Superconductor Patents (Class 427/62)
  • Patent number: 10177297
    Abstract: The present disclosure relates to semiconductor based Josephson junctions and their applications within the field of quantum computing, in particular a tuneable Josephson junction device has been used to construct a gateable transmon qubit. One embodiment relates to a Josephson junction comprising an elongated hybrid nanostructure comprising superconductor and semiconductor materials and a weak link, wherein the weak link is formed by a semiconductor segment of the elongated hybrid nanostructure wherein the superconductor material has been removed to provide a semiconductor weak link.
    Type: Grant
    Filed: March 4, 2015
    Date of Patent: January 8, 2019
    Assignee: University of Copenhagen
    Inventors: Charles M. Marcus, Peter Krogstrup, Thomas Sand Jespersen, Jesper Nygård, Karl Petersson, Thorvald Larsen, Ferdinand Kuemmeth
  • Patent number: 9960374
    Abstract: The present invention provides a stripping method of a flexible substrate, comprising: providing a porous metal substrate; forming a buffer layer on the porous metal substrate; forming a flexible substrate on the buffer layer; putting the flexible substrate in the electrolytic tank so that the part of the porous metal substrate is immersed in the electrolyte, and the porous metal substrate is employed to be a cathode electrified to electrolyze water in the electrolyte, and the porous metal substrate will releases the hydrogen, and the flexible substrate and the buffer layer are stripped from the porous metal substrate with the acting force of the hydrogen to obtain the flexible substrate with the buffer layer at the bottom. The method is high efficient and without damaging to promote the production yield of the flexible substrate.
    Type: Grant
    Filed: May 13, 2016
    Date of Patent: May 1, 2018
    Assignee: WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventor: Hong Fang
  • Patent number: 9812233
    Abstract: A superconducting oxide thin film includes a superconducting layer formed on a supporting material. The superconducting layer includes an RE-based superconductor as a main component, and the RE-based superconductor includes a CuO chain that has a Cu vacancy portion.
    Type: Grant
    Filed: October 29, 2013
    Date of Patent: November 7, 2017
    Assignee: FURUKAWA ELECTRIC CO., LTD.
    Inventors: Hirokazu Sasaki, Hajime Kasahara, Kengo Nakao, Masakazu Matsui
  • Patent number: 9741919
    Abstract: A nano-scale superconducting quantum interference device and a manufacturing method thereof, comprising the following steps of: S1: providing a substrate and growing a first superconducting material layer thereon; S2: forming a photo-resist layer and performing patterning; S3: etching the first superconducting material layer in a predetermined region; S4: covering a layer of insulation material on a top and a side of a structure obtained in step S3; S5: growing a second superconducting material layer; S6: removing the structure above the plane where the upper surface of the first superconducting material layer locates, to obtain a plane superconducting structure, in the middle of which at least one insulating interlayer is inserted; S7: forming at least one nanowire vertical to the insulating interlayer, to obtain the nano-scale superconducting quantum interference device. The width of the superconducting ring and the length of the nano junction are determined by the insulating interlayer.
    Type: Grant
    Filed: April 8, 2014
    Date of Patent: August 22, 2017
    Assignee: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCE
    Inventors: Lei Chen, Zhen Wang
  • Patent number: 9601750
    Abstract: A surface-treated electrode active material, a method of surface treating an electrode active material, an electrode, and a lithium secondary battery. The surface-treated electrode active material includes a surface metal oxide layer having higher degree of reduction of a metal than that of a bulk metal oxide layer. The method includes: forming a mixture by adding an untreated electrode active material comprising a metal oxide, and at least one of a basic material and a reducing material to a solvent; and stirring the mixture.
    Type: Grant
    Filed: August 10, 2012
    Date of Patent: March 21, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Yoon-sok Kang, Jun-young Mun, Jin-hwan Park, Min-sik Park, Seung-mo Oh, Tae-ho Yoon
  • Patent number: 9362476
    Abstract: A method of forming a superconductive device of a single layer of (BETS)2GaCl4 molecules on a substrate surface which displays a superconducting gap that increases exponentially with the length of the molecular chain is provided.
    Type: Grant
    Filed: August 24, 2012
    Date of Patent: June 7, 2016
    Assignee: Ohio University
    Inventors: Saw Wai Hla, Abdelrahim Hassanien, Kendal Clark
  • Patent number: 9059371
    Abstract: The present invention concerns the enhancement of critical current densities in cuprate superconductors. Such enhancement of critical current densities include using wave function symmetry and restricting movement of Abrikosov (A) vortices, Josephson (J) vortices, or Abrikosov-Josephson (A-J) vortices by using the half integer vortices associated with d-wave symmetry present in the grain boundary.
    Type: Grant
    Filed: June 8, 2011
    Date of Patent: June 16, 2015
    Assignee: Solar-Tectic LLC
    Inventors: Karin Chaudhari, Ashok Chaudhari, Pia Chaudhari
  • Patent number: 9023764
    Abstract: According to one embodiment, an oxide superconductor includes an oriented superconductor layer and an oxide layer. The oriented superconductor layer contains fluorine at 2.0×1016-5.0×1019 atoms/cc and carbon at 1.0×1018-5.0×1020 atoms/cc. The superconductor layer contains in 90% or more a portion oriented along c-axis with an in-plane orientation degree (??) of 10 degrees or less, and contains a LnBa2Cu3O7-x superconductor material (Ln being yttrium or a lanthanoid except cerium, praseodymium, promethium, and lutetium). The oxide layer is provided in contact with a lower surface of the superconductor layer and oriented with an in-plane orientation degree (??) of 10 degrees or less with respect to one crystal axis of the superconductor layer. Area of a portion of the lower surface of the superconductor layer in contact with the oxide layer is 0.3 or less of area of a region directly below the superconductor layer.
    Type: Grant
    Filed: February 14, 2013
    Date of Patent: May 5, 2015
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Takeshi Araki, Mariko Hayashi, Ko Yamada, Hiroyuki Fuke
  • Publication number: 20150105261
    Abstract: An oxide superconducting thin film wherein nanoparticles functioning as flux pins are dispersed in the film is provided. The oxide superconducting thin film wherein the nanoparticles in the oxide superconducting thin film have a dispersing density of 1020 particles/m3 to 1024 particles/m3 is provided. The oxide superconducting thin film wherein the nanoparticles have a particle diameter of 5 nm to 100 nm is provided. A method of manufacturing an oxide superconducting thin film wherein a predetermined amount of a solution obtained by dissolving nanoparticles functioning as flux pins in a solvent is added to a solution obtained by dissolving an organometallic compound in a solvent to prepare a source material solution for an oxide superconducting thin film, and the source material solution is used to manufacture the oxide superconducting thin film through a coating-pyrolysis process is provided.
    Type: Application
    Filed: May 31, 2012
    Publication date: April 16, 2015
    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Tatsuoki Nagaishi, Genki Honda, Iwao Yamaguchi, Takaaki Manabe, Takeshi Hikata, Hiroaki Matsui, Wakichi Kondo, Hirofumi Yamasaki, Toshiya Kumagai
  • Publication number: 20150099641
    Abstract: The present invention provides a method for manufacturing an electrode of a lithium battery electrode, comprising: (a) providing a substrate; (b) coating a paste on a portion of the substrate; (c) plating a metal film onto the paste or the substrate; (d) disposing a welding point at an end of the substrate; wherein the advantages of the present invention are to conduct current in three-dimensional direction and reduce the problem of electric conductivity because of thermal effect. In addition, the present invention can further avoid the problem of the electrode oxidation.
    Type: Application
    Filed: April 10, 2014
    Publication date: April 9, 2015
    Inventor: Christine Jill LEE
  • Patent number: 8993064
    Abstract: Provided are a substrate for a superconducting compound and a method for manufacturing the substrate which can realize the excellent adhesive strength simultaneously with high orientation of copper. An absorbed material on a surface of a copper foil to which rolling is applied at a draft of 90% or more is removed by applying sputter etching to the surface of the copper foil, sputter etching is applied to a nonmagnetic metal sheet, the copper foil and the metal sheet are bonded to each other by applying a pressure to the copper foil and the metal sheet using reduction rolls, crystals of the copper in the copper foil are oriented by heating a laminated body formed by such bonding, copper is diffused into the metal sheet by heating with a copper diffusion distance of 10 nm or more, and a protective layer is laminated to a surface of the copper foil of the laminated body.
    Type: Grant
    Filed: November 12, 2010
    Date of Patent: March 31, 2015
    Assignees: Toyo Kohan Co., Ltd., Sumitomo Electric Industries, Ltd.
    Inventors: Hironao Okayama, Kouji Nanbu, Akira Kaneko, Hajime Ota, Kotaro Ohki, Takashi Yamaguchi, Kazuhiko Hayashi, Kazuya Ohmatsu
  • Patent number: 8980797
    Abstract: A method for manufacturing a base material 2 for a superconductive conductor which includes: a conductive bed layer forming process of forming a non-oriented bed layer 24 having conductivity on a substrate 10; and a biaxially oriented layer forming process of forming a biaxially oriented layer 26 on the bed layer 24.
    Type: Grant
    Filed: August 24, 2012
    Date of Patent: March 17, 2015
    Assignee: Furukawa Electric Co., Ltd.
    Inventors: Yoshikazu Okuno, Hiroyuki Fukushima, Yuko Hayase, Eiji Kojima
  • Publication number: 20150072863
    Abstract: Known processes for the production of nanoparticles of compounds of the transition metals Zr, Ti, Ta, rare earths (RE), Mn, and Fe via microemulsions lead to products that contain impurities from the reactants, particularly water, which make the further use of said nanoparticles difficult, for instance in high-temperature super conductors (HTSC). It is proposed that the nanoparticles be produced via anhydrous microemulsions having an outer phase composed of a nonpolar solvent and inner phase composed of a polar anhydrous solvent. The nanoparticles thus obtained exhibit good monodispersity and can be used in the production of REBa2Cu3O7 super conductors by incorporation into the precursor coating solution.
    Type: Application
    Filed: March 20, 2013
    Publication date: March 12, 2015
    Applicant: BASF SE
    Inventors: Thomas Freudenberg, Bernhard Holzapfel, Oliver Brunkahl, Michael Baecker
  • Publication number: 20150065351
    Abstract: In one embodiment a superconductor tape includes a substrate comprising a plurality of layers, an oriented superconductor layer disposed on the substrate, and an alloy coating disposed upon the superconductor layer, the alloy coating comprising one or more metallic layers in which at least one metallic layer comprises a metal alloy.
    Type: Application
    Filed: August 29, 2013
    Publication date: March 5, 2015
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Connie P. Wang, Paul Sullivan, Paul Murphy, Kasegn D. Tekletsadik, Bharatwaj Ramakrishnan
  • Patent number: 8965469
    Abstract: Disclosed are an oxide superconductor tape and a method of manufacturing the oxide superconductor tape capable of improving the length and characteristics of superconductor tape and obtaining stabilized characteristics across the entire length thereof. A Y-class superconductor tape (10), as an oxide superconductor tape, comprises a tape (13) further comprising a tape-shaped non-oriented metallic substrate (11), and a first buffer layer (sheet layer) (12) that is formed by IBAD upon the tape-shaped non-oriented metallic substrate (11); and a second buffer layer (gap layer) (14), further comprising a lateral face portion (14a) that is extended to the lateral faces of the first buffer layer (sheet layer) (12) upon the tape (13) by RTR RF-magnetron sputtering.
    Type: Grant
    Filed: February 10, 2011
    Date of Patent: February 24, 2015
    Assignee: SWCC Show Cable Systems Co., Ltd.
    Inventors: Tatsuhisa Nakanishi, Yuji Aoki, Tsutomu Koizumi, Atsushi Kaneko, Takayo Hasegawa
  • Publication number: 20150051080
    Abstract: The films of this invention are high temperature superconducting (HTS) thin films specifically optimized for microwave and RF applications. In particular, this invention focuses on compositions with a significant deviation from the 1:2:3 stoichiometry in order to create the films optimized for microwave/RF applications. The RF/microwave HTS applications require the HTS thin films to have superior microwave properties, specifically low surface resistance, Rs, and highly linear surface reactance, Xs, i.e. high JIMD. As such, the invention is characterized in terms of its physical composition, surface morphology, superconducting properties, and performance characteristics of microwave circuits made from these films.
    Type: Application
    Filed: April 17, 2014
    Publication date: February 19, 2015
    Inventors: BRIAN MOECKLY, VIKTOR GLIANTSEV, SHING-JEN PENG, BALAM WILLEMSEN
  • Publication number: 20150045231
    Abstract: There is described herein a superconducting segment and method of making same comprising one or several layers with very high electrical resistivity, acting as a current flow diverter when the current transfers from the superconductor to the stabilizer. The purpose of this current flow diverter is: i) to increase the contact resistance between the superconductor and the stabilizer, by reducing the contact area, and ii) to force the current to flow along a specific path, so as to increase momentarily the current density in a specific portion of the stabilizer. The consequence of i) and ii) is that heat generated at the extremities of the normal zone is increased and spread over a longer length along the superconducting segment, which increases the NZPV and thus, the uniformity of the quench.
    Type: Application
    Filed: February 1, 2013
    Publication date: February 12, 2015
    Inventors: Christian Lacroix, Frederic Sirois, Michael Robert Wertheimer
  • Patent number: 8954125
    Abstract: Low-loss superconducting devices and methods for fabricating low loss superconducting devices. For example, superconducting devices, such as superconducting resonator devices, are formed with a (200)-oriented texture titanium nitride (TiN) layer to provide high Q, low loss resonator structures particularly suitable for application to radio-frequency (RF) and/or microwave superconducting resonators, such as coplanar waveguide superconducting resonators. In one aspect, a method of forming a superconducting device includes forming a silicon nitride (SiN) seed layer on a substrate, and forming a (200)-oriented texture titanium nitride (TiN) layer on the SiN seed layer.
    Type: Grant
    Filed: July 28, 2011
    Date of Patent: February 10, 2015
    Assignees: International Business Machines Corporation, The United States of America, as represented by the Secretary of Commerce, The National Institute of Standards
    Inventors: Antonio D. Corcoles Gonzalez, Jiansong Gao, Dustin A. Hite, George A. Keefe, David P. Pappas, Mary E. Rothwell, Matthias Steffen, Chang C. Tsuei, Michael R. Vissers, David S. Wisbey
  • Publication number: 20150038334
    Abstract: A tape-shaped superconducting film-forming substrate is disclosed, which includes a film-forming face for forming a laminate including a superconducting layer thereon, a rear face that is a face at a side opposite to the film-forming face, a pair of end faces connected to the film-forming face and the rear face, and a pair of side faces connected to the film-forming face, the rear face, and the pair of end faces, in which each of the pair of side faces includes a spreading face that spreads toward an outer side in an in-plane direction of the film-forming face from an edge part of the film-forming face toward the rear face side. A superconducting wire and a superconducting wire manufacturing method are also disclosed.
    Type: Application
    Filed: February 6, 2013
    Publication date: February 5, 2015
    Inventors: Yoshinori Nagasu, Masaru Higuchi, Hisaki Sakamoto
  • Patent number: 8927461
    Abstract: Provided is a substrate for superconductive film formation, which includes a metal substrate, and an oxide layer formed directly on the metal substrate, containing chromium oxide as a major component and having a thickness of 10-300 nm and an arithmetic average roughness Ra of not more than 50 nm. A method of manufacturing a substrate for superconductive film formation, which includes forming an oxide layer directly on a metal substrate, the oxide layer containing chromium oxide as a major component and having a thickness of 10-300 nm and an arithmetic average roughness Ra of not more than 50 nm.
    Type: Grant
    Filed: May 20, 2011
    Date of Patent: January 6, 2015
    Assignees: International Superconductivity Technology Center, Furukawa Electric Co., Ltd., Japan Fine Ceramics Center
    Inventors: Seiki Miyata, Hiroyuki Fukushima, Reiji Kuriki, Akira Ibi, Masateru Yoshizumi, Akio Kinoshita, Yutaka Yamada, Yuh Shiohara, Ryuji Yoshida, Takeharu Kato, Tsukasa Hirayama
  • Patent number: 8926868
    Abstract: A superconducting article comprises a substrate, a buffer layer overlying the substrate, and a high-temperature superconducting (HTS) layer overlying the buffer layer. The HTS layer includes a plurality of nanorods. A method of forming a superconducting article comprises providing a substrate, depositing a buffer layer overlying the substrate; forming a nanodot array overlying the buffer layer; depositing an array of nanorods nucleated on the nanodot array; and depositing a high-temperature superconducting (HTS) layer around the array of nanorods and overlying the buffer layer.
    Type: Grant
    Filed: July 27, 2010
    Date of Patent: January 6, 2015
    Assignees: University of Houston System, Superpower, Inc.
    Inventors: Venkat Selvamanickam, Goran Majkic, Maxim Martchevskii
  • Publication number: 20150005175
    Abstract: A method for manufacturing a superconducting wire material in which the superconducting current is not saturated even when a superconducting layer is made into a thick film, and a superconducting wire material. In the method a superconducting layer is formed on a metal substrate interposed by an intermediate layer, the method including heating the metal substrate up to the film-formation temperature of a superconducting film for forming the superconducting layer, forming a superconducting film having a film thickness of at least 10 nm and no more than 200 nm on the intermediate layer, and reducing the metal substrate temperature to a level below the film-formation temperature of the superconducting film, and the superconducting film-formation, including the heating, the film-formation, and the cooling, are performed a plurality of times.
    Type: Application
    Filed: February 1, 2012
    Publication date: January 1, 2015
    Applicants: FURUKAWA ELECTRIC CO., LTD., CHUBU ELECTRIC POWER COMPANY, INCORPORATED
    Inventors: Ryusuke Nakasaki, Akinobu Nakai, Tomonori Watanabe, Naoji Kashima, Shigeo Nagaya
  • Patent number: 8921276
    Abstract: The phase transition temperature, at which the crystal lattice of LMO that constitutes an oxide layer as an intermediate layer or as a part of an intermediate layer becomes cubic, is lowered. A substrate for a superconducting wire rod includes an oxide layer (LMO layer (22)) which contains, as a principal material, a crystalline material represented by the compositional formula: Laz(Mn1?xMx)wO3+? (wherein M represents at least one of Cr, Al, Co or Ti, ? represents an oxygen non-stoichiometric amount, 0<w/z<2, and 0<x?1).
    Type: Grant
    Filed: November 2, 2011
    Date of Patent: December 30, 2014
    Assignee: Furukawa Electric Co., Ltd.
    Inventors: Masayasu Kasahara, Hiroyuki Fukushima, Yoshikazu Okuno, Yuko Hayase
  • Publication number: 20140378313
    Abstract: The present invention refers to a method for applying a smoothening layer on a band substrate for subsequent manufacturing a high temperature superconductor tape, wherein the method comprises the steps: (a) applying a liquid containing polysilazane on at least one side of the band substrate; and (b) heating the liquid containing polysilazane to a temperature?450° C. for depositing a layer on the band substrate which comprises silicon oxynitride (SiNxOy, wherein 0?x<0.6 and 1.0<y?2.0), and/or silicon-carbon-oxynitride (SiCxNyOz, 2·y<x?1.0, 0<y<0.2 and 1.0<z?2.0).
    Type: Application
    Filed: May 23, 2014
    Publication date: December 25, 2014
    Applicant: Theva Dünnschichttechnik GmbH
    Inventor: Werner Prusseit
  • Patent number: 8911653
    Abstract: An object of one embodiment of the present invention is to provide a more convenient highly reliable light-emitting device which can be used for a variety of applications. Another object of one embodiment of the present invention is to manufacture, without complicating the process, a highly reliable light-emitting device having a shape suitable for its intended purpose. In a manufacturing process of a light-emitting device, a light-emitting panel is manufactured which is at least partly curved by processing the shape to be molded after the manufacture of an electrode layer and/or an element layer, and a protective film covering a surface of the light-emitting panel which is at least partly curved is formed, so that a light-emitting device using the light-emitting panel has a more useful function and higher reliability.
    Type: Grant
    Filed: May 18, 2010
    Date of Patent: December 16, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Kaoru Hatano
  • Publication number: 20140353476
    Abstract: A fiber optical superconducting nanowire detector with increased detector efficiency, fabricated directly on the tip of the input optical fiber. The fabrication on the tip of the fiber allows precise alignment of the detector to the fiber core, where the field mode is maximal. This construction maximizes the coupling efficiency to close to unity, without the need for complex alignment procedures, such as the need to align the input fiber with a previously fabricated device. The device includes a high-Q optical cavity, such that any photon entering the device will be reflected to and fro within the cavity numerous times, thereby increasing its chances of absorption by the nanowire structure. This is achieved by using dedicated cavity mirrors with very high reflectivity, with the meander nanowire structure contained within the cavity between the end mirrors, such that photons impinge on the nanowire structure with every traverse of the cavity.
    Type: Application
    Filed: December 23, 2012
    Publication date: December 4, 2014
    Inventors: Gil Bachar, Oleg Shtempluck, Eyal Buks
  • Publication number: 20140342916
    Abstract: Provided is a method of forming a superconducting wire. In the method, a buffer layer is formed on a substrate. Then, a superconducting precursor film is formed on the substrate formed with the pinning seed layer. Thereafter, the substrate formed with the superconducting precursor film is heat-treated to form a superconducting film including magnetic flux pinning centers on the substrate. The magnetic flux pinning centers comprise at least one element included in the pinning seed layer, and at least one element included in the superconducting precursor film.
    Type: Application
    Filed: January 17, 2013
    Publication date: November 20, 2014
    Inventors: Seung Hyun Moon, Jae Hoon Lee, Hun-Ju Lee
  • Publication number: 20140329686
    Abstract: The invention pertains to creating new extremely low resistance (“ELR”) materials, which may include high temperature superconducting (“HTS”) materials. In some implementations of the invention, an ELR material may be modified by depositing a layer of modifying material unto the ELR material to form a modified ELR material. The modified ELR material has improved operational characteristics over the ELR material alone. Such operational characteristics may include operating at increased temperatures or carrying additional electrical charge or other operational characteristics. In some implementations of the invention, the ELR material is a cuprate-perovskite, such as, but not limited to BSCCO. In some implementations of the invention, the modifying material is a conductive material that bonds easily to oxygen, such as, but not limited to, chromium.
    Type: Application
    Filed: March 3, 2014
    Publication date: November 6, 2014
    Applicant: Ambature, Inc.
    Inventors: Douglas J. Gilbert, Timothy S. Cale
  • Publication number: 20140315723
    Abstract: A method for fabricating a tunnel junction includes depositing a first electrode on a substrate, depositing a wetting layer having a thickness of less than 2 nm on the first electrode, using atomic layer deposition (ALD) to deposit an oxide layer on the wetting layer, and depositing a second electrode on the oxide layer. The wetting layer and the oxide layer form a tunnel barrier, and the second electrode includes a superconductor.
    Type: Application
    Filed: April 21, 2014
    Publication date: October 23, 2014
    Applicant: The Regents of the University of California
    Inventors: Stephanie Moyerman, Brian Keating
  • Publication number: 20140287928
    Abstract: A method for manufacturing a superconducting wire includes the following steps. A laminate metal having a first metal layer and a Ni layer formed on the first metal layer is prepared. An intermediate layer (20) is formed on the Ni layer of the laminate metal. A superconducting layer (30) is formed on the intermediate layer (20). By subjecting the laminate metal to a heat treatment after at least either of the step of forming a intermediate layer (20) and the step of forming a superconducting layer (30), a nonmagnetic Ni alloy layer (12) is formed from the laminate metal.
    Type: Application
    Filed: November 27, 2013
    Publication date: September 25, 2014
    Applicants: TOYO KOHAN CO., LTD., Sumitomo Electric Industries, Ltd.
    Inventor: Hajime Ota
  • Publication number: 20140249034
    Abstract: A superconducting element for a superconducting fault current limiter, including a substrate 32, an intermediate layer 34 that is formed on the substrate 32, a superconducting layer 36 that is formed on the intermediate layer 34, an electrode 44 that is connected to the superconducting layer 36, and a metal fine particle sintered layer 40 that is interposed between the superconducting layer 36 and the electrode 44 and connects the superconducting layer 36 and the electrode 44.
    Type: Application
    Filed: November 22, 2013
    Publication date: September 4, 2014
    Applicant: FURUKAWA ELECTRIC CO., LTD.
    Inventors: Tomohiro NAKAYAMA, Weiming ZHOU, Hajime KASAHARA, Kengo NAKAO, Akifumi NAKAJIMA, Masakazu MATSUI
  • Patent number: 8809237
    Abstract: A method of forming a superconducting article includes providing a substrate tape, forming a superconducting layer overlying the substrate tape, and depositing a capping layer overlying the superconducting layer. The capping layer includes a noble metal and has a thickness not greater than about 1.0 micron. The method further includes electrodepositing a stabilizer layer overlying the capping layer using a solution that is non-reactive to the superconducting layer. The superconducting layer has an as-formed critical current IC(AF) and a post-stabilized critical current IC(PS). The IC(PS) is at least about 95% of the IC(AF).
    Type: Grant
    Filed: February 19, 2008
    Date of Patent: August 19, 2014
    Assignee: SuperPower, Inc.
    Inventors: Raghu N. Bhattacharya, Xun Zhang, Venkat Selvamanickam
  • Patent number: 8809236
    Abstract: A method for manufacturing a high temperature superconductor (=HTS) coated tape (20), with the following steps: preparation of a substrate tape (1), deposition of at least one buffer layer (2), deposition of an HTS film (3), deposition of a metallic protection layer (35) on the HTS film (3) and deposition of a metallic shunt layer (36) is characterized in that, prior to deposition of the metallic shunt layer (36), the partially prepared coated tape (10) undergoes a laser beam cutting in order to provide a desired tape form, wherein the laser beam cutting is applied together with a gas flow and/or a liquid flow (23). The method reduces the loss of critical current and reduces or avoids a deterioration of the critical temperature in a HTS coated tape due to tape cutting.
    Type: Grant
    Filed: February 15, 2012
    Date of Patent: August 19, 2014
    Assignees: Oswald Elektromotoren GmbH, Bruker HTS GmbH
    Inventors: Johannes Oswald, Bernhard Oswald, Thomas Reis, Alexander Rutt, Alexander Usoskin
  • Patent number: 8796181
    Abstract: The invention pertains to creating new extremely low resistance (“ELR”) materials, which may include high temperature superconducting (“HTS”) materials. In some implementations of the invention, an ELR material may be modified by depositing a layer of modifying material unto the ELR material to form a modified ELR material. The modified ELR material has improved operational characteristics over the ELR material alone. Such operational characteristics may include operating at increased temperatures or carrying additional electrical charge or other operational characteristics. In some implementations of the invention, the ELR material is a cuprate-perovskite, such as, but not limited to YBCO. In some implementations of the invention, the modifying material is a conductive material that bonds easily to oxygen, such as, but not limited to, chromium.
    Type: Grant
    Filed: June 13, 2012
    Date of Patent: August 5, 2014
    Assignee: Digital Signal Corporation
    Inventors: Douglas J. Gilbert, Timothy S. Cale
  • Patent number: 8772201
    Abstract: An oxide superconducting conductor of the invention is configured to include an oxide superconducting layer including a substrate and an oxide superconductor formed on the substrate. The oxide superconductor being expressed by a composition formula of RE1Ba2Cu3Oy where RE represents a rare earth element and an expression of 6.5<y<7.1 is satisfied. A normal conduction phase including Ba and a different phase including an alkaline earth metal having an ionic radius smaller than that of Ba are dispersed in the oxide superconducting layer. The normal conduction phase is an oxide including Ba and one selected from a group consisting of Zr, Sn, Hf, Ce, and Ti.
    Type: Grant
    Filed: October 5, 2012
    Date of Patent: July 8, 2014
    Assignee: Fujikura Ltd.
    Inventor: Mitsunori Igarashi
  • Publication number: 20140187428
    Abstract: An insulated high-temperature wire superconductor includes a wire of a noninsulated high temperature wire superconductor, the width of which is at least 10 times its thickness and in which a high-temperature superconductor is introduced into a matrix or is applied to a substrate. The wire is provided with an electrically non-conducting insulating layer on both sides such that the two insulating layers have an insulating edge width in a range from 2 mm to 200 mm which projects in relation to the wire.
    Type: Application
    Filed: July 4, 2012
    Publication date: July 3, 2014
    Applicant: KARLSRUHER INSTITUT FUER TECHNOLOGIE
    Inventors: Wilfried Goldacker, Stefan Fink, Andrej Kudymow, Steffen Elschner, Joerg Brand
  • Patent number: 8758579
    Abstract: A chamber for physical vapor deposition is provided. The chamber includes a housing, a door for opening and closing the housing, and a bearing for receiving a target, wherein the bearing is oriented in a first direction. Further, the chamber is adapted so that the target is at least partially removable from the chamber in the first direction. According to an embodiment, a chamber for physical vapor deposition is provided. The chamber is adapted for receiving at least one target and a substrate. The chamber includes a housing, a door, and at least one bearing for mounting the target, wherein the bearing is attached to the door.
    Type: Grant
    Filed: May 17, 2010
    Date of Patent: June 24, 2014
    Assignee: Applied Materials, Inc.
    Inventors: Reiner Hinterschuster, Lothar Lippert
  • Publication number: 20140162884
    Abstract: Described is a superconductive layered structure and an article including this superconductive layered structure on a substrate structure. The superconductive layered structure comprises a stack including at least one bi-layered assembly formed by first and second layers of similar superconducting material compositions, the second layer being superconductive at predetermined temperature condition, the first layer being a substantially thin layer and having a c lattice parameter selected in accordance with those of the substrate structure and the second layer, such that said first layer is non-superconductive at said predetermined temperature condition thereby allowing the second superconductive layer to be desirably thick to provide high critical current density of the superconductive layer.
    Type: Application
    Filed: February 11, 2014
    Publication date: June 12, 2014
    Applicant: Ramot at Tel-Aviv University Ltd.
    Inventors: Guy DEUTSCHER, Mishael AZOULAY, Boaz ALMOG
  • Publication number: 20140148343
    Abstract: An RE123-based superconducting wire includes a base material, an intermediate layer formed on the base material, and an oxide superconducting layer which is formed on the intermediate layer and includes an oxide superconductor having a composition formula represented by RE1Ba2Cu3O7?? (RE represents one or two or more rare earth elements), in which the oxide superconducting layer includes 0.5 to 10 mol % of a Hf-including compound dispersed in the oxide superconducting layer as an artificial pinning center, a film thickness d of the oxide superconducting layer is d>1 ?m, and a current characteristic of Jcd/Jc1?0.9 (Jc1 represents a critical current density when the thickness of the oxide superconducting layer is 1 ?m, and Jcd represents the critical current density when the thickness of the oxide superconducting layer is d ?m) is satisfied.
    Type: Application
    Filed: December 26, 2013
    Publication date: May 29, 2014
    Applicants: Fujikura Ltd., International Superconductivity Technology Center
    Inventors: Hiroshi TOBITA, Masateru YOSHIZUMI, Teruo IZUMI, Yuh SHIOHARA
  • Patent number: 8735326
    Abstract: Methods of forming superconducting devices are disclosed. In one embodiment, the method can comprise depositing a protective barrier layer over a superconducting material layer, curing the protective barrier layer, depositing a photoresist material layer over the protective barrier layer and irradiating and developing the photoresist material layer to form an opening pattern in the photoresist material layer. The method can further comprise etching the protective barrier layer to form openings in the protective barrier layer based on the opening pattern, etching the superconductor material layer based on the openings in the protective barrier layer to form openings in the superconductor material layer that define a first set of superconductor material raised portins and stripping the photoresist material layer and the protective barrier layer.
    Type: Grant
    Filed: May 19, 2010
    Date of Patent: May 27, 2014
    Assignee: Northrop Grumman Systems Corporation
    Inventors: Erica Folk, Patrick B. Shea, Andrew C. Loyd
  • Patent number: 8716189
    Abstract: A method of producing a superconductive material involves the step (1) of applying a solution of an organic compound of metals, oxides of the metals forming a superconductive material, onto a support body to be subsequently dried, a provisional baking step (2) of causing organic components of the organic compound of the metals to undergo thermal decomposition, and a main baking process step (3) of causing transformation of the oxides of the metals into the superconductive material, thereby producing an epitaxially-grown superconductive coating material, wherein at the time of irradiation of a surface of the support body coated with the solution of the organic compound of the metals for forming the superconductive material, and/or of a surface of the support body, opposite to the surface coated with the solution of the organic compound of the metals, with the laser light, during a period between the steps (1) and (2).
    Type: Grant
    Filed: February 5, 2008
    Date of Patent: May 6, 2014
    Assignees: National Institute of Advanced Industrial Science and Technology, The Japan Steel Works, Ltd.
    Inventors: Mitsugu Sohma, Tetsuo Tsuchiya, Toshiya Kumagai, Kenichi Tsukada, Kunihiko Koyanagi, Takashi Ebisawa, Hidehiko Ohtu
  • Publication number: 20140080714
    Abstract: An oxide superconducting thin film includes a substrate having a single crystal structure, the main face of the substrate and a crystal face of the single crystal structure having an angle therebetween; an intermediate layer formed on the main face of the substrate and having an axis oriented in a direction perpendicular to the crystal face; and a superconducting layer formed on the intermediate layer and containing, as a main component, an oxide superconductor having a c-axis oriented in a direction perpendicular to the surface of the intermediate layer. A superconducting fault current limiter and a method of manufacturing an oxide superconducting thin film are also provided.
    Type: Application
    Filed: May 30, 2012
    Publication date: March 20, 2014
    Applicants: National Institute of Advance Industrial Science and Technology, FURUKAWA ELECTRIC CO., LTD.
    Inventors: Kengo Nakao, Hajime Kasahara, Masakazu Matsui, Norio Matsui, Naoto Edo, Toshiya Kumagai, Takaaki Manabe, Mitsugu Sohma
  • Publication number: 20140066311
    Abstract: Provided is a method for manufacturing an oxide superconductor, including preparing a coating solution containing alcohols including methanol as a solvent, the coating solution dissolving fluorocarboxylic acid salts including trifluoroacetates, the trifluoroacetates including a metal, barium and copper, the metal being selected from yttrium and lanthanoid metals (provided that cerium, praseodymium, promethium, and ruthenium are excluded); adding a substance of formula: CF2H—(CF2)n—COOH or HOCO—(CF2)m—COOH (wherein n and m represent positive integers) as a crack preventing chemical to the coating solution; forming a gel film on a substrate using the coating solution having the crack preventing chemical added thereto; forming a calcined film by calcining the gel film at an oxygen partial pressure of 3% or less in a process that is maintained at 200° C. or higher for a total time of 7 hours or less; and forming an oxide superconductor film by firing and oxygen anneal of the calcined film.
    Type: Application
    Filed: August 12, 2013
    Publication date: March 6, 2014
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Takeshi ARAKI, Mariko Hayashi, Hiroyuki Fuke
  • Patent number: 8658571
    Abstract: The invention relates to a method for the wet chemical production of an HTSL on a carrier, wherein an HTSL precursor solution comprising no trifluoroacetate may be utilized if the same is heated to a temperature Ts during the heat treatment of the HTSL precursor, wherein the remaining substances of the HTSL precursor solution form at least a partial melt, which is below the temperature at which RE2BaCuOx is formed, and which is deposited from the liquid phase while forming a peritectic.
    Type: Grant
    Filed: March 18, 2010
    Date of Patent: February 25, 2014
    Assignee: BASF SE
    Inventors: Isabel van Driessche, Pieter Vermeir, Serge Hoste, Michael Baecker
  • Patent number: 8653005
    Abstract: This invention provides a method of making a fluorinated precursor of a superconducting ceramic. The method comprises providing a solution comprising a rare earth salt, an alkaline earth metal salt and a copper salt; spraying the solution onto a substrate to provide a film-covered substrate; and heating the film-covered substrate in an atmosphere containing fluorinated gas to provide the fluorinated precursor.
    Type: Grant
    Filed: June 8, 2012
    Date of Patent: February 18, 2014
    Assignee: Brookhaven Science Associates, LLC
    Inventors: Harold Wiesmann, Vyacheslav Solovyov
  • Patent number: 8649834
    Abstract: A layered superconductor device includes multiple layers of a single crystal superconducting material having intermittent layers of superconducting material dispersed in a pattern with a second material such that each layer of the multiple layers a single crystal superconducting material are interconnected via superconducting material, allowing for a continuous current path, and a thickness of the superconducting material never exceeds a first predetermined thickness.
    Type: Grant
    Filed: September 13, 2012
    Date of Patent: February 11, 2014
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventor: Thomas O. Jones
  • Patent number: 8647705
    Abstract: A method for forming a superconductive article is disclosed. According to one method, a substrate is provided, the substrate having an aspect ratio of not less than about 1×103, forming a buffer layer overlying the substrate, forming a superconductor layer overlying the buffer layer, and characterizing at least one of the substrate, the buffer layer and the superconductor layer by x-ray diffraction. In this regard, x-ray diffraction is carried out such that data are taken at multiple phi angles. Data acquisition at multiple phi angles permits robust characterization of the film or layer subject to characterization, and such data may be utilized for process control and/or quality control. Additional methods for forming superconductive articles, and for characterizing same with XRD are also disclosed.
    Type: Grant
    Filed: May 7, 2012
    Date of Patent: February 11, 2014
    Assignee: SuperPower, Inc.
    Inventors: Jodi Lynn Reeves, David M. Gibson, Walter M. Gibson, Huapeng Huang
  • Publication number: 20140038829
    Abstract: A superconducting thin film material exhibiting excellent superconducting properties and a method of manufacturing the same are provided. A superconducting thin film material includes a substrate, and a superconducting film formed on the substrate. The superconducting film includes an MOD layer formed by an MOD process, and a gas-phase-formed layer formed on the MOD layer by a gas-phase process. Since the MOD layer is formed first and then the gas-phase-formed layer is formed in this manner, degradation of the properties of the gas-phase-formed layer due to heat treatment in the step of forming the MOD layer (heat treatment in the MOD process) can be prevented.
    Type: Application
    Filed: May 9, 2012
    Publication date: February 6, 2014
    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Kei Hanafusa, Genki Honda, Kotaro Ohki, Tsuyoshi Nakanishi, Takahiro Taneda, Tatsuoki Nagaishi
  • Publication number: 20140024535
    Abstract: A manufacturing apparatus which manufactures a superconducting wire rod, includes first, second, and third chambers which are connected in series, an exhaust device which exhaust air from the first to third chambers, a carrier device which carries a substrate such that the substrate passes through the first to third chambers in this order, a first film formation device which forms a metal layer on the substrate in the first chamber, a first gas supply device which supplies oxidation gas to the second chamber to oxidize a surface of the metal layer, and a second film formation device which forms an oxide layer on the metal layer, the surface of which has been oxidized, in the third chamber.
    Type: Application
    Filed: January 23, 2013
    Publication date: January 23, 2014
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventor: KABUSHIKI KAISHA TOSHIBA
  • Publication number: 20140011683
    Abstract: A composition of matter for a layered ionic superconductor comprising a plurality of layers of ions and electronic interaction charges, and having a substantially improved superconducting transition temperature is described. An aspect of the composition includes a first layer comprising a plurality of alkali ions and cesium ions in particular that is adjacent to a second layer comprising a plurality of halogen ions and fluorine ions in particular. The first and second layers contain electronic interaction charges and are separated by a predetermined perpendicular distance. Crystalline structure, ionic properties, superconducting transition temperature, and superfluid density for several embodiments including companion ionic species are described and illustrated. Methods for preparing the several embodiments are provided.
    Type: Application
    Filed: July 6, 2012
    Publication date: January 9, 2014
    Inventors: Dale Richard Harshman, Anthony Thomas Fiory