Abstract: A method and apparatus for growing crystals of a more than three multicomponents compound semiconductor from its growth solution in which a source material containing at least one solute element is immersed and dissolved in the growth solution by conducting DC electric current from a current supplying electrode immersed in the growth solution through the growth solution to the source material, and thus a desired composition of the growth solution can be constantly maintained. As a result, the composition of the grown crystals of the multicomponents compound semiconductor can be also controlled to a desired proportion.

Abstract: Thermal degradation of compound single crystal substrates (e.g., InP) containing a relatively volatile element (e.g., P) prior to LPE growth has been virtually eliminated by an improved protection technique. A partial pressure of the volatile element is provided by a solution (e.g., Sn-In-P) localized inside a chamber which is external to the LPE boat and which surrounds substrate prior to growth, thereby preventing thermal damage to the substrate surface. Applicability of the technique to other epitaxial growth processes (e.g., VPE and MBE) is also discussed.

Abstract: The invention relates to a device useful when installed in a urinal for collection of urinary proteins. The adsorbent means includes a conduit for gravity feed passage of urine streams. The conduit has permeable layers in series containing a slow releasing antimicrobial agent and an adsorbent for urinary proteins such that for collection puropses wanted proteins are adsorbed without odor or loss due to bacterial degradation.

Abstract: A continuous-stream zeolite crystallization apparatus comprising a combination of a tubular reactor, a central stirring element contained therein, ingress and egress means for the reactor for charging crystalline zeolite forming reactants therein and recovering crystallized zeolites therefrom, respectively, recovery vessels for collecting and processing crystallized zeolites continuously, the reactor and recovery vessels optionally being subjected to a controlled pressure system.

Abstract: A method for performing successive mass production of identical semiconductor devices each having a multi-layer structure consisting of a plurality of epitaxial layers successively deposited on a substrate without requiring, for each deposition, any steps of cooling and re-heating a boat provided with a plurality of wells each containing a solution therein. An upper portion of each well is maintained at a predetermined temperature higher than that of a lower portion of the well which communicates with the upper portion so as to establish a constant temperature difference between the upper portion and the lower portion during the deposition of the epitaxial layers. A semiconductive solute material is soaked in the solution contained in the well to maintain the solution at a saturated concentration in the upper portion of the well and at a supersaturated concentration in the lower portion thereof.

Abstract: Process, centrifuge and installation for producing crystallization seeds, as for the sugar industry. A suspension of crystals produced from the seeded solution is subjected to a scheme of centrifugal separations whereby seeds falling within a predetermined size range are obtained for seeding the solution.