Abstract: Provided are a supported metal material showing high catalytic activity, a supported metal catalyst, a method of producing ammonia and a method of producing hydrogen using the supported metal catalyst, and a method of producing a cyanamide compound. The supported metal material of the present invention is a supported metal material in which a transition metal is supported on a support, and the support is a cyanamide compound represented by the following general formula (1): MCN2 (1), wherein M represents a group II element of the periodic table, and the specific surface area of the cyanamide compound is 1 m2 g?1 or more.

Abstract: Systems and methods for electrochemical ammonia synthesis comprise electrolytes which have greater efficiency than water, thus leading to cost reductions; and/or cathode catalysts which have lower costs and higher efficiencies in comparison to the iron/nickel catalysts noted above. The electrolyte may be composed primarily of a combination of non-aqueous hydrogen bond donors and acceptors, with high nitrogen solubility and high conductivity. The cathode catalyst may be composed of either a manganese-doped oxide or carbonate material or a two-dimensional carbide or nitride material.

Abstract: The present invention concerns an ammonia production method comprising the steps of: providing at least one rare earth nitride material or layer in a chamber; creating a vacuum or an inert atmosphere in the chamber; and providing hydrogen H2 to react with nitrogen N released at an external surface of the at least one rare earth nitride material or layer to produce ammonia.

Abstract: The purpose of the present invention is to provide a method for synthesizing ammonia and an apparatus for the method. The method for synthesizing ammonia according to the present invention comprises: a step of melting a metal containing at least an alkali metal; and a step of supplying a hydrogen gas and a nitrogen gas to the molten metal.

Abstract: The invention relates to a process for preparing trisilylamine and polysilazanes in the liquid phase, in which ammonia is introduced in a superstoichiometric amount relative to 5 monochlorosilane which is present in an inert solvent. Here, a reaction in which trisilylamine and polysilazanes are formed proceeds. TSA is subsequently separated off in gaseous form from the product mixture. The TSA obtained is purified by filtration and distillation and obtained in high or very high purity. The bottom product mixture is conveyed from the reactor through a filter unit in which solid ammonium chloride is separated off to give a liquid mixture of polysilazanes and solvent. This is fed to a further distillation to recover solvent. As a result of the NH3 being introduced in a superstoichiometric amount relative to monochlorosilane, monochlorosilane is completely reacted in the reactor.

Abstract: Ammonia is synthesized using electrochemical and non-electrochemical reactions. The electrochemical reactions occur in an electrolytic cell having a lithium ion conductive membrane that divides the electrochemical cell into an anolyte compartment and a catholyte compartment. The catholyte compartment includes a porous cathode closely associated with the lithium ion conductive membrane. The overall electrochemical reaction is: 6LiOH+N2?Li3N (s)+3H2O+3/2O2. The nitrogen may be produced by a nitrogen generator. The non-electrochemical reaction involves reacting lithium nitride with water and/or steam as follows: Li3N (s)+3H2O?3LiOH+NH3 (g). The ammonia is vented and collected. The lithium hydroxide is preferably recycled and introduced into the anolyte compartment. The electrolytic cell is shut down prior to reacting the lithium nitride with water. The cathode is preferably dried prior to start up of the electrolytic cell and electrolyzing Li+ and N2 at the cathode.

Abstract: Affords Group-III nitride single-crystal ingots and III-nitride single-crystal substrates manufactured utilizing the ingots, as well as methods of manufacturing III-nitride single-crystal ingots and methods of manufacturing III-nitride single-crystal substrates, wherein the incidence of cracking during length-extending growth is reduced. Characterized by including a step of etching the edge surface of a base substrate, and a step of epitaxially growing onto the base substrate hexagonal-system III-nitride monocrystal having crystallographic planes on its side surfaces. In order to reduce occurrences of cracking during length-extending growth of the ingot, depositing-out of polycrystal and out-of-plane oriented crystal onto the periphery of the monocrystal must be controlled.

Abstract: The present invention relates to a novel sulfonated carbon silica (SCS) composite material and a process for the preparation thereof. The synthesized SCS composite material on calcination yields the hierarchical mesoporous silica (MS) and further finds application as catalyst in two industrially important reactions namely phenol butylation and glycerol acetalization.

Abstract: A gas-barrier film comprising at least one silicon hydronitride layer and at least one silicon nitride layer on a surface of a flexible supporting substrate. The film has an excellent gas-barrier property.

Abstract: The present invention relates to a method for converting nitrogen (N2) into nitrate and/or ammonia comprising the steps of compressing air and separating nitrogen (N2) and oxygen (O2) therefrom, and either reacting earth alkaline metal with oxygen to produce earth alkaline metal oxide, using the high temperatures obtained to react N2 and O2 to NO, converting the NO with O2 to NO2, followed by the reaction of NO2 with water to result in HNO3 and NO; or reacting the nitrogen obtained with earth alkaline metal to produce earth alkaline metal nitride and reacting thereof with water to result in earth alkaline metal hydroxide and ammonia.

Abstract: A hydrogen production method includes: a first process in which nitrogen compounds of metal and water are reacted to produce ammonia and hydroxide of the metal; a second process in which hydrogen compounds of a metal and the ammonia produced in the first process are reacted; and a third process in which hydrogen compounds of a metal and the hydroxide of the metal produced in the first process are reacted.

Abstract: Proppants which can be used to prop open subterranean formation fractions are described. Proppant formulations which use one or more proppants of the present invention are described, as well as methods to prop open subterranean formation fractions, and other uses for the proppants and methods of making the proppants.

Abstract: A method for producing ammonia includes reacting SiO2 and/or Al2O3, or material containing SiO2 and/or Al2O3, with addition of a carbon source, with gaseous nitrogen at elevated temperature to give silicon nitride (Si3N4) and/or aluminum nitride (AlN), or material containing silicon nitride and/or aluminum nitride, and reacting resultant silicon nitride and/or aluminum nitride, or material containing silicon nitride and/or aluminum nitride, in the presence of a basic alkali metal compound and/or alkaline earth metal compound, with water at elevated temperature to give ammonia and alkali metal silicates and/or alkaline earth metal silicates.

Abstract: Systems and methods for producing ammonia. In one approach, Li3N is reacted with hydrogen to produce ammonia and is regenerated using nitrogen. Catalysts comprising selected transition metals or their nitrides can be used to promote the reactions. In another approach, supercritical anhydrous ammonia is used as a reaction medium to assist the reaction of hydrogen with nitrogen to produce ammonia, again promoted using catalysts.

Abstract: A method for forming ammonia is disclosed and which includes the steps of forming a plasma; providing a source of metal particles, and supplying the metal particles to the plasma to form metal nitride particles; and providing a substance, and reacting the metal nitride particles with the substance to produce ammonia, and an oxide byproduct.

Abstract: A sialon type phosphor in the form of a powder comprising at least 40 wt % of &agr;-sialon represented by the formula (Cax,My)(Si,Al)12(O,N)16 (where M is at least one metal selected from the group consisting of Eu, Tb, Yb and Er, 0.05<(x+y)<0.3, 0.02<x<0.27 and 0.03<y<0.3) and having a structure such that Ca sites of Ca-&agr;-sialon are partially substituted by other metal M, at most 40 wt % of &bgr;-sialon, and at most 30 wt % of unreacted silicon nitride.

Abstract: A ceramic bearing ball in which at least a portion of a constituent ceramic is formed of an electrically conductive inorganic compound phase, whereby a proper electrical conductivity is imparted to the ceramic. Thus, electrifying of a bearing ball is prevented or effectively suppressed. This prevents the problem involved in production of balls of small diameter wherein such balls adhere to an apparatus (e.g., a container) during production thereof, thus hindering smooth progress of the production process. In addition, when ceramic balls are used in precision electronic equipment, such as a hard disk drive of a computer, which is operated at high rotational speed, adhesion of foreign substance due to electrification of the balls, and resultant generation of abnormal noise or vibration can be prevented or effectively suppressed.

Abstract: An exhaust gas containing nitrides is treated by a process comprising: passing the exhaust gas containing nitrides through a microbe carrier packed layer while cyclically spraying circulating water onto the packed layer, thereby forming a water containing ammonia and conducting biological reactions in which ammonia is converted to nitrate; converting the nitrate in the water to nitrogen by a denitrification reaction; and recirculating the water which has been denitrified in the process, wherein nitration of ammonia is conducted by spraying the circulating water having a pH regulated to not more than 7.5 onto the microbe carrier packed layer.

Abstract: Nitride or oxidenitride based red to yellow pigments, such as tantalum(V) nitride and oxidenitrides containing tantalum may be produced by passing ammonia over nitridable metal compounds, in particular oxide compounds, at 700 to 1250° C. According to the invention, nitriding proceeds in a rotary tube or fluidised bed reactor in the presence of an oxide from the series SiO2, ZrO2, GeO2, SnO2, TiO2 and HfO2 under conditions under which this oxide is substantially not nitrided.

Abstract: High-packing silicon nitride powder having a tap density of at least about 0.9 g/cm.sup.3 is prepared by reacting a metallic silicon powder having a mean particle size of about 1 to 10 .mu.m, a BET specific surface area of about 1 to 5 m.sup.2 /g, and a purity of at least about 99% with nitrogen in a nitrogen atmosphere containing about 5 to 20% by volume of hydrogen at about 1,350 to 1,450.degree. C., and milling the resulting silicon nitride powder in a dry attritor. The powder is moldable into a compact having a density of at least about 1.70 g/cm.sup.3, from which a sintered part having improved dimensional precision and strength is obtained.

Abstract: A powder mixture of aluminium nitride in the form of sintered agglomerates with fractions of different particle size, which mixture comprises (1) 80 to 50% by weight of aluminium nitride in the form of sintered agglomerates having a mean particle diameter of 30 to 50 .mu.m, and (2) 20 to 50% by weight of aluminium nitride in the form of unsintered particles and having a mean particle diameter of 0.1 to 5 .mu.m. The mixture is suitable for use as filler for polymer materials, especially for casting resins, from which moulded parts of high thermal conductivity can be fabricated, for example potted electronic components.

Abstract: A sintered article is produced by mixing an intermetallic compound (binding phase) composed of at least one member selected from among carbides, nitrides, and borides of the elements of Groups 4a, 5a, and 6a in the Periodic Table of Elements and at least one element selected from among Al, Ni, Si, Co, Zr, and W with wBN, then mixing the resultant mixture with cBN and firing the produced mixture under a pressure exceeding 20 Kb at a temperature exceeding 1,000.degree. C. As a material for cutting tools, the sintered article is superior in quality to the conventional sintered article.

Abstract: A process for preparing a nitridable silicon-containing material, which process includes (a) comminuting a slurry of silicon powder, water, at least one densification aid, including Al.sub.2 O.sub.3, and another densification aid, the comminuting performed to cause substantial chemical reaction between the silicon and the water; and (b) reducing the water content of the reacted slurry to form a dry mass. In another embodiment, at least one nitriding agent may be added to aid any nitridation which may be performed.

Abstract: A method of preparing an organosilazane including reacting a first halosilane having the formula RR.sup.1 SiX.sub.2, wherein X is F, Cl, Br, or I, and each R and R.sup.1, independently, is X, H, or a lower alkyl group; a first primary amine compound having the formula R.sup.2 NH.sub.2, wherein R.sup.2 is H or a lower alkyl group; and a second primary amine compound having the formula R.sup.3 NH.sub.2, wherein R.sup.3 is H or a lower alkyl group, R.sup.3 being different from R.sup.2, to form the organosilazane.

Abstract: Ternary CaO-TiO.sub.2 -SiO.sub.2 compositions are discussed. These compositions are useful as sintering aids for silicon nitride sintering. Use of these ternary compositions allows silicon nitride to be effectively sintered at lower temperatures than when conventional yttria sintering aids are used.

Abstract: A body of sintered silicon nitride contains new non-glassy phases which produce significant X-ray diffraction peaks at 2-theta diffraction angles corresponding to d-spacings of about 2.86 Angstroms and 3.59 Angstroms and process for making same, which process includes (a) comminuting a slurry of a silicon-containing powder, water, about 0.1 to 5 volume percent of Fe.sub.2 O.sub.3, about 0.1 to 5 volume percent Al.sub.2 O.sub.3, and about 0.5 to 10 volume percent CeO.sub.2, wherein all volume percents are based on the volume of the resultant silicon nitride, the composition of the slurry being such that about a 4 to 12 volume percent liquid phase is achieved during sintering; (b) reducing the water content of the reacted slurry to form a dry mass; (c) nitriding the dry mass by exposure to a nitriding gas at an elevated temperature to form silicon nitride; and (d) sintering the silicon nitride at about 1450.degree.-2100.degree. C.

Abstract: A process for preparing a nitridable silicon-containing material, which process includes (a) comminuting a slurry of silicon powder, water, at least one densification aid, including Al.sub.2 O.sub.3, and another densification aid, the comminuting performed to cause substantial chemical reaction between the silicon and the water; and (b) reducing the water content of the reacted slurry to form a dry mass. In another embodiment, at least one nitriding agent may be added to aid any nitridation which may be performed.

Abstract: Silazanes and related compounds are prepared by providing a precursor containing one or more cyclic silazane units, causing polymerization to occur in the presence of a transition metal catalyst to form a polysilazane product. Further products may result from additional reaction. The novel compounds may be pyrolyzed to yield ceramic materials such as silicon nitride, silicon carbide and mixtures thereof. In a preferred embodiment, substantially pure silicon nitride and articles prepared therefrom are provided. Fibers, coatings, binders and the like may be prepared from the novel materials.

Abstract: There is disclosed a method for the treatment of aluminum dross oxides which contain aluminum metal, aluminum carbide, aluminum nitride and salts such as potassium and sodium chloride. The method comprises the thermal treatment of an aqueous suspension of the dross oxides with agitation in the presence of a particulate grinding medium. The method is practiced in a stirred reactor vessel which contains a bed of refractory, ceramic balls that are agitated with a slurry to provide a sufficient abrading action on the aluminum metal particles to remove the aluminum hydroxide coating and continually expose the aluminum metal for reaction with the water. This invention comprises the introduction of a purge gas into the suspension, preferably air, during its thermal treatment to reduce the formation of foam during the treatment and to assist in liberation of ammonia formed by the decomposition of the aluminum nitride.

Abstract: The oxynitride film according to the present invention contains Ga and/or Al and has O/N ratio of at least 0.15. This film is obtained by relying on, for example, chemical vapor deposition technique. The O/N ratio in the film may be varied by, for example, varying the distance between the substrate and the substance-supply source, or by varying the proportion of an oxidizing gas contained in a carrier gas. This film is used either as a surface passivation film of III-V compound semiconductors such as GaAs, or as an insulating film for active surface portions of IG-FET, or as an optical anti-reflective film.This is a division of application Ser. No. 215,442 filed Dec. 11, 1980, now Pat. 4,331,737, which in turn is a continuation of application Ser.No. 23,766, filed Mar. 26, 1979.