., Ltd.
    Inventors: Ryoichi Kurata, Daisuke Soma, Hiroshi Okada
  • Publication number: 20140302391
    Abstract: The present disclosure is directed at clathrate (Type I) allotropes of silicon, germanium and tin. In method form, the present disclosure is directed at methods for forming clathrate allotropes of silicon, germanium or tin which methods lead to the formation of empty cage structures suitable for use as electrodes in rechargeable type batteries.
    Type: Application
    Filed: March 27, 2014
    Publication date: October 9, 2014
    Applicant: Southwest Research Institute
    Inventors: Michael A. MILLER, Kwai S. CHAN, Wuwei LIANG, Candace K. CHAN
  • Patent number: 8834747
    Abstract: Compositions containing tin nanoparticles and electrically conductive particles are described herein. The tin nanoparticles can have a size below about 25 nm so as to make the compositions fusable at temperatures below that of bulk tin (m.p.=232° C.). Particularly, when the tin nanoparticles are less than about 10 nm in size, the compositions can have a fusion temperature of less than about 200° C. The compositions can contain a whisker suppressant to inhibit or substantially minimize the formation of tin whiskers after tin nanoparticle fusion. In some embodiments, the compositions contain tin nanoparticles, electrically conductive particles comprising copper particles, and a whisker suppressant comprising nickel particles. Methods for using the present compositions are also described herein. The present compositions can be used as a lead solder replacement that allows rework to be performed.
    Type: Grant
    Filed: March 3, 2011
    Date of Patent: September 16, 2014
    Assignee: Lockheed Martin Corporation
    Inventor: Alfred A. Zinn
  • Publication number: 20140186706
    Abstract: A method is presented for fabricating an anode preloaded with consumable metals. The method provides a material (X), which may be one of the following materials: carbon, metals able to be electrochemically alloyed with a metal (Me), intercalation oxides, electrochemically active organic compounds, and combinations of the above-listed materials. The method loads the metal (Me) into the material (X). Typically, Me is an alkali metal, alkaline earth metal, or a combination of the two. As a result, the method forms a preloaded anode comprising Me/X for use in a battery comprising a M1YM2Z(CN)N·MH2O cathode, where M1 and M2 are transition metals. The method loads the metal (Me) into the material (X) using physical (mechanical) mixing, a chemical reaction, or an electrochemical reaction. Also provided is preloaded anode, preloaded with consumable metals.
    Type: Application
    Filed: March 6, 2014
    Publication date: July 3, 2014
    Applicant: Sharp Laboratories of America, Inc.
    Inventors: Long Wang, Yuhao Lu, Jong-Jan Lee
  • Patent number: 8765053
    Abstract: A method for producing a Sn based alloy (15) comprising a metal matrix of a metal matrix material, wherein the metal matrix material comprises Sn, and inclusions of a compound material, further referred to as compound inclusions, wherein the compound material contains one element or a combination of elements of the group Ti, V, Zr, Hf, further referred to as dopant, and one or a plurality of other elements, in particular Sn, Cu and/or Nb. Particles of the metal matrix material, further referred to as matrix particles, are mixed with particles of the compound material, further referred to as compound particles, and the matrix particles and the compound particles are compacted during and/or after their mixing. A Sn based alloy containing finer compound inclusion of a dopant can be prepared, in order to produce Nb3Sn superconductor material with a superior current carrying capacity.
    Type: Grant
    Filed: January 27, 2010
    Date of Patent: July 1, 2014
    Assignee: Bruker BioSpin AG
    Inventor: Florin Buta
  • Publication number: 20140138155
    Abstract: A glazing is disclosed comprising at least one ply of glass having an electrically conductive component on at least one surface, and an electrical connector electrically connected to the electrically conductive component through a soldered joint, the solder of the joint having a composition comprising 0.5 wt % or more indium, wherein the electrical connector comprises a nickel plated contact for contacting the solder. Also disclosed are solders having a composition comprising 14 to 75 wt % In, 14 to 75 wt % Sn, to 5 wt % Ag, to 5 wt % Ni, and less than 0.1 wt % Pb. Also disclosed is use of a solder having a composition comprising 0.5 wt % or more indium to solder a nickel plated electrical connector to an electrically conductive component on the surface of a ply of glass. The aspects of the invention improve the durability of electrical connections on glazing.
    Type: Application
    Filed: May 2, 2012
    Publication date: May 22, 2014
    Applicants: PILKINGTON GROUP LIMITED, NIPPON SHEET GLASS CO., LTD., UCHIHASHI ESTEC CO., LTD., NISHINIHON SHOKO CO., LTD
    Inventors: Michael Lyon, Naotaka Ikawa, Kazuo Inada, Mamoru Yoshida, Takashi Muromachi, Kazuhisa Ono, Kozo Okamoto, Takashi Suzuki
  • Patent number: 8698184
    Abstract: A light emitting diode chip a support layer having a first face and a second face opposite the first face, a diode region on the first face of the support layer, and a bond pad on the second face of the support layer. The bond pad includes a gold-tin structure having a weight percentage of tin of 50% or more. The light emitting diode chip may include a plurality of active regions that are connected in electrical series on the light emitting diode chip.
    Type: Grant
    Filed: January 21, 2011
    Date of Patent: April 15, 2014
    Assignee: Cree, Inc.
    Inventors: Michael John Bergmann, Christopher D. Williams, Kevin Shawne Schneider, Kevin Haberern, Matthew Donofrio
  • Publication number: 20140099229
    Abstract: A negative electrode active material for an electric device includes an alloy containing Si in a range of greater than or equal to 27% by mass and less than 100% by mass, Sn in a range of greater than 0% by mass and less than or equal to 73% by mass, V in a range of greater than 0% by mass and less than or equal to 73% by mass, and inevitable impurities as a residue. The negative electrode active material can be obtained with, for example, a multi DC magnetron sputtering apparatus by use of Si, Sn, and V as targets. An electric device using the negative electrode active material can achieve long cycle life and ensure a high capacity and cycle durability.
    Type: Application
    Filed: March 9, 2012
    Publication date: April 10, 2014
    Inventors: Manabu Watanabe, Masao Yoshida, Osamu Tanaka
  • Publication number: 20140065492
    Abstract: The present invention provides an electrode that can be used for a sodium secondary battery having a larger discharge capacity when charging and discharging are performed repeatedly than that of the prior art. This sodium secondary battery electrode contains tin (Sn) powder as an electrode active material. The electrode, particularly, further contains one or more electrode-forming agents selected from the group consisting of poly(vinylidene fluoride) (PVDF), poly(acrylic acid) (PAA), poly(sodium acrylate) (PAANa), and carboxymethylcellulose (CMC), thereby making it possible to provide a sodium secondary battery having even greater electrode performance.
    Type: Application
    Filed: March 19, 2012
    Publication date: March 6, 2014
    Applicant: SUMITOMO CHEMICAL COMPANY, LIMITED
    Inventors: Shinichi Komaba, Naoaki Yabuuchi, Wataru Murata, Toru Ishikawa, Yuta Matsuura, Satoru Kuze
  • Publication number: 20140044589
    Abstract: The present invention provides a lead-free solder composition for glass. The lead-free solder composition for glass includes indium, zinc, and tin. The indium (In) ranges from about 30.0 wt % to about 60 wt %. The zinc (Zn) ranges from about 0.01 wt % to about 11.0 wt %. The tin (Sn) is included as a remaining component.
    Type: Application
    Filed: December 12, 2012
    Publication date: February 13, 2014
    Applicants: HYUNDAI MOTOR COMPANY, HEESUNG MATERIAL LTD., KOREA AUTOGLASS CORPORATION, KIA MOTORS CORPORATION
    Inventors: Hae Won Jeong, Hyun Dal Park, Tae Seung Lee, Seung Kyu Kim, Hong Nho Joo, Ho June Yoon, Min Ho Bak, Joo Dong Lee, Hyun Chae Jung, Sun Myung Lee
  • Patent number: 8641964
    Abstract: An alloy suitable for use in a ball grid array or chip scale package comprising from 0.05-1.5 wt. % copper, from 0.1-2 wt. % silver, from 0.005-0.3 wt % nickel, from 0.003-0.3 wt % chromium, from 0-0.1 wt. % phosphorus, from 0-0.1 wt. % germanium, from 0-0.1 wt. % gallium, from 0-0.3 wt. % of one or more rare earth elements, from 0-0.3 wt. % indium, from 0-0.3 wt. % magnesium, from 0-0.3 wt. % calcium, from 0-0.3 wt. % silicon, from 0-0.3 wt. % aluminum, from 0-0.3 wt. % zinc, from 0-2 wt. % bismuth, from 0-1 wt. % antimony, from 0-0.2 wt % manganese, from 0-0.3 wt % cobalt, from 0-0.3 wt % iron, and from 0-0.1 wt % zirconium, and the balance tin, together with unavoidable impurities.
    Type: Grant
    Filed: February 25, 2008
    Date of Patent: February 4, 2014
    Assignee: Fry's Metals, Inc.
    Inventors: Brian G. Lewis, Bawa Singh, John Laughlin, Ranjit Pandher
  • Publication number: 20140009059
    Abstract: Energy-saving lamps contain a gas filling of mercury vapour and argon in a gas discharge bulb. Amalgam spheres are used for filling the gas discharge bulb with mercury. A tin amalgam having a high proportion by weight of mercury in the range from 30 to 70% by weight is proposed. Owing to the high mercury content, the amalgam spheres have liquid amalgam phases on the surface. Coating of the spheres with a tin or tin alloy powder converts the liquid amalgam phases on the surface into a solid amalgam having a high tin content. This prevents conglutination of the amalgam spheres during storage and processing.
    Type: Application
    Filed: June 27, 2013
    Publication date: January 9, 2014
    Applicant: UMICORE AG & CO. KG
    Inventors: Georg Ptaschek, Calogero Di Vincenzo
  • Publication number: 20130336837
    Abstract: A lead-free solder alloy for a vehicle glass according to the present invention contains 26.0 to 56.0 mass % of In, 0.1 to 5.0 mass % of Ag, 0.002 to 0.05 mass % of Ti, 0.001 to 0.01 mass % of Si and the balance being Sn. The lead-free solder alloy may optionally contain 0.005 to 0.1 mass % of Cu and 0.001 to 0.01 mass % of B. This solder alloy can suitably be applied vehicle glasses and show good joint strength to glass materials and high acid resistance, salt water resistance and temperature cycle resistance.
    Type: Application
    Filed: February 27, 2012
    Publication date: December 19, 2013
    Applicant: Central Glass Company, Limited
    Inventors: Mizuki Nishi, Takayuki Ogawa, Mitsuo Hori
  • Patent number: 8541336
    Abstract: A tin-carbon compound that is a reaction product of tin and carbon, wherein the tin and the carbon form a single phase material that is meltable. The compound is one in which the carbon does not phase separate from the tin when the single phase material is heated to a melting temperature.
    Type: Grant
    Filed: November 15, 2012
    Date of Patent: September 24, 2013
    Assignee: Third Millennium Metals, LLC
    Inventors: Jason V. Shugart, Roger C. Scherer
  • Patent number: 8501088
    Abstract: To provide a solder alloy, a solder ball and an electronic member having a solder bump, used for connection with a mother board or the like, having a melting temperature of less than 250° C. for the solder alloy, achieving high drop impact resistance required in mobile devices or the like. A solder alloy is used which consists of not less than 0.1 mass ppm of boron and not greater than 200 mass ppm of boron and a remainder comprising substantially not less than 40% by mass of Sn, in which its melting temperature is less than 250° C.
    Type: Grant
    Filed: December 30, 2008
    Date of Patent: August 6, 2013
    Assignees: Nippon Steel & Sumikin Materials Co., Ltd., Nippon Micrometal Corporation
    Inventors: Takayuki Kobayashi, Tsutomu Sasaki, Masamoto Tanaka, Katsuichi Kimura
  • Patent number: 8496873
    Abstract: The invention relates to Sn—Cu—Ag alloy nanoparticles, preparation method thereof and ink or paste using the alloy nanoparticles in which the alloy nanoparticles are suitable for metal ink having excellent electrical conductivity or solder materials having low calcinating temperature.
    Type: Grant
    Filed: June 13, 2012
    Date of Patent: July 30, 2013
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Kwi-Jong Lee, Hyuck-Mo Lee, Hyun-Joon Song, Yun-Hwan Jo, Ji-Chan Park, Jung-Up Bang, Dong-Hoon Kim
  • Patent number: 8491774
    Abstract: Tin and tin alloy deposits which are substantially free of certain crystal planes or equivalents thereof inhibit or prevent whisker formation. The tin or tin alloy deposits which are free of these crystal planes and inhibit or prevent whisker formation may be deposited by electroplating. Tin alloys include tin/copper, tin/nickel, tin/silver, tin/bismuth, tin/zinc and tin/antimony. The tin and tin alloy baths used to deposit the tin and tin alloys may be acidic or alkaline.
    Type: Grant
    Filed: December 19, 2005
    Date of Patent: July 23, 2013
    Assignee: Rohm and Haas Electronic Materials LLC
    Inventor: André Egli
  • Patent number: 8398768
    Abstract: The invention relates to methods of making articles of semiconducting material on a mold comprising semiconducting material and semiconducting material articles formed thereby, such as articles of semiconducting material that may be useful in making photovoltaic cells.
    Type: Grant
    Filed: May 14, 2009
    Date of Patent: March 19, 2013
    Assignee: Corning Incorporated
    Inventors: Glen Bennett Cook, Christopher Scott Thomas, Natesan Venkataraman
  • Publication number: 20120282132
    Abstract: Methods of the invention allow rapid production of high-porous, large-surface-area nanostructured metal and/or metal oxide at attractive low cost applicable to a wide variety of commercial applications such as sensors, catalysts and photovoltaics.
    Type: Application
    Filed: July 13, 2010
    Publication date: November 8, 2012
    Inventors: James J. Watkins, Christos Fotios Karanikas, David Reisner, Xinqing Ma, Jeff Roth, T. Danny Xiao, Stephen Paul Murphy
  • Publication number: 20120280593
    Abstract: A solder material can be used for fastening an outer electrode on a piezoelectric component. The solder material contains tin as the main constituent and at least one addition from the group of cobalt, tungsten, osmium, titanium, vanadium, iron and rare earth metals. A piezoelectric component includes such a solder material. The solder material is applied by means of a base metallization.
    Type: Application
    Filed: November 22, 2010
    Publication date: November 8, 2012
    Applicant: EPCOS AG
    Inventors: Franz Rinner, Markus Weiglhofer, Marion Ottlinger, Reinhard Gabl, Martin Galler, Christoph Auer, Georg Kuegerl
  • Patent number: 8197612
    Abstract: Semiconductor packaging techniques are provided which optimize metallurgical properties of a joint using dissimilar solders. A solder composition for Controlled Collapse Chip Connection processing includes a combination of a tin based lead free solder component designed for a chip and a second solder component designed for a laminate. The total concentration of module Ag after reflow is less than 1.9% by weight. A method of manufacturing a solder component is also provided.
    Type: Grant
    Filed: April 29, 2008
    Date of Patent: June 12, 2012
    Assignee: International Business Machines Corporation
    Inventors: James A Busby, Minhua Lu, Valerie A Oberson, Eric D Perfecto, Kamalesh K Srivastava, Brian R Sundlof, Julien Sylvestre, Renee L Weisman
  • Publication number: 20120138843
    Abstract: The present invention provides a method of making a substantially phase pure compound including a cation and an anion. The compound is made by mixing in a ball-milling device a first amount of the anion with a first amount of the cation that is less than the stoichiometric amount of the cation, so that substantially all of the first amount of the cation is consumed. The compound is further made by mixing in a ball-milling device a second amount of the cation that is less than the stoichiometric amount of the cation with the mixture remaining in the device. The mixing is continued until substantially all of the second amount of the cation and any unreacted portion of anion X are consumed to afford the substantially phase pure compound.
    Type: Application
    Filed: June 8, 2011
    Publication date: June 7, 2012
    Applicants: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, CALIFORNIA INSTITUTE OF TECHNOLOGY
    Inventors: Jean-Pierre Fleurial, Sabah K. Bux, Richard B. Kaner
  • Publication number: 20120109287
    Abstract: Methods for preparing an implant coated with a conversion electron emitting source (CEES) are disclosed. The typical method includes cleaning the surface of the implant; placing the implant in an activating solution comprising hydrochloric acid to activate the surface; reducing the surface by H2 evolution in H2SO4 solution; and placing the implant in an electroplating solution that includes ions of the CEES, HCl, H2SO4, and resorcinol, gelatin, or a combination thereof. Alternatively, before tin plating, a seed layer is formed on the surface. The electroplated CEES coating can be further protected and stabilized by annealing in a heated oven, by passivation, or by being covered with a protective film. The invention also relates to a holding device for holding an implant, wherein the device selectively prevents electrodeposition on the portions of the implant contacting the device.
    Type: Application
    Filed: December 22, 2011
    Publication date: May 3, 2012
    Inventors: Suresh C. Srivastava, Gilbert R. Gonzales, Radoslav Adzic, George E. Meinken
  • Publication number: 20120107228
    Abstract: There is provided a hydrogen gas generating member which safely facilitates the hydrogen gas generation reaction by bringing an Al alloy which is subjected to rolling treatment or powdering treatment into contact with water. A hydrogen gas generating member 20 includes a texture in which Al is finely dispersed in a metal matrix, where hydrogen gas is generated by bringing the hydrogen gas generating member into contact with water. A fixing member 14 for mounting the hydrogen gas generating member 20 is provided in a hydrogen generating apparatus 10 and is brought into contact with a water 15 that is stored inside. The hydrogen gas generated from the surface is supplied outside through a hydrogen gas collecting, pipe 12 and stored in a storage tank (not shown).
    Type: Application
    Filed: August 11, 2008
    Publication date: May 3, 2012
    Applicant: Japan Science and Technology Agency
    Inventors: Kiyohito Ishida, Ryosuke Kainuma, Ikuo Ohnuma, Toshihiro Omori, Yoshikazu Takaku, Takehito Hagisawa
  • Patent number: 8128868
    Abstract: Micro-addition of a metal to a Sn-based lead-free C4 ball is employed to enhance reliability. Specifically, a metal having a low solubility in Sn is added in a small quantity corresponding to less than 1% in atomic concentration. Due to the low solubility of the added metal, fine precipitates are formed during solidification of the C4 ball, which act as nucleation sites for formation multiple grains in the solidified C4 ball. The fine precipitates also inhibit rapid grain growth by plugging grain boundaries and act as agents for pinning dislocations in the C4 ball. The grain boundaries enable grain boundary sliding for mitigation of stress during thermal cycling of the semiconductor chip and the package on the C4 ball. Further, the fine precipitates prevent electromigration along the grain boundaries due to their pinned nature.
    Type: Grant
    Filed: October 26, 2009
    Date of Patent: March 6, 2012
    Assignee: International Business Machines Corporation
    Inventor: Mukta G. Farooq
  • Publication number: 20120038042
    Abstract: A lead-free solder alloy, a solder ball and an electronic member comprising a solder bump which enable the prevention of the occurrence of yellow discoloration on the surface of a solder after soldering, the surface of a solder bump after the formation of the bump in a BGA, and the surface of a solder bump after a burn-in test of a BGA. Specifically disclosed are: a lead-free solder alloy; a solder ball; and an electronic member comprising a solder bump, containing at least one additive element selected from Li, Na, K, Ca, Be, Mg, Sc, Y, lanthanoid series elements, Ti, Zr, Hf, Nb, Ta, Mo, Zn, Al, Ga, In, Si and Mn in the total amount of 1 ppm by mass to 0.1% by mass inclusive, with the remainder being 40% by mass or more of Sn.
    Type: Application
    Filed: April 12, 2010
    Publication date: February 16, 2012
    Applicants: Nippon Micrometal Corporation, Nippon Steel Materials Co., Ltd.
    Inventors: Tsutomu Sasaki, Shinichi Terashima, Masamoto Tanaka, Katsuichi Kimura
  • Patent number: 8110167
    Abstract: Methods of the present invention can be used to synthesize nanowires with controllable compositions and/or with multiple elements. The methods can include coating solid powder granules, which comprise a first element, with a catalyst. The catalyst and the first element should form when heated a liquid, mixed phase having a eutectic or peritectic point. The granules, which have been coated with the catalyst, can then be heated to a temperature greater than or equal to the eutectic or peritectic point. During heating, a vapor source comprising the second element is introduced. The vapor source chemically interacts with the liquid, mixed phase to consume the first element and to induce condensation of a product that comprises the first and second elements in the form of a nanowire.
    Type: Grant
    Filed: February 10, 2009
    Date of Patent: February 7, 2012
    Assignee: Battelle Memorial Institute
    Inventors: Jiguang Zhang, Jun Liu, Zhenguo Yang, Guanguang Xia, Leonard S Fifield, Donghai Wang, Daiwon Choi, Gordon Graff, Larry R Pederson
  • Patent number: 8062585
    Abstract: A method includes releasing mercury in devices requiring mercury, in particular fluorescent lamps. The method includes the use of manganese-mercury compositions.
    Type: Grant
    Filed: June 21, 2007
    Date of Patent: November 22, 2011
    Assignee: Saes Getters S.p.A.
    Inventors: Alessio Corazza, Vincenzo Massaro, Alessandro Gallitognotta
  • Publication number: 20110218109
    Abstract: A clathrate compound of formula (I): M8AxBy-x (I) wherein: M is an alkaline earth metal, a rare earth metal, an alkali metal, Cd, or a combination thereof, A is Ga, Al, In, Zn or a combination thereof; B is Ge, Si, Sn, Ni or a combination thereof; and 12?x?16, 40?y?43, x and y each is or is not an integer. Embodiments of the invention also include method of making and using the clathrate compound.
    Type: Application
    Filed: November 4, 2009
    Publication date: September 8, 2011
    Inventors: Shengqiang Bai, Lidong Chen, Lin He, Li Wang, Wenbin Zhang, Yanfei Zhou
  • Publication number: 20110182041
    Abstract: First solder is lead-free solder that contains no lead (Pb). The first solder includes a first metal that contains at least Sn; and a second metal that contains at least a Ni—Fe alloy.
    Type: Application
    Filed: January 13, 2011
    Publication date: July 28, 2011
    Applicant: TDK CORPORATION
    Inventors: Tsutomu YASUI, Hisayuki ABE, Kenichi KAWABATA, Tomoko KITAMURA
  • Patent number: 7964492
    Abstract: A semiconductor device includes a semiconductor element, a support member bonded to a first surface of the semiconductor element with a first bonding material and a lead electrode bonded to a second surface of the semiconductor element supported on the support member with a second bonding material, and further including a method of producing the semiconductor device. Respective connecting parts of the support member and the lead electrode are Ni-plated and each of the first and the second bonding material is a Sn solder having a Cu6Sn5 content greater than a eutectic content.
    Type: Grant
    Filed: September 22, 2008
    Date of Patent: June 21, 2011
    Assignee: Hitachi, Ltd.
    Inventors: Osamu Ikeda, Masato Nakamura, Satoshi Matsuyoshi, Koji Sasaki, Shinji Hiramitsu