Vacuum Or Pressure Utilized Patents (Class 427/81)
  • Patent number: 11430610
    Abstract: A film capacitor that includes a laminate having a first resin film including a first metal layer on a surface thereof alternately laminated with a second resin film including a second metal layer on a surface thereof, the laminate having opposed first and second ends, a first external electrode on the first end of the laminate, and a second external electrode on the second end of the laminate, wherein the first resin film protrudes more than the second resin film by a first protruding length of 0.5 mm to 3 mm on the first end of the laminate, and the first resin film has a Young's modulus at 150° C. of 0.6 GPa or more in a direction perpendicular to a lamination direction of the laminate and parallel to a direction from the first end to the second end of the laminate.
    Type: Grant
    Filed: May 13, 2020
    Date of Patent: August 30, 2022
    Inventors: Satoru Jogan, Tomomichi Ichikawa, Shinichi Kobayashi, Tomoki Inakura, Kimiaki Kikuchi, Satoshi Kamei, Kyosuke Yoshida
  • Patent number: 8900653
    Abstract: A method of producing an electrode for an electricity storage device includes producing a paste to form an electrode active material layer, in which aggregates of a solids fraction material that contains at least an electrode active material and a binder are dispersed in a solvent, coating the paste on a surface of a current collector, and drying the current collector coated with the paste, to form the electrode active material layer formed of the solids fraction material. The paste is produced in such a manner that a content ratio of the solids fraction material in the paste is 60 to 80 mass %, an abundance ratio for the aggregates with a particle size that is equal to or smaller than 20 ?m is at least 99%, and a viscosity at 25° C. and a shear rate of 40 s?1 is 200 to 5,000 mPa·s.
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: December 2, 2014
    Assignee: Toyota Jidosha Kabushiki Kaisha
    Inventors: Junya Mori, Hideki Hagiwara
  • Publication number: 20140328004
    Abstract: One aspect is a capacitor, having a multitude of parallel insulator layers in one stack direction, made of an electrically non-conducting material, a multitude of conductor layers alternatingly stacked with the insulator layers in the direction of the stack made from a conductive material and at least one contact body. A least some of the conductor layers are connected to one another in a conductive manner via the contact body. The contact body extends through breaks form several insulator layers, where at least the insulator layers are made of a sintered material. The contact body to be manufactured at least partially from a sintered material, which is introduced into the breaks in the insulator layers in an unsintered, malleable state.
    Type: Application
    Filed: November 13, 2012
    Publication date: November 6, 2014
    Inventors: Heiko Specht, Jacob Markham, Goran Pavlovic, Ulrich Hausch
  • Patent number: 8852460
    Abstract: Methods and compositions for the deposition of a film on a substrate. In general, the disclosed compositions and methods utilize a precursor containing calcium or strontium.
    Type: Grant
    Filed: March 18, 2009
    Date of Patent: October 7, 2014
    Assignees: Air Liquide Electronics U.S. LP, American Air Liquide, Inc.
    Inventors: Olivier Letessier, Christian Dussarrat, Benjamin J. Feist, Vincent M. Omarjee
  • Patent number: 8663752
    Abstract: A method of manufacturing carbon coated aluminum foil as a cathode of solid aluminum electrolytic capacitors Comprising the steps of: preparing an aluminum foil by setting the aluminum foil into a chamber; roughening at least one surface of the aluminum foil by introducing gas into the chamber and activating an electric field so that the gas is ionized and turned into a plasma; and depositing carbon atoms by introducing gas mixed with carbon atoms and turning on the electric field again so as to make the carbon atoms have positive charge thereby impacting into and attaching firmly to the rough surface of the aluminum foil to form a carbon film.
    Type: Grant
    Filed: March 14, 2011
    Date of Patent: March 4, 2014
    Inventor: Hung-Wen Tsai
  • Patent number: 8603195
    Abstract: Methods and apparatus for forming energy storage devices are provided. In one embodiment a method of producing an energy storage device is provided. The method comprises positioning an anodic current collector into a processing region, depositing one or more three-dimensional electrodes separated by a finite distance on a surface of the anodic current collector such that portions of the surface of the anodic current collector remain exposed, depositing a conformal polymeric layer over the anodic current collector and the one or more three-dimensional electrodes using iCVD techniques comprising flowing a gaseous monomer into the processing region, flowing a gaseous initiator into the processing region through a heated filament to form a reactive gas mixture of the gaseous monomer and the gaseous initiator, wherein the heated filament is heated to a temperature between about 300° C. and about 600° C., and depositing a conformal layer of cathodic material over the conformal polymeric layer.
    Type: Grant
    Filed: August 18, 2010
    Date of Patent: December 10, 2013
    Assignee: Applied Materials, Inc.
    Inventors: Victor L. Pushparaj, Pravin K. Narwankar, Omkaram Nalamasu
  • Publication number: 20130194714
    Abstract: A dielectric thin film element having a high humidity resistance is provided. A dielectric thin film element includes a capacitance section having a dielectric layer and a pair of electrode layers formed on the respective upper and lower surfaces of the dielectric layer 22. Furthermore, a protection layer is provided on the capacitance section, a pair of interconnect layers are drawn out to an upper surface of the protection layer, and external electrodes are formed to be electrically connected to the interconnect layers. Further, first surface metal layers cover a portion of the interconnect layers that extends along the inner surface of the openings and second surface metal layers are formed at end of the first surface metal layers.
    Type: Application
    Filed: March 12, 2013
    Publication date: August 1, 2013
    Inventor: Murata Manufacturing Co., Ltd.
  • Patent number: 8481106
    Abstract: A method of fabrication of high-k paraelectric metal oxide films at low temperatures utilizing ordered mesoporous metal oxide thin films synthesized by organic templating methodology. The process consisting of (a) chemical solution deposition of periodic ordered mesoporous structures containing high-k metal oxide films, (b) removal of organic template additives, (c) infiltration of the pores with an appropriate second phase, and (d) low temperature thermal and/or annealing of infiltrated films.
    Type: Grant
    Filed: March 6, 2008
    Date of Patent: July 9, 2013
    Assignee: SBA Materials, Inc.
    Inventors: Shyama P. Mukherjee, Mark L. F. Phillips, Travis P. S. Thoms
  • Patent number: 8475866
    Abstract: A method for manufacturing a ceramic electronic component capable of preventing degradation of the self alignment property and product characteristics due to absorption of flux into pores of a ceramic element assembly during soldering in mounting and a ceramic electronic component. In the method, a ceramic element assembly is subjected to an oil-repellent treatment by using an oil-repellent agent containing a polyfluoropolyether compound as a primary component and hydrofluoroether as a solvent, so as to avoid absorption of the flux by the ceramic element assembly.
    Type: Grant
    Filed: June 14, 2012
    Date of Patent: July 2, 2013
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Tatsuya Mizuno, Masaharu Konoue, Hiroki Hashimoto, Mitsuru Ueda
  • Patent number: 8092721
    Abstract: Methods and compositions for the deposition of ternary oxide films containing ruthenium and an alkali earth metal.
    Type: Grant
    Filed: March 26, 2009
    Date of Patent: January 10, 2012
    Assignees: L'Air Liquide Societe Anonyme pour l'Etude Et l'Exploitation des Procedes Georges Claude, American Air Liquide, Inc.
    Inventors: Satoko Gatineau, Julien Gatineau, Christian Dussarrat
  • Patent number: 8049948
    Abstract: This invention provides a novel process for producing an electrochemical display element, which can easily form a white scattering layer between opposed electrodes, has a high level of suitability for production, and has high stability after long-term use. The production process is characterized in that a film containing a white scattering material and a polymeric binder is formed on at least one electrode in opposed electrodes, the other electrode is disposed so as to face the electrode with film formed thereon, a low-viscosity electrolyte is poured into a space between the opposed electrodes, and the polymeric binder is dissolved in or swollen in the electrolyte to form a gel-like electrolyte layer containing the white scattering material and the polymeric binder within the space.
    Type: Grant
    Filed: June 3, 2008
    Date of Patent: November 1, 2011
    Assignee: Konica Minolta Holdings, Inc.
    Inventors: Takeshi Hakii, Tomoo Izumi
  • Publication number: 20100254067
    Abstract: A method of manufacturing electronic ceramic components, especially multilayer ceramic components, by applying a green ceramic layer through chemical coating methods on a mesh electrode of at least one sheet of conductive mesh to achieve extended ceramic layer thickness range, improved thermal conductivity, and improved mechanical strength of the components. The green ceramic coated mesh electrode can be wound up into a cylindrical format or stacked up into a multilayer format, then sintered into a multilayer component body. A counter electrode of an impregnated conductive substance or a deposited conductive layer is formed on the top of sintered ceramic layer separately with the sintering of the ceramic active layer to eliminate the internal stresses caused by conventional co-firing process.
    Type: Application
    Filed: April 4, 2009
    Publication date: October 7, 2010
    Inventor: Frank Wei
  • Patent number: 7799163
    Abstract: This invention relates to a process for preparing a substrate-supported aligned carbon nanotube film including: synthesizing a layer of aligned carbon nanotubes on the substrate capable of supporting nanotube growth, applying a layer of a second substrate to a top surface of aligned carbon nanotube layer, removing said substrate capable of supporting nanotube growth to provide an aligned carbon nanotube film supported on said second substrate.
    Type: Grant
    Filed: May 25, 2000
    Date of Patent: September 21, 2010
    Assignee: University of Dayton
    Inventors: Albert Mau, Li-ming Dai, Shaoming Huang
  • Publication number: 20100181106
    Abstract: An apparatus having a reduced reflection from its surface includes a dielectric material and a capacitive circuit analog sheet buried within the dielectric material and configured to produce a reflection that adds out of phase with a reflection from an incident side of the dielectric material. The capacitive circuit analog sheet comprises conductive patches configured to have high impedance for transverse magnetic (TM) polarization.
    Type: Application
    Filed: January 16, 2009
    Publication date: July 22, 2010
    Inventors: Thomas Peter Delfeld, Nicole L. Dehuff
  • Patent number: 7718033
    Abstract: A one step method and system for producing nanofluids by a particle-source evaporation and deposition of the evaporant into a base fluid. The base fluid such (i.e. ethylene glycol) is placed in a rotating cylindrical drum having an adjustable heater-boat-evaporator and heat exchanger-cooler apparatus. As the drum rotates, a thin liquid layer is formed on the inside surface of the drum. A heater-boat-evaporator having an evaporant material (particle-source) placed within its boat evaporator is adjustably positioned near a portion of the rotating thin liquid layer, the evaporant material being heated thereby evaporating a portion of the evaporant material, the evaporated material absorbed by the liquid film to form nanofluid.
    Type: Grant
    Filed: July 12, 2006
    Date of Patent: May 18, 2010
    Assignee: The United States of America as represented by the United States Department of Energy
    Inventors: Milivoje Kostic, Mihajlo Golubovic, John R. Hull, Stephen U. S. Choi
  • Publication number: 20090324851
    Abstract: A method for fabricating a metal-insulator-metal (MIM) capacitor includes providing a substrate comprising a bottom electrode, forming a dielectric layer positioned on the bottom electrode, and forming a top electrode positioned on the dielectric layer. The dielectric layer includes a silicon nitride film, the silicon nitride film has a plurality of Si—H bonds and a plurality of N—H bonds, and a ratio of Si—H bonds to N—H bonds being equal to or smaller than 0.5.
    Type: Application
    Filed: September 7, 2009
    Publication date: December 31, 2009
    Inventors: Lian-Hua Shih, Yi-Ching Wu, Jiann-Fu Chen, Ming-Te Chen, Chin-Jen Cheng
  • Publication number: 20090279227
    Abstract: The present invention carries out the vacuum deposition by setting a deposition angle between a single mask set including a shadow mask having a plurality of slits and a deposition source to form a lower terminal layer, a dielectric layer, an inner electrode layer, and an upper terminal layer at once under a vacuum state generated once, or adjusts slit patterns by relatively moving upper and lower mask sets that respectively include shadow masks having a plurality of slits and face each other to form a lower terminal layer, a dielectric layer, an inner electrode layer, and an upper terminal layer at once under a vacuum state generated once.
    Type: Application
    Filed: June 21, 2006
    Publication date: November 12, 2009
    Inventor: Jae-Ho Ha
  • Publication number: 20090029035
    Abstract: A method for selectively producing film laminates for packaging and for insulating unpackaged electronic components and functional patterns and corresponding device. The method coat surface regions of functional patterns arranged on a substrate and/or of surface regions of semiconductor chips arranged on the substrate. An insulation is to be effectively adapted in its properties to different requirements of functional patterns and/or electronic components. Film regions are laminated on surface regions in such a way that the properties of the plastics material of the film regions are adapted to the function of the film. This adaptation is individual and selective. Various films are used. The method is suitable in particular for coating or packaging electronic components or active and passive devices.
    Type: Application
    Filed: December 20, 2006
    Publication date: January 29, 2009
    Inventors: Jorg Naundorf, Karl Weidner, Hans Wulkesch
  • Patent number: 7378074
    Abstract: A carbon nanotube suspension uses water as the basic solvent added with dispersant, stabilizer, coalescing aid, adhesion promoter, and a carbon nanotube. The basic solvent and the above solutes form a low viscosity solvent with carbon nanotube suspending therein. Therefore, the carbon nanotube suspension is formed to serve as a source material of the electron emission source of a field-emission display. That is, the carbon nanotube can be coated on a surface for forming the carbon nanotube electron-emission layer.
    Type: Grant
    Filed: January 31, 2007
    Date of Patent: May 27, 2008
    Assignee: Teco Nanotech Co., Ltd
    Inventors: Kuei-Wen Cheng, Chun-Yen Hsaio, Jin-Lung Tsai, Yu-An Li
  • Patent number: 7343216
    Abstract: The method for assembling an architectural site model facilitates repeated placement and removal of foliage to the model. The site model is constructed as an upper shell portion and a lower base portion. Model foliage is attached to the shell portion. The upper shell portion of the site model is configured for removable attachment to the lower base portion. Thus, removal of the shell from the site model also allows the foliage to be removed from the site model in one motion.
    Type: Grant
    Filed: July 12, 2006
    Date of Patent: March 11, 2008
    Inventor: Lawrence W. Swift
  • Patent number: 7067173
    Abstract: Provided is a Ag-based conductive paste for a terminal electrode which suppresses oxidation of the Ni surface of an internal conductor and therefore brings about excellent joining with Ni even when baking is performed in the atmosphere in the case where Ni is used as the internal conductor of a laminated ceramic electronic component. The conductive paste includes at least one of an Ag powder and an Ag alloy powder, a nickel boride powder, an inorganic binder and an organic vehicle, wherein the quantity of the nickel boride powder is within the range of about 5% by weight or more, but less than about 60% by weight of the total paste.
    Type: Grant
    Filed: May 19, 2004
    Date of Patent: June 27, 2006
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Takeshi Miki, Satoru Noda
  • Patent number: 6975453
    Abstract: The present invention comprises a multilayer inorganic anti-reflective coating with predetermined optical properties, for application on a flexible substrate. The coating comprises a stack consisting of five material layers, whereby the third layer is a dummy layer consisting of an electrically conductive material, preferably indium-tinoxyde, which provides the coating with an adjustable electrical sheet resistance of between 25 and 2000 ?/sq without thereby influencing its optical properties. The anti-reflective coating can be applied onto a flexible substrate (e.g. a polymer film) by means of a single 12 or double pass vacuum magnetron sputtering operation.
    Type: Grant
    Filed: October 27, 1998
    Date of Patent: December 13, 2005
    Assignee: Innovative Sputtering Technology
    Inventors: Paul Lippens, Peter Persoone
  • Patent number: 6936301
    Abstract: Oxygen partial pressure may be controlled during annealing of a perovskite dielectric layer by providing an oxygen-absorbing layer adjacent the perovskite dielectric layer, and annealing the perovskite dielectric layer in an ambient that includes an ambient oxygen partial pressure, such that the oxygen-absorbing layer locally reduces the oxygen partial pressure adjacent the perovskite dielectric layer to below the ambient oxygen partial pressure. Thus, a perovskite dielectric layer can be annealed without the need to provide ultra-high vacuum and/or ultra-high purity ambient environments.
    Type: Grant
    Filed: May 6, 2002
    Date of Patent: August 30, 2005
    Assignee: North Carolina State University
    Inventors: Jon-Paul Maria, Angus Ian Kingon
  • Patent number: 6849292
    Abstract: The present invention concerns the field of solid state capacitors and relates particularly to massed production methods for manufacturing solid state capacitors.
    Type: Grant
    Filed: August 9, 2000
    Date of Patent: February 1, 2005
    Assignee: AVX Limited
    Inventor: David Huntington
  • Patent number: 6787186
    Abstract: A method of forming a metal oxide ceramic layer is provided, in which a gaseous flow of a vaporized solution of a precursor organo metal compound in a volatile organic solvent, e.g., plus an oxidizing gas, in the presence of a protonating additive substance and/or activating agent in gaseous state, is conducted into contact with a surface of a substrate. The operation is effected under vacuum pressure at a thermal decomposition temperature for converting the precursor compound to its corresponding metal oxide, e.g., having the same oxidation state as in the precursor compound. The additive substance is present in an amount sufficient for facilitating thermal decomposition of the precursor compound and for controlling the in situ oxidation state of the deposited metal and the amount of oxygen in the formed layer, e.g., while suppressing formation of volatile intermediates and of vacancies in the formed layer.
    Type: Grant
    Filed: December 14, 1998
    Date of Patent: September 7, 2004
    Assignees: Advanced Technology Materials, Inc., Infineon Technologies Corporation
    Inventor: Frank S. Hintermaier
  • Patent number: 6764712
    Abstract: A method for increasing the surface area of foil electrodes of electrolytic capacitors. A valve metal is deposited by evaporation on a valve metal foil in a low pressure inert atmosphere including oxygen at a pressure one to two orders of magnitude lower than the pressure of the inert gas. The resulting surface is fractal-like. The foil thus treated is suitable as such for use as a cathode. Prior to anodization to produce an anode, a discontinuous layer of a valve metal oxide is deposited on the foil, to preserve the high surface area of the fractal-like surface and otherwise promote the formation of a dielectric coating whose interface with the metal foil has a high surface area.
    Type: Grant
    Filed: December 21, 2000
    Date of Patent: July 20, 2004
    Assignee: Acktar Ltd
    Inventors: Dina Katsir, Iris Tartakovsky, Israel Tartakovsky
  • Patent number: 6740351
    Abstract: For manufacturing a multi-layer structure with repeating layer sequences, a band-shaped carrier material is first partially separated into individual sections of a same size with connections capable of bearing remaining between the individual sections. After continuously applying at least one further material layer on the surface of the carrier material, the individual sections are completely separated by cutting or punching. The multi-layer structure is obtained by stacking the individual sections obtained in this way on top of one another, whereby intermediate layers can also be potentially inserted between two individual sections.
    Type: Grant
    Filed: June 20, 2002
    Date of Patent: May 25, 2004
    Assignee: Epcos AG
    Inventors: Klaus Schoch, Werner Erhardt, Hartmut Michel
  • Patent number: 6696138
    Abstract: A solid electrolytic capacitor comprises a porous valve acting metal having formed thereon a dielectric film and a solid electrolyte formed on the dielectric film. The solid electrolyte occupies from 10 to 95% of the space within a pore of the porous metal.
    Type: Grant
    Filed: November 26, 2002
    Date of Patent: February 24, 2004
    Assignee: Showa Denko K.K.
    Inventors: Atsushi Sakai, Ryuji Monden, Toru Sawaguchi, Katsuhiko Yamazaki, Yuji Furuta, Hideki Ohata
  • Patent number: 6516504
    Abstract: A capacitor having a floating plate-shaped electrode, at least two patterned plate electrodes overlying the floating plate-shaped electrode, and a dielectric layer therebetween. The resulting structure exhibits high two-port insertion loss even at frequencies as high as 10 GHz. Notably, the capacitor exhibits an insertion loss of more than −40 dB over a range from 1 GHz to 10 GHz.
    Type: Grant
    Filed: October 19, 1999
    Date of Patent: February 11, 2003
    Assignee: The Board of Trustees of the University of Arkansas
    Inventor: Leonard W. Schaper
  • Patent number: 6495021
    Abstract: A dendritic sponge which is directionally-grown on a substrate material has a high surface to volume ratio and is suitable for forming anodes for highly efficient capacitors. A dielectric film is formed on the sponge surface by oxidizing the surface. In a preferred embodiment, the dielectric is grown on titanium sponge and is doped with oxides of Ca, Mg, Sr, Be, or Ba to improve the film's dielectric constant or with higher valent cations, such as Cr6+, V5+, Ta5+, Mo6+, Nb5+, W6+, and P5+, to reduce the oxygen vacancy concentration and leakage current of the dielectric film. A capacitor formed from the sponge includes a cathode electrolyte which serves as an electrical conductor and to repair the dielectric film by re-oxidizing the anode surface at areas of local breakdown. Sponges of titanium, tantalum, and aluminum form efficient dielectric films.
    Type: Grant
    Filed: March 16, 2001
    Date of Patent: December 17, 2002
    Assignee: Case Western Reserve University
    Inventors: Gerhard Welsch, Donald McGervey
  • Publication number: 20020090450
    Abstract: A method for fabricating a precious-metal electrode for a storage capacitor includes providing a substrate, applying a catalytically inactive insulation and a catalytically active connection region to the substrate. The catalytically active connection region can be a precious metal material such as a precious metal or an oxide of a precious metal. The catalytically active connection region and the catalytically inactive insulation region are produced, for example, by patterning the connection region or by planarizing the connection region and the insulation region. The next step is depositing selectively the precious metal material on the catalytically active connection region by passing an organometallic compound of a precious metal to the substrate at a temperature from 0° to 120° C.
    Type: Application
    Filed: December 26, 2001
    Publication date: July 11, 2002
    Inventors: Walter Hartner, Frank Hintermaier, Gunther Schindler
  • Patent number: 6410083
    Abstract: A method of doping tantalum and niobium pellets with nitrogen is described wherein the resulting pellets are substantially free of nitride precipitate on their outer surfaces. The method includes the step of heating the pellets to a temperature of from about 600-1400° C. in a nitrogen gas atmosphere and then in a vacuum which causes nitrogen contacting a pellet to diffuse into the inner portion of the pellet instead of forming a precipitate. The resulting pellets have improved DCL stability and reliability in comparison to prior art nitrogen-doped tantalum and niobium pellets.
    Type: Grant
    Filed: February 25, 2000
    Date of Patent: June 25, 2002
    Assignee: Vishay Sprague, Inc.
    Inventor: Yuri L. Pozdeev-Freeman
  • Publication number: 20020076485
    Abstract: A metal compound solution in the atomized state is introduced directly into a film-forming chamber of which the pressure is maintained at about 100 Torr or lower by mean of a two-fluid nozzle to form a complex oxide thin-film. For use in the two-fluid nozzle, gases including an oxidative gas are used. To dissolve the metal compound, a solvent having a boiling point under ordinary pressure of about 100° C. or higher is used.
    Type: Application
    Filed: July 27, 2001
    Publication date: June 20, 2002
    Applicant: Murata Manufacturing Co., Ltd.
    Inventor: Yutaka Takeshima
  • Patent number: 6335049
    Abstract: A chemical vapor deposition method of forming a high k dielectric layer includes positioning a substrate within a chemical vapor deposition reactor. At least one metal comprising precursor and N2O are provided within the reactor under conditions effective to deposit a high k dielectric layer on the substrate comprising oxygen and the metal of the at least one metal precursor. The N2O is present within the reactor during at least a portion of the deposit at greater than or equal to at least 90% concentration by volume as compared with any O2, O3, NO, and NOX injected to within the reactor. In one implementation, the conditions are void of injection of any of O2, O3, NO, and NOX to within the reactor during the portion of the deposit. In one implementation, a capacitor is formed using the above methods. In preferred implementations, the technique can be used to yield smooth, continuous dielectric layers in the absence of haze or isolated island-like nuclei.
    Type: Grant
    Filed: January 3, 2000
    Date of Patent: January 1, 2002
    Assignee: Micron Technology, Inc.
    Inventor: Cem Basceri
  • Patent number: 6287630
    Abstract: The present invention relates to an improved method of impregnating electrolytic capacitor stacks or wound rolls with a polymer electrolyte such as a hydroxyethylmethacrylate (HEMA) or hydroxyethylacrylate (HEA) based polymer electrolyte, to render them suitable for use in electrolytic capacitors, and to such electrolytic capacitors. The initiator to promote the polymerization of this electrolyte is deposited on the foil or in the stack or wound roll prior to impregnation of the polymer electrolyte, allowing the electrolyte to be warmed to a temperature suitable for easy impregnation into the anode and cathode foil and paper.
    Type: Grant
    Filed: May 14, 1999
    Date of Patent: September 11, 2001
    Assignee: Pacesetter, Inc.
    Inventors: Thomas F. Strange, Timothy R. Marshall
  • Patent number: 6246586
    Abstract: In a method wherein, before forming a thin film of, for example, metal on a supporting base in a vacuum, a vapor stream of patterning material for forming a pattern in the thin film is applied from nozzle holes, and the thin film is formed after this liquid has been adhered onto the supporting base, the patterning material is applied from the nozzle holes in such manner that it unifies on the supporting base. Thus, even when the pattern width is enlarged, a pattern can be formed in which the blurring at the pattern edges is small.
    Type: Grant
    Filed: September 10, 1999
    Date of Patent: June 12, 2001
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Kazuyoshi Honda, Noriyasu Echigo, Masaru Odagiri, Nobuki Sunagare
  • Patent number: 6146906
    Abstract: In a method for manufacturing a capacitor including a lower electrode, a ferroelectric layer formed on the lower electrode, and an upper electrode formed on the ferroelectric layer, at least one of the lower and upper electrodes is made of laminated metal and conductive oxide. The laminated metal and conductive oxide are deposited by a DC magnetron reactive sputtering process using one metal target and mixture gas including oxygen wherein a ratio of oxygen in the mixture gas and a substrate temperature are definite and a DC input power is changed depending on the metal and the conductive oxide.
    Type: Grant
    Filed: September 16, 1999
    Date of Patent: November 14, 2000
    Assignee: NEC Corporation
    Inventors: Naoya Inoue, Yoshihiro Hayashi
  • Patent number: 6120846
    Abstract: A method is described for the selective deposition of bismuth based ferroelectric films by selective chemical vapor deposition on a substrate. Selectivity in the deposition process is attained by selection of substrate-precursor combinations which assure high bismuth deposition efficiency in certain areas and low bismuth deposition efficiency in other areas in combination with specific process parameters.
    Type: Grant
    Filed: December 23, 1997
    Date of Patent: September 19, 2000
    Assignees: Advanced Technology Materials, Inc., Infineon Technologies Corporation
    Inventors: Frank Hintermaier, Bryan Hendrix, Jeff Roeder, Peter Van Buskirk, Thomas H. Baum
  • Patent number: 6096391
    Abstract: A method for improving the electrical conductivity of a substrate of metal, metal alloy or metal oxide comprising depositing a small or minor amount of metal or metals from Group VIIIA metals (Fe, Ru, Os, Co, Rh, Ir, Ni, Pd, Pt) or from Group IA metals (Cu, Ag, Au) on a substrate of metal, metal alloys and/or metal oxide from Group IVA metals (Ti, Zr, Hf), Group VA metals (V, Nb, Ta), Group VIA metals (Cr, Mo, W) and Al, Mn, Ni and Cu. The native oxide layer of the substrate is changed from electrically insulating to electrically conductive. The step of depositing is carried out by a low temperature arc vapor deposition process. The deposition may be performed on either treated or untreated substrate. The substrate with native oxide layer made electrically conductive is useable in the manufacture of electrodes for devices such as capacitors and batteries.
    Type: Grant
    Filed: October 16, 1998
    Date of Patent: August 1, 2000
    Assignee: Wilson Greatbatch Ltd.
    Inventors: Barry C. Muffoletto, Ashish Shah
  • Patent number: 6077573
    Abstract: A method of forming a microelectronic device includes the step of forming an impurity doped amorphous silicon layer on a microelectronic substrate using plasma-enhanced chemical vapor deposition. The impurity doped amorphous silicon layer is patterned so that portions of the microelectronic substrate are exposed adjacent the patterned amorphous silicon layer. A hemispherical grained silicon layer is then formed on the patterned amorphous silicon layer. Moreover, the step of forming the impurity doped amorphous silicon layer can be performed at a temperature of C. or less.
    Type: Grant
    Filed: May 22, 1998
    Date of Patent: June 20, 2000
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Young-sun Kim, Sang-hyeop Lee, Seung-hwan Lee, Young-wook Park, Mikio Takagi
  • Patent number: 6063443
    Abstract: The multi-source raw material are dissolved in the tetra-hydrofuran, in a liquid state and evaporated simultaneously and stably transported to the reactor, thereby the dielectric thin film used for capacitor having a good performance is formed with a good repeatability. The present invention provides CVD raw material for oxide-system dielectric thin film wherein organic metal raw material is dissolved in the tetra-hydrofuran and the metal atom of the organic metal raw material is selected at least among Pb, Ti, Zr or alkaline earth metal. As a result, a stable dielectric thin film can be formed by CVD method and the dielectric thin film can be used for a capacitor for memory devices.
    Type: Grant
    Filed: July 2, 1996
    Date of Patent: May 16, 2000
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Fusaoki Uchikawa, Shigeru Matsuno, Shinichi Kinouchi, Hisao Watarai
  • Patent number: 6014310
    Abstract: A composite dielectric material useful in advanced memory applications such as dynamic random access memory (DRAM) cells is provided. The composite dielectric material of the present invention includes a mixed oxide such as TiO.sub.2 or Ta.sub.2 O.sub.5 that is interdiffused into a Si.sub.3 N.sub.4 film. Capacitors including the composite dielectric material of the present invention are also disclosed.
    Type: Grant
    Filed: October 21, 1998
    Date of Patent: January 11, 2000
    Assignee: International Business Machines Corporation
    Inventors: Gary Bela Bronner, Stephan Alan Cohen, David Mark Dobuzinsky, Jeffrey Peter Gambino, Herbert Lei Ho, Karen Popek Madden
  • Patent number: 6010744
    Abstract: A method is described for the nucleation controlled deposition of ferroelectric thin films by chemical vapor deposition in a novel processing sequence wherein a higher density of bismuth nucleation sites is achieved either by the use of a substrate member which has been treated in a manner to yield a controllably and reproducible rough surface on which SBT films with excellent properties may be produced or by using a chemically modified substrate surface upon which surface chemical properties are modified. Typical techniques for achieving surface roughening include reactive ion etching, inert ion milling and chemical mechanical polishing, each of which may be used to delineate patterned bottom electrodes. The chemical properties of the substrate may be modified by alloy deposition, deposition of seed layers which are then partially or completely in-diffused ion implantation with or without heat treatment and changing the chemistry of the surface by a pre-exposure to chemical agents prior to deposition.
    Type: Grant
    Filed: December 23, 1997
    Date of Patent: January 4, 2000
    Assignees: Advanced Technology Materials, Inc., Infineon Technolgies Corporation
    Inventors: Peter Van Buskirk, Jeff Roeder, Frank Hintermaier, Bryan Hendrix, Thomas H. Baum
  • Patent number: 6010743
    Abstract: The invention relates to a process for impregnation of electrical capacitors which consists in performing the impregnation of the coil winding with a dielectric fluid and then eliminating the excess of the said fluid and in filling the casing containing the said impregnated coil winding with a gelable composition including the said dielectric fluid for impregnation of coil winding.
    Type: Grant
    Filed: January 30, 1998
    Date of Patent: January 4, 2000
    Assignee: Elf Atochem S.A.
    Inventor: Noelle Berger
  • Patent number: 5997940
    Abstract: A method for protecting porous components immersed in insulating liquid and subjected to high voltage. The method involves impregnating the components in a heated bath of polymerisable fluid resin wherein the polymerization occurs after the fluid resin penetrates the pores of the porous components.
    Type: Grant
    Filed: September 3, 1997
    Date of Patent: December 7, 1999
    Assignee: Thomson-CSF
    Inventors: Jean-Pierre Delvinquier, Christian Girardet
  • Patent number: 5942283
    Abstract: A metallized film capacitor formed from a pair of metallized films. Each of the metallized films includes a dielectric film with a metal evaporated electrode formed thereon. One electrode has longitudinal electrode partitioning lines and a plurality of small blocks separated by fuse areas, while the other electrode does not. Each metallized film is formed by moving the film over a screen cylinder having a side wall with openings formed therein. A nozzle is disposed inside the screen cylinder, adjacent to the side wall. Oil is ejected from the nozzle, while the screen cylinder is rotated. The oil passes through the side wall and is deposited on the film to form a pattern thereon. Subsequently, evaporated metal is deposited on the film.
    Type: Grant
    Filed: June 15, 1998
    Date of Patent: August 24, 1999
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Shigeo Okuno, Toshiyuki Nishimori, Shigeo Okabe, Masahiro Kawai, Nobuji Suzuki, Hidekazu Wada
  • Patent number: 5939131
    Abstract: A method for forming a microelectronic capacitor includes the steps of forming a first conductive layer on a substrate and forming an oxide reducing layer on the first conductive layer opposite the substrate wherein the oxide reducing layer reduces oxidation of the first conductive layer. An oxide layer is formed on the oxide reducing layer opposite the substrate, and a dielectric layer is formed on the oxide layer opposite the substrate wherein the dielectric layer has a dielectric constant that is higher than a dielectric constant of the oxide reducing layer, and higher than a dielectric constant of the oxide layer. In addition, a second conductive layer is formed on the dielectric layer opposite the substrate. Related structures are also discussed.
    Type: Grant
    Filed: June 13, 1997
    Date of Patent: August 17, 1999
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kyung-hoon Kim, Kab-jin Nam, In-sung Park, Young-wook Park
  • Patent number: 5876788
    Abstract: A method of fabricating a dielectric material useful in advanced memory applications which comprises a metal oxide such as TiO.sub.2 or Ta.sub.2 O.sub.5 interdiffused into a Si.sub.3 N.sub.4 film is provided.
    Type: Grant
    Filed: January 16, 1997
    Date of Patent: March 2, 1999
    Assignee: International Business Machines Corporation
    Inventors: Gary Bela Bronner, Stephan Alan Cohen, David Mark Dobuzinsky, Jeffrey Peter Gambino, Herbert Lei Ho, Karen Popek Madden
  • Patent number: 5876658
    Abstract: An electrode for an electric double layer capacitor in which resin is used as a starting material and the manufacturing cost is low and a method of manufacturing the same are disclosed. A method of manufacturing an electrode for an electric double layer capacitor containing carbonized resin includes heating resin at a temperature equal to or higher than the temperature for finishing endothermic reaction of the resin upon melting (softening to be fluidized) of the resin and equal to or lower than the temperature for starting oxidizing reaction in an atmosphere of a pressure range of 0.
    Type: Grant
    Filed: March 28, 1996
    Date of Patent: March 2, 1999
    Assignee: Isuzu Motors Limited
    Inventor: Toshikazu Takeda
  • Patent number: 5824394
    Abstract: A biaxially oriented laminated polyester film, comprises a layer A having a thickness of 0.5 .mu.m, composed of a polyester having no crystalline melt peak at not less than C. in the differential thermal analysis and laminated on at least one surface of another polyester layer, with a coating layer containing not less than 50 wt % of an acrylic resin or urethane resin as a coating component being formed on the surface of said layer A.
    Type: Grant
    Filed: December 11, 1995
    Date of Patent: October 20, 1998
    Assignee: Diafoil Hoechst Company, Limited
    Inventors: Shinichi Kinoshita, Narihiro Masuda