Abstract: A thermoelectric device can comprise at least one first thermoelectric element, at least one second thermoelectric element, and a bridging structure. The bridging structure can include a bridging layer comprising a silver-gallium alloy. The silver-gallium alloy containing a bridging layer can provide flexibility and stress release to the thermoelectric device when subjected to multiple heating cycles, and may have a very low electrical resistance and thermal resistance.

Abstract: Disclosed herein are filtration articles comprising a porous ceramic structure comprising a plurality of channels separated by a plurality of porous interior walls, and a nanomembrane disposed on at least a portion of a surface of the porous ceramic structure, wherein the nanomembrane comprises nanoparticles of at least one inorganic oxide, and wherein the nanoparticles are present in a concentration ranging from about 0.001 g/L to about 1 g/L based on the total volume of the porous ceramic structure. Methods for making such filtration articles and methods for filtering a particulate from a fluid using such filtration articles are also disclosed herein.

Abstract: Some implementations of the disclosure relate to a lead-free solder paste with mixed solder powders that is particularly suitable for high temperature soldering applications involving multiple board-level reflow operations. In one implementation, the solder paste consists of 10 wt % to 90 wt % of a first solder alloy powder, the first solder alloy powder consisting of an SnSbCuAg solder alloy that has a wt % ratio of Sn:Sb of 0.75 to 1.1; 10 wt % to 90 wt % of a second solder alloy powder, the second solder alloy powder consisting of an Sn solder alloy including at least 80 wt % of Sn; and a remainder of flux.

Abstract: Provided are a solder alloy which has excellent temperature cycle characteristics and in which yellowish discoloration is suppressed, excellent wettability is maintained, and an increase in viscosity of a solder paste over time can be suppressed, and a solder paste, a solder ball, and a solder joint in which the solder alloy is used. The solder alloy consists of, by mass %, 1.0% to 5.0% of Ag, 0.5% to 3.0% of Cu, 0.5% to 7.0% of Sb, 0.0040% to 0.025% of As, and a balance of Sn.

Abstract: A solder alloy that contains 0.005 mass % or more and 0.1 mass % or less of Mn, 0.001 mass % or more and 0.1 mass % or less of Ge, and a balance of Sn. A plurality of Ge oxides is distributed on an outermost surface side of an oxide film including Sn oxide, Mn oxide and Ge oxide by adding 0.005 mass % or more and 0.1 mass % or less of Mn, 0.001 mass % or more and 0.1 mass % or less of Ge to the solder alloy having a principal ingredient of Sn, so that it is possible to obtain the discolor-inhibiting effect even under the high-temperature and high-humidity environment.

Abstract: Implementations of the disclosure are directed to a lead-free mixed solder powder paste suitable for low temperature to middle temperature soldering applications. The lead-free solder paste may consist of: an amount of a first solder alloy powder between 44 wt % and 83 wt %, the first solder alloy powder comprising Sn; an amount of a second solder alloy powder between 5 wt % to 44 wt %, the second alloy powder comprising Sn, where the first solder alloy powder has a liquidus temperature lower than a solidus temperature of the second solder alloy powder; and a remainder of flux. The solder paste may be used for reflow at a peak temperature below the solidus temperature of the higher solidus temperature solder powder but above the melting temperature of the lower solidus temperature one.

Abstract: A solder alloy, includes: about 3 wt % to about 15 wt % of Sb; about 0.01 wt % to about 1.5 wt % of Te; and about 0.005 wt % to about 1 wt % of at least one element selected from the group consisting of Zn, Co, and Cr; and a balance of Sn.

Abstract: An article comprises a substrate; a polymer coating; and an intermediate layer disposed between the substrate and the polymer coating, the intermediate layer comprising a carbon composite, wherein the carbon composite comprises carbon and a binder containing one or more of the following: SiO2; Si; B; B2O3; a metal; or an alloy of the metal; and wherein the metal comprises one or more of the following: aluminum; copper; titanium; nickel; tungsten; chromium; iron; manganese; zirconium; hafnium; vanadium; niobium; molybdenum; tin; bismuth; antimony; lead; cadmium; or selenium.

Abstract: There is provided a solder alloy in which 0.5 mass % or more and 1.25 mass % or less of Sb, In satisfying the following formula (I) or (II) when [Sb] is set as a Sb content percentage (mass %) and [In] is set as an In content percentage (mass %): in a case of 0.5?[Sb]?1.0, 5.5?[In]?5.50+1.06[Sb] . . . (I), in a case of 1.0<[Sb]?1.25, 5.5?[In]?6.35+0.212[Sb] . . . (II) (in the formula, [Sb] indicates a Sb content percentage (mass %) and [In] indicates an In content percentage (mass %)), 0.5 mass % or more and 1.2 mass % or less of Cu, 0.1 mass % or more and 3.0 mass % or less of Bi, 1.0 mass % or more and 4.0 mass % or less of Ag, and 0 mass % or more and 0.025 mass % or less of Co are contained, and has the remainder consisting essentially of Sn.

Abstract: Provided is a solder alloy that contains 0.01 mass % or more and 0.1 mass % or less of Fe, 0.005 mass % or more and less than 0.02 mass % of Co, 0.1 mass % or more and 4.5 mass % or less of Ag, 0.1 mass % or more and 0.8 mass % or less of Cu, and the balance being Sn.

Abstract: A semiconductor device package ready for assembly includes: a semiconductor substrate; a first under-bump-metallurgy (UBM) layer disposed on the semiconductor substrate; a first conductive pillar disposed on the first UBM layer; and a second conductive pillar disposed on the first conductive pillar. A material of the first conductive pillar is different from a material of the second conductive pillar, and the material of the second conductive pillar includes an antioxidant.

Abstract: A solder alloy substantially consists of tin, silver, indium, bismuth, and antimony. With respect to the total amount of the solder alloy, the content ratio of the silver is 2.8 mass % or more and 4 mass % or less; the content ratio of the indium is 6.2 mass % or more and 9.0 mass % or less; the content ratio of the bismuth is 0.7 mass % or more and 5.0 mass % or less; the content ratio of the antimony is 0.3 mass % or more and 5.0 mass % or less; and the content ratio of the tin is the remaining ratio and the value of A is 4.36 or less wherein A=0.87×[In content ratio (mass %)]?0.41×[Ag content ratio (mass %)]?0.82×[Sb content ratio (mass %)].

Abstract: A Pb-free solder includes a first metal including at least Sn and Bi, and a second metal including at least an Ni—Fe alloy. In the first metal, the sum of Sn and Bi is 90 mass % or more, and a ratio of Bi is 5 to 15 mass %. A ratio of the second metal to the sum of mass of the first metal and mass of the second metal is 5 to 30 mass %.

Abstract: A method of manufacturing a semiconductor device includes forming a barrier metal film on a surface of at least one of a first electrode of a wiring board and a second electrode of a semiconductor element, providing a connection terminal between the first and second electrodes, the connection terminal being made of solder containing tin, bismuth and zinc, and bonding the connection terminal to the barrier metal film by heating the connection terminal and maintaining the temperature of the connection terminal at a constant temperature not lower than a melting point of the solder for a certain period of time.

Abstract: A core ball wherein a junction melting temperature and a low alpha dose are set for suppressing a soft error generation and solving a mounting problem. A metallic powder as a core is a sphere. A pure degree of a Cu ball of the metallic powder is equal to or higher than 99.9% but equal to or less than 99.995%. A contained amount of one of Pb and Bi or a total contained amount of Pb and Bi is equal to or higher than 1 ppm. A sphericity of the Cu ball is at least 0.95. A solder plating film for coating the Cu ball comprises Sn—Bi based alloy. U contained in the solder plating film is equal to or less than 5 ppb and Th is equal to or less than 5 ppb. An alpha dose of the core ball is equal to or less than 0.0200 cph/cm2.

Abstract: A solder joint is disposed on an electrical conductor which comprises silver. The solder joint comprises bismuth and tin. The solder joint has a microstructure comprising a bismuth-rich solder bulk and a silver-solder reaction zone. The bismuth-rich solder bulk is disposed adjacent to the silver-solder reaction zone. The solder joint comprises a plurality of bismuth-rich grains formed from bismuth and substantially dispersed throughout at least the bismuth-rich solder bulk of the solder joint. A window pane comprising the solder joint is also disclosed.

Abstract: Providing an Ag ball having a low alpha dose and a high sphericity regardless of impurity elements having an amount equal to or more than a predetermined value except for Ag. In order to suppress a soft error and reduce an connection fault, a content of U is equal to or less than 5 ppb, a content of Th is equal to or less than 5 ppb, a purity is equal to or more than 99.9% but equal to or less than 99.9995%, an alpha dose is equal to or less than 0.0200 cph/cm2, a content of either Pb or Bi or a total content of both Pb and Bi is equal to or more than 1 ppm, and a sphericity is equal to or more than 0.90.

Abstract: In a bond portion between an electrical conductive land and a connection terminal member, an intermetallic compound producing region in which at least a Cu—Sn-based, an M-Sn-based (M indicates Ni and/or Mn), and a Cu-M-Sn-based intermetallic compound are produced is arranged so as to be present at a connection terminal member side. In this intermetallic compound producing region, when a cross section of the bond portion is equally defined into 10 boxes in a longitudinal direction and a lateral direction to define 100 boxes in total, a ratio of the number of boxes in each of which at least two types of intermetallic compounds having different constituent elements are present to the total number of boxes other than boxes in each of which only a Sn-based metal component is present is about 70% or more.

Abstract: Provided are a tin-containing alloy plating bath being capable of manufacturing a tin-containing alloy plated product suitable for electric and electronic members with excellent anti-oxidation performance, and an electroplating method using the bath. Specifically the bath is a plating bath to deposit a tin-containing alloy on the surface of a substrate, which plating bath contains: (a) a tin compound containing 99.9% by mass to 46% by mass of tin based on entire metal mass in the plating bath; (b) a gadolinium compound containing 0.1% by mass to 54% by mass of gadolinium based on entire metal mass in the plating bath; (c) at least one complexing agent; and (d) a solvent, and the electroplating method uses the tin-containing alloy bath, thus can manufacture a tin-containing alloy plated product having excellent anti-oxidation performance.

Abstract: The present invention provides a thermoelectric conversion material that is a material comprising elements less poisonous than Te and has a Seebeck coefficient comparable to BiTe. The present invention is a full-Heusler alloy that is represented by the composition formula Fe2+?Ti1+ySi1+z and has ?, y, and z allowing the material to fall within the region surrounded by (Fe, Ti, Si)=(50, 37, 13), (50, 14, 36), (45, 30, 25), (39.5, 25, 35.5), (54, 21, 25), and (55.5, 25, 19.5) by at % in an Fe—Ti—Si ternary alloy phase diagram.

Abstract: Identifying a stable phase of a binary alloy comprising a solute element and a solvent element. In one example, at least two thermodynamic parameters associated with grain growth and phase separation of the binary alloy are determined, and the stable phase of the binary alloy is identified based on the first thermodynamic parameter and the second thermodynamic parameter, wherein the stable phase is one of a stable nanocrystalline phase, a metastable nanocrystalline phase, and a non-nanocrystalline phase.

Abstract: In a reflow process, a plurality of solder bumps between a first workpiece and a second workpiece is melted. During a solidification stage of the plurality of solder bumps, the plurality of solder bumps is cooled at a first cooling rate. After the solidification stage is finished, the plurality of solder bumps is cooled at a second cooling rate lower than the first cooling rate.

Abstract: Electrodes employing as active material metal nanoparticles synthesized by a novel route are provided. The nanoparticle synthesis is facile and reproducible, and provides metal nanoparticles of very small dimension and high purity for a wide range of metals. The electrodes utilizing these nanoparticles thus may have superior capability. Electrochemical cells employing said electrodes are also provided.

Abstract: A solder alloy has an alloy composition containing Zn of 3 through 25 mass %, Ti of 0.002 through 0.25 mass %, Al of 0.002 through 0.25 mass % and balance of Sn, a solder joint made of the solder alloy, and a jointing method using the solder alloy.

Abstract: A method of depositing a film of a metal having a volatilization temperature higher than 350° C., as well as, a composite material including the same are disclosed. The method can include providing the source material in a vacuum deposition processing chamber, and providing a substrate in the vacuum deposition processing chamber. The substrate can be spaced apart from, but in fluid communication with, the source material, and also maintained at a substrate temperature that is lower than the volatilization temperature. The method can also include reducing an internal pressure of the vacuum deposition processing chamber to a pressure between 0.1 and 14,000 pascals; volatilizing the source material into a volatilized metal by heating the source material to a first temperature that is higher than the volatilization temperature; and transporting the volatilized metal to the substrate using a heated carrier gas, whereby the volatilized metal deposits on the substrate and forms the metal film.

Abstract: The present invention relates a process of preparing a nanopowder by using a natural source starting material wherein the nano powder is a nano metal or nano alloy or nano metal oxide or nano metal carbide or nano compound or nano composite or nanofluid. The nano product produced by the process has novel properties such as enhanced hardness, antibacterial properties, thermal properties, electrical properties, abrasive resistant, wear resistant, superior frictional properties, sliding wear resistance, enhanced tensile strength, compression strengths, enhanced load bearing capacity and corrosion properties.

Abstract: Novel intermetallic materials are provided that are composed of tin and one or more additional metal(s) having a formula M(1-x)-Sn5, where ?0.1?x?0.5, with 0.01?x?0.4 being more preferred and the second metallic element (M) is selected from iron (Fe), copper (Cu), cobalt(Co), nickel (Ni), and a combination of two or more of those metals. Due to low concentration of the second metallic element, the intermetallic compound affords an enhanced capacity applicable for electrochemical cells and may serve as an intermediate phase between Sn and MSn2. A method of synthesizing these intermetallic materials is also disclosed.

Abstract: Provided in one embodiment is a method of identifying a stable phase of an ordering binary alloy system comprising a solute element and a solvent element, the method comprising: determining at least three thermodynamic parameters associated with grain boundary segregation, phase separation, and intermetallic compound formation of the ordering binary alloy system; and identifying the stable phase of the ordering binary alloy system based on the first thermodynamic parameter, the second thermodynamic parameter and the third thermodynamic parameter by comparing the first thermodynamic parameter, the second thermodynamic parameter and the third thermodynamic parameter with a predetermined set of respective thermodynamic parameters to identify the stable phase; wherein the stable phase is one of a stable nanocrystalline phase, a metastable nanocrystalline phase, and a non-nanocrystalline phase.

Abstract: When electrodes of a BGA plated by electroless Ni plating are soldered with solder balls of a lead-free solder, peeling of soldered joints readily takes place under an external impact. When a BGA electrode plated by electroless Ni plating is soldered with a lead-free solder to which 0.03-0.1 mass percent of P is added, the growth of brittle SnNi intermetallic compounds formed on the portion being soldered and a P layer on the electroless Ni plating surface is suppressed, resulting in an increased bonding strength.

Abstract: The present disclosure is directed at clathrate (Type I) allotropes of silicon, germanium and tin. In method form, the present disclosure is directed at methods for forming clathrate allotropes of silicon, germanium or tin which methods lead to the formation of empty cage structures suitable for use as electrodes in rechargeable type batteries.

Abstract: Compositions containing tin nanoparticles and electrically conductive particles are described herein. The tin nanoparticles can have a size below about 25 nm so as to make the compositions fusable at temperatures below that of bulk tin (m.p.=232° C.). Particularly, when the tin nanoparticles are less than about 10 nm in size, the compositions can have a fusion temperature of less than about 200° C. The compositions can contain a whisker suppressant to inhibit or substantially minimize the formation of tin whiskers after tin nanoparticle fusion. In some embodiments, the compositions contain tin nanoparticles, electrically conductive particles comprising copper particles, and a whisker suppressant comprising nickel particles. Methods for using the present compositions are also described herein. The present compositions can be used as a lead solder replacement that allows rework to be performed.

Abstract: A method is presented for fabricating an anode preloaded with consumable metals. The method provides a material (X), which may be one of the following materials: carbon, metals able to be electrochemically alloyed with a metal (Me), intercalation oxides, electrochemically active organic compounds, and combinations of the above-listed materials. The method loads the metal (Me) into the material (X). Typically, Me is an alkali metal, alkaline earth metal, or a combination of the two. As a result, the method forms a preloaded anode comprising Me/X for use in a battery comprising a M1YM2Z(CN)N·MH2O cathode, where M1 and M2 are transition metals. The method loads the metal (Me) into the material (X) using physical (mechanical) mixing, a chemical reaction, or an electrochemical reaction. Also provided is preloaded anode, preloaded with consumable metals.

Abstract: A method for producing a Sn based alloy (15) comprising a metal matrix of a metal matrix material, wherein the metal matrix material comprises Sn, and inclusions of a compound material, further referred to as compound inclusions, wherein the compound material contains one element or a combination of elements of the group Ti, V, Zr, Hf, further referred to as dopant, and one or a plurality of other elements, in particular Sn, Cu and/or Nb. Particles of the metal matrix material, further referred to as matrix particles, are mixed with particles of the compound material, further referred to as compound particles, and the matrix particles and the compound particles are compacted during and/or after their mixing. A Sn based alloy containing finer compound inclusion of a dopant can be prepared, in order to produce Nb3Sn superconductor material with a superior current carrying capacity.

Abstract: A glazing is disclosed comprising at least one ply of glass having an electrically conductive component on at least one surface, and an electrical connector electrically connected to the electrically conductive component through a soldered joint, the solder of the joint having a composition comprising 0.5 wt % or more indium, wherein the electrical connector comprises a nickel plated contact for contacting the solder. Also disclosed are solders having a composition comprising 14 to 75 wt % In, 14 to 75 wt % Sn, to 5 wt % Ag, to 5 wt % Ni, and less than 0.1 wt % Pb. Also disclosed is use of a solder having a composition comprising 0.5 wt % or more indium to solder a nickel plated electrical connector to an electrically conductive component on the surface of a ply of glass. The aspects of the invention improve the durability of electrical connections on glazing.

Abstract: A light emitting diode chip a support layer having a first face and a second face opposite the first face, a diode region on the first face of the support layer, and a bond pad on the second face of the support layer. The bond pad includes a gold-tin structure having a weight percentage of tin of 50% or more. The light emitting diode chip may include a plurality of active regions that are connected in electrical series on the light emitting diode chip.

Abstract: A negative electrode active material for an electric device includes an alloy containing Si in a range of greater than or equal to 27% by mass and less than 100% by mass, Sn in a range of greater than 0% by mass and less than or equal to 73% by mass, V in a range of greater than 0% by mass and less than or equal to 73% by mass, and inevitable impurities as a residue. The negative electrode active material can be obtained with, for example, a multi DC magnetron sputtering apparatus by use of Si, Sn, and V as targets. An electric device using the negative electrode active material can achieve long cycle life and ensure a high capacity and cycle durability.

Abstract: The present invention provides an electrode that can be used for a sodium secondary battery having a larger discharge capacity when charging and discharging are performed repeatedly than that of the prior art. This sodium secondary battery electrode contains tin (Sn) powder as an electrode active material. The electrode, particularly, further contains one or more electrode-forming agents selected from the group consisting of poly(vinylidene fluoride) (PVDF), poly(acrylic acid) (PAA), poly(sodium acrylate) (PAANa), and carboxymethylcellulose (CMC), thereby making it possible to provide a sodium secondary battery having even greater electrode performance.

Abstract: The present invention provides a lead-free solder composition for glass. The lead-free solder composition for glass includes indium, zinc, and tin. The indium (In) ranges from about 30.0 wt % to about 60 wt %. The zinc (Zn) ranges from about 0.01 wt % to about 11.0 wt %. The tin (Sn) is included as a remaining component.

Abstract: An alloy suitable for use in a ball grid array or chip scale package comprising from 0.05-1.5 wt. % copper, from 0.1-2 wt. % silver, from 0.005-0.3 wt % nickel, from 0.003-0.3 wt % chromium, from 0-0.1 wt. % phosphorus, from 0-0.1 wt. % germanium, from 0-0.1 wt. % gallium, from 0-0.3 wt. % of one or more rare earth elements, from 0-0.3 wt. % indium, from 0-0.3 wt. % magnesium, from 0-0.3 wt. % calcium, from 0-0.3 wt. % silicon, from 0-0.3 wt. % aluminum, from 0-0.3 wt. % zinc, from 0-2 wt. % bismuth, from 0-1 wt. % antimony, from 0-0.2 wt % manganese, from 0-0.3 wt % cobalt, from 0-0.3 wt % iron, and from 0-0.1 wt % zirconium, and the balance tin, together with unavoidable impurities.

Abstract: Energy-saving lamps contain a gas filling of mercury vapour and argon in a gas discharge bulb. Amalgam spheres are used for filling the gas discharge bulb with mercury. A tin amalgam having a high proportion by weight of mercury in the range from 30 to 70% by weight is proposed. Owing to the high mercury content, the amalgam spheres have liquid amalgam phases on the surface. Coating of the spheres with a tin or tin alloy powder converts the liquid amalgam phases on the surface into a solid amalgam having a high tin content. This prevents conglutination of the amalgam spheres during storage and processing.

Abstract: A lead-free solder alloy for a vehicle glass according to the present invention contains 26.0 to 56.0 mass % of In, 0.1 to 5.0 mass % of Ag, 0.002 to 0.05 mass % of Ti, 0.001 to 0.01 mass % of Si and the balance being Sn. The lead-free solder alloy may optionally contain 0.005 to 0.1 mass % of Cu and 0.001 to 0.01 mass % of B. This solder alloy can suitably be applied vehicle glasses and show good joint strength to glass materials and high acid resistance, salt water resistance and temperature cycle resistance.

Abstract: A tin-carbon compound that is a reaction product of tin and carbon, wherein the tin and the carbon form a single phase material that is meltable. The compound is one in which the carbon does not phase separate from the tin when the single phase material is heated to a melting temperature.

Abstract: To provide a solder alloy, a solder ball and an electronic member having a solder bump, used for connection with a mother board or the like, having a melting temperature of less than 250° C. for the solder alloy, achieving high drop impact resistance required in mobile devices or the like. A solder alloy is used which consists of not less than 0.1 mass ppm of boron and not greater than 200 mass ppm of boron and a remainder comprising substantially not less than 40% by mass of Sn, in which its melting temperature is less than 250° C.

Abstract: The invention relates to Sn—Cu—Ag alloy nanoparticles, preparation method thereof and ink or paste using the alloy nanoparticles in which the alloy nanoparticles are suitable for metal ink having excellent electrical conductivity or solder materials having low calcinating temperature.

Abstract: Tin and tin alloy deposits which are substantially free of certain crystal planes or equivalents thereof inhibit or prevent whisker formation. The tin or tin alloy deposits which are free of these crystal planes and inhibit or prevent whisker formation may be deposited by electroplating. Tin alloys include tin/copper, tin/nickel, tin/silver, tin/bismuth, tin/zinc and tin/antimony. The tin and tin alloy baths used to deposit the tin and tin alloys may be acidic or alkaline.

Abstract: The invention relates to methods of making articles of semiconducting material on a mold comprising semiconducting material and semiconducting material articles formed thereby, such as articles of semiconducting material that may be useful in making photovoltaic cells.

Abstract: Methods of the invention allow rapid production of high-porous, large-surface-area nanostructured metal and/or metal oxide at attractive low cost applicable to a wide variety of commercial applications such as sensors, catalysts and photovoltaics.

Abstract: A solder material can be used for fastening an outer electrode on a piezoelectric component. The solder material contains tin as the main constituent and at least one addition from the group of cobalt, tungsten, osmium, titanium, vanadium, iron and rare earth metals. A piezoelectric component includes such a solder material. The solder material is applied by means of a base metallization.

Abstract: Semiconductor packaging techniques are provided which optimize metallurgical properties of a joint using dissimilar solders. A solder composition for Controlled Collapse Chip Connection processing includes a combination of a tin based lead free solder component designed for a chip and a second solder component designed for a laminate. The total concentration of module Ag after reflow is less than 1.9% by weight. A method of manufacturing a solder component is also provided.

Abstract: The present invention provides a method of making a substantially phase pure compound including a cation and an anion. The compound is made by mixing in a ball-milling device a first amount of the anion with a first amount of the cation that is less than the stoichiometric amount of the cation, so that substantially all of the first amount of the cation is consumed. The compound is further made by mixing in a ball-milling device a second amount of the cation that is less than the stoichiometric amount of the cation with the mixture remaining in the device. The mixing is continued until substantially all of the second amount of the cation and any unreacted portion of anion X are consumed to afford the substantially phase pure compound.