Abstract: A process for joining together a first polishing pad with a second polishing pad to form a larger pad for a machine that performs chemical-mechanical polishing of silicon wafers. The process includes laying a first polishing pad on a surface and laying a second pad on the surface so that a portion of the second pad overlies a portion of the first pad, creating an overlap region. The first and second pads in the overlap region are cut through to form a first cut edge on the first pad and a second cut edge on the second pad, the first and second cut edges having shapes which are complementary. The first and second cut edges are brought into engagement, and the first pad is joined to the second pad at the first and second cut edges.

Abstract: A method for the densification of an annular body having a porous structure and comprising layers of fabric, which includes locating a susceptor element within the porous body, the amount of the susceptor element occupying less than 5% of the volume of the porous body, the susceptor element being in the form of a layer comprising one of a foil and a fiber and having plural holes therein through which adjacent layers of fabric of the porous body contact each other, said susceptor element being made of a material which is more susceptible to heating by electromagnetic radiation than the material of the porous body, and exposing the porous body to hydrocarbon gas and simultaneously applying an electromagnetic field to the porous body, the susceptor element within the porous body at least in part causing heating of the porous body to a temperature at which the gas infiltrating the porous body deposits carbon within the porous body.