Carbon Base Patents (Class 427/113)
  • Patent number: 4103046
    Abstract: In a method of impregnating carbon electrodes, a step of heating and drying carbon electrodes is separately juxtaposed to a step of pitch impregnation and cooling so that respective palettes are transported on separate courses for the respective steps, and at a position where said courses approach each other, the electrodes are transferred from a palette for said heating and drying step to a palette for said impregnation and cooling step so that the palette in the step of impregnation and cooling does not pass through a heating and drying furnace in the other step.
    Type: Grant
    Filed: November 16, 1976
    Date of Patent: July 25, 1978
    Assignees: Nikku Industry Co., Ltd., Nippon Carbon Co., Ltd.
    Inventor: Toru Taniguchi
  • Patent number: 4077818
    Abstract: Low-cost polycrystalline silicon solar cells supported on substrates are prepared by depositing successive layers of polycrystalline silicon containing appropriate dopants over supporting substrates of a member selected from the group consisting of metallurgical-grade polycrystalline silicon, graphite and steel coated with a diffusion barrier of silica, borosilicate, phosphosilicate, or mixtures thereof such that p-n junction devices are formed which effectively convert solar energy to electrical energy. To improve the conversion efficiency of the polycrystalline silicon solar cells, the crystallite size in the silicon is substantially increased by melting and solidifying a base layer of polycrystalline silicon before depositing the layers which form the p-n junction.
    Type: Grant
    Filed: June 4, 1976
    Date of Patent: March 7, 1978
    Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space Administration
    Inventor: Ting L. Chu
  • Patent number: 4075114
    Abstract: A process for producing flexible graphite material comprises incorporating expanded graphite material with boric acid, compression molding the resulting mixture and, if desired, heating the resulting molding while under compression. This invention also relates to the flexible graphite material produced by the process.
    Type: Grant
    Filed: March 12, 1976
    Date of Patent: February 21, 1978
    Assignee: Nippon Carbon Co., Ltd.
    Inventors: Toshikatsu Ishikawa, Tanaka Junichi, Haruo Teranishi, Shinichiro Kondo
  • Patent number: 4029829
    Abstract: The invention provides a more economical carbon-fiber-reinforced carbon surfaced friction member, such as a brake disc, by replacing a disc which is of fiber-reinforced carbon throughout its thickness by a disc in which a fiber-reinforced surface layer is bonded to a base of a less expensive material, such as bulk graphite. A textile may be applied to the base and carbonized and carbon deposited on the textile layer by the multiple impregnation process or the chemical vapor deposition process. In the latter process the base is preferably heated above the temperature of the textile layer, e.g. by electrical induction or resistance, to obtain carbon deposition from the base outward through the textile layer.
    Type: Grant
    Filed: January 27, 1975
    Date of Patent: June 14, 1977
    Assignee: Dunlop Limited
    Inventors: John Victor Weaver, Ronald Fisher
  • Patent number: 4003770
    Abstract: Polycrystalline silicon films useful in preparing solar cells primarily for terrestrial application are prepared by a plasma spraying process. A doped silicon powder is injected into a high temperature ionized gas (plasma) to become molten and to be sprayed onto a low-cost substrate. Upon cooling, a dense polycrystalline silicon film is obtained. A p-n junction is formed on the sprayed film by spray deposition, diffusion or ion implantation. A sprayed junction is produced by plasma spraying a thin layer of silicon of opposite polarity or type over the initially deposited doped film. In forming a diffused junction, dopant is applied over the surface of the initial plasma-sprayed film usually from the vapor phase and heat is used to cause the dopant to diffuse into the film to form a shallow layer of opposite polarity to that in the original film. A junction is also formed by implanting dopant ions in the surface of the originally deposited film by the use of electrical fields.
    Type: Grant
    Filed: March 24, 1975
    Date of Patent: January 18, 1977
    Assignee: Monsanto Research Corporation
    Inventors: Richard J. Janowiecki, Michael C. Willson, Douglas H. Harris
  • Patent number: 3996408
    Abstract: The present invention relates to heavy-current electrical engineering, and more particularly to carbon-graphite brushes characterized by high wear resistance and low adhesive capacity of the brush dust, said brushes being intended for operation in commutator machines under moderate or heavy commutation conditions at an operating temperature of the sliding contact from 200.degree. to 250.degree. C, and to a method for manufacturing same.Carbon-graphite brushes for electric machines are made of a material which, after impregnation and heat treatment of the organic impregnation compound contains a dry residue evenly distributed through out the entire bulk volume thereof, the dry residue being a mixture of melamine-glyptal resin with a metal linoleate, in a polymerized state.
    Type: Grant
    Filed: February 28, 1975
    Date of Patent: December 7, 1976
    Inventors: Georgy Nikolaevich Fridman, Jury Nikolaevich Vasiliev, Abram Samoilovich Fialkov, Yakov Gilievich Davidovich, Abram Yakovlevich Gluskin, Anatoly Alexandrovich Kozyrev, Roza Petrovna Batyreva, Evgeny Mikhailovich Kozlov, Anatoly Alexeevich Boiko, Olga Borisovna Kazakova, Nadezhda Vasilievna Kalinina, Valentina Mikhailovna Emelyanova, Igor Vyacheslavovich Yartsev
  • Patent number: 3969163
    Abstract: The disclosure relates to a method of upgrading metallurgical grade silicon to semiconductor grade for making low cost silicon devices and particularly solar cells. This is accomplished by passing conductive fibers such as graphite or the like which are compatible with the later processing steps through an area which is cooled below 700.degree. C and which contains silicon difluoride and a proper N-type dopant. At these temperatures, the silicon difluoride gas will break down into pure silicon which will deposit onto the fiber with the formation of silicon tetrafluoride gas which is then recycled into a further chamber. In the further chamber, the gaseous silicon tetrafluoride is mixed with the impure metallurgical grade silicon at temperatures above 700.degree. C to form the silicon difluoride gas which is then fed into the former chamber for deposition of pure silicon onto the continuously moving fibers of graphite or the like.
    Type: Grant
    Filed: September 19, 1974
    Date of Patent: July 13, 1976
    Assignee: Texas Instruments Incorporated
    Inventor: Gene Felix Wakefield
  • Patent number: 3961997
    Abstract: Low-cost polycrystalline silicon cells supported on substrates are prepared by depositing successive layers of polycrystalline silicon containing appropriate dopants over supporting substrates of a member selected from the group consisting of metallurgical-grade polycrystalline silicon, graphite and steel coated with a diffusion barrier of silica, borosilicate, phosphosilicate, or mixtures thereof such that p-n junction devices are formed which effectively convert solar energy to electrical energy.
    Type: Grant
    Filed: May 12, 1975
    Date of Patent: June 8, 1976
    Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space Administration
    Inventor: Ting L. Chu
  • Patent number: 3956562
    Abstract: An electrostatic recording material having excellent recording characteristics is obtained by coating an electrically conductive substrate with a coating composition comprising an insulating polymer and pigment particles on which is adsorbed a fatty acid having at least five carbon atoms, ester or salt thereof, or resin acid or salt thereof.
    Type: Grant
    Filed: March 5, 1974
    Date of Patent: May 11, 1976
    Assignee: Kanzaki Paper Manufacturing Co., Ltd.
    Inventors: Kazuo Shibata, Tadashi Tanimoto
  • Patent number: 3941899
    Abstract: A method of applying to an anode for use in fusion electrolysis a coating for protection of the anode against surrounding influences, comprising delivering the material of the coating in finely dispersed form onto the anode with sufficient heat content and impact energy to cause adhesion between the material and the surface of the anode and consolidation of the material. Preferably the material is applied by means of a plasma burner and, for an anode to be used for the electrolytic production of aluminium, includes aluminium oxide and facultatively aluminium, the thickness of the coating beeing about 0.1 to 1.0 mm.
    Type: Grant
    Filed: November 15, 1972
    Date of Patent: March 2, 1976
    Assignee: Swiss Aluminium Ltd.
    Inventors: Tibor Kugler, Hans Wolfhart Rieger
  • Patent number: 3939028
    Abstract: Carbon articles, particularly carbon electrodes, are protected against corrosive attack in use by fusing material to the article, or applying material to the carbon article which under the conditions of its use is capable of fusing to the carbon article, to form a coherent coating of protective material over only that part of the carbon article liable to corrosive attack when the article is in use.
    Type: Grant
    Filed: October 29, 1974
    Date of Patent: February 17, 1976
    Assignee: Foseco International Limited
    Inventors: Josef Schiffarth, Clive Graham Lorkin, Kenneth John Fletcher