Abstract: Self-adaptive systems, uses of the systems, and methods for adapting one or more properties of a material are disclosed.

Abstract: A bulk acoustic resonator operable in a bulk acoustic mode includes a resonator body mounted to a separate carrier that is not part of the resonator body. The resonator body includes a piezoelectric layer, a device layer, and a top conductive layer on the piezoelectric layer opposite the device layer. The piezoelectric layer is a single crystal of LiNbO3 cut at an angle of 130°±30°. A surface of the device layer opposite the piezoelectric layer is for mounting the resonator body to the carrier.

Abstract: An inductive device includes an insulating layer, a lower magnetic layer, and an upper magnetic layer that are formed such that the insulating layer does not separate the lower magnetic layer and the upper magnetic layer at the outer edges or wings of the inductive device. The lower magnetic layer and the upper magnetic layer form a continuous magnetic layer around the insulating layer and the conductors of the inductive device. Magnetic leakage paths are provided by forming openings through the upper magnetic layer. The openings may be formed through the upper magnetic layer by semiconductor processes that have relatively higher precision and accuracy compared to semiconductor processes for forming the insulating layer such as spin coating. This reduces magnetic leakage path variation within the inductive device and from inductive device to inductive device.

Abstract: A one-step solution casting method for preparing a PVDF-based pyroelectric polymer film is provided, which belongs to the technical field of functional material preparation. The method comprises steps of: treating a substrate with a hydrophilic reagent to obtain a hydrophilically-modified substrate, and then casting the organic solution of polyvinylidene fluoride (PVDF) or its copolymer on the hydrophilically-modified substrate. After cured, the as-casted PVDF-based film shows pyroelectricity without undergoing any stretching or poling post-treatment, indicates that the dipoles of the one-step prepared film are aligned. The self-polarization of the prepared film is attributed to a hydrogen bond induced layer-by-layer electrostatic self-assembly growth mechanism. The method is simple, low cost, high efficient, high capability to produce thick and large-area film with smooth morphology and ease to be scalized.

Abstract: A method of producing a film including repeating a cycle comprised of an application step, a coat removal step and a sintering step N times (N?2), wherein relative to a liquid supply position in the (n)th (1?n?N?1) cycle coat removal step, a liquid supply position in the (n+1)th cycle coat removal step is the same or shifted in a direction approaching the center of a substrate for all n(s) and at the same time, shifted in a direction approaching the center of the substrate for at least one of the (n)s; or is the same or shifted in a direction away from the center of the substrate for all n(s) and at the same time, shifted in a direction away from the center of the substrate for at least one of the (n)s.

Abstract: The disclosure relates to an all-solid-state capacitor which has a high capacitance, is excellent in frequency characteristics, and can be made compact. An all-solid-state capacitor of the disclosure includes an inorganic solid electrolyte, and a pair of current collectors disposed so as to hold the inorganic solid electrolyte in between, the inorganic solid electrolyte having a main crystal phase of perovskite crystal structure that is expressed by a general formula, ABO3. A-site elements include two different elements, namely Li and M which is at least one of elements in Group 2 of the Periodic Table of Elements, and B-site elements include two different elements, namely Ti and M? which is at least one of elements in Group 5 of the Periodic Table of Elements.

Abstract: The present invention provides oxide particles having a compositional formula of Pb(ZrxTi1-x)O3, wherein x is 0.46?x?0.6; wherein a size of the particle is from 0.5 to 10 ?m; a porosity of a surface of the particle is 20% or less; and a shape of the particle is any one of a cube, a rectangular parallelepiped, or a truncated octahedron.

Abstract: The present invention provides, as a porous layer that can be used for a member for a nonaqueous secondary battery having excellent shutdown characteristics, a porous layer including a polyvinylidene fluoride-based resin, wherein, assuming that a sum of individual amounts of crystal form ? and crystal form ? contained in the polyvinylidene fluoride-based resin is 100 mol %, the amount of crystal form ? contained in the polyvinylidene fluoride-based resin is not less than 10 mol % and not more than 65 mol %.

Abstract: A bulk acoustic wave (BAW) resonator includes a substrate having a top side surface and a bottom side surface. A Bragg mirror is on the top side surface of the substrate. A bottom electrode layer is on the Bragg mirror, and a piezoelectric layer is on the bottom electrode layer. A top dielectric layer is on the piezoelectric layer, and a top electrode layer is on the top dielectric layer. The bottom side surface of the substrate has a surface roughness of at least 1 ?m root mean square (RMS).

Abstract: A piezoelectric thin film is manufactured by sequentially executing: a step of coating a substrate by applying a coating solution containing an organic solvent and a piezoelectric thin film precursor to form a coating layer; a step of evaporating the organic solvent from the coating layer in a windless environment to obtain a dried coating layer containing the piezoelectric thin film precursor; and a step of heating the dried coating layer to form a piezoelectric thin film from the dried coating layer containing the piezoelectric thin film precursor.

Abstract: A manufacturing method of an electromechanical transducing device includes forming a vibration plate on a substrate; forming a first electrode made of a metal on the vibration plate; forming a second electrode made of an electrically conductive oxide on the first electrode; coating a surface modification material and carrying out surface modification of only the first electrode; forming an electromechanical transducing film on the second electrode; and forming a third electrode made of an electrically conductive oxide on the electromechanical transducing film.

Abstract: A recessed portion is provided on a shorter side of a rectangular liquid supply passage. Thereby a flow pathway by the recessed portion can be ensured, and even in a case where the air bubble is trapped to be closer to and in contact with one end of the liquid supply passage, a difference in flow resistance to two ink flows generated in this state can be made small. In this way, the flow speeds of the inks flowing in the periphery of the air bubble can be made small as a whole, and as a result, it is possible to suppress an ejection failure due to transfer of the air bubble to the ejection opening side or the like.

Abstract: A deposition apparatus includes a deposition source that receives a deposition material, and a plurality of spray nozzles arranged in a first direction at one side of the deposition source to spray the deposition material to a facing substrate. The deposition source includes a center area and outer areas, the outer areas being at respective ends of the center area with reference to the first direction. The spray nozzles include first spray nozzles arranged in each outer area and extending outwardly from the deposition source, a surface forming an end of the first spray nozzles forming a first inclination angle with a substrate surface in the first direction.

Abstract: A vibration layer is formed by the AD method on a cavity plate before forming pressure chambers, a common electrode is formed on the vibration layer, and a piezoelectric layer is formed on the common electrode by the AD method. Subsequently, the pressure chambers are formed in the cavity plate by the etching. After that, individual electrodes are formed on the piezoelectric layer. Subsequently, the stack of the cavity plate, the vibration layer, the common electrode, the piezoelectric layer, and the individual electrodes is heated at about 850° C. to simultaneously perform the annealing of the piezoelectric layer and the sintering of the individual electrodes and the common electrode. Accordingly, the atoms of the cavity plate are suppressed from being diffused into the driving portions of the piezoelectric layer.

Abstract: A method for manufacturing a piezoelectric film includes: forming a piezoelectric precursor film including Bi, Fe, Mn, Ba, and Ti; and obtaining a piezoelectric film preferentially oriented with the (110) plane by crystallizing the piezoelectric precursor film.

Abstract: The present invention discloses a method of preparing a lead-free piezoelectric thin film comprising the steps of: providing a precursor solution comprising at least one alkali metal ion, a polyamino carboxylic acid, and an amine; depositing the precursor solution on a substrate to form a film; and annealing the film. The present invention also provides a lead-free piezoelectric thin film prepared according to the method, a precursor solution for use in the method and a method of preparing the precursor solution.

Abstract: Forming memristors on imaging devices can include forming a printhead body comprising a first conductive material, forming a memory on the printhead body by performing an oxidation process to form a switching oxide material on the first conductive material, and forming a second conductive material on the switching oxide material.

Abstract: An interactive card or the like employs a piezoelectric charge generator (piezo-strip) for temporarily driving an indicator. The piezo-strip may be displaced (bent) in order to generate charge to drive the indicator. Printed electronic processes are utilized to produce the indicator and/or the piezoelectric charge generator The need for a printed battery or supplemental power source is obviated. The card may carry printed indicia which corresponds to the states of the indicator (e.g., indication of a test answer selection). Multiple display elements and selector switches may provide multiple indicator states. Multiple piezo-strips may provide a selection function as well as a rest function. Applications include business cards, greeting cards and novelty items, toys and games, advertising and promotions, testing and education, sensors, and so forth.

Abstract: A process of forming an integrated circuit containing a piezoelectric thin film by forming a sol gel layer, drying in at least 1 percent relative humidity, baking starting between 100 and 225° C. increasing to between 275 and 425° C. over at least 2 minutes, and forming the piezoelectric thin film by baking the sol gel layer between 250 and 350° C. for at least 20 seconds, annealing between 650 and 750° C. for at least 60 seconds in an oxidizing ambient pressure between 700 and 1000 torr and a flow rate between 3 and 7 slm, followed by annealing between 650 and 750° C. for at least 20 seconds in a pressure between 4 and 10 torr and a flow rate of at least 5 slm, followed by ramping down the temperature.

Abstract: A composite substrate 10 includes a piezoelectric substrate 12 and a support layer 14 bonded to the piezoelectric substrate 12. The support layer 14 is made of a material having no crystalline anisotropy in a bonded surface thereof and has a smaller thickness than the piezoelectric substrate 12. The piezoelectric substrate 12 and the support layer 14 are bonded together with an adhesive layer 16 therebetween. The composite substrate 10 has a total thickness of 180 ?m or less. The base thickness ratio Tr=t2/(t1+t2) is 0.1 to 0.4, where t1 is the thickness of the piezoelectric substrate 12, and t2 is the thickness of the support layer 14. The thickness t1 is 100 ?m or less. The thickness t2 is 50 ?m or less.

Abstract: Provided is a piezoelectric material having a high Curie temperature and satisfactory piezoelectric characteristics, the piezoelectric material being represented by the following general formula (1): A(ZnxTi(1-x))yM(1-y)O3??(1) where A represents a Bi element, M represents at least one element selected from Fe, Al, Sc, Mn, Y, Ga, and Yb; x represents a numerical value of 0.4?x?0.6; and y represents a numerical value of 0.17?y?0.60.

Abstract: Multi-layered thin film piezoelectric material stacks and devices incorporating such stacks. In embodiments, an intervening material layer is disposed between two successive piezoelectric material layers in at least a portion of the area of a substrate over which the multi-layered piezoelectric material stack is disposed. The intervening material may serve one or more function within the stack including, but not limited to, inducing an electric field across one or both of the successive piezoelectric material layers, inducing a discontinuity in the microstructure between the two successive piezoelectric materials, modulating a cumulative stress of the piezoelectric material stack, and serving as a basis for varying the strength of an electric field as a function of location over the substrate.

Abstract: A method for producing a ferroelectric thin film comprising: coating a composition for forming a ferroelectric thin film on a base electrode of a substrate having a substrate body and the base electrode that has crystal faces oriented in the (111) direction, calcining the coated composition, and subsequently performing firing the coated composition to crystallize the coated composition, and thereby forming a ferroelectric thin film on the base electrode, wherein the method includes formation of an orientation controlling layer by coating the composition on the base electrode, calcining the coated composition, and firing the coated composition, where an amount of the composition coated on the base electrode is controlled such that a thickness of the orientation controlling layer after crystallization is in a range of 35 nm to 150 nm, and thereby controlling the preferential crystal orientation of the orientation controlling layer in the (100) plane.

Abstract: Matching layers improve the performance of ultrasonic transducers. Such layers have traditionally required significant effort and expense to be added to ultrasonic transducers. The present invention discloses a method of producing ultrasonic transducers with a matching layer, specifically for ultrasonic transducers utilizing piezopolymer transducer materials. Rather than the conventional method of forming the piezopolymer on a substrate and then attaching a matching layer through which the transducer emits its ultrasound energy, we teach depositing the piezopolymer on a substrate that also serves as a matching layer through which the ultrasound is emitted. We also teach depositing an additional shield layer for reducing electromagnetic interference. Methods of how to select materials and modify their ultrasonic characteristics are also discussed.

Abstract: A bulk acoustic wave (BAW) resonator is constructed to reduce phase and amplitude ripples in a frequency response. The BAW resonator is fabricated on a substrate 400 ?m thick or less, preferably approximately 325 ?m, having a first side and a polished second side with a peak-to-peak roughness of approximately 1000 A. A Bragg mirror having alternate layers of a high acoustic impedance material, such as tungsten, and a low acoustic impedance material is fabricated on the first side of the substrate. A BAW resonator is fabricated on the Bragg mirror. A lossy material, such as epoxy, coats the second side of the substrate opposite the first side. The lossy material has an acoustic impedance in the range of 0.01× to 1.0× the acoustic impedance of the layers of high acoustic impedance material.

Abstract: A method for producing a ferroelectric thin film comprising: coating a composition for forming a ferroelectric thin film on a base electrode of a substrate having a substrate body and the base electrode that has crystal daces oriented in the (111) direction, calcining the coated composition, and subsequently performing firing the coated composition to crystallize the coated composition, and thereby forming a ferroelectric thin film on the base electrode, wherein the method includes formation of an orientation controlling layer by coating the composition on the base electrode, calcining the coated composition, and firing the coated composition, where an amount of the composition coated on the base electrode is controlled such that a thickness of the orientation controlling layer after crystallization is in a range of 5 nm to 30 nm, and thereby controlling the preferential crystal orientation of the orientation controlling layer to be in the (110) plane.

Abstract: An elastic wave device includes a lithium niobate film, a supporting substrate, a high-acoustic-velocity film located on the supporting substrate and configured so that the acoustic velocity of a propagating bulk wave is higher than the acoustic velocity of an elastic wave that propagates on the lithium niobate film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and configured so that the acoustic velocity of the propagating bulk wave is lower than the acoustic velocity of the bulk wave that propagates in the lithium niobate film, the lithium niobate film being stacked on the low-acoustic-velocity film, and an IDT electrode located on either side of the lithium niobate film. When the lithium niobate film has Euler angles of (0°±5°, ?, 0°), ? is in the range of about 0° to about 8° and about 57° to about 180°.

Abstract: The microacoustic component has a substrate that has at least one layer (composed of a dielectric or piezoelectric material, and a metallic strip structure. The layer is composed of a dielectric or piezoelectric material and/or the metallic strip structure have/has been produced or can be produced by the atomic layer deposition method.

Abstract: An acoustic wave device includes a piezoelectric substrate, interdigitated electrodes formed on the piezoelectric substrate, and an insulation film that is formed on a surface of the interdigitated electrodes by atomic layer deposition and includes aluminum oxide.

Abstract: Fluidics-induced localized deposition and assembly of materials using a superhydrophobic surface structure is described. A method of localized deposition of a material includes contacting a superhydrophobic substrate comprising raised surface structures with a non-wetting fluid comprising a material to be locally deposited or a precursor thereto, said surface and said fluid selected such that the fluid wets only an upper portion of the raised surface structure; and allowing the material to deposit at the tips of the surface structure.

Abstract: A method of bonding a conductive material to stainless steel includes: a first step of applying a conductive paste to a surface of a base plate made of the stainless steel; and a second step of removing, in an area located within the surface of the base plate and covered with the conductive paste, a part of a passivation film on a surface of the stainless steel without allowing a base material of the stainless steel of the base plate to come into contact with air. The removing of the passivation film is achieved, for example, by irradiation of laser light.

Abstract: The invention relates to an electromechanical transducer device (2, 2.1, 2.2, 2.3, 2.4) comprising at least one layer composite (4, 4.1) disposed between a first electrode (6) and at least one second electrode (8). Said layer composite (4, 4.1) comprises a first electro-active layer (10) and at least one second electro-active layer (12), an electret material 14, 14.1) being provided, at least in sections, between the first electro-active layer (10) and the second electro-active layer (12), and the electret material (14) has an electric charge which can be predefined.

Abstract: This disclosure provides systems, methods and apparatus related to an ultrasonic receiver for detecting ultrasonic energy received at a first surface of the ultrasonic receiver. The ultrasonic receiver includes an array of pixel circuits disposed on a substrate, each pixel circuit in the array including at least one thin film transistor (TFT) element and having a pixel input electrode electrically coupled to the pixel circuit. The ultrasonic receiver is fabricated by forming a piezoelectric layer so as to be in electrical contact with the pixel input electrodes. Forming the piezoelectric layer includes coating a solution containing a polymer onto the array of pixel circuits, crystallizing the polymer to form a crystallized polymer layer and poling the crystallized polymer layer.

Abstract: A method for manufacturing a piezoelectric bulk acoustic wave element by forming a sacrificial layer on a part of a primary surface of a substrate. A piezoelectric film sandwiched between a pair of electrodes is formed on the primary surface of the substrate so as to cover the sacrificial layer, the piezoelectric film being formed from scandium-containing aluminum nitride having a scandium atomic concentration with respect to the total number of scandium atoms and aluminum atoms of more than 24 atomic percent. An etching step of removing the sacrificial layer by etching is performed. Prior to the etching step, a protective film formed from aluminum nitride or scandium-containing aluminum nitride having a lower scandium atomic concentration than that of the piezoelectric film is provided so as to cover at least a part of a portion of the piezoelectric film located in a region in which the sacrificial layer is provided.

Abstract: An electronic device includes a substrate; and a plurality of thin-film elements formed on the substrate. Further, the thin-film element includes a thin-film section having a function selected from a group including piezoelectric effect, inverse piezoelectric effect, charge storage, semiconductivity, and conductivity, and the plurality of thin-film elements includes the thin-film sections having two or more different functions.

Abstract: The present invention provides, among others, apparatus for detecting a disease, comprising a system delivery biological subject and a probing and detecting device, wherein the probing and detecting device includes a first micro-device and a first substrate supporting the first micro-device, the first micro-device contacts a biologic material to be detected and is capable of measuring at the microscopic level an electric, magnetic, electromagnetic, thermal, optical, acoustical, biological, chemical, physical, or mechanical property of the biologic material.

Abstract: This disclosure provides systems, methods and apparatus for microspeaker devices. In one aspect, a microspeaker element may include a deformable dielectric membrane that spans a speaker cavity. The deformable dielectric membrane can include a piezoactuator and a dielectric layer. Upon application of a driving signal to the piezoactuator, the dielectric layer can deflect, producing sound. In some implementations, an array of microspeaker elements can be encapsulated between a glass substrate and a cover glass. Sound generated by the microspeaker elements can be emitted through a speaker grill formed in the cover glass.

Abstract: A nanorod and a method of manufacturing the same are disclosed, and a nanorod including a ZnO nanorod; and a coating layer disposed on a ZnO surface and including RuO2 nanoparticles are disclosed concretely.

Abstract: Provided are methods and systems for forming piezoelectric coatings on power line cables using sol-gel materials. A cable may be fed through a container with a sol-gel material having a piezoelectric material to form an uncured layer on the surface of the cable. The layer is then cured using, for example, infrared, ultraviolet, and/or other types of radiation. The cable may be suspended in a coating system such that the uncured layer does not touch any components of the system until the layer is adequately cured. Piezoelectric characteristics of the cured layer may be tested in the system to provide a control feedback. The cured layer, which may be referred to as a piezoelectric coating, causes resistive heating at the outer surface of the cable during vibration of the cable due transmission of alternating currents and environmental factors.

Abstract: A manufacturing method for a liquid-discharge head substrate including a base material provided with an energy generating element that generates energy utilized for discharging liquid, a noble metal layer including noble metal provided on a surface of the base material on energy generating element side, and a material layer provided to come into contact with the noble metal layer. The manufacturing method includes preparing the base material on which the material layer is provided, oxidizing a part of a surface of the material layer by discharging electricity in oxygen-containing gas, and providing the noble metal layer on the base material.

Abstract: This LaNiO3 thin film-forming composition includes: LaNiO3 precursors; and acetic acid, wherein a ratio of an amount of the LaNiO3 precursors to 100 mass % of an amount of the LaNiO3 thin film-forming composition is in a range of 1 mass % to 20 mass % in terms of oxides, and the composition further includes a stabilizer containing N-methyl formamide in an amount of more than 0 mol to 10 mol or less per 1 mol of the total amount of the LaNiO3 precursors in the composition.

Abstract: Dramatic improvements in metallization integrity and electroceramic thin film performance can be achieved by the use of the ZnO buffer layer to minimize interfacial energy between metallization and adhesion layers. In particular, the invention provides a substrate metallization method utilizing a ZnO adhesion layer that has a high work of adhesion, which in turn enables processing under thermal budgets typically reserved for more exotic ceramic, single-crystal, or metal foil substrates. Embodiments of the present invention can be used in a broad range of applications beyond ferroelectric capacitors, including microelectromechanical systems, micro-printed heaters and sensors, and electrochemical energy storage, where integrity of metallized silicon to high temperatures is necessary.

Abstract: An electrostatically tunable magnetoelectric inductor including: a substrate; a piezoelectric layer; and a magnetoelectric structure comprising a first electrically conductive layer, a magnetic film layer, a second electrically conductive layer, and recesses formed so as to create at least one electrically conductive coil around the magnetic film layer; with a portion of the substrate removed so as to enhance deformation of the piezoelectric layer. Also disclosed is a method of making the same. This inductor displays a tunable inductance range of >5:1 while consuming less than 0.5 mJ of power in the process of tuning, does not require continual current to maintain tuning, and does not require complex mechanical components such as actuators or switches.

Abstract: A flow channel substrate has pressure chambers, and the pressure chambers communicate with nozzle openings configured to eject liquid. Each of piezoelectric elements on the flow channel substrate has a piezoelectric layer, a pair of electrodes, and a wiring layer coupled to the electrodes. The wiring layer has a first layer on the flow channel substrate side and a second layer on the first layer. The first layer contains palladium and is formed by pretreatment, whereas the second layer contains nickel and is formed by electroless plating.

Abstract: The present invention is related to a thin film fabrication of a rubber material with piezoelectric characteristics and a manufacturing method thereof. The present invention is developed by utilizing polymer casting, multilayer stacking, surface coating, and micro plasma discharge processes. To realize the desired electromechanical sensitivity, cellular PDMS structures with micrometer-sized voids are implanted with bipolar charges on the opposite inner surfaces. The implanted charge pairs function as dipoles, which respond promptly to diverse electromechanical simulation.

Abstract: A method for fabricating a piezoelectric multilayer are described. The method includes providing conductive layers. Alternating conductive layers are electrically connected. A first plurality of alternating conductive layers is electrically isolated from a second plurality of alternating conductive layers. Piezoelectric layers are interleaved with the conductive layers. Apertures are provided in the piezoelectric layers. A first conductive plug electrically connects the first plurality of alternating conductive layers, includes a first plurality of segments, and is in apertures in the piezoelectric layers. Each of the first plurality of segments extends through one of the piezoelectric layers. A second conductive plug electrically connects the second plurality of alternating conductive layers, includes a second plurality of segments, and is in a second portion of the plurality of apertures. Each of the second plurality of segments extends through one of the plurality of piezoelectric layers.

Abstract: A LaNiO3 thin film having extremely few voids is uniformly formed. Provided is a LaNiO3 thin film-forming composition for forming a LaNiO3 thin film. It includes: a LaNiO3 precursor; a first organic solvent; a stabilizer; and a second organic solvent. The first organic solvent includes carboxylic acids, alcohols, esters, ketones, ethers, cycloalkanes, aromatic compounds, or tetrahydrofuran. The stabilizer includes ?-diketones, ?-ketones, ?-keto esters, oxyacids, diols, triols, carboxylic acids, alkanolamines, or polyvalent amines. The second organic solvent has a boiling point of 150° C. to 300° C. and a surface tension of 20 to 50 dyn/cm. The LaNiO3 precursor content is 1 to 20 mass % with respect to 100 mass % of the composition. The stabilizer content is 0 to 10 mol with respect to 1 mol of a total amount of the LaNiO3 precursors. The second organic solvent content is 5 to 20 mass % with respect to the composition.

Abstract: In a method for manufacturing a piezoelectric device, a silicon oxide film is deposited by sputtering on a surface of a single-crystal piezoelectric substrate closer to an ion-implanted region, and a silicon nitride film is deposited by sputtering on a surface of the dielectric film opposite to a side thereof closer to the single-crystal piezoelectric substrate. The silicon oxide film has a composition that is deficient in oxygen relative to the stoichiometric composition. Accordingly, little oxygen is supplied from the silicon oxide film to the piezoelectric thin film during heat treatment of a piezoelectric device. This prevents oxidation of the piezoelectric thin film and therefore formation of an oxide layer with high resistivity in the piezoelectric thin film. As a result, a pyroelectric charge generated in the piezoelectric thin film can flow to the silicon oxide film.

Abstract: Disclosed is a composition for ferroelectric thin film formation which is used in the formation of a ferroelectric thin film of one material selected from the group consisting of PLZT, PZT, and PT. The composition for ferroelectric thin film formation is a liquid composition for the formation of a thin film of a mixed composite metal oxide formed of a mixture of a composite metal oxide (A) represented by general formula (1): (PbxLay)(ZrzTi(1?z))O3 [wherein 0.9<x<1.3, 0?y?0.1, and 0?z?0.9 are satisfied] with a composite oxide (B) or a carboxylic acid (B) represented by general formula (2): CnH2n+1COOH [wherein 3?n?7 is satisfied]. The composite oxide (B) contains one or at least two elements selected from the group consisting of P (phosphorus), Si, Ce, and Bi and one or at least two elements selected from the group consisting of Sn, Sm, Nd, and Y (yttrium).

Abstract: Provided are a resonator and a method of fabricating the same. The resonator may include a first electrode disposed on a substrate, a piezoelectric layer disposed on the first electrode, a second electrode disposed on the piezoelectric layer, and a control layer disposed on the second electrode and having a frame with an uneven surface.